KR960012351A - 브롬화 가스를 사용하여 진공 처리실을 세정하는 방법 - Google Patents

브롬화 가스를 사용하여 진공 처리실을 세정하는 방법 Download PDF

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Publication number
KR960012351A
KR960012351A KR1019950032320A KR19950032320A KR960012351A KR 960012351 A KR960012351 A KR 960012351A KR 1019950032320 A KR1019950032320 A KR 1019950032320A KR 19950032320 A KR19950032320 A KR 19950032320A KR 960012351 A KR960012351 A KR 960012351A
Authority
KR
South Korea
Prior art keywords
vacuum chamber
clean vacuum
brominated gas
brominated
gas
Prior art date
Application number
KR1019950032320A
Other languages
English (en)
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012351A publication Critical patent/KR960012351A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1019950032320A 1994-09-29 1995-09-28 브롬화 가스를 사용하여 진공 처리실을 세정하는 방법 KR960012351A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6235160A JPH0897189A (ja) 1994-09-29 1994-09-29 真空処理装置のクリーニング方法

Publications (1)

Publication Number Publication Date
KR960012351A true KR960012351A (ko) 1996-04-20

Family

ID=16981946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032320A KR960012351A (ko) 1994-09-29 1995-09-28 브롬화 가스를 사용하여 진공 처리실을 세정하는 방법

Country Status (4)

Country Link
JP (1) JPH0897189A (zh)
KR (1) KR960012351A (zh)
CN (1) CN1127425A (zh)
GB (1) GB2293795A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100466969B1 (ko) * 1997-05-23 2005-05-10 삼성전자주식회사 반도체플라스마식각챔버의공정부산물제거방법
US6081334A (en) 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
EP1124255A3 (en) * 1999-04-05 2001-10-17 Applied Materials, Inc. Etching process in the fabrication of electronic devices
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
JP4730572B2 (ja) * 2000-08-21 2011-07-20 株式会社アルバック プラズマ成膜装置及びそのクリーニング方法
US6905624B2 (en) 2003-07-07 2005-06-14 Applied Materials, Inc. Interferometric endpoint detection in a substrate etching process
JP2006270030A (ja) * 2005-02-28 2006-10-05 Tokyo Electron Ltd プラズマ処理方法、および後処理方法
KR100772833B1 (ko) 2006-07-21 2007-11-01 동부일렉트로닉스 주식회사 반도체 소자 및 반도체 소자의 제조 방법
JP5442403B2 (ja) 2009-11-18 2014-03-12 東京エレクトロン株式会社 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
CN104882389B (zh) * 2014-02-28 2017-12-26 无锡华润上华科技有限公司 一种半导体器件量测方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250185A (ja) * 1985-04-25 1986-11-07 Anelva Corp 真空処理装置のクリ−ニング方法

Also Published As

Publication number Publication date
CN1127425A (zh) 1996-07-24
GB2293795A (en) 1996-04-10
GB9519924D0 (en) 1995-11-29
JPH0897189A (ja) 1996-04-12

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application