CN112953411A - Ultra-wideband power amplifier - Google Patents
Ultra-wideband power amplifier Download PDFInfo
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- CN112953411A CN112953411A CN202110262615.1A CN202110262615A CN112953411A CN 112953411 A CN112953411 A CN 112953411A CN 202110262615 A CN202110262615 A CN 202110262615A CN 112953411 A CN112953411 A CN 112953411A
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- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
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- 238000007906 compression Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses an ultra-wideband power amplifier, which comprises a bias circuit, an amplifying circuit and an inductor L1, wherein the first end of the bias circuit is connected with the first end of the amplifying circuit and is connected with a signal input end through a capacitor C1; the second end of the bias circuit is connected with the second end of the amplifying circuit and is connected with the signal output end through a capacitor C3; the third end of the bias circuit and the third end of the amplifying circuit are respectively grounded, the first end of the inductor L1 is connected with the second end of the bias circuit, the second end of the amplifying circuit and the first end of the capacitor C3, and the second end of the inductor L1 is connected with a power supply.
Description
Technical Field
The invention relates to the technical field of radio frequency integrated circuits, in particular to an ultra-wideband power amplifier circuit.
Background
The ultra-wideband power amplifier is a very important constituent unit in a radio frequency front-end module, and mainly has the functions of amplifying signals and providing certain power gain. The power amplifier is divided into an ultra-wideband power amplifier, a wideband power amplifier and a narrowband power amplifier according to different bandwidths, and the input impedance and the output impedance of the ultra-wideband power amplifier are generally matched with the system impedance of 50 ohms, so that the ultra-wideband power amplifier is widely applied.
The distributed structure becomes a common structure in the design of the ultra-wideband power amplifier due to the excellent broadband characteristic of the distributed structure, the distributed structure can realize extremely wide bandwidth, but the distributed structure has large area and low efficiency and gain, and although the gain can be improved through multi-stage cascade, the distributed structure can occupy a large amount of chip area, and the design difficulty is improved by utilizing the non-uniform structure while the efficiency can be improved.
Currently, in the related art, a distributed structure can achieve an extremely wide bandwidth, but has a large area and low efficiency and gain, while a darlington structure can provide excellent performance in various aspects, such as high gain and wide bandwidth, but the conventional darlington structure has a problem of low output power. Increasing the power generally requires increasing the size of the transistor to increase the output current, but this results in a smaller load impedance and a larger impedance transformation ratio required by the power amplifier. The large impedance transformation ratio is difficult to realize compared with the output matching of the ultra-wideband power amplifier, so that the output power of the existing ultra-wideband power amplifier is low.
Disclosure of Invention
The ultra-wideband power amplifier provided by the embodiment of the invention can solve the problem of low output power of the ultra-wideband power amplifier.
In order to solve the technical problem, the technical scheme of the invention is realized as follows.
The embodiment of the invention provides an ultra-wideband power amplifier, which comprises a bias circuit, an amplifying circuit and an inductor L1, wherein the first end of the bias circuit is connected with the first end of the amplifying circuit and is connected with a signal input end through a capacitor C1; the second end of the bias circuit is connected with the second end of the amplifying circuit and is connected with the signal output end through a capacitor C3; the third terminal of the bias circuit and the third terminal of the amplifying circuit are respectively grounded, the first terminal of the inductor L1 is connected with the second terminal of the bias circuit, the second terminal of the amplifying circuit and the first terminal of the capacitor C3, and the second terminal of the inductor L1 is connected with a power supply; the amplifying circuit comprises transistors M1, M2 and M3, resistors R3, R4 and R5, a capacitor C2 and an inductor L1; a second terminal of the transistor M1 is connected to a first terminal of the amplifying circuit, a third terminal of the transistor M1 is connected to a first terminal of a resistor R3 and a second terminal of a transistor M2, respectively, a second terminal of the resistor R3 and a third terminal of a transistor M2 are connected to each other and to a third terminal of the amplifying circuit, and a first terminal of the transistor M1 and a first terminal of the transistor M2 are both connected to the third terminal of the transistor M3; the second terminal of the transistor M3 is connected to the first terminal of the resistor R4, the first terminal of the resistor R5 and the first terminal of the capacitor C2, the second terminal of the resistor R5 and the second terminal of the capacitor C2 are connected to ground, and the second terminal of the resistor R4 and the first terminal of the transistor M3 are connected to each other and to the second terminal of the amplifying circuit.
