CN113746431B - Ultra-wideband high-linearity mixer with image rejection function - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/18—Modifications of frequency-changers for eliminating image frequencies
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses an ultra-wideband high linearity mixer with an image rejection function, which comprises an intermediate frequency transconductance stage, a local oscillation switching stage and a local oscillation switching stage, wherein the intermediate frequency transconductance stage is used for inputting an intermediate frequency differential signal, performing transconductance amplification and conversion to obtain a current signal, and entering the local oscillation switching stage for further mixing; the local oscillation switch stage is used for carrying out frequency mixing operation on the local oscillation differential signal and the intermediate frequency differential signal to form a radio frequency differential signal after frequency mixing; the radio frequency load stage is used for receiving the radio frequency differential signals after mixing and outputting the radio frequency differential signals to the radio frequency matching network to be converted into single-ended radio frequency signals and then outputting the single-ended radio frequency signals. The ultra-wideband high-linearity mixer topological structure with the image rejection function provided by the invention has the advantages that the intermediate frequency, the local oscillator and the radio frequency can cover a wider working frequency band, good balance is achieved among indexes such as linearity, gain flatness, isolation, power consumption, design cost and the like, the function of image rejection is realized, and the use requirement of a multi-standard transmitter is met.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to an ultra-wideband high-linearity mixer with an image rejection function.
Background
With the wide application of millimeter wave frequency bands in commercial markets, the demand for low-cost, high-integration transceiver systems is increasing. The data rates of modern wireless communications have grown exponentially, which has placed higher demands on the operating bandwidth of the communication system. The mixer is used as an important frequency conversion module in the millimeter wave receiving and transmitting system, plays a role in the operation of the whole system, and the indexes such as the working bandwidth, the gain, the linearity, the spurious suppression and the like of the mixer directly influence the working state of the receiving and transmitting system.
The design of the traditional broadband up-mixer mostly adopts a passive structure, has better working bandwidth and linearity, but has the problems of large frequency conversion loss, small port isolation and larger local oscillation working power. The active mixer can realize better gain and isolation, and the local oscillation power requirement is relatively smaller, but the working frequency and linearity are limited to a certain extent. If the intermediate frequency port, the local oscillator port and the radio frequency port are ensured to have wider working frequency bands, the gain and the linearity are still better, and the method is a difficult problem to be measured and solved.
In the up-mixer, the transmitted signal is frequency-converted to produce an upper sideband signal and a lower sideband signal, and the operating sidebands of the upper sideband signal need to be selected for use. For the problem of image rejection in the up-mixer, two solutions mainly exist, namely, an image rejection architecture is adopted, and a proper frequency selection mode is adopted. The former is almost suitable for various frequency band selection conditions for image signal suppression, but the disadvantage is that the complexity of the design of the up-mixing module is increased, and the design cost is also increased; the latter hardly increases the design costs, but limits the range of band selection to a large extent. What implementation is used needs to be further considered in connection with the actual situation.
Disclosure of Invention
The invention aims at overcoming the technical defects in the prior art and provides an ultra-wideband high-linearity mixer with an image rejection function.
The technical scheme adopted for realizing the purpose of the invention is as follows:
an ultra wideband high linearity mixer with image rejection, comprising:
an intermediate frequency transconductance stage for receiving the intermediate frequency differential signal, performing transconductance amplification to convert it into a current signal, and feeding it into a local oscillation switching stage for further mixing, and using a first transistor Q 1 And a second transistor Q 2 The first transistor Q 1 And a second transistor Q 2 The emitter electrode of the intermediate frequency matching network is grounded, and the base electrode of the intermediate frequency matching network is connected with the output end of the intermediate frequency matching network which converts the input intermediate frequency signal into a differential signal;
a local oscillation switch stage for performing frequency mixing operation on the local oscillation differential signal and the intermediate frequency differential signal to form a radio frequency differential signal after frequency mixing, and a third transistor Q 3 Fourth transistorQ 4 Fifth transistor Q 5 Sixth transistor Q 6 Constructing; third transistor Q 3 And a fourth transistor Q 4 Is connected with the first transistor Q 1 Collector connection, fifth transistor Q 5 And a sixth transistor Q 6 Is connected with the second transistor Q 2 Collector connection, third transistor Q 3 And a sixth transistor Q 6 A base electrode of the fourth transistor Q is connected with a first signal of a differential signal which is output by converting an input single-ended local oscillation signal through a local oscillation port matching network 5 And a fifth transistor Q 4 The base electrode of the single-ended local oscillation signal is connected with a second signal of the differential signal which is converted and output by the local oscillation port matching network;
the radio frequency load stage is used for receiving the mixed radio frequency differential signal, outputting the radio frequency differential signal to the radio frequency matching network, converting the radio frequency differential signal into a single-ended radio frequency signal, outputting the single-ended radio frequency signal, and outputting the single-ended radio frequency signal through the inductor L 9 Inductance L 10 Structure, inductance L 9 One end of (a) is connected with the third transistor Q 3 And a fifth transistor Q 5 The other end is connected with an input connecting end of the radio frequency matching network; inductance L 10 One end of (a) and a fourth transistor Q 4 And a sixth transistor Q 6 The other end is connected with the other input connection end of the radio frequency matching network.
As a preferred embodiment, the first transistor Q 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is connected to the substrate bias current.
As a preferred embodiment, the first transistor Q is characterized by 1 Second transistor Q 2 The emitter of the capacitor is respectively connected with an inductor and then grounded, the base is respectively connected with a capacitor in series to separate the intermediate frequency signal and the direct current bias current, one end of the capacitor connected with the intermediate frequency matching network in series is connected with the bias current of the base at the other end.
As a preferable technical proposal, the medium frequency matching network is characterized by comprising Marchand balun and an inductor L 1 Inductance L 2 Resistance R 1 Resistance R 2 The Marchand balun is used for converting a single-ended intermediate frequency input signal into a differential signal, and the inductor L 1 Inductance L 2 Resistance R 1 Resistance R 2 For adjusting the input impedance, inductance L, of the intermediate frequency transconductance stage 1 And resistance R 1 Series connection, inductance L 2 And resistance R 2 Series connection, inductance L 1 Inductance L 2 The other end is grounded, resistance R 1 Resistance R 2 The other ends are respectively connected with corresponding output ends of the Marchand balun so as to realize maximum power transmission.
As a preferable technical scheme, the local oscillator port matching network consists of a capacitor C 3 Capacitance C 4 Resistance R 1 Inductance L 7 Inductance L 8 A transformer, wherein the transformer is composed of an inductance L 5 Inductance L 6 Form, capacitance C 3 Connected in parallel with the inductance L 5 Input side, capacitance C 3 One end of the capacitor C is grounded, the other end of the capacitor C is grounded and is connected with the input single-ended local oscillator signal 4 Resistance R 1 Connected in parallel with the inductance L 6 And a capacitor C 4 At resistor R 1 And inductance L 6 Between, resistance R 1 Is connected with the inductor L at two sides 7 Inductance L 8 Is one end of the inductance L 7 Inductance L 8 The other end of the first signal and the second signal is used as an output end of the first signal and the second signal.
As a preferable technical scheme, the radio frequency matching network is composed of a resistor R 2 Capacitance C 5 Capacitance C 6 A transformer, wherein the transformer is composed of an inductance L 11 Inductance L 12 Structure, inductance L 11 With centre tap connection V DD Supplying power to the circuit; resistor R 2 Capacitance C 5 Connected in parallel with the inductance L 11 Input side and capacitance C 5 At resistor R 2 And inductance L 11 Between, capacitance C 6 Connected in parallel with the inductance L 12 Output side of (C), capacitance C 6 The other end is used as a single-ended radio frequency signal output end.
As a preferred techniqueIn an operation scheme, the bias circuit of the base-stage bias current is formed by a seventh transistor Q 7 Resistance R 3 Resistance R 4 Constructing; wherein the seventh transistor Q 7 Emitter-grounded collector-grounded resistor R 4 One end of the resistor R 4 Is connected with the other end of V DD Seventh transistor Q 7 Base-to-base resistor R 3 One end of the resistor R 3 Is connected with the other end of the seventh transistor Q 7 And serve as the collector of V bias An output end;
v of bias circuit bias Connected to the first transistor Q of the intermediate frequency transconductance stage 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 So that the first transistor Q 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is operated in an amplified state.
The mixer circuit topology provided by the invention adopts a method of combining an active mixer core and a passive ultra-wideband matching network, can realize ultra-wideband working bandwidth, and simultaneously realizes good balance among indexes such as gain, linearity, isolation, power consumption and the like.
According to the mixer circuit topology provided by the invention, the mixing core is designed based on the Gilbert cell, the transconductance stage selects the transistor with larger size, and the linearity of the whole mixing is improved by combining the emitter degeneration inductance.
The mixer circuit topology provided by the invention adopts the ultra-wideband matching network, so that the ultra-wideband working bandwidths of the intermediate frequency port, the local oscillator port and the radio frequency port can be realized, and the local oscillator port and the radio frequency port matching network have the filtering characteristic and can be used for filtering out-of-band signals better.
The mixer circuit topology provided by the invention realizes the suppression of the image signal by optimizing the frequency band selection mode, so that the area of chip design can be reduced to a certain extent, and the design cost is reduced.
The ultra-wideband high-linearity mixer topological structure with the image rejection function provided by the invention has the advantages that the intermediate frequency, the local oscillator and the radio frequency can cover a wider working frequency band, good balance is achieved among indexes such as linearity, gain flatness, isolation, power consumption, design cost and the like, the function of image rejection is realized, and the use requirement of a multi-standard transmitter is met.
Drawings
FIG. 1 is a schematic diagram of an ultra wideband high linearity mixer circuit topology with image rejection as proposed;
FIG. 2 is a schematic diagram of the proposed frequency selective mode of the mixer circuit based on image rejection;
FIG. 3 is a graph of reflection loss at an intermediate frequency port, local oscillator port, radio frequency port of an embodiment;
FIG. 4 is a graph showing simulation results of conversion gain with frequency of RF signals at different intermediate frequencies;
FIG. 5 is example P 1dB Simulation result graphs under different intermediate frequency and local oscillation frequency changes;
fig. 6 is a diagram of simulation results of the image suppression degree under different intermediate frequency local oscillation frequency changes according to the embodiment.
Detailed Description
The invention is described in further detail below with reference to the drawings and the specific examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Fig. 1 shows a novel ultra-wideband high linearity mixer topology structure with image rejection function provided by the embodiment of the present invention, the circuit topology structure includes: the device comprises an intermediate frequency transconductance stage, an intermediate frequency matching network, a local oscillation switching stage, a local oscillation matching network, a radio frequency load stage and a radio frequency matching network.
The intermediate frequency transconductance stage, the local oscillation switch stage and the radio frequency load stage form a frequency mixing core together and are used for carrying out up-mixing on an input intermediate frequency signal and a local oscillation signal, and the three matching networks are designed to be used for converting a single-ended signal and a differential signal on one hand and realizing impedance matching under an ultra-wideband so as to realize maximum power transmission of the signal on the other hand.
Wherein the intermediate frequency transconductance stage is formed by a first transistor Q 1 And a second transistor Q 2 Is composed of a first transistor Q 1 And a second transistor Q 2 The base groups of the pair are respectively connected with a blocking capacitor C in series 1 And a blocking capacitor C 2 For separating the intermediate frequency signal IF from the DC bias, a first transistor Q 1 And a second transistor Q 2 Is based on the basic level bias of the circuit topology N 4 ，N 4 Comprises a resistor R 2 Resistance R 4 And transistor Q 7 The bias current is changed by adjusting the size and the resistance of the transistor, so that the first transistor Q 1 And a second transistor Q 2 The dc can be biased to operate in an amplified state. First transistor Q 1 And a second transistor Q 2 The emitter groups of (1) are respectively connected with an inductor L 3 And inductance L 4 The parasitic capacitance of the transistor is reduced, the linearity of the circuit is improved, and the inductance value is not excessively selected, otherwise, the overall gain of the circuit is affected. The input intermediate frequency signal is converted into a current signal through transconductance amplification and enters a local oscillation switching stage to be used for further mixing.
The intermediate frequency transconductance stage input matching network comprises a Marchand balun and a resistor R 1 Resistance R 2 Inductance L 1 Inductance L 2 The input intermediate frequency signals are converted into differential signals via Marchand balun, and then respectively connected to the first transistors Q 1 And a second transistor Q 2 Is amplified differentially via the transconductance stage and enters the switching stage for further mixing; inductance L 1 Inductance L 2 Resistance R 1 Resistance R 2 For adjusting the input impedance of the intermediate frequency transconductance stage to around 50 ohms and then connecting to a Marchand balun for maximum power transfer.
The local oscillation switching stage is formed by a third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 The basic level bias of the transistor adopts a circuit topology N 4 ，N 4 Comprises a resistor R 2 Resistance R 4 And transistor Q 7 V of bias circuit bias Is connected to a thirdTransistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 By adjusting the size of the transistor and the resistance to change the bias current, thereby making the third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 The dc can be biased to operate in an amplified state. Local oscillation differential signal via third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 The base stage of (2) enters a switching stage and is subjected to mixing operation with an intermediate frequency signal, and the mixed radio frequency signal passes through a third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is output to the load stage.
Matching network N of local oscillator port 2 Comprising a capacitor C 3 Transformer, capacitor C 4 Inductance L 7 Inductance L 8 The transformer consists of an inductance L 5 And inductance L 6 Form, match network N 2 The method is mainly used for converting a local oscillator single-ended input signal into a differential signal; the input single-ended local oscillation signal LO is converted into a differential signal through the matching network, and a third transistor Q 3 And a sixth transistor Q 6 Connected to the in-phase signal Vlo, the fourth transistor Q 4 And a fifth transistor Q 5 Another in-phase signal Vlo is connected. Intermediate frequency differential signal via third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 The emitter of the (B) enters a local oscillation switch stage and mixes with the local oscillation signal of the base stage, and the mixed radio frequency signal passes through a third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is provided.
The radio frequency load stage comprises an inductance L 9 Inductance L 10 From the third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 The radio frequency signal output by the collector of (a) is transmitted through the inductor L 9 Inductance L 10 Entering into matching network N 3 . Matching network N 3 Comprising a resistor R 2 Capacitance C 5 Transformer, capacitor C 6 Wherein the transformer is composed of an inductor L 11 And inductance L 12 Form, match network N 3 The method is mainly used for converting the radio frequency differential output signal into a single-ended signal. Inductance L 11 With a centre tap connected to VDD for powering the circuit, the output radio frequency differential signal being passed through the matching network N 3 Converted into a single-ended signal RF for output.
In the scheme, the whole circuit topology is designed based on the Gilbert cell, and the whole circuit topology adopts an active architecture and has good gain and isolation.
In the above scheme, the local oscillator port matching network N 2 And radio frequency port matching network N 3 In order to be based on the multi-order matching network of the transformer, the related inductance, capacitance and resistance are adjusted and optimized by combining the input and output impedance of the local oscillator input port and the radio frequency input port when in use, so as to achieve the design of the required working frequency band. In addition, the whole matching result of the multi-order matching network based on the transformer presents the band-pass characteristic, and out-of-band spurious emissions can be effectively restrained. Intermediate frequency port matching network N 1 The matching network is a matching network based on Marchand balun, and is suitable for the design of an ultra-wideband intermediate frequency matching network.
In the above scheme, the overall linearity of the mixer depends on the intermediate frequency transconductance stage first transistor Q 1 Second transistor Q 2 The larger the tube size, the higher the linearity of the mixer, but the circuit power consumption will also increase, and the design will need to be adjusted according to the actual requirements. Intermediate frequency transconductance stage first transistor Q 1 Second transistor Q 2 The emitter groups of (1) are respectively connected with an inductor L 3 Inductance L 4 The method is used for reducing parasitic capacitance of the transistor and improving linearity of the circuit.
In the above scheme, in order to realize the function of image rejection, the working frequency bands of the intermediate frequency, the local oscillator and the radio frequency are required to be properly selected, firstly, the working frequency bands of the three ports are required to be ensured not to overlap, secondly, the selection of the intermediate frequency working frequency is required to be not too small, otherwise, the design of the radio frequency matching network is possibly difficult, and excellent degradation characteristic is required to realize the selection of the sideband signal.
In the above scheme, the transistor Q can be realized in a BiCMOS process 1 To Q 7 Is an NPN bipolar junction transistor. The structure is also applicable to NMOS transistors, and the emitter, the base and the collector are changed into source, grid and drain respectively.
Fig. 2 shows a three-port operating band selection principle provided by an embodiment of the present invention, so as to implement an image rejection function. In order to realize a better image signal suppression effect based on the circuit topology, the selection principle is as follows:
1. the intermediate frequency band, the local oscillation band and the radio frequency band are not overlapped in principle;
2. the radio frequency working band is selected to only contain one sideband after mixing in principle, and not contain a local oscillator sideband and an image sideband;
3. the intermediate frequency is not selected too low to facilitate the design of the rf matching network.
FIG. 3 shows reflection losses of an intermediate frequency port, a local oscillation port and a radio frequency port obtained by circuit simulation in the embodiment of the invention, wherein the reflection loss of the intermediate frequency port is less than-10 dB in 6-17.5GHz, the reflection loss of the local oscillation port is less than-8.5 dB in 16-24GHz, and the reflection loss of the radio frequency port is less than-5 dB in 24-31 GHz.
FIG. 4 shows the simulated variable frequency gain of the circuit in the embodiment of the invention, wherein the intermediate frequency range is 3-11GHz, the radio frequency range is 24-31GHz, the overall gain is greater than-7 dB, and the in-band gain fluctuation is less than 1dB.
FIG. 5 shows an OP of a circuit simulation of an embodiment of the present invention 1dB The intermediate frequency range is 3-11GHz, the radio frequency range is 24-30GHz, the whole is larger than-1.2 dBm, and the maximum is 1.1dBm.
FIG. 6 shows the image rejection ratio of the circuit simulation of the embodiment of the invention, wherein the intermediate frequency range is 3-11GHz, the radio frequency range is 24-30GHz, and the image rejection ratio can reach 32dB.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (7)
1. Ultra-wideband high linearity mixer with image rejection function, characterized in that it comprises:
an intermediate frequency transconductance stage for receiving the intermediate frequency differential signal, performing transconductance amplification to convert it into a current signal, and feeding it into a local oscillation switching stage for further mixing, and using a first transistor Q 1 And a second transistor Q 2 The first transistor Q 1 And a second transistor Q 2 The emitter electrode of the intermediate frequency matching network is grounded, and the base electrode of the intermediate frequency matching network is connected with the output end of the intermediate frequency matching network which converts the input intermediate frequency signal into a differential signal;
a local oscillation switch stage for performing frequency mixing operation on the local oscillation differential signal and the intermediate frequency differential signal to form a radio frequency differential signal after frequency mixing, and a third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Constructing; third transistor Q 3 And a fourth transistor Q 4 Is connected with the first transistor Q 1 Collector connection, fifth transistor Q 5 And a sixth transistor Q 6 Is connected with the second transistor Q 2 Collector connection, third transistor Q 3 And a sixth transistor Q 6 A base electrode of the fourth transistor Q is connected with a first signal of a differential signal which is output by converting an input single-ended local oscillation signal through a local oscillation port matching network 5 And a fifth transistor Q 4 The base electrode of the single-ended local oscillation signal is connected with a second signal of the differential signal which is converted and output by the local oscillation port matching network;
the radio frequency load stage is used for receiving the mixed radio frequency differential signal, outputting the radio frequency differential signal to the radio frequency matching network, converting the radio frequency differential signal into a single-ended radio frequency signal, outputting the single-ended radio frequency signal, and outputting the single-ended radio frequency signal through the inductor L 9 Inductance L 10 Structure, inductance L 9 One end of (a) is connected with the third transistor Q 3 And a fifth transistor Q 5 And the other end is connected with one end of the radio frequency matching networkAn input connection; inductance L 10 One end of (a) and a fourth transistor Q 4 And a sixth transistor Q 6 The other end is connected with the other input connection end of the radio frequency matching network.
2. The ultra wideband high linearity mixer with image rejection function according to claim 1, wherein the first transistor Q 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is connected to the substrate bias current.
3. Ultra wideband high linearity mixer with image rejection function according to claim 2, wherein the first transistor Q 1 Second transistor Q 2 The emitter of the capacitor is respectively connected with an inductor and then grounded, the base is respectively connected with a capacitor in series to separate the intermediate frequency signal and the direct current bias current, one end of the capacitor connected with the intermediate frequency matching network in series is connected with the bias current of the base at the other end.
4. The ultra-wideband high linearity mixer with image rejection function according to claim 1, wherein said intermediate frequency matching network is composed of Marchand balun, inductance L 1 Inductance L 2 Resistance R 1 Resistance R 2 The Marchand balun is used for converting a single-ended intermediate frequency input signal into a differential signal, and the inductor L 1 Inductance L 2 Resistance R 1 Resistance R 2 For adjusting the input impedance, inductance L, of the intermediate frequency transconductance stage 1 And resistance R 1 Series connection, inductance L 2 And resistance R 2 Series connection, inductance L 1 Inductance L 2 The other end is grounded, resistance R 1 Resistance R 2 The other ends are respectively connected with corresponding output ends of the Marchand balun so as to realize maximum power transmission.
5. Ultra wideband high linearity mixer with image rejection function according to claim 1The local oscillator port matching network is characterized by comprising a capacitor C 3 Capacitance C 4 Resistance R 1 Inductance L 7 Inductance L 8 A transformer, wherein the transformer is composed of an inductance L 5 Inductance L 6 Form, capacitance C 3 Connected in parallel with the inductance L 5 Input side, capacitance C 3 One end of the capacitor C is grounded, the other end of the capacitor C is grounded and is connected with the input single-ended local oscillator signal 4 Resistance R 1 Connected in parallel with the inductance L 6 And a capacitor C 4 At resistor R 1 And inductance L 6 Between, resistance R 1 Is connected with the inductor L at two sides 7 Inductance L 8 Is one end of the inductance L 7 Inductance L 8 The other end of the first signal and the second signal is used as an output end of the first signal and the second signal.
6. The ultra-wideband high linearity mixer with image rejection function according to claim 1, wherein said radio frequency matching network is formed by a resistor R 2 Capacitance C 5 Capacitance C 6 A transformer, wherein the transformer is composed of an inductance L 11 Inductance L 12 Structure, inductance L 11 With centre tap connection V DD Supplying power to the circuit; resistor R 2 Capacitance C 5 Connected in parallel with the inductance L 11 Input side and capacitance C 5 At resistor R 2 And inductance L 11 Between, capacitance C 6 Connected in parallel with the inductance L 12 Output side of (C), capacitance C 6 The other end is used as a single-ended radio frequency signal output end.
7. The ultra wideband high linearity mixer with image reject function of claim 1, wherein the bias circuit for the base bias current is formed by a seventh transistor Q 7 Resistance R 3 Resistance R 4 Constructing; wherein the seventh transistor Q 7 Emitter-grounded collector-grounded resistor R 4 One end of the resistor R 4 Is connected with the other end of V DD Seventh transistor Q 7 Base-to-base resistor R 3 One end of the resistor R 3 Is connected with the other end of the seventh transistor Q 7 And serve as the collector of V bias An output end;
v of bias circuit bias Connected to the first transistor Q of the intermediate frequency transconductance stage 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 So that the first transistor Q 1 Second transistor Q 2 Third transistor Q 3 Fourth transistor Q 4 Fifth transistor Q 5 Sixth transistor Q 6 Is operated in an amplified state.
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| CN201910768U (en) * | 2011-01-11 | 2011-07-27 | 东南大学 | High-linearity foldable image mixer |
| CN104467686A (en) * | 2014-12-04 | 2015-03-25 | 锐迪科微电子科技（上海）有限公司 | Low-power-consumption and low-noise frequency mixer |
| CN204290882U (en) * | 2014-12-15 | 2015-04-22 | 北京爱洁隆技术有限公司 | The down-conversion active mixer of a kind of S-band high linearity, low noise and low gain |
| CN106301228A (en) * | 2016-08-03 | 2017-01-04 | 东南大学 | A kind of current multiplication type Self-bias Current multiplexing passive frequency mixer |
| CN107911092A (en) * | 2017-10-10 | 2018-04-13 | 天津大学 | A kind of radio-frequency emission front-end circuit of broadband high linearity |
| CN109714005A (en) * | 2018-12-25 | 2019-05-03 | 电子科技大学 | A kind of restructural double frequency-band frequency mixer |
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| CN113746431A (en) | 2021-12-03 |
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