CN113746431A - Ultra-wideband high-linearity frequency mixer with image rejection function - Google Patents
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- H—ELECTRICITY
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Abstract
The invention discloses an ultra-wideband high-linearity frequency mixer with an image rejection function, which comprises an intermediate frequency transconductance stage, a local oscillation switch stage and a frequency conversion stage, wherein the intermediate frequency transconductance stage is used for inputting intermediate frequency differential signals, converting the intermediate frequency differential signals into current signals through transconductance amplification, and entering the current signals into the local oscillation switch stage for further frequency mixing; the local oscillator switch stage is used for carrying out frequency mixing operation on the local oscillator differential signal and the intermediate frequency differential signal to form a radio frequency differential signal after frequency mixing; and the radio frequency load stage is used for receiving the radio frequency differential signal after frequency mixing, outputting the radio frequency differential signal to the radio frequency matching network, converting the radio frequency differential signal into a single-ended radio frequency signal and outputting the single-ended radio frequency signal. According to the ultra-wideband high-linearity frequency mixer topological structure with the image rejection function, the intermediate frequency, the local oscillator and the radio frequency can cover a wider working frequency band, good balance among indexes such as linearity, gain flatness, isolation, power consumption and design cost is achieved, the function of image rejection is achieved, and the use requirements of a multi-standard transmitter are met.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to an ultra-wideband high-linearity frequency mixer with an image rejection function.
Background
With the wide application of millimeter wave frequency bands in commercial markets, the demands for low-cost and high-integration transceiving systems are increasing. The data rates of modern wireless communications have increased exponentially, which places higher demands on the operating bandwidth of the communication system. The mixer is used as an important frequency conversion module in a millimeter wave transceiving system, plays a role in starting and stopping in the operation of the whole system, and the working state of the transceiving system is directly influenced by indexes such as working bandwidth, gain, linearity, stray rejection and the like.
Most of the traditional broadband upper frequency mixer adopts a passive structure, has better working bandwidth and linearity, but has the problems of large frequency conversion loss, small port isolation and larger local oscillator working power. Compared with the active mixer, the active mixer can achieve better gain and isolation, the requirement of local oscillator power is relatively small, but the working frequency and the linearity are limited to a certain extent. If the intermediate frequency port, the local oscillator port and the radio frequency port are ensured to have a wider working frequency band, the intermediate frequency port, the local oscillator port and the radio frequency port still have better gain and linearity, which is a difficult problem to be measured and solved.
In the up-mixer, the frequency of the transmitted signal is converted to generate an upper sideband signal and a lower sideband signal, and the operating sidebands of the upper sideband signal and the lower sideband signal need to be selected when the up-mixer is used. For the problem of image rejection in the up-mixer, there are two main solutions, one is to adopt the architecture of image rejection, and the other is to adopt a suitable frequency selection mode. The former is almost suitable for various frequency band selection conditions for image signal suppression, but the disadvantages are that the complexity of the up-mixing module design is increased, and the design cost is also increased; the latter hardly increases the design cost, but greatly limits the range of frequency band selection. What implementation to use needs further consideration in connection with the actual situation.
Disclosure of Invention
The invention aims to provide an ultra-wideband high-linearity frequency mixer with an image rejection function, aiming at the technical defects in the prior art.
The technical scheme adopted for realizing the purpose of the invention is as follows:
an ultra-wideband high linearity mixer with image rejection, comprising:
an intermediate frequency transconductance stage for inputting intermediate frequency differential signals, converting the intermediate frequency differential signals into current signals through transconductance amplification, entering the local oscillation switching stage for further frequency mixing, and using a first transistor Q1And a second transistor Q2Is formed of a first transistor Q1And a second transistor Q2The emitter of the differential amplifier is grounded, and the base of the differential amplifier is connected with the output end of the intermediate frequency matching network which converts the input intermediate frequency signal into a differential signal;
a local oscillator switch stage for mixing the local oscillator differential signal with the intermediate frequency differential signal to form a mixed RF differential signal, and a third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Forming; third transistor Q3And a fourth transistor Q4Is connected to the first transistor Q1Collector connected, fifth transistor Q5And a sixth transistor Q6Is connected with the emitter of the second transistor Q2Collector connected, third transistor Q3And a sixth transistor Q6The base electrode of the first transistor is connected with a first signal of a differential signal which is converted and output by the input single-ended local oscillator signal through the local oscillator port matching network, and the fourth transistor Q5And a fifth transistor Q4The base electrode of the differential amplifier is connected with a second signal of the differential signal which is converted and output by the local oscillator port matching network from the input single-ended local oscillator signal;
a radio frequency load stage for receiving the mixed radio frequency differential signal, outputting to the radio frequency matching network, converting into single-ended radio frequency signal, outputting via the inductor L9Inductor L10Is formed of an inductance L9And a third transistor Q3And a fifth transistor Q5The other end of the base is connected with an input connecting end of the radio frequency matching network; inductor L10And a fourth transistor Q4And a sixth transistor Q6The base of (2) is connected to, and the other end ofThe other input connection of the radio frequency matching network.
As a preferred embodiment, the first transistor Q1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6The base of (1) is connected to the substrate bias current.
As a preferred embodiment, the first transistor Q is characterized in that1A second transistor Q2The emitters are connected with an inductor respectively, then grounded, and the bases are connected with a capacitor respectively in series to separate the intermediate frequency signal from the direct current bias current.
As a preferable technical scheme, the intermediate frequency matching network is characterized by comprising a Marchand band and an inductor L1Inductor L2Resistance R1Resistance R2The Marchand balun is used for converting a single-ended intermediate frequency input signal into a differential signal, and the inductor L1Inductor L2Resistance R1Resistance R2For adjusting the input impedance of the intermediate-frequency transconductance stage, inductor L1And a resistor R1Series connection, inductance L2And a resistor R2Series connection, inductance L1Inductance L2The other end is grounded, and a resistor R1Resistance R2The other ends of the two terminals are respectively connected with the output ends corresponding to the Marchand bands to realize maximum power transmission.
As a preferred technical solution, the local oscillator port matching network is composed of a capacitor C3Capacitor C4Resistance R1Inductor L7Inductor L8A transformer, wherein the transformer is composed of an inductor L5Inductor L6Composition, capacitance C3Is connected in parallel to the inductor L5Input side, capacitance C3One end of the capacitor is grounded, and the other end of the capacitor is connected with an input single-ended local oscillator signal, and a capacitor C4Resistance R1Is connected in parallel to the inductor L6And a capacitor C4At the resistance R1And an inductance L6R is a resistance1Both sides ofRespectively connected with inductors L7Inductor L8One terminal of (1), inductance L7Inductor L8The other end of the first and second signal output terminals is used as the output terminal of the first and second signals.
As a preferred technical solution, the rf matching network is composed of a resistor R2Capacitor C5Capacitor C6A transformer, wherein the transformer is composed of an inductor L11Inductor L12Is formed of an inductance L11With centre-tap connection VDDSupplying power to the circuit; resistance R2Capacitor C5Is connected in parallel to the inductor L11Input side and capacitance C5At the resistance R2And an inductance L11Between, capacitance C6Is connected in parallel to the inductor L12Output side of, capacitor C6One end of the first and second terminals is grounded, and the other end is used as a single-ended radio frequency signal output end.
As a preferred technical solution, the bias circuit of the base bias current is composed of a seventh transistor Q7Resistance R3Resistance R4Forming; wherein the seventh transistor Q7Emitter grounding and collector connecting resistor R4One terminal of (1), resistance R4At the other end VDDThe seventh transistor Q7Base electrode connecting resistance R3One terminal of (1), resistance R3Is connected to a seventh transistor Q7And the collector electrode of (2) is taken as VbiasAn output end;
v of bias circuitbiasConnected to a first transistor Q of an intermediate-frequency transconductance stage1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Such that the first transistor Q1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Is operated in the amplifying state.
