CN112466983A - Method and equipment for repairing solar cell interface defects - Google Patents
Method and equipment for repairing solar cell interface defects Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method and equipment for repairing interface defects of a solar cell, wherein a laser light source is adopted to irradiate the solar cell at a certain temperature to complete interface defect repair, wherein light spots irradiated on the solar cell by laser emitted by the laser light source are flat-top light spots and cover the surface of the solar cell; the solar cell is provided with a passivation layer containing hydrogen. According to the invention, by adopting the laser light source, the built-in electric field in the solar cell is greatly enhanced, so that more energy is obtained by hydrogen bonds in the passivation layer and is converted back to atomic hydrogen to be collected on the interface, and at the moment, a certain temperature is assisted to ensure that a passivation film with a looser interface of the solar cell device becomes compact and smooth, so that part of atomic hydrogen is sealed to form an atomic hydrogen reservoir, the atomic hydrogen is provided for the defects of the interface, the passivation repairing effect is achieved, the open-circuit voltage Voc is improved, and the efficiency of the solar cell device is improved.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a method and equipment for repairing defects of a solar cell interface.
Background
The surface passivation technology is an important technology in a silicon-based solar cell, the surface passivation can effectively improve the conversion efficiency of solar energy in the application of the silicon-based solar cell, and the interface of the solar cell is often rich in a plurality of defects, and can capture and compound carriers to damage the electrical property of a device.
Industry has made a number of advances in repairing interfacial defects, such as s.dellof et al, appl.phys.lett.93(2008)032101, which found that annealing for long periods of time at a sun intensity contributes to a reduction in the interfacial defect density of silicon-based solar devices, Kobayashi E et al, EPFL, Sol Energ Mat Sol C2017:173:43-9, which found that silicon-based solar device interfacial defects were partially repaired under long-term illumination at 32 degrees per sun. However, these findings or treatments are either too weak in light intensity and too long in treatment time, or add extra devices, increase production costs, and have limited effectiveness.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method and the equipment for repairing the interface defects of the solar cell are provided, and the repairing effect of the interface defects is improved.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method for repairing defects of a solar cell interface comprises the following steps:
irradiating the solar cell by adopting a laser light source at a certain temperature to finish interface defect repair, wherein a light spot irradiated on the solar cell by laser emitted by the laser light source is a flat-top light spot and covers the surface of the solar cell;
the solar cell is provided with a passivation layer containing hydrogen.
According to the method, the certain temperature is 120-450 ℃.
According to the method, in the irradiation process of the laser light source, the temperature of the solar cell is controlled, so that the solar cell is maintained within a certain range of fluctuation above and below the certain temperature.
According to the method, the light intensity of the laser irradiating on the surface of the solar cell piece is 50-200kW/m2。
According to the method, the irradiation time of the laser light source is 1s-600 s.
According to the method, the steps of the method are carried out before or after the electrodes are prepared on the solar cell.
According to the method, the steps of the method occur before the electrodes are prepared on the solar cell.
According to the method, the solar cell is an N-type solar cell or a P-type solar cell.
According to the method, the solar cell is an N-type solar cell.
According to the method, the solar cell is an N-HIT, N-TOPCON, N-PEAL or N-PERT cell.
The method for repairing the interface defect of the solar cell further comprises the step of preheating the solar cell before irradiation of a laser light source so that the solar cell reaches a certain temperature. The certain temperature is the temperature of the solar cell when the laser light source irradiates.
The method for repairing the defects of the solar cell interface further comprises the step of cooling the solar cell after the irradiation of a laser light source.
An apparatus for implementing the method for repairing defects of a solar cell interface is characterized in that: the equipment comprises a laser device, an objective table and a temperature control device; wherein the content of the first and second substances,
the objective table is used for placing the solar cell, the temperature control device is used for enabling the solar cell to be at a certain temperature, and the laser device is used for irradiating laser subjected to flat top shaping to the solar cell;
the laser device comprises a laser and a laser shaping device, the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a certain size to cover the surface of the solar cell.
According to the equipment, the laser shaping device is a diffraction optical element or a fiber laser homogenizer.
According to the equipment, the device also comprises a feeding device which is used for placing the battery piece to be processed on the objective table.
The device also comprises a blanking device used for removing the processed solar cell slice from the objective table.
According to the equipment, the objective table comprises 3 stations, and the loading station, the laser irradiation station and the blanking station are sequentially arranged according to the processing sequence, and are used for respectively loading, irradiating and blanking the solar cell.
