CN113016066A - 保护膜形成用复合片及半导体芯片的制造方法 - Google Patents

保护膜形成用复合片及半导体芯片的制造方法 Download PDF

Info

Publication number
CN113016066A
CN113016066A CN201980075529.0A CN201980075529A CN113016066A CN 113016066 A CN113016066 A CN 113016066A CN 201980075529 A CN201980075529 A CN 201980075529A CN 113016066 A CN113016066 A CN 113016066A
Authority
CN
China
Prior art keywords
protective film
forming
film
composite sheet
antistatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980075529.0A
Other languages
English (en)
Chinese (zh)
Inventor
野岛一马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of CN113016066A publication Critical patent/CN113016066A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Physical Vapour Deposition (AREA)
  • Adhesive Tapes (AREA)
  • Laminated Bodies (AREA)
CN201980075529.0A 2018-12-05 2019-11-27 保护膜形成用复合片及半导体芯片的制造方法 Pending CN113016066A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018228528 2018-12-05
JP2018-228528 2018-12-05
PCT/JP2019/046381 WO2020116282A1 (ja) 2018-12-05 2019-11-27 保護膜形成用複合シート、及び半導体チップの製造方法

Publications (1)

Publication Number Publication Date
CN113016066A true CN113016066A (zh) 2021-06-22

Family

ID=70975070

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980075529.0A Pending CN113016066A (zh) 2018-12-05 2019-11-27 保护膜形成用复合片及半导体芯片的制造方法

Country Status (4)

Country Link
KR (1) KR20210100085A (ko)
CN (1) CN113016066A (ko)
TW (1) TWI822917B (ko)
WO (1) WO2020116282A1 (ko)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10217379A (ja) * 1997-02-03 1998-08-18 Toyobo Co Ltd 導電性積層フィルム
JP2008280520A (ja) * 2007-04-11 2008-11-20 Furukawa Electric Co Ltd:The 半導体固定用粘着テープ
JP5865044B2 (ja) * 2011-12-07 2016-02-17 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP6297786B2 (ja) 2012-12-10 2018-03-20 日東電工株式会社 接着シート、ダイシングテープ一体型接着シート、半導体装置の製造方法、及び、半導体装置
JP2016096239A (ja) * 2014-11-14 2016-05-26 住友ベークライト株式会社 半導体用ウエハ加工用粘着テープ
JP6477284B2 (ja) * 2015-06-19 2019-03-06 住友ベークライト株式会社 半導体用ウエハ加工用粘着テープ
JP6506118B2 (ja) * 2015-06-25 2019-04-24 リンテック株式会社 保護膜形成用フィルム、保護膜形成用シート、ワーク又は加工物の製造方法、検査方法、良品と判断されたワーク、及び良品と判断された加工物
JP6697876B2 (ja) * 2015-12-28 2020-05-27 日東電工株式会社 透明導電性フィルム用保護フィルム及び積層体
CN108884244B (zh) * 2016-04-28 2022-01-11 琳得科株式会社 保护膜形成用膜及保护膜形成用复合片

Also Published As

Publication number Publication date
KR20210100085A (ko) 2021-08-13
WO2020116282A1 (ja) 2020-06-11
JPWO2020116282A1 (ja) 2021-10-21
TWI822917B (zh) 2023-11-21
TW202039734A (zh) 2020-11-01

Similar Documents

Publication Publication Date Title
TW201938725A (zh) 保護膜形成用複合片及附有保護膜的半導體晶片的製造方法
JPWO2019182001A1 (ja) フィルム状接着剤及び半導体加工用シート
CN110831766B (zh) 树脂膜形成用膜及树脂膜形成用复合片
CN111849377B (zh) 保护膜形成用复合片
CN113169124A (zh) 保护膜形成用复合片及半导体芯片的制造方法
TW202025264A (zh) 保護膜形成用膜、保護膜形成用複合片、檢查方法以及辨識方法
CN112447577A (zh) 支撑片、保护膜形成用膜、保护膜形成用复合片、及带保护膜的工件加工物的制造方法
TWI837233B (zh) 保護膜形成用複合片、以及半導體晶片之製造方法
CN113016066A (zh) 保护膜形成用复合片及半导体芯片的制造方法
JP7495355B2 (ja) 保護膜形成用複合シート、及び半導体チップの製造方法
TWI835938B (zh) 保護膜形成用複合片、以及半導體晶片之製造方法
JP7292308B2 (ja) 保護膜形成用複合シート、及び半導体チップの製造方法
CN113169126A (zh) 保护膜形成用复合片及半导体芯片的制造方法
JP7497297B2 (ja) 保護膜形成用複合シート、及び半導体チップの製造方法
TWI826601B (zh) 保護膜形成用複合片、以及半導體晶片之製造方法
CN113261091A (zh) 保护膜形成用复合片及半导体芯片的制造方法
CN112447573A (zh) 保护膜形成用复合片
CN115109370A (zh) 保护膜形成膜、保护膜形成用复合片、带保护膜的工件加工物与带保护膜的工件的制造方法
CN112868095A (zh) 热固性树脂膜及第一保护膜形成用片
CN113493661A (zh) 膜状粘合剂及切割固晶片
CN113444271A (zh) 保护膜形成膜、保护膜形成用复合片、及带保护膜形成膜的工件的运送方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination