CN116155206A - Ultra-wideband heterogeneous active mixer - Google Patents

Ultra-wideband heterogeneous active mixer Download PDF

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Publication number
CN116155206A
CN116155206A CN202310101467.4A CN202310101467A CN116155206A CN 116155206 A CN116155206 A CN 116155206A CN 202310101467 A CN202310101467 A CN 202310101467A CN 116155206 A CN116155206 A CN 116155206A
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transistor
capacitor
common
resistance
drain
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王勇
李鑫炎
马殊
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The invention belongs to the technical field of wireless communication, and particularly relates to an ultra-wideband heterogeneous active mixer. The device comprises a radio frequency input stage, a local oscillator input stage, a Gilbert mixing core and an intermediate frequency output stage. By changing the bias voltage of the switching tube of the mixer, the isomerism of the active mixer between the cascode amplifier structure and the Gilbert mixer structure is realized, and the switching of the direct mode of the low frequency band and the mixing mode of the high frequency band is further realized. The working bandwidth of the Gilbert special source mixer is expanded through the broadband matching design of the radio frequency input stage and the local oscillator input stage; the design of the differential signal generating circuit is simplified and the power requirement on the local oscillation signal is reduced by adopting the design of a single-ended rotary differential amplifier circuit in the local oscillation input stage. Compared with the prior art, the invention simplifies the system design, realizes the conversion gain of 4.3-6.3 dB in the frequency mixing frequency band and the gain of 6.5-10 dB in the direct frequency band, and reduces the design pressure of the subsequent links.

Description

Ultra-wideband heterogeneous active mixer
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to an ultra-wideband heterogeneous active mixer.
Background
The mixer is a key module in the radio frequency front-end circuit and is used for realizing the conversion of the signal frequency. In different receiver system architectures, the rf signals received from the antennas often require a frequency conversion from rf to if by a mixer at the rf front end. Thus, mixers are very important for the overall receiver system.
With the development of wireless communication systems, communication terminal devices often need to coexist with multiple wireless communication technologies to meet different communication function requirements. This has led to an increasing demand for ultra-wideband receiver chips, particularly in applications requiring real-time signal reception over a wide frequency band, such as electromagnetic spectrum monitoring devices. The conventional ultra-wideband receiver realizes wideband coverage by using a plurality of receivers respectively operating in different frequency bands in parallel, but such a manner has the circumstance of reusing a common module such as a mixer, thereby greatly improving the volume, power consumption and cost of the device.
In addition, the receiver has different requirements for different frequency band signals when receiving ultra-wideband signals. For the low-frequency band signal, the signal can be directly amplified and then received; for the high-frequency band signal, the amplified signal needs to be down-converted to the intermediate frequency and then received. In order to meet the requirement, a switch switching mode is adopted at present, but the mode has the problems of large area, large power consumption and complex structure.
Therefore, research on an ultra-wideband heterogeneous mixer capable of realizing flexible configuration has important significance in solving the problems.
Disclosure of Invention
The invention aims to provide an ultra-wideband heterogeneous active mixer so as to meet the flexible configuration of direct communication and frequency conversion under the ultra-wideband application scene, meet the down-conversion requirements in receiving systems such as mobile communication, electromagnetic detection and the like, and be beneficial to miniaturization, low power consumption and low cost of equipment.
In order to achieve the above purpose, the invention adopts the following technical scheme:
an ultra-wideband heterogeneous active mixer comprises a radio frequency input stage, a local oscillator input stage, a Gilbert mixing core and an intermediate frequency output stage;
the radio frequency input stage is used for receiving radio frequency signals input by the antenna port, performing impedance transformation and broadband matching on the received radio frequency signals, and transmitting the radio frequency signals to the Gilbert frequency mixing core;
the local oscillator input stage is used for receiving a single-ended local oscillator signal, amplifying and converting the received single-ended local oscillator signal into a constant amplitude reverse differential local oscillator signal, and transmitting the constant amplitude reverse differential local oscillator signal to the Gilbert frequency mixing core;
the Gilbert frequency mixing core is connected with the radio frequency input stage and the local oscillator input stage and is used for mixing a radio frequency signal provided by the radio frequency input stage and a differential local oscillator signal provided by the local oscillator input stage into an intermediate frequency signal and simultaneously realizing the switching of a frequency mixing mode and a direct mode;
the intermediate frequency output stage is connected with the Gilbert frequency mixing core and is used for carrying out impedance transformation and broadband matching on the received intermediate frequency signals and outputting the intermediate frequency signals, and simultaneously inhibiting radio frequency and local oscillator leakage.