According to the equipment, the feeding station, the laser irradiation station and the blanking station are arranged along the circumferential direction and are rotated by 3 table tops through the rotating mechanism.
According to the equipment, the feeding station, the laser irradiation station and the blanking station are arranged along a straight line and are conveyed to the feeding station through the conveying belt.
According to the equipment, the device further comprises a preheating station arranged in front of the laser irradiation station, and a heating device is arranged on the preheating station and used for preheating the solar cell.
The invention has the beneficial effects that:
1. by adopting a stable, high-light-intensity and long-service-life laser light source and setting specific process conditions, the built-in electric field inside the solar cell is greatly enhanced, more energy obtained by hydrogen bonds in the passivation layer is changed into atomic hydrogen to be collected on the interface, a certain temperature is assisted to ensure that a loose passivation film on the interface of the solar cell device becomes compact and smooth, partial atomic hydrogen is sealed, an atomic hydrogen library is formed, the atomic hydrogen is provided for the defects of the interface, the passivation repairing effect is achieved, the open-circuit voltage is improved, and the efficiency of the solar cell device is improved.
2. The solar cell is subjected to constant temperature control during laser irradiation, so that the temperature fluctuation of the cell can be prevented from being overlarge, the smoothness and compactness of a passive film interface are improved, and the stability of an interface repairing effect is improved.
3. The solar cell is preheated before laser irradiation, so that the stress of the loose passivation film can be released, the conversion into the compact passivation film can be accelerated, and the repair efficiency can be improved.
4. Through setting up a plurality of stations, saved the time, improve work efficiency.
Drawings
Fig. 1 is a schematic diagram of a repair process according to an embodiment of the invention.
FIG. 2 is a flowchart of a method according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a mechanism of the apparatus and a schematic diagram of a loading and unloading process according to an embodiment of the present invention, wherein (a) is a top view of (b).
Fig. 4 is a schematic diagram of an apparatus structure and a schematic diagram of a loading and unloading process according to another embodiment of the present invention, wherein (a) is a top view of (b).
Fig. 5 is a schematic diagram of an apparatus structure and a loading and unloading process according to another embodiment of the present invention.
Fig. 6 is a schematic diagram of an apparatus structure and a loading and unloading process according to another embodiment of the present invention.
Fig. 7 is a schematic view of an apparatus structure and a schematic view of a loading and unloading process according to another embodiment of the present invention, wherein (a) is a top view of (b).
In the figure: the method comprises the following steps of 1-a solar cell, 2-an object stage, 3-a laser light source, 4-a loading station, 5-a preheating station, 6-a laser irradiation station, 7-a blanking station, 8-a loading device, 9-a blanking device, 10-a first station, 11-a second station, 12-a rotating motor, 13-a rotating arm and 14-a loading and blanking device.
Detailed Description
The invention is further illustrated by the following specific examples and figures.
As shown in fig. 1, the method comprises the following steps:
the method comprises the steps of irradiating a solar cell 1 by a laser light source 3 at a certain temperature to finish interface defect repair, wherein a light spot irradiated on the solar cell by laser light emitted by the laser light source 3 is a flat-top light spot and covers the surface of the solar cell 1 (the surface is the surface mainly receiving light).
The solar cell 1 is provided with a passivation layer containing hydrogen.
The light intensity of the laser irradiated on the surface of the solar cell piece is 50-200kW/m2Preferably 60-120kW/m2. The laser is infrared laser, ultraviolet laser or green light. Preferably an infrared laser. The irradiation time of the laser light source is 1s-600s, preferably 1-60s, and more preferably 5-40 s. The constant temperature is 120-450 ℃, preferably 120-400 ℃, and more preferably 150-250 ℃.
In this embodiment, the solar cell 1 is disposed on the stage 2. The laser spot can be round, square or irregular, as long as the irradiation area of the laser on the table top must cover the whole surface of the solar cell.
The surface of the solar cell is irradiated by the laser, so that the surface of the solar cell is sufficiently illuminated, and the hydrogen in the passivation film containing the hydrogen bond can obtain sufficient energy and be changed back to atomic hydrogen in a very short time.
In addition, in the irradiation process of the laser light source, the solar cell is controlled by temperature, so that the solar cell is maintained within a certain range of fluctuation of the certain temperature, specifically, the certain temperature is maintained at plus or minus 5 ℃, preferably plus or minus 1 ℃, and thus, the temperature fluctuation of the cell can be prevented from being too large, and the stability of the interface repairing process effect is improved.
The high-power laser is used as a solar cell interface repair light source, and the high-power laser has good laser stability and long service life, can monitor the laser energy and the illumination intensity in real time, basically does not need replacement of spare parts, and has low maintenance cost. In addition, because the energy of the laser beam is totally gathered on the surface of the solar cell, the energy waste is little, so that the energy consumption of the laser as the interface repair of the solar cell is far lower than that of the traditional LED furnace, and the energy-saving and environment-friendly effects are achieved. The laser irradiation repair time is short, and the production efficiency is greatly improved.
The steps of the method can occur before or after the electrodes are prepared on the solar cell.
Preferably, the method steps preferably take place before the solar cell sheet is provided with electrodes.
In the prior art, when the interface of the battery is repaired, the common property is that the battery is processed after the product is finished (finished product), namely the battery is processed after an electrode is prepared, and for some batteries with special structures, the reliability of the electrode can be seriously influenced if the electrode is low-temperature silver paste or the electrode is electroplated copper silver, and the subsequent higher-temperature processing is not beneficial to the production of subsequent processes. Therefore, the method is particularly suitable for HIT batteries when the method is carried out before the electrodes are prepared, and because the electrodes of the batteries are printed with low-temperature silver paste or electroplated with copper and silver, the method does not influence the reliability of the subsequent electrodes and is beneficial to the production of the subsequent procedures.
The solar cell of the method can be a P-type solar cell or an N-type solar cell.
More preferred are N-type solar cells.
The method has better interface repairing effect on the N-type solar cell and realizes photoinduced gain. The solar cell of the method is preferably a hydrogenated amorphous silicon passivated HIT cell, can also be an ultrathin tunneling oxide layer, a highly doped polysilicon thin layer passivated Topcon cell and the like, and can also be a back SiO (silicon dioxide) thin layer passivated Topcon cell2And SiNxPassivation layer, front side SiNxA layer of N-PERL solar cells, and the like.
Preferably, the method is more suitable for N-HIT, N-TOPCON, N-PERL or N-PERT battery plates and the like, and has better gain effect.
Referring to fig. 2, the method preferably includes the step of preheating the solar cell 1 to a certain temperature before the laser irradiation.
Preferably, the method further comprises the step of cooling the cell after the laser irradiation. The cooling can be natural cooling or air cooling or water cooling.
The invention also provides equipment for realizing the solar cell interface defect repair, which comprises a laser device, an objective table and a temperature control device; the solar cell is placed on the objective table, the temperature control device is used for controlling the temperature of the solar cell, and the laser device is used for irradiating flat-top shaped laser to the solar cell; the laser device comprises a laser and a laser shaping device, wherein the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a proper size and covering the surface of the solar cell.
The laser can be a continuous laser or a pulse laser, and the pulse width of the pulse laser is microsecond, nanosecond, picosecond or femtosecond.
The laser shaping device is a beam shaper or a fiber laser homogenizer. When the emergent light of the laser is shaped and amplified, a light path can be designed according to actual requirements, so that the shape, the size and the energy distribution of light spots are controlled. The laser power and the like can be monitored accurately in real time, and the LED furnace is quick and convenient, and the illumination intensity of a common LED furnace is required to be tested for a long time after all light is turned on and the furnace door is closed.
The technical means for realizing laser beam shaping (beam shaper) is more, a Diffractive Optical Element (DOE) is one of the technical means, and a flat-Top light spot which has uniform energy distribution, a steep boundary and a specific shape and can be called as a flat-Top hat (Top-hat) light spot is obtained by modulating the phase of laser through a diffraction device. The spot shape may be circular, rectangular, square, rectilinear, elliptical or may be customized to the needs of the customer. After the laser beam passes through the flat-top beam shaper, the energy distribution of the light spot can be uniformly processed, and the effect of flat-top light is achieved.
The principle of the fiber laser homogenizer is as follows: the Gaussian light is incident at a certain divergence angle, passes through the fiber laser homogenizer and then outputs collimated flat-top laser.
Other shaping devices capable of realizing laser shaping can also be suitable as long as the light spots can be shaped into flat-topped light spots.
Those skilled in the art will appreciate that the laser apparatus may further comprise a collimating means disposed between the laser and the beam shaping device, and a focusing means disposed behind the shaping device.
Of course, other components, including beam expanders, mirrors, etc., may be added to optimize the optical path.
