CN108039870A - A kind of ultra wide band distribution frequency mixer - Google Patents
A kind of ultra wide band distribution frequency mixer Download PDFInfo
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- CN108039870A CN108039870A CN201810015802.8A CN201810015802A CN108039870A CN 108039870 A CN108039870 A CN 108039870A CN 201810015802 A CN201810015802 A CN 201810015802A CN 108039870 A CN108039870 A CN 108039870A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
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Abstract
The invention discloses a kind of ultra wide band distribution frequency mixer, including the first radio frequency signal transmission circuit and the local oscillator transmission line for being used for transmission local oscillation signal, first radio frequency signal transmission circuit includes the first transistor group and is used for transmission the first radio-frequency transmission line of radiofrequency signal, the first transistor group includes n transistor, n is the integer not less than 2, the grid of each transistor connects the first radio-frequency transmission line in the first transistor group, source electrode connects local oscillator transmission line, and grounded drain, and on the first radio-frequency transmission line and local oscillator transmission line, there is inductance before and after each transistor in the first transistor group.The present invention builds the artificial transmission line of transmitting radio frequency signal using the parasitic capacitance between the grid of transistor and drain electrode, realize ultra-wideband frequency mixer, the radio frequency and local oscillator bandwidth frequency coverage of ultra-wideband frequency mixer cover girz (GHz) from megahertz (MHz), it is possible to achieve close to the radio frequency bandwidth of transistors characteristics frequency.
Description
Technical field
The present invention relates to twireless radio-frequency communication technical field, and in particular to a kind of ultra wide band distribution frequency mixer.
Background technology
In recent years, under the driving of the application demand of high speed data transfers, broadband test device, software radio etc.,
It is growing to the demand of broadband wireless receiver radio frequency front end.And frequency mixer is essential core in receiver radio frequency front end
One of core module, in receivers frequency mixer be located at behind low-noise amplifier, low-noise amplifier will be received from antenna
Radiofrequency signal carry out low noise amplification after, signal carries out being down-converted to the relatively low intermediate-freuqncy signal of frequency into frequency mixer, for after
Level is further to be handled.The method of traditional solution broadband application demand is by multiple frequency mixers for being covered each by different frequency range
Carry out used in parallel, due to being related to multiple circuits, cause equipment volume big, it is of high cost.Meanwhile in order to ensure receiving width at the same time
Signal in the range of band, multiple frequency mixers need to work at the same time, and cause the power consumption of equipment very big.
In order to overcome tradition to solve the problems, such as that broadband solution is brought, the prior art proposes in need using a covering institute
The broadband mixer of working frequency range replace traditional multiple frequency mixers.And the distribution of most common broadband mixer, that is, traditional
Mixer architecture, traditional distributed mixer architecture is as shown in Figure 1, including transistor group, be used for transmission the sheet of local oscillation signal
Shake transmission line, be used for transmission the first radio-frequency transmission line of radiofrequency signal, transistor group include n transistor M1, M2 ..., Mn, n
For the integer not less than 1, the grid of each transistor connects the first radio-frequency transmission line, drain electrode connection local oscillator transmission in transistor group
Line, source electrode ground connection.On the first radio-frequency transmission line and local oscillation signal transmission line, the company of each transistor and the first radio-frequency transmission line
Inductance is equipped with before and after contact, with being equipped with inductance before and after the tie point of local oscillator transmission line, transistor can be adopted each transistor
With transistors such as NMOS, PMOS, pHEMT and HEMT.Inductance L has been sequentially connected in series on first radio-frequency transmission line11、L12、…、L1m；This
Shake and be sequentially connected in series inductance L on transmission line21、L22、…、L2m；M=n+1；So transistor MjDrain electrode front end connection inductance L2j,
Rear end connection inductance L2q, q=j+1；J=1,2 ..., n；Transistor MjGate front end connection inductance L1j, rear end connection inductance
L1q, q=j+1；J=1,2 ..., n.First radio-frequency transmission line is by the parasitic capacitance between the grid and source electrode of each transistor and electricity
Feel L1i, i=1,2 ..., m constructs the artificial transmission line of transmitting radio frequency signal, posting between the drain electrode of each transistor and source electrode
Raw capacitance and inductance L2i, i=1,2 ..., m construct the artificial transmission line of transmission local oscillation signal.Whole thought is by crystalline substance
Some inductance L is introduced between body pipe, recycles the parasitic capacitance C between the grid of transistor and source electrodegsCome together to build artificial biography
Defeated line realizes very wide frequency bandwidth (bandwidth), due to the larger (C of the parasitic capacitance of transistorgsIt is larger), bandwidth
Limited, i.e., the bandwidth that traditional artificial transmission line's construction method can be realized is limited.
The content of the invention
The technical problems to be solved by the invention are that the bandwidth that distributed frequency mixer traditional in the prior art can be realized has
Limit realizes the broader bandwidth of distributed frequency mixer, and it is an object of the present invention to provide a kind of ultra wide band distribution frequency mixer.
The present invention is achieved through the following technical solutions：
A kind of ultra wide band distribution frequency mixer, including the first radio frequency signal transmission circuit and the sheet for being used for transmission local oscillation signal
Shake transmission line, and first radio frequency signal transmission circuit includes the first transistor group and is used for transmission the first radio frequency of radiofrequency signal
Transmission line, the first transistor group include n transistor, and n is the integer not less than 2, each crystal in the first transistor group
The grid of pipe connects the first radio-frequency transmission line, source electrode connection local oscillator transmission line, grounded drain.In the technical program, for radio frequency
The transmission of signal, is built artificial using the parasitic capacitance between the grid of transistor and drain electrode and the first radio frequency signal transmission line
Transmission line carrys out transmitting radio frequency signal, since the parasitic capacitance between grid and drain electrode is generally less than posting between grid and source electrode
Raw capacitance, builds the artificial transmission line of transmitting radio frequency signal using it, realizes radio frequency band more broader than traditional distributed structure
Width, the mixer in the application can realize the radio frequency bandwidth close to transistors characteristics frequency；For the biography of local oscillation signal
It is defeated, then transmit local oscillator letter using the parasitic capacitance between the source electrode of transistor and drain electrode and local oscillator transmission line structure artificial transmission line
Number, it is ensured that very wide local oscillator bandwidth.
Further, above-mentioned ultra wide band distribution frequency mixer further includes capacitance C1And C3, the local oscillation signal transmission line passes through electricity
Hold C3Coupling access local oscillation signal；First radio-frequency transmission line passes through capacitance C1Couple incoming radio frequency signal.
As a further improvement on the present invention, above-mentioned ultra wide band distribution frequency mixer further includes the second radio signal transmission electricity
Road, second radio frequency signal transmission circuit is identical with the first radio frequency signal transmission circuit structure and shared local oscillator transmission line, and
Two radio frequency signal transmission circuits are symmetrical also on local oscillator transmission line with the first radio frequency signal transmission circuit；Second radiofrequency signal
Transmission circuit includes second transistor group and is used for transmission the second radio-frequency transmission line of radiofrequency signal, the second transistor group bag
Include n transistor, the transistor in the second transistor group is different transistors from the transistor in the first transistor group；
Source electrode connection local oscillator transmission line, grounded drain, the grid of each transistor connect the second radio-frequency transmission line in second transistor group.
Since frequency mixer is located at the rear end of low-noise amplifier, the amplified signal of low-noise amplifier is passed through in directly processing, therefore, needs
The linearity that will be higher.Inventor also found that traditional distributed frequency mixer generally all passes through increasing in long-term research practice
The mode of transistor in big circuit solves the problems, such as high linearity, but larger transistor size, corresponding parasitic electricity
It is also larger to hold Cgs, causes the deterioration of mixer bandwidth, traditional distributed frequency mixer is between bandwidth and linearity two indices
There are the relation of contradiction.In addition, the input 1-dB power (IP of general distribution frequency mixer1dB) it is all relatively low, in order to realize compared with
High IP1dB, traditional solution method is to increase the size of transistor, and the consequence that the size for increasing transistor is brought is：Crystal
The parasitic capacitance (parasitic capacitance of grid to source electrode and drain-to-source) of pipe increases also with the increase of size, in turn results in
The deterioration of bandwidth, in order to overcome traditional solution IP1dBThe contradiction between contradiction, the linearity and bandwidth between bandwidth, this skill
Art scheme further provides the high linearity using complementary structure on the basis of above-mentioned ultra wide band distribution mixer architecture
Ultra wide band distribution frequency mixer, the frequency mixer are realized higher under the premise of the bandwidth of above-mentioned ultra wide band distribution frequency mixer is kept
The linearity.Transistor in said second transistor group and the transistor in the first transistor group refer to for different transistors
Two-transistor group and the first transistor group not crystal sharing pipe, also the transistor in second transistor group with the first transistor group
Transistor be not same transistor, but these transistors can have identical structure and parameter, two groups of crystal
Pipe is of the same size.Preferably, the transistor ruler in the transistor and the first transistor group in the second transistor group
Very little identical and arrangement is symmetrical on local oscillator transmission line.
As the another improvement of the present invention, in order to make rf inputs that there is preferable matching status, above-mentioned ultra wide band point
Cloth frequency mixer further includes input matching circuit, the input terminal incoming radio frequency signal of the input matching circuit, input matching electricity
The output terminal on road connects the first radio-frequency transmission line and the second radio frequency signal transmission line at the same time, is penetrated to the first radio-frequency transmission line and first
Frequency transmission line and the second radio frequency signal transmission line output radiofrequency signal.
Further, the input matching circuit includes capacitance C1, capacitance C2With inductance L1；Capacitance C1One end access radio frequency letter
Number, other end connection inductance L1One end；Inductance L1Other end connection capacitance C2One end, capacitance C2The other end ground connection；It is described
Inductance L1The other end connect the first radio-frequency transmission line and the second radio frequency signal transmission line at the same time, to the first radio-frequency transmission line and the
One radio-frequency transmission line and the second radio frequency signal transmission line output radiofrequency signal.
Further, in order to provide operating voltage to transistor, above-mentioned ultra wide band distribution frequency mixer further includes the first biasing
Circuit and the second biasing circuit, first radio-frequency transmission line and the second radio-frequency transmission line are also connected with the first biasing circuit, institute
Local oscillator transmission line is stated also with the second biasing circuit to be connected.
Preferably, first biasing circuit includes resistance R2, resistance R2One end connects the first radio-frequency transmission line and the at the same time
The input terminal of two radio-frequency transmission lines, other end access grid voltage Vg.
Second biasing circuit includes resistance R1, resistance R1Source voltage Vs, other end connection local oscillation signal are accessed in one end
Input terminal.
Further, the local oscillation signal transmission line output terminal is also associated with intermediate-frequency filter.Preferably, the intermediate frequency filtering
Device includes capacitance C4, capacitance C4One end connection local oscillation signal transmission line output terminal, other end ground connection.
Compared with prior art, the present invention have the following advantages and advantages：
1st, a kind of ultra wide band distribution frequency mixer of the invention utilizes the parasitic capacitance between the grid of transistor and drain electrode
To build the artificial transmission line of transmitting radio frequency signal, since the parasitic capacitance between grid and drain electrode is generally less than grid and source
Parasitic capacitance between pole, builds radio-frequency transmission line using it, realizes radio frequency bandwidth more broader than traditional distributed structure, this
Frequency mixer in application can realize the radio frequency bandwidth close to transistors characteristics frequency；
2nd, a kind of ultra wide band distribution frequency mixer of the invention, the artificial transmission line for transmitting local oscillation signal utilize transistor
Parasitic capacitance structure between source electrode and drain electrode, it is ensured that very wide local oscillator bandwidth；
3rd, a kind of ultra wide band distribution frequency mixer of the present invention, is also provided with input matching circuit so that the radio frequency of frequency mixer
Input terminal has preferable matching status；
4th, a kind of ultra wide band distribution frequency mixer of the present invention, radio frequency letter is carried out using the radio-frequency transmission line of two mutual symmetries
Number transmission when, it is single for the angle of the linearity, be equivalent in traditional distributed frequency mixer and increase the size of transistor
One times, but radio frequency bandwidth but remains unchanged, compared with existing distributed mixer, have broader radio frequency bandwidth and
The linearity of higher.
