GB2293795A - Cleaning vacuum processing chamber - Google Patents
Cleaning vacuum processing chamber Download PDFInfo
- Publication number
- GB2293795A GB2293795A GB9519924A GB9519924A GB2293795A GB 2293795 A GB2293795 A GB 2293795A GB 9519924 A GB9519924 A GB 9519924A GB 9519924 A GB9519924 A GB 9519924A GB 2293795 A GB2293795 A GB 2293795A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gas
- processing chamber
- vacuum processing
- plasma
- oxidative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000001590 oxidative effect Effects 0.000 claims abstract description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 43
- 239000007795 chemical reaction product Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 6
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 5
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910003676 SiBr4 Inorganic materials 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- -1 bromine ions Chemical class 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910004223 O2SiO2 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- ZYCMDWDFIQDPLP-UHFFFAOYSA-N hbr bromine Chemical compound Br.Br ZYCMDWDFIQDPLP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6235160A JPH0897189A (ja) | 1994-09-29 | 1994-09-29 | 真空処理装置のクリーニング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9519924D0 GB9519924D0 (en) | 1995-11-29 |
| GB2293795A true GB2293795A (en) | 1996-04-10 |
Family
ID=16981946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9519924A Withdrawn GB2293795A (en) | 1994-09-29 | 1995-09-29 | Cleaning vacuum processing chamber |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0897189A (zh) |
| KR (1) | KR960012351A (zh) |
| CN (1) | CN1127425A (zh) |
| GB (1) | GB2293795A (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001004936A1 (en) * | 1999-07-09 | 2001-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| EP1124255A2 (en) * | 1999-04-05 | 2001-08-16 | Applied Materials, Inc. | Etching process in the fabrication of electronic devices |
| US6406924B1 (en) | 1998-04-17 | 2002-06-18 | Applied Materials, Inc. | Endpoint detection in the fabrication of electronic devices |
| SG98453A1 (en) * | 2000-08-21 | 2003-09-19 | Ulvac Inc | Plasma film-forming apparatus and cleaning method for the same |
| US6905624B2 (en) | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
| US7678677B2 (en) | 2006-07-21 | 2010-03-16 | Dongbu Hitek Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100466969B1 (ko) * | 1997-05-23 | 2005-05-10 | 삼성전자주식회사 | 반도체플라스마식각챔버의공정부산물제거방법 |
| JP2006270030A (ja) * | 2005-02-28 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理方法、および後処理方法 |
| JP5442403B2 (ja) | 2009-11-18 | 2014-03-12 | 東京エレクトロン株式会社 | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 |
| JP2015060934A (ja) * | 2013-09-18 | 2015-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| CN104882389B (zh) * | 2014-02-28 | 2017-12-26 | 无锡华润上华科技有限公司 | 一种半导体器件量测方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61250185A (ja) * | 1985-04-25 | 1986-11-07 | Anelva Corp | 真空処理装置のクリ−ニング方法 |
-
1994
- 1994-09-29 JP JP6235160A patent/JPH0897189A/ja active Pending
-
1995
- 1995-09-28 KR KR1019950032320A patent/KR960012351A/ko not_active Application Discontinuation
- 1995-09-29 CN CN95118641A patent/CN1127425A/zh active Pending
- 1995-09-29 GB GB9519924A patent/GB2293795A/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61250185A (ja) * | 1985-04-25 | 1986-11-07 | Anelva Corp | 真空処理装置のクリ−ニング方法 |
Non-Patent Citations (1)
| Title |
|---|
| WPI Abstract Accession No.86-335260/51 & JP61250185A (Nichiden Anelva)-see abstract * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406924B1 (en) | 1998-04-17 | 2002-06-18 | Applied Materials, Inc. | Endpoint detection in the fabrication of electronic devices |
| EP1124255A2 (en) * | 1999-04-05 | 2001-08-16 | Applied Materials, Inc. | Etching process in the fabrication of electronic devices |
| EP1124255A3 (en) * | 1999-04-05 | 2001-10-17 | Applied Materials, Inc. | Etching process in the fabrication of electronic devices |
| WO2001004936A1 (en) * | 1999-07-09 | 2001-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| US6352081B1 (en) | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| SG98453A1 (en) * | 2000-08-21 | 2003-09-19 | Ulvac Inc | Plasma film-forming apparatus and cleaning method for the same |
| US6905624B2 (en) | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
| US7678677B2 (en) | 2006-07-21 | 2010-03-16 | Dongbu Hitek Co., Ltd. | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1127425A (zh) | 1996-07-24 |
| GB9519924D0 (en) | 1995-11-29 |
| JPH0897189A (ja) | 1996-04-12 |
| KR960012351A (ko) | 1996-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |