CN112828449A - Component prepared by processing diamond material by laser and preparation method thereof - Google Patents
Component prepared by processing diamond material by laser and preparation method thereof Download PDFInfo
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- CN112828449A CN112828449A CN202110014240.7A CN202110014240A CN112828449A CN 112828449 A CN112828449 A CN 112828449A CN 202110014240 A CN202110014240 A CN 202110014240A CN 112828449 A CN112828449 A CN 112828449A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a method for preparing a component by laser processing a diamond material, which adopts the following devices: the laser is used for controlling a beam shutter output by the laser and is used for placing a workbench of the diamond; a focusing lens is arranged between the laser head of the laser and the workbench; irradiating laser emitted by a laser on the diamond through a focusing lens; by controlling the relative movement of the laser spot and the workbench, the laser is focused on the surface or the interior of the diamond; by adjusting the output power of the laser, the pulse repetition frequency of the laser output and the three-dimensional moving speed of the laser spot relative to the workbench, the diamond material in the laser radiation area is converted into a graphite phase and an amorphous carbon phase, and the conductivity and the electromagnetic wave transmittance of the material in the laser radiation area are changed. The invention also discloses a component prepared by the method. The invention can process freely designed electromagnetic wave modulator, resistor, capacitor and other devices on the surface and inside of diamond.
Description
Technical Field
The invention relates to an electromagnetic wave modulation device and a preparation method thereof, in particular to a device prepared by processing a diamond material by laser and a preparation method thereof.
Background
At present, the laser technology is continuously developed, and the application of the laser technology is deeply applied to the fields of material science, optoelectronic devices, 3D printing, biomedicine and the like. Compared with a long pulse laser, an ultrashort pulse laser has an extremely short pulse width, and when the laser is applied to a target material, no significant damage occurs near a focal region, and influences such as heat conduction in a short time can be ignored. With the development of science and technology, the development of the information-oriented society is significantly promoted by the microelectronic technology, the silicon material still occupies more than 90% of the semiconductor material field at present, and the new generation of semiconductor material, i.e. the third generation wide bandgap and ultra wide bandgap semiconductor material, is more and more emphasized. Diamond belongs to an ultra-wide bandgap semiconductor material and is also an ultra-hard material. The superhard material is a material with the Vickers hardness of more than 40GPa, and the material has covalent bonds with high electron density and high bond energy, the corrosion resistance and excellent photoelectric property of diamond, so that the superhard material can be used as an important optical material and an electronic material.
Some components such as electromagnetic wave modulators are mainly realized based on a lithography technology of a Si substrate, for example, in the chinese patent application No. 202010166069.7, the technology etches on a Si surface, and the structure realizes modulation of electromagnetic waves, but the Si substrate has a low transmittance of electromagnetic waves, and in addition, the etched structure is limited by processing precision and the like and the limit of the structure itself, and it is difficult to realize a high modulation depth of electromagnetic waves of a target waveband. For another example, chinese patent application No. 201911264503.9, 201810223513.7 discloses an electromagnetic wave modulator with an electro-substrate conductivity or carrier concentration varying, however, the range of variation of the substrate material conductivity or carrier concentration is limited, and complete phase transition cannot be achieved, thereby limiting the modulation depth of the modulator.
Disclosure of Invention
The invention provides a component prepared by processing a diamond material by laser and a preparation method thereof, aiming at solving the technical problems in the prior art.
The technical scheme adopted by the invention for solving the technical problems in the prior art is as follows: a method for preparing components by laser processing diamond materials adopts the following devices: the laser device comprises a laser, a beam shutter for controlling laser output of the laser device, and a workbench for placing diamond materials; a focusing lens for focusing is arranged between a laser head of the laser and the workbench; enabling laser emitted by a laser to pass through a focusing lens and irradiate on the diamond material on the workbench; by controlling the relative movement of the laser spot and the workbench, the laser is focused on the surface or the interior of the diamond; by adjusting the optical characteristic parameters of the focusing lens, the output power of laser, the pulse repetition frequency of laser output and the three-dimensional movement speed of laser spots relative to the workbench, the diamond material in the laser radiation area is converted into a graphite phase and an amorphous carbon phase, and the electrical conductivity of the material in the laser radiation area and the transmittance of electromagnetic waves are further changed.
Further, the laser output by the laser has the energy range: 30 nJ-30 muJ, the pulse repetition frequency is more than or equal to 100kHz, and the pulse width is less than 100 ps.
Furthermore, a first reflecting mirror and a second reflecting mirror are arranged between a laser head and a focusing lens of the laser; the laser output by the laser sequentially passes through the first reflector and the second reflector and then is emitted to the focusing lens.
Furthermore, a half-wave plate and a polarization beam splitter are arranged between a laser head of the laser and the first reflecting mirror; the laser emitted by the laser sequentially passes through the half-wave plate and the polarization beam splitter and then is emitted to the first reflecting mirror.
The invention also provides a component which is prepared by adopting the method for preparing the component by processing the diamond material by using the laser.
Further, the component is an electromagnetic wave modulator.
Further, the component is a resistor.
Further, the component is a capacitor.
Further, the component is a transistor.
Further, the component is an integrated circuit.
The invention has the advantages and positive effects that: the invention adopts a laser, a beam shutter and a three-dimensional moving workbench; focusing laser on the surface or inside of the diamond; by adjusting the optical characteristic parameters of the focusing lens, the output power of the laser, the pulse repetition frequency and the three-dimensional moving speed of the workbench, the conductivity of the material in a laser radiation area and the transmittance of electromagnetic waves are changed, the three-dimensional moving workbench is matched with the linkage of laser, and various three-dimensional shapes and structures can be photoetched on the surface and the inside of a diamond material by using ultrashort pulse laser, so that electronic components and photoelectric components such as an electromagnetic wave modulator, a resistor, a capacitor and the like are manufactured.
The diamond is a material which resists strong acid and alkali corrosion, has very good thermal conductivity and super hardness and abrasion resistance, and has the characteristics of wide application prospect and easy integration along with the development of diamond film technology and the research promotion of carbon-based electronic, optical and optoelectronic devices.
The invention has the following application prospect and advantages: (1) the technology can write freely designed electromagnetic wave modulation devices in the diamond, and comprises two-dimensional or three-dimensional microstructure devices, (2) the electromagnetic wave range can cover visible light, infrared, terahertz and high-frequency microwave wave bands, (3) electric devices and electronic circuits can be scribed on the surface and inside of the diamond, the conductivity of a processing area can be adjusted in a large range, (4) the prepared devices can be freely designed and integrated in multiple functions, (5) the prepared devices are high in precision and free from breakage and scratch, (6) the processing conditions are easy to meet, and (7) the prepared devices can be used in extreme environments.
Drawings
Fig. 1 is a flow chart of the operation of a method for manufacturing a device by laser processing a diamond material according to the present invention.
Fig. 2 is an optical path diagram of a method for manufacturing a device by laser processing a diamond material according to the present invention.
In the figure: 1. a femtosecond laser; 2. a half-wave plate; 3. a polarizing beam splitter; 4. a first lens; 5. a second lens; 6. a beam shutter; 7. a first reflector; 8. a charge-coupled element; 9. a zoom lens; 10. a beam splitter; 11. a white light source; 12. a dichroic mirror; 13. a focusing lens; 14. a diamond material; 15. a work bench.
Detailed Description
For further understanding of the contents, features and effects of the present invention, the following embodiments are enumerated in conjunction with the accompanying drawings, and the following detailed description is given:
referring to fig. 1 to 2, a method for manufacturing a device by laser processing a diamond material, includes the following steps: a laser, a beam shutter 6 for controlling the laser output of the laser, a table 15 on which a diamond material 14 is placed; a focusing lens 13 for focusing is arranged between a laser head of the laser and the workbench 15; the laser emitted by the laser passes through a focusing lens 13 and irradiates a diamond material 14 on a workbench 15; by controlling the relative movement of the laser spot and the workbench 15, the laser is focused on the surface or the interior of the diamond; by adjusting the optical characteristic parameters of the focusing lens, the output power of the laser, the pulse repetition frequency of the laser output and the three-dimensional movement speed of the laser spot relative to the worktable 15, the diamond material 14 in the irradiation area is converted into a graphite phase and an amorphous carbon phase, and the electrical conductivity of the material in the laser irradiation area and the transmittance of electromagnetic waves are further changed.