Further, the radio frequency input stage comprises a capacitor C 10 And capacitor C 11 Transmission line TL 4 Transmission line TL 5 And transmission line TL 6 Resistance R 19 And resistance R 20 Transistor M 17 And transistor M 18 ；
Capacitor C 10 In turn via transmission line TL 4 Transmission line TL 5 And transistor M 17 Gate of (C) is connected to 11 One end of (a) is connected with the transmission line TL 4 And transmission line TL 5 The other end of the common contact is grounded; resistor R 19 Is connected to the transmission line TL at one end 5 And transistor M 17 Between the gates of (a) and the other end via a transmission line TL 6 Connected with bias voltage V b11 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 20 Is connected with the bias voltage V b12 The other end is connected with a transistor M 18 A gate electrode of (a); transistor M 17 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 18 The drain electrode of the first transistor is connected and then used as an output end of the radio frequency input stage; transistor M 18 The source of (c) is grounded.
Further, the capacitor C 10 Capacitance C 11 Transmission line TL 4 Transmission line TL 5 Transmission line TL 6 And resistance R 19 Forming a radio frequency input matching network for realizing impedance matching, and a resistor R 19 Resistance R 20 Transmission line TL 6 Transistor M 17 And transistor M 18 Constitute a common drain amplifier unit one.
Further, the local oscillator input stage comprises an input common-drain amplifier, a differential common-source amplifier and an output common-drain amplifier;
the input common drain amplifier comprises a capacitor C 3 And a common drain amplifier unit II; capacitor C 3 One end of the common-drain amplifier unit is connected with the local oscillation input, and the other end of the common-drain amplifier unit is connected with the second input of the common-drain amplifier unit; the common drain amplifier unit II comprises a resistor R 8 Resistance R 9 Transmission line TL 1 Transistor M 8 And transistor M 9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 8 And transistor M 8 The grid electrode of the common drain amplifier unit is connected with the capacitor C as two input ends of the common drain amplifier unit 3 The other end of (1) is connected with the transmission line TL 1 Connected with bias voltage V b5 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 9 Is connected with the bias voltage V b6 The other end is connected with a transistor M 9 A gate electrode of (a); transistor M 8 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 9 The drain electrodes of the first common-drain amplifier unit are connected and then serve as output ends of second common-drain amplifier units to be connected with input ends of differential common-source amplifiers; transistor M 9 The source of (c) is grounded. The second common-drain amplifier unit has the same structure as the first common-drain amplifier unit, and parameters are adjusted;
the differential common source amplifier comprises a capacitor C 4 And capacitor C 5 Resistance R 10 Resistance R 11 Resistance R 12 Resistance R 13 And resistance R 14 Transistor M 10 Transistor M 11 And transistor M 12 Transmission line TL 2 And transmission line TL 3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 4 One end of which is connected with the output of the common-drain amplifier and the other end is connected with the transistor M 10 A gate electrode of (a); capacitor C 5 One end of (a) is connected to the transistor M 11 The other end of the grid electrode is grounded; resistor R 10 Series transmission line TL 2 Transmission line TL 2 The other end is connected with a power supply VDD; resistor R 11 Series transmission line TL 3 Transmission line TL 3 The other end is connected with a power supply VDD; resistor R 12 Is connected to the capacitor C 4 And transistor M 10 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 13 Is connected to the capacitor C 5 And transistor M 11 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 14 One end of (a) is connected to the transistor M 12 The other end is connected with the bias voltage V b8 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 10 Drain electrode of (C) is connected with resistor R 10 The first output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 11 Drain connecting resistor R 11 The second output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 12 The source of (c) is grounded.
The output common-drain amplifier comprises a common-drain amplifier unit III, a common-drain amplifier unit IV and a capacitor C 8 And capacitor C 9 The method comprises the steps of carrying out a first treatment on the surface of the The common drain amplifier unit three comprises a capacitor C 6 Resistance R 15 And resistance R 16 Transistor M 13 And transistor M 14 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 6 One end of the third common-drain amplifier unit is connected with the first output end of the differential common-source amplifier, and the other end is connected with the transistor M 13 A gate electrode of (a); resistor R 15 One end of (a) is connected to the transistor M 13 Gate and capacitance C of (2) 6 The other end is connected with bias voltage V b9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 16 One end of (a) is connected to the transistor M 14 The other end is connected with the bias voltage V b10 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 13 The drain electrode of (2) is connected with the power supply VDD, and the source electrode is connected with the transistor M 14 The drain electrode of the third common drain amplifier unit is used as the output end of the third common drain amplifier unit; transistor M 14 The source electrode of the transistor is grounded;
the common-drain amplifier unit IV and the common-drain amplifier unit III have the same structure and the same parameters, and the input end of the common-drain amplifier unit IV is connected with the second output end of the differential common-source amplifier;
capacitor C 8 And capacitor C 9 The capacitance is the same; one end of the capacitor is connected with the output end of the common drain amplifier unit III, and the other end of the capacitor is used as a local oscillator first output end LO_OUT+; capacitor C 9 One end is connected with the output end of the common drain amplifier unit four, and the other end is used as a local oscillator second output end LO_OUT-.
Further, the differential common source amplifier has symmetrical structure and a capacitor C 4 Resistance R 12 Transistor M 10 Resistance R 10 Transmission line TL 2 And capacitor C 5 Resistance R 13 Transistor M 11 Resistance R 11 Transmission line TL 3 Corresponding device parameters are the same.
Further, the amplitude of the signals output by the local oscillator first output end LO_OUT+ and the local oscillator second output end LO_OUT-are the same, and the phase difference is 180 degrees.
Further, the gilbert mixer core includes a transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 Transistor M 5 Transistor M 6 And transistor M 7 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 And resistance R 7 Capacitance C 1 And capacitor C 2 ；
Transistor M 1 Gate of (d), transistor M 4 Gate and resistor R of (2) 3 One end of the local oscillator is connected with the first input end of the Gilbert mixer core; transistor M 2 Gate of (d), transistor M 3 Gate and resistor R of (2) 4 One end of the local oscillator is connected with the second input end of the Gilbert frequency mixing core; resistor R 3 The other end is connected with bias voltage V b1 Resistance R 4 The other end is connected with bias voltage V b2 ；
Transistor M 1 Drain of (d), transistor M 3 Drain of (d) and resistance R 1 Is connected to one end of transistor M 2 Drain of (d), transistor M 4 Drain of (d) and resistance R 2 Is connected with one end of the mixer core and then is used as an output end of the Gilbert mixer core; resistor R 1 And resistance R 2 The other end is connected with a power supply VDD;
transistor M 1 And transistor M 2 Source is connected with transistor M 5 Drain electrode connection of transistor M 3 And transistor M 4 Source is connected with transistor M 6 Is connected with the drain electrode of the transistor;
transistor M 5 Gate connection resistor R of (2) 5 One end of (2) and a capacitor C 1 Is one end of transistor M 6 Gate connection resistor R of (2) 6 One end of (2) and a capacitor C 2 Is a member of the group; transistor M 5 And transistor M 6 Is connected with the source of the transistor M 7 Is connected with the drain electrode of the transistor; transistor M 7 Grid electrode connection resistor R 7 The source electrode is grounded;
capacitor C 1 The other end is connected with the output end of the radio frequency input stage, the resistor R 5 The other end is connected with bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 2 Is grounded at the other end of the resistor R 6 Is connected with the other end of the bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 7 Is connected with the other end of the bias voltage V b4 。
Further, bias voltage V b1 With bias voltage V b2 For switching control voltage between pass mode and mixing mode of ultra-wideband heterogeneous active mixer, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 As a mixer switching tube, a mixing function is realized.
Further, the gilbert mixer core structure is symmetrical, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 The parameters are the same; transistor M 5 And transistor M 6 The parameters are the same; resistor R 1 And resistance R 2 The parameters are the same, resistance R 3 And resistance R 4 The parameters are the same, resistance R 5 And resistance R 6 The parameters are the same; capacitor C 1 And capacitor C 2 The parameters are the same.
