CN112649571A - Semiconductor marking depth detector based on dispersion conjugate focusing measurement method - Google Patents
Semiconductor marking depth detector based on dispersion conjugate focusing measurement method Download PDFInfo
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- CN112649571A CN112649571A CN202011467310.6A CN202011467310A CN112649571A CN 112649571 A CN112649571 A CN 112649571A CN 202011467310 A CN202011467310 A CN 202011467310A CN 112649571 A CN112649571 A CN 112649571A
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- 239000006185 dispersion Substances 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000691 measurement method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 239000000523 sample Substances 0.000 claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 238000010330 laser marking Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 3
- 230000021615 conjugation Effects 0.000 claims 2
- 238000005259 measurement Methods 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 38
- 238000004891 communication Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000011012 sanitization Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
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Abstract
The invention discloses a semiconductor marking depth detector based on a dispersion conjugate focusing measurement method, which comprises a dispersion conjugate focusing measurement probe and a high-precision sliding table, wherein the dispersion conjugate focusing measurement probe is arranged above the high-precision sliding table, a measured silicon wafer carrier is fixedly arranged on the upper surface of the high-precision sliding table, a plurality of measured silicon wafer positioning pins are fixedly arranged on the upper surface of the measured silicon wafer carrier, a silicon wafer is placed in the measured silicon wafer positioning pins, a silicon wafer marking code is arranged on the silicon wafer, the dispersion conjugate focusing measurement probe and the high-precision sliding table are controlled on a human-computer interface, the precision can reach 1nm by the detection of the dispersion conjugate focusing measurement probe, the precise control of the laser marking code can be realized, the balance between the definition and the minimum influence on the mechanical strength of the silicon wafer on the depth of nicks of the silicon wafer marking code can be controlled, and the situation that the depth marking, both manual and mechanical reading can be difficult to produce and affect product quality.
Description
Technical Field
The invention relates to the technical field of polished wafer production in the semiconductor industry, in particular to a semiconductor marking depth detector based on a dispersion conjugate focusing measurement method.
Background
In the field of semiconductor production, ID marking on silicon chips plays a crucial role in product control and quality tracing, and the role is basically communicated in the modern industrial field. Due to the particularity of the semiconductor industry, the silicon wafer can be marked only by laser marking, namely, by laser lettering. The height of the marked characters is limited by the characteristics of the product, and the smallest occupied area of the silicon chip is generally considered. The depth of marking is also a trade-off between "clear reading" and "minimizing the stress effects on the wafer". Therefore, the control of the marking depth is a very key index, the marking depth is too shallow, and the subsequent manual reading and mechanical reading are difficult to realize, so that the product quality is influenced. The marking is too deep, the stress intensity of the silicon wafer is damaged, the problems of warping and flatness can occur, and meanwhile, if the marking is too deep, tiny dust in the marked tiny pits is difficult to clean in the cleaning process, which is also an important hazard to the quality of the silicon wafer.
Therefore, a semiconductor marking depth detector based on a dispersion conjugate focusing measurement method is provided for solving the problems.
Disclosure of Invention
The invention aims to provide a semiconductor marking depth detector based on a dispersion conjugate focusing measurement method, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the semiconductor marking depth detector based on the dispersion conjugate focusing measurement method comprises a dispersion conjugate focusing measurement probe and a high-precision sliding table, wherein the dispersion conjugate focusing measurement probe is arranged above the high-precision sliding table, a measured silicon wafer carrying table is fixedly arranged on the upper surface of the high-precision sliding table, a plurality of measured silicon wafer positioning pins are fixedly arranged on the upper surface of the measured silicon wafer carrying table, silicon wafers are placed inside the measured silicon wafer positioning pins, and silicon wafer marking codes are arranged on the silicon wafers.
Preferably, the dispersion conjugate focus measuring probe and the high-precision sliding table are controlled by a human-computer interface.
Preferably, the dispersion conjugate focusing measuring probe can realize the detection precision of the laser marking depth of 1 nm.
Preferably, the dispersion conjugate focus measurement probe has three sets, or one dispersion conjugate focus measurement probe is detachably mounted at three positions.
Preferably, the silicon wafer positioning pin to be tested is made of clean tetrafluoroethylene.
Preferably, the high-precision sliding table can move linearly in a single dimension.
Compared with the prior art, the invention has the beneficial effects that: detect through dispersion conjugate focus measuring probe, the precision can reach 1nm, can realize the accurate control to laser marking code, be favorable to controlling the silicon chip to mark the nick degree of depth of code and balancing between definition and the minimum to silicon chip mechanical strength influence, it is too shallow to avoid marking the degree of depth, produce artifical reading or mechanical reading and all can meet the difficulty, influence the product quality, mark too deeply, the stress intensity of silicon chip is destroyed, the warpage may appear, the problem of roughness, it is too deep to mark the degree of depth, the small dust in the small pit hole of mark is difficult to the sanitization problem at abluent in-process, thereby carry out the quantitative measurement to this quality index of laser marking degree of depth, realize closed-loop control's purpose to the output of marking machine. The quality cost is reduced.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a side view of the present invention.
In the figure: 1. a dispersion conjugate focus measurement probe; 2. a silicon wafer carrier to be tested; 3. positioning pins of the silicon wafer to be tested; 4. a high-precision sliding table; 5. marking a mark on a silicon wafer; 6. a silicon wafer; 7. and (4) a human-computer interface.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The semiconductor marking depth embodiment based on the dispersion conjugate focusing measurement method comprises the following steps:
an operator uses the prior art such as a vacuum suction pen to place a silicon wafer on a silicon wafer carrier 2 to be tested, the positioning pin 3 of the silicon wafer to be tested ensures that the silicon wafer 6 is placed in place, the operator operates on a human-computer interface 7 to start detection, the silicon wafer carrier 2 to be tested is driven by a high-precision sliding table to translate below a dispersion conjugate focusing measuring probe 1, the dispersion conjugate focusing measuring probe 1 can realize the depth detection of a silicon wafer marking code 5 on the silicon wafer 6, and a series of depth data is recorded;
the system will carry on the filtering treatment to the depth data detected, later compare the data with calibration data in the system, when the measured value has exceeded the calibration value, send out the warning through man-machine interface 7 and communication.
Referring to fig. 1-2, the present invention provides a technical solution: the semiconductor marking depth detector based on the dispersion conjugate focusing measurement method comprises a dispersion conjugate focusing measurement probe 1 and a high-precision sliding table 4, wherein the dispersion conjugate focusing measurement probe 1 is positioned above the high-precision sliding table 4, so that measurement is convenient, a measured silicon wafer carrier 2 is fixedly arranged on the upper surface of the high-precision sliding table 4 and can drive the measured silicon wafer carrier 2 to slide, a plurality of measured silicon wafer positioning pins 3 are fixedly arranged on the upper surface of the measured silicon wafer carrier 2 and can be used for positioning a silicon wafer 6, a silicon wafer 6 is placed inside the measured silicon wafer positioning pins 3, and a silicon wafer marking code 5 is arranged on the silicon wafer 6;
the dispersion conjugate focusing measuring probe 1 and the high-precision sliding table 4 are controlled by a human-computer interface 7, the data of marking depth detection of the silicon wafer 6 can form local database data through a controller, and the data can be reported to a system through a communication port to be used as a basis for quality control while being displayed by the human-computer interface 7;
the dispersion conjugate focusing measuring probe 1 can realize the detection precision of the laser marking depth of 1nm, can realize the accurate control of the laser marking code, and is favorable for controlling the balance of the nicking depth of the silicon chip marking code between the definition and the minimum influence on the mechanical strength of the silicon chip;
the dispersion conjugate focusing measuring probe 1 has three or one dispersion conjugate focusing measuring probe 1 is detachably arranged at three positions, so that the detection of marking codes at different positions can be realized;
the positioning pin 3 of the silicon wafer to be detected is made of clean tetrafluoroethylene, so that the silicon wafer 6 can be wrapped, the positioning of the silicon wafer on the carrying platform can be realized, and the consistency of the detection position is ensured;
the high-precision sliding table 4 can move linearly in a single dimension, and scanning detection of the silicon wafer marking codes 5 is allowed to be realized on the premise of ensuring detection precision.
The working principle is as follows: the invention discloses a dispersion conjugate focusing measurement method, which is characterized in that after light is split by a spectrum, light waves with different wavelengths pass through lenses with different refraction angles, so that formed focusing points are different, the focusing points form a series of continuous focal points according to different wavelengths of light, the focal points are reflected when meeting a reflecting surface and return to a sensor probe receiver, and the received reflected light is subjected to spectrum analysis, so that the reflecting surface which the light with the wavelength meets can be obtained, and the distance between the reflecting surface and an emitter is calculated. The advantage of using this measurement is that it can be used to detect both the upper and lower interfaces of the transparent object, i.e. the interface between air and the transparent object. Due to the adoption of a mode of utilizing the wavelengths of different spectrums as detection bases, the precision of the highest resolution of 1nm can be realized.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. Semiconductor marking depth detector based on dispersion conjugation focus measuring method, including dispersion conjugation focus measuring probe (1) and high accuracy slip table (4), its characterized in that: the dispersion conjugate focusing measuring probe (1) is arranged above the high-precision sliding table (4), the upper surface of the high-precision sliding table (4) is fixedly provided with a measured silicon wafer carrying table (2), the upper surface of the measured silicon wafer carrying table (2) is fixedly provided with a plurality of measured silicon wafer positioning pins (3), a silicon wafer (6) is placed inside the measured silicon wafer positioning pins (3), and the silicon wafer (6) is provided with a silicon wafer marking code (5).
2. The semiconductor marking depth detector based on the chromatic dispersion conjugate focus measurement method of claim 1, wherein: the dispersion conjugate focusing measuring probe (1) and the high-precision sliding table (4) are controlled by a human-computer interface (7).
3. The semiconductor marking depth detector based on the chromatic dispersion conjugate focus measurement method of claim 1, wherein: the dispersion conjugate focusing measuring probe (1) can realize the detection precision of the laser marking depth of 1 nm.
4. The semiconductor marking depth detector based on the chromatic dispersion conjugate focus measurement method of claim 1, wherein: the dispersion conjugate focus measuring probe (1) has three stations, or one dispersion conjugate focus measuring probe (1) is detachably arranged at three positions.
5. The semiconductor marking depth detector based on the chromatic dispersion conjugate focus measurement method of claim 1, wherein: the silicon wafer positioning pin (3) to be detected is made of clean tetrafluoroethylene.
6. The semiconductor marking depth detector based on the chromatic dispersion conjugate focus measurement method of claim 1, wherein: the high-precision sliding table (4) can move linearly in a single dimension.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011467310.6A CN112649571A (en) | 2020-12-14 | 2020-12-14 | Semiconductor marking depth detector based on dispersion conjugate focusing measurement method |
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| CN202011467310.6A CN112649571A (en) | 2020-12-14 | 2020-12-14 | Semiconductor marking depth detector based on dispersion conjugate focusing measurement method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790707B1 (en) * | 2006-09-21 | 2008-01-02 | 삼성전기주식회사 | Dispersion control confocal laser microscope |
| CN101105391A (en) * | 2007-08-08 | 2008-01-16 | 北京交通大学 | Synthetic wave interference nano surface tri-dimensional on-line measuring system and method |
| CN108817656A (en) * | 2018-06-19 | 2018-11-16 | 南京引创光电科技有限公司 | A kind of laser focusing system for realizing coaxial displacement measurement function |
| CN111351448A (en) * | 2018-12-24 | 2020-06-30 | 深圳中科飞测科技有限公司 | Detection apparatus and detection method |
| CN111426287A (en) * | 2020-04-23 | 2020-07-17 | 华侨大学 | Parallel color confocal flatness measuring system |
| CN214427382U (en) * | 2020-12-14 | 2021-10-19 | 中环领先半导体材料有限公司 | Semiconductor marking depth detector based on dispersion conjugate focusing measurement |
-
2020
- 2020-12-14 CN CN202011467310.6A patent/CN112649571A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790707B1 (en) * | 2006-09-21 | 2008-01-02 | 삼성전기주식회사 | Dispersion control confocal laser microscope |
| CN101105391A (en) * | 2007-08-08 | 2008-01-16 | 北京交通大学 | Synthetic wave interference nano surface tri-dimensional on-line measuring system and method |
| CN108817656A (en) * | 2018-06-19 | 2018-11-16 | 南京引创光电科技有限公司 | A kind of laser focusing system for realizing coaxial displacement measurement function |
| CN111351448A (en) * | 2018-12-24 | 2020-06-30 | 深圳中科飞测科技有限公司 | Detection apparatus and detection method |
| CN111426287A (en) * | 2020-04-23 | 2020-07-17 | 华侨大学 | Parallel color confocal flatness measuring system |
| CN214427382U (en) * | 2020-12-14 | 2021-10-19 | 中环领先半导体材料有限公司 | Semiconductor marking depth detector based on dispersion conjugate focusing measurement |
Non-Patent Citations (1)
| Title |
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| 于妍;张殿朝;杨洪星;: "硅单晶片的激光标识技术研究", 电子工业专用设备, no. 10, 20 October 2011 (2011-10-20), pages 41 - 44 * |
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