CN112608141A - 一种用于高压避雷器的氧化锌压敏电阻及其制备方法 - Google Patents
一种用于高压避雷器的氧化锌压敏电阻及其制备方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000009768 microwave sintering Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 46
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 42
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 238000000498 ball milling Methods 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 33
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 30
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 21
- 229910052682 stishovite Inorganic materials 0.000 claims description 21
- 229910052905 tridymite Inorganic materials 0.000 claims description 21
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 19
- 239000011812 mixed powder Substances 0.000 claims description 18
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 18
- 239000012498 ultrapure water Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 14
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 claims description 12
- 239000011230 binding agent Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011267 electrode slurry Substances 0.000 claims description 9
- 239000011268 mixed slurry Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 7
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 5
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 4
- 239000012496 blank sample Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 238000005303 weighing Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- -1 Al (NO3) 3.9H 2O Chemical compound 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017583 La2O Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种用于高压避雷器的氧化锌压敏电阻及其制备方法,涉及无铅压电陶瓷技术领域,该方案采用铋、锑、钴、镍、锰、铬、铝、硅、稀土元素进行掺杂,提高其电学性能。本发明使用微波烧结的工艺制备的氧化锌压敏电阻,相比传统的烧结工艺,相同配方下微波烧结的烧结温度更低,烧结时间更短,可降低氧化锌压敏电阻在生产过程中的能源使用,节能环保。
Description
技术领域
本发明属于电子陶瓷元器件技术领域,尤其涉及一种微波烧结工艺制备用于高压避雷器的氧化锌压敏电阻的方法。
背景技术
ZnO压敏电阻避雷器具有非常优越的非线性特性、响应速度快、高能流通能力强等优异的电学性能,被广泛应用于电力系统、电网系统之中,作为抗浪涌冲击的保护设备。随着我国的超高压输电线路盒高速铁路的快速发展,国内对ZnO压敏电阻避雷器器件的需求量越来越高,对ZnO压敏电阻避雷器器件的电学性能也有着更高的要求。
传统的ZnO压敏电阻避雷器制备方法是使用箱式炉在1000°C以上进行烧结,温度较高而且保温时间长,制备过程能耗高。
微波烧结是一种新发展的特种烧结工艺,此工艺利用微波的作用下由材料内部介质损耗而产生热量进行加热的。加热过程中,材料内部分子或离子动能增加,降低了烧结活化能,具有传质速度快、加热均匀等特点。
发明内容
本发明的目的在于提供一种用于高压避雷器的氧化锌压敏电阻及其制备方法,以解决背景技术中所提出的问题。
为了实现上述目的,本发明所采取的技术方案如下:
一种用于高压避雷器的氧化锌压敏电阻,包括ZnO、Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2、In2O3以及稀土氧化物Sm2O3、Y2O3、CeO2、La2O3混合组成;混合物中,ZnO的摩尔分数为93.5%~97%,Bi2O3的摩尔分数为0.5%~1%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2的摩尔分数为1.5%~3.35%、In2O3的摩尔分数为0%~0.3%,稀土氧化物的摩尔分数为0%~0.3%。
一种用于高压避雷器的氧化锌压敏电阻的制备方法,包括如下步骤:
(1)按照权利要求1中所述的物料和配比混合后形成混合物,向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干并造粒得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%~0.006%,超纯水与粉体的质量比为3:2,球磨速率:400~500r/min,球磨时间:0.5h~4h;
(2)将干燥后的粉体倒入模具,使用压片机将混合粉体在7MPa~10MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min;
(3)将成型后的坯体样品在空气气氛中使用微波烧结炉在2.45GHz~24GHz的频率下800°C~1200°C下烧结,得到片式ZnO陶瓷;
(4)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中550°~650°C下处理得到片式氧化锌压敏电阻。
进一步地,所述步骤(1)中,向所述混合物中加入Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2,加入总量不超过总量的5.1mol%。
进一步地,所述步骤(1)中,还向所述混合物中加入SmO2、Y2O3、CeO2、La2O3、In2O3其中一种或多种,加入总量不超过所述混合物的0.3%mol。
进一步地,所述步骤(1)中,还向所述混合物中加入PVA作为粘结剂辅料,加入总量为混合物质量分数的0.003%~0.006%。
进一步地,所述步骤(3)~(4)中,将所述步骤(2)中得到的坯体在空气气氛中使用微波烧结工艺,在2.45GHz~24GHz的频率下,800°C~1200°C下烧结后,使用丝网印刷工艺两面印刷银电极,再在空气气氛中550°C~650°C热处理得到。
有益效果:本发明提供了一种用于高压避雷器的氧化锌压敏电阻及其制备方法,采用微波烧结工艺,缩短了烧结时间并降低了烧结温度,降低了制备过程中的耗能,且在稀土氧化物或氧化铟的作用下控制ZnO晶体在烧结过程中的发育,使得所得产品具备良好得电学性能。
附图说明
图1是本发明所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法流程图。
具体实施方式
本具体实施方法仅仅是对本发明的解释,并不是对本发明的限制。下述本发明各个实施方式中所涉及的技术特征只要彼此未构成冲突就可以互相组合。
实施例一
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2、稀土氧化物Sm2O3构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中,ZnO的摩尔分数为94.9%,Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.1%、0.5%、1%、0.5%、0.4%、0.5%,Sm2O3的摩尔分数为0.3%。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%,超纯水与粉体的质量比为3:2,球磨速率:500r/min,球磨时间:30min上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在7.5MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)将成型后的坯体在空气气氛中使用微波烧结炉在2.45GHz的频率下900°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例二
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2和Al(NO3)3`9H2O构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中, Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.14%、0.55%、1.06%、0.5%、0.35%、0.88%,Al(NO3)3`9H2O的摩尔分数为0.01%,余量为ZnO。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%,超纯水与粉体的质量比为3:2,球磨速率:500r/min,球磨时间:30min上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在7.5MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)成型后的坯体在空气气氛中使用微波烧结炉在2.45GHz的频率下900°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例三
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2、In2O3构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中,ZnO的摩尔分数为94.9%,Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.1%、0.5%、1%、0.5%、0.4%、0.5%,In2O3的摩尔分数为0.3%。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%,超纯水与粉体的质量比为3:2,球磨速率:480r/min,球磨时间:2h上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在8MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)将成型后的坯体在空气气氛中使用微波烧结炉在24GHz的频率下950°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例四
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2、稀土氧化物CeO2构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中,ZnO的摩尔分数为94.90%,Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.1%、0.5%、1%、0.5%、0.4%、0.5%,CeO2的摩尔分数为0.3%。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.006%,超纯水与粉体的质量比为3:2,球磨速率:500r/min,球磨时间:2h上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在7.5MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)将成型后的坯体在空气气氛中使用微波烧结炉在2.45GHz的频率下1000°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例五
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2、稀土氧化物CeO2构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中,ZnO的摩尔分数为94.90%,Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.1%、0.5%、1%、0.5%、0.4%、0.5%,Y2O3的摩尔分数为0.3%。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.006%,超纯水与粉体的质量比为3:2,球磨速率:500r/min,球磨时间:2h上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在7.5MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)将成型后的坯体在空气气氛中使用微波烧结炉在2.45GHz的频率下1000°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例六
