GB2362592A - Polishing pad and slurry feed - Google Patents

Polishing pad and slurry feed Download PDF

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Publication number
GB2362592A
GB2362592A GB0107744A GB0107744A GB2362592A GB 2362592 A GB2362592 A GB 2362592A GB 0107744 A GB0107744 A GB 0107744A GB 0107744 A GB0107744 A GB 0107744A GB 2362592 A GB2362592 A GB 2362592A
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United Kingdom
Prior art keywords
polishing
slurry
fossae
nonconcentric
recited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0107744A
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GB0107744D0 (en
Inventor
Annette Margaret Crevasse
William Graham Easter
John Albert Maze
Frank Miceli
Sailesh Mansinh Merchant
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Agere Systems LLC
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Agere Systems Guardian Corp
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Publication of GB0107744D0 publication Critical patent/GB0107744D0/en
Publication of GB2362592A publication Critical patent/GB2362592A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A polishing body 410 & 510 comprises a pad having a plurality of geometrically shape fossae (230a-c, Figs. 2A-2C) formed non-concentrically in its polishing surface 415 & 515. Slurry may fed to the fossae through delivery ports 516 & 517 connected to an annular conduit 530 coupled to a lower surface of a platen 512 on which the pad is mounted. Alternatively, slurry may be fed to the fossae via a plurality of radial channels 456 (& 356, Fig. 3B) embedded in the body 410 (& 310, Fig. 3B). These channels may extend outwardly into the body from its centre and be connected to a slurry source (360, Fig. 3B) via a stationary hub (314, Fig. 3B) around which the body rotates. Alternatively, these channels 456 may extend inwardly into the body 410 from its circumference and be connected to a slurry source 460 via an annular ring 411 which surrounds the body 410. The fossae may be circular or polygonal (e.g. hexagonal) pits or depressions or intersecting grooves.

Description

2362592 1 ENGINEERED POLISHING PAD FOR IMPROVED SLURRY DISTRIBUTION
CROSS-REFERENCE TO RE1-kTED APPLICATION
This application is a continuation in part of U.S.
Patent Application Serial No. 09/357,407, filed on July 20, 1999, entitled "Engineered Polishing Pad for Improved Slurry Distribution" to Easter, et al., which is incorporated herein by reference.
TECHNICAL FIELD OF THE INVENTION
The present invention is directed, in general, to a semiconductor wafer polishing apparatus and, more specifically, to engineered designs for semiconductor wafer polishing pads to provide more even slurry distribution during chemical/mechanical planarization of semiconductor wafers.
13ACKGROUND OF THE INVENTION In the fabrication of semiconductor components, the various devices are formed in layers upon an underlying substrate, such as silicon. In such semiconductor components, it is desirable that all layers, including insulating layers, have a smooth surface topography, since it is difficult to lithographically image and pattern layers applied to rough surfaces.
Conventional chemical/mechanical polishing (CMP) has been developed for providing smooth semiconductor topographies. Typically, a given semiconductor wafer may be planarized several times, such as upon completion of each metal layer.
The CMP process involves holding, and optionally 2 rotating, a thin, reasonably flat, semiconductor wafer against a rotating polishing platen. The wafer may be repositioned radially within a set range on the polishing platen as the platen is rotated. The polishing surface, which is conventionally a polyurethane pad affixed to the polishing platen, is wetted by a chemical slurry, under controlled chemical, pressure, and temperature conditions. The chemical slurry contains selected chemicals which etch or oxidize selected surfaces of the wafer during processing in preparation for their mechanical removal. Additionally, the slurry contains a polishing agent, such as alumina or silica, that is used as the abrasive material for the physical removal of the semiconductor material. The combination of chemical etching/oxidation and mechanical removal of material during polishing results in superior planarization of the polished surface. In this process it is important to remove a sufficient amount of material to provide a smooth surface, without removing an excessive amount of underlying materials.
Accurate material removal is particularly important in today's submicron technologies where the layers between device and metal levels are constantly getting thinner.
For CMP to be most effective, the slurry must remain in essentially uniform contact with the face of the semiconductor wafer being polished. If one portion of the wafer becomes 'starved"' of slurry, the chemical/mechanical planarization process becomes essentially a mechanical process relying upon the abrasive qualities of the contact between the wafer surface and the polishing platen with 3 whatever mechanical abrasive remains. Referring now to FIGUREs 1A and 1B, current polishing pads 101, 102 are either open cell polyurethane (FIGURE 1A) or configured with a series of concentric grooves 110 (e.g., K- grooveek) by Rodel) (FIGURE 1B) to minimize slurry starvation. The operating concept is that the slurry will remain in the grooves or the perforations, and thus be held essentially uniformly against the semiconductor wafer. However, empirical evidence indicates that these designs are lacking in providing the essential uniform slurry distribution. Therefore, the wafers are not uniformly planarized, and more material is typically removed from the dies near the periphery of the wafer, most probably because the chemical action of the slurry is more effective in that area. Thus, the wafers have a convex surface when viewed from an edge. of course, this affects die uniformity across the wafer, as well as wafer yield and manufacturing costs.
Accordingly, what is needed in the art is an engineering design for a semiconductor wafer polishing pad that assures a more uniform distribution of slurry under a semiconductor wafer during chemical/mechanical planarization.
SUMMARY OF THE INVENTION
To address the above-discussed deficiencies of the prior art, the present invention provides a polishing pad and a method for manufacturing the polishing pad; the polishing pad comprising a polishing body having a polishing surface and a plurality of nonconcentric fossae
1 4 formed in the polishing surface and having a geometric shape. In one embodiment, the geometric shape is a circle, however in an alternative embodiment, the geometric shape may be polygon, such as a hexagon.
Thus in a broad scope, the present invention provides a polishing pad that has a plurality of geometric nonconcentric fossae formed therein. The geometric fossae provide an even distribution of a polishing slurry across the surface of the polishing pad to allow for a more even polishing process across the surface of a semiconductor wafer.
The polygon, in one embodiment, comprises walls extending from the polishing surface and about the plurality of nonconcentric fossae. In a further aspect of this embodiment,'the polishing pad comprises a plurality of embedded radial channels formed in the polishing body that are couplable to a slurry source. The plurality of embedded radial channels are coupled to at least some of the plurality of nonconcentric fossae via channel extensions transverse the embedded radial channels and extending to the polishing surface.
In an alternative embodiment, the plurality of nonconcentric fossae comprises intersecting grooves in the polishing surface forming discrete bosses that extend from the polishing surface. In another variation, the polishing pad comprises a plurality of embedded radial channels formed in the polishing body and couplable to a slurry source. The plurality of embedded radial channels are couplable to at least some of the intersecting grooves via channel extensions extending to the polishing surface.
In another variation, the plurality of nonconcentric fossae is couplable to a slurry source proximate a center of the polishing body. Alternatively, the plurality of nonconcentric fossae is couplable to a slurry source proximate a periphery of the polishing body. The polishing pad, in another embodiment, further comprises a polishing platen coupleable to the polishing pad, and an annular slurry conduit coupled to a lower surface of the polishing platen. The slurry delivery ports are formed through the polishing platen such that the slurry delivery ports are in fluid communication with the plurality of nonconcentric fossae. The annular slurry conduit is in fluid communication between a slurry source and the slurry delivery ports with the annular slurry conduit and the slurry delivery ports configured to conduct a polishing slurry from the slurry source to the plurality of nonconcentric fossae.
In yet another embodiment, the polishing pad comprises a slurry source having a slurry pump couplable to the plurality of nonconcentric fossae. The slurry pump is configured to deliver the polishing slurry to the plurality of nonconcentric fossae.
The foregoing has outlined, rather broadly, preferred and alternative features of the present invention so that those skilled in the art may better understand the detailed description of the invention that follows. Additional features of the invention will be described hereinafter that form the subject of the claims of the
6 invention. Those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiment as a basis for designing or modifying other structures for carrying out the same purposes of the present invention. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the invention in its broadest form.
BRIEF DESCRIPTION OF THE DRAWINGS
For a more complete understanding of the present invention, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIGURE 1A illustrates a conventional open cell polyurethane polishing pad; FIGURE 1B illustrates a conventional polishing pad having a series of concentric grooves; FIGURE 2A illustrates a plan view of one embodiment of a polishing pad constructed according to the principles of the present invention; FIGURE 2B illustrates a plan view of an alternative embodiment of the polishing pad of FIGURE 2A; FIGURE 2C illustrates a plan view of an alternative embodiment of the polishing pad of FIGURE 2B; FIGUREs 3A and 3B illustrate plan and partial sectional views of an alternative embodiment of the polishing pad of FIGUREs 2A and 2B; FIGUREs 4A and 4B illustrate plan and partial sectional views of another alternative embodiment of the 7 polishing pad of FIGUREs 2A and 2B; and FIGUREs 5A and 5B illustrate plan and partial sectional views of an alternative embodiment of the polishing pad of FIGUREs 4A and 4B.
DETAILED DESCRIPTION
For the purpose of this discussion, fossae are defined as pits, grooves, or depressions in a surface of a polishing body. Referring now to FIGURE 2A, illustrated is a plan view of one embodiment of a polishing pad 200a constructed according to the principles of the present invention. The polishing pad 200a comprises a polishing body 210a having a polishing surface 215a, and a slurry delivery system 220a formed in the polishing body 210a. The polishing pad 200a rests upon and is coupled to a polishing platen 212. In the illustrated embodiment, the slurry delivery system 220a comprises a plurality of nonconcentric fossae 231a, 232a, collectively designated 230a, having a geometric shape. In this particular embodiment, the geometric shape is a circle.
Referring now to FIGURE 2B, illustrated is a plan view of an alternative embodiment 200b of the polishing pad of FIGURE 2A. In this embodiment, the polishing pad 200b comprises a polishing body 210b, a polishing surface 215b, and a slurry delivery system 220b formed in the polishing body 210b analogous to those similar elements of FIGURE 2A. In the illustrated embodiment, the slurry delivery system 220b comprises a plurality of nonconcentric fossae 231b, 232b, collectively designated 230b having a geometric shape, which in this particular 8 embodiment, is a polygon, and more specifically, the polygonal shape is that of a hexagon. of course, one who is skilled in the art will realize that the polygonal shape may have from 3 to n sides. However, it has been found that hexagonal shapes lend themselves well to the chemical/mechanical polishing environment. Certainly, the arrangement of polygonal shapes having other than six sides will inherently vary the layout of the shapes and wall thicknesses somewhat. 10 Therefore, the discussion that follows will concentrate on the hexagonal shape. In the illustrated embodiment, the plurality of nonconcentric fossae 230b comprises intersecting grooves 231b, 232b in the polishing surface 215b forming discrete hexagonal bosses, representatively 15 241b, 242b, collectively designated 240b. The discrete hexagonal bosses 240b extend upward from the polishing surface 215b. Slurry deposited upon this embodiment 200b of a slurry delivery system 220b will tend to be held among the raised bosses 240b as the polishing proceeds. 20 As the intersecting grooves 230b are neither radial, nor concentric, slurry (not shown) on the polishing surface 215b of the polishing pad 200b will tend to be held in place against the centrifugal forces generated as the platen 212 and polishing pad 200b rotate; thereby assuring adequate slurry under a semiconductor wafer, representatively designated 250, for the chemical/mechanical planarization process. Referring now to FIGURE 2C, illustrated is a plan view of an alternative embodiment 200c of the polishing 9 pad of FIGURE 2B. In this embodiment, a slurry delivery system 220c comprises a plurality of nonconcentric fossae 231c, 232c, collectively designated 230c, surrounded by walls, representatively 241c, 242c, and collectively 240c.
Slurry deposited upon this embodiment 200c of a slurry delivery system 220c will tend to be held in the fossae 230c as the polishing proceeds, thereby assuring adequate slurry for the chemical/mechanical planarization process. of course, the size of the nonconcentric fossae 230a, 230b, 230c may be varied by one who is skilled in the art to accommodate the needs of various slurry/wafer combinations.
Referring now to FIGUREs 3A and 3B, illustrated are plan and partial sectional 'views of an alternative embodiment of the polishing pads of FIGUREs 2A and 2B. In this embodiment, a polishing pad 300 comprises a polishing body 310 having a polishing surface 31S, and a slurry delivery system 320 formed in the polishing body 310. The slurry delivery system 320 further comprises a plurality of embedded radial channels 351-358, collectively designated 3SO, formed in the polishing body 310 and couplable to a slurry source 360 and a slurry pump 362.
The plurality of embedded radial channels 350 is coupled to at least some of the plurality of nonconcentric fossae 231b, 232b via channel extensions 371, 372, collectively 370, transverse the embedded radial channels 350 and extending to the polishing surface 315. The plurality of radial channels 350 embedded in the polishing body 310 extends from proximate a center 301 to proximate a circumference 303 of the polishing body 310. The plurality of radial channels 350 is couplable to the slurry source 360 and slurry pump 362 through a hub 314 of the polishing body 310. Slurry then may flow, as indicated at arrow system 340, under controlled pressure through the hub 314, through the embedded radial channels 350, through the channel extensions 370 to the polishing surface 315. Thus, the amount of slurry 361 at the polishing site 380 may be controlled by pressure created by the slurry pump 362. While the present illustration shows the slurry supply 360 connected through a hub 314 of the platen 312, one who is skilled in the art will quickly recognize that a conventional mechanism may also be used to supply slurry to the upper surface (polishing surface 315) of the polishing body 310.
To more efficiently deliver slurry to the polishing site 380, the hub 314 may be stationary while the platen 312 and polishing pad 300 rotate. Each radial channel 351-358 has a corresponding port 351a-358a (only 356a shown). Slurry is pumped under pressure from the slurry pump 362 through ports 351a-358a as they align with rotating radial channels 350, thereby placing slurry 361 directly under the polishing site 350, and preventing slurry starvation. Of course, more than one polishing site 380 may also be employed on a single polishing pad 300 and platen 312. While the polishing pad 200b shown in FIGUREs 3A and 3B is that of FIGURE 2B, one who is skilled in the art will readily understand that the polishing pad 200a of FIGURE 2A may likewise be employed with the radial 11 channels 350 of FIGUREs 3A and 3B.
Referring now to FIGUREs 4A and 4B, illustrated are plan and partial sectional views of another alternative embodiment of the polishing pad of FIGUREs 2A and 2B. A polishing pad 400 comprises a polishing body 410 and a slurry delivery system 420 formed in the polishing body 410. Similarly to the embodiment of FIGUREs 3A and 3B, the slurry delivery system 420 comprises a plurality of radial channels 451-458, collectively 450, embedded in the polishing body 410. However, in this embodiment, the plurality of radial channels 4SO extends from proximate a center 401 to a circumference 403 of the polishing body 410. The slurry delivery system 420 further comprises channel extensions 423, 424 transverse to and intersecting the plurality of radial channels 450, and extending to the polishing surface 415. The plurality of radial channels 450 is couplable to a slurry source 460 and slurry pump 462 through a port 440 in annular ring 411 adjacent the polishing body 410. Slurry then may flow, as indicated at arrow system 470, under pressure controlled by the slurry pump 462 through the port 440, inwardly through the plurality of radial channels 450, through the channel extensions 423, 424 to the polishing surface 41S. Thus, the amount of slurry 461 at the polishing site 480, may be controlled by the slurry supply 460 and delivery pressure developed by the slurry pump 462. of course, the number and position of ports 440 may be adjusted as needed to accommodate a number of polishing sites 480 through slurry supply system 420 and to optimize the polishing apparatus 12 performance. Referring now to FIGUREs 5A and 5B, illustrated are plan and partial sectional views of an alternative embodiment of the polishing pad of FIGUREs 4A and 4B. A 5 polishing pad 500 comprises a polishing body 510, and a slurry delivery system 520 formed in the polishing body 510. A plurality of radial channels 551-558, collectively designated 550, extends from proximate a center 501 to proximate a circumference 503 of the polishing body S10.
An annular slurry conduit S30 is coupled to a lower surface 514 of a polishing platen 512 and is substantially the same width 531 as a diameter 581 of a semiconductor wafer S80 being polished. In this embodiment, slurry S61 delivered from a slurry source 560 is directed by a slurry pump 562 to a polishing surface 515 along arrow route 570 through slurry delivery ports 516, 517 in the platen 512.
Thus, various embodiments of engineered polishing pads have been described that comprise a plurality of nonconcentric fossae having polygonal shape. In a particularly advantageous embodiment, the polygonal shape is hexagonal. The nonconcentric hexagonal fossae effectively cause slurry to be retained or delivered to locations under semiconductor wafers being polished, precluding slurry starvation of the wafer. Moreover while certain channel patterns comprising eight radial channels have been discussed, it should be readily apparent from the present disclosure that various other channel patterns and numbers of channels are also within the scope of the present invention for providing slurry to the plurality of
13 nonconcentric fossae having polygonal form.
Although the present invention has been described in detail, those skilled in the art should understand that they can make various changes, substitutions and alterations herein without departing from the spirit and scope of the invention in its broadest form.
14

Claims (24)

  1. CLAIMS:
    A polishing pad, comprising:
    polishing body having a polishing surface; and plurality of nonconcentric fossae formed in the polishing surface and having a geometric shape.
  2. 2. The polishing pad as recited in Claim 1 wherein the geometric shape is a circle.
  3. 3. The polishing pad as recited in Claim 1 wherein the geometric shape is a polygon.
  4. 4. The polishing pad as recited in Claim 3 wherein the polygon is a hexagon.
  5. 5. The polishing pad as recited in Claim 1 wherein the geometric shape comprises walls extending from the polishing surface and about the plurality of nonconcentric fossae.
  6. 6. The polishing pad as recited in Claim 5 further comprising a plurality of embedded radial channels formed in the polishing body and couplable to a slurry source, the plurality of embedded radial channels coupled to at least some of the plurality of nonconcentric fossae via channel extensions transverse the embedded radial channels and extending to the polishing surface.
  7. 7. The polishing pad as recited in Claim 1 wherein the plurality of nonconcentric fossae comprises intersecting grooves in the polishing surface forming discrete bosses, the discrete bosses extending from the polishing surface.
  8. 8. The polishing pad as recited in Claim 7 further comprising a plurality of embedded radial channels formed is in the polishing body and couplable to a slurry source, the plurality of embedded radial channels couplable to at least some of the intersecting grooves via channel extensions extending to the polishing surface. 5
  9. 9. The polishing pad as recited in Claim 1 wherein the plurality of nonconcentric fossae are couplable to a slurry source proximate a center of the polishing body.
  10. 10. The polishing pad as recited in Claim 1 wherein the plurality of nonconcentric fossae are couplable to a slurry source proximate a periphery of the polishing body.
  11. 11. The polishing pad as recited in Claim 1 further comprising:
    a polishing platen couplable to the polishing pad; slurry delivery ports formed through the polishing platen, the slurry delivery ports in fluid communication with the plurality of nonconcentric fossae; and an annular slurry conduit coupled to a lower surface of the polishing platen, the annular slurry conduit in fluid communication between a slurry source and the slurry delivery ports, the annular slurry conduit and the slurry delivery ports configured to conduct a polishing slurry from the slurry source to the plurality of nonconcentric fossae.
  12. 12. The polishing pad as recited in Claim 1 further comprising a slurry source having a slurry pump couplable to the polishing body and configured to deliver the polishing slurry to the plurality of nonconcentric fossae.
  13. 13. A method of manufacturing a polishing pad, comprising: forming a polishing body having a polishing 16 surface; and forming a plurality of nonconcentric fossae in the polishing surface, the nonconcentric fossae having a geometric shape.
    i
  14. 14. f orming forming a geometric
  15. 15.
    forming forming The method as recited in Claim 13 wherein a plurality of nonconcentric fossae includes plurality of nonconcentric fossae wherein the shape is a circle. The method as recited in Claim 13 wherein plurality of nonconcentric fossae includes plurality of nonconcentric fossae wherein the geometric shape is a polygon.
  16. 16. The method as recited in Claim 15 wherein forming a plurality of nonconcentric fossae wherein the geometric shape is a polygon includes forming a plurality of nonconcentric fossae wherein the geometric shape is a hexagon.
  17. 17. The method as recited in Claim 13 wherein forming a plurality of nonconcentric fossae includes forming a plurality of nonconcentric fossae comprising walls extending from the polishing surface and about the plurality of nonconcentric fossae.
  18. 18. The method as recited in Claim 17 further comprising forming a plurality of embedded radial channels in the polishing body and couplable to a slurry source, and coupling the plurality of embedded radial channels to at least some of the plurality of nonconcentric fossae via channel extensions transverse the embedded radial channels and extending to the polishing surface.
    17
  19. 19. The method as recited in Claim 13 further comprising forming intersecting grooves in the polishing surface forming discrete bosses, the discrete bosses extending from the polishing surface.
  20. 20. The method as recited in Claim 19 further comprising forming a plurality of embedded radial channels in the polishing body and couplable to a slurry source, and coupling the plurality of embedded radial channels to at least some of the intersecting grooves via channel extensions extending to the polishing surface.
  21. 21. The method as recited in Claim 131 wherein forming a plurality of nonconcentric fossae includes forming a plurality of nonconcentric fossae wherein the plurality of nonconcentric fossae are couplable to a slurry source proximate a center of the polishing body.
  22. 22. The method as recited in Claim 13 wherein the plurality of nonconcentric fossae are couplable to a slurry source proximate a periphery of the polishing body.
  23. 23. The method as recited in Claim 13 further comprising:
    forming slurry delivery ports through a polishing platen; coupling the polishing platen to the polishing pad, the slurry delivery ports in fluid communication with the plurality of nonconcentric fossae; and coupling an annular slurry conduit to a lower surface of the polishing platen, the annular slurry conduit in fluid communication between a slurry source and the slurry delivery ports, the annular slurry conduit and the slurry 18 delivery ports configured to conduct a polishing slurry from the slurry source to the plurality of nonconcentric fossae.
  24. 24.. The method as recited in Claim 13 further comprising coupling a slurry source having a slurry pump couplable to the polishing body and configuring the slurry pump to deliver the polishing slurry to the plurality of nonconcentric fossae.
GB0107744A 2000-03-29 2001-03-28 Polishing pad and slurry feed Withdrawn GB2362592A (en)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11446788B2 (en) 2014-10-17 2022-09-20 Applied Materials, Inc. Precursor formulations for polishing pads produced by an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads
US11724362B2 (en) 2014-10-17 2023-08-15 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US11772229B2 (en) 2016-01-19 2023-10-03 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11958162B2 (en) 2014-10-17 2024-04-16 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential
US11986922B2 (en) 2015-11-06 2024-05-21 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US12023853B2 (en) 2019-12-02 2024-07-02 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10667426B2 (en) * 2018-09-25 2020-05-26 Apple Inc. Housing construction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2257382A (en) * 1991-07-09 1993-01-13 Intel Corp Composite polishing pad for semiconductor processing
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5658185A (en) * 1995-10-25 1997-08-19 International Business Machines Corporation Chemical-mechanical polishing apparatus with slurry removal system and method
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980045527U (en) * 1996-12-27 1998-09-25 김영환 Chemical mechanical polishing equipment
JPH1158218A (en) * 1997-08-12 1999-03-02 Nikon Corp Abrasive pad and polishing device
JP2000033553A (en) * 1998-05-11 2000-02-02 Sony Corp Polishing pad and polishing method
JP2918883B1 (en) * 1998-07-15 1999-07-12 日本ピラー工業株式会社 Polishing pad
KR20000008937A (en) * 1998-07-18 2000-02-15 류흥목 Method and apparatus for polishing wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
GB2257382A (en) * 1991-07-09 1993-01-13 Intel Corp Composite polishing pad for semiconductor processing
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process
US5658185A (en) * 1995-10-25 1997-08-19 International Business Machines Corporation Chemical-mechanical polishing apparatus with slurry removal system and method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11446788B2 (en) 2014-10-17 2022-09-20 Applied Materials, Inc. Precursor formulations for polishing pads produced by an additive manufacturing process
US11724362B2 (en) 2014-10-17 2023-08-15 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US11958162B2 (en) 2014-10-17 2024-04-16 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential
US11986922B2 (en) 2015-11-06 2024-05-21 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US11772229B2 (en) 2016-01-19 2023-10-03 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11980992B2 (en) 2017-07-26 2024-05-14 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads
US12023853B2 (en) 2019-12-02 2024-07-02 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

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