CN113039605A - 存储器和存取方法 - Google Patents

存储器和存取方法 Download PDF

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Publication number
CN113039605A
CN113039605A CN201980076064.0A CN201980076064A CN113039605A CN 113039605 A CN113039605 A CN 113039605A CN 201980076064 A CN201980076064 A CN 201980076064A CN 113039605 A CN113039605 A CN 113039605A
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CN
China
Prior art keywords
magnetic memory
voltage
layer
memory cell
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980076064.0A
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English (en)
Inventor
许俊豪
杨欢
张日清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN113039605A publication Critical patent/CN113039605A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

本申请提供了一种磁电阻随机存取存储器，能够节约芯片面积。该磁电阻随机存取存储器包括：多个堆叠的叠加层，每个叠加层包括呈二维排布的多个磁记忆体单元；多个选择金属层，每个叠加层设置于两个选择金属层之间且与所述两个选择金属层相邻，每个选择金属层与相邻的叠加层中的磁记忆体单元相连，并用于对所述磁记忆体单元进行读写操作。

Description

PCT国内申请，说明书已公开。

Claims (22)

  1. PCT国内申请，权利要求书已公开。
CN201980076064.0A 2019-02-28 2019-02-28 存储器和存取方法 Pending CN113039605A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/076591 WO2020172891A1 (zh) 2019-02-28 2019-02-28 存储器和存取方法

Publications (1)

Publication Number Publication Date
CN113039605A true CN113039605A (zh) 2021-06-25

Family

ID=72238760

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980076064.0A Pending CN113039605A (zh) 2019-02-28 2019-02-28 存储器和存取方法

Country Status (4)

Country Link
US (1) US20210390994A1 (zh)
EP (1) EP3923288A4 (zh)
CN (1) CN113039605A (zh)
WO (1) WO2020172891A1 (zh)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
SE531384C2 (sv) * 2006-02-10 2009-03-17 Vnk Innovation Ab Multipla magnetoresistansanordningar baserade på metalldopad magnesiumoxid
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US7888756B2 (en) * 2007-03-22 2011-02-15 Everspin Technologies, Inc. MRAM tunnel barrier structure and methods
CN102314927B (zh) * 2010-07-06 2014-02-05 中国科学院物理研究所 一种磁性随机存储单元阵列、存储器及其读写方法
US8730719B1 (en) * 2010-12-03 2014-05-20 Iii Holdings 1, Llc MRAM with metal gate write conductors
CN102487124B (zh) * 2011-09-19 2014-07-23 中国科学院物理研究所 纳米多层膜、场效应管、传感器、随机存储器及制备方法
US9853053B2 (en) * 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
TWI569484B (zh) * 2014-01-24 2017-02-01 國立臺灣大學 具超晶格勢壘之磁穿隧接面及包含具超晶格勢壘磁穿隧接面之裝置
KR102235043B1 (ko) * 2014-06-09 2021-04-05 삼성전자주식회사 반도체 메모리 장치
US9978931B2 (en) * 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US10134808B2 (en) * 2015-11-02 2018-11-20 Qualcomm Incorporated Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
KR102437781B1 (ko) * 2015-12-10 2022-08-30 삼성전자주식회사 자기 메모리 장치 및 그 제조 방법
US10134457B1 (en) * 2017-08-31 2018-11-20 Sandisk Technologies Llc Cross-point spin accumulation torque MRAM
US10585630B2 (en) * 2017-09-11 2020-03-10 Samsung Electronics Co., Ltd. Selectorless 3D stackable memory
CN107910439B (zh) * 2017-11-07 2019-12-06 北京航空航天大学 拓扑绝缘磁电阻器件
US10381406B1 (en) * 2018-02-17 2019-08-13 GlobalFoundries, Inc. Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same

Also Published As

Publication number Publication date
WO2020172891A1 (zh) 2020-09-03
EP3923288A1 (en) 2021-12-15
US20210390994A1 (en) 2021-12-16
EP3923288A4 (en) 2022-08-10

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