The mixer circuit topology provided by the invention adopts a method of combining an active mixer core and a passive ultra-wideband matching network, can realize ultra-wideband working bandwidth, and simultaneously realizes good balance among indexes such as gain, linearity, isolation, power consumption and the like.
According to the circuit topology of the frequency mixer, the frequency mixing core is designed based on the Gilbert unit, the transconductance stage selects a transistor with a larger size, and the linearity of the whole frequency mixing is improved by combining the emitter degeneration inductance.
The mixer circuit topology provided by the invention adopts the ultra-wide band matching network, the ultra-wide working bandwidths of the intermediate frequency port, the local oscillator port and the radio frequency port can be realized, and the local oscillator port and the radio frequency port matching network have the filtering characteristic and can better filter out-of-band signals.
The mixer circuit topology provided by the invention realizes the suppression of the image signal by optimizing the frequency band selection mode, can reduce the area of chip design to a certain extent, and reduces the design cost.
According to the ultra-wideband high-linearity frequency mixer topological structure with the image rejection function, the intermediate frequency, the local oscillator and the radio frequency can cover a wider working frequency band, good balance among indexes such as linearity, gain flatness, isolation, power consumption and design cost is achieved, the function of image rejection is achieved, and the use requirements of a multi-standard transmitter are met.
Drawings
Fig. 1 is a proposed ultra wide band high linearity mixer circuit topology with image rejection;
fig. 2 is a schematic diagram of the proposed frequency selection of a mixer circuit based on image rejection;
FIG. 3 is a diagram of reflection losses of an RF port, a local oscillator port, and an RF port in an embodiment;
FIG. 4 is a graph of simulation results of conversion gain as a function of frequency of a radio frequency signal at different intermediate frequencies according to an embodiment;
FIG. 5 shows an embodiment P1dBSimulation result graphs under different intermediate frequencies and local oscillation frequency changes;
fig. 6 is a diagram of simulation results of the image rejection in the embodiment under different intermediate frequency local oscillator frequency changes.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 shows a novel ultra-wideband high-linearity mixer topology with image rejection according to an embodiment of the present invention, where the circuit topology includes: the device comprises an intermediate frequency transconductance stage, an intermediate frequency matching network, a local oscillator switch stage, a local oscillator matching network, a radio frequency load stage and a radio frequency matching network.
The three matching networks are designed to be used for conversion of single-ended signals and differential signals on one hand, and to be used for realizing impedance matching under an ultra-wide band so as to realize maximum power transmission of signals on the other hand.
Wherein the intermediate frequency transconductance stage is composed of a first transistor Q1And a second transistor Q2Is formed of a first transistor Q1And a second transistor Q2Base level of the capacitor is respectively connected in series with a DC blocking capacitor C1And a DC blocking capacitor C2For separating the intermediate frequency signal IF from the DC bias, a first transistor Q1And a second transistor Q2Is biased using circuit topology N4，N4In which a resistor R is included2Resistance R4And a transistor Q7The size of the bias current is changed by adjusting the size of the transistor and the size of the resistor, so that the first transistor Q is enabled1And a second transistor Q2The DC can be biased to work in an amplified state. A first transistor Q1And a second transistor Q2Respectively connected with inductors L3And an inductance L4The parasitic capacitance of the transistor is reduced, the linearity of the circuit is improved, and the inductance value is not selected too much, otherwise the gain of the whole circuit is affected. The input intermediate frequency signal is converted into a current signal through transconductance amplification and enters a local oscillation switching stage for further frequency mixing.
The intermediate frequency transconductance stage input matching network comprises a Marchand band and a resistor R1Resistance R2Electricity, electricityFeeling L1Inductor L2The input intermediate frequency signal is converted into a differential signal via a Marchand band and then respectively connected to the first transistors Q1And a second transistor Q2The input voltage of the switching stage is amplified by a transconductance stage differential amplifier to enter the switching stage for further frequency mixing; inductor L1Inductor L2Resistance R1Resistance R2The input impedance of the intermediate frequency transconductance stage is adjusted to be about 50 ohms, and then the intermediate frequency transconductance stage is connected with a Marchand balun to realize maximum power transmission.
The local oscillator switch stage is composed of a third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Formed, the base bias of the transistor adopts a circuit topology N4，N4In which a resistor R is included2Resistance R4And a transistor Q7V of bias circuitbiasIs connected to a third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6By adjusting the size of the transistor and the size of the resistor to change the magnitude of the bias current, the third transistor Q is enabled3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6The DC can be biased to work in an amplified state. The local oscillator differential signal passes through the third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Enters the switching stage, performs a mixing operation with the intermediate frequency signal, and the mixed radio frequency signal passes through the third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6To the load stage.
Local oscillator port matching network N2Comprising a capacitor C3Transformer and capacitor C4Inductor L7Inductor L8The transformer consists of an inductor L5And an inductance L6Form, matching network N2The local oscillator single-ended input signal conversion circuit is mainly used for converting a local oscillator single-ended input signal into a differential signal; the input single-end local oscillation signal LO is converted into a differential signal through the matching network, and the third crystalTransistor Q3And a sixth transistor Q6Receiving the same phase signal Vlo, the fourth transistor Q4And a fifth transistor Q5Followed by another in-phase signal Vlo. Intermediate frequency differential signal via third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Enters the local oscillator switch stage and mixes with the local oscillator signal of the base stage, and the mixed radio frequency signal passes through the third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Is output from the collector.
The RF load stage comprises an inductor L9Inductor L10From the third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6The radio frequency signal output by the collector passes through an inductor L9Inductor L10Enter into the matching network N3. Matching network N3Comprising a resistance R2Capacitor C5Transformer and capacitor C6Wherein the transformer is composed of an inductor L11And an inductance L12Form, matching network N3The method is mainly used for converting the radio frequency differential output signal into a single-ended signal. Inductor L11A central tap is connected with VDD to supply power to the circuit, and the output radio frequency differential signal passes through the matching network N3Converted to a single-ended signal RF for output.
In the scheme, the whole circuit topology is designed based on the Gilbert unit, and the whole circuit topology adopts an active framework and has better gain and isolation.
In the above scheme, the local oscillator port matches network N2And radio frequency port matching network N3When the multi-order matching network based on the transformer is used, the inductance, the capacitance and the resistance are required to be adjusted and optimized by combining the input and output impedance of the local oscillator input port and the radio frequency input port, so that the working frequency band required by design is achieved. In addition, the matching result of the transformer-based multi-order matching network integrally shows a band-pass characteristic, and can effectively inhibit out-of-band stray. Intermediate frequency port matching network N1Is based on Marchand bagThe matching network is suitable for designing the ultra-wideband intermediate frequency matching network.
In the above scheme, the linearity of the whole mixer depends on the first transistor Q of the intermediate frequency transconductance stage1A second transistor Q2The size of the tube is selected, the larger the tube size is, the higher the linearity of the mixer is, but the power consumption of the circuit is also increased, and the design needs to be adjusted according to actual requirements. Intermediate frequency transconductance stage first transistor Q1A second transistor Q2Are respectively connected with an inductor L3Inductor L4The method is used for reducing the parasitic capacitance of the transistor and improving the linearity of the circuit.
In the above scheme, in order to implement the function of image rejection, the working frequency bands of the three intermediate frequency, local oscillator and radio frequency ports need to be properly selected, it is first to ensure that the working frequency bands of the three ports do not overlap, and it is second to note that the selection of the intermediate frequency working frequency is not too small, otherwise it may be difficult to design the radio frequency matching network, and extremely good range reduction characteristics are needed to implement the selection of the sideband signals.
In the above scheme, the implementation can be realized under a BiCMOS process, and the transistor Q1To Q7Is an NPN bipolar junction transistor. The structure is also suitable for an NMOS transistor, and the emitter, the base and the collector are respectively changed into a source, a grid and a drain.
Fig. 2 shows a principle of selecting a three-port operating band for implementing an image rejection function according to an embodiment of the present invention. In order to realize better image signal suppression effect based on the circuit topology, the selection principle is as follows:
1. the intermediate frequency band, the local oscillator frequency band and the radio frequency band are not overlapped in principle;
2. the selection of the radio frequency working frequency band only needs to comprise one sideband after frequency mixing in principle, and does not comprise a local oscillator sideband and a mirror image sideband;
3. the intermediate frequency is not selected too low, so as to facilitate the design of the radio frequency matching network.
Fig. 3 shows reflection losses of the if port, the lo port, and the rf port obtained by circuit simulation according to the embodiment of the present invention, where the reflection loss of the if port is less than-10 dB in 6-17.5GHz, the reflection loss of the lo port is less than-8.5 dB in 16-24GHz, and the reflection loss of the rf port is less than-5 dB in 24-31 GHz.
FIG. 4 shows the simulated frequency conversion gain of the circuit according to the embodiment of the present invention, wherein the intermediate frequency range is 3-11GHz, the radio frequency range is 24-31GHz, the overall gain is greater than-7 dB, and the in-band gain fluctuation is less than 1 dB.
FIG. 5 shows an OP for circuit simulation according to an embodiment of the present invention1dBThe medium frequency range is 3-11GHz, the radio frequency range is 24-30GHz, the whole frequency range is larger than-1.2 dBm, and the maximum frequency range is 1.1 dBm.
FIG. 6 shows the image rejection ratio of the circuit simulation of the embodiment of the present invention, wherein the IF frequency range is 3-11GHz, the RF frequency range is 24-30GHz, and the image rejection ratio can preferably reach 32 dB.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. Take image suppression function's ultra wide band high linearity mixer, its characterized in that includes:
an intermediate frequency transconductance stage for inputting intermediate frequency differential signals, converting the intermediate frequency differential signals into current signals through transconductance amplification, entering the local oscillation switching stage for further frequency mixing, and using a first transistor Q1And a second transistor Q2Is formed of a first transistor Q1And a second transistor Q2The emitter of the differential amplifier is grounded, and the base of the differential amplifier is connected with the output end of the intermediate frequency matching network which converts the input intermediate frequency signal into a differential signal;
a local oscillator switch stage for mixing the local oscillator differential signal with the intermediate frequency differential signal to form a mixed RF differential signal, and a third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Forming; third transistor Q3And a fourth transistor Q4Is connected to the first transistor Q1Collector connected, fifth transistor Q5And a sixth transistor Q6Is connected with the emitter of the second transistor Q2Collector connected, third transistor Q3And a sixth transistor Q6The base electrode of the first transistor is connected with a first signal of a differential signal which is converted and output by the input single-ended local oscillator signal through the local oscillator port matching network, and the fourth transistor Q5And a fifth transistor Q4The base electrode of the differential amplifier is connected with a second signal of the differential signal which is converted and output by the local oscillator port matching network from the input single-ended local oscillator signal;
a radio frequency load stage for receiving the mixed radio frequency differential signal, outputting to the radio frequency matching network, converting into single-ended radio frequency signal, outputting via the inductor L9Inductor L10Is formed of an inductance L9And a third transistor Q3And a fifth transistor Q5The other end of the base is connected with an input connecting end of the radio frequency matching network; inductor L10And a fourth transistor Q4And a sixth transistor Q6The other end of the base is connected with the other input connecting end of the radio frequency matching network.
