CN113036017A - 倒装发光元件 - Google Patents

倒装发光元件 Download PDF

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CN113036017A
CN113036017A CN202110291462.3A CN202110291462A CN113036017A CN 113036017 A CN113036017 A CN 113036017A CN 202110291462 A CN202110291462 A CN 202110291462A CN 113036017 A CN113036017 A CN 113036017A
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CN113036017B (zh
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熊伟平
王鑫
吴志伟
高迪
吴俊毅
王笃祥
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Tianjin Sanan Optoelectronics Co Ltd
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Abstract

本发明公开一种倒装发光元件，其结构自下而上包含：透明衬底、透明键合层、外延层、绝缘保护层、第一焊接电极、第二焊接电极，所述外延层包含p型导电层、量子阱、n型导电层，其中p型导电层与透明键合层相接，接触面为粗化面，所述外延层边缘被蚀刻，直至透明键合层也被蚀刻减薄形成台阶，减薄后的透明键合层表面至少低于所述粗化面的最低点，n型导电层、量子阱的部分区域被蚀刻，直至露出p型导电层，所述绝缘保护层覆盖上述结构，第一焊接电极、第二焊接电极通过绝缘保护层通孔分别与p型导电层、n型导电层接触。本发明提高倒装发光元件的可靠性。

Description

倒装发光元件
本申请是申请人“天津三安光电有限公司”于申请日2019年8月29日提交的申请号为201910809304.5，发明名称为“倒装发光元件”的发明专利的分案申请。
技术领域
本发明涉及一种倒装发光元件，属于半导体光电子器件与技术领域。
背景技术
倒装发光元件外延结构通过透明键合层与透明衬底键合，通常为提高出光效率，其与透明键合层接触的一面为粗化面，因此透明键合层沉积在所述的粗化面后，界面处将产生大量空洞，如附图1所示，由此带来的问题：一方面，界面处形成的空洞将成为水汽、金属离子侵入的通道，导致芯片老化失效；另一方面，即使覆盖绝缘保护层后，由于芯片边缘蚀刻外延后裸露的透明键合层表面同样为粗化面，绝缘保护层与透明键合层之间同样会产生空洞，同时绝缘保护层本身将可能产生裂缝，这将导致绝缘保护层的保护功能失效。实践生产中，我们发现芯片工艺中的溶液、水汽可能通过上述的界面空洞侵入，导致外延层脱落；而在可靠性测试中，水汽、固晶焊料中的金属离子的侵入则导致芯片漏电失效。
发明内容
针对上述问题，本发明提供一种倒装发光元件，其结构自下而上包含：透明衬底、透明键合层以及外延层、绝缘保护层，所述外延层包括发光层，其中透明键合层表面具有与外延层相面对的粗糙表面，外延层的外围被蚀刻露出一定水平宽度的透明键合层，其表面为第一粗化面，外延层与透明衬底之间透明键合层表面为第二粗化面，绝缘保护层覆盖外延层的表面和侧壁并覆盖至少部分第一粗化面，第一粗化面位置处的透明键合层的厚度及表面粗糙度不同于第二粗化面透明键合层的厚度及表面粗糙度。
同时，本发明提供如下一种倒装发光元件的制作方法，提供倒装发光元件的外延结构；在所述倒装发光元件外延结构表面进行粗化处理；在所述粗化处理后的外延结构表面沉积透明键合层并抛光；将上述处理过后的倒装外延结构键合转移至透明衬底；去除外围一定水平宽度外延层以露出部分透明键合层，对露出的透明键合层减薄处理，形成第一粗化面；形成绝缘保护层覆盖外延层的表面和侧壁并覆盖至少部分第一粗化面。
所述透明键合层在第一粗化面具有第一粗糙度，第二粗化面具有第二粗糙度，第一粗糙度低于第二粗糙度。
所述的发光元件包括第一焊接电极、第二焊接电极，外延层包括p型半导体层、n型导电层，第一焊接电极、第二焊接电极通过绝缘保护层通孔分别与p型导电层、n型导电层接触。
所述透明键合层厚度为1-5微米，所述1-5微米的厚度为第二粗化面的位置处的透明键合层的厚度。
第一台面水平宽度为10-20微米。
所述的第一粗糙度不超过50纳米。
所述的第二粗糙度为大于等于100纳米。
所述的透明键合层为绝缘介质层。
第一粗化面位置处的透明键合层的厚度小于第二粗化面位置处的透明键合层的厚度，其差值大于等于200纳米，更有选的，所述的第一粗化面位置处的透明键合层的厚度与第二粗化面位置处的透明键合层的厚度之间的差值大于第二粗糙度。
所述的倒装发光元件为红光或红外光。
所述的粗化面为随机粗化。
本发明的优点在于，在蚀刻芯片边缘外延层形成切割道边缘后，继续蚀刻切割边缘裸露的透明键合层使表面相对平坦，并且确保蚀刻后的透明键合层表面低于透明键合层与外延层的粗化界面，一方面，切割道内的透明键合层被蚀刻，形成相对的台阶，台阶侧壁为光滑平面，绝缘保护层在台阶侧壁形成良好覆盖而不产生空洞，防止湿气进入外延层与透明键合层之间的界面；另一方面，具有粗化面的透明键合层在被蚀刻后，表面粗糙度将降低而趋于平整，绝缘保护层覆盖后界面空洞将大幅减少，同时也有利于绝缘保护层自身的致密性。因此，本发明在芯片边缘形成一圈界面致密无空洞的保护圈，提高了芯片的可靠性。
附图说明
图1示意了现有结构的倒装发光元件。
图2-8示意了实施例一所述的方法步骤(1)~(7)的方法步骤。
图9示意了本发明提出的倒装发光元件。
图中：000：外延生长衬底；001：透明衬底；002：透明键合层；003：p型导电层；004：量子阱；005：n型导电层；006：绝缘保护层；007：第二焊接电极；008：第一焊接电极；009：第二粗化面；010：第一粗化面。
具体实施方式
下面结合实施例对本发明作进一步描述，但不应以此限制本发明的保护范围。
实施例一：
下面结合制作方法说明本发明的结构，
（1）如图2所示，提供一倒装发光元件外延结构，其包括：外延生长衬底000、p型导电层003、量子阱004和n型导电层005；
（2）如图3所示，通过粗化处理制程，在p型导电层003表面形成粗化面，该表面的粗糙度为300纳米；
（3）如图4所示，在上述粗化后的p型导电层003表面沉积透明键合层002，抛光透明键合层002的表面；
（4）如图5所示，外延层（包含p型导电层003、量子阱004、n型导电层005）与透明衬底001通过透明键合层002键合在一起，本实施例中，透明衬底001为蓝宝石，其厚度为90微米，透明键合层002为二氧化硅，其厚度T1为3微米，透明键合层002具有与P型导电层003接触的表面，该表面的粗糙度为300纳米；
（5）如图6所示，定义外延层表面形成光刻胶图形，在n型导电层005表面部分区域去除n型导电层005、量子阱004，直至露出部分p型导电层003；
（6）如图7所示，定义外延层表面形成光刻胶图形，露出芯片边缘的外延层被去除，形成切割道，而后继续去除露出的透明键合层002，即形成第一粗化面010区域，本实施例中，第一粗化面010区域的透明键合层002被蚀刻减薄后的厚度T2为2微米，其表面最高点低于第二粗化面009的最低点；
（7）如图8所示，沉积绝缘保护层006；
（8）如图9所示，分别在位于p型导电层003及n型导电层005上的绝缘保护层006的局部区域形成通孔，制备第一焊接电极008、第二焊接电极007，其通过上述绝缘保护层006的通孔分别与p型导电层003、n型导电层005形成电连接。所述绝缘保护层006完全覆盖外延层的表面、外延层侧壁、第一粗化面010区域的透明键合层002、以及透明键合层002被蚀刻后形成的台阶侧壁，由于该台阶侧壁为光滑平面，绝缘保护层006在该台阶侧壁表面良好覆盖，而被蚀刻后的透明键合层002表面的粗糙度大为降低，绝缘保护层006与其界面处的空洞将大幅减少，因此，由于第一粗化面010与第二粗化面009相互错开，中间以覆盖良好的垂直光滑侧壁隔断，以上结构形成了环绕芯片边缘的保护圈，提高芯片可靠性。
如以上所作的说明，根据参照附图的实施例，对本发明进行了具体说明，但所述实施例只是列举本发明的优选示例进行说明，因而不得理解为本发明只局限于所述实施例，本发明应理解为本发明的技术方案及其等价概念。

