CN105449044A - Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell - Google Patents
Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell Download PDFInfo
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- CN105449044A CN105449044A CN201511020688.0A CN201511020688A CN105449044A CN 105449044 A CN105449044 A CN 105449044A CN 201511020688 A CN201511020688 A CN 201511020688A CN 105449044 A CN105449044 A CN 105449044A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 238000002161 passivation Methods 0.000 title claims abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000001257 hydrogen Substances 0.000 title claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 19
- 230000007547 defect Effects 0.000 title claims abstract description 15
- 230000008439 repair process Effects 0.000 title abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000011324 bead Substances 0.000 claims description 34
- 238000005057 refrigeration Methods 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000004020 luminiscence type Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a photo-induced hydrogen passivation and defect repair device for an LED (Light Emitting Diode) silicon solar cell. The device comprises a test bed for placing the silicon solar cell and keeping the temperature constant, and further comprises an LED light source system, an optical convergence system and a controller, wherein the LED light source system comprises an LED array for emitting light; the optical convergence system is arranged on a light emitting path of the LED array, and is used for converging the light emitted by the LED array to a detection area of the test bed; and the controller is used for modifying the parameters of the light emitted by the LED array as well as analyzing and calculating the passivation and defect parameters of the silicon solar cell. The device improves the conversion efficiency of the solar cell by passivating impurity defects in crystalline silicon, passivating a silicon material and repairing lattice defects such as dislocation in a polycrystalline silicon material.
Description
Technical field
The present invention relates to the hydrogen passivating technique of silicon solar cell, be specifically related to a kind of LED silicon solar cell photoinduction hydrogen passivation and bug repairing apparatus.
Background technology
In silicon solar cell preparation technology, silicon chip surface can deposit one deck silicon nitride film as optics anti-reflection layer and surface passivation layer.Conventional thin film deposition mode is PECVD method.Utilize the method, in silicon nitride film and in the nearly surperficial certain thickness of silicon chip, can a large amount of hydrogen atoms or hydrogen ion be contained.These hydrogen have very strong reactivity, can react with the various defects in the impurity in silicon materials and silicon crystal lattice, thus produce passivation effect, are conducive to the lifting of photoelectric conversion efficiency of the solar battery.
For the hydrogen in silicon materials, according to its state of charge, there are three kinds of forms, is H respectively
+, H
0and H
-.Under thermal equilibrium condition, in P-type silicon, majority carrier is hole, positively charged, therefore now H
-concentration very low, H
+occupy the majority; Think anti-H in N-type silicon
-then occupy the majority; And H
0concentration in both is all not high.
In the manufacturing process of crystalline silicon, cannot avoid introducing a small amount of impurity, as Fe
i +, Cr
i +; P is there is in the silicon of N-type doping
+; B is there is in the silicon of P type doping
-or Ga
-; In even boron-doping P-type silicon, through the B-O that illumination generates
+complex etc.These impurity or defect all can have a strong impact on the performance of solar cell.
Summary of the invention
The invention discloses a kind of LED silicon solar cell photoinduction hydrogen passivation and bug repairing apparatus.
Technical scheme of the present invention is as follows:
A kind of LED silicon solar cell photoinduction hydrogen passivation and bug repairing apparatus, comprising the monitor station of the temperature remained constant for placing silicon solar cell, also comprising:
A LED light source system, comprises the LED array for emitting beam;
An optical collection system, arrange in the luminous light path of described LED array, the light collection sent by LED array is to the surveyed area on monitor station;
A controller, in order to revise the parameter of LED array institute isolychn, and carries out analytic operation to the passivation of silicon solar cell and defect parameters.
Its further technical scheme is: described optical collection system comprises multiple lens and reflecting system; LED array comprises multiple LED lamp bead, and described lens one_to_one corresponding is arranged on LED lamp bead front end; LED array institute isolychn passes lens lighting to the surveyed area on monitor station; Described reflecting system comprises that arrange around monitor station surrounding, that reflecting surface is inside speculum.
