CN112885682B - 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法 - Google Patents

一种用于多碱光电阴极基底的导电及封接薄膜及制备方法 Download PDF

Info

Publication number
CN112885682B
CN112885682B CN202110046919.4A CN202110046919A CN112885682B CN 112885682 B CN112885682 B CN 112885682B CN 202110046919 A CN202110046919 A CN 202110046919A CN 112885682 B CN112885682 B CN 112885682B
Authority
CN
China
Prior art keywords
film
substrate
layer
copper
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110046919.4A
Other languages
English (en)
Other versions
CN112885682A (zh
Inventor
陈超
龚燕妮
陈坤杨
高海鹏
李晓峰
张春先
潘治云
常乐
王光凡
杜木林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Night Vision Technology Co Ltd
Original Assignee
North Night Vision Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Night Vision Technology Co Ltd filed Critical North Night Vision Technology Co Ltd
Priority to CN202110046919.4A priority Critical patent/CN112885682B/zh
Publication of CN112885682A publication Critical patent/CN112885682A/zh
Application granted granted Critical
Publication of CN112885682B publication Critical patent/CN112885682B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
    • H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

本发明公开了一种用于多碱光电阴极基底的导电及封接薄膜及制备方法，该薄膜为在基底上的多层结构的金属薄膜，其自基底向外分别是铬层薄膜、铜层薄膜和银层薄膜，各层薄膜的厚度分别为
Figure DDA0002897673660000011
和
Figure DDA0002897673660000012
基于铬对玻璃材料的粘接性最好，用铬层作为最底层，蒸镀在基底表面，并用于连接多碱光电阴极引出阴极电流。铜和铬、银两种金属都具有良好的粘接性，用铜层作为中间层，蒸镀在铬层边缘位置，用于导电和粘接铬层和银层。银与铜、铟锡合金拥有良好的粘接性，用银层作为金属薄膜表面层，蒸镀位置与铜层一致，用于导电和管壳封接，保证微光像增强器的高真空度。本发明的薄膜具备良好的导电性，同时与铟锡合金具有良好的粘接性，也解决铟封漏气问题。

Description

一种用于多碱光电阴极基底的导电及封接薄膜及制备方法
技术领域
本发明涉及微光像增强器制造领域，具体涉及一种用于多碱光电阴极基底的导电及封接薄膜及制备方法。
背景技术
微光像增强器是微光夜视仪的核心组件，属于高真空器件，微光像增强器多碱光电阴极基底与管壳之间的导电性和封接效果会直接影响微光像增强器的性能。
微光像增强器在工作时，需要对阴极施加稳定的电压获得一个稳定的电场。在电场的作用下，多碱光电阴极产生的电子撞击微通道板，进行二次电子发射，实现电子倍增。
多碱光电阴极制作时，根据采集到的阴极光电流变化曲线来控制碱源蒸发电流，进而控制多碱光电阴极的制作。因此，需要多碱光电阴极基底具有良好的导电性。
微光像增强器主要由阳极荧光屏、管壳和多碱光电阴极组成，多碱光电阴极基底与管壳的密封性是影响微光像增强器真空度的重要原因。光电阴极基底使用铟封法与管壳封接，因此还需要多碱光电阴极基底与铟锡合金具有良好的粘接性。
多碱光电阴极基底与管壳的封接方法通常采用铟封法，虽然铟锡合金与玻璃材料具有良好的粘接性，但在实际生产中铟封漏气的比例依旧很高。
发明内容
由于多碱光电阴极基底属于玻璃材料，本身不具备导电性。因此，一方面需要在多碱光电阴极基底表面蒸镀金属薄膜，使得基底具备导电性；另一方面，为了降低铟封法引起的像增强器漏气比例，要求蒸镀的多碱光电阴极基底金属薄膜不但需要具备良好的导电性，还需要与铟锡合金具有良好的粘接性，解决铟封漏气问题。
为解决现有技术存在的技术问题、实现上述两个方面的需求，本发明采用的技术方案为：在多碱光电阴极基底蒸镀多层结构金属薄膜，在满足拥有良好粘接性的前提下，使得各层金属薄膜之间还具有良好的导电性。
一种用于多碱光电阴极基底的导电及封接薄膜，所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜，铬层薄膜蒸镀在基底表面，铜层薄膜蒸镀在铬层薄膜的边缘位置，银层薄膜蒸镀在表面层。
所述铬层薄膜、铜层薄膜和银层薄膜的厚度分别为
Figure GDA0003581562810000021
和
Figure GDA0003581562810000022
上述薄膜的制备方法为：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度，开始镀膜；
②完成镀膜后，取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀铜层，镀铜结束后，设定蒸镀银层，再进行银层蒸镀。
本发明的原理及有益效果：
铬对玻璃材料的粘接性最好，因此选用铬层作为最底层，蒸镀在基底表面，并用于连接多碱光电阴极引出阴极电流。铜和铬、银两种金属都具有良好的粘接性，因此选择铜层作为中间层，蒸镀在铬层边缘位置，用于导电和粘接铬层和银层。银与铜、铟锡合金拥有良好的粘接性，选用银层作为金属薄膜表面层，蒸镀位置与铜层一致，用于导电和管壳封接，保证微光像增强器的高真空度。
附图说明：
图1：光电阴极基底导电封接膜层示意图。
图2：光电阴极基底导电封接膜剖面图。
图中：1—多碱光电阴极基底，2—铬层，3—铜层，4—银层。
具体实施方式
如图1和图2所示，一种用于多碱光电阴极基底的导电及封接薄膜，所述多碱光电阴极基底由位于底部的圆柱体和位于所述圆柱体正上方的锥台组成，所述多碱光电阴极基底的表面由位于基底边缘处的环形平面、位于所述环形平面以内的锥台斜面和位于锥台顶部的中心台阶面三部分组成。所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜，铬层蒸镀在基底的表面，从基底边缘覆盖至环形平面、锥台斜面以及中心台阶面内4mm。铜层蒸镀在所述环形平面内的铬层薄膜正上方，覆盖范围从基底边缘向的自外向内延伸6mm的范围。银层蒸镀在铜层薄膜表面，完全覆盖铜层。所述铬层薄膜、铜层薄膜和银层薄膜的厚度分别为
Figure GDA0003581562810000032
和
Figure GDA0003581562810000031
上述薄膜的制备方法为：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度为
Figure GDA0003581562810000033
开始镀膜；
②完成镀膜后，取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀
Figure GDA0003581562810000034
铜层，镀铜结束后，等待10min再进行银层蒸镀。设定蒸镀银层厚度为
Figure GDA0003581562810000035
现有封接技术直接使用铬作为导电层和封接薄膜，铟锡合金作为基底封接材料。现用两种封接方法各封接400个样品，采用现有的单铬层导电封接薄膜进行封接，在成品中存在17个漏气产品，漏气比例4.25％，测试电阻为0.1Ω。采用本发明中的铬铜银导电封接薄膜进行封接，成品中仅存在6个漏气产品，漏气比例1.5％，与现有单铬层导电封接薄膜相比，漏气比例明显降低。测试其电阻为0.02Ω，较现有方法的电阻值也有明显下降。

Claims (5)

1.一种用于多碱光电阴极基底的导电及封接薄膜，所述多碱光电阴极基底由位于底部的圆柱体和位于所述圆柱体正上方的锥台组成，所述多碱光电阴极基底的表面由位于基底边缘处的环形平面、位于所述环形平面以内的锥台斜面和位于锥台顶部的中心台阶面三部分组成；其特征在于：
所述的薄膜为在基底上的蒸镀的铬层薄膜、铜层薄膜和银层薄膜；
所述铬层薄膜蒸镀在基底的表面，从基底边缘覆盖至所述环形平面、锥台斜面以及中心台阶面的自外向内延伸4mm的范围；
所述铜层薄膜蒸镀在所述环形平面内的铬层薄膜正上方，覆盖范围从基底最外侧边缘向内延伸6mm；
所述银层薄膜蒸镀在铜层薄膜表面，完全覆盖铜层薄膜。
2.根据权利要求1所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述铬层薄膜的厚度为
Figure FDA0003581562800000011
3.根据权利要求2所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述铜层薄膜的厚度为
Figure FDA0003581562800000012
4.根据权利要求3所述的用于多碱光电阴极基底的导电及封接薄膜，其特征在于：
所述银层薄膜的厚度为
Figure FDA0003581562800000013
5.一种制备如权利要求1至4任一项所述的用于多碱光电阴极基底的导电及封接薄膜的方法，其特征在于包括以下步骤：
①将多碱光电阴极基底放入镀铬用的夹具内，镀膜机内放入铬源，将装有阴极基底的夹具放入镀膜机内，设定镀膜厚度，开始镀膜；
②取出镀有铬层的阴极基底放入镀铜用夹具，镀膜机内放入铜源和银源，将镀膜机程序设定为先镀铜层，镀铜结束后，设定蒸镀银层，再进行银层蒸镀。
CN202110046919.4A 2021-01-14 2021-01-14 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法 Active CN112885682B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110046919.4A CN112885682B (zh) 2021-01-14 2021-01-14 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110046919.4A CN112885682B (zh) 2021-01-14 2021-01-14 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法

Publications (2)

Publication Number Publication Date
CN112885682A CN112885682A (zh) 2021-06-01
CN112885682B true CN112885682B (zh) 2022-07-26

Family

ID=76047939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110046919.4A Active CN112885682B (zh) 2021-01-14 2021-01-14 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法

Country Status (1)

Country Link
CN (1) CN112885682B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1525912A (zh) * 2001-05-09 2004-09-01 Cp���ֹ�˾ 铟锡氧化物的透明导电层状镀层
CN101159209A (zh) * 2006-11-01 2008-04-09 深圳大学 一种场助多碱红外光电阴极
CN101393837A (zh) * 2008-11-10 2009-03-25 中国兵器工业第二〇五研究所 纳秒响应微光像增强器的光电阴极及其制作方法
CN108022819A (zh) * 2017-12-08 2018-05-11 北方夜视技术股份有限公司 一种高增益、高分辨力、大口径像增强管的制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1525912A (zh) * 2001-05-09 2004-09-01 Cp���ֹ�˾ 铟锡氧化物的透明导电层状镀层
CN101159209A (zh) * 2006-11-01 2008-04-09 深圳大学 一种场助多碱红外光电阴极
CN101393837A (zh) * 2008-11-10 2009-03-25 中国兵器工业第二〇五研究所 纳秒响应微光像增强器的光电阴极及其制作方法
CN108022819A (zh) * 2017-12-08 2018-05-11 北方夜视技术股份有限公司 一种高增益、高分辨力、大口径像增强管的制作方法

Also Published As

Publication number Publication date
CN112885682A (zh) 2021-06-01

Similar Documents

Publication Publication Date Title
CN109411317B (zh) 错置相对角形弧环面阴极三曲干线弯门控结构的发光显示器
US7997949B2 (en) External-electrode discharge lamp with no light leakage from external electrode portion
CN104037359B (zh) 一种oled阴极结构及其制造方法
CN109411318B (zh) 折弯式异边空环面阴极背对背斜曲弧门控结构的发光显示器
CN108055790B (zh) 一种电路板及其制作方法和应用
TW200937653A (en) Thin film type solar cell and method for manufacturing the same
CN204809042U (zh) 抗氧化电容器薄膜
CN108022819A (zh) 一种高增益、高分辨力、大口径像增强管的制作方法
CN112885682B (zh) 一种用于多碱光电阴极基底的导电及封接薄膜及制备方法
CN109473327B (zh) 层叠双雁翅空环尖体阴极坡浪混合线门控结构的发光显示器
CN108039379B (zh) 一种金属箔片表面金属掺杂的氧化锌复合电极薄膜及其制备方法
CN203708628U (zh) 高导热的陶瓷铜复合基板
CN110806657A (zh) 环周双连凹面阴极加固弧直坡门控结构的发光背光源
CN110676142A (zh) 凸斜坡连面环阴极叉分枝直曲门控结构的发光背光源
CN108878251B (zh) 一种微通道板组件
CN110690091A (zh) 单环角锥体斜面阴极凹直弧段门控结构的发光背光源
CN104867674A (zh) 一种新型薄膜电容用金属化薄膜的制备方法
CN209544158U (zh) 一种电容器用金属化薄膜
CN101465387A (zh) 彩色透明光电幕墙玻璃
US20110192463A1 (en) Cigs solar cell structure and method for fabricating the same
CN206887215U (zh) 一种制备光电阴极镀层用镍合金无缝蒸发器
CN110676139A (zh) 环周连续双斜面阴极凹凸弧叠门控结构的发光背光源
CN218783049U (zh) 一种led灯珠、显示模组及电子设备
WO2013077626A1 (en) Solar cell and method of fabricating the same
CN209702848U (zh) 一种靶材

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant