CN115431166A - Wafer grinding method - Google Patents
Wafer grinding method Download PDFInfo
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- CN115431166A CN115431166A CN202211128106.0A CN202211128106A CN115431166A CN 115431166 A CN115431166 A CN 115431166A CN 202211128106 A CN202211128106 A CN 202211128106A CN 115431166 A CN115431166 A CN 115431166A
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- cleaning
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- 238000000227 grinding Methods 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000005498 polishing Methods 0.000 claims abstract description 132
- 238000004140 cleaning Methods 0.000 claims abstract description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000005507 spraying Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 29
- 239000007921 spray Substances 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention provides a wafer grinding method, which comprises the following steps: transferring the wafer to a polishing pad; performing first grinding on the grinding pad; cleaning the grinding pad for the first time, spraying water to clean the grinding pad, and simultaneously maintaining the pressure on the surface of the grinding pad by an adjuster to perform adjustment action and cleaning action; and performing second grinding on the grinding pad. The wafer grinding method provided by the invention can effectively reduce the defects on the surface of the ground wafer.
Description
Technical Field
The invention relates to the technical field of wafer manufacturing, in particular to a wafer grinding method.
Background
With the development of large-scale integrated circuits, semiconductor devices are fabricated on the surface of a wafer in a high-density cluster, and the wafer needs to be finely ground. CMP (Chemical Mechanical Planarization) is a process that uses Chemical etching and Mechanical forces to planarize a silicon wafer or other substrate material during processing. Referring to fig. 1 to 3, in a conventional CMP process, a polishing pad 1 (pad) on a polishing platen is configured to rotate together with the polishing platen, a wafer 6 is sucked by a polishing head 2 (polish head), then contacts the polishing pad 1, is pressurized, reciprocates and rotates in a predetermined region (for example, along a radial direction of the polishing pad), and is mechanically polished by friction. Meanwhile, a polishing liquid is supplied onto the polishing pad by a polishing liquid supply unit 3 (slurry delivery), and a polishing pad adjuster 4 (pad adjuster) reciprocates on the polishing pad 1 by a conditioning disk (diamond disk) connected to a rotary arm (arm) so that the polishing liquid applied to the polishing pad flows into the wafer while being uniformly spread on the polishing pad. The polishing pad dresser applies a constant pressure to the polishing pad during the reciprocating motion to mechanically dress (dressing) the polishing pad so that the polishing pad maintains a constant polishing surface and the roughness of the polishing pad surface is maintained. In this process, most of the particles generated by polishing are discharged from the surface of the polishing pad with the slurry. However, a small portion remains that is not carried away by the slurry, forming residues 5 in the polishing pad grooves 11. These residues 5 can affect the wafer, adhere to the surface of the wafer 6 or cause a recess on the surface of the wafer 6, thereby forming a defect 61 on the surface of the wafer 6, so that the flatness of the surface of the wafer is not ideal, which affects the polishing effect.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a wafer polishing method, which can effectively reduce the defects on the wafer surface.
The invention provides a wafer grinding method, which comprises the following steps: transferring the wafer to a polishing pad; performing first grinding on the grinding pad; cleaning the grinding pad for the first time, spraying water to clean the grinding pad, and simultaneously maintaining the pressure on the surface of the grinding pad by an adjuster to perform adjustment action and cleaning action; and performing second grinding on the grinding pad.
Optionally, in the step of cleaning the polishing pad for the first time, the pressure applied to the polishing pad by the adjuster is greater than the pressure applied to the polishing pad by the adjuster during the first polishing.
Optionally, in the step of cleaning the polishing pad for the first time, the operation time is 5s-8s; the pressure applied by the conditioner to the polishing pad is in the range of 5.5psi to 6psi.
Optionally, the first grinding comprises: the adjuster presses down to the surface of the grinding pad to apply pressure to the grinding pad; the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
Optionally, in the step of primary grinding, the working time is 15s-20s; the pressure applied by the regulator to the grinding pad is 5psi-5.5psi; the polishing liquid supply unit supplies the polishing liquid at a flow rate of 190ml/min to 210ml/min.
Optionally, the second grinding comprises: the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
Optionally, in the step of secondary grinding, the operation time is 25s-30s; the pressure applied to the grinding pad by the regulator is the same as the pressure applied to the grinding pad by the regulator in the step of cleaning the grinding pad for the first time; the polishing liquid supply unit supplies the polishing liquid at a flow rate of 190ml/min to 210ml/min.
Optionally, when the step of cleaning the polishing pad for the first time is performed, the step of water-milling for the first time is performed at the same time; the first water grinding step comprises the following steps: and performing first water grinding by means of water spray for cleaning the grinding pad for the first time at the same time of the step for cleaning the grinding pad for the first time.
Optionally, after the second grinding step, performing a second step of cleaning the grinding pad, and performing a second step of water grinding; the step of cleaning the polishing pad for the second time comprises: spraying water to the grinding pad, and simultaneously maintaining the pressure on the surface of the grinding pad by the regulator to carry out regulation action and cleaning action; the second water grinding step comprises the following steps: and rotating the grinding pad, and performing secondary water grinding by means of water spray for cleaning the grinding pad for the second time.
Optionally, in the step of cleaning the polishing pad for the first time, the operation time is 5s-8s; the pressure applied by the regulator to the grinding pad is 5.5psi-6psi; in the first water grinding step, the lower pressure of the grinding head is 1.5psi-2psi; the operation time is 5s-8s; in the step of cleaning the grinding pad for the second time, the working time is 8-10 s; the pressure applied by the regulator to the grinding pad is 5.5psi-6psi; in the step of the second water grinding, the down pressure of the grinding head is 1.5psi-2psi; the working time is 4s-6s.
The invention has the beneficial effects that,
1. according to the grinding method, through step-by-step grinding, the grinding pad is cleaned for the first time by water spraying after the first grinding, residues in the groove can be cleaned in time in the grinding process, and the defects on the surface of the ground wafer are effectively reduced; and through the combined use of the regulator, the residues can be further better cleaned, and the roughness of the surface of the grinding pad can be maintained while cleaning, so that the roughness which is basically the same as that in the first grinding process can be maintained in the second grinding process, and the prior regulation time of the roughness of the surface of the grinding pad in the second grinding process does not need to be increased because of adding a cleaning step.
2. According to the grinding method, the water grinding is maintained in the step of cleaning the grinding pad for the first time, so that on one hand, the wafer does not need to be lifted in the process of cleaning the grinding pad for the first time, and the defect that the surface of the wafer is corroded due to air contact in the grinding process is avoided; on the other hand, the polished surface of the wafer can be cleaned by the way, so that the possibility that residues are attached to the surface of the wafer is reduced; in addition, the grinding state is kept in the process of cleaning the grinding pad for the first time, and the grinding state is maintained, so that the time of the first grinding is prolonged, the time of the second grinding can be reduced, and partial grinding time is overlapped with the time of cleaning the grinding pad in the total grinding time, so that the time of the whole process is saved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a chemical mechanical polishing apparatus used in a wafer polishing method;
FIG. 2 is a schematic view of a polishing pad surface of a CMP apparatus used in a wafer polishing method;
FIG. 3 is a schematic diagram of a wafer after polishing in a wafer polishing method;
FIG. 4 is a schematic flow chart illustrating a wafer polishing method according to the present invention;
FIG. 5 is a schematic flow chart diagram illustrating a wafer polishing method according to one embodiment of the present invention;
FIG. 6 is a schematic flow chart diagram illustrating a wafer polishing method according to one embodiment of the present invention; .
Description of reference numerals:
1. a polishing pad; 11. grinding a pad groove; 2. a grinding head; 3. a polishing liquid supply unit; 4. an adjuster; 5. a residue; 6. a wafer; 61. and (5) a defect.
Detailed Description
In order to effectively reduce the defects on the surface of the wafer, the invention provides a wafer grinding method, which comprises the following steps: transferring the wafer to a polishing pad; performing first grinding on the grinding pad; cleaning the grinding pad for the first time, spraying water to clean the grinding pad, and maintaining the pressure on the surface of the grinding pad by the regulator to perform regulation action and cleaning action; and performing second grinding on the grinding pad.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 4, the present embodiment provides a wafer polishing method, including the following steps:
transferring the wafer to a polishing pad;
performing first grinding on the grinding pad;
cleaning the grinding pad for the first time, spraying water to clean the grinding pad, and maintaining the pressure on the surface of the grinding pad by the regulator to perform regulation action and cleaning action;
a second polishing is performed on the polishing pad.
