KR100524118B1 - Cmp(chemical-mechanical polish) machines and fabrication process using the same - Google Patents

Abstract

Chemical-mechanical polish (CMP) equipment and manufacturing processes using the equipment are disclosed. CMP equipment has a retainer ring. The retainer ring has a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further includes a circular passage. The wafer is planarized inside the CMP equipment by supplying the slurry through the slurry passages and the circular passage.

Description

CMP equipment and manufacturing process using it {CMP (CHEMICAL-MECHANICAL POLISH) MACHINES AND FABRICATION PROCESS USING THE SAME}

TECHNICAL FIELD The present invention relates to semiconductor manufacturing techniques, and more particularly to improvements in retainer rings for use on polishing heads of CMP equipment that receive semiconductor wafers in position during a chemical-mechanical polish (CMP) process. It is about the structure which became.

In semiconductor manufacturing, CMP techniques are widely used for the overall planarization of semiconductor wafers used in the manufacture of very large-scale integration (VLSI) and ultra large-scale integration (ULSI) integrated circuits.

1A and 1B are schematic diagrams showing conventional CMP equipment. The conventional CMP apparatus includes a polishing table 10, a polishing pad 12 forming a layer on the table 10, a polishing head 14 for receiving a semiconductor wafer 16 at a predetermined position, and the A nozzle 18 is provided for supplying a certain amount of slurry to the semiconductor wafer during the CMP process.

1C shows a detailed internal structure of the polishing head 14. As shown, the polishing head 14 is provided with air compression means 20 capable of applying air pressure to a wafer loader 22 which receives the wafer 16 during the CMP process. A retainer ring 24 is provided around the loader 22 and the wafer 16 to allow the wafer 16 to be placed at a predetermined position during the CMP process. Further, a cushion pad (not shown) is located between the wafer 16 and the loader 22.

2A and 2B show the structure of a conventional retainer ring 24. According to the retainer ring structure of FIGS. 2A and 2B, the slurry is fed under the polishing head 14 for polishing. That is, the slurry is fed over the surface of the wafer to be polished. However, since there is no suitable conduit or passage of the retainer head, the slurry is unevenly distributed over the surface of the wafer. It is known that such slurries do not naturally circulate on the wafer surface. Thus, problems arise that the range of the wafer edge falls short of it, the removal rate of the reject is low, the use of slurry is inefficient, and the service life of the cushion pad is shortened. The surface flatness of the wafer as a result of the CMP process treatment using the retainer rings of FIGS. 2A and 2B is shown in FIG. 3. 3 shows the wafer thickness at various points on a straight line through the spinning center of the wafer. 3, it can be seen that the flatness of the wafer is very poor. The standard deviation of the wafer thickness is approximately 5.06%.

It is therefore an object of the present invention to provide a new retainer ring for use in a polishing head of a CMP apparatus, wherein the retainer ring is used to uniformly distribute the slurry on the surface of the wafer polished by the polishing head of the CMP apparatus during the CMP process. To provide. Another object of the present invention is to provide a fabrication process for a wafer, in which the wafer is planarized by a CMP method using a CMP apparatus with a new retainer ring in order to obtain an excellent plane.

For the above and other objects of the present invention, the present invention provides a new retainer ring for use in the polishing head of the CMP equipment. The retainer ring has a plurality of slurry passages formed at the bottom edge of the retainer ring. The slurry passages have the same width, and each of the slurry passages is radially inclined such that an acute angle of impact is formed with respect to the slurry outside the retainer ring as the retainer ring rotates.

The retainer ring according to the first preferred embodiment of the present invention is formed to have a plurality of straight grooves of the same width around the bottom of the retainer ring and each of the straight grooves is formed when the retainer ring rotates. The impact angle is inclined radially with respect to the slurry outside the retainer ring to form an acute angle.

The retainer ring according to the second preferred embodiment of the present invention, in addition to the plurality of linear grooves described above, at least one circular groove that intersects with all of the linear grooves between the outside and the inside of the retainer ring. It is formed to have a (circular groove). The straight grooves according to the invention arranged at equal intervals thus allow the slurry to be sucked into the retainer ring from all radial directions so as to spread the slurry evenly on the wafer inside the retainer ring. In addition, the circular groove functions to partially relieve the flow of the slurry sucked through the linear grooves, the slurry flows into the circular groove. This flow relaxed slurry is fed to the edge portions of the wafer close to the inner ends of the straight grooves.

The slurry passages according to the third preferred embodiment of the invention are designed to gradually expand for slurry from the inlet to the outlet of the slurry passage. Has a diffusion angle between 0 and 10 degrees, the angle of impact X is the minimum distance between the tangent line of the slurry passage inlet point and the tangent line of the outlet point and l is the passage length of each of the slurry passages.

The retainer ring according to the fourth preferred embodiment of the present invention is formed by the combination of the slurry passages and the circular passage according to the second preferred embodiment of the present invention.

In order to achieve the above objects of the present invention, a manufacturing process is also provided. To planarize the wafer with the deposition layer, the wafer is arranged inside the polishing head so that the surface of the wafer is directed to the polishing table. The wafer is received inside the polishing head by a retainer ring having a plurality of slurry passages. A slurry is supplied from the slurry feeder and evenly distributed over the deposition layer through the slurry passages of the retainer ring. A manufacturing process is provided to achieve the objects by rotating the polishing table and spinning the polishing head.

According to another preferred embodiment of the present invention, a CMP process is provided. A deposition layer is formed on the wafer. Polishing the deposition layer using CMP equipment having a retainer ring, the retainer ring having a plurality of slurry passages extending from the inner surface to the outer surface of the retainer to distribute the slurry evenly over the deposition layer.

This provides an improved structure of the retainer ring used on the polishing head of the CMP machine. The improved structure of the retainer ring can evenly distribute the slurry onto the wafer. Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 4A and 4B.

<First preferred embodiment>

4A is a schematic plan view of a first preferred embodiment of a retainer ring 40 according to the present invention. 4B is a rear view of the retainer ring 40. The inner diameter of the retainer ring 40 has a range larger than 4 to 12 inches or 12 inches. However, retainer ring 40 functions to receive the semiconductor wafer during the CMP process. Thus, the substantial inner diameter of the retainer ring 40 depends on the size of the wafer being polished. As shown in FIG. 4B, the retainer ring 40 is formed with a plurality of slurry passages (paths, passages, conduits) 42. The sludge passages 42 may be grooves formed under the retainer rings, channels or tubes passing through the retainer rings, or recesses in other forms. . In this embodiment, straight grooves are applied that maintain substantially equally angular spacing around the retainer ring 40. Each of these slurry passages 42 has a radius such that its outer end guides its inner end to a position at an angle with respect to the direction of rotation of the retainer ring 40. Orient in the direction of maintaining a constant angle with respect to. During the polishing process, the retainer ring 40 is spun at the required speed. These slurry passages 42 have an acute impact angle with respect to the slurry on the outside of the retainer ring 40. Thus, the slurry is sucked into the retainer ring 40 through the slurry passages 42 when the retainer ring 40 rotates at high speed. 4B, the direction of the straight grooves 42 when the retainer ring 40 rotates counterclockwise is illustrated. In carrying out the implementation, each of these slurry passages 42 is formed to have a width of, for example, 0.05 to 0.3 mm and a depth of 2 to 4 mm. The slurry passages 42 are arranged at equal intervals so that the slurry can be sucked into the retainer ring 40 in all radial directions. As a result, the slurry is spread evenly on the wafer contained in the retainer ring.

6 and 7 show the flatness of the wafer as a result of the processing of the CMP process using the retainer rings of FIGS. 4A and 4B. The flatness is measured by a thickness value on a straight line passing through the center of the wafer. 6 and 7, it can be seen that it is very good compared to the wafer flatness shown in FIG. 3 obtained using the retainer ring of the prior art of FIGS. 2A and 2B. In the case of Fig. 6, the standard deviation of the thickness is 0.92% and in the case of Fig. 1.38%. All of these are very good compared to the standard deviation 5.06% in the case of FIG. However, as shown in FIG. 7, as shown in FIG. 7, since the edge portions of the wafer adjacent to the inner ends of the slurry passages 42 are supplied with the greatest amount of slurry than the other portions of the wafer, The thickness there is considerably thinner than the thickness of the other parts of the wafer. In conclusion, the thickness of the edge portions proximate to the slurry passages is significantly less than the thickness of the other portions of the wafer.

Second Preferred Embodiment

5a is a schematic plan view of a second preferred embodiment of a retainer ring according to the invention. In Fig. 5A, reference numeral 50 denotes a retainer ring. 5B is a rear view of the retainer ring 50.

As shown in FIG. 5B, the retainer ring 50 of this embodiment has a plurality of straight grooves (eg, ten straight grooves) 52 that maintain substantially the same angled spacing around them. It is partly identical to the previous embodiment in that it is formed to have. The direction in which each of these linear grooves 52 is directed is similar to that in the previous embodiment. Each of the grooves 52 is also formed to have a width of 0.1 mm and a depth of 2 to 4 mm, similarly to the previous embodiment. This embodiment differs from the previous embodiment in that at least one circular groove 54 intersects all of the linear grooves 52 and is formed between the outside and the inside of the retainer ring. The circular groove 54 functions to partially relieve the flow of the slurry sucked through the straight grooves 52, and the slurry flows into the circular groove 54. This flow relaxed slurry is supplied to the edge portions of the wafer close to the inner ends of the straight grooves 52. In this way, the polishing effect at the edge portions of the wafer is not too different from that at other portions of the wafer. In carrying out the implementation, the circular groove 54 is formed to have, for example, a standard similar to that of the linear grooves 52, that is, a width of 0.05 to 0.3 mm and a width of 2 to 4 mm.

The two preferred embodiments should be considered in practical terms. Even better planarization effects can be obtained in the formation of slurry passages or even in a buffer circular groove crossing the slurry passages with each other. However, in the above embodiments, there are no descriptions of parameters such as the detailed shape of the slurry passages, the angle of impact imprinted between the center line and the tangent line of the slurry passages, and the diffusion angle. In the following preferred embodiments are given in practical terms. The parameters are determined taking into account the slurry flow.

<Third Preferred Embodiment>

8A is a plan view of the retainer ring. In the retainer ring 80 according to the third preferred embodiment of the present invention, twelve slurry passages 82 are formed at the bottom thereof. Other optional numbers of slurry passageways according to specific needs for a given polishing process will be predictable by one of ordinary skill in the art. In the retainer ring 80 having an outer diameter of 25.40 cm and an inner diameter of 22.86 cm, the width of the retainer ring 80 is 25.40 cm-22.86 cm = 2.54 cm. The formation of the slurry passages 82 allows the slurry to flow into the retainer ring and to disperse over the surface of the wafer for polishing. As described above, the slurry passages 82 may be formed through tubes, grooves, channels, or guiding holes that penetrate through the entire width of the retainer ring 80. It can be formed into). The center angle between the two consecutive (two neighboring) slurry passages is represented by θ ₁ , and the impact angle of each of the slurry passages 82 is represented by φ ₁ . It is assumed that the diameter of the inner end of the slurry passage 82 is d ₂ , and the diameter of the outer end is d ₁ . 8B is a side view of the retainer ring 80 having slurry passages 82 formed with guiding holes.

Referring to FIG. 8C, when a center line is drawn through the center point of one slurry passage 82, the diffusion angle φ ₂ is defined as the angle between the center line and one perimeter (or boundary) of the slurry passage 82. .

9A-9D illustrate the mechanism of a polishing process using retainer ring 80 shown in FIGS. 8A-8C. The polishing table 90 has an angular velocity Rotate at and the distance between the center of the polishing table 90 and the center of the polishing head 94 Assume that the polishing head 94 At the radius of Spin at an angular velocity of. As shown in Figure 9a, if the angle is Θ ₃ between the j axis and If θ ₄ between the and j axes, any point point around the polishing head 90 is velocity Rotate with. The speed is calculated as follows.

= (r ₁ ω ₁ cosθ ₃ + r ₂ ω ₁ cosθ ₄ + r ₂ ω ₂ cosθ ₄ ) i-(r ₁ ω ₁ sinθ ₃ + r ₂ ω ₁ sinθ ₄ + r ₂ ω ₂ sinθ ₄ ) j

= Ai + Bj (1)

9B shows the operation of the retainer ring 80. It can be said that the operation of the retainer ring 80 moves equally at the same speed as the polishing head 94 shown in Fig. 9A. It can be said that the slurry passages are formed with its center line along the direction of the retainer ring 80 speed. As mentioned above, the speed In other words, the impact angle of the slurry passage is as follows.

Whereas the retainer ring 80 has a distance of at least 1.25 cm between the tangent line of the inlet point and the tangent point of the outlet point, the length l of the slurry passage is as follows.

Thus, the slurry passage can be designed by parameters derived from the relationships.

9C shows a slurry passage with a narrow inlet and a wide outlet. The slurry passageway has a larger inner end in cross-section than the outer end. With this design, the passage of the slurry flow gradually expands. And the actual pressure gradient and diversion of the slurry flow are reduced. The slurry is fed through the increased slurry passageway. As shown in the figures, P ₁ , A ₁ , and V ₁ represent the pressure, the cross-sectional area of the inlet, and the flow rate of the slurry flow at the inlet, respectively. On the other hand, P ₂ , A ₂ , and V ₂ represent the pressure, the cross-sectional area of the outlet, and the flow rate of the slurry flow at the outlet, respectively. It is assumed that the gravity of the slurry can be ignored between the slurry and the slurry passage, and the slurry cannot be compressed. If the diffusion angle is φ ₂ and ℓ is the passage length, the Bernoulli equation ignores the vortex of the slurry flow at the inlet, the barrier at the outlet, and all external vibrations. Thus, it can be applied as follows.

Where P is the pressure, ρ is the density, V is the velocity of the flow, and P ₀ is the stagnation pressure. By introducing equation (4), the resilience coefficient of pressure C _P is as follows.

From the continuous equation

A ₁ V ₁ = A ₂ V ₂ (6)

The elastic modulus of the pressure can be obtained as follows.

Therefore, the higher the C _P , the wider the A ₁ / A ₂ . In addition, it is conceivable that a wider value of A ₁ / A ₂ makes the diffusion angle φ ₂ wider and the slurry flow will become even more fluid. However, if the diffusion angle φ ₂ is increased by 10 degrees or more, the influence of stall tendency 91 or stall speed 93 is reduced. In addition, if it causes the backflow 95, the cross-sectional area is reduced.

As mentioned above, in order to design the slurry passage, the factors, i.e. (1) tanφ ₂ , (2) tanφ ₂ <10 °, and (3) A ₂ / A ₁ must be considered. Referring to FIG. 8A, the diameter d ₁ of the outer cross-sectional area of the slurry passage 82 of the retainer ring 80 having an outer diameter of 25.40 cm and an inner diameter of 22.86 cm is about 1 cm. On the other hand, the diameter d ₂ of the inner cross-sectional area of the slurry passage 82 is about 1.8 cm. The central angle θ ₁ between two neighboring slurry passages 82 is about 30 ° and the diffusion angle φ ₂ of each slurry passage is about 30 °.

Fourth Preferred Embodiment

10 is a plan view of a fourth preferred embodiment of the retainer ring 100 according to the present invention. The design of the slurry passageway 102 of the retainer ring 100 in this embodiment is similar to the third preferred embodiment. These slurry passages 102 have a cross sectional area at the wider inner end and a narrower outer end and are in the form of grooves that are relatively equally spaced apart. In other words, the wider the exit, the narrower the entrance. Each of these slurry passages 102 is formed and produced in a similar manner to the embodiment described above. Again, the width and depth of the slurry passageways 102 are determined by the specific needs for the polishing process. That is, the dimensions of the slurry passages 102 are the factors described in the third preferred embodiment: (1) tanφ ₂ , (2) tanφ ₂ <10 °, and (3) A ₂ / A ₁ Must be determined by In this embodiment, at least one circular passage 104, such as a circular groove, tube, channel, or guiding hole, is formed on the bottom surface of the retainer ring 100 between the outer periphery and the inner periphery of the retainer ring 100. Formed in the cross, and all of the straight grooves 102 intersect with each other. The circular passage 104 functions as a buffer ring. The slurry is attracted through the slurry passageways 102 and partially buffered and rotated in the circular passageway 104 so that the slurry is close to the inner ends of the slurry passageways 102 so that only a portion of the slurry is received. Supplied to the edge portions of the wafer. Thus, the above-described embodiment, i.e., the smoothed and uniformly planarized surface of the wafer can be polished without the formation of thin edge portions. The circular passage 104 has similar dimensions of the slurry passages 102.

Fifth Preferred Embodiment

In semiconductor technology, CMP is the only technology that can achieve global planarization so far in the manufacturing process of VLSI or ULSI. The CMP process can be applied to many manufacturing processes to flatten an uneven surface on a semiconductor substrate for the benefit of the following process or to obtain precise alignment in the etching process following photolithography. Examples of manufacturing semiconductor devices using CMP are drawn and described in the following paragraphs.

In FIG. 11A, the semiconductor substrate 100 has an uneven surface 110. A deposition layer 120 is formed on the semiconductor substrate 100. Since the deposition layer 120 is formed below the non-flat surface 110, the result is a non-flat surface. In the present invention, the CMP apparatus has a retainer ring in which slurry passages are used. The CMP apparatus has a polishing table, a polishing head facing the polishing table, and a slurry feeder for supplying a slurry on top of the polishing table for polishing. The retainer ring is disposed at the bottom edge of the polishing head. Since the surface of the deposition layer 120 faces the polishing table, the semiconductor substrate 100 is received by the retainer ring and disposed inside the polishing head. The deposition layer 12 is planarized. Since general CMP equipment described that a slurry is produced that is not flat, the deposition layer 120 cannot be planarized to an expected flat surface. By feeding the slurry through the slurry passageway of the retainer ring, or through the circular passageway, the slurry is evenly dispersed on the wafer surface. That is, the surface of the deposition layer 120 can obtain a uniformly flattened surface as shown in Figure 11b.

The CMP process may also be applied to an etch back to form a plug or the like. In FIG. 12A, the substrate 200 has an opening 210. The deposition layer 220 is formed on the substrate 200 to fill the opening 210. To form a plug inside the opening, the deposition layer 220 is etched back. Often, the CMP process is performed for an etch back process. By using CMP equipment with retainer rings in accordance with the present invention, a very uniform plug 220A is formed as shown in FIG. 12B.

Another specification and widely used technique for the CMP process is the manufacture of shallow trench isolation (STI). The method of STI formation is shown in FIGS. 13A-13D. In FIG. 13A, a pad oxide layer 302 having a thickness of about 100 GPa to 150 GPa is formed on the substrate 300, preferably a silicon wafer. A mask layer 304, for example, a silicon nitride layer having a thickness of about 1000 GPa to 3000 GPa is formed to cover the pad oxide layer 302. Etching through the mask layer 304, the pad oxide layer 302, and the substrate 300 forms a trench 306 having a depth of about 0.5 μm.

In FIG. 13B, a retainer oxide layer 308 is formed along a sidewall of the etched trench 306 in a thickness range of about 150 GPa to 200 GPa. An isolation layer 310 is formed to cover the mask layer 304 and to fill the trench 306. Preferably, the isolation layer 310 is formed to have a thickness of about 9000 Å to 11000 Å. In general, densification is generally as follows to obtain improved structural quality.

13C uses the mask layer 304 as a stop layer. As shown in FIG. 13B, the isolation layer 310 is polished to the isolation plug 310 by a CMP process. By using common CMP equipment, the slurry cannot be supplied to be evenly distributed on the surface of the isolation layer 310, so that particles contained in the slurry may contain micro-scratches or other defects. ) Causes. The formation of these fine scratches and defects is likely to result in bridging or electrical short in a subsequent process. The yield of the product is reduced.

In the present invention, the CMP equipment has a retainer ring provided with slurry passages. The substrate 300 is housed inside of the retainer ring with slurry passages. During polishing, the isolation layer 310 (see FIG. 13B) is directed to a polishing pad on the polishing table of the CMP equipment to form the isolation plug 310, as shown in FIG. 13C. Since the polishing slurry is evenly and uniformly distributed over the isolation layer 310, the isolation plug 310a is formed in a uniform structure without fine scratches or defects. Using the conventional method, the mask layer 340 is removed. Thus, an STI is formed.

Although the present invention has been described herein using exemplary preferred embodiments, of course, the scope of the present invention is not limited only to the disclosed embodiments, but rather the scope of the present invention includes various modifications and similar configurations. Accordingly, the true scope of the claims of the present invention should be construed to cover all such modifications and similar configurations.

According to the present invention as described above, a sufficient amount of slurry is supplied to the edge portions of the wafer by acutely impacting the slurry on the outer side of the retainer ring with radially inclined linear grooves when the retainer ring rotates. do. Further, if the circular groove is formed to intersect the straight grooves, the flow of slurry sucked in through the straight grooves is partially mitigated, so that the polishing effect at the edge portions of the wafer is different from that at other portions of the wafer. It is not too bad.

1A is a schematic plan view of a CMP apparatus for performing a CMP process on a semiconductor wafer;

1B is a schematic cross-sectional view of the CMP equipment of FIG. 1A;

1C is a cross-sectional view showing a detailed internal structure of the polishing head used on the CMP equipment of FIGS. 1A and 1B;

2A is a schematic plan view of a conventional retainer ring used on the polishing head of FIG. 1C;

FIG. 2B is a schematic rear view of the conventional retainer ring of FIG. 2A; FIG.

3 is a graph showing the flatness of a semiconductor wafer as a result of a CMP process treatment using the conventional retainer rings of FIGS. 2A and 2B;

4a shows a schematic plan view of a first preferred embodiment of a retainer ring according to the invention;

4B is a schematic rear view of the retainer ring of FIG. 4A;

5a shows a schematic plan view of a second preferred embodiment of a retainer ring according to the invention;

5B is a schematic rear view of the retainer ring of FIG. 5A;

6 is a graph showing the flatness of a semiconductor wafer as a result of a CMP process treatment using the retainer rings of FIGS. 4A and 4B;

7 is a graph showing flatness of a semiconductor wafer as a result of a CMP process treatment using the retainer rings of FIGS. 4A and 4B;

8a and 8b show a plan view and a side view showing a third preferred embodiment of the retainer ring according to the invention;

8C is a schematic cross-sectional view of the slurry passage;

9A-9D show mechanisms of slurry flow;

10 is a schematic plan view showing a fourth preferred embodiment of the retainer ring according to the invention;

11A and 11B are cross-sectional views of a process showing to planarize a deposition layer on a wafer;

12A and 12B are cross-sectional views showing an etch back process;

13A-13D are cross-sectional views illustrating a method for manufacturing an STI using the CMP of the present invention.

* Description of the symbols for the main parts of the drawings *

40, 50, 80, 100: retainer ring

42, 52, 54, 82, 102: home

Claims (45)

