CN112925163A - 光掩模坯料、光掩模的制造方法以及光掩模 - Google Patents
光掩模坯料、光掩模的制造方法以及光掩模 Download PDFInfo
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- CN112925163A CN112925163A CN202011339150.7A CN202011339150A CN112925163A CN 112925163 A CN112925163 A CN 112925163A CN 202011339150 A CN202011339150 A CN 202011339150A CN 112925163 A CN112925163 A CN 112925163A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
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JP2019220060A JP7280171B2 (ja) | 2019-12-05 | 2019-12-05 | フォトマスクブランク、フォトマスクの製造方法及びフォトマスク |
JP2019-220060 | 2019-12-05 |
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CN112925163A true CN112925163A (zh) | 2021-06-08 |
CN112925163B CN112925163B (zh) | 2024-06-21 |
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US (1) | US11402744B2 (ja) |
EP (1) | EP3832388B1 (ja) |
JP (2) | JP7280171B2 (ja) |
KR (1) | KR102468612B1 (ja) |
CN (1) | CN112925163B (ja) |
SG (1) | SG10202012086PA (ja) |
TW (1) | TWI801781B (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009123167A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランクおよびその製造方法 |
CN102654730A (zh) * | 2005-07-21 | 2012-09-05 | 信越化学工业株式会社 | 光掩模坯、光掩模及其制作方法 |
CN106502043A (zh) * | 2015-09-03 | 2017-03-15 | 信越化学工业株式会社 | 光掩模坯 |
CN109782527A (zh) * | 2017-11-13 | 2019-05-21 | 信越化学工业株式会社 | 光掩模坯料和制备光掩模的方法 |
EP3575870A2 (en) * | 2018-05-31 | 2019-12-04 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, method of manufacturing photomask, and photomask |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2983020B1 (ja) | 1998-12-18 | 1999-11-29 | ホーヤ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
JP2001305713A (ja) * | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
JP4088742B2 (ja) * | 2000-12-26 | 2008-05-21 | 信越化学工業株式会社 | フォトマスクブランクス、フォトマスク及びフォトマスクブランクスの製造方法 |
JP3956103B2 (ja) * | 2002-02-26 | 2007-08-08 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクブランクの評価方法 |
JP2004053663A (ja) * | 2002-07-16 | 2004-02-19 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びフォトマスクブランクの選定方法 |
US6861180B2 (en) * | 2002-09-10 | 2005-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Contact printing as second exposure of double exposure attenuated phase shift mask process |
JP2006078825A (ja) * | 2004-09-10 | 2006-03-23 | Shin Etsu Chem Co Ltd | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
TWI476507B (zh) | 2008-09-30 | 2015-03-11 | Hoya Corp | A mask substrate, a mask, a manufacturing method thereof, and a method of manufacturing the semiconductor element |
JP6229466B2 (ja) * | 2013-12-06 | 2017-11-15 | 信越化学工業株式会社 | フォトマスクブランク |
JP6150299B2 (ja) * | 2014-03-30 | 2017-06-21 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
JP6499440B2 (ja) * | 2014-12-24 | 2019-04-10 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク |
JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
JP6341166B2 (ja) * | 2015-09-03 | 2018-06-13 | 信越化学工業株式会社 | フォトマスクブランク |
JP6158460B1 (ja) * | 2015-11-06 | 2017-07-05 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法 |
US11054735B2 (en) * | 2016-07-19 | 2021-07-06 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6677139B2 (ja) * | 2016-09-28 | 2020-04-08 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランクの製造方法 |
JP2018072543A (ja) * | 2016-10-28 | 2018-05-10 | 凸版印刷株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
JP6944255B2 (ja) * | 2017-03-14 | 2021-10-06 | Hoya株式会社 | 転写用マスクの製造方法、および半導体デバイスの製造方法 |
JP6729508B2 (ja) * | 2017-06-29 | 2020-07-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
JP6579219B2 (ja) * | 2018-05-07 | 2019-09-25 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
JP7018833B2 (ja) | 2018-06-22 | 2022-02-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
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- 2020-11-25 CN CN202011339150.7A patent/CN112925163B/zh active Active
- 2020-11-30 EP EP20210679.5A patent/EP3832388B1/en active Active
- 2020-12-01 KR KR1020200165239A patent/KR102468612B1/ko active IP Right Grant
- 2020-12-03 TW TW109142576A patent/TWI801781B/zh active
- 2020-12-03 SG SG10202012086PA patent/SG10202012086PA/en unknown
- 2020-12-04 US US17/112,839 patent/US11402744B2/en active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102654730A (zh) * | 2005-07-21 | 2012-09-05 | 信越化学工业株式会社 | 光掩模坯、光掩模及其制作方法 |
WO2009123167A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランクおよびその製造方法 |
CN106502043A (zh) * | 2015-09-03 | 2017-03-15 | 信越化学工业株式会社 | 光掩模坯 |
CN109782527A (zh) * | 2017-11-13 | 2019-05-21 | 信越化学工业株式会社 | 光掩模坯料和制备光掩模的方法 |
EP3575870A2 (en) * | 2018-05-31 | 2019-12-04 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, method of manufacturing photomask, and photomask |
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SG10202012086PA (en) | 2021-07-29 |
JP2021089377A (ja) | 2021-06-10 |
JP7280171B2 (ja) | 2023-05-23 |
CN112925163B (zh) | 2024-06-21 |
US11402744B2 (en) | 2022-08-02 |
EP3832388B1 (en) | 2022-09-14 |
JP7411840B2 (ja) | 2024-01-11 |
US20210173296A1 (en) | 2021-06-10 |
KR102468612B1 (ko) | 2022-11-17 |
JP2023065616A (ja) | 2023-05-12 |
EP3832388A1 (en) | 2021-06-09 |
KR20210070917A (ko) | 2021-06-15 |
TW202131093A (zh) | 2021-08-16 |
TWI801781B (zh) | 2023-05-11 |
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