CN112795323A - 一种抗静电半导体芯片切割保护膜 - Google Patents
一种抗静电半导体芯片切割保护膜 Download PDFInfo
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Abstract
本发明公开了芯片切割保护膜技术领域,具体领域为一种抗静电半导体芯片切割保护膜,包括抗静电离型涂层、PVC蓝膜,蓝膜保护底涂和抗静电亚克力胶层,具有柔韧性好,耐高温,易于晶圆扩晶、晶圆切割,在扩晶和切割中能消除摩擦产生的静电,其中蓝膜保护底涂的设置,能够一定程度上防止PVC蓝膜中增塑剂析出渗入胶层,提高PVC蓝膜耐高温和耐溶剂性,且使PVC蓝膜不易收缩,抗静电亚克力胶层剥离强度稳定且耐高温180℃,抗静电。使用PVC蓝膜能醒目、有效识别该保护膜,方便使用。本发明保护膜,总厚度为80±2um,剥离强度为100±20gf/inch,不残胶,抗静电阻值106~109Ω,离型力20gf/inch。
Description
技术领域
本发明涉及芯片切割保护膜技术领域,具体领域为一种抗静电半导体芯片切割保护膜。
背景技术
随着芯片产业的发展,在芯片制造过程中有晶圆扩晶、切割等工序,在此工序中需要一种醒目有效识别,且柔韧性好,无硅转移,能保护晶圆不受物理损伤的保护膜。市面上多数采用PVC等基材配合胶黏剂制作成保护膜。
PVC主要成分为聚氯乙烯,随着助剂用量不同,分为软、硬聚氯乙烯,软制品柔而韧、手感粘,硬制品的硬度高于低密度聚乙烯、而低于聚丙烯。柔软的PVC膜的缺点是容易发生增塑剂的缓慢释放,且不耐溶剂不耐高温,现有采用PVC等基材配合胶黏剂制作成保护膜遇乙酯等溶剂会收缩打卷,遇热会有收缩现象,不利于涂布流平性,为此提出一种抗静电半导体芯片切割保护膜。
发明内容
本发明的目的在于提供一种抗静电半导体芯片切割保护膜,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种抗静电半导体芯片切割保护膜,包括抗静电离型涂层、PVC蓝膜,蓝膜保护底涂和抗静电亚克力胶层。
优选的,抗静电亚克力胶层包括以下重量份的原料:丙烯酸树脂40~60份、环氧型固化剂0.5~3份、异氰酸酯固化剂1~5份、抗静电剂0.4~2份和溶剂30~50份。
优选的,蓝膜保护底涂包括以下重量份的原料:水性聚氨酯树脂30~50份、助溶剂4~10份、固化剂1~3份、流平剂3~7份和溶剂10~30份。
优选的,抗静电离型涂层包括以下重量份的原料:主剂10~60份、铂金催化剂0.02~2份、抗静电剂0.4~2份和稀释剂100~200份。
优选的,抗静电剂为高分子导电聚合物、乙氧基化脂肪族烷基胺类、磺酸锂盐类、金属离子中的一种或多种。
优选的,溶剂为乙酯。
优选的,助溶剂为异丙醇,固化剂为氨基树脂或异氰酸酯,流平剂为有机硅烷,溶剂为去离子水。
优选的,主剂为甲基硅油,稀释剂为乙酯或甲苯。
本发明的有益效果是:一种抗静电半导体芯片切割保护膜,具有柔韧性好,耐高温,易于晶圆扩晶、晶圆切割,在扩晶和切割中能消除摩擦产生的静电,其中蓝膜保护底涂的设置,能够一定程度上防止PVC蓝膜中增塑剂析出渗入胶层,提高PVC蓝膜耐高温和耐溶剂性,且使PVC蓝膜不易收缩,抗静电亚克力胶层剥离强度稳定且耐高温180℃,抗静电。使用PVC蓝膜能醒目、有效识别该保护膜,方便使用。本发明保护膜,总厚度为80±2um,剥离强度为100±20gf/inch,不残胶,抗静电阻值106~109Ω,离型力20gf/inch。