Further, the intermediate frequency output stage comprises a common-drain amplifier unit five and a resistor R 23 Fourth-order low-pass filter and capacitor C 15 ；
The input end of the common drain amplifier unit five is connected with the output end of the Gilbert frequency mixing core, and the output end is connected with a resistorR 23 Is a member of the group; the common-drain amplifier unit five and the common-drain amplifier unit three have the same structure, and parameters are adjusted according to requirements; resistor R 23 The other end of the filter is connected with the input end of the fourth-order low-pass filter; the output end of the fourth-order low-pass filter is connected with a capacitor C 15 Is a member of the group; capacitor C 15 The other end of the intermediate frequency output stage is connected with the output end of the intermediate frequency output stage;
the fourth-order low-pass filter comprises an inductance L 1 Capacitance C 13 Inductance L 2 And capacitor C 14 Inductance L 1 Is used as the input end of the fourth-order low-pass filter to be connected with the resistor R 23 The other end is connected with an inductor L 2 And a capacitor C 13 Is one end of the inductance L 2 One end of (2) and a capacitor C 14 One end of the capacitor C is connected to the output end of the fourth-order low-pass filter 13 And the other end of (C) and the capacitor C 14 The other ends of the two wires are respectively grounded.
After the technical scheme is adopted, the invention has the following beneficial effects:
1. the invention realizes flexible configuration of low-frequency direct connection and high-frequency mixing of the active mixer by changing the switching tube (transistor M 1 Transistor M 2 Transistor M 3 And transistor M 4 ) Bias voltage realizes isomerism of the active mixer between the cascode amplifier structure and the gilbert mixer structure, and further realizes switching of a direct mode of a low frequency band and a mixing mode of a high frequency band.
2. According to the invention, through the broadband matching design of the radio frequency input stage and the local oscillator input stage, the working bandwidth of the Gilbert-cell special source mixer is greatly expanded, the mixing bandwidth is 4.5-18 GHz, and the direct bandwidth is 0.2-4.5 GHz; the design of the differential signal generating circuit is simplified by adopting the design of the local oscillation input stage single-ended transfer differential amplifier circuit, and the power requirement on the local oscillation signal is reduced; the intermediate frequency output stage is provided with a fourth-order low-pass filter, so that the isolation between the radio frequency and the intermediate frequency and the isolation between the local oscillator and the intermediate frequency are improved.
3. The three ports of the active mixer are all single-ended input, so that the system design is simplified; meanwhile, the conversion gain of 4.3-6.3 dB in the frequency mixing frequency band and the gain of 6.5-10 dB in the direct frequency band are realized, and the design pressure of a subsequent link is reduced.
Drawings
FIG. 1 is a block diagram of an ultra wideband heterogeneous active mixer of the present invention;
FIG. 2 is a circuit diagram of an embodiment RF input stage;
FIG. 3 is a circuit diagram of an embodiment local oscillator input stage;
FIG. 4 is a block diagram of an embodiment Gilbert mixer core circuit;
FIG. 5 is a circuit diagram of an intermediate frequency output stage according to an embodiment;
FIG. 6 is a graph of the conversion gain simulation results of an embodiment ultra wideband heterogeneous active mixer;
FIG. 7 is a graph of the results of a through gain simulation of an embodiment ultra wideband heterogeneous active mixer;
fig. 8 is a diagram of isolation simulation results of an ultra wideband heterogeneous active mixer according to an embodiment.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
As shown in fig. 1, the present embodiment provides an ultra-wideband heterogeneous active mixer, which is based on a conventional gilbert-specific active mixer, and has an added radio frequency input stage, a local oscillator input stage and an intermediate frequency output stage, and a control voltage is added to switch between a mixing mode and a pass-through mode, so as to implement heterogeneous active mixer; the radio frequency input stage is used for realizing impedance transformation and broadband matching, and the input end of the radio frequency input stage is RF; the local oscillator input stage is used for amplifying and converting a single-ended local oscillator signal into a constant-amplitude inverse differential local oscillator signal, and the input end of the local oscillator input stage is LO; the Gilbert frequency mixing core is used for mixing a radio frequency signal and a local oscillation signal into an intermediate frequency signal and simultaneously realizing the switching between a frequency mixing mode and a direct-through mode; the intermediate frequency output stage is used for realizing impedance transformation and broadband matching, simultaneously inhibiting radio frequency and local oscillator leakage, and the output end of the intermediate frequency output stage is IF.
The radio frequency input stage comprises a radio frequency input matching network and a common drain amplifier; the local oscillator input stage comprises an input common-drain amplifier, a differential common-source amplifier and an output common-drain amplifier; the Gilbert mixer core comprises a radio frequency input blocking capacitor, a Gilbert mixer structure, a bias network and a current source circuit; the intermediate frequency output stage comprises a common drain amplifier, a series resistor, a fourth-order low-pass filter and a blocking capacitor.
As shown in fig. 2. Resistor R in radio frequency input stage 19 And transmission line TL 6 The series network belongs to the radio frequency input matching network and also serves as a common drain amplifier grid bias circuit. The line length and line width, resistance and capacitance of the transmission line in the radio frequency input matching network are designed according to the requirement, so that ultra-wideband matching of the circuit is realized.
As shown in fig. 3, the local oscillator input stage is input into the common-drain amplifier C 3 As blocking capacitance, transmission line TL 1 And resistance R 8 The series network is used as a local oscillator input matching network and a common drain amplifier grid bias circuit, so that grid feed of the transistor is matched with ultra-wideband of the circuit. The differential common source amplifier adopts a fully symmetrical circuit structure, wherein a single end of the differential common source amplifier is input, and the other input end is grounded after passing through a blocking capacitor; the double-end output is connected with the output common-drain amplifier. The amplitude of the signals output by the two ends of the differential common source amplifier is the same, and the phase difference is 180 degrees, so that the circuit realizes the single-end-to-differential conversion of the local oscillation signals. The two amplifier units of the output common-drain amplifier have the same structure, and the differential signals are fed into the Gilbert mixer core.
The radio frequency input stage and the local oscillator input stage realize ultra-wideband circuit matching, and specifically, the frequency mixing bandwidth of 4.5-18 GHz and the direct bandwidth of 0.2-4.5 GHz are realized in the embodiment, and the total bandwidth of radio frequency input signals is 0.2-18 GHz.
The gilbert mixer core is shown in fig. 4 and includes four transistors M1, M2, M as mixer switching transistors 3 And transistor M 4 The method comprises the steps of carrying out a first treatment on the surface of the Two transconductance amplifier transistors M 5 And M 6 The method comprises the steps of carrying out a first treatment on the surface of the Current source transistor M 7 The method comprises the steps of carrying out a first treatment on the surface of the Bias resistor R 3 R4, R5, R6 and R7; load resistors R1 and R2; blocking capacitors C1 and C2. To reduce mailingThe high frequency loss caused by the capacitor requires the selection of a small-sized mixer switching tube.
Wherein the transistor M 1 Gate of (d), transistor M 4 The grid electrode of the transistor M is connected with the resistor R3 and then is connected with the output of the first end of the local oscillator 2 Gate of (d), transistor M 3 Gate and resistor R of (2) 4 The second end of the local oscillator is connected with the output of the second end of the local oscillator after being connected; transistor M 1 Drain of (d), transistor M 3 Drain of (d) and resistance R 1 Connected to transistor M 2 Drain of (d), transistor M 4 The drain electrode of the resistor R2 is connected with the output end of the Gilbert frequency mixing core to be used for outputting intermediate frequency signals; transistor M 1 And transistor M 2 Source is connected with transistor M 5 Drain electrode connection of transistor M 3 And transistor M 4 Source is connected with transistor M 6 Is connected to the drain of the transistor. Transistor M 5 And M 6 The differential common source amplifier is formed, single-ended to differential conversion of radio frequency signals is realized, conversion gain is improved, and design pressure of a subsequent link is reduced. By means of a pair of transistors M 1 And M 4 Gate voltage V of (2) b1 And transistor M 2 And M 3 Gate voltage V of (2) b2 The control of the frequency mixing mode and the through mode can be flexibly realized. In the present embodiment, when the voltage V b1 Equal to voltage V b2 When the voltage is 2.3V, the circuit is a complete Gilbert frequency mixing unit, is in a frequency mixing mode and is normally fed with local oscillation signals; when the voltage V b1 at-1V, voltage V b2 At 2.8V, transistor M 1 And M 4 Turn off, transistor M 2 And M 3 On, transistor M 5 And transistor M 2 The common-source common-gate amplifier is formed to realize a direct-pass mode, and no local oscillation signal is fed in. By adopting an active Gilbert mixing structure and a differential common source amplifier, the conversion gain of 4.3-6.3 dB in a mixing frequency band and the direct gain of 6.5-10 dB in a direct frequency band are realized.
