CN111756326A - Solar cell rapid light attenuation method and device - Google Patents
Solar cell rapid light attenuation method and device Download PDFInfo
- Publication number
- CN111756326A CN111756326A CN202010523969.2A CN202010523969A CN111756326A CN 111756326 A CN111756326 A CN 111756326A CN 202010523969 A CN202010523969 A CN 202010523969A CN 111756326 A CN111756326 A CN 111756326A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- laser
- light
- station
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 241001270131 Agaricus moelleri Species 0.000 claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 14
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 10
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 10
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000002238 attenuated effect Effects 0.000 description 7
- 229910052724 xenon Inorganic materials 0.000 description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001507 metal halide Inorganic materials 0.000 description 5
- 150000005309 metal halides Chemical class 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a method and equipment for quickly attenuating light of a solar cell, wherein the solar cell is irradiated by a laser light source at a certain temperature to realize quick attenuation of the light of the solar cell, and light spots emitted by the laser light source and irradiated on the solar cell are flat-top light spots and cover the solar cell. The invention uses a stable, high-light-intensity and long-life laser as a light source, thereby greatly reducing the light decay time of the solar cell and making it possible to quickly and timely reflect the light decay test result of the solar cell; meanwhile, the working efficiency is greatly improved, the electric energy consumption is reduced, the equipment maintenance cost is reduced, and the cost is saved.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a method and equipment for quickly attenuating light of a solar cell.
Background
The phenomenon of light decay of boron (B) -doped P-type single crystal silicon cells was previously discovered in 1973, and was found to be somewhat recoverable after the light decay. Jan Scht found that the light decay is mainly caused by the "B-O pair" and gives the structure of the defect. Axel Herguth proposed a "re-ecology" theory to explain the principle of power recovery and stability after initial light decay. The decay of P-type polysilicon cells, which is believed to be associated not only with the B-O pair but also with the metal impurities, is not significant in the recovery process due to the relatively low oxygen content.
The light decay caused by B-O can be recovered to a certain extent after a period of illumination, if the P-type monocrystalline silicon component runs for 2-3 months in the original outdoor environment, the P-type monocrystalline silicon component can undergo obvious attenuation and partial recovery processes, the first-year attenuation of a commercial product can be kept within 3%, and the first-year attenuation of the P-type polycrystalline component is generally guaranteed according to 2.5%.
Crystalline silicon solar cells (PERCs) containing double-layer passivation films on the front and back sides are commercially produced in large quantities; the average mass production conversion efficiency of the single crystal PERC battery is over 22.5 percent, so that the requirement of the crystalline silicon solar battery on the bulk material is increasingly strict, and the requirement is particularly expressed in the aspect of light-induced attenuation of the crystalline silicon solar battery. This decay typically occurs with carrier injection. Since the solar cell generates carriers by itself after being illuminated, the attenuation is also called as light attenuation (light decay). In the prior solar cell, the back surface is not subjected to surface passivation generally, and a silicon wafer is directly contacted with a metal electrode, so that the recombination rate of carriers is very high and is far greater than that of carriers brought by a boron-oxygen complex in the material. Therefore, the prior solar cell has light attenuation, but the light attenuation amplitude is not too large. Sunlight irradiation is simulated by a 5H xenon lamp under normal conditions (1 kW/m)2) The efficiency of the single crystal solar cell is about 2% relative to the light decay rate, and the polycrystal is smaller. However, after the front and back surfaces are passivated, the recombination rate on the surface of the battery is greatly reduced, so that the recombination rate in the silicon wafer body formed by the boron-oxygen complex becomes a main factor influencing the minority carrier lifetime of the material and the conversion efficiency of the battery. In general, PERC cells simulated solar irradiation (1 kW/m) via a 5H xenon lamp2) The efficiency attenuation ratio can reach 5% or even higher.
The light decay needs a process, and generally, when the total irradiation energy on the surface of the solar cell reaches 5 kW.h/m2In time, the efficiency of the battery may be deterioratedAnd is minimized. Therefore, the irradiation power of the conventional light attenuation furnace reaches 1kW/m under the irradiation of a metal halide lamp or a xenon lamp light source2When the surface temperature of the battery is controlled below 60 ℃, the total irradiation energy can reach 5 kW.h/m after the battery is irradiated for 5 hours2The requirements of (1).