附图说明
图1为本发明抗静电半导体芯片切割保护膜主体结构示意图。
具体实施方式
下面将结合本发明实施例,对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1:
(1)抗静电离型剂配制:
分别称量主剂甲基硅油10份、铂金催化剂0.02份、抗静电剂0.4份,稀释剂100份;将铂金催化剂放入主剂甲基硅油中,加入适量稀释剂搅拌均匀;加入抗静电剂和剩余的稀释剂搅拌均匀;抗静电离型剂配制完毕后准备涂布至PVC蓝膜亮面。
(2)蓝膜保护底涂配制:
步骤1:称量水性聚氨酯树脂30份,助溶剂4份,溶剂10份;
步骤:2:将聚氨酯树脂和助溶剂混合在一起,加入适量的溶剂,搅拌均匀;
步骤3:称量固化剂1份,加入适量溶剂,混合搅拌均匀;
步骤4:将步骤3的溶液加入到步骤2的浊液中,混合搅拌均匀;
步骤5:称量流平剂3份,加入剩余的溶剂,混合搅拌均匀;
步骤6:将步骤5的溶液加入步骤4的溶液中,混合搅拌均匀;
蓝膜保护底涂配制完毕后准备涂布至PVC蓝膜哑面。
(3)抗静电亚克力胶水配制:
步骤1:称量丙烯酸树脂40份,溶剂30份,环氧型固化剂0.5份;
步骤2:将环氧性固化剂中加入适量溶剂,混合搅拌均匀;
步骤3:将步骤2所得溶液加入值丙烯酸树脂中,混合搅拌均匀;
步骤4:称量异氰酸酯固化剂1份,加入适量的溶剂,混合搅拌均匀;
步骤5:将步骤4的溶液加入步骤3中的胶液中,混合搅拌均匀;
步骤6:称量抗静电剂0.4份,加入剩余的溶剂,混合搅拌均匀;
步骤7:将步骤6的溶液加入到步骤5的胶液中,混合搅拌均匀;
抗静电亚克力胶水配制完毕后准备涂布至蓝膜保护底涂上。
(4)涂布工艺如下:
在PVC蓝膜亮面涂布抗静电离型剂,经过120℃烘箱20s烘干;
经过烘干后PVC蓝膜不收卷,经过另一个微凹涂布头将蓝膜保护底涂涂在PVC蓝膜哑面;
哑面涂布蓝膜保护底涂后,经过100℃烘箱3min烘干;
蓝膜保护底涂烘干溶剂挥发后,进入下一个涂布头,在烘干的蓝膜保护底涂上涂布抗静电亚克力胶;
涂布抗静电亚克力胶后,经过100℃烘箱5min,使溶剂挥发烘干胶层;
胶层溶剂烘干后,在机尾收卷PVC蓝膜;
PVC蓝膜收卷后放入熟化室温熟化,常温状态熟化一周,55℃环境下熟化48h。
本实施例中:
抗静电亚克力胶粘度为:4000CPS,涂胶厚度10±2um,其剥离强度100±20gf/inch,耐高温180℃,抗静电阻值106~109Ω;
蓝膜保护底涂厚度1~2um,防止或延缓PVC蓝膜中增塑剂析出渗入胶层,提高PVC蓝膜耐高温和耐溶剂性,增强胶水的附着力;
抗静电离型涂层,厚度0.1~1um,抗静电阻值106~109Ω,离型力20gf/inch;
所制成的抗静电半导体芯片切割保护膜,达到的性能要求总厚度80±2um,剥离强度100±20gf/inch,抗静电阻值106~109Ω,离型力离型力20gf/inch,具有柔韧性好,耐高温180℃,易于晶圆扩晶、晶圆切割等特点。
实施例2:
(1)抗静电离型剂配制:
分别称量主剂甲基硅油40份、铂金催化剂1份、抗静电剂1份,稀释剂150份;将铂金催化剂放入主剂甲基硅油中,加入适量稀释剂搅拌均匀;加入抗静电剂和剩余的稀释剂搅拌均匀;抗静电离型剂配制完毕后准备涂布至PVC蓝膜亮面。
