CN112640124A - 氮化镓器件和集成电路的栅极驱动电路及电压调节器 - Google Patents

氮化镓器件和集成电路的栅极驱动电路及电压调节器 Download PDF

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CN112640124A
CN112640124A CN201980056656.6A CN201980056656A CN112640124A CN 112640124 A CN112640124 A CN 112640124A CN 201980056656 A CN201980056656 A CN 201980056656A CN 112640124 A CN112640124 A CN 112640124A
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voltage
ehemt
dhemt
hemt
gallium nitride
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CN112640124B (zh
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李湛明
傅玥
刘雁飞
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Suzhou Liangxin Microelectronics Co ltd
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Abstract

本发明实施例提供一种氮化镓器件和集成电路的栅极驱动电路及电压调节器，采用氮化镓HEMT技术实现的电压稳定和调压电路能够提供稳定的输出电压，适用于氮化镓功率晶体管栅极驱动器和氮化镓集成电路的低压辅助电源等应用。栅极驱动器和电压调节器模块包括至少一个串联连接在一起的DHEMT和至少两个EHEMTs，以便至少一个DHEMT作为可变电阻工作，并且至少两个EHEMTs作为限制输出的齐纳二极管工作。栅极驱动器和电压调节器模块可以实现作为一个氮化镓集成电路，并且可以在单个芯片上与放大器和功率HEMT等其他组件整体集成，以提供氮化镓HEMT功率模块集成电路。

Description

PCT国内申请，说明书已公开。

Claims (40)

  1. PCT国内申请，权利要求书已公开。
CN201980056656.6A 2018-06-27 2019-06-27 氮化镓器件和集成电路的栅极驱动电路及电压调节器 Active CN112640124B (zh)

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US201862690378P 2018-06-27 2018-06-27
US62/690,378 2018-06-27
US201862694663P 2018-07-06 2018-07-06
US62/694,663 2018-07-06
US16/449,356 US10686411B2 (en) 2018-06-27 2019-06-22 Gate drivers and voltage regulators for gallium nitride devices and integrated circuits
US16/449,356 2019-06-22
PCT/CN2019/093350 WO2020001553A1 (zh) 2018-06-27 2019-06-27 氮化镓器件和集成电路的栅极驱动电路及电压调节器

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US10720913B1 (en) * 2019-05-28 2020-07-21 Infineon Technologies Austria Ag Integrated failsafe pulldown circuit for GaN switch
US10958268B1 (en) 2019-09-04 2021-03-23 Infineon Technologies Austria Ag Transformer-based driver for power switches
US10979032B1 (en) 2020-01-08 2021-04-13 Infineon Technologies Austria Ag Time-programmable failsafe pulldown circuit for GaN switch
CN112311211B (zh) * 2020-10-22 2021-10-15 浙江大学 一种用于GaN HEMT功率器件的驱动控制芯片

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