The temperature control device is a temperature control plate arranged on the objective table, and can also control the temperature by using a cavity arranged outside the objective table. The temperature control device can also be used for preheating the solar cell, controlling the temperature after preheating is finished, and finishing the laser irradiation step at a certain temperature.
Preferably, the equipment further comprises a loading device for transferring the solar cell slices to the objective table. The feeding mode can be a feeding mode of a manipulator with a sucker and the like.
Further preferably, the equipment further comprises a blanking device used for removing the solar cell slice from the objective table.
The blanking device can be in the mode of a manipulator with a sucker and the like, and the sucker is preferably a metal sucker. And a water cooling or air cooling device is arranged on the metal sucker. So set up, can utilize metal sucking disc's heat conductivity to dispel the heat to solar wafer at the in-process of unloading, adopt water-cooling or forced air cooling to assist in addition for can drop to the room temperature rapidly at the unloading in-process after solar wafer interface defect restores.
The plurality of stations can be arranged on the station, and the laser irradiation, the feeding, the blanking and the like are divided into independent stations, so that when one solar cell is subjected to laser irradiation, the continuous production is realized in the feeding process of the next solar cell, and the whole time is saved.
As a station setting, as shown in fig. 3, the stage includes 3 stations, which are a loading station 4, a laser irradiation station 6, and a discharging station 7 according to a processing sequence, and the laser light source 3 is disposed above the laser irradiation station 6. The feeding station 4, the laser irradiation station 6 and the blanking station 7 are circumferentially arranged and are rotationally reached by 3 table tops through a rotating mechanism. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
Preferably, a preheating station 5 separately provided between the loading station and the irradiation station may be further included to perform preheating.
As a station arrangement, as shown in fig. 4, the objective table includes 4 stations, which are a feeding station 4, a preheating station 5, a laser irradiation station 6 and a blanking station 7 in sequence according to the processing sequence; the laser light source 3 is disposed above the laser irradiation station 6. The feeding station 4, the preheating station 5, the laser irradiation station 6 and the blanking station 7 are circumferentially arranged and are rotated by 4 table tops through a rotating mechanism. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
As another station setting, as an optimization scheme of the first station setting, the feeding station and the discharging station can be the same station.
As another station, as shown in fig. 5, the objective table includes 3 stations, which are a feeding station 4, a laser irradiation station 6 and a discharging station 7 in sequence; the feeding station 4, the laser irradiation station 6 and the blanking station 7 are arranged on a conveyor belt in sequence and are conveyed to reach through the conveyor belt. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
As another station, as shown in fig. 6, the objective table includes 4 stations, which are a feeding station 4, a preheating station 5, a laser irradiation station 6, and a discharging station 7 in sequence according to the processing sequence; the feeding station 4, the preheating station 5, the laser irradiation station 6 and the blanking station 7 are sequentially arranged on a conveyor belt and are conveyed to the feeding station through the conveyor belt.
As another station arrangement, as shown in fig. 7, the stage includes 2 stations, wherein the second station 11 is used for loading and unloading, and the first station 10 is used for laser irradiation and is reached by 2 tables through rotation of the rotating mechanism. The rotating mechanism comprises a rotating motor 12 in the middle and rotating arms 13 arranged on two sides of the rotating motor, and the two rotating arms 13 are respectively connected with the two table tops. With this arrangement, the loading and unloading device 14 is an integrated structure and can be a same suction cup.
Example 1
In this embodiment, the HIT solar cell is taken as an example, and is a cell including a hydrogenated amorphous silicon passivation layer and having ITO conductive films plated on both the front and back surfaces, and no electrode is provided.
A method for repairing defects of a solar cell interface by taking laser as a light source is carried out according to the following method:
controlling the temperature of the solar cell at 120 ℃ by using a temperature control device, and carrying out laser irradiation on the surface of the solar cell, wherein the laser is a laserIs an infrared continuous laser with the light intensity of 50kw/m2The irradiation time is 600s, the laser spots are square spots and cover the surface of the cell, and the laser energy is uniformly distributed in the spots. The high-power laser irradiates the solar cell, only a short time is needed to enable hydrogen in the passivation film containing the hydrogen bond to obtain enough energy and change the energy back to atomic hydrogen, and the dense and smooth passivation film seals partial atomic H to form an atomic H library and provide atomic H for the defects of the interface.
Example 2
In this embodiment, the HIT solar cell is taken as an example, and is a cell including a passivation layer and having ITO conductive films plated on both sides, and no electrode is provided.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 180 ℃, and the light intensity is 90kw/m2The laser is an infrared laser, and the irradiation time is 150 s.
Example 3
The method of this example is the same as example 2, except that the solar cell irradiated with the light is a solar cell having an upper electrode.
The open circuit voltage and efficiency of the batteries processed in examples 1 and 2 and the batteries of reference group 1 and 2 were tested by applying electrodes in the same manner as in example 3. The reference group 1 is a cell which is not treated by the method of the embodiment and is not treated by other repairing methods. Reference group 2 is a cell processed by the LED furnace repairing method, and the light intensity is 40kw/m2The illumination time is 15 min.
Example 4
In this embodiment, the HIT solar cell is taken as an example, and is a cell including a hydrogenated amorphous silicon passivation layer and having ITO conductive films plated on both the front and back surfaces, and no electrode is provided.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 250 ℃, and the light intensity is 120kw/m2The laser is an infrared laser, and the irradiation time is 60 s.
Example 5
This example is the same as example 4 except that it is a battery sheet of the upper electrode.
The open circuit voltage and efficiency of the cell treated in example 4 was tested by applying the electrodes in the same manner as in example 5.
Table 1 shows the open-circuit voltage and efficiency test results of reference groups 1 to 2, and examples 1 to 5
TABLE 1
| Sample (I) | Voc(v) | Efficiency (%) | Efficiency gain (%) |
| |
0.7382 | 22.83 | - |
| |
0.7421 | 23.13 | 0.30 |
| Example 1 | 0.7452 | 23.31 | 0.48 |
| Example 2 | 0.7455 | 23.35 | 0.52 |
| Example 3 | 0.7423 | 23.18 | 0.35 |
| Example 4 | 0.7454 | 23.34 | 0.51 |
| Example 5 | 0.7421 | 23.14 | 0.31 |
From the test results, the HIT solar cells processed by the method of the invention all show good efficiency gain.
Example 6
In this embodiment, a TopCon solar cell is taken as an example, and an ultra-thin tunnel oxide layer and a highly doped polysilicon thin layer are prepared on the back surface of the cell to form a passivation contact structure, but no electrode is provided.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 300 ℃, and the light intensity is 120kw/m2The laser is an infrared laser, and the irradiation time is 30 s.
Example 7
This example is the same as example 6 except that it is a battery sheet of the upper electrode.
The open circuit voltage and efficiency of the cells treated in example 6 and the cells of reference group 3 were tested by applying the electrodes in the same manner as in example 7. Reference group 3 is a batch of battery pieces that have not been processed by the method of this embodiment, nor by other repair methods.
Table 2 shows the open-circuit voltage and efficiency test results for reference group 3, and examples 6-7.
TABLE 2
| Sample (I) | Voc(v) | Efficiency of | Efficiency gain (%) |
| |
0.6968 | 23.14 | - |
| Example 6 | 0.7011 | 23.34 | 0.20 |
| Example 7 | 0.6985 | 23.29 | 0.15 |
From the test results, the TopCon solar cells treated by the method of the invention all show good efficiency gain.
Example 8
This embodiment takes a PERC double-sided solar cell as an example, which is plated with Al on the back side2O3And SiNxPassivation layer, front side SiNxA layer, but not an upper electrode.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 350 ℃, and the light intensity is 150kw/m2The laser is an infrared laser, and the irradiation time is 20 s.
Example 9
This example is the same as example 8 except that it is a battery sheet of the upper electrode.
The open circuit voltage and efficiency of the completed cell treated in example 8 and the cell of reference group 4 were tested by applying the electrodes in the same manner as in example 9. Reference group 4 is a batch of battery cells that have not been processed by the method of this embodiment, nor by other repair methods.
Example 10
This embodiment takes a PERC double-sided solar cell as an example, which is plated with Al on the back side2O3And SiNxPassivation layer, front side SiNxA layer, but not an upper electrode.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 400 ℃, and the light intensity is 180kw/m2The laser is an infrared laser, and the irradiation time is 10 s.
Example 11
The method of this example is the same as example 10 except that the solar cell irradiated with the light is a solar cell after processing an electrode.
The electrode treated in example 10 was attached in the same manner as in example 11, and the open circuit voltage and efficiency were measured.
Table 3 shows the open-circuit voltage and efficiency test results of reference group 4, and examples 8 to 11.