Retainer ring for use in CMP equipment, Having a plurality of slurry passages extending from the inner side of the retainer ring to the outer side of the retainer ring, each of the slurry passages having an acute impact angle with respect to the slurry outside the retainer ring as the retainer ring rotates. Is radially inclined to form, And the retainer ring further comprises a circular passage formed between the inner side and the outer wall of the retainer ring. The method of claim 1, And the slurry passages are equally spaced. The method of claim 1, A retainer ring having an inner diameter greater than 4 inches. The method of claim 1, And the retainer ring comprises ten slurry passages. The method of claim 1, And the slurry passages are each formed in a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm. The method of claim 1, And the slurry has a straight path through the slurry passages. In CMP equipment, A polishing table; A polishing pad on the polishing table; A slurry feeder for supplying a slurry on the polishing table to polish a wafer; A polishing head for arranging the wafer and: A retainer ring for receiving the wafer at the bottom edge of the polishing head, The wafer is received in the retainer ring with the surface to be polished facing the polishing pad, The retainer ring has a plurality of slurry passages for directly supplying the slurry supplied by the slurry feeder through the retainer onto the surface of the wafer and the slurry passages are polished when the polishing head is spun for polishing. And a circular passage inclined radially so as to form an acute impact angle with respect to the slurry flow outside the head, the circular passage being formed between the inner side and the outer wall of the retainer ring. The method of claim 7, wherein CMP equipment with an inner diameter of the retainer ring larger than 4 inches. The method of claim 7, wherein The slurry passages are each formed with a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm. Retainer ring for use in CMP equipment, A plurality of slurry passages extending from an inner side of the retainer ring to an outer wall of the retainer ring; And at least one circular passageway intersecting the slurry passages between an inner circumference and an outer circumference of the retainer ring. The method of claim 10, And the slurry passages are equally spaced. The method of claim 10, The slurry passages are radially inclined such that an acute angle of impact is formed with respect to the slurry on the outside of the retainer ring as the retainer ring rotates. The method of claim 10, A retainer ring having an inner diameter greater than 4 inches. The method of claim 10, And the retainer ring comprises ten slurry passages. The method of claim 10, And the slurry passages are each formed in a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm. The method of claim 10, And the slurry has a straight path through the slurry passages. The method of claim 10, And the circular passage is formed with a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm. In CMP equipment, A polishing table; A polishing pad on the polishing table; A slurry feeder for supplying a slurry on the polishing table to polish a wafer; A polishing head for arranging the wafer and: A retainer ring for receiving the wafer at the bottom edge of the polishing head, The wafer is received in the retainer ring with the surface to be polished facing the polishing pad, The retainer ring comprises a plurality of slurry passages for supplying the slurry supplied by the slurry feeder directly through the retainer onto the surface of the wafer; And a circular passage crossing the slurry passages between an inner circumference and an outer circumference of the retainer ring. The method of claim 18, Wherein the slurry passages are equally spaced. The method of claim 18, And the slurry passages are radially inclined such that an acute angle of impact is formed with respect to the slurry outside the retainer ring. The method of claim 18, CMP equipment with an inner diameter of the retainer ring larger than 4 inches. The method of claim 18, The slurry passages are each formed with a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm. The method of claim 18, The circular passage is formed in a width of 0.05 to 0.3 mm and a depth of 2 to 4 mm CMP equipment. Retainer ring for use in CMP equipment, A plurality of slurry passages passing through the retainer ring; Having a circular passageway intersecting the slurry passages with each other between an inner side and an outer wall of the retainer ring, Each of the slurry passages has a passage that gradually extends for the slurry from the inlet to the outlet of the slurry passageway. The method of claim 24, The slurry passages are designed with diffusion angles between 0 and 10 degrees, and the impact angle is Wherein the x is the minimum distance between the tangent line at the inlet point and the tangent line at the outlet point and l is the length of the passage of each of the slurry passages. The method of claim 24, Each of the slurry passages has a larger cross-sectional area at the inner end than a cross-sectional area at the outer end. The method of claim 24, Each of said slurry passages has a straight passage for slurry flow. In CMP equipment, A polishing table; A polishing pad on the polishing table; A slurry feeder for supplying a slurry on the polishing table to polish a wafer; A polishing head for arranging the wafer and: A retainer ring for receiving the wafer at the bottom edge of the polishing head, The wafer is received in the retainer ring with the surface to be polished facing the polishing pad, The retainer ring, Having a plurality of slurry passages for feeding the slurry supplied by the slurry feeder directly over the surface of the wafer through the retainer ring and the slurry passages gradually expand for the slurry from the inlet to the outlet of the slurry passage And the slurry passages have circular passages intersecting the slurry passages with each other between the inner side and the outer wall of the retainer ring. The method of claim 28, The slurry passages are designed with diffusion angles between 0 and 10 degrees, and the impact angle is Calculated by the equation, wherein x is the minimum distance between the tangent line of the inlet point and the tangent line of the outlet point and l is the passage length of each of the slurry passages. The method of claim 28, Each of the slurry passages has a larger cross-sectional area at the inner end than a cross-sectional area at the outer end. In the CMP process for planarizing the surface of the wafer, Arranging the wafer inside the polishing head such that the surface of the wafer faces the polishing table; Receiving the wafer inside the polishing head by a retainer ring having a plurality of slurry passages; Feeding a slurry from a slurry feeder, wherein the slurry is evenly distributed over a deposition layer through the slurry passages of the retainer ring; Rotating the polishing table and spinning the polishing head, The slurry passages are designed to have passages that gradually extend for the slurry from the inlet to the outlet of the slurry passage, The retainer ring further comprises a circular passage between the inner and outer periphery of the bottom of the retainer ring. The method of claim 31, wherein The slurry passages are designed such that an acute angle of impact is formed with respect to the slurry flow outside the polishing head while the polishing head is spinning for polishing. The method of claim 31, wherein Each of the slurry passages has a diffusion angle between 0 degrees and 10 degrees, and the impact angle is Calculated by the equation, wherein x is the minimum distance between the tangent line of the inlet point and the tangent line of the outlet point and l is the passage length of each of the slurry passages. The method of claim 31, wherein The retainer ring is provided with a plurality of the circular passages CMP process. In the CMP process for polishing a wafer having an electronic structure formed on the surface, Supplying a wafer; Forming a deposition layer on the wafer; Polishing the deposition layer using CMP equipment having a retainer ring, the retainer ring having a plurality of slurry passages extending from the inner surface to the outer surface of the retainer to distribute the slurry evenly over the deposition layer. , The slurry passages are designed to have passages that gradually extend for the slurry from the inlet to the outlet of the slurry passageway; The retainer ring further comprises at least one circular passage between the inner and outer periphery of the bottom of the retainer ring. 36. The method of claim 35 wherein The slurry passages are designed such that an acute impact angle is formed with respect to the slurry flow outside the polishing head while the polishing head is spinning for polishing. 36. The method of claim 35 wherein Each of the slurry passages has a diffusion angle between 0 degrees and 10 degrees, and the impact angle is Calculated by the equation, wherein x is the minimum distance between the tangent line of the inlet point and the tangent line of the outlet point and l is the passage length of each of the slurry passages. The method of claim 35, wherein The retainer ring is provided with a plurality of the circular passages CMP process. A method for manufacturing an STI on a substrate, Forming a mask layer on the substrate, the mask layer having an opening that exposes a portion of the substrate; Removing the exposed portion of the substrate to form a trench using the mask layer as a mask; Forming an isolation layer over the substrate to fill the trench; Using a CMP with a retainer ring having a plurality of slurry passageways to planarize the isolation layer having the mask layer as a stop layer, The slurry passages are designed such that the passage gradually expands for the slurry from the inlet to the outlet of the slurry passage, And the retainer ring comprises at least one circular passageway between an inner circumference and an outer circumference of the bottom of the retainer ring. A method for manufacturing an STI on a substrate, Forming a mask layer on the substrate; Etching through the mask layer and the substrate to form a trench; Forming an isolation layer on the mask layer to fill the trench with an isolation layer; The substrate is accommodated inside the retainer ring of the CMP equipment so that the isolation layer is directed to the polishing pad of the CMP equipment, wherein the retainer ring is supplied to the isolation layer with the slurry supplied from the slurry feeder of the CMP equipment flat and uniform. Have a plurality of slurry passageways so that the slurry passages are designed to gradually expand the passageway for the slurry from the inlet to the outlet of the slurry passageway, Polishing the isolation layer to form an isolation plug; Removing the mask layer to form an STI, And the retainer ring comprises at least one circular passageway between an inner circumference and an outer circumference of the bottom of the retainer ring. The method of claim 40, And the substrate comprises a silicon wafer. The method of claim 40, Forming a pad oxide layer on the substrate prior to forming the mask layer. The method of claim 40, Forming a liner oxide layer along sidewalls of the trench prior to forming the isolation layer. The method of claim 40, And the slurry passages are radially inclined to form an acute angle of impact with respect to the slurry flow outside the retainer ring. The method of claim 40, Each of the slurry passages has a diffusion angle between 0 degrees and 10 degrees, and the impact angle is And x is the minimum distance between the tangent line of the inlet point and the tangent line of the outlet point and l is the passage length of each of the slurry passages.