CN112997297B - 半导体装置、电力变换装置以及半导体装置的制造方法 - Google Patents

半导体装置、电力变换装置以及半导体装置的制造方法 Download PDF

Info

Publication number
CN112997297B
CN112997297B CN201980067408.1A CN201980067408A CN112997297B CN 112997297 B CN112997297 B CN 112997297B CN 201980067408 A CN201980067408 A CN 201980067408A CN 112997297 B CN112997297 B CN 112997297B
Authority
CN
China
Prior art keywords
semiconductor device
semiconductor element
heat
frame
frame member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980067408.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN112997297A (zh
Inventor
藤野纯司
小川翔平
松井智香
宫本昇
大岛功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN112997297A publication Critical patent/CN112997297A/zh
Application granted granted Critical
Publication of CN112997297B publication Critical patent/CN112997297B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN201980067408.1A 2018-11-21 2019-11-15 半导体装置、电力变换装置以及半导体装置的制造方法 Active CN112997297B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018218352 2018-11-21
JP2018-218352 2018-11-21
PCT/JP2019/044875 WO2020105556A1 (fr) 2018-11-21 2019-11-15 Dispositif à semi-conducteur, dispositif de conversion de puissance et procédé de fabrication de dispositif à semi-conducteur

Publications (2)

Publication Number Publication Date
CN112997297A CN112997297A (zh) 2021-06-18
CN112997297B true CN112997297B (zh) 2024-04-02

Family

ID=70773626

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980067408.1A Active CN112997297B (zh) 2018-11-21 2019-11-15 半导体装置、电力变换装置以及半导体装置的制造方法

Country Status (3)

Country Link
JP (1) JP7026823B2 (fr)
CN (1) CN112997297B (fr)
WO (1) WO2020105556A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7318238B2 (ja) * 2019-03-11 2023-08-01 富士電機株式会社 半導体装置
US20230282530A1 (en) * 2020-07-14 2023-09-07 Mitsubishi Electric Corporation Semiconductor device and power conversion device
JP2023064653A (ja) * 2021-10-26 2023-05-11 日立Astemo株式会社 半導体モジュール

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101599484A (zh) * 2008-06-05 2009-12-09 三菱电机株式会社 树脂密封型半导体装置及其制造方法
JP2011029589A (ja) * 2009-06-30 2011-02-10 Denso Corp 半導体装置およびその製造方法
CN102986026A (zh) * 2010-06-30 2013-03-20 日立汽车系统株式会社 功率模块和使用它的电力变换装置
CN103348468A (zh) * 2011-03-04 2013-10-09 日立汽车系统株式会社 半导体组件及半导体组件的制造方法
CN103597729A (zh) * 2011-06-08 2014-02-19 日立汽车系统株式会社 功率模块和使用它的电力转换装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3507682B2 (ja) * 1998-01-09 2004-03-15 株式会社東芝 半導体モジュール
JP2009164156A (ja) * 2007-12-28 2009-07-23 Toyota Motor Corp パワーモジュール
JP5359579B2 (ja) * 2009-06-11 2013-12-04 日産自動車株式会社 半導体装置の製造方法と半導体装置
JP2011151109A (ja) * 2010-01-20 2011-08-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
KR20130123682A (ko) * 2012-05-03 2013-11-13 삼성전자주식회사 반도체 패키지 및 이의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101599484A (zh) * 2008-06-05 2009-12-09 三菱电机株式会社 树脂密封型半导体装置及其制造方法
CN102201398A (zh) * 2008-06-05 2011-09-28 三菱电机株式会社 树脂密封型半导体装置及其制造方法
JP2011029589A (ja) * 2009-06-30 2011-02-10 Denso Corp 半導体装置およびその製造方法
CN102986026A (zh) * 2010-06-30 2013-03-20 日立汽车系统株式会社 功率模块和使用它的电力变换装置
CN103348468A (zh) * 2011-03-04 2013-10-09 日立汽车系统株式会社 半导体组件及半导体组件的制造方法
CN103597729A (zh) * 2011-06-08 2014-02-19 日立汽车系统株式会社 功率模块和使用它的电力转换装置

Also Published As

Publication number Publication date
JPWO2020105556A1 (ja) 2021-05-13
JP7026823B2 (ja) 2022-02-28
WO2020105556A1 (fr) 2020-05-28
CN112997297A (zh) 2021-06-18

Similar Documents

Publication Publication Date Title
CN110462817B (zh) 半导体装置及其制造方法、以及电力转换装置
CN112997297B (zh) 半导体装置、电力变换装置以及半导体装置的制造方法
US11037844B2 (en) Power semiconductor device and method of manufacturing the same, and power conversion device
CN110828409B (zh) 半导体装置、电力变换装置及它们的制造方法
US10770367B2 (en) Semiconductor apparatus, method for manufacturing the same and electric power conversion device
JP7091878B2 (ja) パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
US9437508B2 (en) Method for manufacturing semiconductor device and semiconductor device
CN113875001B (zh) 半导体模块以及电力变换装置
JP6575739B1 (ja) 半導体装置、半導体装置の製造方法および電力変換装置
JP6644196B1 (ja) 半導体装置およびその製造方法ならびに電力変換装置
CN116847534A (zh) 一种电源变换器、内埋集成器件单元、高散热高频功率模组及其制作方法
WO2020148879A1 (fr) Dispositif à semi-conducteur, procédé de production de dispositif à semi-conducteur et dispositif de conversion de puissance
US20220418088A1 (en) Power module with housed power semiconductors for controllable electrical power supply of a consumer, and method for producing same
JP7019024B2 (ja) 半導体装置及び電力変換装置
CN113841235B (zh) 半导体模块、半导体模块的制造方法以及电力变换装置
CN114530435A (zh) 功率半导体模块及电力转换装置
JP7555257B2 (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
WO2022123870A1 (fr) Corps de circuit électrique, dispositif de conversion de puissance et procédé de fabrication de corps de circuit électrique
JP3242736U (ja) 電力半導体モジュール
WO2022107697A1 (fr) Module semi-conducteur de puissance et son procédé de fabrication, et appareil de conversion de courant électrique
CN115223977A (zh) 电力半导体装置、电力半导体装置的制造方法及电力变换装置
CN117769761A (zh) 功率模块以及电力转换装置
JP2022067375A (ja) 電力用半導体装置およびその製造方法ならびに電力変換装置
JP2022067815A (ja) 半導体装置、電力変換装置および半導体装置の製造方法
CN118553692A (zh) 半导体装置及电力转换装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant