CN105374706A - Processing apparatus - Google Patents
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- CN105374706A CN105374706A CN201510099262.2A CN201510099262A CN105374706A CN 105374706 A CN105374706 A CN 105374706A CN 201510099262 A CN201510099262 A CN 201510099262A CN 105374706 A CN105374706 A CN 105374706A
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- 238000012545 processing Methods 0.000 title claims abstract description 104
- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 238000005286 illumination Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 16
- 238000005192 partition Methods 0.000 abstract 2
- 230000032258 transport Effects 0.000 description 88
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000004656 cell transport Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A processing device is suitable for carrying out illumination heating processing on a plurality of semiconductor solar cells and comprises a first cell transportation channel, a second cell transportation channel and a plurality of heating light sources. The second battery transport channel is adjacent to the first battery transport channel. The first battery transport channel and the second battery transport channel both comprise a transport device and two reflective partition plates. The transport device is suitable for transporting semiconductor solar cells. The two reflecting partition plates are respectively arranged along two opposite sides of the conveying device, so that the cross section of each first battery conveying channel and the cross section of each second battery conveying channel are U-shaped. The heating light source is arranged above the first battery transportation channel and the second battery transportation channel. The processing device can rapidly eliminate the defects of the semiconductor solar cell without influencing the efficiency of the semiconductor solar cell so as to reduce the light-induced attenuation phenomenon.
Description
Technical field
The present invention relates to a kind of processing unit of semiconductor element, particularly a kind of irradiation heat treatment apparatus of semiconductor solar cell.
Background technology
In tradition heliotechnics, the boron-doping single-chip made by tchaikovsky (CZ) long crystallization is mostly adopted to be used as making the host material of solar cell, reason is that the doping operation of this boron-doping single crystal silicon material is comparatively convenient and easy, and the distribution of the resistivity of manufactured silicon single crystal rod is comparatively even.But, adopt boron-doping monocrystalline silicon, especially adopt the boron-doping monocrystalline silicon of resistivity lower (such as within the scope of 0.5 Ω .cm extremely l.5 Ω .cm) as the solar cell produced by host material, its battery efficiency can decay under sunlight illumination or under carrier injection, this phenomenon is called photo attenuation (lightinduceddegradation, LID).
2% to 7% is about in the market with the decay of the efficiency of the solar cell obtained by boron-doping single crystal silicon substrate.The essential reason of the light induced attenuation characteristic of the efficiency of this type of solar cell is, higher with the oxygen content in the boron-doping monocrystalline silicon obtained by the long crystallization of tchaikovsky, and the oxygen atom of displacement boron atom in boron-doping monocrystalline silicon and monocrystalline silicon mid gap state can form boron oxygen complex under illumination or carrier are injected.Because boron oxygen complex is dark energy complex centre, sunken carrier can be hindered, thus can reduce the life-span of minority carrier, thus reduce the diffusion length of minority carrier, cause the efficiency of solar cell to reduce.
Known to how to reduce or to avoid the mode of photo attenuation to mainly contain following several at present: the first is the oxygen content reducing silicon wafer; The second is the doping of minimizing boron or uses other alloy, and such as gallium replaces boron; The third is then directly use N-shaped monocrystalline silicon piece to replace the p-type silicon wafer of the element dopings such as boron.But the way reducing the oxygen content of silicon wafer is that externally-applied magnetic field, so can increase processing procedure cost when long crystalline substance, and causes the price of silicon wafer to become expensive.Secondly, reduce Boron contents and the resistance of silicon wafer can be made to improve, be electrically deteriorated, and the lack of homogeneity of resistance.Such as, and with other group iii elements, gallium, replaces the way of boron, the cost of silicon wafer also can be made to increase.In addition, the cost ratio p-type monocrystalline silicon piece of N-shaped monocrystalline silicon piece is high, therefore replaces the sector-meeting of p-type monocrystalline silicon with N-shaped monocrystalline silicon piece and causes cost to increase.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of processing unit, it utilizes irradiation heat treated, and when not affecting the efficiency of semiconductor solar cell, the defect of semiconductor solar cell can be eliminated fast, reduce the photo attenuation phenomenon of semiconductor solar cell further.
Another object of the present invention is to provide a kind of processing unit, and it can carry out irradiation heat treated to semiconductor solar cell by transfer mode continuously, eliminates the defect of semiconductor solar cell, therefore can realize the target of volume production.
To achieve these goals, the invention provides a kind of processing unit, be suitable for carry out irradiation heat treated to multiple semiconductor solar cell.This processing unit comprises the first battery transport channel, the second battery transport channel and multiple heated light sources.Second battery transport channel is adjacent to the first battery transport channel.First battery transport channel and the second battery transport channel all comprise conveying arrangement and two and reflect dividing plate.Conveying arrangement is suitable for transport aforesaid semiconductor solar cell.Two reflection dividing plates are arranged along relative two sides of conveying arrangement, to make the section shape of each first battery transport channel and the second battery transport channel be class U-shaped respectively.Heated light sources is located at the top of the first battery transport channel and the second battery transport channel.
According to one embodiment of the invention, each first battery transport channel above-mentioned and the second battery transport channel comprise intensification temperature adjustment district and main treatment region immediately preceding after intensification temperature adjustment district.
According to another embodiment of the present invention, the distance between above-mentioned heated light sources in intensification temperature adjustment district and conveying arrangement is less than the distance between heated light sources in main treatment region and conveying arrangement.
According to another embodiment of the present invention, each first battery transport channel above-mentioned and the second battery transport channel also comprise heating element and are located in intensification temperature adjustment district.
According to one more embodiment of the present invention, above-mentioned intensification temperature adjustment district is to the region being greater than 180 DEG C by the temperature increase of semiconductor solar cell.
According to one more embodiment of the present invention, each first battery transport channel above-mentioned and the second battery transport channel comprises main treatment region and the temperature adjustment district that lowers the temperature, wherein lower the temperature before temperature adjustment district is positioned at main treatment region, and a high-temperature process district before processing unit and between main treatment region.
According to one more embodiment of the present invention, above-mentioned cooling temperature adjustment district is the region temperature of semiconductor solar cell be reduced to lower than 230 DEG C.
According to one more embodiment of the present invention, above-mentioned conveying arrangement is communicated with high-temperature process district, with respectively by semiconductor solar cell directly and be sent to the temperature adjustment district that lowers the temperature continuously.
According to one more embodiment of the present invention, above-mentioned heated light sources is several elongated fluorescent tubes, and the vertical first battery transport channel of these elongated fluorescent tubes and the second battery transport channel.
According to one more embodiment of the present invention, each elongated fluorescent tube above-mentioned is across the first battery transport channel and the second battery transport channel.
According to one more embodiment of the present invention, above-mentioned heated light sources is multiple elongated fluorescent tubes, and the parallel first battery transport channel of these elongated fluorescent tubes and the second battery transport channel.
According to one more embodiment of the present invention, above-mentioned heated light sources is greater than 3000W/m for making semiconductor solar cell be subject to illumination in the first battery transport channel and the second battery transport channel
2multiple irradiation elements.
According to one more embodiment of the present invention, above-mentioned heated light sources is make the temperature of semiconductor solar cell in the first battery transport channel and the second battery transport channel be multiple irradiation elements of 200 DEG C to 230 DEG C.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises outer cover, multiple blast pipe and multiple temperature-sensitive sticker.Outer cover is located at above heated light sources.Blast pipe is located on outer cover, and is positioned at the top of main treatment region.Temperature-sensitive sticker is located in main treatment region respectively.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises outer cover and is located at above heated light sources, and wherein outer cover is equipped with multiple steam vent and is dispersed in above main treatment region.
According to one more embodiment of the present invention, above-mentioned steam vent is larger in the bore size of the zone line of each main treatment region.
According to one more embodiment of the present invention, above-mentioned steam vent is larger in the perforate density of the zone line of each main treatment region.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises multiple illuminance meter and multiple active covering plate.The below of conveying arrangement is liftably located at by illuminance meter.Active covering plate is located at the top of illuminance meter respectively, to separate illuminance meter and heated light sources.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises multiple current detector, is electrically connected respectively with heated light sources.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises cover plate, under wherein heated light sources is fixed on the bottom surface of cover plate.
According to one more embodiment of the present invention, above-mentioned cover plate is a liftable cover plate.
According to one more embodiment of the present invention, above-mentioned cover plate is located on reflection dividing plate turningly.
According to one more embodiment of the present invention, above-mentioned cover plate is extraction-type cover plate.
According to one more embodiment of the present invention, above-mentioned processing unit also comprises heat dissipating fluid pipeline and is located between the first battery transport channel and the adjacent reflection dividing plate of the second battery transport channel.
Technique effect of the present invention is:
An advantage of the present invention is that processing unit of the present invention is for utilizing irradiation heat treated, and can when not affecting the efficiency of semiconductor solar cell, the defect of quick elimination semiconductor solar cell, reduces the photo attenuation phenomenon of semiconductor solar cell further.
Another advantage of the present invention is that processing unit of the present invention can carry out irradiation heat treated to semiconductor solar cell by transfer mode continuously, eliminates the defect of semiconductor solar cell, therefore can realize the target of volume production.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Accompanying drawing explanation
Fig. 1 is the perspective view of a kind of processing unit according to one embodiment of the present invention;
Fig. 2 is the assembling schematic diagram of a kind of processing unit according to one embodiment of the present invention;
Fig. 3 is the perspective view of a kind of processing unit according to another embodiment of the present invention;
Fig. 4 A and 4B is the operation chart of the cover plate of a kind of processing unit according to another embodiment of the invention;
Fig. 5 A and 5B is the operation chart of the cover plate of a kind of processing unit according to an execution mode more of the present invention;
Fig. 6 A and 6B is the operation chart of the cover plate of a kind of processing unit according to an execution mode more of the present invention;
Fig. 7 loses comparison diagram for the battery efficiency caused because of photo attenuation with the semiconductor solar cell of unprocessed mistake after a kind of processing unit process of one embodiment of the present invention;
Fig. 8 A is the configuration schematic diagram of a kind of processing unit according to one embodiment of the present invention;
Fig. 8 B is the configuration schematic diagram of a kind of processing unit according to another embodiment of the present invention;
Fig. 9 is a kind of conveying arrangement of processing unit, the position relationship schematic diagram between illuminance meter and active covering plate according to one embodiment of the present invention.
