CN113039626B - 边缘环的温度及偏压控制 - Google Patents

边缘环的温度及偏压控制 Download PDF

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Publication number
CN113039626B
CN113039626B CN202080006038.3A CN202080006038A CN113039626B CN 113039626 B CN113039626 B CN 113039626B CN 202080006038 A CN202080006038 A CN 202080006038A CN 113039626 B CN113039626 B CN 113039626B
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ring
substrate support
substrate
bias
base plate
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Chinese (zh)
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CN113039626A (zh
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J·罗杰斯
L·崔
R·丁德萨
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Mechanical Operated Clutches (AREA)
  • Physical Vapour Deposition (AREA)
  • Thermistors And Varistors (AREA)
CN202080006038.3A 2019-02-01 2020-01-07 边缘环的温度及偏压控制 Active CN113039626B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410434006.3A CN118335584A (zh) 2019-02-01 2020-01-07 边缘环的温度及偏压控制

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/265,186 2019-02-01
US16/265,186 US10784089B2 (en) 2019-02-01 2019-02-01 Temperature and bias control of edge ring
PCT/US2020/012503 WO2020159674A1 (en) 2019-02-01 2020-01-07 Temperature and bias control of edge ring

Related Child Applications (1)

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CN202410434006.3A Division CN118335584A (zh) 2019-02-01 2020-01-07 边缘环的温度及偏压控制

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CN113039626A CN113039626A (zh) 2021-06-25
CN113039626B true CN113039626B (zh) 2024-04-26

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CN202410434006.3A Pending CN118335584A (zh) 2019-02-01 2020-01-07 边缘环的温度及偏压控制

