CN108214108A - A kind of chemical and mechanical grinding method - Google Patents
A kind of chemical and mechanical grinding method Download PDFInfo
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- CN108214108A CN108214108A CN201611135969.5A CN201611135969A CN108214108A CN 108214108 A CN108214108 A CN 108214108A CN 201611135969 A CN201611135969 A CN 201611135969A CN 108214108 A CN108214108 A CN 108214108A
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- Prior art keywords
- grinding
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- ground
- lapping liquid
- liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
Abstract
The present invention provides a kind of chemical and mechanical grinding method, the described method comprises the following steps：Wafer to be ground is provided, the wafer includes the interlayer insulating film with opening and covers the interlayer insulating film and fill the metal tungsten layer of the opening；The first grinding is carried out to the wafer using the first lapping liquid, to remove the major part metal tungsten layer on the interlayer insulating film；The second grinding is carried out to the wafer using the second lapping liquid, to remove the remaining metal tungsten layer on the interlayer insulating film, forms tungsten plug；Remove the remaining lapping liquid of the second grinding institute on the wafer.Grinding method according to the present invention, after normal grinding, the step of increasing the second grinding institute remaining lapping liquid removed on the wafer, under conditions of production cost is hardly increased, wafer tungsten plug degree of impairment present in existing WCMP process of lapping is prevented, product yield is improved with this.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of chemical and mechanical grinding method.
Background technology
With the rapid development of super large-scale integration (ULSI, Ultra Large Scale Integration), collection
It becomes increasingly complex and finely into what circuit manufacturing process became.In order to improve integrated level, manufacture cost, the characteristic size of element are reduced
(Feature Size) constantly becomes smaller, and the number of elements in chip unit area is continuously increased, and plane routing has been difficult to meet member
The requirement of part high density distribution can only use multiple layer metal interconnection technique, using the vertical space of chip, to further improve device
The integration density of part reduces dead resistance and signal delay caused by parasitic capacitance.Wherein tungsten (W) is due to good conduction
Property, Step Coverage, gap filling and the characteristics such as deelectric transferred, are often used to do contact plunger or attachment plug, electrically be connected
It connects.
The processing step for forming tungsten plug (W-Plug) is generally as follows：First, it is exhausted in interlayer by lithography and etching technique
Expose electrode or the plain conductor of lower floor in the bottom of formation contact hole or groove in edge layer, the contact hole and groove；Then, in institute
State bottom and side wall, the layer insulation layer surface deposit diffusion barriers of contact hole and groove；Then, in the diffusion impervious layer
Upper deposited metal tungsten layer, the metal tungsten layer of deposition at least fill up the contact hole or groove；Followed by passing through chemical mechanical grinding
(CMP, Chemical Mechanical Polishing) removal is deposited on the metal tungsten layer of layer insulation layer surface and diffusion hinders
Barrier only retains metal tungsten layer and diffusion impervious layer in the contact hole or groove, forms contact plunger or attachment plug.It reaches
It could continue to connect up above to leveling, otherwise can lead to wire fracture, cause serious consequence.
A kind of method of polishing metal tungsten of the prior art is：It is ground on the first grinding table using tungsten lapping liquid
Mill, is cleaned with deionized water；It is ground using tungsten lapping liquid on the second grinding table, is cleaned with deionized water；It is ground in third
It is ground, is cleaned with deionized water, as shown in Figure 1 using oxide lapping liquid on mill platform.In WCMP (chemical mechanical grinding of tungsten)
Prior art in, it is a kind of common the defects of be that tungsten plug damages seriously in chemical mechanical grinding, in subsequent technique, diffusion
The stronger copper metal of ability can be squeezed out via plug hole bottom and be diffused in plug hole, and tungsten plug resistance value is caused to increase.It is right
When the interconnection structure progress wafer of wafer permits Acceptance Tests (WAT, Wafer Acceptable Test), it is frequently found, tungsten plug
Resistance value is higher, has been more than the permitted upper limit of specification, so as to affect the electric conductivity of interconnection structure, has caused wafer loss, lead
Finished product rate and reliability is caused to reduce.
Therefore, it is necessary to a kind of new chemical and mechanical grinding method is proposed, to solve above-mentioned technical problem.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of chemical and mechanical grinding method, includes the following steps：Offer is treated
Grinding crystal wafer, the wafer include opening described in interlayer insulating film and the covering interlayer insulating film and filling with opening
The metal tungsten layer of mouth；The first grinding is carried out to the wafer, to remove the major part tungsten on the interlayer insulating film
Layer；The second grinding is carried out to the wafer, to remove the remaining metal tungsten layer on the interlayer insulating film, tungsten is formed and inserts
Plug；Remove the remaining lapping liquid of the second grinding institute on the wafer.
Further, first grinding and the described second grinding carry out on the first grinding table and the second grinding table respectively.
Further, second grinding removed on the wafer the method for remaining lapping liquid be included in water mill
It stops in liquid or the wafer is ground using water mill liquid.
Further, the grinding of the water mill liquid and second grinding carry out on same grinding table.
Further, it is described that the milling time that the wafer is ground is more than 3 seconds using water mill liquid.
Further, it is right after the method further includes the remaining lapping liquid of the second grinding institute removed on the wafer
The wafer carries out third grinding.
Further, lapping liquid includes oxide lapping liquid used by the third grinding.
Further, the milling time of the water mill liquid is 4-7 seconds.
Further, the parameter of grinding table when carrying out second grinding is set as：The rotating speed of grinding table is 100-
110rpm/min, the rotating speed of grinding head is 30-35rpm/min, and the pressure of grinding head is 6-6.5psi, and the rotating speed of abrasive disk is
20-25rpm/min, the pressure of abrasive disk is 5-5.5psi, and the flow of second lapping liquid is 200-220mL/min.
Further, the parameter of grinding table when being ground using the water mill liquid is set as：The rotating speed of grinding table is 85-
90rpm/min, the rotating speed of grinding head is 25-30rpm/min, and the pressure of grinding head is 5-5.5psi, and the rotating speed of abrasive disk is 15-
20rpm/min, the pressure of abrasive disk is 4.5-5psi, and the flow of water mill liquid is 180-200mL/min.
Further, after the step of carrying out the second grinding to the wafer, described second on the wafer is removed grinds
Before the step of mill institute remaining lapping liquid, the step of being cleaned with deionized water is further included.
In conclusion according to the method for the present invention, after normal grinding, increase described second removed on the wafer and grind
The step of mill institute remaining lapping liquid, under conditions of production cost is hardly increased, it is therefore prevented that wafer is ground in existing WCMP
Existing tungsten plug degree of impairment in the process, product yield is improved with this.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 is the flow chart being ground according to a kind of grinding method in common process；
Fig. 2 is the flow chart being ground according to the chemical and mechanical grinding method of the present invention；
Fig. 3 is the flow chart being ground according to the scheme of the embodiment of the present invention one；
Fig. 4 is the flow chart being ground according to the scheme of the embodiment of the present invention two；
Fig. 5 is the flow chart being ground according to the scheme of the embodiment of the present invention three；
Fig. 6 is the flow chart being ground according to the scheme of the embodiment of the present invention four；
Fig. 7 is the flow chart being ground according to the scheme of the embodiment of the present invention five；
During Fig. 8 is produces in batches, chemical and mechanical grinding method according to the present invention, the wafer yield with prior art production
Comparison diagram.
Specific embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
A kind of chemical and mechanical grinding method.Obviously, execution of the invention is not limited to the technical staff of semiconductor applications and is familiar with
Specific details.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can be with
With other embodiment.
It should be understood that it when the term " comprising " and/or " including " is used in this specification, indicates described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or combination thereof.
Table 1 determines the comparison of tungsten plug damage stage of development result of the test
In order to determine which stage tungsten plug damage of the prior art is happened at, following experiment is carried out, such as 1 institute of table
Show, A group difference with the prior art is：After normally completing grinding on the first grinding table, wafer is soaked in and is covered with tungsten
Find tungsten plug without apparent damage 5 minutes on the grinding table of lapping liquid, after grinding；B group difference with the prior art is：Second
After normally completing grinding on grinding table, wafer is soaked on the grinding table for being covered with tungsten lapping liquid 5 minutes, is found after grinding
Tungsten plug damage is serious；C group difference with the prior art is：After normally completing grinding on third grinding table, wafer is impregnated
In being covered on the grinding table of tungsten lapping liquid 5 minutes, find tungsten plug without apparent damage after grinding.Comparative test result can be with
It was found that the tungsten plug degree of impairment of B groups is serious, and the tungsten plug of A groups and C groups is without apparent damage.The tungsten plug damage of B groups is tight
Weight, be because：After the grinding on the second grinding table, it is covered in the tungsten film above tungsten plug and interlayer dielectric and is thoroughly gone
It removes, tungsten plug has been completely exposed.The above test results show that in the WCMP of the prior art, the stage of tungsten plug damage, which occurs, is
After grinding on the second grinding table is completed.
A kind of flow chart of chemical and mechanical grinding method proposed by the present invention is as shown in Fig. 2, it includes following key step：
In step s 201, wafer to be ground is provided, the wafer includes interlayer insulating film and covering with opening
The interlayer insulating film and the metal tungsten layer for filling the opening；
In step S202, the first grinding is carried out to the wafer, to remove the major part institute on the interlayer insulating film
State metal tungsten layer；
In step S203, the second grinding is carried out to the wafer, it is remaining described on the interlayer insulating film to remove
Metal tungsten layer forms tungsten plug；
In step S204, the remaining lapping liquid of the second grinding institute on the wafer is removed.
Wherein, first grinding and the grinding carry out on the first grinding table and the second grinding table respectively.It is described clear
Except on the wafer it is described second grinding institute remaining lapping liquid method be included in water mill liquid stop or use water mill liquid
The wafer is ground.The grinding of the water mill liquid and second grinding carry out on same grinding table.Use water mill
Liquid is more than the milling time of the grinding wafer 3 seconds.Interlayer insulating film and exhausted positioned at the interlayer is formed on the wafer
Contact hole or groove in edge layer are filled with the top table of diffusion impervious layer and tungsten layer, wherein tungsten layer in the contact hole or groove
Face is higher than the surface of the interlayer insulating film.It grinds, grinds based on the above-mentioned grinding carried out using the first lapping liquid to the wafer
Fall the most tungsten of crystal column surface；Grinding (over polish) was ground to what the wafer carried out using the second lapping liquid,
The situation that wafer tungsten plug present in existing WCMP process of lapping is prevented to damage.
Chemical and mechanical grinding method according to the present invention after normal grinding, increases described the removed on the wafer
The step of two grinding institute remaining lapping liquids, under conditions of production cost is hardly increased, it is therefore prevented that wafer is in existing WCMP
Tungsten plug degree of impairment present in process of lapping improves product yield with this.
Embodiment one
In the WCMP of the prior art, the stage that tungsten plug damage occurs is after the second grinding table.Therefore it is existing in order to solve
There is tungsten plug damage problem existing for technology, need to be improved the technique on the second grinding table.
Fig. 3 is the schematic diagram being ground according to the scheme of the embodiment of the present invention one, including following key step：
In step S301, ground 80 seconds using tungsten lapping liquid on the first grinding table, 10 are cleaned with deionized water
Second；
In step s 302, it is ground 80 seconds using tungsten lapping liquid on the second grinding table, 10 is cleaned with deionized water
Second, it is stopped 1 second in water mill liquid；
In step S303, ground 100 seconds using oxide lapping liquid on third grinding table, 10 are cleaned with deionized water
Second.
Wherein, the effect of the grinding on the first grinding table is to grind off the most tungsten of crystal column surface；In the second grinding table
On grinding effect be prevent wafer present in existing WCMP process of lapping tungsten plug damage situation；It is ground in third
The effect of grinding on mill platform is to continue with grinding following oxide layer；The purpose cleaned after after each grinding steps with deionized water
It is cleaning grinding pad and crystal column surface, to reduce Related product defect.
In the present embodiment, it is grinder for carrying out the milling apparatus of chemical mechanical grinding to wafer, it mainly includes：
The wafer is simultaneously pressed on the grinding pad by grinding table, the grinding pad for being fixed on the grinding table surface, the fixed wafer
On grinding head, grinding pad is modified, make grinding pad remained during grinding roughness abrasive disk, supply
The lapping liquid supply pipe pipe of lapping liquid and to grinding pad surface sprinkling cleaning solution cleaning device.
In the present embodiment, the parameter of second grinding table is set as：The rotating speed of the grinding table is 100-110rpm/
Min, the rotating speed of the grinding head is 30-35rpm/min, and the pressure of the grinding head is 6-6.5psi, and the abrasive disk turns
Speed is 20-25rpm/min, and the pressure of the abrasive disk is 5-5.5psi, and wherein rpm is speed of rotation unit, and meaning is every
The revolution of minute；Psi is pressure unit, and meaning is pound per square inch.The flow of the tungsten lapping liquid is 200-
220mL/min；The deionized water is as cleaning solution, flow 200-220mL/min.The water mill liquid is deionized water.
Above-mentioned process conditions are that for illustrative purposes, those skilled in the art can be adjusted as the case may be.Make
In the step of being ground with oxide lapping liquid, the flow of the oxide lapping liquid is 140-150mL/min.
The tungsten lapping liquid includes：Acid solution, abrasive grains and Fe-series catalyst.The tungsten lapping liquid
PH is 2-4, and wherein weight percent of the content of solid particle in the tungsten lapping liquid is less than 4%.Fe-series catalyst
For ferric nitrate and the ferrosilicon in nano-colloid state (FeSi).
The oxide lapping liquid includes alkaline solution, abrasive grains, pH buffer and oxidant.The oxide grinding
Liquid pH is 10-12, and wherein weight percent of the content of solid particle in the oxide chemistry lapping liquid is more than 12%.Institute
It states oxidant and includes hydrogen peroxide or halate, the halate is bromate, one or more, the Huo Zhewei in bromite
It is one or more in chlorate, chlorite, preferably hydrogen peroxide (hydrogen peroxide, H2O2)。
Find that the severity of tungsten plug damage is lighter than the grinding method of the prior art after grinding in this way, with showing
There is technology to compare, this grinding method improves to some extent.
Embodiment two
The differing only in stop 1 second in water mill liquid in S302 of the embodiment of the present invention two and embodiment one replaces with
It is ground 3 seconds using water mill liquid, rest part is with reference to embodiment one, and details are not described herein.Fig. 4 is according to the embodiment of the present invention two
The schematic diagram that scheme is ground, including following key step：
In step S401, ground 80 seconds using tungsten lapping liquid on the first grinding table, 10 are cleaned with deionized water
Second；
In step S402, ground 80 seconds using tungsten lapping liquid on the second grinding table, 10 are cleaned with deionized water
Second, it is ground 3 seconds using water mill liquid；
In step S403, ground 100 seconds using oxide lapping liquid on third grinding table, 10 are cleaned with deionized water
Second.
In described the step of being ground using water mill liquid, the water mill liquid is deionized water, and should use tungsten
After lapping liquid grinds and cleaned with deionized water, the step of being ground using water mill liquid is being performed on same grinding table immediately, in this way
On the one hand the purpose done is to make full use of the time, avoid waste wafer shipment speed, is on the other hand to prevent related grinding by-product
Object causes product wafer defect.
In described the step of being ground using water mill liquid, the parameter of second grinding table is set as：The grinding table turns
For speed for 85-90rpm/min, the rotating speed of the grinding head is 25-30rpm/min, and the pressure of the grinding head is 5-5.5psi, institute
The rotating speed for stating abrasive disk is 15-20rpm/min, and the pressure of the abrasive disk is 4.5-5psi, and the flow of the deionized water is
180-200mL/min, wherein rpm are speed of rotation unit, and meaning is revolution per minute；Psi is pressure unit, meaning
For pound per square inch.Above-mentioned process conditions are that for illustrative purposes, those skilled in the art can be according to specific feelings
Condition is adjusted.Specific technical process is with reference to the prior art, and details are not described herein.
Compared with common process of the prior art, using the method for the embodiment of the present invention two, there is slight damage in tungsten plug
Wound, compared with embodiment one, there is further improvement.
Embodiment three
The embodiment of the present invention three and embodiment two differ only in will be in S402 ground 3 seconds and be extended for using water mill liquid
4 seconds, rest part was with reference to embodiment two, and details are not described herein.Fig. 5 is to be ground according to the scheme of the embodiment of the present invention three
Schematic diagram, including following key step：
In step S501, ground 80 seconds using tungsten lapping liquid on the first grinding table, 10 are cleaned with deionized water
Second；
In step S502, ground 80 seconds using tungsten lapping liquid on the second grinding table, 10 are cleaned with deionized water
Second, it is ground 4 seconds using water mill liquid；
In step S503, ground 100 seconds using oxide lapping liquid on third grinding table, 10 are cleaned with deionized water
Second.
Compared with common process of the prior art, using the method for the embodiment of the present invention three, tungsten plug is not damaged, with reality
It applies example two to compare, there is further improvement.
Example IV
The embodiment of the present invention four and embodiment two differ only in will be in S402 ground 3 seconds and be extended for using water mill liquid
5 seconds, rest part was with reference to embodiment two, and details are not described herein.Fig. 6 is to be ground according to the scheme of the embodiment of the present invention four
Schematic diagram, including following key step：
In step s 601, it is ground 80 seconds using tungsten lapping liquid on the first grinding table, 10 is cleaned with deionized water
Second；
In step S602, ground 80 seconds using tungsten lapping liquid on the second grinding table, 10 are cleaned with deionized water
Second, it is ground 5 seconds using water mill liquid；
In step S603, ground 100 seconds using oxide lapping liquid on third grinding table, 10 are cleaned with deionized water
Second.
Compared with common process of the prior art, using the method for the embodiment of the present invention four, tungsten plug is not damaged, with reality
It applies example two to compare, there is further improvement；Compared with embodiment three, effect is identical.
Embodiment five
The embodiment of the present invention five and embodiment two differ only in will be in S402 ground 3 seconds and be extended for using water mill liquid
7 seconds, rest part was with reference to embodiment two, and details are not described herein.Fig. 7 is to be ground according to the scheme of the embodiment of the present invention five
Schematic diagram, including following key step：
In step s 701, it is ground 80 seconds using tungsten lapping liquid on the first grinding table, 10 is cleaned with deionized water
Second；
In step S702, ground 80 seconds using tungsten lapping liquid on the second grinding table, 10 are cleaned with deionized water
Second, it is ground 7 seconds using water mill liquid；
In step S703, ground 100 seconds using oxide lapping liquid on third grinding table, 10 are cleaned with deionized water
Second.
Compared with common process of the prior art, using the method for the embodiment of the present invention five, tungsten plug is not damaged, with reality
It applies example two to compare, there is further improvement；Compared with embodiment three and four, effect is identical.
Above-mentioned five embodiments are compared it can be found that on the basis of existing WCMP techniques, as long as on the second grinding table
After normal grinding, increase the water mill liquid milling time more than 3 seconds, i.e. the water mill time is 4 seconds (embodiment three), 5 seconds (embodiments
Four) or 7 seconds (embodiment five), there will be no the damage of tungsten plug, this is because in increased water mill step, the water mill time is more than
At 3 seconds, the lapping liquid for remaining in grinding pad and crystal column surface can be removed, stops the oxide lapping liquid such as dioxygen in lapping liquid
Water continues to corrode tungsten plug, and tungsten plug is avoided to damage, and improves product yield.Preferably, the water mill time is 5 seconds, i.e. example IV
Scheme be optimal case.That is, increase by 5 seconds after grinding stage on the second grinding table of existing WCMP grinding technics
Water mill liquid is ground, and is best grinding scheme.
During Fig. 8 is produces in batches, optimal case of the invention and the wafer yield comparison diagram of prior art production, Ke Yifa
Existing, in batch production, the product of prioritization scheme production has higher yield more stable simultaneously, shows the optimal side of the present invention
Case is also effective and feasible in batch production.By optimizing the processing technology of production equipment, tungsten plug damage is successfully solved
The problem of wound, these preferred plans have been used in batch production, and achieve the desired results.
It should be noted that the purpose that above example is only for the purpose of illustration, those skilled in the art can basis
Different grinding tables, different processing procedures and different product and form different grinding method.
According to the method for the present invention, after normal grinding, increase by second grinding removed on the wafer and remained
Lapping liquid the step of, hardly increase production cost under conditions of, it is therefore prevented that wafer is deposited in existing WCMP process of lapping
Tungsten plug degree of impairment, product yield is improved with this.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. a kind of chemical and mechanical grinding method, which is characterized in that include the following steps：
Wafer to be ground is provided, the wafer includes the interlayer insulating film with opening and covers the interlayer insulating film simultaneously
Fill the metal tungsten layer of the opening；
The first grinding is carried out to the wafer, to remove the major part metal tungsten layer on the interlayer insulating film；
The second grinding is carried out to the wafer, to remove the remaining metal tungsten layer on the interlayer insulating film, tungsten is formed and inserts
Plug；
Remove the remaining lapping liquid of the second grinding institute on the wafer.
2. according to the method described in claim 1, it is characterized in that, first grinding and the described second grinding are respectively first
It is carried out on grinding table and the second grinding table.
3. method according to claim 1 or 2, which is characterized in that second grinding removed on the wafer
Remaining lapping liquid method be included in water mill liquid stop or the wafer is ground using water mill liquid.
4. according to the method described in claim 3, it is characterized in that, the grinding of the water mill liquid and second grinding are same
It is carried out on grinding table.
5. according to the method described in claim 3, it is characterized in that, described ground using water mill liquid to what the wafer was ground
Time consuming is more than 3 seconds.
6. according to the method described in claim 1, it is characterized in that, the method further includes：It removes described on the wafer
After the second remaining lapping liquid of grinding institute, third grinding is carried out to the wafer.
7. according to the method described in claim 6, it is characterized in that, lapping liquid includes oxide used by the third is ground
Lapping liquid.
8. according to the method described in claim 5, it is characterized in that, the milling time of the water mill liquid is 4-7 seconds.
9. the according to the method described in claim 8, it is characterized in that, parameter setting of grinding table when carrying out second grinding
For：The rotating speed of grinding table is 100-110rpm/min, and the rotating speed of grinding head is 30-35rpm/min, and the pressure of grinding head is 6-
6.5psi, the rotating speed of abrasive disk are 20-25rpm/min, and the pressure of abrasive disk is 5-5.5psi, the flow of second lapping liquid
For 200-220mL/min.
10. according to the method described in claim 8, it is characterized in that, grinding when being ground using the water mill liquid
The parameter of platform is set as：The rotating speed of grinding table is 85-90rpm/min, and the rotating speed of grinding head is 25-30rpm/min, grinding head
Pressure is 5-5.5psi, and the rotating speed of abrasive disk is 15-20rpm/min, and the pressure of abrasive disk is 4.5-5psi, the flow of water mill liquid
For 180-200mL/min.
11. according to the method described in claim 1, it is characterized in that, to the wafer carry out second grinding the step of after,
Before the step of removing the second grinding institute remaining lapping liquid on the wafer, the step cleaned with deionized water is further included
Suddenly.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110666597A (en) * | 2019-10-10 | 2020-01-10 | 菲特晶(南京)电子有限公司 | Quartz wafer polishing process |
| CN113130314A (en) * | 2019-12-31 | 2021-07-16 | 无锡华润上华科技有限公司 | Semiconductor device, preparation method thereof and electronic device |
| CN115431166A (en) * | 2022-09-16 | 2022-12-06 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
| CN116175298A (en) * | 2023-05-04 | 2023-05-30 | 粤芯半导体技术股份有限公司 | Method for grinding deep contact hole structure of semiconductor |
| CN116852183A (en) * | 2023-08-02 | 2023-10-10 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
| WO2023212981A1 (en) * | 2022-05-06 | 2023-11-09 | 长鑫存储技术有限公司 | Chemical mechanical polish process method and device |
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| CN110666597A (en) * | 2019-10-10 | 2020-01-10 | 菲特晶(南京)电子有限公司 | Quartz wafer polishing process |
| CN113130314A (en) * | 2019-12-31 | 2021-07-16 | 无锡华润上华科技有限公司 | Semiconductor device, preparation method thereof and electronic device |
| CN113130314B (en) * | 2019-12-31 | 2022-09-20 | 无锡华润上华科技有限公司 | Semiconductor device, preparation method thereof and electronic device |
| WO2023212981A1 (en) * | 2022-05-06 | 2023-11-09 | 长鑫存储技术有限公司 | Chemical mechanical polish process method and device |
| CN115431166A (en) * | 2022-09-16 | 2022-12-06 | 北京烁科精微电子装备有限公司 | Wafer grinding method |
| CN116175298A (en) * | 2023-05-04 | 2023-05-30 | 粤芯半导体技术股份有限公司 | Method for grinding deep contact hole structure of semiconductor |
| CN116852183A (en) * | 2023-08-02 | 2023-10-10 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
| CN116852183B (en) * | 2023-08-02 | 2024-04-02 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
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