TABLE 3
| Sample (I) | Voc(v) | Efficiency of | Efficiency gain (%) |
| |
0.6824 | 22.27 | - |
| Example 8 | 0.6852 | 22.39％ | 0.12％ |
| Example 9 | 0.6843 | 22.35％ | 0.08％ |
| Example 10 | 0.6845 | 22.36％ | 0.09％ |
| Example 11 | 0.6837 | 22.33％ | 0.06％ |
From the test results, the solar cells treated by the method of the invention all show good efficiency gain.
Example 12
This embodiment takes an N-PERL solar cell as an example, which is a back side SiO plated2And SiNxPassivation layer, front side SiNxA layer, but not an upper electrode.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 450 ℃, and the light intensity is 200kw/m2The laser is an infrared laser, and the irradiation time is 1 s.
Example 13
This example is the same as example 12 except that it is a battery sheet of the upper electrode.
The open circuit voltage and efficiency of the completed cells treated in example 12 and the cells of reference group 5 were tested by applying the electrodes in the same manner as in example 13. Reference group 5 is a batch of battery pieces that have not been processed by the method of this embodiment, nor by other repair methods.
Table 4 shows the open-circuit voltage and efficiency test results of reference group 5, and examples 12 to 13.
TABLE 4
| Sample (I) | Voc(v) | Efficiency of | Efficiency gain (%) |
| |
0.6684 | 21.13 | - |
| Example 12 | - | 21.21％ | 0.08％ |
| Example 13 | 0.6702 | 21.18％ | 0.05％ |
From the test results, the N-PERL solar cells processed by the method of the invention all show good efficiency gain.
Example 14
The difference between the method for repairing the defects of the solar cell interface by using the laser as the light source and the rest of the embodiment 1 is that the method further comprises the processes of preheating and cooling the solar cell.
1. The solar cell is preheated for 40s (the time required for heating to the preheating temperature is short, about 1-2s, most of the time is that the solar cell enters the irradiation station after the laser irradiation station finishes irradiation at the constant temperature of the preheating station, so that the preheating time is the same as the irradiation time, the temperature of the solar cell reaches 250 ℃.
2. The solar cell sheet was irradiated with laser light in the same manner as in example 1.
3. And cooling the battery piece.
According to the embodiment, the solar cell is preheated before laser irradiation, so that the stress of the loose passivation film can be released, the conversion into the compact passivation film can be accelerated, and the repair efficiency can be improved.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (14)
1. A method for repairing defects of a solar cell interface is characterized by comprising the following steps: the method comprises the following steps:
irradiating the solar cell by adopting a laser light source at a certain temperature to finish interface defect repair, wherein a light spot irradiated on the solar cell by laser emitted by the laser light source is a flat-top light spot and covers the surface of the solar cell;
the solar cell is provided with a passivation layer containing hydrogen.
2. The method of claim 1, wherein: the certain temperature is 120-450 ℃.
3. The method of claim 1, wherein: the light intensity of the laser irradiated on the surface of the solar cell is 50-200kW/m2。
4. The method of claim 1, wherein: and in the irradiation process of the laser light source, controlling the temperature of the solar cell to maintain the solar cell at a certain temperature and a certain fluctuation range.
5. The method of claim 1, wherein: the irradiation time of the laser light source is 1s-600 s.
6. The method of claim 1, wherein: the laser is infrared laser.
7. The method of claim 1, wherein: the solar cell is an N-type solar cell.
8. The method of claim 7, wherein: the solar cell is an N-HIT, N-TOPCON, N-PEAL or N-PERT cell.
9. The method of claim 1, wherein: the steps of the method occur before preparing the electrodes for the solar cell sheet.
10. The method of claim 1, wherein: the method also comprises the following steps:
preheating the solar cell before irradiating the solar cell by using a laser light source; and after the interface defect repair is finished, cooling the solar cell.
11. An apparatus for implementing the method of repairing defects at an interface of a solar cell of claim 1, wherein: the equipment comprises a laser device, an objective table and a temperature control device; wherein the content of the first and second substances,
the objective table is used for placing the solar cell, the temperature control device is used for enabling the solar cell to be at a certain temperature, and the laser device is used for irradiating laser subjected to flat top shaping to the solar cell;
the laser device comprises a laser and a laser shaping device, the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a certain size to cover the surface of the solar cell.
12. The apparatus of claim 11, wherein: the laser shaping device is a diffraction optical device or an optical fiber laser homogenizer.
13. The apparatus according to claim 11 or 12, characterized in that: the equipment also comprises a feeding device used for feeding the object stage.
14. The apparatus according to claim 11 or 12, characterized in that: the equipment also comprises a blanking device used for blanking the objective table.
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