(2)蓝膜保护底涂配制:
步骤1:称量水性聚氨酯树脂40份,助溶剂7份,溶剂20份;
步骤:2:将聚氨酯树脂和助溶剂混合在一起,加入适量的溶剂,搅拌均匀;
步骤3:称量固化剂2份,加入适量溶剂,混合搅拌均匀;
步骤4:将步骤3的溶液加入到步骤2的浊液中,混合搅拌均匀;
步骤5:称量流平剂5份,加入剩余的溶剂,混合搅拌均匀;
步骤6:将步骤5的溶液加入步骤4的溶液中,混合搅拌均匀;
蓝膜保护底涂配制完毕后准备涂布至PVC蓝膜哑面。
(3)抗静电亚克力胶水配制:
步骤1:称量丙烯酸树脂50份,溶剂40份,环氧型固化剂1.5份;
步骤2:将环氧性固化剂中加入适量溶剂,混合搅拌均匀;
步骤3:将步骤2所得溶液加入值丙烯酸树脂中,混合搅拌均匀;
步骤4:称量异氰酸酯固化剂3份,加入适量的溶剂,混合搅拌均匀;
步骤5:将步骤4的溶液加入步骤3中的胶液中,混合搅拌均匀;
步骤6:称量抗静电剂1份,加入剩余的溶剂,混合搅拌均匀;
步骤7:将步骤6的溶液加入到步骤5的胶液中,混合搅拌均匀;
抗静电亚克力胶水配制完毕后准备涂布至蓝膜保护底涂上。
(4)涂布工艺如下:
在PVC蓝膜亮面涂布抗静电离型剂,经过130℃烘箱30s烘干;
经过烘干后PVC蓝膜不收卷,经过另一个微凹涂布头将蓝膜保护底涂涂在PVC蓝膜哑面;
哑面涂布蓝膜保护底涂后,经过100℃烘箱3min烘干;
蓝膜保护底涂烘干溶剂挥发后,进入下一个涂布头,在烘干的蓝膜保护底涂上涂布抗静电亚克力胶;
涂布抗静电亚克力胶后,经过100℃烘箱5min,使溶剂挥发烘干胶层;
胶层溶剂烘干后,在机尾收卷PVC蓝膜;
PVC蓝膜收卷后放入熟化室温熟化,常温状态熟化一周,55℃环境下熟化48h。
本实施例中:
抗静电亚克力胶粘度为:5000CPS,涂胶厚度10±2um,其剥离强度100±20gf/inch,耐高温180℃,抗静电阻值106~109Ω;
蓝膜保护底涂厚度1~2um,防止或延缓PVC蓝膜中增塑剂析出渗入胶层,提高PVC蓝膜耐高温和耐溶剂性,增强胶水的附着力;
抗静电离型涂层,厚度0.1~1um,抗静电阻值106~109Ω,离型力20gf/inch;
所制成的抗静电半导体芯片切割保护膜,达到的性能要求总厚度80±2um,剥离强度100±20gf/inch,抗静电阻值106~109Ω,离型力离型力20gf/inch,具有柔韧性好,耐高温180℃,易于晶圆扩晶、晶圆切割等特点。
实施例3:
(1)抗静电离型剂配制:
分别称量主剂甲基硅油60份、铂金催化剂2份、抗静电剂2份,稀释剂200份;将铂金催化剂放入主剂甲基硅油中,加入适量稀释剂搅拌均匀;加入抗静电剂和剩余的稀释剂搅拌均匀;抗静电离型剂配制完毕后准备涂布至PVC蓝膜亮面。
(2)蓝膜保护底涂配制:
步骤1:称量水性聚氨酯树脂50份,助溶剂10份,溶剂30份;
步骤:2:将聚氨酯树脂和助溶剂混合在一起,加入适量的溶剂,搅拌均匀;
步骤3:称量固化剂3份,加入适量溶剂,混合搅拌均匀;
步骤4:将步骤3的溶液加入到步骤2的浊液中,混合搅拌均匀;
步骤5:称量流平剂7份,加入剩余的溶剂,混合搅拌均匀;
步骤6:将步骤5的溶液加入步骤4的溶液中,混合搅拌均匀;
蓝膜保护底涂配制完毕后准备涂布至PVC蓝膜哑面。
(3)抗静电亚克力胶水配制:
步骤1:称量丙烯酸树脂60份,溶剂50份,环氧型固化剂3份;
步骤2:将环氧性固化剂中加入适量溶剂,混合搅拌均匀;
步骤3:将步骤2所得溶液加入值丙烯酸树脂中,混合搅拌均匀;
步骤4:称量异氰酸酯固化剂5份,加入适量的溶剂,混合搅拌均匀;
步骤5:将步骤4的溶液加入步骤3中的胶液中,混合搅拌均匀;
步骤6:称量抗静电剂2份,加入剩余的溶剂,混合搅拌均匀;
步骤7:将步骤6的溶液加入到步骤5的胶液中,混合搅拌均匀;
抗静电亚克力胶水配制完毕后准备涂布至蓝膜保护底涂上。
(4)涂布工艺如下:
在PVC蓝膜亮面涂布抗静电离型剂,经过140℃烘箱40s烘干;
经过烘干后PVC蓝膜不收卷,经过另一个微凹涂布头将蓝膜保护底涂涂在PVC蓝膜哑面;
哑面涂布蓝膜保护底涂后,经过100℃烘箱3min烘干;
蓝膜保护底涂烘干溶剂挥发后,进入下一个涂布头,在烘干的蓝膜保护底涂上涂布抗静电亚克力胶;
涂布抗静电亚克力胶后,经过100℃烘箱5min,使溶剂挥发烘干胶层;
胶层溶剂烘干后,在机尾收卷PVC蓝膜;
PVC蓝膜收卷后放入熟化室温熟化,常温状态熟化一周,55℃环境下熟化48h。
本实施例中:
抗静电亚克力胶粘度为:6000CPS,涂胶厚度10±2um,其剥离强度100±20gf/inch,耐高温180℃,抗静电阻值106~109Ω;
蓝膜保护底涂厚度1~2um,防止或延缓PVC蓝膜中增塑剂析出渗入胶层,提高PVC蓝膜耐高温和耐溶剂性,增强胶水的附着力;
抗静电离型涂层,厚度0.1~1um,抗静电阻值106~109Ω,离型力20gf/inch;
所制成的抗静电半导体芯片切割保护膜,达到的性能要求总厚度80±2um,剥离强度100±20gf/inch,抗静电阻值106~109Ω,离型力离型力20gf/inch,具有柔韧性好,耐高温180℃,易于晶圆扩晶、晶圆切割等特点。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (8)
1.一种抗静电半导体芯片切割保护膜,其特征在于:包括抗静电离型涂层、PVC蓝膜,蓝膜保护底涂和抗静电亚克力胶层。
2.根据权利要求1所述的一种抗静电半导体芯片切割保护膜,其特征在于:抗静电亚克力胶层包括以下重量份的原料:丙烯酸树脂40~60份、环氧型固化剂0.5~3份、异氰酸酯固化剂1~5份、抗静电剂0.4~2份和溶剂30~50份。
3.根据权利要求1所述的一种抗静电半导体芯片切割保护膜,其特征在于:蓝膜保护底涂包括以下重量份的原料:水性聚氨酯树脂30~50份、助溶剂4~10份、固化剂1~3份、流平剂3~7份和溶剂10~30份。
4.根据权利要求1所述的一种抗静电半导体芯片切割保护膜,其特征在于:抗静电离型涂层包括以下重量份的原料:主剂10~60份、铂金催化剂0.02~2份、抗静电剂0.4~2份和稀释剂100~200份。
5.根据权利要求2或4所述的一种抗静电半导体芯片切割保护膜,其特征在于:抗静电剂为高分子导电聚合物、乙氧基化脂肪族烷基胺类、磺酸锂盐类、金属离子中的一种或多种。
6.根据权利要求2所述的一种抗静电半导体芯片切割保护膜,其特征在于:溶剂为乙酯。
7.根据权利要求3所述的一种抗静电半导体芯片切割保护膜,其特征在于:助溶剂为异丙醇,固化剂为氨基树脂或异氰酸酯,流平剂为有机硅烷,溶剂为去离子水。
8.根据权利要求4所述的一种抗静电半导体芯片切割保护膜,其特征在于:主剂为甲基硅油,稀释剂为乙酯或甲苯。
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