Wherein, Reference numeral
100 processing unit 100a processing unit
100b processing unit 100c processing unit
100d processing unit 100e processing unit
102 semiconductor solar cell 104a battery transport channels
104b battery transport channel 104c battery transport channel
104d battery transport channel 104e battery transport channel
106 heated light sources 106a heated light sources
106b heated light sources 108 conveying arrangement
110a reflects dividing plate 110b and reflects dividing plate
110c reflects dividing plate 110d and reflects dividing plate
110e reflects dividing plate 112a and reflects dividing plate
112b reflects dividing plate 112c and reflects dividing plate
112d reflects dividing plate 112e and reflects dividing plate
114 transmission direction 116 cover plates
116a cover plate 116b cover plate
116c cover plate 118 outer cover
118a outer cover 120 top board
120a top board 122 blast pipe
124 steam vent 126 cooling devices
The 128 main treatment regions in temperature adjustment district 130
The main treatment region of 132 main treatment region 134
136 device for loading 138 discharge mechanisms
140 temperature-sensitive sticker 142 current detectors
144 illuminance meter 146 active covering plates
148 region, high-temperature process districts 150
152 heating element 154 runner conversion equipments
Embodiment
Below in conjunction with accompanying drawing, structural principle of the present invention and operation principle are described in detail:
Referring to Fig. 1 and Fig. 2, it is respectively according to perspective view and the assembling schematic diagram of a kind of processing unit of one embodiment of the present invention.In the present embodiment, processing unit 100 in order to carry out irradiation heat treated to many semiconductor solar cells 102, can repair the defect of the semiconductor substrate of semiconductor solar cell 102 by this.Semiconductor solar cell 102 can be solar cells made of crystalline silicon.In some instances, semiconductor solar cell 102 is boron-doping monocrystaline silicon solar cell or B-doped Polycrystalline Silicon solar cell.And the irradiation heat treated that processing unit 100 pairs of semiconductor solar cells 102 are done can eliminate the boron oxygen defect of the overwhelming majority in the boron-doping single crystal silicon substrate of semiconductor solar cell 102 within very short time, to reduce the loss in efficiency of semiconductor solar cell 102 because of photo attenuation.
In certain embodiments, processing unit 100 mainly comprises at least one battery transport channel and several heated light sources 106.In an illustrative example, as shown in Figure 2, processing unit 100 comprises multiple battery transport channel 104a, 104b, 104c, 104d and 104e.104a ~ 104e is arranged adjacent one another for these battery transport channels.In some instances, each battery transport channel 104a ~ 104e comprises a conveying arrangement 108, and also comprise respectively two reflection dividing plate 110a and 112a, 110b and 112b, 110c and 112c, 110d and 112d, with 110e and 112e.Conveying arrangement 108 can in order to transport semiconductor solar cell 102.Each conveying arrangement 108 can such as be made up of a conveyer belt, or can be made up of two conveyer belts.Certainly, each conveying arrangement 108 also can be made up of several roller, or can be made up of a conveyer belt several roller of arranging in pairs or groups, and the present invention is not subject to the limits.
Please referring again to Fig. 2, in battery transport channel 104a, two reflection dividing plate 110a and 112a are arranged along relative two sides of conveying arrangement 108 respectively, namely the transmission direction 114 of dividing plate 110a and 112a along semiconductor solar cell 102 is reflected, and relative two sides erected respectively at conveying arrangement 108, and facing each other.Therefore, the section shape be made up of reflection dividing plate 110a and 112a and conveying arrangement 108 is class U-shaped.Same, two reflection dividing plate 110b and 112b are arranged along relative two sides of conveying arrangement 108 respectively, and make the section shape of battery transport channel 104b be class U-shaped.Two reflection dividing plate 110c and 112c are arranged along relative two sides of conveying arrangement 108 respectively, and make the section shape of battery transport channel 104c be class U-shaped.Two reflection dividing plate 110d and 112d are arranged along relative two sides of conveying arrangement 108 respectively, and make the section shape of battery transport channel 104d be class U-shaped.Two reflection dividing plate 110e and 112e are arranged along relative two sides of conveying arrangement 108 respectively, and make the section shape of battery transport channel 104e be class U-shaped.Wherein, reflection dividing plate 110a ~ 110e and 112a ~ 112e for making use light reflecting material matter, its to visible light reflectance for being greater than 70%.In some illustrative example, reflection dividing plate 110a ~ 110e and 112a ~ 112e can be metal material.
In some illustrative example, in processing unit 100, the spacing between wantonly two adjacent battery transport channel 104a ~ 104e is about 1 centimeter to 15 centimeters, is preferably 2 centimeters to 3 centimeters, in order to heat radiation.For example, as shown in Figure 2, spacing between the reflection dividing plate 112a of battery transport channel 104a and the reflection dividing plate 110b of adjacent cell transport channel 104b is about 2 centimeters to 3 centimeters, and its spacing can adjust according to the Temperature Distribution of actual treatment device 100 and radiating condition.In specific examples, processing unit 100 is optionally at the neighboring reflection dividing plate of adjacent cell transport channel 104a ~ 104e, such as reflect between dividing plate 112a and 110b, 112b and 110c, 112c and 110d or 112d and 110e, heat dissipating fluid pipeline is set, with further improving radiating effect.In addition, two of battery transport channel 104a reflect dividing plate 110a and 112a, two reflection dividing plate 110b and the 112b of battery transport channel 104b, two of battery transport channel 104c reflect dividing plate 110c and 112c, two distances reflected between dividing plate 110e and 112e of two reflection dividing plate 110d and the 112d and battery transport channel 104e of battery transport channel 104d are about 17 centimeters to 20 centimeters.
Heated light sources 106 is arranged on the top of these battery transport channels 104a ~ 104e, and is positioned on reflection dividing plate 110a ~ 110e and 112a ~ 112e, reflects towards the semiconductor solar cell 102 on device 108 with light heated light sources 106 launched.In some instances, heated light sources 106 can be Halogen lamp LED, xenon lamp or incandescent lamp bulb.The illumination range that heated light sources 106 pairs of semiconductor solar cells 102 apply can be such as 2500W/m
2to 5000W/m
2.In addition, heated light sources 106 can be elongated fluorescent tube, as shown in Figure 2.Or processing unit 100a as shown in Figure 3, it is the heated light sources 106 adopting the heated light sources 106a of bulb type to replace elongated fluorescent tube.In the example shown in Fig. 2, heated light sources 106 is elongated fluorescent tube, and heated light sources 106 can be positioned at the top of reflection dividing plate 110a ~ 110e and 112a ~ 112e or be arranged in the top of reflection dividing plate 110a ~ 110e and 112a ~ 112e.In the example shown in Fig. 3, heated light sources 106a is bulb type, and therefore heated light sources 106a can be positioned at the top of reflection dividing plate 110a ~ 110e and 112a ~ 112e or be positioned at battery transport channel 104a ~ 104e completely.
In battery transport channel 104a ~ 104e, the light that heated light sources 106a sends can be concentrated by reflection dividing plate 110a ~ 110e and 112a ~ 112e, and can increase the temperature be applied on semiconductor solar cell 102, illumination and the light uniformity further.In addition, by the mode of adjustment heated light sources 106a to the power of the distance between reflection dividing plate 110a ~ 110e and 112a ~ 112e of the distance of the semiconductor solar cell 102 in battery transport channel 104a ~ 104e, battery transport channel 104a ~ 104e bis-side and/or heated light sources 106a itself, control illumination that semiconductor solar cell 102 is applied and temperature.In an illustrative example, the setting of reflection dividing plate 110a ~ 110e and 112a ~ 112e can make area be 15.6 × 15.6cm
2monolithic semiconductor solar cell 102 in optical uniformity increase by 1.5 times to 2 times.
As shown in Figure 2, when adopting the heated light sources 106 of elongated fluorescent tube, the vertical battery transport channel 104a ~ 104e of these heated light sources 106, the i.e. length bearing of trend of the length bearing of trend vertical battery transport channel 104a ~ 104e of heated light sources 106, the length bearing of trend of battery transport channel 104a ~ 104e can such as parallel transmission direction 114.In some illustrative example, please referring again to Fig. 2, the heated light sources 106 of each elongated fluorescent tube is across battery transport channel 104a ~ 104e.In specific examples, the heated light sources 106 of one elongated fluorescent tube can only across the battery transport channel 104a ~ 104e of part, such as the heated light sources 106 of an elongated fluorescent tube is only across battery transport channel 104a and 104b or across battery transport channel 104a ~ 104c or across battery transport channel 104c ~ 104e, but has all needed heated light sources 106 to pass through above each battery transport channel 104a ~ 104e.Being designed with to be beneficial to of the vertical battery transport channel 104a ~ 104e of heated light sources 106 substitutes heated light sources 106.
Referring to Fig. 4 A to Fig. 5 B, wherein Fig. 4 A and Fig. 4 B and Fig. 5 A and Fig. 5 B is respectively according to the operation chart of the cover plate of the processing unit of two execution modes of the present invention.When adopting the heated light sources 106b of elongated fluorescent tube, these heated light sources 106b parallel cells transport channels 104a ~ 104e, the i.e. length bearing of trend of the length bearing of trend parallel cells transport channel 104a ~ 104e of heated light sources 106b, can such as parallel transmission direction 114.In some illustrative example, please referring again to Fig. 4 B and Fig. 5 B, each battery transport channel 104a ~ 104e can comprise several heated light sources 106b be connected in series along transmission direction 114.In specific examples, each battery transport channel 104a ~ 104e only correspondence is provided with a heated light sources 106b, and the length of this heated light sources 106b approximates the length of corresponding battery transport channel 104a ~ 104e.
Please refer to following table 1 and table 2, its be arrange respectively the battery efficiency difference of semiconductor solar cell 102 before and after the different illumination intensity process of processing unit 100 is shown and before and after the process of different disposal temperature with the battery efficiency difference before and after corresponding irradiation attenuation test.Wherein, irradiation attenuation test is through a sunlight and at temperature 110 DEG C, the battery efficiency difference after acceleration light decay test (acceleratedlightinduceddegradation, ALID) of 10 minutes.
Table 1
Table 2
From upper table 1, utilize processing unit 100 pairs of semiconductor solar cells 102 to carry out the intensity of illumination of more than three sunlights, namely illumination is 3000W/m
2above irradiation heat treated, the impact for the battery efficiency of semiconductor solar cell 102 is less.In addition, from upper table 2, after the treatment temperature process of less than 200 DEG C, although the photo attenuation of semiconductor solar cell 102 is less, the battery efficiency loss after process is larger.In addition, after the treatment temperature process of more than 235 DEG C, although little for the efficiency impact of semiconductor solar cell 102, photo attenuation is larger.
