CN112658982A - 抛光液供给装置 - Google Patents
抛光液供给装置 Download PDFInfo
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- CN112658982A CN112658982A CN202011490914.2A CN202011490914A CN112658982A CN 112658982 A CN112658982 A CN 112658982A CN 202011490914 A CN202011490914 A CN 202011490914A CN 112658982 A CN112658982 A CN 112658982A
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- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 239000000243 solution Substances 0.000 claims abstract description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 229920000620 organic polymer Polymers 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 239000004800 polyvinyl chloride Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 4
- 239000012994 photoredox catalyst Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052710 silicon Inorganic materials 0.000 abstract description 23
- 239000010703 silicon Substances 0.000 abstract description 23
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 24
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000013618 particulate matter Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011490914.2A CN112658982B (zh) | 2020-12-16 | 2020-12-16 | 抛光液供给装置 |
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CN202011490914.2A CN112658982B (zh) | 2020-12-16 | 2020-12-16 | 抛光液供给装置 |
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CN112658982A true CN112658982A (zh) | 2021-04-16 |
CN112658982B CN112658982B (zh) | 2022-12-09 |
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CN202011490914.2A Active CN112658982B (zh) | 2020-12-16 | 2020-12-16 | 抛光液供给装置 |
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11253894A (ja) * | 1998-03-16 | 1999-09-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005052952A (ja) * | 2003-08-07 | 2005-03-03 | Matsushita Electric Ind Co Ltd | スラリー供給装置およびスラリー供給方法 |
JP3789296B2 (ja) * | 2000-11-17 | 2006-06-21 | リオン株式会社 | 研磨液の製造装置 |
CN101081965A (zh) * | 2006-06-02 | 2007-12-05 | 天津晶岭电子材料科技有限公司 | 一种用于锗晶片的抛光液及其制备方法 |
CN201077028Y (zh) * | 2007-06-29 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 一种改进型化学机械研磨液容器 |
JP2009050999A (ja) * | 2007-07-30 | 2009-03-12 | Takeshi Kato | 平面研磨装置 |
CN102061131A (zh) * | 2010-11-22 | 2011-05-18 | 上海新安纳电子科技有限公司 | 一种降低硅片表面微划伤的抛光液及其制备和使用方法 |
TWM452036U (zh) * | 2012-06-08 | 2013-05-01 | Chen Yuan Co Ltd | 晶圓研磨液加速混攪結構 |
CN101451045B (zh) * | 2007-12-07 | 2013-06-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液的制备工艺 |
CN203092352U (zh) * | 2013-02-07 | 2013-07-31 | 中芯国际集成电路制造(北京)有限公司 | 一种带有自动清洗装置的化学机械抛光研磨液供应系统 |
CN206216510U (zh) * | 2016-11-23 | 2017-06-06 | 福州恒光光电有限公司 | 一种光学晶体研磨抛光用抛光液处理装置 |
CN108872470A (zh) * | 2018-07-23 | 2018-11-23 | 超威电源有限公司 | 一种检测蓄电池用气相二氧化硅氯含量的检测装置及方法 |
CN209635419U (zh) * | 2019-01-04 | 2019-11-15 | 天津龙华诚信粉体技术有限公司 | 一种用于二氧化硅的输送设备 |
CN111623871A (zh) * | 2020-07-13 | 2020-09-04 | 之江实验室 | 利用纳米微粒测量激光光场相对强度分布的方法和装置 |
-
2020
- 2020-12-16 CN CN202011490914.2A patent/CN112658982B/zh active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11253894A (ja) * | 1998-03-16 | 1999-09-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP3789296B2 (ja) * | 2000-11-17 | 2006-06-21 | リオン株式会社 | 研磨液の製造装置 |
JP2005052952A (ja) * | 2003-08-07 | 2005-03-03 | Matsushita Electric Ind Co Ltd | スラリー供給装置およびスラリー供給方法 |
CN101081965A (zh) * | 2006-06-02 | 2007-12-05 | 天津晶岭电子材料科技有限公司 | 一种用于锗晶片的抛光液及其制备方法 |
CN201077028Y (zh) * | 2007-06-29 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | 一种改进型化学机械研磨液容器 |
JP2009050999A (ja) * | 2007-07-30 | 2009-03-12 | Takeshi Kato | 平面研磨装置 |
CN101451045B (zh) * | 2007-12-07 | 2013-06-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液的制备工艺 |
CN102061131A (zh) * | 2010-11-22 | 2011-05-18 | 上海新安纳电子科技有限公司 | 一种降低硅片表面微划伤的抛光液及其制备和使用方法 |
TWM452036U (zh) * | 2012-06-08 | 2013-05-01 | Chen Yuan Co Ltd | 晶圓研磨液加速混攪結構 |
CN203092352U (zh) * | 2013-02-07 | 2013-07-31 | 中芯国际集成电路制造(北京)有限公司 | 一种带有自动清洗装置的化学机械抛光研磨液供应系统 |
CN206216510U (zh) * | 2016-11-23 | 2017-06-06 | 福州恒光光电有限公司 | 一种光学晶体研磨抛光用抛光液处理装置 |
CN108872470A (zh) * | 2018-07-23 | 2018-11-23 | 超威电源有限公司 | 一种检测蓄电池用气相二氧化硅氯含量的检测装置及方法 |
CN209635419U (zh) * | 2019-01-04 | 2019-11-15 | 天津龙华诚信粉体技术有限公司 | 一种用于二氧化硅的输送设备 |
CN111623871A (zh) * | 2020-07-13 | 2020-09-04 | 之江实验室 | 利用纳米微粒测量激光光场相对强度分布的方法和装置 |
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CN112658982B (zh) | 2022-12-09 |
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Effective date of registration: 20220628 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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