Its further technical scheme is: also comprise diffusing glass, and described diffusing glass is installed between LED array and monitor station.
Its further technical scheme is: the highest irradiation intensity that described LED array arrives the light of monitor station is the irradiation intensity uniformity being not less than the standard sun condition of ten times and the light of arrival monitor station; Described standard sun condition is that photon Radar system meets AM1.5; When forming LED array by the LED lamp bead of more than one luminescence band, the LED lamp bead symmetric arrays of different luminescence band.
Its further technical scheme is: described LED light source system also comprises light intensity correction system, regulates the light intensity of the surveyed area arrived on monitor station, to reach required irradiation intensity.
Its further technical scheme is: described controller comprises connection keyboard on the controller and liquid crystal display.
Its further technical scheme is: also comprise heat abstractor, and described heat abstractor comprises water-cooling system and air cooling system; Described water-cooling system comprises the first refrigeration machine, tank, water pump and heating panel; Described heating panel is arranged on the upper surface of LED array; The delivery port connection water channel of described first refrigeration machine, to the heat transmission water refrigeration cool-down in tank; Heat transmission hydraulic pressure in tank is entered the water inlet of heating panel by described water pump; The water inlet blowing mouth of a river connection refrigeration machine of described heating panel, heat transmission water-band is walked the heat of LED array and is flowed back to refrigeration machine; Described air cooling system comprises the second refrigeration machine and blower fan; The cold air of the second refrigeration machine manufacture is blowed to the lower surface of LED array by described blower fan.
Its further technical scheme is: described LED light source system also comprises driving power; Described driving power comprises bleeder circuit, step-down type dc power conversion chip, operational amplifier, Schottky diode and filter coil; The model of described step-down type dc power conversion chip is XL4005; The inverting input of the voltage output end concatenation operation amplifier of described bleeder circuit; The output of operational amplifier connects the second port of step-down type dc power conversion chip, and the positive power source terminal of described operational amplifier connects the five-port of step-down type dc power conversion chip, the negative power end ground connection of operational amplifier; The plus earth of Schottky diode, negative pole connects the 3rd port of step-down type dc power conversion chip; First port ground connection of step-down type dc power conversion chip; The first end of described filter coil connects the 3rd port of step-down type dc power conversion chip, and the second end is the positive output end for drive circuit, and the in-phase input end of operational amplifier is as the negative output terminal of drive circuit;
Multiple LED lamp bead series connection is LED lamp bead string; Multiple LED lamp bead connection in series-parallel is between the positive output end and negative output terminal of drive circuit.
Its further technical scheme is: comprise and organize driving power more, often organizes its output current of driving power controllable, and then regulates the luminous intensity of the LED lamp bead string connected thereon.
Its further technical scheme is: also comprise constant temperature system, is connected on monitor station, is 300 degrees Celsius in order to keep the temperature of solar cell piece.
Advantageous Effects of the present invention is:
The present invention is by the combination of LED array light source at 404nm or 940nm or multiple wave band, produce and be the highlyest not less than ten standard solar irradiation photon Radar system (described standard solar irradiation photon Radar system is for meeting AM1.5 condition), illumination is used to penetrate the method injecting charge carrier, in P-type silicon, a large amount of injected minority carrier (electronics), makes H
-concentration raise, thus passivation Fe
i +, Cr
i +deng impurity; Utilize the H of existence simultaneously
+depassivation B
-or Ga
-etc. defect, thus reduce the compound of charge carrier at this little fault location, promote the performance of solar cell.For the boron-doping P-type silicon solar cell after photo attenuation, can use and the invention enables H
-concentration raise, utilize H
-depassivation B-O
+complex, thus the photoelectric conversion efficiency of silicon solar cell is restored.The present invention not only can impurity defect in passivation crystalline silicon, also can passivation silicon materials, repairs the lattice defects such as polycrystalline silicon material Dislocations, promotes solar cell conversion efficiency.