Therefore, in some instances, heated light sources 106 is greater than 3000W/m for making semiconductor solar cell 102 be subject to illumination in battery transport channel 104a ~ 104e
2irradiation element, namely the illumination of the irradiation heat treated of semiconductor solar cell 102 controls be greater than 3000W/m
2.In addition, heated light sources 106 can be the irradiation element making the temperature of semiconductor solar cell 102 in battery transport channel 104a ~ 104e maintain 200 DEG C to 230 DEG C, and namely the irradiation heat treated of semiconductor solar cell 102 is make the temperature of semiconductor solar cell 102 maintain 200 DEG C to 230 DEG C.
In some illustrative example, after semiconductor solar cell 102 completes processing procedure, utilize processing unit 100 to carry out illumination to these semiconductor solar cells 102 and be greater than 3000W/m
2and temperature maintains the irradiation heat treated of 200 DEG C to 230 DEG C, can under the battery efficiency reduced or do not affect semiconductor solar cell 102, within the short time, eliminate the defect of the silicon wafer base material of semiconductor solar cell 102 rapidly, reach the effect of the photo attenuation reducing semiconductor solar cell 102 further.In these illustrative example, the time of irradiation heat treated is about 1.5 minutes to about 3 minutes.Time due to irradiation heat treated can foreshorten within 3 minutes, and the mode therefore can transmitted continuously eliminates the defect of semiconductor solar cell 102, therefore can realize the target of volume production.
Please also refer to Fig. 7, it loses comparison diagram for the battery efficiency caused because of photo attenuation with the semiconductor solar cell of unprocessed mistake after a kind of processing unit process of one embodiment of the present invention.As shown in Figure 7, compared to the semiconductor solar cell heated without illumination, the semiconductor solar cell 102 after processing unit 100 processes has very little photo attenuation loss in efficiency.
In some instances, please referring again to Fig. 2, processing unit 100 optionally comprises cover plate 116.Cover plate 116 is located at above battery transport channel 104a ~ 104e, and is positioned on reflection dividing plate 110a ~ 110e and 112a ~ 112e.Under heated light sources 106 is then fixed on the bottom surface of cover plate 116.In the present embodiment, except the pattern of cover plate 116, multiple different cover plate pattern can be had.Cover plate 116a please referring again to Fig. 4 A and Fig. 4 B, processing unit 100b is liftable cover plate.During for carrying out the replacing of the heated light sources 106b of processing unit 100b, as Fig. 4 B, directly cover plate 116a can be raised, more also changes heated light sources 106b.
In addition, the cover plate 116b please referring again to Fig. 5 A and Fig. 5 B, processing unit 100c is reversible cover plate, and cover plate 116b is for being arranged on rotationally on reflection dividing plate 110a and 110b.During for carrying out the replacing of the heated light sources 106b of processing unit 100c, can as Fig. 5 B, direct rotating plate 116b, changes heated light sources 106b.Please refer to Fig. 6 A and Fig. 6 B, the cover plate 116c of processing unit 100d is extraction-type cover plate, and cover plate 116c can towards non-parallel with the transmission direction 114 of semiconductor solar cell 102 above reflection dividing plate 110a ~ 110e and 112a ~ 112e, such as vertical direction is moved.During for carrying out the replacing of the heated light sources 106a of processing unit 100d, can as Fig. 6 B, elder generation is direct extracts out cover plate 116c with the nonparallel direction of transmission direction 114 of semiconductor solar cell 102 from the top court of reflection dividing plate 110a ~ 110e and 112a ~ 112e, then carries out the replacing of heated light sources 106a.
Please also refer to Fig. 8 A, it is the configuration schematic diagram of a kind of processing unit according to one embodiment of the present invention.In certain embodiments, each battery transport channel 104a ~ 104e of processing unit 100 all can distinguish the temperature adjustment district 128 having porch, and immediately preceding the main treatment region of one or more after temperature adjustment district 128, such as main treatment region 130,132 and 134, as shown in Figure 8 A.In some instances, pending semiconductor solar cell 102 is delivered to processing unit 100 by last treatment facility, be dispensed to each conveying arrangement 108 one by one by the device for loading 136 before the entrance of processing unit 100 again, and be loaded into each battery transport channel 104a ~ 104e to carry out irradiation heat treated.In such example, temperature adjustment district 128 can be intensification temperature adjustment district, is preferably the district that is rapidly heated, in order to the temperature improving semiconductor solar cell 102 fast.When semiconductor solar cell 102 is warming up to through temperature adjustment district 128 and is greater than 180 DEG C, the main treatment region 130 that continues can be entered to carry out the defect mending process of irradiation heating.
In some illustrative example, owing to being 3000W/m in illumination
2when above, can start when temperature is greater than 180 DEG C to carry out defect mending reaction fast, the temperature adjustment district 128 of therefore heating up is to the region being greater than 180 DEG C by the temperature increase of semiconductor solar cell 102.In temperature adjustment district 128, semiconductor solar cell 102 is made to be raised to the temperature of irradiation heating repairing treatment sooner, such as more than 180 DEG C, the time that semiconductor solar cell 102 carries out repairing in each battery transport channel 104a ~ 104e is longer, and the utilance of battery transport channel 104a ~ 104e so can be made higher.
In an illustrative example, heated light sources 106 in the temperature adjustment district 128 of heating up and the distance between conveying arrangement 108 are less than the distance between heated light sources 106 in main treatment region 130,132 and 134 and conveying arrangement 108, to promote the illumination of heated light sources 106 pairs of semiconductor solar cells 102 in temperature adjustment district 128, and then semiconductor solar cell 102 can be rapidly heated.In another illustrative example, the temperature adjustment district 128 of each battery transport channel 104a ~ 104e can arrange extra heating element 152, with the heated light sources 106 of arranging in pairs or groups in temperature adjustment district 128, semiconductor solar cell 102 is rapidly heated.In another illustrative example, the power of the heated light sources 106 in each temperature adjustment district 128 can be heightened, or use more high-power heated light sources 106 in each temperature adjustment district 128, in order to the temperature improving semiconductor solar cell 102 fast.
In other examples, please refer to Fig. 8 B, processing unit 100e can continue be arranged on semiconductor solar cell 102 electrode slurry printing after high temperature sintering furnace tube device after, now processing unit 100e can omit the device for loading 136 of processing unit 100, and each conveying arrangement 108 of battery transport channel 104a ~ 104e is communicated with the high-temperature process district 148 of high temperature furnace pipe equipment, in order to by the semiconductor solar cell 102 crossed through high-temperature process district 148 high-temperature process directly and be sent to corresponding battery transport channel 104a ~ 104e continuously.In such example, temperature adjustment district 128 can be cooling temperature adjustment district, before wherein temperature adjustment district 128 is positioned at main treatment region 130,132 and 134, and between high-temperature process district 148 and main treatment region 130.In addition, in these examples, processing unit 100e can be provided with runner conversion equipment 154, with the quantity of the conveying arrangement 108 according to processing unit 100e, and is assigned on each conveying arrangement 108 by the semiconductor solar cell 102 from high-temperature process district 148.Each conveying arrangement 108 directly and continuously will to be delivered in corresponding temperature adjustment district 128 through the semiconductor solar cell 102 that runner conversion equipment 154 is assigned from high-temperature process district 148.In some illustrative example, the temperature adjustment district 128 of cooling is by the region below the greenhouse cooling to 230 of semiconductor solar cell 102 DEG C.When semiconductor solar cell 102 is cooled to below 230 DEG C through temperature adjustment district 128, the main treatment region 130 that continues can be entered to carry out the defect mending process of irradiation heating.Therefore, in such example, the setting in the district that is rapidly heated can be saved, and omit temperature-rise period, and then can processing time be shortened.In specific examples, in each temperature adjustment district 128, additionally heat sink can be set, in order to the temperature fall time shortening semiconductor solar cell 102.
Please referring again to Fig. 8 A, after heating up or lower the temperature in temperature adjustment district 128, semiconductor solar cell 102 advanced person becomes owner for the treatment of region 130, then sequentially through main treatment region 132 and 134, carry out irradiation heat treated, repair the defect of semiconductor solar cell 102, effectively improve the problem of the battery efficiency decline that photo attenuation causes, and then the efficiency of semiconductor solar cell 102 can be promoted.Referring to Fig. 2 and Fig. 8 A, processing unit 100 also can comprise after cooling device 126 is located at main treatment region 134, to have cooled the semiconductor solar cell 102 after irradiation heat treated, and the temperature of semiconductor solar cell 102 is down to room temperature, in order to the carrying out of the follow-up operation that takes up.Semiconductor solar cell 102 is then transported to discharge mechanism 138 by conveying arrangement 108, and will irradiation heat treated be completed and semiconductor solar cell 102 through cooling shifts out processing unit 100, and complete the defect mending processing procedure of semiconductor solar cell 102.
In some instances, please referring again to Fig. 1, Fig. 2 and Fig. 8 A, processing unit 100 alternative comprises outer cover 118, several blast pipe 122 and several temperature-sensitive sticker 140.Outer cover 118 can be located at above all heated light sources 106, and can cover in all battery transport channel 104a ~ 104e.Blast pipe 122 can be arranged in the top board 120 of outer cover 118, and runs through top board 120 and be communicated with the space in outer cover 118.In some illustrative example, each blast pipe 122 can be provided with valve, by the adjustment keying of valve and the degree of unlatching, can control the air-flow size of being extracted out by blast pipe 122.In specific examples, blast pipe 122 is arranged on the top of main treatment region 130,132 and 134.
Temperature-sensitive sticker 140 is located in the main treatment region 130,132 and 134 of each battery transport channel 104a ~ 104e respectively, in order to detect the temperature of these main treatment regions 130,132 and 134.When the temperature that a temperature-sensitive sticker 140 detects is too high, this temperature-sensitive sticker 140 sends signal, and by above this temperature-sensitive sticker 140 or neighbouring blast pipe 122 is opened or open greatly by the valve of the blast pipe 122 originally opened after feedback controls, the throughput in this region is increased, reduces the temperature in this region.Otherwise, when the temperature that a temperature-sensitive sticker 140 detects is lower, this temperature-sensitive sticker 140 sends signal, and by above this temperature-sensitive sticker 140 or neighbouring blast pipe 122 cuts out or turned down by the valve of the blast pipe 122 originally opened after feedback controls, the throughput in this region is reduced, promotes the temperature in this region.
This blast pipe 122 is not limited to, in order to be discharged by the hot-air of main treatment region 130,132 and 134, also can be used to cool ambient air is directed into main treatment region 130,132 and 134, directly reduces the temperature in this region.Same, by adjusting the keying of valve and the degree of unlatching of blast pipe 122, control the flow of cooled air size imported by blast pipe 122.