2. The ultra-wideband high linearity mixer with image rejection of claim 1, wherein the first transistor Q1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6The base of (1) is connected to the substrate bias current.
3. The ultra-wideband high linearity mixer with image rejection of claim 2, wherein the first transistor Q1A second transistor Q2The emitters are connected with an inductor respectively, then grounded, and the bases are connected with a capacitor respectively in series to separate the intermediate frequency signal from the direct current bias current.
4. The mirror image inhibitor of claim 1The functional ultra-wideband high-linearity frequency mixer is characterized in that the intermediate frequency matching network consists of a Marchand band and an inductor L1Inductor L2Resistance R1Resistance R2The Marchand balun is used for converting a single-ended intermediate frequency input signal into a differential signal, and the inductor L1Inductor L2Resistance R1Resistance R2For adjusting the input impedance of the intermediate-frequency transconductance stage, inductor L1And a resistor R1Series connection, inductance L2And a resistor R2Series connection, inductance L1Inductance L2The other end is grounded, and a resistor R1Resistance R2The other ends of the two terminals are respectively connected with the output ends corresponding to the Marchand bands to realize maximum power transmission.
5. The ultra-wideband high linearity mixer with image rejection of claim 1, wherein said local oscillator port matching network is comprised of a capacitor C3Capacitor C4Resistance R1Inductor L7Inductor L8A transformer, wherein the transformer is composed of an inductor L5Inductor L6Composition, capacitance C3Is connected in parallel to the inductor L5Input side, capacitance C3One end of the capacitor is grounded, and the other end of the capacitor is connected with an input single-ended local oscillator signal, and a capacitor C4Resistance R1Is connected in parallel to the inductor L6And a capacitor C4At the resistance R1And an inductance L6R is a resistance1Are respectively connected with an inductor L on two sides7Inductor L8One terminal of (1), inductance L7Inductor L8The other end of the first and second signal output terminals is used as the output terminal of the first and second signals.
6. The ultra-wideband high linearity mixer with image rejection of claim 1, wherein said rf matching network is comprised of a resistor R2Capacitor C5Capacitor C6A transformer, wherein the transformer is composed of an inductor L11Inductor L12Is formed of an inductance L11With centre-tap connection VDDSupply the circuitElectricity; resistance R2Capacitor C5Is connected in parallel to the inductor L11Input side and capacitance C5At the resistance R2And an inductance L11Between, capacitance C6Is connected in parallel to the inductor L12Output side of, capacitor C6One end of the first and second terminals is grounded, and the other end is used as a single-ended radio frequency signal output end.
7. The ultra-wideband high linearity mixer with image rejection of claim 1, wherein said bias circuit for said base bias current is comprised of a seventh transistor Q7Resistance R3Resistance R4Forming; wherein the seventh transistor Q7Emitter grounding and collector connecting resistor R4One terminal of (1), resistance R4At the other end VDDThe seventh transistor Q7Base electrode connecting resistance R3One terminal of (1), resistance R3Is connected to a seventh transistor Q7And the collector electrode of (2) is taken as VbiasAn output end;
v of bias circuitbiasConnected to a first transistor Q of an intermediate-frequency transconductance stage1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Such that the first transistor Q1A second transistor Q2A third transistor Q3A fourth transistor Q4A fifth transistor Q5And a sixth transistor Q6Is operated in the amplifying state.
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| CN109714005A (en) * | 2018-12-25 | 2019-05-03 | 电子科技大学 | A kind of restructural double frequency-band frequency mixer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114268329A (en) * | 2021-12-14 | 2022-04-01 | 天津大学 | Dual-frequency high-linearity demodulator |
| CN114268329B (en) * | 2021-12-14 | 2023-09-19 | 天津大学 | Dual-frequency high-linearity demodulator |
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