Claims (14)

1.发光元件，其结构自下而上包含：透明衬底、透明键合层、外延层以及绝缘保护层；
所述外延层包括发光层；
透明键合层具有第一粗化面和第二粗化面，第一粗化面和第二粗化面形成不同高度的台阶，并且第一粗化面和第二粗化面之间有台阶侧壁，所述透明键合层的第二粗化面位于外延层与衬底之间；
绝缘保护层覆盖外延层的表面和侧壁，并覆盖透明键合层的所述台阶侧壁和至少部分第一粗化面；
所述发光元件为红光或红外光。
2.根据权利要求1所述的发光元件，其特征在于：第一粗化面位置处的透明键合层的厚度小于第二粗化面位置处的透明键合层的厚度。
3.根据权利要求1所述的发光元件，其特征在于：所述透明键合层的第一粗化面具有第一粗糙度，第二粗化面具有第二粗糙度，第一粗糙度不同于第二粗糙度。
4.根据权利要求1所述的发光元件，其特征在于：所述的发光元件包括第一焊接电极、第二焊接电极，外延层包括p型半导体层、n型导电层，第一焊接电极、第二焊接电极通过绝缘保护层通孔分别与p型导电层、n型导电层接触。
5.根据权利要求1所述的发光元件，其特征在于：所述透明键合层厚度为1-5微米。
6.根据权利要求1所述的发光元件，其特征在于：第一粗化面的水平宽度为10-20微米。
7.根据权利要求1所述的发光元件，其特征在于：所述的第一粗糙度不超过50纳米。
8.根据权利要求1所述的发光元件，其特征在于：所述的第二粗糙度为大于100纳米。
9.根据权利要求1所述的发光元件，其特征在于：所述的透明键合层为绝缘介质层。
10.根据权利要求1所述的发光元件，其特征在于：第一粗化面位置处的透明键合层的厚度小于第二粗化面位置处的透明键合层的厚度，其差值大于200纳米。
11.根据权利要求1所述的发光元件，其特征在于：所述外延层的下表面与透明键合层的第二粗化面接触。
12.根据权利要求11所述的发光元件，其特征在于：所述外延层的下表面为粗化面。
13.根据权利要求3所述的发光元件，其特征在于：所述第一粗糙度低于所述第二粗糙度。
14.根据权利要求1所述的发光元件，其特征在于：所述的发光元件为倒装发光元件。
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