CN112885682A - 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法 - Google Patents

一种用于多碱光电阴极基底的导电及封接薄膜及制备方法 Download PDF

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CN112885682A
CN112885682A CN202110046919.4A CN202110046919A CN112885682A CN 112885682 A CN112885682 A CN 112885682A CN 202110046919 A CN202110046919 A CN 202110046919A CN 112885682 A CN112885682 A CN 112885682A
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陈超
龚燕妮
陈坤杨
高海鹏
李晓峰
张春先
潘治云
常乐
王光凡
杜木林
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Abstract

本发明公开了一种用于多碱光电阴极基底的导电及封接薄膜及制备方法，该薄膜为在基底上的多层结构的金属薄膜，其自基底向外分别是铬层薄膜、铜层薄膜和银层薄膜，各层薄膜的厚度分别为
Figure DDA0002897673660000011
和
Figure DDA0002897673660000012
基于铬对玻璃材料的粘接性最好，用铬层作为最底层，蒸镀在基底表面，并用于连接多碱光电阴极引出阴极电流。铜和铬、银两种金属都具有良好的粘接性，用铜层作为中间层，蒸镀在铬层边缘位置，用于导电和粘接铬层和银层。银与铜、铟锡合金拥有良好的粘接性，用银层作为金属薄膜表面层，蒸镀位置与铜层一致，用于导电和管壳封接，保证微光像增强器的高真空度。本发明的薄膜具备良好的导电性，同时与铟锡合金具有良好的粘接性，也解决铟封漏气问题。

Description

一种用于多碱光电阴极基底的导电及封接薄膜及制备方法
技术领域
本发明涉及微光像增强器制造领域，具体涉及一种用于多碱光电阴极基底的导电及封接薄膜及制备方法。
背景技术
微光像增强器是微光夜视仪的核心组件，属于高真空器件，微光像增强器多碱光电阴极基底与管壳之间的导电性和封接效果会直接影响微光像增强器的性能。
微光像增强器在工作时，需要对阴极施加稳定的电压获得一个稳定的电场。在电场的作用下，多碱光电阴极产生的电子撞击微通道板，进行二次电子发射，实现电子倍增。
多碱光电阴极制作时，根据采集到的阴极光电流变化曲线来控制碱源蒸发电流，进而控制多碱光电阴极的制作。因此，需要多碱光电阴极基底具有良好的导电性。
微光像增强器主要由阳极荧光屏、管壳和多碱光电阴极组成，多碱光电阴极基底与管壳的密封性是影响微光像增强器真空度的重要原因。光电阴极基底使用铟封法与管壳封接，因此还需要多碱光电阴极基底与铟锡合金具有良好的粘接性。
多碱光电阴极基底与管壳的封接方法通常采用铟封法，虽然铟锡合金与玻璃材料具有良好的粘接性，但在实际生产中铟封漏气的比例依旧很高。
发明内容
由于多碱光电阴极基底属于玻璃材料，本身不具备导电性。因此，一方面需要在多碱光电阴极基底表面蒸镀金属薄膜，使得基底具备导电性；另一方面，为了降低铟封法引起的像增强器漏气比例，要求蒸镀的多碱光电阴极基底金属薄膜不但需要具备良好的导电性，还需要与铟锡合金具有良好的粘接性，解决铟封漏气问题。
为解决现有技术存在的技术问题、实现上述两个方面的需求，本发明采用的技术方案为：在多碱光电阴极基底蒸镀多层结构金属薄膜，在满足拥有良好粘接性的前提下，使得各层金属薄膜之间还具有良好的导电性。
一种用于多碱光电阴极基底的导电及封接薄膜，所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜，铬层薄膜蒸镀在基底表面，铜层薄膜蒸镀在铬层薄膜的边缘位置，银层薄膜蒸镀在表面层。
所述铬层薄膜、铜层薄膜和银层薄膜的厚度分别为
Figure BDA0002897673640000021
和
Figure BDA0002897673640000022
上述薄膜的制备方法为：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度，开始镀膜；
②完成镀膜后，取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀铜层，镀铜结束后，设定蒸镀银层，再进行银层蒸镀。
本发明的原理及有益效果：
铬对玻璃材料的粘接性最好，因此选用铬层作为最底层，蒸镀在基底表面，并用于连接多碱光电阴极引出阴极电流。铜和铬、银两种金属都具有良好的粘接性，因此选择铜层作为中间层，蒸镀在铬层边缘位置，用于导电和粘接铬层和银层。银与铜、铟锡合金拥有良好的粘接性，选用银层作为金属薄膜表面层，蒸镀位置与铜层一致，用于导电和管壳封接，保证微光像增强器的高真空度。
附图说明：
图1：光电阴极基底导电封接膜层示意图。
图2：光电阴极基底导电封接膜剖面图。
图中：1—多碱光电阴极基底，2—铬层，3—铜层，4—银层。
具体实施方式
如图1和图2所示，一种用于多碱光电阴极基底的导电及封接薄膜，所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜，铬层蒸镀在基底表面，从基底边缘覆盖至中心台阶面内4mm。铜层蒸镀在铬层薄膜正上方，覆盖范围从基底边缘向内延伸6mm。银层蒸镀在铜层薄膜表面，完全覆盖铜层。所述铬层薄膜、铜层薄膜和银层薄膜的厚度分别为
Figure BDA0002897673640000031
和
Figure BDA0002897673640000032
上述薄膜的制备方法为：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度为
Figure BDA0002897673640000033
开始镀膜；
②完成镀膜后，取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀
Figure BDA0002897673640000034
铜层，镀铜结束后，等待10min再进行银层蒸镀。设定蒸镀银层厚度为
Figure BDA0002897673640000035
现有封接技术直接使用铬作为导电层和封接薄膜，铟锡合金作为基底封接材料。现用两种封接方法各封接400个样品，采用现有的单铬层导电封接薄膜进行封接，在成品中存在17个漏气产品，漏气比例4.25％，测试电阻为0.1Ω。采用本发明中的铬铜银导电封接薄膜进行封接，成品中仅存在6个漏气产品，漏气比例1.5％，与现有单铬层导电封接薄膜相比，漏气比例明显降低。测试其电阻为0.02Ω，较现有方法的电阻值也有明显下降。

Claims (5)

1.一种用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜；
所述铬层薄膜蒸镀在基底表面，从基底边缘覆盖至中心台阶面内4mm；
所述铜层薄膜蒸镀在铬层薄膜正上方，覆盖范围从基底边缘向内延伸6mm；
所述银层薄膜蒸镀在铜层薄膜表面，完全覆盖铜层薄膜。
2.根据权利要求1所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述铬层薄膜的厚度为
Figure FDA0002897673630000011
3.根据权利要求2所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述铜层薄膜的厚度为
Figure FDA0002897673630000012
4.根据权利要求3所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述银层薄膜的厚度为
Figure FDA0002897673630000013
5.根据权利要求1至4任一项所述的用于多碱光电阴极基底的导电及封接薄膜的制备方法，其特征在于包括以下步骤：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度，开始镀膜；
②取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀铜层，镀铜结束后，设定蒸镀银层，再进行银层蒸镀。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1525912A (zh) * 2001-05-09 2004-09-01 Cp���ֹ�˾ 铟锡氧化物的透明导电层状镀层
CN101159209A (zh) * 2006-11-01 2008-04-09 深圳大学 一种场助多碱红外光电阴极
CN101393837A (zh) * 2008-11-10 2009-03-25 中国兵器工业第二〇五研究所 纳秒响应微光像增强器的光电阴极及其制作方法
CN108022819A (zh) * 2017-12-08 2018-05-11 北方夜视技术股份有限公司 一种高增益、高分辨力、大口径像增强管的制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1525912A (zh) * 2001-05-09 2004-09-01 Cp���ֹ�˾ 铟锡氧化物的透明导电层状镀层
CN101159209A (zh) * 2006-11-01 2008-04-09 深圳大学 一种场助多碱红外光电阴极
CN101393837A (zh) * 2008-11-10 2009-03-25 中国兵器工业第二〇五研究所 纳秒响应微光像增强器的光电阴极及其制作方法
CN108022819A (zh) * 2017-12-08 2018-05-11 北方夜视技术股份有限公司 一种高增益、高分辨力、大口径像增强管的制作方法

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