In the embodiment provided by the invention, the bias circuit comprises resistors R1 and R2, and the resistors R1 and R2 are connected in series; the first end of the resistor R1 is connected with the second end of the bias circuit, the second end of the resistor R2 is connected with the third end of the bias circuit, and the second end of the resistor R1 and the first end of the resistor R2 are both connected with the first end of the bias circuit. The transistors M1, M2 and M3 are all FET transistors.
Compared with the existing ultra-wideband power amplifier, the ultra-wideband power amplifier has larger output power, realizes the advantages of ultra-wideband, high output power, large dynamic range and the like, solves the contradiction between the performances of the ultra-wideband power amplifier circuit such as bandwidth, output power and the like, and greatly improves the practicability of the ultra-wideband power amplifier circuit.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ultra-wideband power amplifier provided in an embodiment of the present application;
fig. 2 is a schematic circuit diagram of an ultra-wideband power amplifier according to an embodiment of the present disclosure;
fig. 3 is a diagram of a simulation result of a circuit output 1dB compression point of an ultra-wideband power amplifier provided in an embodiment of the present application.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
The terms "first" and "second", and the like, in the description and in the claims of embodiments of the present invention are used to distinguish the connection ends of circuit elements, and are not used to describe a particular order of circuit elements. For example, the first and second terminals, etc. are different connection terminals for distinguishing the same circuit element, rather than for describing a particular order of a plurality of circuit elements.
Currently, in the related art, a distributed structure can achieve an extremely wide bandwidth, but has a large area and low efficiency and gain, while a darlington structure can provide excellent performance in various aspects, such as high gain and wide bandwidth, but the conventional darlington structure has a problem of low output power. Increasing the power generally requires increasing the size of the transistor to increase the output current, but this results in a smaller load impedance and a larger impedance transformation ratio required by the power amplifier. The large impedance transformation ratio is difficult to realize compared with the output matching of the ultra-wideband power amplifier, so that the output power of the existing ultra-wideband power amplifier is low.
An ultra-wideband power amplifier provided by the embodiments of the present application is described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios.
As shown in fig. 1, an ultra-wideband power amplifier according to an embodiment of the present invention includes a bias circuit 10, an amplification circuit 11, and an inductor L1, where a first end of the bias circuit 10 is connected to a first end of the amplification circuit 11, and is connected to a signal input end through a capacitor C1; a second terminal of the bias circuit 10 is connected to a second terminal of the amplifying circuit 11, and is connected to a signal output terminal through a capacitor C3; the third terminal of the bias circuit 10 and the third terminal of the amplifier circuit 11 are grounded, the first terminal of the inductor L1 is connected to the second terminal of the bias circuit, the second terminal of the amplifier circuit, and the first terminal of the capacitor C3, and the second terminal of the inductor L1 is connected to a power supply.
It is understood that in the embodiment provided by the present invention, the rf signal enters from the signal input terminal RFin into the first capacitor C1, passes through the amplifying circuit 11 configured by the bias circuit 10, and then is output through the signal output terminal RFout of the third capacitor C3.
As shown in fig. 2, in the embodiment provided by the present invention, the bias circuit includes resistors R1 and R2, the resistors R1 and R2 are connected in series; the first end of the resistor R1 is connected with the second end of the bias circuit, the second end of the resistor R2 is connected with the third end of the bias circuit, and the second end of the resistor R1 and the first end of the resistor R2 are both connected with the first end of the bias circuit.
