CN113039605A - 存储器和存取方法 - Google Patents
存储器和存取方法 Download PDFInfo
- Publication number
- CN113039605A CN113039605A CN201980076064.0A CN201980076064A CN113039605A CN 113039605 A CN113039605 A CN 113039605A CN 201980076064 A CN201980076064 A CN 201980076064A CN 113039605 A CN113039605 A CN 113039605A
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- CN
- China
- Prior art keywords
- magnetic memory
- voltage
- layer
- memory cell
- magnetic
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- 230000005291 magnetic effect Effects 0.000 claims abstract description 383
- 229910052751 metal Inorganic materials 0.000 claims abstract description 183
- 239000002184 metal Substances 0.000 claims abstract description 183
- 230000005294 ferromagnetic effect Effects 0.000 claims description 155
- 230000004888 barrier function Effects 0.000 claims description 108
- 239000000463 material Substances 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 13
- 239000000395 magnesium oxide Substances 0.000 claims description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 13
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 28
- 230000009977 dual effect Effects 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 6
- 238000007667 floating Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
本申请提供了一种磁电阻随机存取存储器，能够节约芯片面积。该磁电阻随机存取存储器包括：多个堆叠的叠加层，每个叠加层包括呈二维排布的多个磁记忆体单元；多个选择金属层，每个叠加层设置于两个选择金属层之间且与所述两个选择金属层相邻，每个选择金属层与相邻的叠加层中的磁记忆体单元相连，并用于对所述磁记忆体单元进行读写操作。
Description
PCT国内申请，说明书已公开。
Claims (22)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/076591 WO2020172891A1 (zh) | 2019-02-28 | 2019-02-28 | 存储器和存取方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113039605A true CN113039605A (zh) | 2021-06-25 |
Family
ID=72238760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980076064.0A Pending CN113039605A (zh) | 2019-02-28 | 2019-02-28 | 存储器和存取方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20210390994A1 (zh) |
| EP (1) | EP3923288A4 (zh) |
| CN (1) | CN113039605A (zh) |
| WO (1) | WO2020172891A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230240149A1 (en) * | 2022-01-25 | 2023-07-27 | Eagle Technology, Llc | Multi-level multiferroic memory device and related methods |
| US20230240080A1 (en) * | 2022-01-25 | 2023-07-27 | Eagle Technology, Llc | Multiferroic memory with piezoelectric layers and related methods |
| US20230240152A1 (en) * | 2022-01-25 | 2023-07-27 | Eagle Technology , LLC | Multiferroic tunnel junction memory device and related methods |
| TWI838989B (zh) * | 2022-11-30 | 2024-04-11 | 財團法人工業技術研究院 | 磁性隨機存取記憶體結構 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6611453B2 (en) * | 2001-01-24 | 2003-08-26 | Infineon Technologies Ag | Self-aligned cross-point MRAM device with aluminum metallization layers |
| SE531384C2 (sv) * | 2006-02-10 | 2009-03-17 | Vnk Innovation Ab | Multipla magnetoresistansanordningar baserade på metalldopad magnesiumoxid |
| US8508984B2 (en) * | 2006-02-25 | 2013-08-13 | Avalanche Technology, Inc. | Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof |
| US7888756B2 (en) * | 2007-03-22 | 2011-02-15 | Everspin Technologies, Inc. | MRAM tunnel barrier structure and methods |
| CN102314927B (zh) * | 2010-07-06 | 2014-02-05 | 中国科学院物理研究所 | 一种磁性随机存储单元阵列、存储器及其读写方法 |
| US8730719B1 (en) * | 2010-12-03 | 2014-05-20 | Iii Holdings 1, Llc | MRAM with metal gate write conductors |
| CN102487124B (zh) * | 2011-09-19 | 2014-07-23 | 中国科学院物理研究所 | 纳米多层膜、场效应管、传感器、随机存储器及制备方法 |
| US9853053B2 (en) * | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
| TWI569484B (zh) * | 2014-01-24 | 2017-02-01 | 國立臺灣大學 | 具超晶格勢壘之磁穿隧接面及包含具超晶格勢壘磁穿隧接面之裝置 |
| KR102235043B1 (ko) * | 2014-06-09 | 2021-04-05 | 삼성전자주식회사 | 반도체 메모리 장치 |
| US9978931B2 (en) * | 2015-02-13 | 2018-05-22 | Inston Inc. | Systems and methods for implementing robust magnetoelectric junctions |
| US10134808B2 (en) * | 2015-11-02 | 2018-11-20 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) |
| KR102437781B1 (ko) * | 2015-12-10 | 2022-08-30 | 삼성전자주식회사 | 자기 메모리 장치 및 그 제조 방법 |
| US10475564B2 (en) * | 2016-06-29 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation |
| US10134457B1 (en) * | 2017-08-31 | 2018-11-20 | Sandisk Technologies Llc | Cross-point spin accumulation torque MRAM |
| US10585630B2 (en) * | 2017-09-11 | 2020-03-10 | Samsung Electronics Co., Ltd. | Selectorless 3D stackable memory |
| CN107910439B (zh) * | 2017-11-07 | 2019-12-06 | 北京航空航天大学 | 拓扑绝缘磁电阻器件 |
| US10381406B1 (en) * | 2018-02-17 | 2019-08-13 | GlobalFoundries, Inc. | Integrated circuits including magnetic random access memory structures having reduced switching energy barriers for dual bit operation and methods for fabricating the same |
-
2019
- 2019-02-28 WO PCT/CN2019/076591 patent/WO2020172891A1/zh unknown
- 2019-02-28 CN CN201980076064.0A patent/CN113039605A/zh active Pending
- 2019-02-28 EP EP19916906.1A patent/EP3923288A4/en active Pending
-
2021
- 2021-08-26 US US17/412,904 patent/US20210390994A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20210390994A1 (en) | 2021-12-16 |
| WO2020172891A1 (zh) | 2020-09-03 |
| EP3923288A1 (en) | 2021-12-15 |
| EP3923288A4 (en) | 2022-08-10 |
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