一种用于高压避雷器的氧化锌压敏电阻,由ZnO、Bi2O3及Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2、稀土氧化物La2O3构成,制备方法包括以下步骤。
(1)将各粉料按所述摩尔质量称量。其中,ZnO的摩尔分数为94.90%,Bi2O3的摩尔分数为0.8%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、SiO2的摩尔分数分别为1.1%、0.5%、1%、0.5%、0.4%、0.5%,La2O3的摩尔分数为0.3%。
(2)向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干得到混合粉体;其中PVA为上述粉体混合物质量分数的0.006%,超纯水与粉体的质量比为3:2,球磨速率:500r/min,球磨时间:2h上述混合物球磨得到浆料所的浆料在90°C下烘干。
(3)将干燥后的粉体倒入模具,使用压片机将混合粉体在10MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min。
(4)将成型后的坯体在空气气氛中使用微波烧结炉在2.45GHz的频率下1000°C下烧结,得到片式ZnO陶瓷。
(5)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中650°C下处理得到片式氧化锌压敏电阻。
实施例七
一种用于高压避雷器的氧化锌压敏电阻,包括ZnO、Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2、In2O3以及稀土氧化物Sm2O3、Y2O3、CeO2、La2O3混合组成;混合物中,ZnO的摩尔分数为93.5%~97%,Bi2O3的摩尔分数为0.5%~1%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2的摩尔分数为1.5%~3.35%、In2O3的摩尔分数为0%~0.3%,稀土氧化物的摩尔分数为0%~0.3%。
一种用于高压避雷器的氧化锌压敏电阻的制备方法,包括如下步骤:
(1)按照权利要求1中所述的物料和配比混合后形成混合物,向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,加入PVA用于作为粘结剂辅料,加入总量为混合物质量分数的0.003%~0.006%,将所得浆料在90°C下烘干并造粒得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%~0.006%,超纯水与粉体的质量比为3:2,球磨速率:400~500r/min,球磨时间:0.5h~4h;
其中,向所述混合物中加入Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2,加入总量不超过总量的5.1mol%;
还向所述混合物中加入SmO2、Y2O3、CeO2、La2O3、In2O3其中一种或多种,加入总量不超过所述混合物的0.3%mol;
(2)将干燥后的粉体倒入模具,使用压片机将混合粉体在7MPa~10MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min;
(3)将成型后的坯体样品在空气气氛中使用微波烧结工艺,在2.45GHz~24GHz的频率下,800°C~1200°C下烧结后,使用丝网印刷工艺两面印刷银电极,再在空气气氛中550°C~650°C热处理得到片式ZnO陶瓷;
(4)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干。烘干完成后将其在空气气氛中550°~650°C下处理得到片式氧化锌压敏电阻。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.一种用于高压避雷器的氧化锌压敏电阻,其特征在于:包括ZnO、Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2、In2O3以及稀土氧化物Sm2O3、Y2O3、CeO2、La2O3混合组成;混合物中,ZnO的摩尔分数为93.5%~97%,Bi2O3的摩尔分数为0.5%~1%,Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2的摩尔分数为1.5%~3.35%、In2O3的摩尔分数为0%~0.3%,稀土氧化物的摩尔分数为0%~0.3%。
2.根据权利要求1所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法,其特征在于,包括如下步骤:
(1)按照权利要求1中所述的物料和配比混合后形成混合物,向上述混合物中加入粘结剂PVA和超纯水后使用球磨机进行球磨混合得到混合浆料,将所得浆料在90°C下烘干并造粒得到混合粉体;其中PVA为上述粉体混合物质量分数的0.003%~0.006%,超纯水与粉体的质量比为3:2,球磨速率:400~500r/min,球磨时间:0.5h~4h;
(2)将干燥后的粉体倒入模具,使用压片机将混合粉体在7MPa~10MPa下压制成型得到坯体并用鼓风干燥机150°C下干燥30min;
(3)将成型后的坯体样品在空气气氛中使用微波烧结炉在2.45GHz~24GHz的频率下800°C~1200°C下烧结,得到片式ZnO陶瓷;
(4)采用丝网印刷工艺为上述片式ZnO陶瓷两面印刷银电极浆料,使用鼓风干燥箱150°C下烘干,烘干完成后将其在空气气氛中550°~650°C下处理得到片式氧化锌压敏电阻。
3.根据权利要求2所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法,其特征在于:所述步骤(1)中,向所述混合物中加入Bi2O3、Sb2O3、Co3O4、NiO、MnO2、Cr2O3、Al(NO3)3·9H2O、SiO2,加入总量不超过总量的5.1mol%。
4.根据权利要求2所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法,其特征在于:所述步骤(1)中,还向所述混合物中加入SmO2、Y2O3、CeO2、La2O3、In2O3其中一种或多种,加入总量不超过所述混合物的0.3%mol。
5.根据权利要求2所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法,其特征在于:所述步骤(1)中,还向所述混合物中加入PVA作为粘结剂辅料,加入总量为混合物质量分数的0.003%~0.006%。
6.根据权利要求2至5任意一项所述的一种用于高压避雷器的氧化锌压敏电阻的制备方法,其特征在于:所述步骤(3)~(4)中,将所述步骤(2)中得到的坯体在空气气氛中使用微波烧结工艺,在2.45GHz~24GHz的频率下,800°C~1200°C下烧结后,使用丝网印刷工艺两面印刷银电极,再在空气气氛中550°C~650°C热处理得到。
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