CN107204742A - A kind of silicon solar cell light decay device based on LED array light source - Google Patents
A kind of silicon solar cell light decay device based on LED array light source Download PDFInfo
- Publication number
- CN107204742A CN107204742A CN201610144461.5A CN201610144461A CN107204742A CN 107204742 A CN107204742 A CN 107204742A CN 201610144461 A CN201610144461 A CN 201610144461A CN 107204742 A CN107204742 A CN 107204742A
- Authority
- CN
- China
- Prior art keywords
- led array
- solar cell
- light source
- led
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 239000011324 bead Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000005057 refrigeration Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 238000003491 array Methods 0.000 claims 1
- 238000007664 blowing Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 6
- 229910052724 xenon Inorganic materials 0.000 abstract description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
A kind of silicon solar cell light decay device based on LED array light source.The present invention relates to the light decay device of silicon solar cell, and in particular to a kind of silicon solar cell light decay stove based on LED array light source.In the manufacturing process of crystalline silicon, it is impossible to avoid introducing a small amount of impurity, such as Fei +、Cri +；There is P in the silicon of n-type doping+；There is B in the silicon of p-type doping-Or Ga-；Even in boron-doping P-type silicon, the B-O generated by illumination+Complex etc..These impurity or defect can have a strong impact on the performance of solar cell.It is this that phenomenon referred to as photo attenuation that is compound and causing efficiency of solar cell to decline is carried out to carrier because illumination nonequilibrium carrier injects the defect produced.For the light decay characteristic of test lot silion cell, cell piece or component can be all inspected by random samples in the producing line of photovoltaic cell and component, determine that the light decay data of cell piece or component is supplied to user on this basis.The light decay device that current industry is used all is using xenon lamp as light source.Relative to LED/light source, xenon lamp energy consumption is big, short life, maintenance cost are high, light intensity is non-adjustable, irradiation uniformity is poor.
Description
Technical field
The present invention relates to the light decay device of silicon solar cell, and in particular to a kind of silicon solar cell light decay stove based on LED array light source.
Background technology
In the manufacturing process of crystalline silicon, it is impossible to avoid introducing a small amount of impurity, such as Fei +、Cri +；There is P in the silicon of n-type doping+；There is B in the silicon of p-type doping-Or Ga-；Even in boron-doping P-type silicon, the B-O generated by illumination+Complex etc..These impurity or defect can have a strong impact on the performance of solar cell.It is this that phenomenon referred to as photo attenuation that is compound and causing efficiency of solar cell to decline is carried out to carrier because illumination nonequilibrium carrier injects the defect produced.For the light decay characteristic of test lot silion cell, cell piece or component can be all inspected by random samples in the producing line of photovoltaic cell and component, determine that the light decay data of cell piece or component is supplied to user on this basis.The light decay device that current industry is used all is using xenon lamp as light source.Relative to LED/light source, xenon lamp energy consumption is big, short life, maintenance cost are high, light intensity is non-adjustable, irradiation uniformity is poor.
The content of the invention
In view of the shortcomings of the prior art, the invention discloses a kind of silicon solar cell light decay device based on LED array light source.
The method have the benefit that：
Due to light decay phenomenon will be produced under the illumination of some strength when silion cell or component, therefore it is accomplished by grasping the light decay characteristic of batch silicon cell or component in industrial circle, so as to which light decay characteristic is informed into user.Current industry, which is used, uses xenon lamp（1 standard sun, AM1.5G）Cell piece is irradiated, required time is about 5 hours.The present invention, in the combination of 404nm or 940nm or multiple wave bands, is produced highest and is not less than ten standard solar irradiation photon Radar systems by LED array light source（The standard solar irradiation photon Radar system is to meet AM1.5 conditions）, because light intensity can be adjustable from the 0-15 sun, intensity is far longer than prior art, as long as therefore required time a few minutes.Greatly improve production efficiency.
Relative to xenon source, the present invention is using Sony ericsson mobile comm ab LED as light source, and more stable, the cheap, long-life, flexibly, irradiation intensity is adjustable, reduces equipment manufacturing cost and maintenance cost for waveband selection.
LED/light source is radiated present invention employs high efficiency and cheap radiating mode so that produced heat can be dissipated rapidly in a short period of time, to ensure the reliability service of whole device.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the schematic diagram of LED array.
Fig. 3 is the index path in light path collecting system.
Fig. 4 is the schematic diagram of water-cooling system.
Fig. 5 is the schematic diagram of air cooling system.
Fig. 6 is the circuit structure diagram of the driving power supply of LED array.
Embodiment
Fig. 1 is the structural representation of the present invention.The present invention includes the monitor station for being used to place silicon solar cell.Also include：
One LED/light source system, including the LED array for emitting beam；The wavelength of light that LED array is sent is the combination of 404nm, 940nm or other wavelength or several wavelength；
One optical collection system, is arranged in the luminous light path of LED array, the detection zone on the light collection that LED array is sent to monitor station；
One controller, the parameter value such as the temperature and humidity to change whole device, while the offset of the irradiation intensity of LED array institute isolychn can be controlled, and the supplemental characteristic such as the passivation to detected silicon solar cell and defect carries out analytic operation.Keyboard and LCDs are also associated with controller.Keyboard is used for input instruction, by operation keyboard, can change light intensity by changing the driving current or voltage of LED lamp bead in LED array.And by operation keyboard, the working condition of whole device can be controlled, the switch of device or the control of testing result output is realized.After the data to detecting carry out analytic operation, result can be delivered on liquid crystal display and shown.
Present invention additionally comprises water-cooling system and air cooling system, play a part of as LED/light source system radiating.
Fig. 2 is LED array schematic diagram.LED array includes multiple LED lamp beads, and the compact arrangement in LED lamp bead interval, the uniform and adjacent LED lamp bead spacing distance of arrangement position is equal.When the LED lamp bead of the luminescence band with more than one constitutes LED array, the LED lamp bead arrangement position of different luminescence bands is symmetrical, on detection zone, i.e. radiating surface, to reach the irradiation of each luminescence band even intensity unanimously.In the present embodiment, the LED lamp bead with 6 kinds of luminescence bands, the LED lamp bead of identical label, which represents it, has identical luminescence band.The LED lamp bead of 6 kinds of luminescence bands is centrosymmetric arrangement as shown in Figure 2.
LED array also needs the condition met to be that the highest photon Radar system that LED array reaches the light of monitor station is to be not less than ten times of standard sun condition.The standard sun condition is that photon Radar system meets AM1.5 conditions.
Fig. 3 is the index path of light path collecting system.Optical collection system includes multiple lens and reflecting system；LED array includes multiple LED lamp beads, and lens, which are corresponded, is arranged on LED lamp bead front end.LED array institute isolychn passes through the detection zone on lens lighting to monitor station.Reflecting system includes around the setting of monitor station surrounding, the speculum that reflection is inward-facing, the detection zone that the high angle scattered light LED array to be sent is reflexed on monitor station.
Because the directionality that LED lights is well many compared with traditional gas light source, lighting angle is smaller, therefore in order to reach the equal and irradiation on irradiation face, also need to add diffusing glass, as shown in figure 3, diffusing glass is installed between LED array and monitor station, so as to which the light of orientation is broken up.
Fig. 4 is the schematic diagram of water-cooling system.Water-cooling system includes the first refrigeration machine, tank, water pump and heat sink.Heat sink is arranged on the upper surface of LED array.The delivery port connection water channel of first refrigeration machine, to the heat transmission water refrigeration cool-down in tank, water pump enters the heat transmission hydraulic pressure in tank the water inlet of heat sink, and the delivery port of heat sink connects the water inlet of refrigeration machine, and heat transmission water takes away the heat of LED array and flows back to refrigeration machine.