Brief description of the drawings
Attached drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is the structure diagram of distributed frequency mixer in the prior art；
Fig. 2 is the structure diagram of the ultra wide band distribution frequency mixer in embodiment 1；
Fig. 3 is the structure diagram of the ultra wide band distribution frequency mixer in embodiment 4；
Fig. 4 is the structure diagram of the ultra wide band distribution frequency mixer in embodiment 2；
Fig. 5 is the radio frequency of ultra wide band distribution frequency mixer and the return loss analogous diagram of local oscillator port in embodiment 2；
Fig. 6 is that the ultra wide band distribution frequency mixer in embodiment 2 is equal to 100MHz in IF frequency and local oscillation power is equal to
The change analogous diagram of conversion loss radio frequency frequency during 15dBm；
Fig. 7 is the structure diagram of the ultra wide band distribution frequency mixer in embodiment 3；
Fig. 8 is the radio frequency of ultra wide band distribution frequency mixer and the return loss analogous diagram of local oscillator port in embodiment 3；
Fig. 9 is that the ultra wide band distribution frequency mixer in embodiment 3 is equal to 100MHz in IF frequency and local oscillation power is equal to
The change analogous diagram of conversion loss radio frequency frequency during 15dBm；
Figure 10 is that the ultra wide band distribution frequency mixer in embodiment 3 is equal in rf frequency equal to 20GHz, local frequency
Conversion loss when 19.9GHz and local oscillation power are equal to 15dBm is with the change analogous diagram of RF input power；
Figure 11 is the structure diagram of the ultra wide band distribution frequency mixer in embodiment 5；
Figure 12 is the radio frequency of ultra wide band distribution frequency mixer and the return loss analogous diagram of local oscillator port in embodiment 5；
Figure 13 is that the ultra wide band distribution frequency mixer in embodiment 5 is equal in IF frequency equal to 100MHz, local oscillation power
During 15dBm conversion loss with frequency change analogous diagram；
Figure 14 is that the ultra wide band distribution frequency mixer in embodiment 5 is equal in rf frequency equal to 20GHz, local frequency
Conversion loss when 19.9GHz and local oscillation power are equal to 15dBm is with the change analogous diagram of RF input power.
Embodiment
In the prior art, traditional distributed mixer architecture is as shown in Figure 1, including transistor group, be used for transmission local oscillator
The local oscillator transmission line of signal, the first radio-frequency transmission line for being used for transmission radiofrequency signal, transistor group include n transistor M1,
M2 ..., Mn, n be integer not less than 1, the grid of each transistor connects the first radio-frequency transmission line in transistor group, drain electrode connects
Connect local oscillator transmission line, source electrode ground connection.On the first radio-frequency transmission line and local oscillation signal transmission line, each transistor and the first radio frequency
Inductance is equipped with before and after the tie point of transmission line, each transistor is brilliant with being equipped with inductance before and after the tie point of local oscillator transmission line
Body pipe can use the transistors such as NMOS, PMOS, pHEMT and HEMT.Inductance L has been sequentially connected in series on first radio-frequency transmission line11、
L12、…、L1m；Inductance L has been sequentially connected in series on local oscillator transmission line21、L22、…、L2m；M=n+1；So transistor MjDrain electrode front end
Connect inductance L2j, rear end connection inductance L2q, q=j+1；J=1,2 ..., n；Transistor MjGate front end connection inductance L1j, after
End connection inductance L1q, q=j+1；J=1,2 ..., n.Parasitic capacitance and first between the grid and source electrode of above-mentioned each transistor
Inductance L on radio-frequency transmission line1i, i=1,2 ..., m build the artificial transmission line to form a transmitting radio frequency signal, each transistor
Drain electrode and source electrode between parasitic capacitance and local oscillator transmission line on inductance L2i, i=1,2 ..., m form transmission local oscillation signal
Artificial transmission line.In practical applications, the first radio-frequency transmission line can pass through capacitance C1Incoming radio frequency signal is coupled, and its is defeated
Enter end in inductance L11Afterwards or inductance L11Biasing resistor R is connected before2, and it is in inductance L1mAlso it is connected with electricity in turn afterwards
Hold C5With resistance RG1, resistance RG1Ground connection；Local oscillator transmission line can pass through capacitance C3Coupling access local oscillation signal, and its input terminal exists
Capacitance C3Biasing resistor R is connected afterwards1, its output terminal is also associated with capacitance C4.In Fig. 1, G (Gate) represents the grid of transistor,
D (Drain) represents the drain electrode of transistor, and S (Source) represents the source electrode of transistor.
This distribution frequency mixer recycles transistor gate and source electrode by introducing some inductance L between transistor
Parasitic capacitance Cgs comes together to build the very wide frequency bandwidth of artificial transmission line's realization, but due to the parasitic capacitance Cgs of transistor
Larger, the bandwidth that can be realized is limited.Therefore present inventor proposes a kind of ultra wide band distribution frequency mixer of the application,
The frequency mixer can be mixed as the down coversion of the ultra wide band high-linearity of the systems such as wide-band communication system and high speed data transfers
Frequency device, it is applied in broadband receiver, realizes the down coversion of signal.Its radio frequency and local oscillator bandwidth frequency coverage from megahertz
Hereby (MHz) covers girz (GHz).
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
In the following description, a large amount of specific details are elaborated in order to provide a thorough understanding of the present invention.However, for this
Field those of ordinary skill it is evident that：The present invention need not be carried out using these specific details.In other instances, it is
The present invention that avoids confusion, does not specifically describe known structure, circuit, material or method.
Throughout the specification, meaning is referred to " one embodiment ", " embodiment ", " example " or " example "
：It is comprised in reference to a particular feature, structure, or characteristic that the embodiment or example describe at least one embodiment of the present invention.
Therefore, the phrase " in one embodiment ", " in embodiment ", " example " occurred in each place of entire disclosure
Or " example " is not necessarily all referring to the same embodiment or example.Furthermore, it is possible to any appropriate combination and or sub-portfolio will be specific
Feature, structure or property combination in one or more embodiments or example.In addition, those of ordinary skill in the art should manage
Solution, diagram is provided to the purpose of explanation provided herein, and diagram is not necessarily drawn to scale.Art used herein
Language "and/or" includes any and all combination for the project that one or more correlations are listed.
【Embodiment 1】
As shown in Fig. 2, a kind of ultra wide band distribution frequency mixer of the present invention includes the first radio frequency signal transmission circuit, for passing
Local oscillator transmission line, the first biasing circuit and the second biasing circuit of defeated local oscillation signal, the first radio frequency signal transmission circuit bag
Include the first transistor group and be used for transmission the first radio-frequency transmission line of radiofrequency signal, the first transistor group includes n crystal
Pipe M1, M2 ..., Mn, n be integer not less than 2, the grid of each transistor connects the first radio frequency transmission in the first transistor group
Line, source electrode connection local oscillator transmission line, and grounded drain.On the first radio-frequency transmission line and local oscillation signal transmission line, each crystal
Pipe with being equipped with inductance before and after the tie point of the first radio-frequency transmission line, each transistor with before and after the tie point of local oscillator transmission line
Equipped with inductance.Specifically：Inductance L has been sequentially connected in series on first radio-frequency transmission line11、L12、…、L1m；Inductance L11As the first radio frequency
The input terminal of transmission line；Inductance L has been sequentially connected in series on local oscillator transmission line21、L22、…、L2m；M=n+1；Inductance L21Passed as local oscillator
The input terminal of defeated line；So transistor MjSource electrode front end connection inductance L2j, rear end connection inductance L2q, q=j+1；J=1,
2 ..., n；Transistor MjGate front end connection inductance L1j, rear end connection inductance L1q, q=j+1；J=1,2 ..., n.It is above-mentioned each
Parasitic capacitance between the grid of transistor and drain electrode and the inductance L on the first radio-frequency transmission line1i, i=1,2 ..., m structure shape
Into the artificial transmission line of a transmitting radio frequency signal, parasitic capacitance and local oscillator transmission line between the drain electrode of each transistor and source electrode
On inductance L2i, i=1,2 ..., m form the artificial transmission line of transmission local oscillation signal.The construction method of artificial transmission line is ability
Method and structure well known to field technique personnel, repeats no more in the present embodiment.
Inductance L21Pass through a capacitance C3Coupling accesses local oscillation signal and is connected with the second biasing circuit, second biasing
Circuit includes resistance R1, resistance R1Source voltage Vs is accessed in one end, and the other end is connected to inductance L21With capacitance C3Between.Inductance L11
Pass through a capacitance C1Incoming radio frequency signal, first biasing circuit include resistance R2, resistance R2One end is connected to inductance L11Before
End or inductance L11Rear end, foregoing inductance L11Rear end refers to inductance L11With inductance L12One end of connection, inductance L11The other end
It is then front end, resistance R2Other end access grid voltage Vg.Biasing circuit is used to provide bias voltage to transistor, it is ensured that crystal
Pipe is biased in the working status of needs.
The output terminal of the local oscillation signal transmission line is also associated with intermediate-frequency filter, and the intermediate-frequency filter includes capacitance
C4, capacitance C4One end connection local oscillation signal transmission line output terminal (inductance L2mRear end), other end ground connection.In the present embodiment, intermediate frequency
Wave filter is by a capacitance C for being parallel to ground4Realize, improve radio frequency and local oscillator port to the isolation between intermediate frequency.
The transistor uses metal-oxide-semiconductor, is particularly NMOS, can also use PMOS, pHEMT in other embodiments
Or the transistor such as HEMT.Inductance in the present embodiment can be, but not limited to using microstrip line, the inductance of lumped elements.
The inductance L of first radio frequency signal transmission line1mRear end is also associated with capacitance C successively5With resistance RG1, resistance RG1One end
Connect capacitance C5, other end ground connection.
In the present embodiment, by introducing some inductance L between transistor, for the transmission line of radio signal transmission, utilize
Parasitic capacitance structure artificial transmission line between the grid of transistor and drain electrode, realizes ultra-wideband frequency mixer, ultra wide band mixing
The radio frequency and local oscillator bandwidth frequency coverage of device cover girz (GHz) from megahertz (MHz), it is possible to achieve close to crystal
The radio frequency bandwidth of pipe characteristic frequency.The circuit structure proposed in the present embodiment is used for the integrated circuit in CMOS or GaAs techniques
During design, can be widely used in high data rate communication, reconfigurable software radio and wideband electromagnetic spectrum monitoring etc. is
In system.
Above-mentioned inductance L11、L1mValue it is equal, the inductance value of remaining inductance is equal, L11、L1mInductance value be other inductance
It is general.
【Embodiment 2】
The present embodiment provides a kind of particular circuit configurations of ultra wide band distribution frequency mixer, it is the ultra-wide in embodiment 1
Structure with distributed frequency mixer when n takes 3, when m takes 4.
As shown in figure 4, ultra wide band distribution frequency mixer includes：First radio-frequency transmission line, local oscillator transmission line, 3 transistors
M1, M2, M3, the first radio-frequency transmission line include the inductance L being sequentially connected in series11、L12、L13、L14, local oscillator transmission line is including being sequentially connected in series
Inductance L21、L22、L23、L24, capacitance C3, capacitance C1, resistance R1, capacitance C4, capacitance C5, resistance R2, resistance RG1.Inductance L11As
The input terminal of first radio-frequency transmission line, its one end pass through capacitance C1Incoming radio frequency signal RF；Inductance L21As local oscillator transmission line
Input terminal, its one end pass through capacitance C3Access local oscillation signal LO；The grid connection inductance L of transistor M111The other end and inductance
L12One end, source electrode connection inductance L21The other end and inductance L22One end, grounded drain；The grid connection electricity of transistor M2
Feel L12The other end and inductance L13One end, source electrode connection inductance L22The other end and inductance L23One end, grounded drain；It is brilliant
The grid connection inductance L of body pipe M313The other end and inductance L14One end, source electrode connection inductance L23The other end and inductance L24
One end, grounded drain；Resistance R1One end connection inductance L21One end, other end access source voltage Vs；Resistance R2One end connects
Meet inductance L11The other end, other end access grid voltage Vg；Inductance L24The other end export intermediate frequency after frequency mixer frequency conversion
Signal IF；Capacitance C4One end connection inductance L24The other end, the other end ground connection；Capacitance C5One end connection inductance L14The other end,
The other end passes through resistance RG1Ground connection.
Parasitic capacitance and inductance L between the respective grid of 3 transistors M1, M2, M3 and drain electrode11、L12、L13、L14Structure
The artificial transmission line of transmitting radio frequency signal, parasitic capacitance and electricity between the respective drain electrode of 3 transistors M1, M2, M3 and source electrode
Feel L21、L22、L23、L24Construct the artificial transmission line of transmission local oscillation signal.
Empirical tests, using characteristic frequency fTUltra-wide close in the present embodiment of the GaAs pHEMT process implementings of 90GHz
The return loss of the distributed frequency mixer of band, its prevention at radio-frequency port and local oscillator port as shown in figure 5, its in IF frequency=100MHz and
The change of conversion loss radio frequency frequency is as shown in Figure 6 during local oscillation power=15dBm.Foregoing prevention at radio-frequency port is capacitance C1Access
One end of radiofrequency signal, local oscillator port are capacitance C3One end of incoming radio frequency signal, this external inductance L24The other end be intermediate frequency end
Mouthful.
As shown in Figure 5, the distributed mixer in the present embodiment, its radio frequency and local oscillator return loss are arrived in DC
- 8dB is superior in the frequency range of 100GHz, bandwidth has reached approximately the characteristic frequency of transistor；The present embodiment as shown in Figure 6
In distributed mixer when IF frequency is 100MHz and local oscillation power is 15dBm, conversion loss is in rf frequency
10dB is superior in frequency range from 0.2GHz to 80GHz.
【Embodiment 3】
The present embodiment provides a kind of particular circuit configurations of ultra wide band distribution frequency mixer, it is the ultra-wide in embodiment 1
Structure with distributed frequency mixer when n takes 2, when m takes 3.
As shown in fig. 7, ultra wide band distribution frequency mixer includes：First radio-frequency transmission line, local oscillator transmission line, 2 transistors
M1, M2, the first radio-frequency transmission line include the inductance L being sequentially connected in series11、L12、L13, local oscillator transmission line includes the inductance that is sequentially connected in series
L21、L22、L23, capacitance C3, capacitance C1, resistance R1, resistance R2, capacitance C4, capacitance C5, resistance RG1。
Inductance L11As the input terminal of the first radio-frequency transmission line, its one end passes through capacitance C1Incoming radio frequency signal RF；Inductance
L21As the input terminal of local oscillator transmission line, its one end passes through capacitance C3Access local oscillation signal LO；The grid connection electricity of transistor M1
Feel L11The other end and inductance L12One end, source electrode connection inductance L21The other end and inductance L22One end, grounded drain；It is brilliant
The grid connection inductance L of body pipe M212The other end and inductance L13One end, source electrode connection inductance L22The other end and inductance L23
One end, grounded drain；Resistance R1One end connection inductance L21One end, other end access source voltage Vs；Resistance R2One end connects
Meet inductance L11The other end, other end access grid voltage Vg；Inductance L23The other end export intermediate frequency after frequency mixer frequency conversion
Signal IF；Capacitance C4One end connection inductance L23The other end, the other end ground connection；Capacitance C5One end connection inductance L13The other end,
The other end passes through resistance RG1Ground connection.
Parasitic capacitance between the grid of parasitic capacitance, transistor M2 between the grid of transistor M1 and drain electrode and drain electrode
With inductance L11、L12、L13Construct the artificial transmission line of transmitting radio frequency signal；Parasitic electricity between the drain electrode of transistor M1 and source electrode
Hold, parasitic capacitance and inductance L between the drain electrode of transistor M2 and source electrode21、L22、L23Construct the artificial biography of transmission local oscillation signal
Defeated line.
The technique used in the implementation case is different from embodiment 2, adopts the technology that GaAs is enhanced in the present embodiment
PHEMT techniques, and 2 mixing units are set, each transistor and coupled inductance form a mixing unit.Experience
Demonstrate,prove, the prevention at radio-frequency port of the distributed frequency mixer in the present embodiment and the return loss of local oscillator port are as shown in Figure 8；In IF frequency
The change of conversion loss radio frequency frequency is as shown in Figure 9 during=100MHz and local oscillation power=15dBm；Rf frequency=
Conversion loss when 20GHz, local frequency=19.9GHz and local oscillation power=15dBm with RF input power change such as
Shown in Figure 10.Foregoing prevention at radio-frequency port is capacitance C1One end of incoming radio frequency signal, local oscillator port are capacitance C3Incoming radio frequency signal
One end, this external inductance L23The other end be intermediate frequency port.
As shown in Figure 8, the frequency of the radio frequency of the distributed frequency mixer in the present embodiment and local oscillator return loss in DC to 50GHz
- 10dB is superior in the range of rate；As shown in Figure 9, the distributed frequency mixer in the present embodiment is in IF frequency=100MHz and this
Shake power=15dBm when, conversion loss is superior to 10dB in rf frequency in frequency range from 0.2GHz to 45GHz；By scheming
10 understand that the distributed frequency mixer in the present embodiment is in rf frequency=20GHz, local frequency=19.9GHz and local oscillation power
Input 1-dB gain compressions power during=15dBm is 1dBm.
【Embodiment 4】
Since frequency mixer is located at the rear end of low-noise amplifier, the amplified letter of low-noise amplifier is passed through in directly processing
Number, therefore, it is necessary to the higher linearity, traditional distributed frequency mixer is generally all by way of the transistor in increasing circuit
To solve the problems, such as high linearity, but larger transistor size, corresponding parasitic capacitance CgsAlso it is larger, cause frequency mixer band
Wide deterioration.In addition, the input 1-dB power (IP of general distribution frequency mixer1dB) all relatively low, it is higher in order to realize
IP1dB, traditional solution method is to increase the size of transistor, and the consequence that the size for increasing transistor is brought is：Transistor
Parasitic capacitance (including grid to the parasitic capacitance of source electrode, the parasitic capacitance of drain-to-source) increases also with the increase of size
Greatly, the deterioration of bandwidth is in turn resulted in.There are contradiction between bandwidth and linearity two indices for i.e. traditional distributed frequency mixer
Relation.In order to solve this problem, present inventor also proposed following bandwidth and the linearity be superior to it is traditional
The high linearity ultra wide band distribution frequency mixer of distributed frequency mixer.
As shown in figure 3, a kind of ultra wide band distribution frequency mixer, including the first radio frequency signal transmission circuit, the second radio frequency letter
Number transmission circuit, the local oscillator transmission line for being used for transmission local oscillation signal, input matching circuit, the first biasing circuit and the second biased electrical
Road.
First radio frequency signal transmission circuit includes the first transistor group and is used for transmission the first radio frequency of radiofrequency signal
Transmission line, the first transistor group include n transistor M11, M12 ..., M1n, n be integer not less than 2, first crystal
The grid of each transistors of Guan Zuzhong connects the first radio-frequency transmission line, source electrode connection local oscillator transmission line, grounded drain, and first
It is every in the first transistor group on the first radio-frequency transmission line and local oscillation signal transmission line on radio-frequency transmission line and local oscillator transmission line
It is equipped with inductance before and after the tie point of a transistor and the first radio-frequency transmission line, each transistor and local oscillator in the first transistor group
Inductance is equipped with before and after the tie point of transmission line.Specifically：Inductance L has been sequentially connected in series on first radio-frequency transmission line1i, i=1,
2 ..., m；M=n+1；Inductance L11Input terminal as the first radio-frequency transmission line；Inductance L has been sequentially connected in series on local oscillator transmission line2i,
I=1,2 ..., m；M=n+1；Inductance L21Input terminal as local oscillator transmission line；The source electrode front end connection electricity of so transistor M1j
Feel L2j, rear end connection inductance L2q, q=j+1；J=1,2 ..., n；The gate front end connection inductance L of transistor M1j1j, rear end connects
Meet inductance L1q, q=j+1；J=1,2 ..., n.
Transistor M11, M12 ..., the parasitic capacitance between the grid of M1n and drain electrode and inductance L1i(i=1,2 ..., m) structure
The artificial transmission line's (radio-frequency transmission line I in Fig. 3) for having built a transmitting radio frequency signal, transistor M11, M12 ..., the leakage of M1n
Parasitic capacitance and inductance L between pole and source electrode2i(i=1,2 ..., m) is built into the artificial transmission line of transmission local oscillation signal (in Fig. 3
Local oscillator transmission line I).
Second radio frequency signal transmission circuit is identical with the first radio frequency signal transmission circuit structure and the transmission of shared local oscillator
Line, the second radio frequency signal transmission circuit are symmetrical also on local oscillator transmission line with the first radio frequency signal transmission circuit.Specifically, it is described
Second radio frequency signal transmission circuit includes second transistor group and is used for transmission the second radio-frequency transmission line of radiofrequency signal, and described the
Two-transistor group include n transistor M21, M22 ..., M2n, n be integer not less than 2, each crystal in second transistor group
Source electrode connection local oscillator transmission line, grounded drain, the grid of pipe connect the second radio-frequency transmission line, and in the second radio-frequency transmission line and this
Shake on transmission line, on the second radio-frequency transmission line and local oscillation signal transmission line, each transistor and second in second transistor group
It is equipped with inductance before and after the tie point of radio-frequency transmission line, the tie point of each transistor and local oscillator transmission line in second transistor group
It is identical with the tie point of local oscillator transmission line with each transistor in the first transistor group.More specifically, on the second radio-frequency transmission line
It has been sequentially connected in series inductance L3i, i=1,2 ..., m；M=n+1；Inductance L31Input terminal as the second radio-frequency transmission line；It is so brilliant
The source electrode front end connection inductance L of body pipe M2j2j, rear end connection inductance L2q, q=j+1；J=1,2 ..., n；The grid of transistor M2j
Pole front end connection inductance L3j, rear end connection inductance L3q, q=j+1；J=1,2 ..., n.Above-mentioned transistor M21, M22 ..., M2n
Grid and drain electrode between parasitic capacitance and inductance L1i(i=1,2 ..., m) constructs the people of an other transmitting radio frequency signal
Work transmission line (radio-frequency transmission line II in Fig. 3).
Inductance L21Pass through a capacitance C3Coupling accesses local oscillation signal and is connected with the second biasing circuit, second biasing
Circuit includes resistance R1, resistance R1Source voltage Vs is accessed in one end, and the other end is connected to inductance L21With capacitance C3Between.Inductance L11
With inductance L31By input matching circuit incoming radio frequency signal, the input terminal incoming radio frequency signal of the input matching circuit,
The output terminal of input matching circuit connects inductance L at the same time11With inductance L31, specifically, input matching circuit includes capacitance C1, capacitance
C2With inductance L1；Capacitance C1One end incoming radio frequency signal, other end connection inductance L1One end；Inductance L1The other end connection capacitance
C2One end, capacitance C2The other end ground connection；The inductance L1The other end connect inductance L at the same time11With inductance L31 ,To the first radio frequency
Transmission line and the first radio-frequency transmission line and the second radio frequency signal transmission line output radiofrequency signal.
First biasing circuit includes resistance R2, resistance R2One end is connected to inductance L at the same time11With inductance L31Front end, separately
One end access grid voltage Vg.Biasing circuit is used to provide bias voltage to transistor, it is ensured that work of the transistor biasing in needs
Make state.Inductance L11With inductance L31Front end refers to inductance L11With inductance L31The one end being connected with input matching circuit.
The local oscillation signal transmission line output terminal is also associated with intermediate-frequency filter, and the intermediate-frequency filter includes capacitance C4,
Capacitance C4One end connection local oscillation signal transmission line output terminal (inductance L2mRear end), other end ground connection.
The inductance L of first radio frequency signal transmission line1mRear end is also associated with capacitance C successively5With resistance RG1, resistance RG1One end
Connect capacitance C5, other end ground connection.
The inductance L of second radio frequency signal transmission line3mRear end is also associated with capacitance C successively6With resistance RG2, resistance RG2One end
Connect capacitance C6, other end ground connection.
The transistor uses metal-oxide-semiconductor, is particularly NMOS.Transistor and first crystal in the second transistor group
The transistor size of Guan Zuzhong is identical and arrangement is symmetrical on local oscillator transmission line.Inductance in the implementation case can use collection
Total inductance element is realized using microstrip line.
In the present embodiment, 3 artificial transmission line's (radio-frequency transmission line I, radio frequencies of transmitting radio frequency signal of transmitting radio frequency signal
Transmission line II, transmit local oscillation signal local oscillator transmission line line), radio frequency output intermediate-frequency filter and 2 biasing circuit shapes
Into the high linearity ultra wide band distribution frequency mixer of a complementary structure, the transistor symmetry arrangement of the frequency mixer, transistor
Grid be connected with radio-frequency transmission line, grounded drain；Two radio frequency signal transmission circuits utilize the grid of corresponding transistor
Parasitic capacitance structure artificial transmission line's transmitting radio frequency signal between pole and drain electrode, and radio-frequency transmission line I and radio-frequency transmission line II
The identical radiofrequency signal of simultaneous transmission.Due to the parasitic capacitance C between the grid of transistor and drain electrodegdMuch smaller than grid and source electrode
Between parasitic capacitance Cgs, therefore, can be realized using the method for this structure artificial transmission line and be mixed than traditional distribution
The broader bandwidth of device.Local oscillator artificial transmission line utilizes the parasitic capacitance structure between the source electrode of transistor and drain electrode, it is ensured that very
Wide local oscillator bandwidth.In addition, the transmission of radiofrequency signal is carried out using two radio-frequency transmission lines I and II, single angle from the linearity
For, it is equivalent in traditional distributed frequency mixer and is twice the size increasing of transistor, but radio frequency bandwidth but remains unchanged,
It finally ensure that on the premise of radio frequency bandwidth is not deteriorated, lift the linearity of frequency mixer.
In the present embodiment, input matching circuit is used for the first radio frequency signal transmission circuit and the second radio signal transmission electricity
Road provides radiofrequency signal, and a capacitance, one end and capacitance are included in the rf inputs of ultra wide band distribution mixer
The input matching network that the capacitance that the inductance of series connection, both ends are connected with inductance and ground respectively is formed, it is ensured that rf inputs have
Good matching.
【Embodiment 5】
The present embodiment provides a kind of particular circuit configurations of ultra wide band distribution frequency mixer, it is the ultra-wide in embodiment 4
Structure with distributed frequency mixer when n takes 2, when m takes 3.
As shown in figure 11, which includes：4 transistors M11, M12, M13, M14, are sequentially connected in series
Inductance L11、L12、L13, the inductance L that is sequentially connected in series21、L22、L23, the inductance L that is sequentially connected in series31、L32、L33, capacitance C3, capacitance C1、
Capacitance C4, capacitance C2, capacitance C5, capacitance C6, resistance R1, resistance R2, resistance RG1, resistance RG2And inductance L1.These devices constitute
The high linearity ultra wide band distribution frequency mixer of complementary structure, its specific connection mode are as follows：
Capacitance C1One end incoming radio frequency signal RF, other end connection inductance L1One end；Inductance L1The other end connection capacitance
C2One end, capacitance C2The other end ground connection；The inductance L1The other end connect inductance L at the same time11With inductance L31, while to first
Radio-frequency transmission line and the second radio-frequency transmission line export same radiofrequency signal.Capacitance C1, capacitance C2With inductance L1Form input matching
Circuit；
Inductance L11As the input terminal of the first radio-frequency transmission line, its one end passes through input matching circuit incoming radio frequency signal；
Inductance L31As the input terminal of the second radio-frequency transmission line, its one end input matching circuit incoming radio frequency signal；Inductance L21It is used as this
Shake the input terminal of transmission line, and its one end passes through capacitance C3Access local oscillation signal LO；
The grid connection inductance L of transistor M1111The other end and inductance L12One end, source electrode connection inductance L21It is another
End and inductance L22One end, grounded drain；The grid connection inductance L of transistor M1212The other end and inductance L13One end, source
Pole connection inductance L22The other end and inductance L23One end, grounded drain；The grid connection inductance L of transistor M3131It is another
End and inductance L32One end, source electrode connection inductance L21The other end and inductance L22One end, grounded drain；The grid of transistor M32
Pole connection inductance L32The other end and inductance L33One end, source electrode connection inductance L22The other end and inductance L23One end, drain electrode
Ground connection.Capacitance C5One end connection inductance L13The other end, the other end passes through resistance RG1Ground connection.Capacitance C6One end connection inductance L33's
The other end, the other end pass through resistance RG2Ground connection.Inductance L23The other end export intermediate-freuqncy signal IF after frequency mixer frequency conversion；
Capacitance C4For filter capacitor, for being filtered to the intermediate-freuqncy signal of output, its one end connection inductance L23It is another
End, other end ground connection；Resistance R1For the biasing resistor of local oscillator transmission line, its one end connection inductance L21One end, the other end access
Source voltage Vs.Resistance R2For the first radio-frequency transmission line and the biasing resistor of the second radio-frequency transmission line, its one end connection inductance L11
One end, other end access grid voltage Vg.
In the present embodiment, the grid of parasitic capacitance, transistor M12 between the grid of transistor M11 and drain electrode and drain electrode
Between parasitic capacitance and inductance L11、L12、L13Construct artificial transmission line's (radio-frequency transmission line I) of transmitting radio frequency signal；Crystal
Parasitic capacitance and inductance L between the grid of parasitic capacitance, transistor M32 between the grid of pipe M31 and drain electrode and drain electrode31、
L32、L33Construct the artificial transmission line (radio-frequency transmission line II) of transmitting radio frequency signal；Between the drain electrode of transistor M21 and source electrode
Parasitic capacitance and inductance L between parasitic capacitance, the drain electrode of transistor M22 and source electrode21、L22、L23Construct transmission local oscillation signal
Artificial transmission line's (local oscillator transmission line I).
Ultra wide band distribution frequency mixer in the present embodiment uses the enhanced pHEMT techniques of GaAs, its mixing unit number
Also it was 2 (in the same manner as in Example 3), it transmits symmetrical two transistors on local oscillator and forms a mixing unit.This implementation
The radio frequency of the ultra wide band distribution frequency mixer of example and the return loss of local oscillator port are as shown in figure 12, the ultra wide band point of the present embodiment
Change such as Figure 13 of cloth frequency mixer conversion loss radio frequency frequency in IF frequency=100MHz and local oscillation power=15dBm
It is shown；The ultra wide band distribution frequency mixer of the present embodiment is in rf frequency=20GHz, local frequency=19.9GHz and local oscillator work(
Conversion loss during rate=15dBm is as shown in figure 14 with the change of RF input power.Foregoing prevention at radio-frequency port is capacitance C1
One end of incoming radio frequency signal, local oscillator port are capacitance C3One end of incoming radio frequency signal；This external inductance L23The other end be
Frequency port, exports intermediate-freuqncy signal.