In order to ensure the quality of the solar cell, the light attenuation rate is one of the indexes that must be frequently checked. However, each time of irradiation for several hours occupies a long time, and the timeliness of the detection result is difficult to realize; in addition, because the light of the metal halide lamp and the light of the xenon lamp are comparatively dispersed, the light irradiated on the surface of the solar cell is only a small part of the total irradiation of the light source, so a plurality of metal halide lamps or xenon lamp tubes are required to be simultaneously irradiated, and the irradiation power on the surface of the solar cell can reach 1kW/m2Therefore, the energy consumption of the conventional light attenuation furnace is very high. In addition, the service life of the metal halide lamp or xenon lamp light source is generally 2 months, the lamp tube needs to be replaced frequently, and the maintenance cost is high.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method and the device for quickly attenuating the light of the solar cell can greatly reduce the light attenuation time of the solar cell, quickly and timely reflect the light attenuation detection result of the solar cell and reduce the maintenance cost of the device.
The technical scheme adopted by the invention for solving the technical problems is as follows: a solar cell rapid light attenuation method is characterized in that: the method comprises the following steps:
the solar cell is irradiated by the laser light source at a certain temperature, so that the solar cell is subjected to rapid light attenuation, wherein a light spot irradiated on the solar cell by the laser light emitted by the laser light source is a flat-top light spot and covers the solar cell.
According to the method, the certain temperature is 50-300 ℃.
According to the method, the light intensity of the laser irradiated on the surface of the solar cell is more than or equal to 20kW/m2。
In the above method, the laser is an infrared laser.
According to the method, the solar cell is subjected to temperature control in the irradiation process of the laser light source, so that the solar cell is maintained in a certain fluctuation range above and below a certain temperature.
According to the method, the irradiation time of the laser light source is 10s-200 s.
The method for rapidly attenuating the light of the solar cell comprises the following steps.
S1, preheating the solar cell to reach the certain temperature;
s2, irradiating the preheated solar cell by adopting a laser light source at a certain temperature to enable the solar cell to perform rapid light attenuation, wherein a light spot irradiated on the solar cell by laser emitted by the laser light source is a flat-top light spot and covers the solar cell;
and S3, cooling the solar cell.
An apparatus for implementing the rapid light attenuation method of a solar cell is characterized in that: the equipment comprises a laser device, an objective table and a temperature control device; wherein,
the solar cell is placed on the objective table, the temperature control device is used for enabling the solar cell to be at a certain temperature, and the laser device is used for irradiating laser subjected to flat top shaping to the solar cell;
the laser device comprises a laser and a laser shaping device, wherein the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a proper size and covering the surface of the solar cell.
According to the equipment, the laser shaping device is a diffraction optical device or a fiber laser homogenizer.
According to the equipment, the device also comprises a feeding device which is used for placing the battery piece to be processed on the objective table.
The device also comprises a blanking device used for removing the processed solar cell slice from the objective table.
According to the equipment, the objective table comprises 3 stations, and the loading station, the laser irradiation station and the blanking station are sequentially arranged according to the processing sequence, and are used for respectively loading, irradiating and blanking the solar cell.
According to the equipment, the feeding station, the laser irradiation station and the blanking station are arranged along the circumferential direction and are rotated by 3 table tops through the rotating mechanism.
According to the equipment, the feeding station, the laser irradiation station and the blanking station are arranged along a straight line and are conveyed to the feeding station through the conveying belt.
According to the equipment, the device further comprises a preheating station arranged in front of the laser irradiation station, and a heating device is arranged on the preheating station and used for preheating the solar cell.
The invention has the beneficial effects that:
1. the stable, high-light-intensity and long-service-life laser is used as a light source, so that the light decay time of the solar cell is greatly reduced, and the rapid and timely reflection of the light decay test result of the solar cell becomes possible; meanwhile, the working efficiency is greatly improved, the electric energy consumption is reduced, the equipment maintenance cost is reduced, and the cost is saved.
2. When light attenuation is carried out, the solar cell is subjected to constant temperature control, so that overlarge temperature fluctuation of the cell can be prevented, and the stability of the light attenuation process effect is improved. Meanwhile, the activity of boron atoms and oxygen atoms in the solar cell can be activated, the diffusion rate is improved, the efficiency of the solar cell can be more quickly attenuated, and the total light intensity required by the light attenuation of the solar cell is effectively reduced (namely the total irradiation energy received by the surface of the solar cell is less than 5 kW.h/m)2Can also achieve the attenuation effect of a common light attenuation furnace).
3. The solar cell is preheated before light attenuation, so that the surface temperature of the solar cell can be prevented from being increased sharply and the cell structure can be prevented from being damaged due to laser irradiation.
Drawings
Fig. 1 is a schematic diagram of a light attenuation process according to an embodiment of the invention.
FIG. 2 is a flowchart of a method according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of the mechanism of the apparatus and a schematic diagram of the process of loading and unloading according to an embodiment of the present invention, wherein (a) is a top view angle of (b).
Fig. 4 is a schematic view of an apparatus structure and a schematic view of a loading and unloading process according to another embodiment of the present invention, wherein (a) is a top view angle of (b).
Fig. 5 is a schematic diagram of an apparatus structure and a loading and unloading process according to another embodiment of the present invention.
Fig. 6 is a schematic diagram of an apparatus structure and a loading and unloading process according to another embodiment of the present invention.
Fig. 7 is a schematic view of an apparatus structure and a schematic view of a loading and unloading process according to another embodiment of the present invention, wherein (a) is a top view angle of (b).
Fig. 8 is a graph comparing the efficiency attenuation effect after the light attenuation of the solar cell.
In the figure: the method comprises the following steps of 1-a solar cell, 2-an object stage, 3-a laser light source, 4-a loading station, 5-a preheating station, 6-a laser irradiation station, 7-a blanking station, 8-a loading device, 9-a blanking device, 10-a first station, 11-a second station, 12-a rotating motor, 13-a rotating arm and 14-a loading and blanking device.
Detailed Description
The invention is further illustrated by the following specific examples and figures.
The invention provides a rapid light attenuation method for a solar cell, and the solar cell can be a conventional BSF cell, an MWT cell, a PERC cell, a PERL cell, a PERT cell and the like.
As shown in fig. 1 and 2, the method comprises the following steps:
the solar cell 1 is irradiated by the laser light source 3 at a certain temperature, so that the solar cell 1 is subjected to rapid light attenuation, wherein a light spot of laser light emitted by the laser light source 3, which is irradiated on the solar cell 1, is a flat-top light spot and covers the surface (upper surface, namely) of the solar cell 1. The certain temperature is 50-300 deg.C, preferably 50-200 deg.C, and more preferably 80-150 deg.C. The light intensity of the surface of the solar cell 1 is more than or equal to 20kW/m2More preferably not less than 60kW/m2. The laser is infrared laser, the wavelength of the laser is preferably 800nm-1100nm, and lasers with other wavelengths, such as ultraviolet, green light, etc., can also be used. Light intensity = power/area, so after determining the light intensity, since the area of the solar cell is known, the power of the laser can be determined, approximatelyIs 500W-5000W. The irradiation time of the laser light source 3 is 10 to 200s, preferably 25 to 90 s. In the present embodiment, the solar cell 1 is provided on the stage 2. The laser spot can be round, square or irregular, as long as the irradiation area of the laser on the table top must cover the solar cell completely. The high-power laser is used for irradiating the surface of the solar cell, so that the surface of the solar cell is sufficiently irradiated, and the attenuation effect of a common light attenuation furnace for 5 hours can be achieved only in a very short time.
The invention takes high-power laser as the light attenuation light source of the solar cell, and the laser beam is gathered on the surface of the solar cell due to good laser directionality, so that the light intensity on the surface of the solar cell can be improved to 20kW/m2Even 60kW/m2Therefore, the total irradiation quantity required when the cell efficiency is attenuated to the minimum can be achieved in a short time, and the light attenuation time of the solar cell is greatly shortened; and laser stability is good, and long-lived, laser energy and illumination intensity can real time monitoring, need not basically carry out spare part and change, and the maintenance cost is low. In addition, because the energy of the laser beams is totally gathered on the surface of the solar cell, the energy waste is little, so the energy consumption of the rapid light attenuation of the laser is far lower than that of the traditional light attenuation furnace, and the energy-saving and environment-friendly effects are achieved. The time of laser rapid light decay is short, the contact time of the solar cell with air at high temperature is reduced, the oxidation of a metal electrode of the solar cell is prevented, and the solar cell is protected.
Since the solar cell is damaged by direct irradiation of the laser light due to high intensity of the laser light, the solar cell is first preheated. The solar cell is preheated, so that the activity of boron atoms and oxygen atoms in the solar cell can be activated, the diffusion rate is improved, the efficiency of the solar cell can be attenuated more quickly, and the total light intensity required by the light decay of the solar cell is effectively reduced (namely the total irradiation energy received by the surface of the solar cell is less than 5 kW.h/m)2Can also achieve the attenuation effect of a common light attenuation furnace).
In addition, during the irradiation process of the laser light source, the solar cell is subjected to temperature control, so that the solar cell is maintained within a certain fluctuation range above and below the certain temperature, namely after the solar cell is preheated to reach the certain temperature, the certain temperature is maintained at plus or minus 5 ℃, preferably plus or minus 1 ℃, and thus, the overlarge temperature fluctuation of the cell can be prevented, and the stability of the light attenuation process effect is improved.
Referring to fig. 2, the method preferably further comprises a pre-treatment step of pre-heating the solar cell 1 to a certain temperature. The certain temperature is 50-300 deg.C, preferably 50-200 deg.C, and more preferably 80-150 deg.C. The solar cell 1 is preheated from room temperature to said certain temperature very quickly, expected to reach 1-2 s.
Preferably, after the laser irradiation, a post-treatment step of cooling the cell piece is further included. The cooling can be natural cooling or air cooling or water cooling.
The invention also provides equipment for realizing the rapid light attenuation method of the solar cell, which comprises a laser device, an objective table and a temperature control device; the solar cell is placed on the objective table, the temperature control device is used for enabling the solar cell to be at a certain temperature, preferably, the certain temperature is maintained to be +/-5 ℃, preferably +/-1 ℃, and the laser device is used for irradiating laser subjected to flat top shaping to the solar cell; the laser device comprises a laser and a laser shaping device, wherein the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a proper size and covering the surface of the solar cell.
The laser may be a continuous or pulsed laser, with pulse widths of microseconds, nanoseconds, picoseconds or femtoseconds.
The laser can be an infrared, ultraviolet or green laser, and is preferably an infrared laser.
The laser shaping device is an optical diffraction device or an optical fiber laser homogenizer. When the emergent light of the laser is shaped and amplified, a light path can be designed according to actual requirements, so that the shape, the size and the energy distribution of light spots are controlled. The laser power can be monitored accurately in real time, and the method is fast and convenient, and the illumination intensity of a common light attenuation furnace is required to be tested for a long time after all light is turned on and the furnace door is closed.
The technical means for realizing laser beam shaping (beam shaper) is more, a Diffractive Optical Element (DOE) is one of the technical means, and a flat-Top light spot which has uniform energy distribution, a steep boundary and a specific shape and can be called as a flat-Top hat (Top-hat) light spot is obtained by modulating the phase of laser through a diffraction device. The spot shape may be circular, rectangular, square, rectilinear, elliptical or may be customized to the needs of the customer. After the laser beam passes through the flat-top beam shaper, the energy distribution of the light spot can be uniformly processed, and the effect of flat-top light is achieved.
The principle of the fiber laser homogenizer is as follows: the Gaussian light is incident at a certain divergence angle, passes through the fiber laser homogenizer and then outputs collimated flat-top laser.
Other shaping devices capable of realizing laser shaping only need to shape the light spot into a flat-topped light spot.
Those skilled in the art will appreciate that the laser apparatus may further comprise a collimating means disposed between the laser and the beam shaping device, and a focusing means disposed behind the shaping device.
Of course, other components, including beam expanding mirrors, reflecting mirrors, etc., may be added to optimize the optical path.
The temperature control device is a temperature control plate arranged on the objective table, and can also control the temperature by using a cavity arranged outside the objective table. The temperature control device can also be used for preheating the solar cell, controlling the temperature after preheating is finished, and finishing the laser irradiation step at a certain temperature.
Preferably, the device further comprises a feeding device for transferring the solar cell to the objective table, and the feeding device can be in a mode of feeding by a manipulator with a sucker.
Further preferably, the equipment further comprises a blanking device used for removing the solar cell from the objective table. The blanking device can be in the mode of a manipulator with a sucker and the like, and the sucker is preferably a metal sucker. And a water cooling or air cooling device is arranged on the metal sucker. So set up, can utilize metal sucking disc's heat conductivity to dispel the heat to solar cell at the in-process of unloading, adopt water-cooling or forced air cooling to assist in addition for can drop to the room temperature rapidly at the unloading in-process after the solar cell light decay.
The plurality of stations can be arranged on the station, and the laser irradiation, the feeding, the blanking and the like are divided into independent stations, so that when one solar cell is subjected to laser irradiation, the continuous production is realized in the feeding process of the next solar cell, and the whole time is saved.
As a station setting, as shown in fig. 3, the stage includes 3 stations, which are a loading station 4, a laser irradiation station 6, and a discharging station 7 according to a processing sequence, and the laser light source 3 is disposed above the laser irradiation station 6. The feeding station 4, the laser irradiation station 6 and the blanking station 7 are circumferentially arranged and are rotationally reached by 3 table tops through a rotating mechanism. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
Preferably, a preheating station 5 separately provided between the loading station and the irradiation station may be further included to perform preheating.
As a station arrangement, as shown in fig. 4, the objective table includes 4 stations, which are a feeding station 4, a preheating station 5, a laser irradiation station 6 and a blanking station 7 in sequence according to the processing sequence; the laser light source 3 is disposed above the laser irradiation station 6. The feeding station 4, the preheating station 5, the laser irradiation station 6 and the blanking station 7 are circumferentially arranged and are rotated by 4 table tops through a rotating mechanism. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
As another station setting, as an optimization scheme of the first station setting, the feeding station and the discharging station can be the same station.
As another station, as shown in fig. 5, the objective table includes 3 stations, which are a feeding station 4, a laser irradiation station 6 and a discharging station 7 in sequence; the feeding station 4, the laser irradiation station 6 and the blanking station 7 are arranged on a conveyor belt in sequence and are conveyed to reach through the conveyor belt. The feeding station 4 corresponds to a feeding device 8, and the blanking station 7 corresponds to a blanking device 9.
As another station, as shown in fig. 6, the objective table includes 4 stations, which are a feeding station 4, a preheating station 5, a laser irradiation station 6, and a discharging station 7 in sequence according to the processing sequence; the feeding station 4, the preheating station 5, the laser irradiation station 6 and the blanking station 7 are sequentially arranged on a conveyor belt and are conveyed to the feeding station through the conveyor belt.
As another station arrangement, as shown in fig. 7, the stage includes 2 stations, wherein the second station 11 is used for loading and unloading, and the first station 10 is used for laser irradiation and is reached by 2 tables through rotation of the rotating mechanism. The rotating mechanism comprises a rotating motor 12 in the middle and rotating arms 13 arranged on two sides of the rotating motor, and the two rotating arms 13 are respectively connected with the two table tops. With this arrangement, the loading and unloading device 14 is an integrated structure and can be a same suction cup.
Example 1
The present example takes a single crystal PERC solar cell as an example, and the size is 156.75mm × 156.75 mm.
A solar cell rapid light attenuation method taking laser as a light source is carried out according to the following method:
at 50 ℃, carrying out laser irradiation on the surface of the solar cell, wherein the laser is an infrared continuous laser with the wavelength of 808nm and the light intensity of 20kw/m2The irradiation time is 200s, the laser spot is 160mm × 160mm square spot, the laser spot covers the surface of the cell slice, the laser energy is uniformly distributed in the spot, the high-power laser irradiates the preheated solar cell, the combination of boron atoms and oxygen atoms can be accelerated to form a boron-oxygen complex, a minority carrier recombination center is formed, the photoinduced attenuation is caused, and the average efficiency attenuation is 1.67%.
Example 2
The present example takes a single crystal PERC solar cell as an example, and the size is 156.75mm × 156.75 mm.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 80 ℃, and the light intensity is 40 kw/m2The wavelength of the laser is 980nm, the spot size is 160mm, × 160mm and the irradiation time is 90s, and the average efficiency is attenuated by 1.55%.
Example 3
The present example takes a single crystal PERC solar cell as an example, and the size is 156.75mm × 156.75 mm.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 110 ℃, and the light intensity is 60kw/m2The wavelength of the laser is 1030nm, the spot size is 160mm, × 160mm and the average efficiency is reduced by 1.64 percent, and the irradiation time is 55 s.
Example 4
The present example takes a single crystal PERC solar cell as an example, and the size is 158.75mm × 158.75 mm.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 150 ℃, and the light intensity is 100 kw/m2The wavelength of the laser is 1064nm, the spot size is 160mm, × 160mm and the average efficiency is attenuated by 1.63 percent, namely a square spot with the spot size of 160mm and the irradiation time of 32 s.
Example 5
The present example takes a single crystal PERC solar cell as an example, and the size is 158.75mm × 158.75 mm.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 200 ℃, and the light intensity is 200 kw/m2The wavelength of the laser is 1080nm, the spot size is 160mm, × 160mm and the average efficiency is attenuated by 1.83 percent, and the irradiation time is 15 s.
Example 6
The present example takes a single crystal PERC solar cell as an example, and the size is 158.75mm × 158.75 mm.
The method of the embodiment is the same as the embodiment 1, and the specific parameters are as follows: the temperature is 300 ℃, and the light intensity is 300 kw/m2The wavelength of the laser is 1080nm, the spot size is 160mm, × 160mm and the irradiation time is 10s, and the average efficiency is attenuated by 1.72%.
Example 7
This embodiment is similar to embodiment 5, except that it further includes a preheating and cooling step, specifically, a method for rapid light decay of a solar cell using laser as a light source, which is performed as follows:
1. preheating the solar cell for 10s (the time required for heating to the preheating temperature is short, about 1-2s, most of the time is to enter a laser irradiation station after the laser irradiation station finishes irradiation at a constant temperature of the preheating station, so that the preheating time is the same as the irradiation time, and when the preheating station and the processing station are the same, the preheating time is 1-2s, the same effect can be realized), so that the temperature of the solar cell reaches 20 ℃; the step can be used for placing the sorted solar cells on a constant-temperature heating table for preheating after the solar cells are sorted. The solar cell is preheated before light decay by preheating the solar cell, so that the surface temperature of the solar cell can be prevented from being rapidly increased and the cell structure can be prevented from being damaged due to laser irradiation.
2. The surface of the solar cell is irradiated by laser at 200 ℃ and with the light intensity of 200 kw/m2The wavelength of the laser is 1080nm, the spot size is 160mm, × 160mm and the irradiation time is 10 s.
3. And cooling the battery piece.
The average efficiency of this example decays by 2.06%.
After preheating is added, the activity of boron atoms and oxygen atoms in the solar cell can be fully activated, the diffusion rate is improved, and the effect and the stability of laser rapid light decay are improved.
By using the laser rapid light attenuation method provided by the invention, the efficiency attenuation proportion of the solar cell is equivalent to that of a conventional light attenuation furnace in the industry for 5 hours. As shown in table 1, the average processing time of the laser rapid light attenuation single chip is 1 minute, which is much shorter than the processing time of a conventional light attenuation furnace by 15 minutes, so that the speed of light attenuation test is greatly increased, and a feasible solution is provided for timely monitoring of light attenuation; in addition, because the time of the rapid light decay of the laser is far shorter than that of a common light decay furnace, the cell is not easy to be oxidized, and the influence of other factors on the performance of the cell can be eliminated. In addition, the energy consumption and the equipment maintenance cost are far lower than those of a conventional light attenuation furnace by using the rapid light attenuation method, so that the production cost and the detection cost of the solar cell are greatly reduced.
By adopting the method of the invention (the laser intensity is 60kW/m2For example), the experimental results are as follows compared with the prior art metal halide lamp or xenon lamp light decay furnace:
the light attenuation proportion of the prior art and the method of the invention is 1.69 percent and 1.64 percent to 1.83 percent respectively;
the illumination time of the prior art and the method of the invention is 300min and about 1min respectively;
the number of light attenuation sheets in each time of the prior art and the method of the invention is respectively 20 and 1;
the average processing time of single chips in the prior art and the method of the invention is 15min and 1min respectively;
the productivity/day of the prior art and the method of the invention is respectively 96 pieces/day and 1440 pieces/day;
the number of the 5GW batteries required by the capacity of the prior art and the method of the invention is respectively 3 and 1;
the total energy consumption ratio of the prior art and the method of the invention is 19.8kW and 2.16 kW;
the total maintenance costs for the prior art and the inventive process were 25.5 ten thousand yuan/year and 6 ten thousand yuan/year, respectively.
Fig. 7 is a graph comparing the efficiency attenuation effect after the light attenuation of the solar cell. From data, the rapid light attenuation of the solar cell has no obvious difference from the efficiency attenuation distribution of the solar cell after light attenuation and a common light attenuation furnace, and the stability of the rapid light attenuation of the laser is normal. After the rapid laser light decay, the appearance of the solar cell is not obviously damaged, and no pollution or hidden crack is found in EL test.
The above embodiments are only used for illustrating the design idea and features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the content of the present invention and implement the present invention accordingly, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes and modifications made in accordance with the principles and concepts disclosed herein are intended to be included within the scope of the present invention.
Claims (11)
1. A solar cell rapid light attenuation method is characterized in that: the method comprises the following steps:
the solar cell is irradiated by the laser light source at a certain temperature, so that the solar cell is subjected to rapid light attenuation, wherein a light spot irradiated on the solar cell by the laser light emitted by the laser light source is a flat-top light spot and covers the surface of the solar cell.
2. The method for rapid light decay of a solar cell according to claim 1, wherein: the certain temperature is 50-300 ℃.
3. The method for rapid light decay of a solar cell according to claim 1, wherein: the light intensity of the laser irradiation on the surface of the solar cell is more than or equal to 20kW/m2。
4. The method for rapid light decay of a solar cell according to claim 1, wherein: the irradiation time of the laser light source is 10s-200 s.
5. The method for rapid light decay of a solar cell according to claim 1, wherein: the laser is infrared laser.
6. The method for rapid light decay of a solar cell according to claim 1, wherein: in the irradiation process of the laser light source, the solar cell is subjected to temperature control, so that the solar cell is maintained in a certain fluctuation range above and below a certain temperature.
7. The method for rapid light decay of a solar cell according to any one of claims 1 to 6, wherein: the method comprises the following steps:
s1, preheating the solar cell to reach the certain temperature;
s2, keeping the preheated solar cell at a certain temperature, and irradiating the solar cell by adopting a laser light source to enable the solar cell to perform rapid light attenuation, wherein a light spot irradiated on the solar cell by laser emitted by the laser light source is a flat-top light spot and covers the solar cell;
and S3, cooling the solar cell.
8. An apparatus for implementing the solar cell fast light attenuation method as claimed in claim 1, characterized in that: the equipment comprises a laser device, an objective table and a temperature control device; wherein,
the solar cell is placed on the objective table, the temperature control device is used for enabling the solar cell to be at a certain temperature, and the laser device is used for irradiating laser subjected to flat top shaping to the solar cell;
the laser device comprises a laser and a laser shaping device, the laser is used for emitting laser, and the laser shaping device is used for carrying out flat top shaping on the laser emitted by the laser to a certain size to cover the surface of the solar cell.
9. The apparatus of claim 8, wherein: the laser shaping device is an optical diffraction device or an optical fiber laser homogenizer.
10. The apparatus according to claim 8 or 9, characterized in that: the equipment also comprises a feeding device used for feeding the object stage.
11. The apparatus according to claim 8 or 9, characterized in that: the equipment also comprises a blanking device used for blanking the objective table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010523969.2A CN111756326A (en) | 2020-06-10 | 2020-06-10 | Solar cell rapid light attenuation method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010523969.2A CN111756326A (en) | 2020-06-10 | 2020-06-10 | Solar cell rapid light attenuation method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111756326A true CN111756326A (en) | 2020-10-09 |
Family
ID=72674727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010523969.2A Pending CN111756326A (en) | 2020-06-10 | 2020-06-10 | Solar cell rapid light attenuation method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111756326A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
| CN113571605A (en) * | 2021-07-20 | 2021-10-29 | 泰州中来光电科技有限公司 | Method for eliminating hydrogen-induced attenuation of passivated contact solar cell and application |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| CN105261677A (en) * | 2015-11-18 | 2016-01-20 | 浙江晶科能源有限公司 | Method for rapid light-induced degradation of solar cell piece |
| JP2018038184A (en) * | 2016-08-31 | 2018-03-08 | 国立研究開発法人産業技術総合研究所 | Evaluation method and evaluation device for solar battery and evaluation program for solar battery |
| CN209471986U (en) * | 2019-03-12 | 2019-10-08 | 保定光为绿色能源科技有限公司 | The anti-light equipment that declines of multi-wave band laser |
| CN110993741A (en) * | 2019-12-20 | 2020-04-10 | 武汉帝尔激光科技股份有限公司 | Multi-pulse homogenization laser solar cell processing method and equipment |
-
2020
- 2020-06-10 CN CN202010523969.2A patent/CN111756326A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| CN105261677A (en) * | 2015-11-18 | 2016-01-20 | 浙江晶科能源有限公司 | Method for rapid light-induced degradation of solar cell piece |
| JP2018038184A (en) * | 2016-08-31 | 2018-03-08 | 国立研究開発法人産業技術総合研究所 | Evaluation method and evaluation device for solar battery and evaluation program for solar battery |
| CN209471986U (en) * | 2019-03-12 | 2019-10-08 | 保定光为绿色能源科技有限公司 | The anti-light equipment that declines of multi-wave band laser |
| CN110993741A (en) * | 2019-12-20 | 2020-04-10 | 武汉帝尔激光科技股份有限公司 | Multi-pulse homogenization laser solar cell processing method and equipment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
| CN113571605A (en) * | 2021-07-20 | 2021-10-29 | 泰州中来光电科技有限公司 | Method for eliminating hydrogen-induced attenuation of passivated contact solar cell and application |
| CN113571605B (en) * | 2021-07-20 | 2023-12-29 | 泰州中来光电科技有限公司 | Method for eliminating hydrogen-induced attenuation of passivation contact solar cell and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20170288085A1 (en) | Apparatus For Reduction of Solar Cell LID | |
| US8778720B2 (en) | Laser firing apparatus for high efficiency solar cell and fabrication method thereof | |
| CN111756326A (en) | Solar cell rapid light attenuation method and device | |
| US20100147383A1 (en) | Method and apparatus for laser-processing a semiconductor photovoltaic apparatus | |
| US9214585B2 (en) | Annealing for damage free laser processing for high efficiency solar cells | |
| CN112466983A (en) | Method and equipment for repairing solar cell interface defects | |
| CN111162143A (en) | High-efficiency PERC solar cell and preparation method thereof | |
| JP2002064108A (en) | Compound semiconductor film forming device | |
| CN204558429U (en) | A kind of device reducing photo attenuation | |
| JP5305431B2 (en) | Impurity introduction method for semiconductors used in photovoltaic power generation | |
| CN114597290A (en) | Preparation method of heterojunction solar cell | |
| JP2013519224A (en) | Method and apparatus for heat treating a disk-shaped substrate material of a solar cell, in particular a crystalline or polycrystalline silicon solar cell | |
| KR20100032161A (en) | Method and apparatue for manufacturing of solar cell | |
| CN210092114U (en) | Solar cell electrode preparation or poor contact repair equipment | |
| CN212676292U (en) | Solar cell processing equipment | |
| KR101912772B1 (en) | Apparatus and method for producing photovoltaic element | |
| CN108140691B (en) | Method and device for stabilizing photovoltaic silicon solar cells | |
| CN113594300B (en) | Laser scribing method for light-transmitting power generation glass | |
| US8850852B2 (en) | Edge processing of photovoltaic substrates | |
| CN109728109B (en) | Crystalline silicon double-sided battery and heat treatment method thereof | |
| TWI623041B (en) | Method and apparatus for processing workpieces | |
| JP5260373B2 (en) | Method for manufacturing thin film solar cell | |
| CN118448506A (en) | Preparation method and equipment of TOPCon battery | |
| WO2014179366A1 (en) | Annealing for damage free laser processing for high efficiency solar cells | |
| JP2022520462A (en) | How to increase the strength of the glass substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No. 142, Chunhui East Road, Xishan Economic and Technological Development Zone, Wuxi, Jiangsu 214000 Applicant after: Dier Laser Technology (Wuxi) Co.,Ltd. Address before: 2 Fengwei Road, Xishan Economic and Technological Development Zone, Xishan District, Wuxi City, Jiangsu Province Applicant before: Dier Laser Technology (Wuxi) Co.,Ltd. |