In the embodiment provided by the invention, the amplifying circuit comprises transistors M1, M2 and M3, resistors R3, R4 and R5, and a capacitor C2; a second terminal of the transistor M1 is connected to a first terminal of the amplifying circuit, a third terminal of the transistor M1 is connected to a first terminal of a resistor R3 and a second terminal of a transistor M2, respectively, a second terminal of the resistor R3 and a third terminal of a transistor M2 are connected to each other and to a third terminal of the amplifying circuit, and a first terminal of the transistor M1 and a first terminal of the transistor M2 are both connected to the third terminal of the transistor M3; the second terminal of the transistor M3 is connected to the first terminal of the resistor R4, the first terminal of the resistor R5 and the first terminal of the capacitor C2, the second terminal of the resistor R5 and the second terminal of the capacitor C2 are connected to ground, and the second terminal of the resistor R4 and the first terminal of the transistor M3 are connected to each other and to the second terminal of the amplifying circuit. The working voltage is increased by the cascode darlington structure, so that the output power can be increased.
It is understood that in the embodiment provided by the present invention, the transistors M1, M2, M3 are all FET transistors.
In the prior art, since the breakdown voltage that can be endured by a given power transistor is limited, the embodiment of the present invention adopts a cascode darlington structure, and the third transistor M3 can be properly biased by adjusting the ratio of the fourth resistor R4 and the fifth resistor R5. So that all transistors still operate in a safe voltage range with a doubling of the supply voltage. The output voltage swing of the power amplifier is doubled, the output current of the transistor can be reduced by half, so that the optimal load impedance required by the power amplifier can be increased by four times, the impedance transformation ratio is greatly reduced, and high-power output under the ultra-wideband is realized.
As shown in fig. 3, it can be seen that, as the rf frequency increases from 10MHz to 3000MHz, the 1dB compression point of the circuit output is maintained between 27 dBm and 30dBm, the embodiment of the present invention has a larger output power, realizes the advantages of ultra-wideband, high output power, large dynamic range, etc., solves the contradiction between the performances of the ultra-wideband power amplifier circuit, such as bandwidth and output power, and greatly improves the practicability of the ultra-wideband power amplifier circuit.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. It is therefore intended that the invention not be limited to the exact details and illustrations described and illustrated herein, but fall within the scope of the appended claims and equivalents thereof.
Claims (3)
1. An ultra-wideband power amplifier comprises a bias circuit, an amplifying circuit and an inductor L1, wherein a first end of the bias circuit is connected with a first end of the amplifying circuit and is connected with a signal input end through a capacitor C1; the second end of the bias circuit is connected with the second end of the amplifying circuit and is connected with the signal output end through a capacitor C3; the third terminal of the bias circuit and the third terminal of the amplifying circuit are respectively grounded, the first terminal of the inductor L1 is connected with the second terminal of the bias circuit, the second terminal of the amplifying circuit and the first terminal of the capacitor C3, and the second terminal of the inductor L1 is connected with a power supply; the amplifier circuit is characterized by comprising transistors M1, M2 and M3, resistors R3, R4 and R5 and a capacitor C2; a second terminal of the transistor M1 is connected to a first terminal of the amplifying circuit, a third terminal of the transistor M1 is connected to a first terminal of a resistor R3 and a second terminal of a transistor M2, respectively, a second terminal of the resistor R3 and a third terminal of a transistor M2 are connected to each other and to a third terminal of the amplifying circuit, and a first terminal of the transistor M1 and a first terminal of the transistor M2 are both connected to the third terminal of the transistor M3; the second terminal of the transistor M3 is connected to the first terminal of the resistor R4, the first terminal of the resistor R5 and the first terminal of the capacitor C2, the second terminal of the resistor R5 and the second terminal of the capacitor C2 are connected to ground, and the second terminal of the resistor R4 and the first terminal of the transistor M3 are connected to each other and to the second terminal of the amplifying circuit.
