CN112885948B - 一种具有高结构稳定性的铜硒基热电材料及其制备方法 - Google Patents
一种具有高结构稳定性的铜硒基热电材料及其制备方法 Download PDFInfo
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- CN112885948B CN112885948B CN202110047514.2A CN202110047514A CN112885948B CN 112885948 B CN112885948 B CN 112885948B CN 202110047514 A CN202110047514 A CN 202110047514A CN 112885948 B CN112885948 B CN 112885948B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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CN202110047514.2A CN112885948B (zh) | 2021-01-14 | 2021-01-14 | 一种具有高结构稳定性的铜硒基热电材料及其制备方法 |
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CN112885948B true CN112885948B (zh) | 2022-07-29 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US3051767A (en) * | 1958-11-21 | 1962-08-28 | Minnesota Mining & Mfg | Thermoelectric devices and thermoelements |
CN101421185A (zh) * | 2006-03-16 | 2009-04-29 | 巴斯夫欧洲公司 | 用于热电应用的掺杂碲化铅 |
CN105047808A (zh) * | 2015-09-11 | 2015-11-11 | 广东雷子克热电工程技术有限公司 | 一种BiSbTeSe基热电材料 |
CN105990510A (zh) * | 2015-02-04 | 2016-10-05 | 中国科学院上海硅酸盐研究所 | 一种铜硒基高性能热电材料及其制备方法 |
CN106025056A (zh) * | 2016-06-12 | 2016-10-12 | 电子科技大学 | 一种锡硫化合物热电材料的制备方法 |
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- 2021-01-14 CN CN202110047514.2A patent/CN112885948B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3051767A (en) * | 1958-11-21 | 1962-08-28 | Minnesota Mining & Mfg | Thermoelectric devices and thermoelements |
CN101421185A (zh) * | 2006-03-16 | 2009-04-29 | 巴斯夫欧洲公司 | 用于热电应用的掺杂碲化铅 |
CN105990510A (zh) * | 2015-02-04 | 2016-10-05 | 中国科学院上海硅酸盐研究所 | 一种铜硒基高性能热电材料及其制备方法 |
CN105047808A (zh) * | 2015-09-11 | 2015-11-11 | 广东雷子克热电工程技术有限公司 | 一种BiSbTeSe基热电材料 |
CN106025056A (zh) * | 2016-06-12 | 2016-10-12 | 电子科技大学 | 一种锡硫化合物热电材料的制备方法 |
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