CN112639177A - SiC单晶、SiC晶锭的制造方法和SiC晶片的制造方法 - Google Patents
SiC单晶、SiC晶锭的制造方法和SiC晶片的制造方法 Download PDFInfo
- Publication number
- CN112639177A CN112639177A CN201980053250.2A CN201980053250A CN112639177A CN 112639177 A CN112639177 A CN 112639177A CN 201980053250 A CN201980053250 A CN 201980053250A CN 112639177 A CN112639177 A CN 112639177A
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- Prior art keywords
- plane
- sic
- single crystal
- atomic arrangement
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- 239000013078 crystal Substances 0.000 title claims description 230
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 41
- 238000005520 cutting process Methods 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 152
- 229910010271 silicon carbide Inorganic materials 0.000 description 150
- 235000012431 wafers Nutrition 0.000 description 70
- 238000002441 X-ray diffraction Methods 0.000 description 41
- 238000005259 measurement Methods 0.000 description 41
- 238000005452 bending Methods 0.000 description 29
- 239000002994 raw material Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 235000002595 Solanum tuberosum Nutrition 0.000 description 5
- 244000061456 Solanum tuberosum Species 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000005092 sublimation method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003556 assay Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002370 liquid polymer infiltration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-152391 | 2018-08-13 | ||
| JP2018152391A JP2020026376A (ja) | 2018-08-13 | 2018-08-13 | ＳｉＣ単結晶、ＳｉＣインゴットの製造方法及びＳｉＣウェハの製造方法 |
| PCT/JP2019/031814 WO2020036170A1 (ja) | 2018-08-13 | 2019-08-13 | ＳｉＣ単結晶、ＳｉＣインゴットの製造方法及びＳｉＣウェハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112639177A true CN112639177A (zh) | 2021-04-09 |
Family
ID=69525367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980053250.2A Withdrawn CN112639177A (zh) | 2018-08-13 | 2019-08-13 | SiC单晶、SiC晶锭的制造方法和SiC晶片的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20210189596A1 (https=) |
| JP (1) | JP2020026376A (https=) |
| CN (1) | CN112639177A (https=) |
| WO (1) | WO2020036170A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7190841B2 (ja) | 2018-08-13 | 2022-12-16 | 昭和電工株式会社 | ＳｉＣインゴットの製造方法及びＳｉＣウェハの製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228164B1 (en) * | 1998-05-28 | 2001-05-08 | WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG | Process for producing a single crystal |
| TW200632153A (en) * | 2004-10-29 | 2006-09-16 | Sixon Ltd | Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal |
| JP2011111372A (ja) * | 2009-11-27 | 2011-06-09 | Showa Denko Kk | 炭化珪素単結晶及びその製造方法、並びに炭化珪素単結晶ウェーハ及び炭化珪素単結晶インゴット |
| JP2013136494A (ja) * | 2011-12-28 | 2013-07-11 | Toyota Central R&D Labs Inc | 単結晶製造装置、ＳｉＣ単結晶、ウェハ、及び、半導体デバイス |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8293623B2 (en) * | 2007-09-12 | 2012-10-23 | Showa Denko K.K. | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate |
| JP7190841B2 (ja) * | 2018-08-13 | 2022-12-16 | 昭和電工株式会社 | ＳｉＣインゴットの製造方法及びＳｉＣウェハの製造方法 |
-
2018
- 2018-08-13 JP JP2018152391A patent/JP2020026376A/ja active Pending
-
2019
- 2019-08-13 WO PCT/JP2019/031814 patent/WO2020036170A1/ja not_active Ceased
- 2019-08-13 CN CN201980053250.2A patent/CN112639177A/zh not_active Withdrawn
- 2019-08-13 US US17/267,691 patent/US20210189596A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228164B1 (en) * | 1998-05-28 | 2001-05-08 | WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG | Process for producing a single crystal |
| TW200632153A (en) * | 2004-10-29 | 2006-09-16 | Sixon Ltd | Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal |
| JP2011111372A (ja) * | 2009-11-27 | 2011-06-09 | Showa Denko Kk | 炭化珪素単結晶及びその製造方法、並びに炭化珪素単結晶ウェーハ及び炭化珪素単結晶インゴット |
| JP2013136494A (ja) * | 2011-12-28 | 2013-07-11 | Toyota Central R&D Labs Inc | 単結晶製造装置、ＳｉＣ単結晶、ウェハ、及び、半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020036170A1 (ja) | 2020-02-20 |
| US20210189596A1 (en) | 2021-06-24 |
| JP2020026376A (ja) | 2020-02-20 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20210409 |