Make silicon chip inside produce a large amount of non equilibrium carrier, change the inner H of silicon chip thus
+and H
-concentration and strengthen their transfer ability, simultaneously can impurity defect in passivation crystalline silicon, also can the lattice defect such as passivation silicon materials, particularly polycrystalline silicon material Dislocations, promote the conversion efficiency of silicon solar cell.
Relative to LASER Light Source have the high and irradiated area of cost be difficult to accomplish the shortcomings such as business silicon solar cell size, the present invention with Sony ericsson mobile comm ab LED for light source, more stable, cheap, the long-life, waveband selection is flexible, reduces equipment manufacturing cost and maintenance cost.
Present invention employs high efficiency and the radiating mode of cheapness dispels the heat to LED light source, produced heat can be dissipated rapidly in a short period of time, to ensure the reliability service of whole device.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the schematic diagram of LED array.
Fig. 3 is the index path in light path collecting system.
Fig. 4 is the schematic diagram of water-cooling system.
Fig. 5 is the schematic diagram of air cooling system.
Fig. 6 is the circuit structure diagram of the driving power of LED array.
Embodiment
Fig. 1 is structural representation of the present invention.The present invention includes the monitor station for placing silicon solar cell, the temperature remained constant of monitor station.Also comprise:
A LED light source system, comprises the LED array for emitting beam; The wavelength of light that LED array sends is 404nm, 940nm or other wavelength;
An optical collection system, be arranged in the luminous light path of LED array, the light collection sent by LED array is to the surveyed area on monitor station;
A controller, in order to revise the parameter values such as the temperature and humidity of whole device, can control the offset of the irradiation intensity of LED array institute isolychn simultaneously, and carries out analytic operation to supplemental characteristics such as the passivation of detected silicon solar cell and defects.Controller is also connected with keyboard and LCDs.Keyboard, for inputting instruction, by operation keyboard, changes light intensity by the drive current or voltage changing LED lamp bead in LED array.And by operation keyboard, the operating state of whole device can be controlled, the control that the switch of implement device or testing result export.After to the data analysis computing detected, result can be delivered in liquid crystal display and show.
The present invention also comprises water-cooling system and air cooling system, plays the effect into LED light source system radiating.
Fig. 2 is LED array schematic diagram.LED array comprises multiple LED lamp bead, the arrangement that LED lamp bead interval is compact, and the LED lamp bead spacing distance that arrangement position is even and adjacent is equal.When forming LED array by the LED lamp bead of more than one luminescence band, the LED lamp bead arrangement position of different luminescence band is symmetrical, so that at surveyed area, namely on radiating surface, reaches the irradiation that each luminescence band even intensity is consistent.In the present embodiment, have the LED lamp bead of 6 kinds of luminescence band, the LED lamp bead of identical label represents it and has identical luminescence band.The LED lamp bead of 6 kinds of luminescence band is centrosymmetric arrangement as shown in Figure 2.
LED array also needs the condition met to be, the highest photon Radar system that LED array arrives the light of monitor station is be not less than the standard sun condition of ten times.Described standard sun condition is that photon Radar system meets AM1.5 condition.
Fig. 3 is the index path of light path collecting system.Optical collection system comprises multiple lens and reflecting system; LED array comprises multiple LED lamp bead, and lens one_to_one corresponding is arranged on LED lamp bead front end.LED array institute isolychn passes lens lighting to the surveyed area on monitor station.Reflecting system comprises that arrange around monitor station surrounding, that reflecting surface is inside speculum, and the high angle scattered light in order to be sent by LED array reflexes to the surveyed area on monitor station.
Due to the directivity of LED luminescence, comparatively traditional gas light source is well a lot, and lighting angle is less, therefore in order to reach on irradiation face all and irradiation, also need to add diffusing glass, as shown in Figure 3, diffusing glass is installed between LED array and monitor station, to be broken up by the light of orientation.
Fig. 4 is the schematic diagram of water-cooling system.Water-cooling system comprises the first refrigeration machine, tank, water pump and heating panel.Heating panel is arranged on the upper surface of LED array.The delivery port connection water channel of the first refrigeration machine, to the heat transmission water refrigeration cool-down in tank, heat transmission hydraulic pressure in tank is entered the water inlet of heating panel by water pump, and the delivery port of heating panel connects the water inlet of refrigeration machine, and heat transmission water-band is walked the heat of LED array and flowed back to refrigeration machine.
Fig. 5 is the schematic diagram of air cooling system.Air cooling system comprises the second refrigeration machine and blower fan.The cold air of the second refrigeration machine manufacture is blowed to LED array lower surface so that heat LED array work distributed fast takes away rapidly on the downside of LED array by blower fan.
Fig. 6 is the schematic diagram of the driving power of LED array.Driving power comprises bleeder circuit, step-down type dc power conversion chip IC 1, operational amplifier IC2, Schottky diode D2 and filter coil L1.
The model of step-down type dc power conversion chip IC 1 is XL4005.
Bleeder circuit comprises the first resistance R1 and the second resistance R2 of series connection, and one end of this series circuit connects voltage source V size, other end ground connection.The common port of the first resistance R1 and the second resistance R2 is voltage output end, the inverting input of voltage output end concatenation operation amplifier IC2.In the present embodiment, the first resistance R1 stops the prevention for 20k Ω, the second resistance R2 to be 1k Ω.
The output of operational amplifier IC2 connects the second port FB of step-down type dc power conversion chip IC 1, and the positive power source terminal of operational amplifier IC2 connects the five-port VIN of step-down type dc power conversion chip IC 1, the negative power end ground connection of operational amplifier IC2.
The plus earth of Schottky diode D2, negative pole connects the 3rd port SW of step-down type dc power conversion chip IC 1.First port GN ground connection of step-down type dc power conversion chip IC 1.In the present embodiment, the model of Schottky diode D2 is SK54.
The first end of filter coil L1 connects the 3rd port SW of step-down type dc power conversion chip IC 1, and the second end is the positive output end for drive circuit, and the in-phase input end of operational amplifier IC2 is as the negative output terminal of drive circuit.In the present embodiment, the model of filter coil L1 is 47 μ H/5A.
Drive circuit also comprises multiple auxiliary electric capacity, plays the effect of filtering, voltage stabilizing.First electric capacity C1 and the 3rd electric capacity C3 is in parallel, and this parallel circuits one end is connected to the five-port VIN of step-down type dc power conversion chip IC 1, other end ground connection.Second electric capacity C2 and the 4th electric capacity C4 is in parallel, and this parallel circuits one end connects the positive output end of drive circuit, other end ground connection.5th electric capacity two ends are connected to the output of operational amplifier IC2 and the inverting input of operational amplifier IC2, form a feedback loop, make Circuits System more stable.In the present embodiment, the first electric capacity C1 is 150 μ F, and the 3rd electric capacity C3 is 470 μ F, and the second electric capacity C1 is 150 μ F, and the 4th electric capacity C3 is 470 μ F, and the 5th electric capacity is 0.1 μ F.
Multiple LED lamp bead series connection is LED lamp bead string; Multiple LED lamp bead connection in series-parallel is between the positive output end and negative output terminal of drive circuit.In the present embodiment, the LED lamp bead string of 2 tunnel parallel connections is accessed in each drive circuit.Every paths of LEDs lamp pearl string is in series by 11 LED lamp bead.
The present invention can carry out light intensity correction, regulates the light intensity of the surveyed area arrived on monitor station, to reach required irradiation intensity.Regulate the method for light intensity to arrange in LED light source system exactly and organize driving power more, often organize driving power can to the LED lamp bead that drives by its control separately, then by the output voltage of each driving power of adjustment, change the current value of LED lamp bead, thus make the irradiation intensity that light intensity reaches required.
In actual use procedure, to the solar cell be passivated or solar module be placed on the monitor station of temperature remained constant, in the present embodiment, the temperature keeping monitor station is 300 degrees Celsius, the illumination that LED array sends is mapped on solar cell, solar cell is passivated, with the various parameter values that the liquid crystal display that Time Controller connects can show solar cell.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above embodiment.Be appreciated that the oher improvements and changes that those skilled in the art directly derive without departing from the spirit and concept in the present invention or associate, all should think and be included within protection scope of the present invention.
Claims (10)
1. LED silicon solar cell photoinduction hydrogen passivation and a bug repairing apparatus, is characterized in that: the monitor station comprising the temperature remained constant for placing silicon solar cell, also comprises:
A LED light source system, comprises the LED array for emitting beam;
An optical collection system, arrange in the luminous light path of described LED array, the light collection sent by LED array is to the surveyed area on monitor station;
A controller, in order to revise the parameter of LED array institute isolychn, and carries out analytic operation to the passivation of silicon solar cell and defect parameters.
2. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: described optical collection system comprises multiple lens and reflecting system; LED array comprises multiple LED lamp bead, and described lens one_to_one corresponding is arranged on LED lamp bead front end; LED array institute isolychn passes lens lighting to the surveyed area on monitor station; Described reflecting system comprises that arrange around monitor station surrounding, that reflecting surface is inside speculum.
3. LED silicon solar cell photoinduction hydrogen passivation according to claim 2 and bug repairing apparatus, it is characterized in that: also comprise diffusing glass, described diffusing glass is installed between LED array and monitor station.
4. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: the highest irradiation intensity that described LED array arrives the light of monitor station is the irradiation intensity uniformity being not less than the standard sun condition of ten times and the light of arrival monitor station; Described standard sun condition is that photon Radar system meets AM1.5; When forming LED array by the LED lamp bead of more than one luminescence band, the LED lamp bead symmetric arrays of different luminescence band.
5. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, it is characterized in that: described LED light source system also comprises light intensity correction system, the light intensity of the surveyed area arrived on monitor station is regulated, to reach required irradiation intensity.
6. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: described controller comprises connection keyboard on the controller and liquid crystal display.
7. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, it is characterized in that: also comprise heat abstractor, described heat abstractor comprises water-cooling system and air cooling system; Described water-cooling system comprises the first refrigeration machine, tank, water pump and heating panel; Described heating panel is arranged on the upper surface of LED array; The delivery port connection water channel of described first refrigeration machine, to the heat transmission water refrigeration cool-down in tank; Heat transmission hydraulic pressure in tank is entered the water inlet of heating panel by described water pump; The water inlet blowing mouth of a river connection refrigeration machine of described heating panel, heat transmission water-band is walked the heat of LED array and is flowed back to refrigeration machine; Described air cooling system comprises the second refrigeration machine and blower fan; The cold air of the second refrigeration machine manufacture is blowed to the lower surface of LED array by described blower fan.
8. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: described LED light source system also comprises driving power; Described driving power comprises bleeder circuit, step-down type dc power conversion chip (IC1), operational amplifier (IC2), Schottky diode (D2) and filter coil (L1); The model of described step-down type dc power conversion chip (IC1) is XL4005; The inverting input of the voltage output end concatenation operation amplifier (IC2) of described bleeder circuit; The output of operational amplifier (IC2) connects second port (FB) of step-down type dc power conversion chip (IC1), the positive power source terminal of described operational amplifier (IC2) connects the five-port (VIN) of step-down type dc power conversion chip (IC1), the negative power end ground connection of operational amplifier (IC2); The plus earth of Schottky diode (D2), negative pole connects the 3rd port (SW) of step-down type dc power conversion chip (IC1); First port (GN) ground connection of step-down type dc power conversion chip (IC1); The first end of described filter coil (L1) connects the 3rd port (SW) of step-down type dc power conversion chip (IC1), the positive output end that second end is drive circuit, the in-phase input end of operational amplifier (IC2) is as the negative output terminal of drive circuit;
Multiple LED lamp bead series connection is LED lamp bead string; Multiple LED lamp bead connection in series-parallel is between the positive output end and negative output terminal of drive circuit.
9. LED silicon solar cell photoinduction hydrogen passivation according to claim 8 and bug repairing apparatus, is characterized in that: comprise and organize driving power more, often organizes its output current of driving power controllable, and then regulate the luminous intensity of the LED lamp bead string connected thereon.
10. LED silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: also comprise constant temperature system, be connected on monitor station, is 300 degrees Celsius in order to keep the temperature of solar cell piece.
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|---|---|---|---|
| CN201511020688.0A CN105449044B (en) | 2015-12-30 | 2015-12-30 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
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|---|---|---|---|
| CN201511020688.0A CN105449044B (en) | 2015-12-30 | 2015-12-30 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204389A (en) * | 2017-06-21 | 2017-09-26 | 江南大学 | A kind of quick light decay device of silicon solar cell using LED as light source |
| CN107204742A (en) * | 2016-03-15 | 2017-09-26 | 南京黛傲光电科技有限公司 | A kind of silicon solar cell light decay device based on LED array light source |
| CN108598270A (en) * | 2018-06-12 | 2018-09-28 | 江南大学 | Using LED as the quick preparation device of the perovskite solar cell of light source |
| CN110102876A (en) * | 2019-04-30 | 2019-08-09 | 旻投电力发展有限公司 | A kind of cryogenic assembly recovery technique based on laser |
| WO2021004521A1 (en) * | 2019-07-11 | 2021-01-14 | 苏州迈正科技有限公司 | Heterojunction battery hydrogen passivation method and hydrogen passivation device, battery, battery assembly, and solar power station |
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
| CN114709294A (en) * | 2022-05-31 | 2022-07-05 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323434A (en) * | 2013-05-29 | 2013-09-25 | 浙江大学 | LED excited solar cell photoluminescence detection device |
| WO2014041260A1 (en) * | 2012-09-14 | 2014-03-20 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Device and method for restoring silicon-based photovoltaic solar cells |
-
2015
- 2015-12-30 CN CN201511020688.0A patent/CN105449044B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014041260A1 (en) * | 2012-09-14 | 2014-03-20 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Device and method for restoring silicon-based photovoltaic solar cells |
| CN103323434A (en) * | 2013-05-29 | 2013-09-25 | 浙江大学 | LED excited solar cell photoluminescence detection device |
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|---|---|---|---|---|
| CN107204742A (en) * | 2016-03-15 | 2017-09-26 | 南京黛傲光电科技有限公司 | A kind of silicon solar cell light decay device based on LED array light source |
| CN107204389A (en) * | 2017-06-21 | 2017-09-26 | 江南大学 | A kind of quick light decay device of silicon solar cell using LED as light source |
| CN108598270A (en) * | 2018-06-12 | 2018-09-28 | 江南大学 | Using LED as the quick preparation device of the perovskite solar cell of light source |
| CN110102876A (en) * | 2019-04-30 | 2019-08-09 | 旻投电力发展有限公司 | A kind of cryogenic assembly recovery technique based on laser |
| WO2021004521A1 (en) * | 2019-07-11 | 2021-01-14 | 苏州迈正科技有限公司 | Heterojunction battery hydrogen passivation method and hydrogen passivation device, battery, battery assembly, and solar power station |
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
| CN114709294A (en) * | 2022-05-31 | 2022-07-05 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN114709294B (en) * | 2022-05-31 | 2022-11-29 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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