Fig. 5 is the schematic diagram of air cooling system.Air cooling system includes the second refrigeration machine and blower fan.The cold air that second refrigeration machine is manufactured is blowed to LED array lower surface quickly to take away LED array the distributed heat that works on the downside of the LED array rapidly by blower fan.
Fig. 6 is the schematic diagram of the driving power supply of LED array.Driving power supply includes bleeder circuit, step-down type dc power conversion chip IC 1, operational amplifier IC2, Schottky diode D2 and filter coil L1.
The model XL4005 of step-down type dc power conversion chip IC 1.
Bleeder circuit includes the first resistor R1 and second resistance R2 of series connection, one end connection voltage source V sizes of this series circuit, other end ground connection.First resistor R1 and second resistance R2 common port are voltage output end, voltage output end concatenation operation amplifier IC2 inverting input.In the present embodiment, first resistor R1 prevents to be 20k Ω, and second resistance R2 prevention is 1k Ω.
The fifth port VIN of the second port FB of operational amplifier IC2 output end connection step-down type dc power conversion chip IC 1, operational amplifier IC2 positive power source terminal connection step-down type dc power conversion chip IC 1, operational amplifier IC2 negative power end ground connection.
Schottky diode D2 plus earth, the 3rd port SW of negative pole connection step-down type dc power conversion chip IC 1.The first port GN ground connection of step-down type dc power conversion chip IC 1.In the present embodiment, Schottky diode D2 model SK54.
3rd port SW of filter coil L1 first end connection step-down type dc power conversion chip IC 1, the second end is the positive output end of drive circuit, operational amplifier IC2 in-phase input end as drive circuit negative output terminal.In the present embodiment, the filter coil L1 μ H/5A of model 47.
Drive circuit also includes the electric capacity of multiple auxiliary, plays a part of filtering, voltage stabilizing.First electric capacity C1 and the 3rd electric capacity C3 is in parallel, and this parallel circuit one end is connected to the fifth port VIN of step-down type dc power conversion chip IC 1, other end ground connection.Second electric capacity C2 and the 4th electric capacity C4 is in parallel, and this parallel circuit one end connects the positive output end of drive circuit, other end ground connection.5th electric capacity two ends are connected to operational amplifier IC2 output end and operational amplifier IC2 inverting input, form a backfeed loop so that circuit system is more stablized.In the present embodiment, the first electric capacity C1 is that 150 μ F, the 3rd electric capacity C3 are 470 μ F, and the second electric capacity C1 is that 150 μ F, the 4th electric capacity C3 are 470 μ F, and the 5th electric capacity is 0.1 μ F.
Multiple LED lamp bead series connection are LED bead string；Multiple LED lamp bead connection in series-parallel are between the positive output end and negative output terminal of drive circuit.In the present embodiment, 2 tunnels LED bead string in parallel is accessed in each drive circuit.It is in series per paths of LEDs lamp bead string by 11 LED lamp beads.
The present invention can carry out light intensity correction, and the light intensity for reaching the detection zone on monitor station is adjusted, to reach required irradiation intensity.The method of regulation light intensity is exactly that multigroup driving power supply is set in LED/light source system, every group of driving power supply can be individually controlled the LED lamp bead driven by it, then by adjusting the output voltage of each driving power supply, change the current value of LED lamp bead, so that light intensity reaches required irradiation intensity.
In actual use, the solar cell being passivated or solar module are placed on monitor station, the illumination that LED array is sent is mapped on solar cell, and solar cell is passivated, while can show the various parameters value of solar cell on the liquid crystal display connected on controller.
Above-described is only the preferred embodiment of the present invention, and the invention is not restricted to above example.It is appreciated that the oher improvements and changes that those skilled in the art directly export or associated without departing from the spirit and concept in the present invention, are considered as being included within protection scope of the present invention
。
Claims (10)
1. a kind of silicon solar cell light decay device based on LED array light source, including for placing the monitor station of silicon solar cell, it is characterised in that also include：
One LED/light source system, including the LED array for emitting beam；In one optical collection system, the luminous light path that the LED array is set, the irradiation zone on the light collection that LED array is sent to silicon wafer bearing table；
One controller, the parameter to change LED array institute isolychn.
2. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：The optical collection system includes multiple lens and reflecting system；LED array includes multiple LED lamp beads, and the lens, which are corresponded, is arranged on LED lamp bead front end；LED array institute isolychn passes through the irradiation zone on lens lighting to silicon wafer bearing table；The reflecting system includes around the setting of the plummer surrounding, speculum that reflection is inward-facing.
3. the silicon solar cell light decay device according to claim 2 based on LED array light source, it is characterized in that：Also include diffusing glass, the diffusing glass is installed between LED array and plummer.
4. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：The LED array reaches the highest irradiation intensity of the light of silicon wafer bearing table from the irradiation intensity uniformity for the standard sun condition for being not less than ten times and the light for reaching plummer；The standard sun condition is that photon Radar system meets AM1.5；When constituting LED array with the LED lamp bead of more than one luminescence bands, the LED lamp bead symmetric arrays of different luminescence bands；Light intensity is adjustable.
5. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：The LED/light source system also includes light intensity correction system, and the light intensity for reaching the irradiation zone on plummer is adjusted, to reach required irradiation intensity.
6. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：The controller includes the keyboard and liquid crystal or nixie display of connection on the controller.
7. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：Also include heat abstractor, the heat abstractor includes water-cooling system and air cooling system；The water-cooling system includes the first refrigeration machine, tank, water pump and heat sink；The heat sink is arranged on the upper surface of LED array；The delivery port connection water channel of first refrigeration machine, to the heat transmission water refrigeration cool-down in tank；The water pump enters the heat transmission hydraulic pressure in tank the water inlet of heat sink；The water inlet for blowing mouth of a river connection refrigeration machine of the heat sink, heat transmission water takes away the heat of LED array and flows back to refrigeration machine；The air cooling system includes the second refrigeration machine and blower fan；The blower fan blows to the cold air that the second refrigeration machine is manufactured the lower surface of LED array.
8. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：The LED/light source system also includes driving power supply；The driving power supply includes bleeder circuit, step-down type dc power conversion chip（IC1）, operational amplifier（IC2）, Schottky diode（D2）And filter coil（L1）；The step-down type dc power conversion chip（IC1）Model XL4005；The voltage output end concatenation operation amplifier of the bleeder circuit（IC2）Inverting input；Operational amplifier（IC2）Output end connection step-down type dc power conversion chip（IC1）Second port（FB）, the operational amplifier（IC2）Positive power source terminal connection step-down type dc power conversion chip（IC1）Fifth port（VIN）, operational amplifier（IC2）Negative power end ground connection；Schottky diode（D2）Plus earth, negative pole connection step-down type dc power conversion chip（IC1）The 3rd port（SW）；Step-down type dc power conversion chip（IC1）First port（GN）Ground connection；The filter coil（L1）First end connection step-down type dc power conversion chip（IC1）The 3rd port（SW）, the second end is the positive output end of drive circuit, operational amplifier（IC2）In-phase input end as drive circuit negative output terminal；
Multiple LED lamp bead series connection are LED bead string；Multiple LED lamp bead connection in series-parallel are between the positive output end and negative output terminal of drive circuit.
9. the silicon solar cell light decay device according to claim 8 based on LED array light source, it is characterized in that：Including multigroup driving power supply, every group of driving power supply controllable its output current, and then adjust the luminous intensity for the LED bead string being connected thereto.
10. the silicon solar cell light decay device according to claim 1 based on LED array light source, it is characterized in that：Also include constant temperature system, be connected on plummer, to keep the temperature of solar cell piece constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610144461.5A CN107204742A (en) | 2016-03-15 | 2016-03-15 | A kind of silicon solar cell light decay device based on LED array light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610144461.5A CN107204742A (en) | 2016-03-15 | 2016-03-15 | A kind of silicon solar cell light decay device based on LED array light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107204742A true CN107204742A (en) | 2017-09-26 |
Family
ID=59903561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610144461.5A Pending CN107204742A (en) | 2016-03-15 | 2016-03-15 | A kind of silicon solar cell light decay device based on LED array light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107204742A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931716A (en) * | 2017-05-23 | 2018-12-04 | 光焱科技股份有限公司 | The measurement equipment of solar battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1456899A (en) * | 2003-05-14 | 2003-11-19 | 西安交通大学 | Constant pulsed light xenon lamp solar cell testing method |
| CN101290340A (en) * | 2008-04-29 | 2008-10-22 | 李果华 | LED solar simulator |
| CN101551437A (en) * | 2009-04-23 | 2009-10-07 | 华中科技大学 | Device for testing solar cell parameter |
| CN105449044A (en) * | 2015-12-30 | 2016-03-30 | 江南大学 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
-
2016
- 2016-03-15 CN CN201610144461.5A patent/CN107204742A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1456899A (en) * | 2003-05-14 | 2003-11-19 | 西安交通大学 | Constant pulsed light xenon lamp solar cell testing method |
| CN101290340A (en) * | 2008-04-29 | 2008-10-22 | 李果华 | LED solar simulator |
| CN101551437A (en) * | 2009-04-23 | 2009-10-07 | 华中科技大学 | Device for testing solar cell parameter |
| CN105449044A (en) * | 2015-12-30 | 2016-03-30 | 江南大学 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108931716A (en) * | 2017-05-23 | 2018-12-04 | 光焱科技股份有限公司 | The measurement equipment of solar battery |
| CN108931716B (en) * | 2017-05-23 | 2020-09-18 | 光焱科技股份有限公司 | Measuring equipment for solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105449044B (en) | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell | |
| CN101285564A (en) | Solar energy driven plant growth lamp | |
| CN105374706A (en) | Processing apparatus | |
| CN105050285A (en) | Plant lamp illumination system | |
| CN213958981U (en) | High-radiation light source for solar photovoltaic wafer manufacturing process | |
| CN102917518A (en) | Method for achieving LED (Light-emitted Diode) light bar current multiplication and corresponding drive circuit thereof | |
| CN107204742A (en) | A kind of silicon solar cell light decay device based on LED array light source | |
| JP5630457B2 (en) | Light irradiation device for solar cell testing | |
| CN102410504B (en) | Large-heat-radiation-surface LED lighting device and manufacture method thereof | |
| CN105351790A (en) | Non-compensation all-solid light source type LED solar simulator | |
| CN205299391U (en) | LED plant lamp with heat dissipation and waste heat recovery function | |
| CN107204389A (en) | A kind of quick light decay device of silicon solar cell using LED as light source | |
| CN208460804U (en) | Using LED as the quick preparation device of the perovskite solar battery of light source | |
| CN206849855U (en) | It is a kind of using LED as the quick light decay device of the silicon solar cell of light source | |
| CN201615359U (en) | LED lamp | |
| CN204497231U (en) | For LED encapsulation structure and the plant illumination device of plant illumination | |
| CN101266170A (en) | Method and apparatus for measuring multi-junction photovoltaic battery quantum efficiency | |
| CN207378508U (en) | A kind of Novel LED bulkhead lamp module | |
| CN203023961U (en) | Composite light source for hot spot endurance test of photovoltaic assembly | |
| CN209012886U (en) | A kind of LED backlight mould group of high brightness and LED display | |
| CN205862883U (en) | LED ultraviolet light irradiation cable crosslinking apparatus | |
| CN202580787U (en) | Novel light emitting diode (LED) lighting lamp | |
| CN206226778U (en) | Entire spectrum LED light source device | |
| CN206419908U (en) | A kind of integrated high-power T8LED supports of favourable heat conductivility | |
| CN205793549U (en) | A kind of intelligent LED lighting level classification controls device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170926 |