CN113005509A - 单晶硅锭的制造方法 - Google Patents

单晶硅锭的制造方法 Download PDF

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Publication number
CN113005509A
CN113005509A CN202011111507.6A CN202011111507A CN113005509A CN 113005509 A CN113005509 A CN 113005509A CN 202011111507 A CN202011111507 A CN 202011111507A CN 113005509 A CN113005509 A CN 113005509A
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CN
China
Prior art keywords
silicon
single crystal
magnetic field
ingot
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011111507.6A
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English (en)
Chinese (zh)
Inventor
琴浦荣一郎
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Sumco Corp
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Sumco Corp
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Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN113005509A publication Critical patent/CN113005509A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202011111507.6A 2019-12-20 2020-10-16 单晶硅锭的制造方法 Pending CN113005509A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019230418A JP7184029B2 (ja) 2019-12-20 2019-12-20 単結晶シリコンインゴットの製造方法
JP2019-230418 2019-12-20

Publications (1)

Publication Number Publication Date
CN113005509A true CN113005509A (zh) 2021-06-22

Family

ID=76383615

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011111507.6A Pending CN113005509A (zh) 2019-12-20 2020-10-16 单晶硅锭的制造方法

Country Status (2)

Country Link
JP (1) JP7184029B2 (ja)
CN (1) CN113005509A (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851283A (en) * 1995-12-29 1998-12-22 Shin-Etsu Handotai Co. Ltd. Method and apparatus for production of single crystal
WO2000052235A1 (fr) * 1999-02-26 2000-09-08 Shin-Etsu Handotai Co., Ltd. Procede de production d'un monocristal de silicium
JP2007197300A (ja) * 2005-12-27 2007-08-09 Sumco Corp シリコン単結晶引上方法
JP2010280531A (ja) * 2009-06-04 2010-12-16 Sumco Corp シリコン単結晶の育成方法及びシリコン半導体基板の製造方法
JP2013151385A (ja) * 2012-01-25 2013-08-08 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851283A (en) * 1995-12-29 1998-12-22 Shin-Etsu Handotai Co. Ltd. Method and apparatus for production of single crystal
WO2000052235A1 (fr) * 1999-02-26 2000-09-08 Shin-Etsu Handotai Co., Ltd. Procede de production d'un monocristal de silicium
JP2007197300A (ja) * 2005-12-27 2007-08-09 Sumco Corp シリコン単結晶引上方法
JP2010280531A (ja) * 2009-06-04 2010-12-16 Sumco Corp シリコン単結晶の育成方法及びシリコン半導体基板の製造方法
JP2013151385A (ja) * 2012-01-25 2013-08-08 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
王季陶等主编: "《半导体材料》", 高等教育出版社, pages: 179 *

Also Published As

Publication number Publication date
JP7184029B2 (ja) 2022-12-06
JP2021098622A (ja) 2021-07-01

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