TWI513028B - Treating apparatus - Google Patents
Treating apparatus Download PDFInfo
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- TWI513028B TWI513028B TW103128147A TW103128147A TWI513028B TW I513028 B TWI513028 B TW I513028B TW 103128147 A TW103128147 A TW 103128147A TW 103128147 A TW103128147 A TW 103128147A TW I513028 B TWI513028 B TW I513028B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Description
本發明是有關於一種半導體元件之處理裝置，且特別是有關於一種半導體太陽能電池之照光加熱處理裝置。The present invention relates to a processing device for a semiconductor device, and more particularly to an illumination heat treatment device for a semiconductor solar cell.
傳統太陽能技術中，大都採用柴可夫斯基(CZ)長晶法所製作之摻硼單晶片來作為製作太陽能電池的基質材料，原因在於這種摻硼單晶矽材料的摻雜工序較為方便易行，且所製造出之單晶矽棒的電阻率的分佈較為均勻。然而，採用摻硼單晶矽，尤其是採用電阻率較低(例如在0.5Ω．cm至1.5Ω．cm範圍內)的摻硼單晶矽作為基質材料所製作出的太陽能電池，其電池效率在太陽光光照下或在載流子注入下會衰減，這種現象稱為光致衰減(light induced degradation，LID)。In the traditional solar energy technology, the boron-doped single wafer fabricated by Tchaikovsky (CZ) crystal growth method is mostly used as a matrix material for making solar cells, because the doping process of the boron-doped single crystal germanium material is convenient. It is easy to carry out, and the distribution of the resistivity of the manufactured single crystal crucible rod is relatively uniform. However, a boron-doped single crystal germanium, in particular, a solar cell fabricated using a boron-doped single crystal germanium having a low specific resistance (for example, in the range of 0.5 Ω·cm to 1.5 Ω·cm) as a host material, has battery efficiency. It is attenuated under the illumination of sunlight or under the injection of carriers. This phenomenon is called light induced degradation (LID).
目前市場上以摻硼單晶矽基質所製得之太陽能電池的效率衰減約為2%至7%。此類太陽能電池之效率的光致衰減特性的本質原因在於，以柴可夫斯基長晶法所製得之摻硼單晶矽中的氧含量較高，而摻硼單晶矽中之替位硼原子和單晶矽中間隙態的氧原子在光照或載子注入下會形成硼氧複合體。由於硼氧複合體為深能複合中心，會阻陷載子，因而會降低少數載流子的壽命，從而降低少數載子 的擴散距離，導致太陽能電池的效率降低。The efficiency of solar cells made with boron-doped single crystal germanium substrates is currently about 2% to 7%. The essential reason for the photo-attenuation characteristics of the efficiency of such solar cells is that the boron-doped single crystal germanium produced by the Tchaikovsky crystal growth method has a higher oxygen content, and the boron-doped single crystal germanium is replaced by The boron atom and the oxygen atom in the gap state in the single crystal germanium form a boron oxide complex under illumination or carrier injection. Since the boron-oxygen complex is a deep energy recombination center, it will trap the carrier, thus reducing the lifetime of minority carriers, thereby reducing minority carriers. The diffusion distance causes the efficiency of the solar cell to decrease.
目前已知關於如何減少或避免光致衰減的方式主要有下列幾種：第一種是減少矽晶片之氧含量；第二種是減少硼的摻雜量或使用其它摻雜物，例如鎵來取代硼；第三種則是直接使用n型單晶矽片來取代硼等元素摻雜之p型矽晶片。但是，減少矽晶片之氧含量的做法是在長晶時，外加磁場，如此會增加製程成本，而導致矽晶片的價格變貴。其次，減少硼含量會使得矽晶片的電阻提高，電性變差，且電阻之均勻性差。而以其它三族元素，例如鎵，來取代硼的做法，也會使得矽晶片的成本增加。另外，n型單晶矽片的價格比p型單晶矽片高，因此以n型單晶矽片來取代p型單晶矽片會導致成本增加。At present, there are mainly known ways to reduce or avoid photo-attenuation: the first is to reduce the oxygen content of the germanium wafer; the second is to reduce the doping amount of boron or use other dopants such as gallium. The boron is substituted; the third is to directly replace the p-type germanium wafer doped with an element such as boron by using an n-type single crystal wafer. However, the practice of reducing the oxygen content of the tantalum wafer is to apply a magnetic field during the growth of the wafer, which increases the cost of the process and causes the price of the tantalum wafer to become expensive. Secondly, reducing the boron content causes the resistance of the germanium wafer to increase, the electrical properties to deteriorate, and the uniformity of the resistance to be poor. The replacement of boron with other tri-group elements, such as gallium, also increases the cost of germanium wafers. In addition, the price of the n-type single crystal tantalum sheet is higher than that of the p-type single crystal tantalum sheet, so that replacing the p-type single crystal tantalum sheet with the n-type single crystal tantalum sheet causes an increase in cost.
