CN104467686A - Low-power-consumption and low-noise frequency mixer - Google Patents
Low-power-consumption and low-noise frequency mixer Download PDFInfo
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- CN104467686A CN104467686A CN201410735942.4A CN201410735942A CN104467686A CN 104467686 A CN104467686 A CN 104467686A CN 201410735942 A CN201410735942 A CN 201410735942A CN 104467686 A CN104467686 A CN 104467686A
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Abstract
The invention discloses a low-power-consumption and low-noise frequency mixer. The low-power-consumption and low-noise frequency mixer comprises a transconductance level circuit, a switch level circuit, a load level circuit and a dynamic current source. In the transconductance level circuit, the second end of a first capacitor is connected with a common source of two NMOS transistors of a first difference switch pair and is grounded through a third resistor; the second end of a second capacitor is connected with a common source of two NMOS transistors of a second difference switch pair and grounded through a fourth resistor. In the dynamic current source, the source of a first PMOS transistor is connected with the grid of a second PMOS transistor and the common source of the two NMOS transistors of the first difference switch pair; the source of the second PMOS transistor is connected with the grid of the first PMOS transistor and the common source of the two NMOS transistors of the second difference switch pair. According to the low-power-consumption and low-noise frequency mixer, by omitting the NMOS transistors in the transconductance level circuit and newly adding the dynamic current source, the overall power consumption and the static power consumption of the circuits can be lowered, and the flicking noise of the circuits can be reduced.
Description
Technical field
The application relates to the frequency mixer in a kind of wireless transceiver system.
Background technology
Radio frequency (radio frequency, RF) refers to the electromagnetic wave of frequency range between 300KHz ~ 30GHz.Radio communication is widely applied in broadcast communication, mobile communication, microwave communication, satellite communication, WLAN (wireless local area network) access, Digital Television etc.Typical radio-frequency (RF) communication system comprises transmitter and receiver two parts.
Radio-frequency transmitter has three basic structures: superhet (super heterodyne) structure, Direct Conversion (directconversion) structure, Low Medium Frequency (low IF) structure.
Refer to Fig. 1 a, this is the basic structure of superheterodyne receiver, and its Typical Representative is digital if receiver.The radiofrequency signal that antenna receives is first through radio frequency band filter (BPF, Band-Pass Filter) carry out the out-of-band interference of filtering, then low noise amplifier (LNA, Low Noise Amplifier) small-signal received is amplified under introducing is compared with the condition of low noise, following image-reject filter (IRF, Image-Reject Filter) filtering Image interference frequency.First frequency mixer (Mixer1) is by filtered signal and the first local oscillation signal (LO1, wherein LO represents local oscillator, local oscillator) carry out mixing, signal is moved intermediate frequency (IF, Intermediate Frequency) from radio frequency.Then this intermediate-freuqncy signal carries out channel filtering by an if bandpas filter, then carries out intermediate frequency amplification by automatic gain amplifier (VGA, Variable Gain Amplifiers).The intermediate-freuqncy signal exported is divided into I, Q two-way, and I road signal is the intermediate-freuqncy signal of homophase (in-phase), and Q road signal is the intermediate-freuqncy signal of orthogonal (quadrature), and namely Q road signal is formed by I road signal phase shift 90 degree.I, Q two-way intermediate-freuqncy signal is respectively through two independently the second frequency mixers (Mixer2), I road intermediate-freuqncy signal down-converts to I roadbed band signal with (LO2) mixing of the second local oscillation signal in the second frequency mixer, and Q road intermediate-freuqncy signal down-converts to Q roadbed band signal with the second local oscillation signal mixing of phase shift 90 degree in another second frequency mixer.I, Q two-way baseband signal exports afterwards respectively through low pass filter (LPF, Low Pass Filter) again, transfers to subsequent treatment.Typical subsequent treatment comprises transfers to two analog to digital converters to be converted to digital signal I, Q two-way baseband signal respectively, then transfers to a digital signal processor (DSP) to carry out demodulation process.
Refer to Fig. 1 b, this is the basic structure of Direct Conversion Receiver, and its Typical Representative is zero intermediate frequency reciver.First the radiofrequency signal that antenna receives carrys out the out-of-band interference of filtering through radio frequency band filter, and then the small-signal received is amplified by low noise amplifier under introducing is compared with the condition of low noise.The radiofrequency signal exported is divided into I, Q two-way, and I road signal is the radiofrequency signal of homophase, and Q road signal is orthogonal radiofrequency signal, and namely Q road signal is formed by I road signal phase shift 90 degree.I, Q two-way radiofrequency signal is respectively through two independently frequency mixers, I road radiofrequency signal down-converts to I roadbed band signal with local oscillation signal mixing in frequency mixer, and Q road radiofrequency signal down-converts to Q roadbed band signal with the local oscillation signal mixing of phase shift 90 degree in another frequency mixer.I, Q two-way baseband signal exports respectively through after low pass filter, automatic gain amplifier again, transfers to subsequent treatment.
Refer to Fig. 1 c, this is the basic structure of low intermediate frequency receiver.First the radiofrequency signal that antenna receives carrys out the out-of-band interference of filtering through radio frequency band filter, and then the small-signal received is amplified by low noise amplifier under introducing is compared with the condition of low noise.The radiofrequency signal exported is divided into I, Q two-way, and I road signal is the radiofrequency signal of homophase, and Q road signal is orthogonal radiofrequency signal, and namely Q road signal is formed by I road signal phase shift 90 degree.I, Q two-way radiofrequency signal is respectively through two independently the first frequency mixers, I road radiofrequency signal down-converts to I road low intermediate frequency signal with the first local oscillation signal mixing in the first frequency mixer, and Q road radiofrequency signal down-converts to Q road low intermediate frequency signal with the first local oscillation signal mixing of phase shift 90 degree in another first frequency mixer.I, Q two-way low intermediate frequency signal exports respectively through after low pass filter, automatic gain amplifier again, respectively through two independently the second frequency mixer down-convert to I, Q two-way baseband signal, then transfer to subsequent treatment.
As can be seen here, down-conversion mixer is all absolutely necessary in various types of radio-frequency transmitter.Down-conversion mixer is used for radiofrequency signal to down-convert to intermediate-freuqncy signal, or radiofrequency signal is down-converted to baseband signal, or intermediate-freuqncy signal is down-converted to baseband signal.
Refer to Fig. 2, frequency mixer (mixer) is a kind of electronic device of three ports, comprises input port IN, local oscillator port LO and output port OUT.Frequency mixer is used for realizing the frequency spectrum shift of signal, time domain shows as input signal and is multiplied with local oscillation signal, frequency domain shows as addition and the subtraction of frequency input signal and local oscillation signal frequency.Suppose that input signal is V
iN=Acos (ω
iNt), local oscillation signal is V
lO=Bcos (ω
lOt), output signal as V
oUT, then frequency mixer realizes the Mathematical Modeling of frequency spectrum shift and is
This represents output signal V
oUTin containing two frequency component ω
iN-ω
lO, ω
iN+ ω
lO, one of them frequency component can be filtered out by filter, and select output signal V
oUTfrequency.If output signal V
oUTfrequency higher than input signal V
iNfrequency, namely output signal V
oUTretain ω
iN+ ω
lOfrequency component, be then called up-conversion mixer.If output signal V
oUTfrequency lower than input signal V
iNfrequency, namely output signal V
oUTretain ω
iN-ω
lOfrequency component, be then called down-conversion mixer.
Instantly increasingly extensive with the application of mobile phone, the panel computer intelligent terminal that is representative, these intelligent terminals are built-in with radio-frequency transmitter usually.Under day by day universal mobile Internet applied environment, usually require that radio frequency reception is confidential and often open, this just requires that the power consumption of radio-frequency transmitter is more low better.Down-conversion mixer is the important component part of radio-frequency transmitter, and how to reduce its power consumption is the problem that industry is inquired into always.
Noise factor (NF, noise figure) is used for describing the degree that input signal signal quality after frequency mixer degenerates, and represents with the ratio of input signal-to-noise ratio and output signal-to-noise ratio.Noise factor determines the sensitivity of receiver, and affects the dynamic range of receiver.The noise how reducing down-conversion mixer is also the problem that industry is inquired into.
Refer to Fig. 3, this is a kind of principle schematic of existing Gilbert frequency mixer.This Gilbert frequency mixer comprises transconductance stage circuit, switching stage circuit and load stage circuit.Described transconductance stage circuit is made up of two nmos pass transistors N1, N2, and their grid receives the voltage signal V of a pair Differential Input
rF+, V
rF-, two pairs of differential switch pair in their drain electrode difference connecting valve level circuit.Described switching stage circuit is by two pairs of differential switch to formed, and first pair of differential switch formed nmos pass transistor N3, the N4 by common source, and second pair of differential switch formed nmos pass transistor N5, the N6 by common source.The common source of two nmos pass transistors of every a pair differential switch centering connects the drain electrode of a nmos pass transistor in transconductance stage circuit, and the grid of two nmos pass transistors of every a pair differential switch centering receives the local oscillation signal V of a pair Differential Input respectively
lO+, V
lO-.Described load stage circuit is by two load resistance R
1, R
2form, each load resistance all connects operating voltage V
ddwith switching stage circuit.First differential switch centering is by local oscillation signal V
lO+the drain electrode of nmos pass transistor three N3 of excitation and the second differential switch centering are by local oscillation signal V
lO-the drain electrode of nmos pass transistor five N5 of excitation connects load resistance one R jointly
1.First differential switch centering is by local oscillation signal V
lO-the drain electrode of nmos pass transistor four N4 of excitation and the second differential switch centering are by local oscillation signal V
lO+the drain electrode of nmos pass transistor six N6 of excitation connects load resistance two R jointly
2.
The operation principle of the Gilbert frequency mixer shown in Fig. 3 is: the voltage signal of input is converted to current signal by transconductance stage circuit, sends into switching stage circuit.Switching stage circuit is encouraged by the local oscillation signal of a pair difference, can be regarded as the switch of conducting in turn, and the electric current produced transconductance stage circuit is carried out periodic switch modulation by them, realizes mixing function.Current signal after mixing is converted to voltage signal by load stage circuit.This Gilbert frequency mixer all has nmos pass transistor in the transconductance stage circuit and switching stage circuit of cascade, in order to meet the bias voltage of all nmos pass transistors, certainly will require operating voltage V
ddhigher, this just causes higher power consumption.In order to ensure that the nmos pass transistor in transconductance stage circuit is operated in saturation region, must apply higher DC bias current to it, this just result in higher noise.
Refer to Fig. 4, this is the principle schematic of another kind of existing Gilbert frequency mixer.Compared with Fig. 3, Fig. 4 only adds two current source I at load stage circuit
1, I
2.Each current source all connects operating voltage V
ddwith the common source of two nmos pass transistors of a pair differential switch centering every in switching stage circuit.This Gilbert frequency mixer is identical with Fig. 3 in power consumption.This Gilbert frequency mixer meets the DC bias current of the nmos pass transistor in transconductance stage circuit by newly-increased current source, thus decreases the direct current of the nmos pass transistor flow through in load resistance and switching stage circuit, reduces current noise.
Summary of the invention
Technical problems to be solved in this application are to provide a kind of frequency mixer, have low in energy consumption, that noise is low feature.
For solving the problems of the technologies described above, the frequency mixer of the application's low-power consumption, low noise, comprises transconductance stage circuit, switching stage circuit, load stage circuit and dynamic current source; Described switching stage circuit by two pairs of differential switch to formed; The first pair of differential switch formed by the nmos pass transistor three of common source, nmos pass transistor four, and the second pair of differential switch formed by the nmos pass transistor five of common source, nmos pass transistor six; The grid of two nmos pass transistors of every a pair differential switch centering receives the local oscillation signal of a pair Differential Input respectively;
Described transconductance stage circuit comprises electric capacity one, electric capacity two, resistance three, resistance four; The first end of electric capacity one, the first end of electric capacity two receive the voltage signal of a pair Differential Input respectively, the common source of two nmos pass transistors that the first pair of differential switch is right in the second end connecting valve level circuit of electric capacity one, and by resistance three ground connection; The common source of two nmos pass transistors that the second pair of differential switch is right in second end connecting valve level circuit of electric capacity two, and by resistance four ground connection;
Described load stage circuit is made up of load resistance one, load resistance two, resistance five, electric capacity four; Each load resistance all connects operating voltage and switching stage circuit; Resistance five and electric capacity four are all connected the common drain of two PMOS transistor in operating voltage and dynamic current source;
Described dynamic current source is made up of the PMOS transistor one of common drain and PMOS transistor two; The source electrode of PMOS transistor one to connect in the grid of PMOS transistor two and switching stage circuit the common source of two right nmos pass transistors of the first pair of differential switch; The source electrode of PMOS transistor two to connect in the grid of PMOS transistor one and switching stage circuit the common source of two right nmos pass transistors of the second pair of differential switch.
The application by omitting nmos pass transistor in transconductance stage circuit, and newly-increased dynamic current source, can reduce overall power and the quiescent dissipation of circuit, also can reduce the flicker noise of circuit.
Accompanying drawing explanation
Fig. 1 a ~ Fig. 1 c is the dissimilar basic structure schematic diagrames of three kinds of radio-frequency transmitter;
Fig. 2 is the schematic symbol diagram of frequency mixer;
Fig. 3, Fig. 4 are the basic structure schematic diagrames of two kinds of existing Gilbert frequency mixers;
Fig. 5 is the basic structure schematic diagram of the Gilbert frequency mixer of the application.
Description of reference numerals in figure:
Represent natural number with x, Nx is nmos pass transistor; Px is PMOS transistor; Cx is electric capacity; Rx is resistance.
Embodiment
Refer to Fig. 5, this is the principle schematic of the Gilbert frequency mixer of the application.This Gilbert frequency mixer comprises transconductance stage circuit, switching stage circuit, load stage circuit and dynamic current source.
Described transconductance stage circuit is by three electric capacity C
1, C
2, C
3with two resistance R
3, R
4form.Electric capacity one C
1first end, electric capacity two C
2first end receive the voltage signal V of a pair Differential Input respectively
rF+, V
rF-, electric capacity one C
1the second end and electric capacity two C
2the second end between be connected with electric capacity three C
3.Electric capacity one C
1the second end also common source of two nmos pass transistors N3, N4 that the first pair of differential switch is right in connecting valve level circuit, and by resistance three R
3ground connection.Electric capacity two C
2the second end also common source of two nmos pass transistors N5, N6 that the second pair of differential switch is right in connecting valve level circuit, and by resistance four R
4ground connection.
Described switching stage circuit is by two pairs of differential switch to formed, and first pair of differential switch formed nmos pass transistor N3, the N4 by common source, and second pair of differential switch formed nmos pass transistor N5, the N6 by common source.The grid of two nmos pass transistors of every a pair differential switch centering receives the local oscillation signal V of a pair Differential Input respectively
lO+, V
lO-.The common source of two nmos pass transistors N3, N4 that the first pair of differential switch is right connects electric capacity one C in transconductance stage circuit
1the second end.The common source of two nmos pass transistors N5, N6 that the second pair of differential switch is right connects electric capacity two C in transconductance stage circuit
2the second end.
Described load stage circuit is by two load resistance R
1and R
2, resistance five R
5, electric capacity four C
4form.Each load resistance all connects operating voltage V
ddwith switching stage circuit.First differential switch centering is by local oscillation signal V
lO+the drain electrode of nmos pass transistor three N3 of excitation and the second differential switch centering are by local oscillation signal V
lO-the drain electrode of nmos pass transistor five N5 of excitation all connects load resistance one R
1.First differential switch centering is by local oscillation signal V
lO-the drain electrode of nmos pass transistor four N4 of excitation and the second differential switch centering are by local oscillation signal V
lO+the drain electrode of nmos pass transistor six N6 of excitation all connects load resistance two R
2.Resistance five R
5with electric capacity four C
4all connect operating voltage V
ddwith the common drain of two PMOS transistor in dynamic current source.
Described dynamic current source is made up of the PMOS transistor P1 of two common drains and P2.The source electrode of PMOS transistor one P1 connects the grid of PMOS transistor two P2, to go back in connecting valve level circuit the common source of the first pair of differential switch right two nmos pass transistors N3, N4.The source electrode of PMOS transistor two P2 connects the grid of PMOS transistor one P1, to go back in connecting valve level circuit the common source of the second pair of differential switch right two nmos pass transistors N5, N6.
The operation principle of the Gilbert frequency mixer shown in Fig. 5 is: the voltage signal of input is converted to current signal by transconductance stage circuit, sends into the source electrode of each nmos pass transistor in switching stage circuit.Switching stage circuit is encouraged by the local oscillation signal of a pair difference, can be regarded as the switch of conducting in turn, and the electric current produced transconductance stage circuit is carried out periodic switch modulation by them, realizes mixing function.Current signal after mixing is converted to voltage signal by load stage circuit.
Compared with the existing two kinds of Gilbert frequency mixers shown in Fig. 3, Fig. 4, the application has following features:
One, the application only has nmos pass transistor in switching stage circuit, by choosing suitable resistance three R
3, resistance four R
4, resistance five R
5resistance, can operating voltage V be made
ddlower, thus reduce the overall power of circuit.
Its two, as the voltage signal V of a pair Differential Input
rF+and V
rF-, a pair Differential Input local oscillation signal V
lO+and V
lO-all when zero point, quiescent current is very little, therefore resistance three R
3with resistance four R
4the pressure drop produced is very little, and the quiescent dissipation of circuit is less than the circuit structure of Fig. 3 or Fig. 4.
Its three, transconductance stage circuit no longer adopts nmos pass transistor, and replaces with electric capacity and resistance completely, thus reduces flicker noise (flicker noise).Resistance three R
3be the equal of the current source that in switching stage circuit, first pair of differential switch is right, resistance four R
4it is the equal of the current source that in switching stage circuit, second pair of differential switch is right.
Its four, increased the dynamic current source be made up of the PMOS transistor P1 of two common drains, P2 newly.Although Fig. 4 reduces the noise current of each nmos pass transistor in switching stage circuit, be exaggerated the electric current white noise of each nmos pass transistor in transconductance stage circuit.The form that the application adopts dynamic current to inject eliminates this shortcoming, only in switching stage circuit, each nmos pass transistor just has pulse current injectingt when opening, and therefore the application conducts the circuit structure of the flicker noise caused much smaller than Fig. 3 or Fig. 4 because of quiescent current.
Its five, emulation experiment shows, under same gain, the linearity three rank of the application input intermodulation (IIP3, InputThird-order Intercept Point) are substantially constant with the circuit configuration of Fig. 3, are better than the circuit structure of Fig. 4.
If the Gilbert frequency mixer of the application is used as down-conversion mixer, goes for super-heterodyne architecture, Direct Conversion structure or low intermediate frequency structure, be specially adapted to the zero intermediate frequency reciver of Direct Conversion structure.
Gilbert frequency mixer shown in Fig. 5 also can have some distortion.Such as, electric capacity three C
3can omit.Electric capacity three C
3be used for improving common-mode voltage rejection ratio, no longer have that effect after omission.And for example, resistance three R
3, resistance four R
4all nmos pass transistor can be replaced with.For another example, resistance five R
5current source can be replaced with.
These are only the preferred embodiment of the application, and be not used in restriction the application.For a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (5)
1. a frequency mixer for low-power consumption, low noise, comprises transconductance stage circuit, switching stage circuit, load stage circuit; Described switching stage circuit by two pairs of differential switch to formed; The first pair of differential switch formed by the nmos pass transistor three of common source, nmos pass transistor four, and the second pair of differential switch formed by the nmos pass transistor five of common source, nmos pass transistor six; The grid of two nmos pass transistors of every a pair differential switch centering receives the local oscillation signal of a pair Differential Input respectively;
It is characterized in that, described frequency mixer also comprises dynamic current source;
Described transconductance stage circuit comprises electric capacity one, electric capacity two, resistance three, resistance four; The first end of electric capacity one, the first end of electric capacity two receive the voltage signal of a pair Differential Input respectively, the common source of two nmos pass transistors that the first pair of differential switch is right in the second end connecting valve level circuit of electric capacity one, and by resistance three ground connection; The common source of two nmos pass transistors that the second pair of differential switch is right in second end connecting valve level circuit of electric capacity two, and by resistance four ground connection;
Described load stage circuit is made up of load resistance one, load resistance two, resistance five, electric capacity four; Each load resistance all connects operating voltage and switching stage circuit; Resistance five and electric capacity four are all connected the common drain of two PMOS transistor in operating voltage and dynamic current source;
Described dynamic current source is made up of the PMOS transistor one of common drain and PMOS transistor two; The source electrode of PMOS transistor one to connect in the grid of PMOS transistor two and switching stage circuit the common source of two right nmos pass transistors of the first pair of differential switch; The source electrode of PMOS transistor two to connect in the grid of PMOS transistor one and switching stage circuit the common source of two right nmos pass transistors of the second pair of differential switch.