In other examples, please referring again to Fig. 3 and Fig. 8 A, processing unit 100a alternative comprises outer cover 118a.Outer cover 118a can be located at above all heated light sources 106a, and can cover in all battery transport channel 104a ~ 104e.Be provided with many steam vents 124 in outer cover 118a, these steam vents 124 may be interspersed within the top board 120a of outer cover 118a, and run through top board 120a and be communicated with the space in outer cover 118a.Steam vent 124 can have sizes, and the size of steam vent 124 can inequality, or portion size is identical, and another part size is different.Certainly, these steam vents 124 also can be single size.In addition, the density of setting of steam vent 124 in top board 120a can be uneven, also can be even setting.Because the temperature of the main treatment region 108 of each battery transport channel 104a ~ 104e is usually higher, especially the temperature of the zone line of top board 120a is higher, therefore in some illustrative example, steam vent 124 is larger in the bore size of the zone line of the main treatment region 108 of each battery transport channel 104a ~ 104e, or steam vent 124 is larger in the perforate density of the zone line of the main treatment region 108 of each battery transport channel 104a ~ 104e, to increase air displacement, promote the cooling efficiency in these regions.In specific examples, steam vent 124 is arranged on the top of main treatment region 130,132 and 134.The shape of steam vent 124 can be identical, maybe can have various shape, and such as whole shape shape that is different or portion discharge hole 124 is identical and part is different.
Referring to Fig. 2 and Fig. 9, wherein Fig. 9 is a kind of conveying arrangement of processing unit, the position relationship schematic diagram between illuminance meter and active covering plate according to one embodiment of the present invention.In some instances, processing unit 100 also optionally comprises several illuminance meter 144 and several active covering plate 146.In some illustrative example, illuminance meter 144 is liftably arranged under conveying arrangement 108, active covering plate 146 is then located at the top of these illuminance meters 144 respectively, to separate illuminance meter 144 and heated light sources 106, to avoid illuminance meter 144 to cause temperature to raise because being irradiated by heated light sources 106 for a long time, and then illuminance meter 144 life-span is caused significantly to reduce.When the illumination that illuminance meter 144 need be used to carry out semiconductor solar cell 102 measures, active covering plate 146 can be removed above illuminance meter 144, illuminance meter 144 then rises to the height at conveying arrangement 108 place, namely semiconductor solar cell 102 upper level with pending is approximately equivalent, carries out the measurement of illumination.After completing measurement, illuminance meter 144 declines, then moves active covering plate 146 to cover illuminance meter 144.
Please referring again to Fig. 2 and Fig. 8 A, in some instances, processing unit 100 optionally comprises several current detector 142, and wherein these current detectors 142 are electrically connected with heated light sources 106 respectively, and in order to detect the current value of each heated light sources 106.When current detector 142 detects that the current value of heated light sources 106 drops to below a particular value, represent that the resistance of this heated light sources 106 rises, and the usefulness of this heated light sources 106 falls into a decline.Now, as shown in Figure 8 A, heated light sources 106 can be extracted into region 150 above battery transport channel 104a ~ 104e, carry out the replacing operation of heated light sources 106.
From above-mentioned execution mode, an advantage of the present invention is that processing unit of the present invention is for utilizing irradiation heat treated, and can when not affecting the efficiency of semiconductor solar cell, the defect of quick elimination semiconductor solar cell, reduces the photo attenuation phenomenon of semiconductor solar cell further.
From above-mentioned execution mode, another advantage of the present invention is that processing unit of the present invention can carry out irradiation heat treated to semiconductor solar cell by transfer mode continuously, eliminates the defect of semiconductor solar cell, therefore can realize the target of volume production.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (24)
1. a processing unit, be suitable for carry out an irradiation heat treated to multiple semiconductor solar cell, it is characterized in that, this processing unit comprises:
One first battery transport channel;
One second battery transport channel, is adjacent to this first battery transport channel, and wherein each this first battery transport channel and this second battery transport channel comprise:
One conveying arrangement, is suitable for transport the plurality of semiconductor solar cell; And
Two reflection dividing plates, relative two sides respectively along this conveying arrangement are arranged, and are a class U-shaped to make a section shape of each this first battery transport channel and this second battery transport channel; And
Multiple heated light sources, is located at the top of this first battery transport channel and this second battery transport channel.
2. processing unit as claimed in claim 1, is characterized in that, each this first battery transport channel and this second battery transport channel comprise an intensification temperature adjustment district and a main treatment region immediately preceding after this intensification temperature adjustment district.
3. processing unit as claimed in claim 2, is characterized in that, the plurality of heated light sources in this intensification temperature adjustment district and the distance between this conveying arrangement are less than the distance between the plurality of heated light sources in this main treatment region and this conveying arrangement.
4. processing unit as claimed in claim 2, it is characterized in that, each this first battery transport channel and this second battery transport channel also comprise a heating element and are located in this intensification temperature adjustment district.
5. processing unit as claimed in claim 2, it is characterized in that, this intensification temperature adjustment district is to the region being greater than 180 DEG C by the temperature increase of the plurality of semiconductor solar cell.
6. processing unit as claimed in claim 1, it is characterized in that, each this first battery transport channel and this second battery transport channel comprise:
One main treatment region; And
One cooling temperature adjustment district, before being positioned at this main treatment region, and a high-temperature process district before this processing unit and between this main treatment region.