As shown in fig. 5, the intermediate frequency output stage comprises a common-drain amplifier, a resistor R 23 Fourth-order low-pass filter and blocking capacitor C 15 . Common drain amplifier implementationLow impedance output, series resistance R 23 And then realizing the broadband matching of the intermediate frequency output circuit. The cut-off frequency of the fourth-order low-pass filter is 4.5GHz, so that leakage of radio frequency signals and local oscillation signals at an intermediate frequency port is inhibited, and the port isolation is improved. The intermediate frequency output stage realizes single-ended output, and the intermediate frequency bandwidth is 0.2-4.5 GHz.
FIG. 6 is a graph of the conversion gain simulation results of an embodiment ultra wideband heterogeneous active mixer; FIG. 7 is a graph of the results of a through gain simulation of an embodiment ultra wideband heterogeneous active mixer; fig. 8 is a diagram of isolation simulation results of an ultra wideband heterogeneous active mixer according to an embodiment. As shown in fig. 6, in the mixing mode of the ultra-wideband heterogeneous active mixer of the present embodiment, the conversion gain is 4.3-6.3 dB in the frequency range of 4.5-18 GHz; in the through mode, the gain is 6.5-10 dB in the frequency range of 0.2-4.5 GHz as shown in FIG. 7, and in the mixing mode, the isolation is greater than 32dB as shown in FIG. 8. Therefore, the working bandwidth of the Gilbert-cell single-ended differential amplifier circuit design is greatly expanded through the broadband matching design of the radio frequency input stage and the local oscillation input stage, the design of the differential signal generating circuit is simplified, and the power requirement on the local oscillation signal is reduced; the intermediate frequency output stage is provided with a fourth-order low-pass filter, so that the isolation between the radio frequency and the intermediate frequency and the isolation between the local oscillator and the intermediate frequency are improved.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.

Claims (8)

1. The utility model provides an ultra wide band heterogeneous active mixer, includes radio frequency input stage, local oscillator input stage, gilbert's frequency mixing core and intermediate frequency output stage, its characterized in that:
the radio frequency input stage is used for receiving radio frequency signals input by the antenna port, performing impedance transformation and broadband matching on the received radio frequency signals, and transmitting the radio frequency signals to the Gilbert frequency mixing core;
the local oscillator input stage is used for receiving a single-ended local oscillator signal, amplifying and converting the received single-ended local oscillator signal into a constant amplitude reverse differential local oscillator signal, and transmitting the constant amplitude reverse differential local oscillator signal to the Gilbert frequency mixing core;
the Gilbert frequency mixing core is connected with the radio frequency input stage and the local oscillator input stage and is used for mixing a radio frequency signal provided by the radio frequency input stage and a differential local oscillator signal provided by the local oscillator input stage into an intermediate frequency signal and simultaneously realizing the switching of a frequency mixing mode and a direct mode;
the intermediate frequency output stage is connected with the Gilbert frequency mixing core and is used for carrying out impedance transformation and broadband matching on the received intermediate frequency signals and outputting the intermediate frequency signals, and simultaneously inhibiting radio frequency and local oscillator leakage.
2. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the radio frequency input stage comprises a capacitor C 10 And capacitor C 11 Transmission line TL 4 Transmission line TL 5 And transmission line TL 6 Resistance R 19 And resistance R 20 Transistor M 17 And transistor M 18 ；
Capacitor C 10 In turn via transmission line TL 4 Transmission line TL 5 And transistor M 17 Gate of (C) is connected to 11 One end of (a) is connected with the transmission line TL 4 And transmission line TL 5 The other end of the common contact is grounded; resistor R 19 Is connected to the transmission line TL at one end 5 And transistor M 17 Between the gates of (a) and the other end via a transmission line TL 6 Connected with bias voltage V b11 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 20 Is connected with the bias voltage V b12 The other end is connected with a transistor M 18 A gate electrode of (a); transistor M 17 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 18 The drain electrode of the first transistor is connected and then used as an output end of the radio frequency input stage; transistor M 18 The source of (c) is grounded.
3. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the local oscillator input stage comprises an input common-drain amplifier, a differential common-source amplifier and an output common-drain amplifier;
the input common drain amplifier comprises a capacitor C 3 And a common drain amplifier unit II; capacitor C 3 One end of the common-drain amplifier unit is connected with the local oscillation input, and the other end of the common-drain amplifier unit is connected with the second input of the common-drain amplifier unit; the common drain amplifier unit II comprises a resistor R 8 Resistance R 9 Transmission line TL 1 Transistor M 8 And transistor M 9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 8 And transistor M 8 The grid electrode of the common drain amplifier unit is connected with the capacitor C as two input ends of the common drain amplifier unit 3 The other end of (1) is connected with the transmission line TL 1 Connected with bias voltage V b5 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 9 Is connected with the bias voltage V b6 The other end is connected with a transistor M 9 A gate electrode of (a); transistor M 8 The drain electrode of (2) is connected with the power supply VDD, the source electrode and the transistor M 9 The drain electrodes of the first common-drain amplifier unit are connected and then serve as output ends of second common-drain amplifier units to be connected with input ends of differential common-source amplifiers; transistor M 9 The source electrode of the transistor is grounded;
the differential common source amplifier comprises a capacitor C 4 And capacitor C 5 Resistance R 10 Resistance R 11 Resistance R 12 Resistance R 13 And resistance R 14 Transistor M 10 Transistor M 11 And transistor M 12 Transmission line TL 2 And transmission line TL 3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 4 One end of which is connected with the output of the common-drain amplifier and the other end is connected with the transistor M 10 A gate electrode of (a); capacitor C 5 One end of (a) is connected to the transistor M 11 The other end of the grid electrode is grounded; resistor R 10 Series transmission line TL 2 Transmission line TL 2 The other end is connected with a power supply VDD; resistor R 11 Series transmission line TL 3 Transmission line TL 3 The other end is connected with a power supply VDD; resistor R 12 Is connected to the capacitor C 4 And transistor M 10 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 13 Is connected to the capacitor C 5 And transistor M 11 Is connected with the bias voltage V at the other end b7 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 14 One end of (a) is connected with the crystalBody tube M 12 The other end is connected with the bias voltage V b8 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 10 Drain electrode of (C) is connected with resistor R 10 The first output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 11 Drain connecting resistor R 11 The second output end of the differential common source amplifier is connected with the source electrode of the transistor M 12 A drain electrode of (2); transistor M 12 The source electrode of the transistor is grounded;
the output common-drain amplifier comprises a common-drain amplifier unit III, a common-drain amplifier unit IV and a capacitor C 8 And capacitor C 9 The method comprises the steps of carrying out a first treatment on the surface of the The common drain amplifier unit three comprises a capacitor C 6 Resistance R 15 And resistance R 16 Transistor M 13 And transistor M 14 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 6 One end of the third common-drain amplifier unit is connected with the first output end of the differential common-source amplifier, and the other end is connected with the transistor M 13 A gate electrode of (a); resistor R 15 One end of (a) is connected to the transistor M 13 Gate and capacitance C of (2) 6 The other end is connected with bias voltage V b9 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 16 One end of (a) is connected to the transistor M 14 The other end is connected with the bias voltage V b10 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M 13 The drain electrode of (2) is connected with the power supply VDD, and the source electrode is connected with the transistor M 14 The drain electrode of the third common drain amplifier unit is used as the output end of the third common drain amplifier unit; transistor M 14 The source electrode of the transistor is grounded;
the common drain amplifier unit IV and the common drain amplifier unit III have the same structure, and the input end of the common drain amplifier unit IV is connected with the second output end of the differential common source amplifier;
capacitor C 8 And capacitor C 9 The capacitance is the same; one end of the capacitor is connected with the output end of the common drain amplifier unit III, and the other end of the capacitor is used as a local oscillator first output end LO_OUT+; capacitor C 9 One end is connected with the output end of the common drain amplifier unit four, and the other end is used as a local oscillator second output end LO_OUT-.
4. An ultra wideband heterogeneous active mixer according to claim 3, wherein: the differential common source amplifier has symmetrical structure and a capacitor C 4 Resistance R 12 Transistor M 10 Resistance R 10 Transmission line TL 2 And capacitor C 5 Resistance R 13 Transistor M 11 Resistance R 11 Transmission line TL 3 Corresponding device parameters are the same.
5. An ultra wideband heterogeneous active mixer according to claim 3, wherein: the amplitude of the signals output by the local oscillator first output end LO_OUT+ and the local oscillator second output end LO_OUT-are the same, and the phase difference is 180 degrees.
6. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the gilbert mixer core includes a transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 Transistor M 5 Transistor M 6 And transistor M 7 Resistance R 1 Resistance R 2 Resistance R 3 Resistance R 4 Resistance R 5 Resistance R 6 And resistance R 7 Capacitance C 1 And capacitor C 2 ；
Transistor M 1 Gate of (d), transistor M 4 Gate and resistor R of (2) 3 One end of the local oscillator is connected with the first input end of the Gilbert mixer core; transistor M 2 Gate of (d), transistor M 3 Gate and resistor R of (2) 4 One end of the local oscillator is connected with the second input end of the Gilbert frequency mixing core; resistor R 3 The other end is connected with bias voltage V b1 Resistance R 4 The other end is connected with bias voltage V b2 ；
Transistor M 1 Drain of (d), transistor M 3 Drain of (d) and resistance R 1 Is connected to one end of transistor M 2 Drain of (d), transistor M 4 Drain of (d) and resistance R 2 Is connected with one end of the mixer core and then is used as an output end of the Gilbert mixer core; resistor R 1 And resistance R 2 The other end is connected with a power supply VDD;
transistor M 1 And transistor M 2 Source is connected with transistor M 5 Drain electrode connection of transistor M 3 And transistor M 4 Source is connected with transistor M 6 Is connected with the drain electrode of the transistor;
transistor M 5 Gate connection resistor R of (2) 5 One end of (2) and a capacitor C 1 Is one end of transistor M 6 Gate connection resistor R of (2) 6 One end of (2) and a capacitor C 2 Is a member of the group; transistor M 5 And transistor M 6 Is connected with the source of the transistor M 7 Is connected with the drain electrode of the transistor; transistor M 7 Grid electrode connection resistor R 7 The source electrode is grounded;
capacitor C 1 The other end is connected with the output end of the radio frequency input stage, the resistor R 5 The other end is connected with bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Capacitor C 2 Is grounded at the other end of the resistor R 6 Is connected with the other end of the bias voltage V b3 The method comprises the steps of carrying out a first treatment on the surface of the Resistor R 7 Is connected with the other end of the bias voltage V b4 ；
Bias voltage V b1 With bias voltage V b2 For switching control voltage between pass mode and mixing mode of ultra-wideband heterogeneous active mixer, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 As a mixer switching tube, a mixing function is realized.
7. The ultra wideband heterogeneous active mixer of claim 6, wherein: gilbert mixer core structure symmetry, transistor M 1 Transistor M 2 Transistor M 3 Transistor M 4 The parameters are the same; transistor M 5 And transistor M 6 The parameters are the same; resistor R 1 And resistance R 2 The parameters are the same, resistance R 3 And resistance R 4 The parameters are the same, resistance R 5 And resistance R 6 The parameters are the same; capacitor C 1 And capacitor C 2 The parameters are the same.
8. An ultra wideband heterogeneous active mixer as claimed in claim 1, wherein: the intermediate frequency outputThe stage includes common drain amplifier unit five, resistor R 23 Fourth-order low-pass filter and capacitor C 15 ；
The input end of the common drain amplifier unit five is connected with the output end of the Gilbert frequency mixing core, and the output end is connected with the resistor R 23 Is a member of the group; the common-drain amplifier unit five and the common-drain amplifier unit three have the same structure and resistance R 23 The other end of the filter is connected with the input end of the fourth-order low-pass filter; the output end of the fourth-order low-pass filter is connected with a capacitor C 15 Is a member of the group; capacitor C 15 The other end of the intermediate frequency output stage is connected with the output end of the intermediate frequency output stage;
the fourth-order low-pass filter comprises an inductance L 1 Capacitance C 13 Inductance L 2 And capacitor C 14 Inductance L 1 Is used as the input end of the fourth-order low-pass filter to be connected with the resistor R 23 The other end is connected with an inductor L 2 And a capacitor C 13 Is one end of the inductance L 2 One end of (2) and a capacitor C 14 One end of the capacitor C is connected to the output end of the fourth-order low-pass filter 13 And the other end of (C) and the capacitor C 14 The other ends of the two wires are respectively grounded.
CN202310101467.4A 2023-01-30 2023-01-30 Ultra-wideband heterogeneous active mixer Pending CN116155206A (en)

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