因此，本發明之一目的就是在提供一種處理裝置，其利用照光加熱處理，而可在不影響半導體太陽能電池之效率的情況下，快速消除半導體太陽能電池之缺陷，進一步降低半導體太陽能電池之光致衰減現象。Accordingly, it is an object of the present invention to provide a processing apparatus that utilizes illumination heating treatment to quickly eliminate defects of a semiconductor solar cell without affecting the efficiency of the semiconductor solar cell, thereby further reducing the light of the semiconductor solar cell. Attenuation phenomenon.
本發明之另一目的是在提供一種處理裝置，其可以連續傳遞方式對半導體太陽能電池進行照光加熱處理，來消除半導體太陽能電池之缺陷，因此可實現量產的目標。Another object of the present invention is to provide a processing apparatus which can perform illumination heating treatment on a semiconductor solar cell in a continuous transfer manner to eliminate defects of the semiconductor solar cell, thereby achieving mass production.
根據本發明之上述目的，提出一種處理裝置，適用以對複數個半導體太陽能電池進行照光加熱處理。此處理裝置包含第一電池運輸通道、第二電池運輸通道以及複數個加熱光源。第二電池運輸通道鄰設於第一電池運輸通 道。第一電池運輸通道與第二電池運輸通道均包含運輸裝置以及二反射隔板。運輸裝置適用以運輸前述之半導體太陽能電池。二反射隔板分別沿著運輸裝置之相對二側設置，以使每一第一電池運輸通道與第二電池運輸通道之剖面形狀呈類U字型。加熱光源設於第一電池運輸通道與第二電池運輸通道之上方。According to the above object of the present invention, a processing apparatus is proposed which is suitable for performing illumination heating treatment on a plurality of semiconductor solar cells. The processing device includes a first battery transport channel, a second battery transport channel, and a plurality of heating sources. The second battery transport passage is adjacent to the first battery transport passage Road. The first battery transport channel and the second battery transport channel both include a transport device and a second reflective baffle. The transport device is adapted to transport the aforementioned semiconductor solar cells. The two reflective baffles are respectively disposed along opposite sides of the transport device such that the cross-sectional shape of each of the first battery transport passage and the second battery transport passage is U-shaped. The heating source is disposed above the first battery transport channel and the second battery transport channel.
依據本發明之一實施例，上述每一第一電池運輸通道與第二電池運輸通道包含升溫調溫區與主處理區緊接在升溫調溫區之後。According to an embodiment of the invention, each of the first battery transport channel and the second battery transport channel includes a temperature-increasing temperature control zone and a main processing zone immediately after the temperature-increasing temperature-regulating zone.
依據本發明之另一實施例，上述位於升溫調溫區中之加熱光源與運輸裝置之間的距離小於位於主處理區中之加熱光源與運輸裝置之間的距離。According to another embodiment of the present invention, the distance between the heating source located in the temperature-increasing temperature adjustment zone and the transportation device is smaller than the distance between the heating source located in the main processing zone and the transportation device.
依據本發明之又一實施例，上述每一第一電池運輸通道與第二電池運輸通道更包含加熱元件設於升溫調溫區中。According to still another embodiment of the present invention, each of the first battery transport channel and the second battery transport channel further includes a heating element disposed in the temperature-increasing temperature adjustment zone.
依據本發明之再一實施例，上述升溫調溫區係將半導體太陽能電池之溫度提升至大於180℃之一區域。According to still another embodiment of the present invention, the temperature-increasing temperature adjustment zone raises the temperature of the semiconductor solar cell to a region greater than 180 °C.
依據本發明之再一實施例，上述每一第一電池運輸通道與第二電池運輸通道包含主處理區以及降溫調溫區，其中降溫調溫區位於主處理區之前，且介於處理裝置之前之一高溫處理區與主處理區之間。According to still another embodiment of the present invention, each of the first battery transport channel and the second battery transport channel includes a main processing area and a temperature decreasing temperature adjusting area, wherein the temperature decreasing temperature adjusting area is located before the main processing area and before the processing device One between the high temperature processing zone and the main processing zone.
依據本發明之再一實施例，上述之降溫調溫區係將半導體太陽能電池之溫度降低至低於230℃之一區域。According to still another embodiment of the present invention, the temperature-lowering temperature adjustment zone reduces the temperature of the semiconductor solar cell to a region lower than 230 °C.
依據本發明之再一實施例，上述之運輸裝置與高溫 處理區連通，以分別將半導體太陽能電池直接且連續地傳送至降溫調溫區。According to still another embodiment of the present invention, the above transport device and high temperature The processing zones are connected to directly and continuously transfer the semiconductor solar cells to the cooling and temperature regulating zone.
依據本發明之再一實施例，上述之加熱光源為數個長型燈管，且這些長型燈管垂直第一電池運輸通道與第二電池運輸通道。According to still another embodiment of the present invention, the heating source is a plurality of long lamps, and the elongated tubes are perpendicular to the first battery transport channel and the second battery transport channel.
依據本發明之再一實施例，上述每一長型燈管橫跨第一電池運輸通道與第二電池運輸通道。According to still another embodiment of the present invention, each of the elongated lamps spans the first battery transport passage and the second battery transport passage.
依據本發明之再一實施例，上述之加熱光源為複數個長型燈管，且這些長型燈管平行第一電池運輸通道與第二電池運輸通道。According to still another embodiment of the present invention, the heating source is a plurality of long lamps, and the elongated tubes are parallel to the first battery transport channel and the second battery transport channel.
依據本發明之再一實施例，上述之加熱光源為使半導體太陽能電池在第一電池運輸通道與第二電池運輸通道中受到照度大於3000W/m2 的複數個照光元件。According to still another embodiment of the present invention, the heating source is such that the semiconductor solar cell receives a plurality of illumination elements having an illuminance greater than 3000 W/m 2 in the first battery transport channel and the second battery transport channel.
依據本發明之再一實施例，上述之加熱光源為使半導體太陽能電池在第一電池運輸通道與第二電池運輸通道中之溫度為200℃至230℃的複數個照光元件。According to still another embodiment of the present invention, the heating source is a plurality of illumination elements that cause the semiconductor solar cell to have a temperature between 200 ° C and 230 ° C in the first battery transport channel and the second battery transport channel.
依據本發明之再一實施例，上述之處理裝置更包含外罩、複數個排氣管以及複數個溫度感測器。外罩罩設在加熱光源上方。排氣管設於外罩上，且位於主處理區之上方。溫度感測器分別設於主處理區中。According to still another embodiment of the present invention, the processing device further includes a cover, a plurality of exhaust pipes, and a plurality of temperature sensors. The outer cover is placed above the heating source. The exhaust pipe is disposed on the outer casing and above the main treatment zone. Temperature sensors are respectively disposed in the main processing area.
依據本發明之再一實施例，上述之處理裝置更包含外罩罩設在加熱光源上方，其中外罩穿設有複數個排氣孔散佈在主處理區上方。According to still another embodiment of the present invention, the processing device further includes an outer cover disposed above the heating source, wherein the outer cover is provided with a plurality of exhaust holes distributed over the main processing area.
依據本發明之再一實施例，上述之排氣孔在每一主 處理區之中間區域的開孔尺寸較大。According to still another embodiment of the present invention, the vent hole is in each main The opening area of the middle portion of the treatment zone is large.
依據本發明之再一實施例，上述之排氣孔在每一主處理區之中間區域的開孔密度較大。According to still another embodiment of the present invention, the vent hole has a larger opening density in an intermediate portion of each of the main processing zones.
依據本發明之再一實施例，上述之處理裝置更包含複數個照度計以及複數個活動遮板。照度計可升降地設於運輸裝置之下方。活動遮板分別設於照度計之上方，以隔開照度計與加熱光源。According to still another embodiment of the present invention, the processing device further includes a plurality of illuminometers and a plurality of movable shutters. The illuminometer can be raised and lowered below the transport device. The movable shutters are respectively arranged above the illuminometer to separate the illuminometer and the heating source.
依據本發明之再一實施例，上述之處理裝置更包含複數個電流偵測器，分別與加熱光源電性連接。According to still another embodiment of the present invention, the processing device further includes a plurality of current detectors electrically connected to the heating light source.
依據本發明之再一實施例，上述之處理裝置更包含蓋板，其中加熱光源固定於蓋板之底面下。According to still another embodiment of the present invention, the processing apparatus further includes a cover plate, wherein the heating light source is fixed under the bottom surface of the cover plate.
依據本發明之再一實施例，上述之蓋板係一可掀式蓋板。According to still another embodiment of the present invention, the cover plate is a cover plate.
依據本發明之再一實施例，上述之蓋板可翻轉地設於反射隔板上。According to still another embodiment of the present invention, the cover plate is reversibly disposed on the reflective partition.
依據本發明之再一實施例，上述之蓋板係抽取式蓋板。According to still another embodiment of the present invention, the cover plate is a removable cover.
依據本發明之再一實施例，上述之處理裝置更包含散熱流體管路設於第一電池運輸通道與第二電池運輸通道之相鄰之反射隔板之間。According to still another embodiment of the present invention, the processing device further includes a heat dissipating fluid line disposed between the first battery transport channel and the adjacent reflective baffle of the second battery transport channel.
100‧‧‧處理裝置100‧‧‧Processing device
100a‧‧‧處理裝置100a‧‧‧Processing device
100b‧‧‧處理裝置100b‧‧‧Processing device
100c‧‧‧處理裝置100c‧‧‧Processing device
100d‧‧‧處理裝置100d‧‧‧Processing device
100e‧‧‧處理裝置100e‧‧‧Processing device
102‧‧‧半導體太陽能電池102‧‧‧Semiconductor solar cells
104a‧‧‧電池運輸通道104a‧‧‧Battery transport channel
104b‧‧‧電池運輸通道104b‧‧‧Battery transport channel
104c‧‧‧電池運輸通道104c‧‧‧Battery transport channel
104d‧‧‧電池運輸通道104d‧‧‧Battery transport channel
104e‧‧‧電池運輸通道104e‧‧‧Battery transport channel
106‧‧‧加熱光源106‧‧‧heating light source
106a‧‧‧加熱光源106a‧‧‧heating source
106b‧‧‧加熱光源106b‧‧‧heating source
108‧‧‧運輸裝置108‧‧‧Transportation device
110a‧‧‧反射隔板110a‧‧‧reflecting partition
110b‧‧‧反射隔板110b‧‧‧reflecting partition
110c‧‧‧反射隔板110c‧‧‧reflecting partition
110d‧‧‧反射隔板110d‧‧‧reflecting partition
110e‧‧‧反射隔板110e‧‧·reflecting partition
112a‧‧‧反射隔板112a‧‧‧reflecting partition
112b‧‧‧反射隔板112b‧‧‧reflecting partition
112c‧‧‧反射隔板112c‧‧‧reflecting partition
112d‧‧‧反射隔板112d‧‧‧reflecting partition
112e‧‧‧反射隔板112e‧‧·reflecting partition
114‧‧‧傳輸方向114‧‧‧Transmission direction
116‧‧‧蓋板116‧‧‧ Cover
116a‧‧‧蓋板116a‧‧‧ cover
116b‧‧‧蓋板116b‧‧‧ cover
116c‧‧‧蓋板116c‧‧‧ cover
118‧‧‧外罩118‧‧‧ Cover
118a‧‧‧外罩118a‧‧‧ Cover
120‧‧‧頂板120‧‧‧ top board
120a‧‧‧頂板120a‧‧‧ top board
122‧‧‧排氣管122‧‧‧Exhaust pipe
124‧‧‧排氣孔124‧‧‧ venting holes
126‧‧‧冷卻裝置126‧‧‧Cooling device
128‧‧‧調溫區128‧‧‧Temperature zone
130‧‧‧主處理區130‧‧‧Main processing area
132‧‧‧主處理區132‧‧‧Main processing area
134‧‧‧主處理區134‧‧‧Main processing area
136‧‧‧載入裝置136‧‧‧Loading device
138‧‧‧卸載裝置138‧‧‧Unloading device
140‧‧‧溫度感測器140‧‧‧temperature sensor
142‧‧‧電流偵測器142‧‧‧ Current Detector
144‧‧‧照度計144‧‧‧ illuminance meter
146‧‧‧活動遮板146‧‧‧ activity shutter
148‧‧‧高溫處理區148‧‧‧High temperature treatment area
150‧‧‧區域150‧‧‧Area
152‧‧‧加熱元件152‧‧‧ heating element
154‧‧‧流道轉換裝置154‧‧‧Flow channel conversion device
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下： 第1圖係繪示依照本發明之一實施方式的一種處理裝置之透視圖。The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. 1 is a perspective view of a processing apparatus in accordance with an embodiment of the present invention.
第2圖係繪示依照本發明之一實施方式的一種處理裝置之組裝示意圖。2 is a schematic view showing the assembly of a processing apparatus according to an embodiment of the present invention.
第3圖係繪示依照本發明之另一實施方式的一種處理裝置之透視圖。Figure 3 is a perspective view of a processing apparatus in accordance with another embodiment of the present invention.
第4A圖與第4B係繪示依照本發明之又一實施方式的一種處理裝置之蓋板的操作示意圖。4A and 4B are schematic views showing the operation of a cover of a processing apparatus according to still another embodiment of the present invention.
第5A圖與第5B係繪示依照本發明之再一實施方式的一種處理裝置之蓋板的操作示意圖。5A and 5B are schematic views showing the operation of a cover of a processing apparatus according to still another embodiment of the present invention.
第6A圖與第6B係繪示依照本發明之再一實施方式的一種處理裝置之蓋板的操作示意圖。6A and 6B are schematic views showing the operation of a cover of a processing apparatus according to still another embodiment of the present invention.
第7圖係繪示經過本發明之一實施方式的一種處理裝置處理後與未經處理過之半導體太陽能電池因光致衰減所導致之電池效率損失比較圖。Figure 7 is a graph showing a comparison of battery efficiency loss caused by photo-induced attenuation of an untreated semiconductor solar cell after treatment by a processing apparatus according to an embodiment of the present invention.
第8A圖係繪示依照本發明之一實施方式的一種處理裝置之配置示意圖。FIG. 8A is a schematic diagram showing the configuration of a processing apparatus according to an embodiment of the present invention.
第8B圖係繪示依照本發明之另一實施方式的一種處理裝置之配置示意圖。FIG. 8B is a schematic diagram showing the configuration of a processing apparatus according to another embodiment of the present invention.
第9圖係繪示依照本發明之一實施方式的一種處理裝置之運輸裝置、照度計與活動遮板之間的位置關係示意圖。Figure 9 is a schematic view showing the positional relationship between a transport device, an illuminometer and a movable shutter of a processing apparatus according to an embodiment of the present invention.
請同時參照第1圖與第2圖，其係分別繪示依照本發明之一實施方式的一種處理裝置之透視圖與組裝示意 圖。在本實施方式中，處理裝置100可用以對許多半導體太陽能電池102進行照光加熱處理，藉此修補半導體太陽能電池102之半導體基材的缺陷。半導體太陽能電池102可為結晶矽太陽能電池。在一些例子中，半導體太陽能電池102為摻硼單晶矽太陽能電池或摻硼多晶矽太陽能電池。而處理裝置100對半導體太陽能電池102所作之照光加熱處理可在很短時間內消除半導體太陽能電池102之摻硼單晶矽基材中絕大部分的硼氧缺陷，以降低半導體太陽能電池102因光致衰減的效率損失。Please refer to FIG. 1 and FIG. 2 simultaneously, which are respectively a perspective view and an assembly diagram of a processing apparatus according to an embodiment of the present invention. Figure. In the present embodiment, the processing apparatus 100 can be used to perform illumination heating treatment on a plurality of semiconductor solar cells 102, thereby repairing defects of the semiconductor substrate of the semiconductor solar cell 102. The semiconductor solar cell 102 can be a crystalline germanium solar cell. In some examples, semiconductor solar cell 102 is a boron doped single crystal germanium solar cell or a boron doped polycrystalline germanium solar cell. The illumination heating treatment of the semiconductor solar cell 102 by the processing device 100 can eliminate most of the boron-oxygen defects in the boron-doped single crystal germanium substrate of the semiconductor solar cell 102 in a short time to reduce the light of the semiconductor solar cell 102. Attenuation loss of efficiency.
