KR100359849B1 - Chemical mechanical polisher for manufacture of semiconductor - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus for manufacturing a semiconductor. The present invention relates to a pad 51 provided to be rotatable, and a wafer W 'clamped to an upper surface of the pad 51 to be in close contact with the pad 51. The head 57 which rotates the wafer W 'so that the polishing surface of the wafer W' is mechanically polished by the relative speed, and the pad 51 so that the polishing surface of the wafer W 'is chemically polished A slurry sprayer 61 for supplying the slurry S 'upwardly and installed along the edge of the pad 51 to prevent the slurry S' supplied above the pad 51 from escaping out of the pad 51; The slurry confinement wall 63 and the discharge means for discharging the slurry S 'from the pad after the polishing of the wafer W' is finished, so that the slurry out of the pad 51 during the polishing operation of the wafer W '( S ') is prevented from leaving so that the efficiency of use of the slurry (S') It is maximized, whereby the consumption of the slurry (S ') is minimized, according to a so increases the price competitiveness of the semiconductor.

Description

Chemical mechanical polishing apparatus for semiconductor manufacturing {CHEMICAL MECHANICAL POLISHER FOR MANUFACTURE OF SEMICONDUCTOR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus for semiconductor manufacturing, and more particularly, to a chemical mechanical polishing apparatus for semiconductor manufacturing having a structure capable of preventing the separation of slurry out of a pad.

In a general semiconductor manufacturing process, the wafer is planarized using a rotational coating method or a chemical mechanical polishing method as a means of overcoming the limitation of the exposure process. Among the two methods described above, the rotary coating method has a tendency to use a chemical mechanical polishing method because of limitations on the planarization of the wafer and contamination problems such as chemical materials used.

The chemical mechanical polishing method described above is a method of polishing a wafer on a polishing cloth using an abrasive, and the wafer is planarized by chemical hydration reaction of the abrasive (slurry) and mechanical polishing by the polishing cloth (pad). Global flatness and local flatness are achieved at the same time.

1 is a cross-sectional front view of a chemical mechanical polishing apparatus for semiconductor manufacturing according to the prior art, and FIG. 2 is a cross-sectional view illustrating a principle of polishing a wafer by a chemical mechanical polishing apparatus for semiconductor manufacturing according to the prior art.

1 and 2, the chemical mechanical polishing apparatus for semiconductor manufacturing according to the prior art will be described.

First, when the wafer W is clamped by the head 1, the head 1 is moved upward of the pad 5 to closely adhere the polishing surface of the wafer W to the top surface of the pad 5. In this case, the pad 5 is installed above the support 7 and is supported and fixed by the support 7.

Subsequently, when the head 1 and the support 7 are rotated by the respective rotation shafts 3 and 9 at the same direction and at different speeds, the head 1 and the support 7 are rotated between the polishing surface of the wafer W and the contact surface of the pad 5. The frictional force due to the relative speed between the head 1 and the pad 5 is generated so that the polishing surface of the wafer W is mechanically polished.

At this time, as shown in FIG. 3, when the pattern P is formed on the polishing surface of the wafer W, more pressure is applied to the photosensitive film F positioned at the uneven portion of the pattern P, thereby polishing the portion. Is further advanced, which results in local planarization with planarization of the entire wafer (W).

As described above, the polishing surface of the wafer W is mechanically polished by the pad 5, and the slurry S is supplied to the pad 5 by the slurry sprayer 11. The slurry S thus supplied is provided. Is penetrated between the pad 5 and the head 1 to cause a hydration reaction on the surface of the wafer W so that the polishing surface of the wafer W is chemically polished.

Therefore, the polishing surface of the wafer W is polished mechanically and chemically at the same time, so that the entire surface of the wafer W is planarized and locally planarized together, thereby overcoming the limitation of the exposure process caused by the high integration trend of the semiconductor. .

In this case, the planarization of the wafer W can be controlled evenly through the development of a conditioner, and the slurry S is a chemical material that causes a chemical reaction with the deposition film of the wafer W. Along with the function of the abrasive, the function as a lubricant is also performed at the same time.

However, the conventional chemical mechanical polishing apparatus for semiconductor manufacturing as described above has a problem in that a large proportion of the cost of the entire semiconductor is due to the high cost of materials because it uses a lot of consumable materials.

In particular, in the conventional chemical mechanical polishing apparatus, only a part of the slurry S supplied onto the pad 5 for chemical polishing of the wafer W polishing surface penetrates between the pad 5 and the head 1, and thus the wafer. It is used for the polishing of (W), and since most of the remaining flows out of the pad 5 by centrifugal force, there is a problem in that the use efficiency of the slurry S is lowered and a lot of expensive slurry S is used.

In addition, the conventional chemical mechanical polishing apparatus has a serious problem of contamination of the equipment due to the slurry (S), such as the slurry (S) flowing out of the pad (5) is buried in the peripheral equipment and solidified.

The object of the present invention devised in view of the problems described above, the chemical mechanical for semiconductor manufacturing to increase the price competitiveness of the semiconductor by minimizing the consumption of the slurry by preventing the separation of the slurry out of the pad to maximize the use efficiency of the slurry In providing a polishing apparatus.

1 is a front sectional view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to the prior art,

2 is a cross-sectional view showing the principle that the wafer is polished by a chemical mechanical polishing apparatus for semiconductor manufacturing according to the prior art,

3 is a front sectional view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present invention;

4 is a perspective view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present invention;

5 is an exploded perspective view illustrating main parts of a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present disclosure;

6 is a plan view showing the structure of a pad according to an embodiment of the present invention;

7 is a front sectional view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

51, 151: pad 53: support

57, 157: head 61, 161: slurry sprayer

63, 163: slurry confinement walls 65a, 65b: connection member

67: discharge groove 69: discharge pipe

71: groove 71a: annular groove

71b: Spiral groove 71c: Reverse spiral groove

In order to achieve the object of the present invention as described above, the wafer so that the pad is rotatably coupled to the upper surface of the pad by clamping the wafer and the polishing surface of the wafer is mechanically polished by the relative speed with the pad. A slurry sprayer for supplying a slurry onto the pad so that the polishing surface of the wafer is chemically polished, and a slurry trapped along the edge of the pad to keep the slurry supplied over the pad from leaving the pad. Provided is a chemical mechanical polishing apparatus for manufacturing a semiconductor, comprising: a slurry discharging means having a wall, a discharge groove formed along an edge on an upper surface of the pad, and a discharge pipe connected to the discharge groove.

In addition, according to the present invention, there is provided a pad provided to be rotatable, a head for clamping the wafer to the upper surface of the pad to be in close contact with the pad, and rotating the wafer such that the polishing surface of the wafer is mechanically polished by a relative speed with the pad, In the chemical mechanical polishing apparatus for semiconductor manufacturing including a slurry sprayer for supplying a slurry over the pad so that the polishing surface of the wafer is chemically polished, the pad is formed in a conical shape of the convex shape of the lower side of the center so that the slurry supplied over the pad There is provided a chemical mechanical polishing apparatus for semiconductor fabrication configured to be prevented from escaping out of the pad.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

3 is a front sectional view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present invention, Figure 4 is a perspective view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present invention, Figure 5 is An exploded perspective view illustrating main parts of a chemical mechanical polishing apparatus for manufacturing a semiconductor according to an embodiment of the present invention, and FIG. 6 is a plan view illustrating a structure of a pad according to an embodiment of the present invention.

3 to 5, the chemical mechanical polishing apparatus for manufacturing a semiconductor according to the present invention includes a pad 51 provided to be rotatable, and a wafer W 'clamped to an upper surface of the pad 51 to closely contact the pad 51. And the head 57 for rotating the wafer W 'so that the polishing surface of the wafer W' is mechanically polished by the relative speed with the pad 51, and the polishing surface of the wafer W ' A slurry sprayer 61 for supplying the slurry S 'onto the pads 51 so as to be polished with the pads, and the pads to keep the slurry S' supplied over the pads 51 from leaving the pads 51. The slurry confinement wall 63 provided along the edge of the 51 and discharge means for discharging the slurry S 'from the pad 51 after polishing of the wafer W' is completed.

In the above, the pad 51 is supported and fixed to the upper side of the support 53 provided to be rotatable by the rotation shaft 55.

In addition, the discharge means is a slurry confinement to the pad 51 by operating at least one connection member (65a) (65b) and one end connected to the slurry confinement wall (63) and the connection member (65a) (65b) A driving means for attaching and detaching the wall 63 and a position corresponding to the lower surface of the slurry confinement wall 63 in the pad 51, and the slurry confinement wall 63 is separated from the pad 51. The discharge groove 67 is opened, and the discharge pipe 69 is connected to the discharge groove 67 to discharge the slurry (S ').

Here, the discharge groove 67 is a ring-shaped groove formed on the upper surface of the pad 51, and is open to the side of the pad 51 so that one side thereof is connected to the discharge pipe (69).

In addition, as shown in FIG. 6, the upper surface of the pad 51 is grooved in a shape that resists the centrifugal force so as to prevent the slurry S ′ supplied on the pad 51 from moving outward by the centrifugal force. 71 is formed.

Here, the groove 71 has a plurality of annular grooves 71a formed in a shape in which concentric circles coinciding with the center of the pad 51 are arranged at predetermined intervals, and at the center of the pad 51. It extends outward and consists of a plurality of spiral grooves 71b intersecting with the annular groove 71a.

In addition, an inverse spiral groove 71c having a shape extending in a direction opposite to the spiral groove 71b is formed at a portion where the annular groove 71a and the spiral groove 71b cross each other, thereby being inverse to the spiral groove 71b. The spiral groove 71c forms a double spiral structure.

The chemical mechanical polishing apparatus for semiconductor manufacture according to the present invention configured as described above operates as follows.

First, when the wafer W 'is clamped by the head 57, the head 57 is moved upward of the pad 51 to closely adhere the polishing surface of the wafer W' to the top surface of the pad 51. . In this case, the pad 51 is installed above the support 53 and is supported and fixed by the support 53.

Subsequently, when the head 57 and the support 53 are rotated by the respective rotation shafts 59 and 55 at the same direction and at different speeds, between the polishing surface of the wafer W 'and the contact surface of the pad 51. A frictional force due to the relative speed between the head 57 and the pad 51 is generated to mechanically polish the polishing surface of the wafer W '.

At this time, when the pattern is formed on the polishing surface of the wafer W ', more pressure is applied to the photosensitive film positioned at the uneven portion of the pattern, so that the polishing of the portion is further progressed, whereby the whole of the wafer W' Local planarization is achieved with planarization.

As described above, the polishing surface of the wafer W 'is mechanically polished by the pad 51, and the slurry S' is supplied to the pad 51 by the slurry sprayer 61. S 'penetrates between the pad 51 and the head 57 to cause a hydration reaction on the surface of the wafer W', thereby chemically polishing the polishing surface of the wafer W '.

At this time, since the slurry confinement wall 63 is provided at the edge of the pad 51, the slurry S ′ supplied onto the pad 51 is prevented from flowing out of the pad 51 by centrifugal force.

Therefore, once the appropriate amount of slurry S 'is supplied onto the pad 51, the slurry S' is continuously stored on the pad 51, so that a small amount of tens to hundreds of wafers W 'are supplied. It is possible to grind with only the slurry (S ').

In addition, since the grooves 71 are formed on the upper surface of the pads 51 to resist centrifugal force, the slurry S 'is not moved to the outside of the pads 51 by the grooves 71. W ') is moved to maximize the use efficiency of the slurry (S').

As described above, the polishing surface of the wafer W 'is polished mechanically and chemically at the same time, so that the entire surface of the wafer W' is planarized and locally planarized together, thereby overcoming the limitation of the exposure process caused by the high integration trend of the semiconductor. It becomes possible.

Subsequently, when the slurry S 'is polished on the tens or hundreds of wafers W', and the function is completed, the slurry S 'is operated from the pad 51 by operating the connecting members 65a and 65b through the driving means. The slurry confinement wall 63 is separated. That is, the slurry confinement wall 63 is lifted from the pad 51 using the connecting members 65a and 65b.

When the slurry confinement wall 63 is separated from the pad 51 as described above, the discharge groove 67 formed at the edge of the pad 51 is opened and stored on the pad 51 by the slurry confinement wall 63. The slurry S 'which has been made flows into the discharge groove 67.

Thereafter, the slurry S ′ flowing into the discharge groove 67 is moved along the discharge groove 67 and discharged to the outside through the discharge pipe 69. As such, when the discharge of the slurry S 'is completed, the connection members 65a and 65b are operated again through the driving means to couple the slurry confinement wall 63 onto the pad 51.

As described above, when the slurry confinement wall 63 is coupled to the pad 51, and the discharge groove 67 is blocked by the lower surface of the slurry confinement wall 63, the slurry confinement wall 63 is again placed on the pad 51 through the slurry sprayer 61. Fresh slurry (S ') is fed and stored. Thereafter, the above process is repeated.

On the other hand, Figure 7 is a front sectional view showing a chemical mechanical polishing apparatus for manufacturing a semiconductor according to another embodiment of the present invention, with reference to this another embodiment of the present invention is installed to be rotatable and the center is convex downwards The pad 151 formed in a conical shape of the pad and the upper surface of the pad 151 by clamping the wafer (W ') in close contact with each other, and the polishing surface of the wafer (W') by the relative speed with the pad 151 is mechanically A head 157 for rotating the wafer W 'to be polished, a slurry sprayer 161 for supplying the slurry S' over the pad 151 so that the polishing surface of the wafer W 'is chemically polished, When the polishing of the wafer (W ') is finished, the discharge means for discharging the slurry (S') from the pad 151.

When the pad 151 is formed in a conical shape as described above, it is possible to control the centrifugal force generated by the rotation of the pad 151, thereby preventing the slurry (S ') out of the pad 151 due to the centrifugal force, thereby preventing the slurry. The use of (S ') can be enhanced.

In addition, the slurry confinement wall 163 may be installed at the edge of the pad 151 to more effectively prevent the separation of the slurry (S '). Other configurations and operations are similar to the above-described embodiment.

As described above, in the chemical mechanical polishing apparatus for manufacturing a semiconductor according to the present invention, the slurry S 'may be maximized by preventing separation of the slurry S' out of the pad 51 and thus the slurry S 'may be maximized. ) Consumption is minimized, which increases the price competitiveness of semiconductors.

In addition, in the present invention, when a small amount of the slurry (S ') is supplied once, the above-mentioned slurry (S') can be reused to polish tens or hundreds of wafers (W '), thereby reducing material costs and polishing the wafer (W'). There is an advantage that the uniformity of is improved.

In addition, the present invention prevents the slurry (S ') out of the pad 51 is removed, the contamination of the peripheral equipment by the slurry (S') is removed to improve the cleanliness of the equipment and its maintenance / management advantages There is this.

Claims (7)

A pad provided to be rotatable, a head for clamping the wafer to an upper surface of the pad to be in close contact with the pad, and a head for rotating the wafer so that the polishing surface of the wafer is mechanically polished by a relative speed with the pad; A slurry atomizer for supplying slurry over the pad to be polished with a slurry, a slurry confinement wall installed along the edge of the pad to trap the slurry supplied over the pad from leaving the pad, and a discharge formed along the edge on the upper surface of the pad Chemical mechanical polishing apparatus for manufacturing a semiconductor, characterized in that consisting of a slurry discharge means having a discharge pipe connected to the groove and the discharge groove. delete The method of claim 1, And a groove formed on the upper surface of the pad so as to resist the centrifugal force so that the slurry supplied on the pad is prevented from moving outward by the centrifugal force. The method of claim 3, wherein The groove includes a plurality of annular grooves formed in a shape in which the centers of the pads and concentric circles coinciding with the centers are arranged with a predetermined distance therebetween, and a plurality of spiral grooves extending outward from the center of the pads and intersecting with the annular grooves. Chemical mechanical polishing apparatus for semiconductor production, characterized in that consisting of. The method of claim 4, wherein The reverse spiral groove extending in the opposite direction to the spiral groove is formed at the portion where the annular groove and the spiral groove cross, so that the spiral groove and the reverse spiral groove form a double spiral structure. Polishing device. A pad provided to be rotatable, a head for clamping the wafer to an upper surface of the pad to be in close contact with the pad, and a head for rotating the wafer so that the polishing surface of the wafer is mechanically polished by a relative speed with the pad; A chemical mechanical polishing apparatus for manufacturing a semiconductor comprising a slurry sprayer for supplying a slurry over a pad to be polished with And the pad is formed in a conical shape having a central convex shape to prevent the slurry supplied over the pad from escaping out of the pad. The method of claim 6, Chemical mechanical polishing apparatus for manufacturing a semiconductor, characterized in that the slurry confinement wall is installed at the edge of the pad to more effectively prevent the separation of the slurry.