Optical components such as a laser for emitting laser can be kept still, and the workbench is a three-dimensional moving workbench. Thus, the laser output by the laser can move relative to the workbench 15; optical components such as a laser emitting laser and the like can also be arranged on a movable machining head, the workbench is static, and the machining head moves three-dimensionally relative to the workbench.
The optical characteristic parameters of the focusing lens can be adjusted by replacing the lens.
Preferably, the laser may be a femtosecond laser or a picosecond laser. The energy range of the laser output by the laser can be as follows: 30 nJ-30 muJ, the pulse repetition frequency can be more than or equal to 100kHz, and the pulse width can be less than 100 ps.
Preferably, a first reflecting mirror 7 and a second reflecting mirror are further arranged between the laser head of the laser and the focusing lens 13, and the second reflecting mirror can be a dichroic mirror 12; the laser emitted by the laser sequentially passes through the first reflecting mirror 7 and the dichroic mirror 12 and then is incident on the focusing lens 13.
Preferably, a half-wave plate 2 and a polarization beam splitter 3 can be arranged between the laser head of the laser and the first reflecting mirror 7; laser emitted by the laser sequentially passes through the half-wave plate 2 and the polarization beam splitter 3 and then is emitted to the first reflecting mirror 7. The combination of the half-wave plate 2 and the polarization beam splitter 3 can be used to assist in adjusting the laser power.
Fig. 2 is a preferred embodiment of the present invention, which employs the following: the device comprises a femtosecond laser 1, a half-wave plate 2, a polarization beam splitter 3, a first lens 4, a second lens 5, a light beam shutter 6, a first reflector 7, a charge coupling element 8, a zoom lens 9, a spectroscope 10, a white light source 11, a dichroic mirror 12, a focusing lens 13 and a workbench 15; the diamond material 14 is processed, a laser beam emitted by the femtosecond laser 1 sequentially passes through the half-wave plate 2, the polarization beam splitter 3, the first lens 4, the second lens 5, the beam shutter 6, the first reflector 7, the dichroic mirror 12 and the focusing lens 13 to reach the workbench 15, and the diamond material 14 is processed. The white light source 11 is used for adjustment assistance and real-time monitoring and is not used for processing the diamond material 14.
Wherein, the femtosecond laser light source: the wavelength of the femtosecond laser output by a light source is 1040nm, the repetition frequency is 500kHz, the Pulse width is 270fs, the maximum output power is 3W, and the diameter of a light spot is about 2.8 mm.
The half-wave plate is a 2-th wave plate (lambda/2 plate) and is used for adjusting the polarization state of the femtosecond laser.
A Polarization Beam Splitter prism 3 (PBS) can select the propagation direction of the light Beam according to different Polarization states of the laser light. The combination of the half-wave plate and the polarization beam splitting prism makes it possible to adjust the energy of the output laser light by rotating the angle of the half-wave plate.
The first lens 4 is used for expanding laser; the focal length ratio is 1: 2.
The second lens 5 is used for expanding the laser; the focal length ratio is 1: 2.
The beam Shutter 6, i.e. an electronic Shutter (Shutter), can be remotely controlled by a computer to control the laser exposure time, and the shortest opening and closing time of the beam Shutter 6 is 5 ms.
The first reflecting mirror 7 and the dichroic mirror can be used for adjusting the direction of the laser light path.
A Charge coupled device 8 (CCD) is used for collecting image information.
The zoom lens 9 is a lens group for adjusting imaging magnification.
The focusing lens 13 is used for focusing. An achromatic microscope lens (NA 0.4) with a numerical aperture of 0.4 may be used to focus the laser light into a spot with a beam diameter of about 4.5 μm.
The white Light source 11 is configured by a white-Light illumination Light Emitting Diode (LED).
The diamond material 14 is fixed on an electric three-dimensional displacement workbench (XYZ), and the movement of the workbench can be controlled by a Labview program written on a computer, so that the femtosecond laser scans a processed sample. The minimum movement of the movable stage was 100nm, the stroke was 100mm, and the minimum movement speed was 1 μm/s.
The invention also provides a component which is prepared by adopting the method for preparing the component by processing the diamond material by using the laser.
The component can be one of an electromagnetic wave modulator, a resistor, a capacitor and a transistor. The above-mentioned components can also be integrated circuits.