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US (4) US10784089B2 (https=)
JP (3) JP7323626B2 (https=)
KR (3) KR102871375B1 (https=)
CN (2) CN113039626B (https=)
TW (2) TW202445645A (https=)
WO (1) WO2020159674A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784089B2 (en) * 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP7743833B2 (ja) 2020-06-29 2025-09-25 住友大阪セメント株式会社 静電チャック
US11781212B2 (en) 2021-04-07 2023-10-10 Applied Material, Inc. Overlap susceptor and preheat ring
JP7719860B2 (ja) * 2021-04-23 2025-08-06 東京エレクトロン株式会社 プラズマ処理装置及び基板処理方法
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
KR20230034452A (ko) * 2021-09-02 2023-03-10 주식회사 템네스트 반도체 웨이퍼 제조 장치 및 그 내식성 향상 방법
KR102896325B1 (ko) 2021-11-09 2025-12-08 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
CN120642034A (zh) * 2023-02-14 2025-09-12 东京毅力科创株式会社 等离子体处理装置
CN121533183A (zh) * 2023-06-27 2026-02-13 东京毅力科创株式会社 等离子体处理装置的清洁方法和等离子体处理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010019196A2 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
CN106356274A (zh) * 2015-07-13 2017-01-25 朗姆研究公司 通过等离子体操作调节极端边缘鞘和晶片轮廓
CN106997842A (zh) * 2016-01-22 2017-08-01 应用材料公司 控制电容耦合等离子体工艺设备的边缘环的射频振幅
CN107527785A (zh) * 2016-06-22 2017-12-29 朗姆研究公司 通过使用耦合环内的电极来控制边缘区域中的离子的方向性的系统和方法
CN108206148A (zh) * 2016-12-16 2018-06-26 应用材料公司 用于边缘均匀性控制的可调整的延伸电极
CN108369922A (zh) * 2016-01-26 2018-08-03 应用材料公司 晶片边缘环升降解决方案
JP2018186263A (ja) * 2017-04-26 2018-11-22 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4388455B2 (ja) 1996-03-01 2009-12-24 株式会社日立製作所 プラズマエッチング処理装置
US6039836A (en) 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6232236B1 (en) 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US7758764B2 (en) 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US20140069584A1 (en) 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
KR101559913B1 (ko) 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
JP5496568B2 (ja) 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012104382A (ja) 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
JP6024921B2 (ja) 2013-11-01 2016-11-16 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US10832931B2 (en) 2014-05-30 2020-11-10 Applied Materials, Inc. Electrostatic chuck with embossed top plate and cooling channels
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10017857B2 (en) * 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US10854492B2 (en) 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
US9601319B1 (en) 2016-01-07 2017-03-21 Lam Research Corporation Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
US10109464B2 (en) * 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
JP2018006299A (ja) * 2016-07-08 2018-01-11 東芝メモリ株式会社 プラズマ処理装置用処理対象支持台、プラズマ処理装置及びプラズマ処理方法
US20190122870A1 (en) * 2016-07-14 2019-04-25 Tokyo Electron Limited Focus ring replacement method and plasma processing system
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
JP6826955B2 (ja) 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
JP6974088B2 (ja) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101980203B1 (ko) * 2017-10-30 2019-05-21 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
KR20190055607A (ko) * 2017-11-15 2019-05-23 삼성전자주식회사 플라즈마 처리 장치
EP3711080B1 (en) * 2017-11-17 2023-06-21 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
JP7033441B2 (ja) 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7033907B2 (ja) * 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP7149068B2 (ja) * 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN109994355B (zh) * 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
JP6995008B2 (ja) 2018-04-27 2022-01-14 東京エレクトロン株式会社 基板処理装置
US10784089B2 (en) * 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010019196A2 (en) * 2008-08-15 2010-02-18 Lam Research Corporation Temperature controlled hot edge ring assembly
CN106356274A (zh) * 2015-07-13 2017-01-25 朗姆研究公司 通过等离子体操作调节极端边缘鞘和晶片轮廓
CN106997842A (zh) * 2016-01-22 2017-08-01 应用材料公司 控制电容耦合等离子体工艺设备的边缘环的射频振幅
CN206758401U (zh) * 2016-01-22 2017-12-15 应用材料公司 控制电容耦合等离子体工艺设备的边缘环的射频振幅
CN108369922A (zh) * 2016-01-26 2018-08-03 应用材料公司 晶片边缘环升降解决方案
CN107527785A (zh) * 2016-06-22 2017-12-29 朗姆研究公司 通过使用耦合环内的电极来控制边缘区域中的离子的方向性的系统和方法
CN108206148A (zh) * 2016-12-16 2018-06-26 应用材料公司 用于边缘均匀性控制的可调整的延伸电极
JP2018186263A (ja) * 2017-04-26 2018-11-22 東京エレクトロン株式会社 プラズマ処理装置

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JP2023109801A (ja) 2023-08-08
TWI851651B (zh) 2024-08-11
US20230360892A1 (en) 2023-11-09
CN113039626A (zh) 2021-06-25
CN118335584A (zh) 2024-07-12
KR20210087547A (ko) 2021-07-12
US10784089B2 (en) 2020-09-22
TW202044319A (zh) 2020-12-01
JP7630563B2 (ja) 2025-02-17
US20210313156A1 (en) 2021-10-07
KR20230066664A (ko) 2023-05-16
KR102616707B1 (ko) 2023-12-20
US12580162B2 (en) 2026-03-17
JP2023159093A (ja) 2023-10-31
KR102871375B1 (ko) 2025-10-14
WO2020159674A1 (en) 2020-08-06
US20200402776A1 (en) 2020-12-24
JP2022523069A (ja) 2022-04-21
JP7323626B2 (ja) 2023-08-08
KR102781328B1 (ko) 2025-03-12
US11232933B2 (en) 2022-01-25
JP7516611B2 (ja) 2024-07-16
KR20240005210A (ko) 2024-01-11
US11810768B2 (en) 2023-11-07
TW202445645A (zh) 2024-11-16
US20200251313A1 (en) 2020-08-06

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