2. The ultra-wideband power amplifier of claim 1, wherein the bias circuit comprises resistors R1 and R2, the resistors R1 and R2 being connected in series;
the first end of the resistor R1 is connected with the second end of the bias circuit, the second end of the resistor R2 is connected with the third end of the bias circuit, and the second end of the resistor R1 and the first end of the resistor R2 are both connected with the first end of the bias circuit.
3. The ultra-wideband power amplifier of claim 1, wherein the transistors M1, M2, M3 are FET transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110262615.1A CN112953411A (en) | 2021-03-10 | 2021-03-10 | Ultra-wideband power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110262615.1A CN112953411A (en) | 2021-03-10 | 2021-03-10 | Ultra-wideband power amplifier |
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| CN112953411A true CN112953411A (en) | 2021-06-11 |
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Citations (9)
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|---|---|---|---|---|
| KR20060061750A (en) * | 2004-12-02 | 2006-06-08 | 한국전자통신연구원 | A triple cascode power amplifier of inner parallel structure with dynamic bias technique |
| CN103107785A (en) * | 2012-12-28 | 2013-05-15 | 龙元才 | B-A class power amplifier |
| CN103595359A (en) * | 2013-10-17 | 2014-02-19 | 天津大学 | 0.1-5GHz CMOS (complementary metal oxide semiconductor) power amplifier |
| CN106936397A (en) * | 2017-03-14 | 2017-07-07 | 中国电子科技集团公司第二十四研究所 | High flat degree broad band amplifier |
| CN108039870A (en) * | 2018-01-08 | 2018-05-15 | 成都智芯测控科技有限公司 | A kind of ultra wide band distribution frequency mixer |
| CN109687831A (en) * | 2018-12-25 | 2019-04-26 | 青海民族大学 | A kind of ultra-wideband amplifier based on Darlington stacked tubes |
| CN110268626A (en) * | 2017-01-26 | 2019-09-20 | 美国亚德诺半导体公司 | The bias modulation active linear of broad band amplifier |
| CN111262534A (en) * | 2020-03-19 | 2020-06-09 | 西安博瑞集信电子科技有限公司 | Self-adaptive bias circuit for power amplifier chip |
| CN111682857A (en) * | 2020-06-23 | 2020-09-18 | 西安博瑞集信电子科技有限公司 | Broadband amplifier |
-
2021
- 2021-03-10 CN CN202110262615.1A patent/CN112953411A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060061750A (en) * | 2004-12-02 | 2006-06-08 | 한국전자통신연구원 | A triple cascode power amplifier of inner parallel structure with dynamic bias technique |
| CN103107785A (en) * | 2012-12-28 | 2013-05-15 | 龙元才 | B-A class power amplifier |
| CN103595359A (en) * | 2013-10-17 | 2014-02-19 | 天津大学 | 0.1-5GHz CMOS (complementary metal oxide semiconductor) power amplifier |
| CN110268626A (en) * | 2017-01-26 | 2019-09-20 | 美国亚德诺半导体公司 | The bias modulation active linear of broad band amplifier |
| CN106936397A (en) * | 2017-03-14 | 2017-07-07 | 中国电子科技集团公司第二十四研究所 | High flat degree broad band amplifier |
| CN108039870A (en) * | 2018-01-08 | 2018-05-15 | 成都智芯测控科技有限公司 | A kind of ultra wide band distribution frequency mixer |
| CN109687831A (en) * | 2018-12-25 | 2019-04-26 | 青海民族大学 | A kind of ultra-wideband amplifier based on Darlington stacked tubes |
| CN111262534A (en) * | 2020-03-19 | 2020-06-09 | 西安博瑞集信电子科技有限公司 | Self-adaptive bias circuit for power amplifier chip |
| CN111682857A (en) * | 2020-06-23 | 2020-09-18 | 西安博瑞集信电子科技有限公司 | Broadband amplifier |
Non-Patent Citations (1)
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