7. processing unit as claimed in claim 6, it is characterized in that, this cooling temperature adjustment district is the region temperature of the plurality of semiconductor solar cell be reduced to lower than 230 DEG C.
8. processing unit as claimed in claim 6, it is characterized in that, the plurality of conveying arrangement is communicated with this high-temperature process district, with respectively by the plurality of semiconductor solar cell directly and be sent to the plurality of cooling temperature adjustment district continuously.
9. processing unit as claimed in claim 1, it is characterized in that, the plurality of heated light sources is multiple elongated fluorescent tubes, and the plurality of elongated fluorescent tube this first battery transport channel vertical and this second battery transport channel.
10. processing unit as claimed in claim 9, it is characterized in that, each the plurality of elongated fluorescent tube is across this first battery transport channel and this second battery transport channel.
11. processing unit as claimed in claim 1, is characterized in that, the plurality of heated light sources is multiple elongated fluorescent tubes, and the plurality of elongated fluorescent tube this first battery transport channel parallel and this second battery transport channel.
12. processing unit as claimed in claim 1, is characterized in that, the plurality of heated light sources is greater than 3000W/m for making the plurality of semiconductor solar cell be subject to illumination in this first battery transport channel and this second battery transport channel
2multiple irradiation elements.
13. processing unit as claimed in claim 1, is characterized in that, the plurality of heated light sources is make the temperature of the plurality of semiconductor solar cell in this first battery transport channel and this second battery transport channel be multiple irradiation elements of 200 DEG C to 230 DEG C.
14. processing unit as claimed in claim 1, is characterized in that, also comprise:
One outer cover, is located at above the plurality of heated light sources;
Multiple blast pipe, is located on this outer cover, and is positioned at the top of the plurality of main treatment region; And
Multiple temperature-sensitive sticker, is located in the plurality of main treatment region respectively.
15. processing unit as claimed in claim 1, is characterized in that, also comprise an outer cover and are located at above the plurality of heated light sources, and wherein this outer cover is equipped with multiple steam vent and is dispersed in above the plurality of main treatment region.
16. processing unit as claimed in claim 15, it is characterized in that, the plurality of steam vent is larger in the bore size of a zone line of each the plurality of main treatment region.
17. processing unit as claimed in claim 15, it is characterized in that, the plurality of steam vent is larger in the perforate density of a zone line of each the plurality of main treatment region.
18. processing unit as claimed in claim 1, is characterized in that, also comprise:
Multiple illuminance meter, is liftably located at the below of the plurality of conveying arrangement; And
Multiple active covering plate, is located at the top of the plurality of illuminance meter respectively, to separate the plurality of illuminance meter and the plurality of heated light sources.
19. processing unit as claimed in claim 1, is characterized in that, also comprise multiple current detector, be electrically connected respectively with the plurality of heated light sources.
20. processing unit as claimed in claim 1, is characterized in that, also comprise a cover plate, under wherein the plurality of heated light sources is fixed on a bottom surface of this cover plate.
21. processing unit as claimed in claim 20, is characterized in that, this cover plate is a liftable cover plate.
22. processing unit as claimed in claim 20, it is characterized in that, this cover plate is located on the plurality of reflection dividing plate turningly.
23. processing unit as claimed in claim 20, is characterized in that, this cover plate is an extraction-type cover plate.
24. processing unit as claimed in claim 1, is characterized in that, also comprise a heat dissipating fluid pipeline, are located between this first battery transport channel and the adjacent the plurality of reflection dividing plate of this second battery transport channel.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103128147A TWI513028B (en) | 2014-08-15 | 2014-08-15 | Treating apparatus |
| TW103128147 | 2014-08-15 |
Publications (1)
| Publication Number | Publication Date |
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| CN105374706A true CN105374706A (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510099262.2A Pending CN105374706A (en) | 2014-08-15 | 2015-03-06 | Processing apparatus |
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| JP (1) | JP2016042569A (en) |
| KR (1) | KR20160021026A (en) |
| CN (1) | CN105374706A (en) |
| TW (1) | TWI513028B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615787A (en) * | 2016-12-13 | 2018-10-02 | 茂迪股份有限公司 | Semiconductor substrate processing apparatus |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI601304B (en) * | 2016-01-18 | 2017-10-01 | 茂迪股份有限公司 | Treating apparatus |
| TW201742259A (en) * | 2016-05-16 | 2017-12-01 | 昱晶能源科技股份有限公司 | Method of hydrogenating solar cell and the device thereof |
| CN106876496B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| TWI635247B (en) | 2017-10-02 | 2018-09-11 | 財團法人工業技術研究院 | Solidifying equipment |
| CN108387108B (en) * | 2018-04-02 | 2023-09-22 | 通威太阳能（安徽）有限公司 | Temperature regulating device in solar cell sintering furnace |
| CN109004061B (en) * | 2018-06-28 | 2023-07-18 | 华南理工大学 | Electric injection annealing test device and method for crystalline silicon photovoltaic solar cell |
| KR102568449B1 (en) * | 2021-06-15 | 2023-08-23 | 재단법인 구미전자정보기술원 | Apparatus for analyzing light-induced degradation and lid healing process characteristic of solar cell module and the method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201607072A (en) | 2016-02-16 |
| JP2016042569A (en) | 2016-03-31 |
| TWI513028B (en) | 2015-12-11 |
| KR20160021026A (en) | 2016-02-24 |
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