CN112531069A - 一种非对称电极石墨烯/二维材料异质结级联光电探测器 - Google Patents
一种非对称电极石墨烯/二维材料异质结级联光电探测器 Download PDFInfo
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Abstract
本发明公开了一种非对称电极石墨烯/二维材料异质结级联光电探测器，属于光电技术领域。该结构由衬底、功函数不同的两个电极、以及两电极之间的多层异质结构成。由于非对称电极和不同费米能级的石墨烯/二维材料异质结的存在，可以形成大的电势梯度差，当光入射后光生载流子迅速扩散到外电路形成光电流，避免了载流子的复合。该器件充分利用了石墨稀与二维材料的性质，提高了探测器的光响应度，同时由于电势梯度差的存在增加了载流子的移动速率，提升了响应速度。
Description
技术领域
本发明属于光电技术领域，具体涉及一种石墨烯与二维材料复合的光电探测器。
技术背景
光电探测器是光照射到器件表面而产生电信号的一种装置，在电子工业、军事中均有广泛应用。随着科学技术的发展，对探测器质量的要求逐渐提高，而衡量光电探测器好坏的重要参数为光吸收波段、光响应度和光响应时间。传统的基于Ⅲ-Ⅴ族半导体的光电探测器由于其半导体特性在吸收带宽及响应时间等方面都受到限制。另外，随着器件集成度的逐渐提高，器件尺寸也成为制约传统光电探测器发展的因素。因此研究一种具有高响应、快速响应的光电探测器对未来光电产业具有重要的意义。
石墨烯的宽光谱吸收、极高的载流子迁移率(2.0X 105cm2/(V.S))、超快的光响应速度等特点，使其在光电探测器的应用有着巨大的潜力。但是由于石墨烯对光的吸收很弱(2.3％)，使其具有较低的光响应度。这一不足之处使石墨烯基光电探测的性能大大的受限。这也意味着单一的石墨烯器件发展已经遇到瓶颈。
随着石墨稀的发现，很多新型二维功能材料同样受到人们的关注，尤其是过镀金属硫化物。这类二维材料对光有较高的吸收，并且具有高的量子效率，据计算显示二硫化钼光电探测器光响应度为石墨烯的10万倍。但是这种探测器具有载流子迁移率很小、响应时间长的等缺点。由此可见单一的二维材料探测器也无法满足人们日益提高的需求。
发明内容
本发明针对现有光电探测器的技术缺点，旨在提供一种石墨烯与二维材料复合的光电探测器，在利用石墨烯光电探测器优点的同时解决了对光吸收弱等问题。进而实现超快、高响应的光电探测器。
本发明通过以下技术方案实现：
一种非对称电极二维材料/石墨烯异质结级联光电探测器，包括从下至上依次设置的衬底、第一电极、二维材料/石墨烯异质结、第二电极，其特征在于，所述二维材料/石墨烯异质结为石墨烯与二维材料交错层叠构成的n层异质结。
进一步地，所述二维材料为过渡金属硫化物，如MoS2，WS2等。
进一步地，所述n层异质结中，n的值为3-5，且从底层到顶层的费米能级逐层递减。
进一步地，所述光电探测器制成后，能够通过退火增加异质结界面耦合，进一步提高器件的载流子传输性能。
进一步地，所述衬底为双层结构的复合衬底，其中上层为二氧化硅，下层为硅。
进一步地，所述第一电极为功函数高于等于5.1的金属电极，材料为Pt、Au等；所述第二电极为功函数低于等于4.26的金属电极，材料为Ag等。
进一步地，所述第一电极、第二电极通过磁控溅射或热蒸镀方式制成，第一电极的厚度为10-100um，第二电极的厚度为5-20nm。
进一步地，所述退火条件为：在管式加热炉内通入惰性气体，设置炉内温度为400℃-600℃，压强1pa-10pa，对材料加热3h-5h。
本发明通过石墨稀与二维材料交叠形成n层异质结，当光照射到物质表面时，光生载流子由于n层异质结所形成的能级梯度迅速扩散到外电路形成光电流。本发明优点包括：
1.本发明采用功函数不同的非对称电极，促进了由第一电极到第二电极费米能级差的形成。可以使光生载流子产生后迅速扩散至外电路，同时由于能级差的存在也避免了电子空穴的迅速复合，由此可以增大器件的光响应。
2.本发明采用石墨烯与二维材料相结合，分别利用了石墨烯的高的载流子迁移率、超快的响应时间，以及二维材料对光的高吸收率。可以实现超快，超高响应光电探测器。
3.本发明采用n层异质结级联的形式，可以形成更多的电势梯度，为光电流的提高起到至关重要的作用。
4.退火能够增减材料之间的耦合，优化材料的性能。
5.因为采用垂直叠加，可以减小器件尺寸。更适于超高的光电集成。
附图说明
图1为实施例器件结构示意图。其中1为衬底，2为第一电极，3为异质结，4为第二电极。
图2为异质结的结构示意图。其中3-1为石墨烯，3-2为二维材料，3-3为石墨烯，3-4为二维材料，3-5为石墨烯。
图3为双层异质结顶层石墨烯退火前后的光学显微镜图。
图4为双层异质结顶层石墨烯退火前后的拉曼图。
具体实施方式
本发明主要利用了非对称电极和不同费米能级的石墨烯/二维材料，使各层之间形成逐级变化的电势梯度，进而使两电极之间形成明显的电势梯度。当光入射后光生载流子迅速扩散到外电路形成光电流，避免了载流子的复合。该器件充分利用了石墨稀与二维材料的性质，很大程度上提高了探测器的光响应度，同时由于电势梯度差的存在增加了载流子的移动速率，减少了响应时间。本发明的结构示意图如图1所示，该器件具体制备步骤如下：
1.通过CVD(化学气相沉积法)生长单层石墨烯以及MoS2二维材料。
2.通过热蒸镀在Si/SiO2衬底表面制备40nm厚的Au第一电极。
3.顺序转移石墨烯、二维材料至第一电极表面，得到五层结构的异质结，从第一电极到第二电极的方向，五层结构的异质结的费米能级逐层降低。其中，转移前通过化学办法对二者进行不同程度的掺杂，实现费米能级逐层降低；转移方法为利用PMMA(聚甲基丙烯酸甲酯)进行转移。
4.通过光刻对多层异质结构进行图形化。
5.利用热蒸镀蒸镀20nmAg作为第二电极。
6.在管式加热炉内进行加热退火；其中，管内温度为400℃，压强为5pa，退火时间为3h。
根据以上步骤，采用不同的二维材料，能够制造不同结构的光电探测器，比如：
1.二维材料/石墨烯/二维材料双异质结光电探测器。
2.通过转移实现石墨烯/二维材料/石墨烯/二维材料/石墨烯四个异质结级联的光电探测器。
3.石墨烯/二维材料1(MoS2)/石墨烯/二维材料2(WS2)/石墨烯，多种二维材料与石墨稀结合形成异质结级联的光电探测器。
通过图3可知，退火后，石墨烯表面的杂质被清除掉，使得石墨烯表面更加洁净，进一步减少杂质对器件性能的影响，发挥出器件更加的优异性能。通过图4可知，退火后，能够增加石墨烯层间耦合。进一步增加异质结界面的耦合，更好的进行载流子的传输，加快器件的响应时间和响应速度。
Claims (10)
1.一种非对称电极二维材料/石墨烯异质结级联光电探测器，包括从下至上依次设置的衬底、第一电极、二维材料/石墨烯异质结、第二电极，其特征在于，所述二维材料/石墨烯异质结为石墨烯与二维材料交错层叠构成的n层异质结。
2.如权利要求1所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述n层异质结中，n的取值为3-5，且从底层到顶层的费米能级逐层递减。
3.如权利要求2所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述第一电极为功函数高于等于5.1的金属电极；所述第二电极为功函数低于等于4.26的金属电极。
4.如权利要求1所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述二维材料为过渡金属硫化物。
5.如权利要求1所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述二维材料为MoS2、或者WS2。
6.如权利要求1-5所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述光电探测器制成后，通过退火增加异质结界面耦合。
7.如权利要求1-5所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述衬底为双层结构的复合衬底，其中上层为二氧化硅，下层为硅。
8.如权利要求3所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述第一电极为为Pt、或Au；所述第二电极为Ag。
9.如权利要求8所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述第一电极、第二电极通过磁控溅射或热蒸镀方式制成，第一电极的厚度为10-100um，第二电极的厚度为5-20nm。
10.如权利要求6所述的一种非对称电极二维材料/石墨烯异质结级联光电探测器，其特征在于，所述退火条件为：在管式加热炉内通入惰性气体，设置炉内温度为400℃-600℃，压强1pa-10pa，对材料加热3h-5h。
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