CN112750893A - 低导通压降的载流子存储型fs-igbt及制作方法 - Google Patents
低导通压降的载流子存储型fs-igbt及制作方法 Download PDFInfo
- Publication number
- CN112750893A CN112750893A CN202110019615.9A CN202110019615A CN112750893A CN 112750893 A CN112750893 A CN 112750893A CN 202110019615 A CN202110019615 A CN 202110019615A CN 112750893 A CN112750893 A CN 112750893A
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- front surface
- emitter
- carrier storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003860 storage Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 210000000746 body region Anatomy 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110019615.9A CN112750893A (zh) | 2021-01-07 | 2021-01-07 | 低导通压降的载流子存储型fs-igbt及制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110019615.9A CN112750893A (zh) | 2021-01-07 | 2021-01-07 | 低导通压降的载流子存储型fs-igbt及制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112750893A true CN112750893A (zh) | 2021-05-04 |
Family
ID=75650212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110019615.9A Pending CN112750893A (zh) | 2021-01-07 | 2021-01-07 | 低导通压降的载流子存储型fs-igbt及制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112750893A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016014224A1 (en) * | 2014-07-25 | 2016-01-28 | United Silicon Carbide, Inc. | Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same |
CN108321196A (zh) * | 2018-02-05 | 2018-07-24 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
CN109192771A (zh) * | 2018-08-29 | 2019-01-11 | 电子科技大学 | 一种电荷存储型绝缘栅双极型晶体管及其制备方法 |
CN111312814A (zh) * | 2020-02-26 | 2020-06-19 | 无锡新洁能股份有限公司 | 屏蔽型绝缘栅双极型晶体管结构 |
-
2021
- 2021-01-07 CN CN202110019615.9A patent/CN112750893A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016014224A1 (en) * | 2014-07-25 | 2016-01-28 | United Silicon Carbide, Inc. | Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same |
CN108321196A (zh) * | 2018-02-05 | 2018-07-24 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
CN109192771A (zh) * | 2018-08-29 | 2019-01-11 | 电子科技大学 | 一种电荷存储型绝缘栅双极型晶体管及其制备方法 |
CN111312814A (zh) * | 2020-02-26 | 2020-06-19 | 无锡新洁能股份有限公司 | 屏蔽型绝缘栅双极型晶体管结构 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11081575B2 (en) | Insulated gate bipolar transistor device and method for manufacturing the same | |
CN110504310B (zh) | 一种具有自偏置pmos的ret igbt及其制作方法 | |
CN109065621B (zh) | 一种绝缘栅双极晶体管及其制备方法 | |
CN110600537B (zh) | 一种具有pmos电流嵌位的分离栅cstbt及其制作方法 | |
CN109166917B (zh) | 一种平面型绝缘栅双极晶体管及其制备方法 | |
US20230343827A1 (en) | Power semiconductor device and preparation method thereof | |
CN105679816A (zh) | 一种沟槽栅电荷存储型igbt及其制造方法 | |
WO2023045386A1 (zh) | Igbt器件及其制作方法 | |
CN112271214A (zh) | 带有屏蔽栅结构的igbt器件及制造方法 | |
CN113838914A (zh) | 具有分离栅结构的ret igbt器件结构及制作方法 | |
CN111463270A (zh) | 一种igbt结构及其制备方法 | |
CN113066865B (zh) | 降低开关损耗的半导体器件及其制作方法 | |
US11967631B1 (en) | Power semiconductor device and manufacturing method thereof | |
CN108155230B (zh) | 一种横向rc-igbt器件及其制备方法 | |
CN219419037U (zh) | 一种沟槽型碳化硅mosfet器件 | |
CN110473905B (zh) | 一种具有自偏置pmos的分离栅tigbt及其制作方法 | |
CN116314302A (zh) | 一种沟槽型碳化硅mosfet器件的制造方法 | |
CN114975612A (zh) | 具有低电磁干扰噪声的SiC沟槽栅IGBT器件及制备方法 | |
CN112750893A (zh) | 低导通压降的载流子存储型fs-igbt及制作方法 | |
CN111211167B (zh) | 一种消除负阻效应的rc-igbt器件结构 | |
CN113964197A (zh) | 一种低泄漏电流的igbt器件及其制备方法 | |
CN216871974U (zh) | 一种多通道超结igbt器件 | |
CN113725295B (zh) | 一种逆导型mos栅控晶闸管及其制造方法 | |
CN103219371B (zh) | 一种带有双面扩散残留层的沟槽栅型igbt及其制造方法 | |
CN116314309B (zh) | 逆导型igbt器件的背面栅结构及其加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240613 Address after: 100000 106A, Floor 1, B-1, Zhongguancun Dongsheng Science Park, 66 Xixiaokou Road, Haidian District, Northern Territory, Beijing Applicant after: ZIGUANG TONGXIN MICROELECTRONICS CO.,LTD. Country or region after: China Address before: 214135 Jiangsu Wuxi New District, 200, Linghu Road, China, four floor, D2 International Innovation Park, China sensor network. Applicant before: WUXI UNIGROUP MICROELECTRONICS CO.,LTD. Country or region before: China |
|
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210504 |