As shown in Figure 12, the radio frequency of the high linearity ultra wide band distribution frequency mixer using complementary structure in the present embodiment
With the return loss of local oscillator port 5dB is superior in DC to 50GHz frequency ranges；As shown in Figure 13, it is mutual in the present embodiment
The high linearity ultra wide band distribution mixer of structure is mended in IF frequency=100MHz and local oscillation power=15dBm,
Conversion loss is superior to 10dB in rf frequency in frequency range from 0.2GHz to 45GHz；As shown in Figure 14, in the present embodiment
Complementary structure high linearity ultra wide band distribution mixer, rf frequency=20GHz, local frequency=
Input 1-dB gain compressions power during 19.9GHz and local oscillation power=15dBm is 6dBm, than 3 high 5dBm (implementation cases of embodiment
The input 1-dB gain compressions power of the circuit of ultra-wideband frequency mixer in example 3 is 1dBm), and bandwidth and embodiment 3 almost phase
Together, that is, higher IP is realized1dB, bandwidth is not impacted, it is known that, compared with embodiment 3, although increasing in the present embodiment
Added transistor number and the size of mixer, but there is no any influence to its bandwidth, thus realize at the same time compared with
Wide bandwidth and higher IP1dBValue, solves bandwidth and IP1dBContradiction, improve the linearity.
Therefore, the high linearity ultra wide band distribution frequency mixer in the present embodiment is on the premise of keeping radio frequency bandwidth constant
Realize the linearity of higher.
In the present embodiment, capacitance C1, capacitance C3, capacitance C5, capacitance C6For capacitance, direct current signal buffer action is played.Electricity
Hold C3, capacitance C5, capacitance C6For ensureing transistor biasing in desired bias state.In order to make with the cascade of other circuit modules
With when, C1It is the bias state introducing of the transistor for the direct current signal influence frequency mixer that frequency mixer avoids other modular circuits
's.
It should be noted that in above-described embodiment, it is noted that technique used by mixer is implemented, but the application
It is not limited in above-mentioned technique, based on other techniques, including but not limited to based on GaAs pHEMT techniques, CMOS and BiCMOS,
The mixer realized using circuit structure unit disclosed by the invention equally falls within the guarantor of the application the appended claims
Protect scope.
Input matching circuit used in this application, biasing circuit, intermediate-frequency filter are being preferable to carry out for the application
Mode, these circuits can also use other implementations commonly used in the art to implement, be repeated no more in the present embodiment.
Above-described embodiment, has carried out the purpose of the present invention, technical solution and beneficial effect further
Describe in detail, it should be understood that the foregoing is merely the embodiment of the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution, improvement and etc. done, should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of ultra wide band distribution frequency mixer, including the first radio frequency signal transmission circuit and the local oscillator for being used for transmission local oscillation signal
Transmission line, first radio frequency signal transmission circuit include the first transistor group and are used for transmission the first radio frequency biography of radiofrequency signal
Defeated line, the first transistor group include n transistor, and n is the integer not less than 2, each transistor in the first transistor group
Grid connect the first radio-frequency transmission line, it is characterised in that in the first transistor group each transistor source electrode connection local oscillator biography
Defeated line, and grounded drain.
2. a kind of ultra wide band distribution frequency mixer according to claim 1, it is characterised in that further include capacitance C1And C3, institute
State local oscillation signal transmission line and pass through capacitance C3Coupling access local oscillation signal；First radio-frequency transmission line passes through capacitance C1Coupling connects
Enter radiofrequency signal.
3. a kind of ultra wide band distribution frequency mixer according to claim 1, it is characterised in that further include the second radiofrequency signal
Transmission circuit, second radio frequency signal transmission circuit is identical with the first radio frequency signal transmission circuit structure and the transmission of shared local oscillator
Line, the second radio frequency signal transmission circuit are symmetrical also on local oscillator transmission line with the first radio frequency signal transmission circuit；Described second penetrates
Frequency signal circuit includes second transistor group and is used for transmission the second radio-frequency transmission line of radiofrequency signal, second crystal
Pipe group includes n transistor, and the transistor in the second transistor group is different from the transistor in the first transistor group
Transistor；Source electrode connection local oscillator transmission line, grounded drain, the grid of each transistor connect the second radio frequency in second transistor group
Transmission line.
4. a kind of ultra wide band distribution frequency mixer according to claim 3, it is characterised in that in the second transistor group
Transistor it is identical with the transistor size in the first transistor group and arrangement is symmetrical on local oscillator transmission line.
5. a kind of ultra wide band distribution frequency mixer according to claim 3, it is characterised in that further include input matching electricity
Road, the input terminal incoming radio frequency signal of the input matching circuit, the output terminal of input matching circuit connect the first radio frequency at the same time
Transmission line and the second radio frequency signal transmission line, to the first radio-frequency transmission line and the first radio-frequency transmission line and the second radio signal transmission
Line exports radiofrequency signal.
A kind of 6. ultra wide band distribution frequency mixer according to claim 5, it is characterised in that the input matching circuit bag
Include capacitance C1, capacitance C2With inductance L1；Capacitance C1One end incoming radio frequency signal, other end connection inductance L1One end；Inductance L1's
Other end connection capacitance C2One end, capacitance C2The other end ground connection；The inductance L1The other end at the same time connect the first radio frequency transmission
Line and the second radio frequency signal transmission line, it is defeated to the first radio-frequency transmission line and the first radio-frequency transmission line and the second radio frequency signal transmission line
Go out radiofrequency signal.
7. according to a kind of any ultra wide band distribution frequency mixer of claim 3 to 6, it is characterised in that further include first
Biasing circuit and the second biasing circuit, first radio-frequency transmission line and the second radio-frequency transmission line also with the first biasing circuit phase
Even, the local oscillator transmission line is also connected with the second biasing circuit.
8. a kind of ultra wide band distribution frequency mixer according to any one of claims 1 to 6, it is characterised in that described first is inclined
Circuits include resistance R2, resistance R2One end connects the input terminal of the first radio-frequency transmission line and the second radio-frequency transmission line at the same time, another
Terminate into grid voltage Vg；Second biasing circuit includes resistance R1, resistance R1Source voltage Vs is accessed in one end, and the other end connects
Connect the input terminal of local oscillation signal.
A kind of 9. ultra wide band distribution frequency mixer according to any one of claims 1 to 6, it is characterised in that the local oscillator letter
Number transmission line output terminal be also associated with intermediate-frequency filter.
A kind of 10. ultra wide band distribution frequency mixer according to claim 9, it is characterised in that the intermediate-frequency filter bag
Include capacitance C4, capacitance C4One end connection local oscillation signal transmission line output terminal, other end ground connection.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112953411A (en) * | 2021-03-10 | 2021-06-11 | 西安博瑞集信电子科技有限公司 | Ultra-wideband power amplifier |
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