The working flow of the present invention will be specifically described below with a method for manufacturing an electromagnetic wave modulator of 0.45 μm to 3 cm by laser processing a diamond material.
Step 1, carrying out ultrasonic cleaning on the surface of the diamond by using alcohol or acetone.
The lens of the focusing lens 13 can be selected to have NA of 0.4, the scanning speed of the worktable 15 is 1mm/s, and the grating spacing is set to be 4 micrometers, 10 micrometers, 20 micrometers and 40 micrometers in sequence.
And 3, fixing the diamond to be processed on the movable workbench, starting the laser and the movable workbench 15, and enabling the workbench 15 to move along a processing track set by a processor such as a computer and the like, so as to realize photoetching of the components with the three-dimensional structure.
The number of repeated scans is adjusted. The processing along the track can be repeated.
And 4, processing and post-processing, and ultrasonically cleaning the surface of the sample again.
When processing electronic components, the processing parameters may be adjusted, such as: by changing the laser power, the scanning speed, the repeated scanning times and the like, the laser power can be adjusted to 150mW, the scanning speed is set to be 0.1mm/s, and the repeated scanning times are set to be 3 times, so that the electronic component can be prepared.
The laser may be a femtosecond laser produced by the prior art. The optical device may be a commercial optical element. The machining workbench can be a commercial three-dimensional high-precision translation table. The diamond sample may be a commercial diamond single crystal wafer. The cleaning apparatus may be a commercial ultrasonic cleaning apparatus.
The working principle of the invention is as follows:
the processing is carried out by using a femtosecond laser, and the laser is focused on the surface or the inner part of the diamond through an objective lens. Under the condition that the femtosecond laser peak energy is high, the diamond is converted into a graphite phase and an amorphous carbon phase, the transmittance of electromagnetic waves is greatly reduced, and therefore the modulation effect on the electromagnetic waves can be achieved. The large change in conductivity makes this technique possible to fabricate electrical devices, scribe electronic circuitry on and within the diamond surface.
By adding the high-speed beam shutter 6 on the beam path, the laser can be kept open, whether the laser irradiates on the sample or not is controlled through the beam shutter 6, the laser keeps an output state, whether the sample is irradiated or not is controlled through the shutter, and the repetition frequency and the pulse width of laser emission pulses are controlled by a laser control system.
By providing optical devices, for example, a half-wave plate 2, a first reflecting mirror 7, a dichroic mirror 12, a focusing lens 13, and the like in this order, laser light emitted from a laser passes through the half-wave plate 2, the first reflecting mirror 7, the dichroic mirror 12, the focusing lens 13, and the like in this order, and an appropriate optical path is constructed, and the laser beam is irradiated perpendicularly onto the diamond material 14 on the three-dimensional moving table 15.
The above-mentioned embodiments are only for illustrating the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to carry out the same, and the present invention shall not be limited to the embodiments, i.e. the equivalent changes or modifications made within the spirit of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A method for preparing components by laser processing diamond materials is characterized in that the following devices are adopted: the laser device comprises a laser, a beam shutter for controlling laser output of the laser device, and a workbench for placing diamond materials; a focusing lens for focusing is arranged between a laser head of the laser and the workbench; enabling laser emitted by a laser to pass through a focusing lens and irradiate on the diamond material on the workbench; by controlling the relative movement of the laser spot and the workbench, the laser is focused on the surface or the interior of the diamond; by adjusting the optical characteristic parameters of the focusing lens, the output power of laser, the pulse repetition frequency of laser output and the three-dimensional movement speed of laser spots relative to the workbench, the diamond material in the laser radiation area is converted into a graphite phase and an amorphous carbon phase, and the electrical conductivity of the material in the laser radiation area and the transmittance of electromagnetic waves are further changed.
2. A method for fabricating a component using laser machining diamond material as claimed in claim 1, wherein the laser outputs laser light having an energy range of: 30 nJ-30 muJ, the pulse repetition frequency is more than or equal to 100kHz, and the pulse width is less than 100 ps.
3. A method for manufacturing a component using laser machining a diamond material as claimed in claim 1, wherein a first mirror and a second mirror are further disposed between a laser head and a focusing lens of the laser; the laser emitted by the laser sequentially passes through the first reflector and the second reflector and then is emitted to the focusing lens.
4. A method for manufacturing a component using laser machining diamond material as claimed in claim 3, wherein a half wave plate and a polarizing beam splitter are further provided between the laser head and the first mirror of the laser; the laser emitted by the laser sequentially passes through the half-wave plate and the polarization beam splitter and then is emitted to the first reflecting mirror.
5. A component produced by a method of producing a component by laser machining a diamond material according to any one of claims 1 to 4.
6. The component according to claim 5, wherein the component is an electromagnetic wave modulator.
7. A component as claimed in claim 5, wherein the component is a resistor.
8. A component as claimed in claim 5, wherein the component is a capacitor.
9. A component as claimed in claim 5, wherein the component is a transistor.
10. A component as claimed in claim 5, wherein the component is an integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110014240.7A CN112828449A (en) | 2021-01-06 | 2021-01-06 | Component prepared by processing diamond material by laser and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110014240.7A CN112828449A (en) | 2021-01-06 | 2021-01-06 | Component prepared by processing diamond material by laser and preparation method thereof |
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| CN112828449A true CN112828449A (en) | 2021-05-25 |
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| CN202110014240.7A Pending CN112828449A (en) | 2021-01-06 | 2021-01-06 | Component prepared by processing diamond material by laser and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114083139A (en) * | 2021-12-31 | 2022-02-25 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN115229647A (en) * | 2022-07-20 | 2022-10-25 | 华侨大学 | Device and method for femtosecond laser-assisted diamond polishing |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4467172A (en) * | 1983-01-03 | 1984-08-21 | Jerry Ehrenwald | Method and apparatus for laser engraving diamonds with permanent identification markings |
| CN101576711A (en) * | 2008-12-31 | 2009-11-11 | 南开大学 | Device and method for preparing optical waveguide in transparent solid material by femtosecond laser |
| CN109551335A (en) * | 2018-11-26 | 2019-04-02 | 南京航空航天大学 | A kind of technique of laser assisted accurate grinding transparent material |
| CN110323132A (en) * | 2019-07-02 | 2019-10-11 | 北京科技大学 | A method of reducing hydrogen terminal diamond ohmic contact resistance |
| CN111093885A (en) * | 2017-08-22 | 2020-05-01 | 钻石技术有限公司 | System and method for manufacturing a predetermined structure from a diamond mass |
| CN111850507A (en) * | 2020-07-29 | 2020-10-30 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | Method and device for synchronously and compositely manufacturing diamond micro-grating based on micro-additive and micro-additive materials |
-
2021
- 2021-01-06 CN CN202110014240.7A patent/CN112828449A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4467172A (en) * | 1983-01-03 | 1984-08-21 | Jerry Ehrenwald | Method and apparatus for laser engraving diamonds with permanent identification markings |
| CN101576711A (en) * | 2008-12-31 | 2009-11-11 | 南开大学 | Device and method for preparing optical waveguide in transparent solid material by femtosecond laser |
| CN111093885A (en) * | 2017-08-22 | 2020-05-01 | 钻石技术有限公司 | System and method for manufacturing a predetermined structure from a diamond mass |
| CN109551335A (en) * | 2018-11-26 | 2019-04-02 | 南京航空航天大学 | A kind of technique of laser assisted accurate grinding transparent material |
| CN110323132A (en) * | 2019-07-02 | 2019-10-11 | 北京科技大学 | A method of reducing hydrogen terminal diamond ohmic contact resistance |
| CN111850507A (en) * | 2020-07-29 | 2020-10-30 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | Method and device for synchronously and compositely manufacturing diamond micro-grating based on micro-additive and micro-additive materials |
Non-Patent Citations (1)
| Title |
|---|
| 徐世珍等: "金刚石表面飞秒激光直写微米石墨线", 《实验室研究与探索》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114083139A (en) * | 2021-12-31 | 2022-02-25 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN114083139B (en) * | 2021-12-31 | 2023-05-05 | 华侨大学 | Processing device and processing method for laser-induced active ion etching diamond |
| CN115229647A (en) * | 2022-07-20 | 2022-10-25 | 华侨大学 | Device and method for femtosecond laser-assisted diamond polishing |
| CN115229647B (en) * | 2022-07-20 | 2023-08-29 | 华侨大学 | Device for polishing diamond with assistance of femtosecond laser and polishing method thereof |
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Application publication date: 20210525 |