Wherein, the first cleaning of the polishing pad is performed after the first polishing, and the polishing head adsorbing the wafer is lifted up during the cleaning of the polishing pad. After the first cleaning of the polishing pad, the polishing head is pressed down again, and the pressure is maintained to be the same.
Further, in the step of cleaning the polishing pad for the first time, the pressure applied by the regulator to the polishing pad is greater than the pressure applied by the regulator to the polishing pad during the first polishing.
Specifically, in the step of cleaning the grinding pad for the first time, the operation time is 5s-8s; the pressure applied by the regulator to the grinding pad is 5.5psi-6psi; .
Further, the first grinding includes: the adjuster presses down to the surface of the grinding pad to apply pressure to the grinding pad; the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
Specifically, in the first grinding step, the working time is 15-20 s; the pressure applied by the regulator to the grinding pad is 5psi-5.5psi; the polishing liquid supply unit supplies the polishing liquid at a flow rate of 190ml/min to 210ml/min.
Further, the second grinding includes: the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
Specifically, in the second grinding step, the working time is 25s-30s. The pressure applied to the grinding pad by the regulator is the same as the pressure applied to the grinding pad by the regulator in the step of cleaning the grinding pad for the first time; the polishing liquid supply unit supplies the polishing liquid at a flow rate of 190ml/min to 210ml/min.
Further, it comprises: before the first grinding, pre-spreading grinding liquid on the grinding pad, wherein the working time is 3s-5s. And after the second grinding step, performing a second grinding pad cleaning step for 8-10 s. After the second pad cleaning step, the wafer is transferred to the next process flow.
According to the polishing method, the polishing pad is cleaned for the first time by water spraying after the first time of polishing through step-by-step polishing, residues in the grooves can be cleaned in time in the polishing process, and therefore defects on the surface of the polished wafer are effectively reduced. And through the combined use of the regulator, the residues can be further better cleaned, and the roughness of the surface of the grinding pad can be maintained while cleaning, so that the roughness which is basically the same as that in the first grinding process can be maintained in the second grinding process, and the prior regulation time of the roughness of the surface of the grinding pad in the second grinding process does not need to be increased because of adding a cleaning step.
Example 2
The present embodiment provides a wafer polishing method, referring to fig. 5, which is different from the above embodiment 1 in that: when the step of cleaning the grinding pad for the first time is carried out, simultaneously carrying out the step of water grinding for the first time; the first water grinding step comprises the following steps: and performing first water grinding by means of water spray for cleaning the grinding pad for the first time at the same time of the step for cleaning the grinding pad for the first time.
Further, after the second grinding step, performing a second grinding pad cleaning step and performing a second water grinding step; the step of cleaning the polishing pad for the second time comprises: spraying water to the polishing pad, and simultaneously, maintaining the pressure on the surface of the polishing pad by the regulator to carry out regulation action and cleaning action; the second water grinding step comprises the following steps: and rotating the grinding pad, and performing secondary water grinding by means of water spray for cleaning the grinding pad for the second time.
Specifically, in the step of cleaning the grinding pad for the first time, the operation time is 5s-8s; the pressure applied by the regulator to the grinding pad is 5.5psi-6psi; in the first water grinding step, the lower pressure of the grinding head is 1.5psi-2psi; the working time is 5s-8s; in the step of cleaning the grinding pad for the second time, the working time is 8-10 s; the pressure applied by the regulator to the grinding pad is 5.5psi-6psi; in the step of secondary water grinding, the lower pressure of the grinding head is 1.5psi-2psi; the working time is 4s-6s.
The remaining steps and conditions are the same as in example 1 above and are not described herein.
In the polishing method of the embodiment, the water polishing is maintained in the step of cleaning the polishing pad for the first time, so that on one hand, the wafer does not need to be lifted in the process of cleaning the polishing pad for the first time, and the corrosion defect caused by the contact of air on the surface of the wafer in the polishing process is avoided; on the other hand, the polished wafer surface can be cleaned by the way, so that the possibility that residues are attached to the wafer surface is reduced; in addition, the grinding state is kept in the process of cleaning the grinding pad for the first time, and the grinding state is maintained, so that the time of the first grinding is prolonged, the time of the second grinding can be reduced, and partial grinding time is overlapped with the time of cleaning the grinding pad in the total grinding time, so that the time of the whole process is saved. In addition, a second water grinding step can be added in the process of cleaning the grinding pad for the second time, so that the grinding effect is further improved.
Technical solution of the present invention has been described above through examples, and it is believed that those skilled in the art can understand the present invention through the above examples. It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications derived therefrom are intended to be within the scope of the invention.
Claims (10)
1. A wafer polishing method is characterized by comprising the following steps:
transferring the wafer to a polishing pad;
performing first grinding on the grinding pad;
cleaning the grinding pad for the first time, spraying water to clean the grinding pad, and simultaneously maintaining the pressure on the surface of the grinding pad by an adjuster to perform adjustment action and cleaning action;
and performing second grinding on the grinding pad.
2. The wafer polishing method as set forth in claim 1,
in the step of cleaning the polishing pad for the first time, the pressure applied to the polishing pad by the adjuster is greater than the pressure applied to the polishing pad by the adjuster in the first polishing.
3. The wafer polishing method as set forth in claim 2,
in the step of cleaning the grinding pad for the first time, the operation time is 5-8 s; the pressure applied by the adjuster to the polishing pad is 5.5psi-6psi.
4. The wafer polishing method as set forth in claim 1,
the first grinding includes:
the regulator is pressed down to the surface of the grinding pad to apply pressure to the grinding pad;
the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
5. The wafer polishing method as set forth in claim 4,
in the first grinding step, the working time is 15-20 s; the pressure applied by the regulator to the grinding pad is 5psi-5.5psi; the flow rate of the polishing liquid supplied by the polishing liquid supply unit is 190ml/min to 210ml/min.
6. The wafer polishing method as set forth in claim 1,
the second grinding comprises:
the polishing liquid supply unit supplies polishing liquid to the surface of the polishing pad, and the polishing pad rotates to polish and the regulator maintains pressure to regulate.
7. The wafer polishing method as set forth in claim 6,
in the second grinding step, the working time is 25-30 s; the pressure applied to the polishing pad by the regulator is the same as the pressure applied to the polishing pad by the regulator in the step of cleaning the polishing pad for the first time; the flow rate of the polishing liquid supplied by the polishing liquid supply unit is 190ml/min to 210ml/min.
8. The wafer polishing method as set forth in claim 6,
when the step of cleaning the grinding pad for the first time is carried out, simultaneously carrying out the step of water grinding for the first time;
the first water milling step comprises the following steps: and performing primary water grinding by means of water spray for cleaning the grinding pad for the first time at the same time of the step of cleaning the grinding pad for the first time.
9. The wafer polishing method as set forth in claim 8,
after the second grinding step, carrying out a second grinding pad cleaning step and simultaneously carrying out a second water grinding step;
the step of cleaning the polishing pad for the second time comprises the following steps: spraying water to the polishing pad, and simultaneously, maintaining the pressure on the surface of the polishing pad by the regulator to carry out regulation action and cleaning action;
the second water grinding step comprises the following steps: and rotating the grinding pad, and carrying out secondary water grinding by means of water spray for cleaning the grinding pad for the second time.
10. The wafer polishing method as set forth in claim 9,
in the step of cleaning the grinding pad for the first time, the operation time is 5-8 s; the pressure applied by the regulator to the grinding pad is 5.5-6 psi; in the first water grinding step, the lower pressure of the grinding head is 1.5psi-2psi; the working time is 5s-8s;
in the step of cleaning the grinding pad for the second time, the working time is 8-10 s; the pressure applied by the regulator to the grinding pad is 5.5-6 psi; in the step of the second water grinding, the lower pressure of the grinding head is 1.5psi-2psi; the working time is 4s-6s.
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| CN202211128106.0A CN115431166A (en) | 2022-09-16 | 2022-09-16 | Wafer grinding method |
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| CN202211128106.0A CN115431166A (en) | 2022-09-16 | 2022-09-16 | Wafer grinding method |
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| CN114248195A (en) * | 2021-12-30 | 2022-03-29 | 北京烁科精微电子装备有限公司 | Grinding method |
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