2. the frequency mixer of low-power consumption according to claim 1, low noise, it is characterized in that, the drain electrode of the nmos pass transistor three that the first differential switch centering is encouraged by positive local oscillation signal is all connected load resistance one with the second differential switch centering by the drain electrode bearing the nmos pass transistor five that local oscillation signal encourages; The drain electrode of the nmos pass transistor six that the first differential switch centering is encouraged by positive local oscillation signal with the second differential switch centering by the drain electrode bearing the nmos pass transistor four that local oscillation signal encourages all is connected load resistance two.
3. the frequency mixer of low-power consumption according to claim 1, low noise, is characterized in that, described transconductance stage circuit also comprises electric capacity three, and electric capacity three is connected between the second end of electric capacity one and the second end of electric capacity two.
4. the frequency mixer of low-power consumption according to claim 1, low noise, is characterized in that, resistance three and/or resistance four replace with nmos pass transistor.
5. the frequency mixer of low-power consumption according to claim 1, low noise, is characterized in that, resistance five replaces with current source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410735942.4A CN104467686A (en) | 2014-12-04 | 2014-12-04 | Low-power-consumption and low-noise frequency mixer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410735942.4A CN104467686A (en) | 2014-12-04 | 2014-12-04 | Low-power-consumption and low-noise frequency mixer |
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| Publication Number | Publication Date |
|---|---|
| CN104467686A true CN104467686A (en) | 2015-03-25 |
Family
ID=52913179
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|---|---|---|---|
| CN201410735942.4A Pending CN104467686A (en) | 2014-12-04 | 2014-12-04 | Low-power-consumption and low-noise frequency mixer |
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|---|---|---|---|---|
| CN106487393A (en) * | 2015-09-02 | 2017-03-08 | 香港城市大学 | The electronic installation using in a communications system |
| WO2018054152A1 (en) * | 2016-09-26 | 2018-03-29 | 华讯方舟科技有限公司 | Down-conversion device |
| CN109995328A (en) * | 2017-12-29 | 2019-07-09 | 华为技术有限公司 | Frequency mixer, transmitter, chip and relevant device |
| CN111224683A (en) * | 2019-12-30 | 2020-06-02 | 北斗航天卫星应用科技集团有限公司 | Low-noise large dynamic radio frequency receiving channel |
| CN113395078A (en) * | 2020-02-27 | 2021-09-14 | 意法半导体 (Alps) 有限公司 | Device for generating phase quadrature radio frequency signals |
| CN113746431A (en) * | 2021-08-06 | 2021-12-03 | 天津大学 | Ultra-wideband high-linearity frequency mixer with image rejection function |
| CN113839622A (en) * | 2020-06-24 | 2021-12-24 | 美国亚德诺半导体公司 | Transconductance circuit with programmable trade-off between bandwidth and flicker noise |
| CN117394875A (en) * | 2023-12-11 | 2024-01-12 | 芯迈微半导体(上海)有限公司 | Multi-mixer circuit of multi-band receiver |
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| CN106487393A (en) * | 2015-09-02 | 2017-03-08 | 香港城市大学 | The electronic installation using in a communications system |
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| CN113395078A (en) * | 2020-02-27 | 2021-09-14 | 意法半导体 (Alps) 有限公司 | Device for generating phase quadrature radio frequency signals |
| CN113839622A (en) * | 2020-06-24 | 2021-12-24 | 美国亚德诺半导体公司 | Transconductance circuit with programmable trade-off between bandwidth and flicker noise |
| CN113746431A (en) * | 2021-08-06 | 2021-12-03 | 天津大学 | Ultra-wideband high-linearity frequency mixer with image rejection function |
| CN113746431B (en) * | 2021-08-06 | 2024-01-05 | 天津大学 | Ultra-wideband high-linearity mixer with image rejection function |
| CN117394875A (en) * | 2023-12-11 | 2024-01-12 | 芯迈微半导体(上海)有限公司 | Multi-mixer circuit of multi-band receiver |
| CN117394875B (en) * | 2023-12-11 | 2024-03-08 | 芯迈微半导体(上海)有限公司 | Multi-mixer circuit of multi-band receiver |
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