CN112936091A - Polishing solution anti-splash device, chemical mechanical polishing system and polishing method - Google Patents
Polishing solution anti-splash device, chemical mechanical polishing system and polishing method Download PDFInfo
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- CN112936091A CN112936091A CN202110175153.XA CN202110175153A CN112936091A CN 112936091 A CN112936091 A CN 112936091A CN 202110175153 A CN202110175153 A CN 202110175153A CN 112936091 A CN112936091 A CN 112936091A
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- baffle
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- polishing pad
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/04—Protective covers for the grinding wheel
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a polishing solution splash-proof device, a chemical mechanical polishing system and a polishing method, wherein the polishing solution splash-proof device is arranged on the peripheral side of a polishing disk in a surrounding manner; the first baffle, the second baffle and the third baffle are respectively provided with a lifting device, and the lifting devices independently control the baffles to move along the vertical direction so as to shield the sputtered polishing solution; the first baffle, the second baffle and the third baffle are arc-shaped plates which are concentrically arranged, and the inner side walls of the baffles are positioned on the same concentric circle.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a polishing solution splash-proof device, a chemical mechanical polishing system and a polishing method.
Background
The integrated circuit industry is the core of the information technology industry and plays a key role in the process of upgrading the boosting manufacturing industry to digitalization and intellectualization transformation. The chip is a carrier of an integrated circuit, and the chip manufacturing relates to the process flows of chip design, wafer manufacturing, wafer processing, electrical property measurement, cutting packaging, testing and the like. Wherein, the chemical mechanical polishing belongs to the wafer manufacturing process.
Chemical Mechanical Polishing (CMP) is a globally planarized ultra-precise surface processing technique. Chemical mechanical polishing generally attracts a wafer to a bottom surface of a carrier head, the surface of the wafer having a deposition layer is pressed against an upper surface of a polishing pad, and the carrier head rotates in the same direction as the polishing pad under the actuation of a driving assembly and gives a downward load to the wafer; meanwhile, the polishing solution is supplied to the upper surface of the polishing pad and distributed between the wafer and the polishing pad, so that the chemical mechanical polishing of the wafer is completed under the combined action of chemistry and machinery.
In order to prevent the polishing solution on the polishing pad from splashing to the outside under the action of centrifugal force during the polishing process, a polishing solution baffle plate needs to be arranged on the outer side of the polishing disk. For example, patent CN202240852U discloses a slurry baffle, which can block the slurry splashed out and make the slurry flow down along the inner surface of the slurry baffle body for concentrated discharge, so as not to pollute the polishing environment. However, the polishing solution baffle has the following defects:
(1) the polishing solution baffle is provided with a plurality of lifting driving devices, and the lifting driving devices have the problem of asynchronous movement, so that the polishing solution baffle is lifted and clamped;
(2) the polishing solution baffle is a large annular component, and needs to be aligned with a point position of the base during installation, so that the installation convenience of the polishing solution baffle is influenced to a certain extent;
(3) the slurry baffle needs to be raised or lowered as a whole, and the carrier head and the dresser move out of synchronization, which is not favorable for blocking the sputtering of the slurry.
(4) For the sweeping of the adaptive dresser, notches are required to be arranged at the corresponding positions of the polishing liquid baffle plates, and the polishing liquid baffle plates are also not beneficial to blocking the sputtering of the polishing liquid.
Disclosure of Invention
The present invention aims to solve at least to some extent one of the technical problems existing in the prior art.
To this end, the embodiment of the invention provides a slurry splash guard, which is circumferentially arranged on the outer peripheral side of a polishing disk and comprises a first baffle plate, a second baffle plate and a third baffle plate, wherein the first baffle plate is arranged on the outer peripheral side of the polishing disk at intervals, and the second baffle plate and the third baffle plate are arranged between adjacent first baffle plates; the first baffle, the second baffle and the third baffle are respectively provided with a lifting device, and the lifting devices independently control the baffles to move along the vertical direction so as to shield the sputtered polishing solution; the first baffle, the second baffle and the third baffle are arc-shaped plates which are concentrically arranged, and the inner side walls of the baffles are positioned on the same concentric circle.
In a preferred embodiment, the central angle of the first baffle is larger than the central angles of the second baffle and the third baffle.
As a preferred embodiment, the first baffle, the second baffle and the third baffle are plastic plates, and the plastic plates extend along the vertical direction and then extend obliquely towards the inner side of the arc plate.
As a preferred embodiment, the first baffle, the second baffle and the third baffle are made of polypropylene, and comprise a vertical section formed by extending along the vertical direction and an extension section formed by extending from the upper end of the vertical section to the inner side of the circular arc plate through a circular arc, and the projection length of the extension section on the horizontal plane is 5mm-20 mm.
In a preferred embodiment, a gap is provided between the outer end faces of the second baffle plate and the third baffle plate and the outer end face of the first baffle plate, so as to avoid interference of vertical movement of the second baffle plate and the third baffle plate on the first baffle plate.
In a preferred embodiment, the transverse width of the second baffle plate is matched with the external dimension of the carrier head, and the second baffle plate is arranged at a position corresponding to the horizontal moving position of the carrier head; the transverse width of the third baffle is matched with the external dimension of the trimming head, and the setting position of the third baffle corresponds to the position of the sweeping path of the trimming head.
As a preferred embodiment, the inner side walls of the first baffle, the second baffle and the third baffle are coated with hydrophilic coatings to adsorb polishing liquid sputtered to the inner side walls; the hydrophilic coating is a polyvinylpyrrolidone coating or a dimethylacetamide coating, and the thickness of the coating is 0.01-0.5 um.
In addition, the invention also provides a chemical mechanical polishing system, which comprises a polishing disk, a polishing pad, a bearing head, a trimmer and a liquid supply part; the polishing pad is arranged on the upper surface of the polishing disc and rotates along the axis together with the polishing disc; a horizontally movable carrier head disposed above the polishing pad, the lower surface of the carrier head receiving a substrate to be polished; the dresser comprises a dressing arm and a dressing head, the dressing arm and the dressing head are arranged on one side of the polishing disk, and the dresser drives the rotating dressing head to swing so as to dress the surface of the polishing pad; the liquid supply part is arranged on the upper side of the polishing pad to distribute the polishing liquid on the surface of the polishing pad; the polishing solution splash-proof device is arranged on the outer peripheral side of the polishing disc in a surrounding mode so as to shield liquid splashed in the polishing operation process.
Meanwhile, the invention also discloses a chemical mechanical polishing method, which uses the chemical mechanical polishing system, and comprises the following steps:
s1, the first baffle, the second baffle and the third baffle move to a high position, the polishing disk rotates around the axis, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s2, stopping spraying deionized water by the liquid supply part, moving the second baffle to a low position, horizontally moving the carrier head with the wafer sucked to the upper side of the polishing pad through the upper side of the second baffle, moving the second baffle to a high position, supplying polishing liquid to the polishing pad by the liquid supply part, and carrying out chemical mechanical polishing by the carrier head;
s3, after the wafer polishing is finished by the bearing head, the second baffle plate moves to a low position, the bearing head sucking the wafer horizontally moves away from the polishing pad, the second baffle plate moves to a high position, the third baffle plate moves to a low position, and the dresser drives the rotary dressing head to swing above the polishing pad through the upper side of the third baffle plate; the third baffle is moved to a high position, the dresser dresses the polishing pad, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad.
Furthermore, the present invention provides a chemical mechanical polishing method using the chemical mechanical polishing system described above, comprising:
s10, the first baffle, the second baffle and the third baffle move to a high position, the polishing disk rotates around the axis, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s20, stopping spraying deionized water by the liquid supply part, moving the second baffle and the third baffle to a low position, horizontally moving the bearing head with the sucked wafer to the position above the polishing pad through the upper side of the second baffle, driving the rotary trimming head to swing to the position above the polishing pad through the upper side of the third baffle by the trimmer, moving the second baffle and the third baffle to a high position, supplying polishing liquid to the polishing pad by the liquid supply part, carrying out chemical mechanical polishing by the bearing head, and carrying out trimming by the trimmer on the polishing pad;
s30, after the wafer polishing is finished by the bearing head, the second baffle and the third baffle move to the low position, the bearing head which finishes the wafer polishing moves to the outer side of the polishing pad horizontally, the dresser drives the rotary dressing head to swing to the outer side of the polishing pad through the upper side of the third baffle, the second baffle and the third baffle move to the high position, and the liquid supply part sprays deionized water towards the polishing pad to remove surface impurities and wet the surface of the polishing pad.
The beneficial effects of the invention include:
(1) the first baffle, the second baffle and the third baffle are arranged separately and controlled independently, and the lifting of the corresponding baffles can be controlled and adjusted according to the process flow requirements, so that the sputtering of polishing solution and other fluids is effectively blocked;
(2) the top of the baffle is provided with an extension section which inclines inwards and upwards, so that the effect of preventing polishing solution from sputtering is enhanced;
(3) the inside wall of baffle sets up hydrophilic coating, is favorable to the attached of polishing solution, avoids once more to splash to the polishing pad and influences polishing effect.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only, and which do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic view of a splash guard according to the present invention;
FIG. 2 is a top view of a slurry splash guard according to the present invention;
FIG. 3 is a schematic structural view of a first baffle of the present invention;
FIG. 4 is a schematic diagram of a chemical mechanical polishing system according to the present invention;
FIG. 5 is a flow chart of a chemical mechanical polishing method of the present invention;
FIG. 6 is a flow chart of another embodiment of a chemical mechanical polishing method of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and Wafer (Wafer) is also referred to as Substrate (Substrate), which means equivalent to actual effects.
According to the structure of the polishing solution splash guard 100 provided by the invention, as shown in fig. 1, the polishing solution splash guard 100 is circumferentially arranged on the outer peripheral side of a polishing disc and comprises a first baffle 10, a second baffle 20 and a third baffle 30, the first baffle 10 is arranged on the outer peripheral side of the polishing disc at intervals, and the second baffle 20 and the third baffle 30 are arranged between adjacent first baffles 10. In the embodiment shown in fig. 1, the slurry splash guard 100 is provided with two first shutters 10 which are disposed at intervals on the outer circumferential side of the polishing platen. It will be readily appreciated that a certain distance, for example 10mm to 30mm, needs to be provided between the stop plate and the peripheral wall of the polishing disk to prevent the stop plate from interfering with the rotational movement of the polishing disk. It should be noted that, for convenience of description and illustration, the first baffle 10, the second baffle 20, and the third baffle 30 may be collectively referred to as baffles.
Further, the first baffle 10, the second baffle 20, and the third baffle 30 are respectively provided with a lifting device 40, as shown in fig. 1, which independently controls the baffles to move in the vertical direction to shield the sputtered polishing liquid. The lifting device 40 can adopt structural forms such as a cylinder, a linear motor, a servo motor and the like to realize the movement of the baffle plate along the vertical direction. Elevating gear 40 can drive the baffle rebound to high position, and at this moment, the last edge of baffle exceeds the top surface of polishing pad to avoid throwing away too far and forming the crystallization in a plurality of positions of polishing unit under the centrifugal force effect of polishing solution, this is unfavorable for the control of chemical mechanical polishing operation environment, disturbs polishing process's stability. Meanwhile, the lifting device 40 can drive the baffle to move downwards to a low position, and at the moment, the upper edge of the baffle is lower than or equal to the top surface of the polishing pad, so that the operator can conveniently perform other operations.
As an embodiment of the present invention, the first baffle plate 10, the second baffle plate 20 and the third baffle plate 30 are arc-shaped plates which are concentrically arranged and the inner side walls of the baffle plates are located on the same concentric circle, as shown in fig. 2. It can be understood that the inner sidewalls of the first, second, and third barriers 10, 20, and 30 are combined to block the polishing liquid from being sputtered to the outside.
Further, the central angle of the first barrier 10 is larger than the central angles of the second barrier 20 and the third barrier 30. That is, the lateral width of the first barrier 10 is greater than the lateral widths of the second and third barriers 20 and 30. During chemical mechanical polishing, the first baffle 10 is basically in a high position under the action of the lifting device 40, and the second baffle 20 and the third baffle 30 can flexibly set lifting actions according to the requirements of process steps, so that the problem that the whole lifting of the baffles influences the anti-sputtering effect in the prior art is solved, and the polishing solution is effectively prevented from being sputtered to the outside.
As another embodiment of the present invention, the first barrier 10, the second barrier 20, and the third barrier 30 are plastic plates that extend in the vertical direction and are inclined toward the inner side of the circular arc plate. In some embodiments, the first baffle 10, the second baffle 20 and the third baffle 30 are made of polypropylene, and include a vertical section extending in the vertical direction and an extension section extending from the upper end of the vertical section toward the inner side of the circular arc plate through a circular arc, and the projection length of the extension section in the horizontal plane is 5mm to 20 mm.
Fig. 3 is a schematic structural diagram of the first baffle 10 of the present invention, the first baffle 10 includes a vertical section 10a extending in the vertical direction and an extended section 10b extending from the upper end of the vertical section 10a toward the inner side of the circular arc plate through a circular arc, and the horizontal projection length of the extended section 10b is 10mm to enhance the anti-sputtering capability of the first baffle 10.
Further, inner sidewalls of the first, second, and third barriers 10, 20, and 30 are coated with a hydrophilic coating to adsorb the polishing liquid sputtered to the inner sidewalls, preventing the polishing liquid from being back-sputtered again to the polishing pad. In one aspect of this embodiment, the hydrophilic coating can be a polyvinylpyrrolidone coating or a dimethylacetamide coating having a coating thickness of 0.01 to 0.5 um. As a variation of the present embodiment, the first baffle 10, the second baffle 20, and the third baffle 30 may also be directly made of a material having hydrophilicity, such as polyurethane, quartz, or the like.
As an embodiment of the present invention, the second baffle 20 is provided with a gap from the outer end surface of the first baffle 10, and the outer end surface of the third baffle 30 is provided with a gap from the outer end surface of the first baffle 10, so that the interference of the vertical movement of the second baffle 20 and the third baffle 30 with the first baffle 10 can be avoided. It is understood that the gap between the second barrier 20 and the first barrier 10 and the gap between the third barrier 30 and the first barrier 10 need to be set to be particularly small, such as 2mm to 5mm, to avoid the polishing liquid from being thrown out of the gap between the barriers as much as possible.
In the embodiment shown in fig. 1, the second shutter 20 has a lateral width that matches the outer dimensions of the carrier head and is positioned relative to the horizontal travel position of the carrier head. Specifically, the lateral width of the second baffle 20 is 5mm to 10mm greater than the lateral width of the carrier head to avoid interference with the baffles by horizontal movement of the carrier head. Meanwhile, the third baffle 30 has a lateral width matching the outer dimension of the finishing head, and is disposed at a position corresponding to the position of the sweep path of the finishing head. In particular, the third baffle 30 has a lateral width 5mm-10mm greater than the lateral width of the trimmer head to avoid interference of the trimmer sweep with the baffles.
Meanwhile, the invention also provides a chemical mechanical polishing system, which has a schematic structural diagram as shown in FIG. 4. The polishing apparatus 1000 includes a polishing pad 200, a carrier head 300, a dresser 400, a liquid supply part 500, and a slurry splash guard 100 disposed around an outer circumferential side of the polishing pad to shield liquid splashed during a polishing work. The polishing pad 200 is disposed on the upper surface of the polishing disk and rotates therewith along the axis Ax; a horizontally movable carrier head 300 disposed above the polishing pad 200, the lower surface of which receives a substrate to be polished; the dresser 400 includes a dressing arm and a dressing head, which are disposed at one side of the polishing disk, and drives the rotating dressing head to swing to dress the surface of the polishing pad 200; the liquid supply part 500 is provided at an upper side of the polishing pad 200 to distribute the polishing liquid to the surface of the polishing pad 200.
During polishing operation, the carrier head 300 presses the surface of the substrate to be polished against the surface of the polishing pad 200, and the carrier head 300 performs rotation and reciprocating movement along the radial direction of the polishing disk to gradually remove the surface of the substrate contacting the polishing pad 200; while the polishing pad is rotated, the liquid supply part 500 sprays polishing liquid onto the surface of the polishing pad 200. The substrate is rubbed against the polishing pad 200 by the relative movement of the carrier head 300 and the polishing pad under the chemical action of the polishing liquid to perform polishing.
Polishing liquid consisting of submicron or nanometer abrasive particles and chemical solution flows between a substrate and a polishing pad 200, the polishing liquid is uniformly distributed under the action of transmission and rotating centrifugal force of the polishing pad 200 to form a layer of liquid film between the substrate and the polishing pad 200, chemical components in the liquid and the substrate generate chemical reaction to convert insoluble substances into easily soluble substances, then the chemical reactants are removed from the surface of the substrate through micro-mechanical friction of the abrasive particles and dissolved into the flowing liquid to be taken away, namely surface materials are removed in the alternate process of chemical film forming and mechanical film removing to realize surface planarization treatment, thereby achieving the purpose of global planarization.
During chemical mechanical polishing, the dresser 400 is used to dress and activate the topography of the polishing pad 200. The dresser 400 is used to remove foreign particles remaining on the surface of the polishing pad, such as abrasive particles in the slurry and waste materials released from the surface of the substrate, and also to planarize the surface deformation of the polishing pad 200 caused by the polishing, thereby ensuring the uniformity of the surface topography of the polishing pad 200 during the polishing process and stabilizing the removal rate.
In addition, the present invention also discloses a chemical mechanical polishing method, which uses the chemical mechanical polishing system, and the flow chart thereof, as shown in FIG. 5, comprises the following steps:
s1, the first barrier 10, the second barrier 20, and the third barrier 30 are moved to the high position, the polishing pad is rotated around the axis, and the liquid supply part 500 sprays deionized water toward the polishing pad 200 to remove impurities on the surface thereof and wet the surface of the polishing pad 200;
s2, the liquid supply part 500 stops spraying the deionized water, the second barrier 20 moves to a low position, the carrier head 300 with the wafer sucked thereon horizontally moves to a position above the polishing pad 200 through the upper side of the second barrier 20, the second barrier 20 moves to a high position, the liquid supply part 500 supplies the polishing liquid toward the polishing pad 200, and the carrier head 300 performs the chemical mechanical polishing;
s3, after the wafer polishing is finished by the carrier head 300, the second baffle 20 moves to the low position, the carrier head 300 with the wafer sucked in moves horizontally away from the polishing pad 200, the second baffle 20 moves to the high position, the third baffle 30 moves to the low position, and the dresser 400 drives the rotary dressing head to swing above the polishing pad 200 through the upper side of the third baffle 30; the third baffle 30 is moved to the high position, the dresser 400 performs pad dressing, and the liquid supply part 500 sprays deionized water toward the pad 200 to remove surface impurities thereof.
According to the chemical mechanical polishing method, the first baffle 10 is always in a high position in the polishing process, the lifting of the second baffle 20 and the third baffle 30 is flexibly adjusted according to the requirements of the process steps, and the anti-sputtering effect of the baffles is effectively improved.
Meanwhile, the invention also discloses a chemical mechanical polishing method which also has the beneficial effect of improving the sputtering prevention of the baffle. Fig. 6 is a flow chart of the method, which includes the steps of:
s10, the first barrier 10, the second barrier 20, and the third barrier 30 are moved to the high position, the polishing pad is rotated around the axis, and the liquid supply part 500 sprays deionized water toward the polishing pad 200 to remove impurities on the surface thereof and wet the surface of the polishing pad 200;
s20, the liquid supply unit 500 stops spraying deionized water, the second barrier 20 and the third barrier 30 move to a low position, the carrier head 300 with the wafer attracted thereon horizontally moves above the polishing pad 200 through the upper side of the second barrier 20, the dresser 400 drives the rotating dressing head to swing above the polishing pad 200 through the upper side of the third barrier 30, the second barrier 20 and the third barrier 30 move to a high position, the liquid supply unit 500 supplies polishing liquid to the polishing pad 200, the carrier head 300 performs chemical mechanical polishing, and the dresser 400 performs polishing pad dressing;
s30, after the carrier head 300 finishes polishing the wafer, the second barrier 20 and the third barrier 30 move to the lower position, the carrier head 300 finishes polishing the wafer horizontally moves to the outer side of the polishing pad 200, the dresser 400 drives the rotating dressing head to swing to the outer side of the polishing pad through the upper side of the third barrier 30, the second barrier 20 and the third barrier 30 move to the higher position, and the liquid supply part 500 sprays deionized water toward the polishing pad 200 to remove impurities on the surface and wet the surface of the polishing pad.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The polishing solution splash-proof device is arranged on the outer peripheral side of the polishing disk in a surrounding manner and is characterized by comprising a first baffle plate, a second baffle plate and a third baffle plate, wherein the first baffle plate is arranged on the outer peripheral side of the polishing disk at intervals, and the second baffle plate and the third baffle plate are arranged between the adjacent first baffle plates; the first baffle, the second baffle and the third baffle are respectively provided with a lifting device, and the lifting devices independently control the baffles to move along the vertical direction so as to shield the sputtered polishing solution; the first baffle, the second baffle and the third baffle are arc-shaped plates which are concentrically arranged, and the inner side walls of the baffles are positioned on the same concentric circle.
2. The slurry splash guard of claim 1, wherein a central angle of the first baffle is greater than a central angle of the second and third baffles.
3. The slurry splash guard of claim 1, wherein the first, second, and third baffles are plastic plates that extend in a vertical direction and then extend obliquely toward an inner side of the circular arc plate.
4. The slurry splash guard of claim 3, wherein the first baffle, the second baffle and the third baffle are made of polypropylene and comprise a vertical section extending in a vertical direction and an extension section extending from an upper end of the vertical section toward an inner side of the circular arc plate through a circular arc, and a projection length of the extension section in a horizontal plane is 5mm to 20 mm.
5. The slurry splash guard of claim 3, wherein the outer end surfaces of the second baffle and the third baffle are spaced from the outer end surface of the first baffle to avoid interference with the first baffle from vertical movement of the second baffle and the third baffle.
6. The slurry splash guard of claim 1, wherein the second baffle has a lateral width that matches an outer dimension of the carrier head and is positioned relative to a horizontal travel position of the carrier head; the transverse width of the third baffle is matched with the external dimension of the trimming head, and the setting position of the third baffle corresponds to the position of the sweeping path of the trimming head.
7. The slurry splash guard of claim 1, wherein inner sidewalls of the first baffle, the second baffle, and the third baffle are coated with a hydrophilic coating to absorb slurry sputtered to the inner sidewalls; the hydrophilic coating is a polyvinylpyrrolidone coating or a dimethylacetamide coating, and the thickness of the coating is 0.01-0.5 um.
8. A chemical mechanical polishing system is characterized by comprising a polishing disk, a polishing pad, a bearing head, a dresser and a liquid supply part; the polishing pad is arranged on the upper surface of the polishing disc and rotates along the axis together with the polishing disc; a horizontally movable carrier head disposed above the polishing pad, the lower surface of the carrier head receiving a substrate to be polished; the dresser comprises a dressing arm and a dressing head, the dressing arm and the dressing head are arranged on one side of the polishing disk, and the dresser drives the rotating dressing head to swing so as to dress the surface of the polishing pad; the liquid supply part is arranged on the upper side of the polishing pad to distribute the polishing liquid on the surface of the polishing pad; the anti-splash device for polishing solution of any claim 1 to 7, which is arranged around the outer circumference of the polishing disk to shield the liquid splashed during the polishing operation.
9. A chemical mechanical polishing method using the chemical mechanical polishing system of claim 8, comprising:
s1, the first baffle, the second baffle and the third baffle move to a high position, the polishing disk rotates around the axis, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s2, stopping spraying deionized water by the liquid supply part, moving the second baffle to a low position, horizontally moving the carrier head with the wafer sucked to the upper side of the polishing pad through the upper side of the second baffle, moving the second baffle to a high position, supplying polishing liquid to the polishing pad by the liquid supply part, and carrying out chemical mechanical polishing by the carrier head;
s3, after the wafer polishing is finished by the bearing head, the second baffle plate moves to a low position, the bearing head sucking the wafer horizontally moves away from the polishing pad, the second baffle plate moves to a high position, the third baffle plate moves to a low position, and the dresser drives the rotary dressing head to swing above the polishing pad through the upper side of the third baffle plate; the third baffle is moved to a high position, the dresser dresses the polishing pad, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad.
10. A chemical mechanical polishing method using the chemical mechanical polishing system of claim 8, comprising:
s10, the first baffle, the second baffle and the third baffle move to a high position, the polishing disk rotates around the axis, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s20, stopping spraying deionized water by the liquid supply part, moving the second baffle and the third baffle to a low position, horizontally moving the bearing head with the sucked wafer to the position above the polishing pad through the upper side of the second baffle, driving the rotary trimming head to swing to the position above the polishing pad through the upper side of the third baffle by the trimmer, moving the second baffle and the third baffle to a high position, supplying polishing liquid to the polishing pad by the liquid supply part, carrying out chemical mechanical polishing by the bearing head, and carrying out trimming by the trimmer on the polishing pad;
s30, after the wafer polishing is finished by the bearing head, the second baffle and the third baffle move to the low position, the bearing head which finishes the wafer polishing moves to the outer side of the polishing pad horizontally, the dresser drives the rotary dressing head to swing to the outer side of the polishing pad through the upper side of the third baffle, the second baffle and the third baffle move to the high position, and the liquid supply part sprays deionized water towards the polishing pad to remove surface impurities and wet the surface of the polishing pad.
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| CN114367920A (en) * | 2021-12-29 | 2022-04-19 | 华海清科股份有限公司 | Polishing solution splash-proof device for chemical mechanical polishing and chemical mechanical polishing equipment |
| CN114952452A (en) * | 2022-04-19 | 2022-08-30 | 赛莱克斯微系统科技（北京）有限公司 | Polishing pad dresser, chemical mechanical polishing apparatus and method |
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Application publication date: 20210611 |