CN1127425A - 清除溴化物气蚀刻用真空处理室的方法 - Google Patents
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- 238000004140 cleaning Methods 0.000 title abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
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- 238000009489 vacuum treatment Methods 0.000 claims 1
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- 239000007795 chemical reaction product Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- 125000001246 bromo group Chemical group Br* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003676 SiBr4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 bromine ions Chemical class 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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Abstract
一种清除干蚀刻设备的真空处理室(1)的方法，将含稀有气体的氧化性气体通入该室，并在其中激发等离子体。排出等离子的氧化性气体后，向该真空处理室通入氟化物气体，并在其中激发等离子体。
Description
本发明是关于清除干蚀刻设备的真空处理室的方法，该处理室用于溴化物气蚀刻加工工艺。
一直广泛使用干(等离子体)蚀刻设备制造半导体器件的精细结构。在干蚀刻法中，将其上沉积有多晶硅层的硅基片固定在一真空处理室内，然后通入溴化氢(HBr)气体。再激发等离子体腐蚀该多晶硅层。该等离子浸刻过程中，残余反应产物如溴化硅(SixBry)沉积到真空处理室、电极等的内壁。这些残余反应产物损害了浸刻特性。即，促进了浸蚀付作用。使多晶硅的浸蚀速率波动，以致达不到蚀刻可再现性。此外，如果将空气通入真空处理室，其中的成份水与残余反应产物反应，产生强溴化氢气体。所以，必须清除真空室内的残余反应产物。
现有技术中，尚未提出清除残余反应产物SixBry的方法。这种残余反应产物SixBry是用手工刮除的。这使真空处理室不能连续使用，从而导致效率降低。该手工刮除操作的缺点是操作人员不安全。而且，由于真空室及其周边设备可能生锈，使利用该处理室制造半导体器件的产率降低。
JP-A-SH061-250185公开了一种清除真空处理室内残余反应产物氯化硅(SixCly)的方法。其中将氧化性气体通入真空处理室，并在室内激发等离子体。待等离子氧化性气体耗净后，向室内通入氟化物气体，并激发等离子体。既使将该净化方法用于残余反应产物SixBry，也不可能均匀有效地将SixBry转化成氧化硅。结果，由于SixBry很难于氟化物气体反应，SixBry仍留在该真空处理室内。
JP-A-HEI2-138472公开的一种清除沉积在真空处理室内残余反应物的方法中，利用了SF6，含氧气体和稀有气体混合气的等离子体。但不可能用该法清除残余反应产物SixBry。
本发明的目的是提供一种新方法，用于清除真空处理室内残余反应产物SixBry。
本发明清除干蚀刻设备的真空处理室的方法中，将包括稀有气体的氧化性气体通入真空处理室，并激发等离子体。待该等离子氧化气体排尽后，再向真空处理室通入氟化物气体并激发等离子体。结果，SixBry中的溴基被氧化性等离子气体中的氧取代，由此生成氧化硅(SiO2)。该法中，利用稀有气体稀释该氧化性等离子气体，使氧化性等离子气体均匀分布在真空处理室内。此外，具有线性光谱的稀有气体的等离子体发射的光促进了上述取代反应。这样，在包括稀有气体的氧化性等离子气体中，SixBry完全转变成氧化硅，之后，该氧化硅被氟化物等离子气体消除。
参照附图及下面的说明，将更清楚地理解本发明。
图1是一真空处理室的横截面示意图，在该室内进行清除残余反应产物SixBry的方法的一个实例。
图1中，附图标记1指示一干蚀刻设备的真空处理室。真空处理室1内装有进气口2a和2b及出气口3。出气口3通向真空排气系统4。
半导体基片5安置在基片支架6上，该支架亦作为一个电极，与高频供电源7连接。此时假定在该半导体基片5上已预先利用化学蒸气沉积法(CVD)沉积了一层多晶硅层。
附图标记8指示一接地电极。注意该真空处理室1亦接地。
下面说明多晶硅层的干蚀刻过程。溴化氢(HBr)经气体入口2a进入真空处理室1，接通高频供电源7在里面激发等离子体。结果，溴基与溴离子与多晶硅层反应，使多晶硅层转变成溴化硅，该溴化硅经气体出口3从真空处理室1排出。这样，多晶硅被腐蚀。此时，溴化硅沉积到真空处理室内壁1a、基片支架6、接地电极8等等上面。
下面详细说明清除残余溴化硅的方法。
首先，使含氦(He)的氧气经气体入口2b进入真空处理室1，接通高频供电源7在里面激发等离子体。条件如下：
He与O2的混合比： 3∶7
气流量： 15-300sccm
气体压力： 80-300mTorr
电源7的频率： 13.56MHz
电源7的功率： 100-1000W结果发生下列反应：
注意，如果He与O2的混合比小于约10％，从等离子氦发射的光的强度太弱，以致于不能激发SiBr4的溴基团。另一方面，如He与O2的混合比大于约90％，氧含量太小，以致于不能促使上述反应(1)进行。因此，稀有气体如氦与氧的混合比优选在约10-90％范围内。
接下来，停止输入含有氦的氧化性气体，在真空处理室1中进行排气操作。
使氟化物气体如六氟化硫气体经气体入口2b进入真空处理室1，接通高频供电源7在里面激发等离子体。条件如下：
气体流量： 15-300sccm
气体压力： 80-300mTorr
电源7的频率： 13.56MHz
电源7的功率： 100-1000W结果发生下列反应：
最后，停止通入氟化物气体，在真空处理室1进行排气操作。
根据发明人进行的实验，进行上述清除方法之后，未嗅到溴化氢气味，在真空处理室1的内壁上未见有残余反应产物。清除真空处理室和电极所需时间约30min，而手工刮除残余反应产物(SixBry)需时约6hr。
上述实施方案中，虽然用氦作为稀有气体，但也可用其它稀有气体如氖(Ne)、氩(Ar)等等。此外，可用水(H2O)、过氧化氢(H2O2)或臭氧(O3)代替氧用作氧化性气体。而且，可用四氟化碳(CF4)、三氟化氮(NH3)或其混合气体代替SF6用作氟化物气体。
如前所述，据本发明，可从真空处理室、电极等等上均匀有效地清除残余反应产物(SixBry)。
Claims (5)
1.一种清除真空处理室(1)的方法，在该室内用溴化物气体处理硅基片(5)，该法包括下列步骤：
将含有稀有气体的氧化性气体通入真空处理室，激发氧化气体中的等离子体；
从真空处理室排出氧化性气体；
排出氧化气体后，将氟化物气体通入真空处理室，激发氟化物气体中的等离子体。
2.如权利要求1所述的方法，其中所述氧化性气体是O2气、H2O气、H2O2和O3气体中的一种。
3.如权利要求1所述的方法，其中氧化性气体中稀有气体的混合比约为10-80％。
4.如权利要求1所述的方法，其中所述稀有气体是He气、Ne气、Ar气中的一种。
5.如权利要求1所述的方法，其中所述氟化物气体是NF3气、C2F6气、CF4气和SF6气中的一种。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP235160/94 | 1994-09-29 | ||
| JP6235160A JPH0897189A (ja) | 1994-09-29 | 1994-09-29 | 真空処理装置のクリーニング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1127425A true CN1127425A (zh) | 1996-07-24 |
Family
ID=16981946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95118641A Pending CN1127425A (zh) | 1994-09-29 | 1995-09-29 | 清除溴化物气蚀刻用真空处理室的方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0897189A (zh) |
| KR (1) | KR960012351A (zh) |
| CN (1) | CN1127425A (zh) |
| GB (1) | GB2293795A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7678677B2 (en) | 2006-07-21 | 2010-03-16 | Dongbu Hitek Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN104882389A (zh) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | 一种半导体器件量测方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100466969B1 (ko) * | 1997-05-23 | 2005-05-10 | 삼성전자주식회사 | 반도체플라스마식각챔버의공정부산물제거방법 |
| US6081334A (en) | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
| EP1124255A3 (en) * | 1999-04-05 | 2001-10-17 | Applied Materials, Inc. | Etching process in the fabrication of electronic devices |
| US6352081B1 (en) * | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| JP4730572B2 (ja) * | 2000-08-21 | 2011-07-20 | 株式会社アルバック | プラズマ成膜装置及びそのクリーニング方法 |
| US6905624B2 (en) | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
| JP2006270030A (ja) * | 2005-02-28 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理方法、および後処理方法 |
| JP5442403B2 (ja) | 2009-11-18 | 2014-03-12 | 東京エレクトロン株式会社 | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 |
| JP2015060934A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61250185A (ja) * | 1985-04-25 | 1986-11-07 | Anelva Corp | 真空処理装置のクリ−ニング方法 |
-
1994
- 1994-09-29 JP JP6235160A patent/JPH0897189A/ja active Pending
-
1995
- 1995-09-28 KR KR1019950032320A patent/KR960012351A/ko not_active Application Discontinuation
- 1995-09-29 CN CN95118641A patent/CN1127425A/zh active Pending
- 1995-09-29 GB GB9519924A patent/GB2293795A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7678677B2 (en) | 2006-07-21 | 2010-03-16 | Dongbu Hitek Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN104882389A (zh) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | 一种半导体器件量测方法 |
| CN104882389B (zh) * | 2014-02-28 | 2017-12-26 | 无锡华润上华科技有限公司 | 一种半导体器件量测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2293795A (en) | 1996-04-10 |
| GB9519924D0 (en) | 1995-11-29 |
| JPH0897189A (ja) | 1996-04-12 |
| KR960012351A (ko) | 1996-04-20 |
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