在一些實施例中，處理裝置100主要包含至少一電池運輸通道以及數個加熱光源106。在一示範例子中，如第2圖所示，處理裝置100包含多個電池運輸通道104a、104b、104c、104d與104e。這些電池運輸通道104a~104e彼此相鄰排列。在一些例子中，每個電池運輸通道104a~104e包含一運輸裝置108，且更分別包含二反射隔板110a及112a、110b及112b、110c及112c、110d及112d、與110e及112e。運輸裝置108可用以運輸半導體太陽能電池102。每個運輸裝置108可例如由一輸送帶所組成，或者可由二輸送帶所組成。當然，每個運輸裝置108亦可由數個滾輪所組成，或可由一輸送帶搭配數個滾輪所組成，本發明不在此限。In some embodiments, processing device 100 primarily includes at least one battery transport channel and a plurality of heating sources 106. In an exemplary embodiment, as shown in FIG. 2, processing device 100 includes a plurality of battery transport lanes 104a, 104b, 104c, 104d, and 104e. These battery transport passages 104a to 104e are arranged adjacent to each other. In some examples, each of the battery transport lanes 104a-104e includes a transport device 108 and further includes two reflective partitions 110a and 112a, 110b and 112b, 110c and 112c, 110d and 112d, and 110e and 112e, respectively. Transport device 108 can be used to transport semiconductor solar cells 102. Each transport device 108 can be comprised, for example, of a conveyor belt or can be comprised of two conveyor belts. Of course, each transport device 108 may also be composed of a plurality of rollers, or may be composed of a conveyor belt with a plurality of rollers, and the present invention is not limited thereto.
請再次參照第2圖，在電池運輸通道104a中，二反射隔板110a與112a分別沿著運輸裝置108之相對二側設置，即反射隔板110a與112a沿著半導體太陽能電池102 之傳輸方向114，而分別立設在運輸裝置108之相對二側，且彼此相面對。因此，由反射隔板110a與112a及運輸裝置108所構成之剖面形狀呈類U字型。同樣的，二反射隔板110b與112b分別沿著運輸裝置108之相對二側設置，而使電池運輸通道104b之剖面形狀呈類U字型。二反射隔板110c與112c分別沿著運輸裝置108之相對二側設置，而使電池運輸通道104c之剖面形狀呈類U字型。二反射隔板110d與112d分別沿著運輸裝置108之相對二側設置，而使電池運輸通道104d之剖面形狀呈類U字型。二反射隔板110e與112e分別沿著運輸裝置108之相對二側設置，而使電池運輸通道104e之剖面形狀呈類U字型。其中，反射隔板110a~110e與112a~112e係使用光反射材質，其對可見光之反射率係大於70%。在一些示範例子中，反射隔板110a~110e與112a~112e可為金屬材質。Referring again to FIG. 2, in the battery transport passage 104a, the two reflective partitions 110a and 112a are disposed along opposite sides of the transport device 108, that is, the reflective partitions 110a and 112a are along the semiconductor solar cell 102. The transmission directions 114 are respectively erected on opposite sides of the transport device 108 and face each other. Therefore, the cross-sectional shape of the reflecting partition plates 110a and 112a and the transporting device 108 is U-shaped. Similarly, the two reflective partitions 110b and 112b are respectively disposed along opposite sides of the transport device 108, so that the cross-sectional shape of the battery transport passage 104b is U-shaped. The two reflective partitions 110c and 112c are respectively disposed along opposite sides of the transport device 108, so that the cross-sectional shape of the battery transport passage 104c is U-shaped. The two reflective partitions 110d and 112d are respectively disposed along opposite sides of the transport device 108, so that the cross-sectional shape of the battery transport passage 104d is U-shaped. The two reflective partitions 110e and 112e are respectively disposed along opposite sides of the transport device 108, so that the cross-sectional shape of the battery transport passage 104e is U-shaped. Among them, the reflective spacers 110a to 110e and 112a to 112e are made of a light-reflecting material, and the reflectance to visible light is more than 70%. In some exemplary examples, the reflective spacers 110a-110e and 112a-112e may be made of a metal material.
在一些示範例子中，在處理裝置100中，任二相鄰之電池運輸通道104a~104e之間的間距約為1公分至15公分，較佳為2公分至3公分，以利散熱。舉例而言，如第2圖所示，電池運輸通道104a之反射隔板112a與相鄰電池運輸通道104b之反射隔板110b之間的間距約為2公分至3公分，其間距可根據實際處理裝置100之溫度分布及散熱條件做調整。在特定例子中，處理裝置100可選擇性地在相鄰電池運輸通道104a~104e之相鄰反射隔板，例如反射隔板112a與110b、112b與110c、112c與110d、或112d與110e之間，設置散熱流體管路，以進一步提升散熱效果。 此外，電池運輸通道104a之二反射隔板110a與112a、電池運輸通道104b之二反射隔板110b與112b、電池運輸通道104c之二反射隔板110c與112c、電池運輸通道104d之二反射隔板110d與112d、以及電池運輸通道104e之二反射隔板110e與112e之間的距離可約為17公分至20公分。In some exemplary embodiments, in the processing device 100, the spacing between any two adjacent battery transport passages 104a-104e is about 1 cm to 15 cm, preferably 2 cm to 3 cm, to facilitate heat dissipation. For example, as shown in FIG. 2, the spacing between the reflective partition 112a of the battery transport passage 104a and the reflective partition 110b of the adjacent battery transport passage 104b is about 2 cm to 3 cm, and the spacing can be handled according to actual conditions. The temperature distribution and heat dissipation conditions of the device 100 are adjusted. In a particular example, processing device 100 can be selectively between adjacent reflective barriers of adjacent battery transport lanes 104a-104e, such as reflective barriers 112a and 110b, 112b and 110c, 112c and 110d, or 112d and 110e. , set the cooling fluid pipeline to further enhance the heat dissipation effect. In addition, the two reflective partitions 110a and 112a of the battery transport passage 104a, the two reflective partitions 110b and 112b of the battery transport passage 104b, the two reflective partitions 110c and 112c of the battery transport passage 104c, and the two reflective partitions of the battery transport passage 104d. The distance between 110d and 112d, and the two reflective partitions 110e and 112e of the battery transport passage 104e may be about 17 cm to 20 cm.
加熱光源106設置在這些電池運輸通道104a~104e之上方，且位於反射隔板110a~110e與112a~112e上，以將加熱光源106所發射之光朝裝置108上的半導體太陽能電池102反射。在一些例子中，加熱光源106可為鹵素燈、氙燈或白熾燈泡。加熱光源106對半導體太陽能電池102所施加之照度範圍可例如為2500W/m2 至5000W/m2 。此外，加熱光源106可為長型燈管，如第2圖所示。或者，如第3圖所示之處理裝置100a，其係採用燈泡型之加熱光源106a來取代長型燈管之加熱光源106。在第2圖所示之例子中，加熱光源106為長型燈管，且加熱光源106可位於反射隔板110a~110e與112a~112e之上方、或穿設於反射隔板110a~110e與112a~112e之頂部。在第3圖所示之例子中，加熱光源106a為燈泡型，因此加熱光源106a可位於反射隔板110a~110e與112a~112e之上方、或完全位於電池運輸通道104a~104e內。A heating source 106 is disposed above the battery transport channels 104a-104e and on the reflective baffles 110a-110e and 112a-112e to reflect the light emitted by the heating source 106 toward the semiconductor solar cell 102 on the device 108. In some examples, the heating source 106 can be a halogen, xenon or incandescent bulb. Heating source of their illumination range 106 applied to the semiconductor solar cell 102 may be, for example, 2500W / m 2 to 5000W / m 2. Additionally, the heating source 106 can be a long tube as shown in FIG. Alternatively, the processing apparatus 100a shown in Fig. 3 uses a bulb-type heating source 106a instead of the heating source 106 of the elongated tube. In the example shown in FIG. 2, the heating source 106 is a long lamp, and the heating source 106 may be located above the reflective partitions 110a-110e and 112a-112e or through the reflective partitions 110a-110e and 112a. The top of ~112e. In the example shown in Fig. 3, the heating source 106a is of a bulb type, so that the heating source 106a can be located above the reflecting partitions 110a-110e and 112a-112e or entirely within the battery transport passages 104a-104e.
在電池運輸通道104a~104e中，反射隔板110a~110e與112a~112e可將加熱光源106a所發出之光集中，而可進一步增加施加在半導體太陽能電池102上之溫度、照度與光均勻度。此外，可藉由調整加熱光源106a對 電池運輸通道104a~104e中之半導體太陽能電池102的距離、電池運輸通道104a~104e二側之反射隔板110a~110e與112a~112e之間的距離、及/或加熱光源106a本身之功率的方式，來控制對半導體太陽能電池102所施加之照度與溫度。在一示範例子中，反射隔板110a~110e與112a~112e的設置可使面積為15.6×15.6cm2 之單片半導體太陽能電池102內的光均勻性增加1.5倍至2倍。In the battery transport passages 104a to 104e, the reflective partitions 110a to 110e and 112a to 112e can concentrate the light emitted from the heating light source 106a, and the temperature, illuminance, and light uniformity applied to the semiconductor solar cell 102 can be further increased. In addition, the distance between the heating solar light source 106a and the semiconductor solar cells 102 in the battery transport passages 104a-104e, the distance between the reflective partitions 110a-110e and 112a-112e on both sides of the battery transport passages 104a-104e, and / or the manner in which the power of the light source 106a itself is heated to control the illuminance and temperature applied to the semiconductor solar cell 102. In an exemplary example, the separator 110a ~ 110e reflector 112a ~ 112e provided may cause light uniformity area 15.6 × 15.6cm 2 in the monolithic semiconductor solar cell 102 increased 1.5 to 2 times.
如第2圖所示，當採用長型燈管之加熱光源106時，這些加熱光源106垂直電池運輸通道104a~104e，即加熱光源106之長度延伸方向垂直電池運輸通道104a~104e之長度延伸方向，電池運輸通道104a~104e之長度延伸方向可例如平行傳輸方向114。在一些示範例子中，請再次參照第2圖，每個長型燈管之加熱光源106橫跨電池運輸通道104a~104e。在特定例子中，一長型燈管之加熱光源106可僅橫跨部分之電池運輸通道104a~104e，例如一長型燈管之加熱光源106僅橫跨電池運輸通道104a與104b、或橫跨電池運輸通道104a~104c、或橫跨電池運輸通道104c~104e，但每個電池運輸通道104a~104e上方均需有加熱光源106通過。加熱光源106垂直電池運輸通道104a~104e的設計有利於抽換加熱光源106。As shown in FIG. 2, when the heating source 106 of the long lamp is used, the heating sources 106 are perpendicular to the battery transport passages 104a-104e, that is, the length extension direction of the heating source 106 extends perpendicularly to the length of the battery transport passages 104a-104e. The length extension direction of the battery transport passages 104a-104e may be, for example, parallel to the transport direction 114. In some exemplary examples, referring again to FIG. 2, the heating source 106 of each elongated tube spans the battery transport lanes 104a-104e. In a particular example, a long lamp heating source 106 can span only a portion of the battery transport channels 104a-104e, such as a long lamp heating source 106 that spans only the battery transport channels 104a and 104b, or across The battery transport passages 104a-104c, or across the battery transport passages 104c-104e, require a heating source 106 to pass over each of the battery transport passages 104a-104e. The design of the heating source 106 vertical battery transport channels 104a-104e facilitates the replacement of the heating source 106.
請同時參照第4A圖至第5B圖，其中第4A圖與第4B圖、以及第5A圖與第5B圖係分別繪示依照本發明之二實施方式的處理裝置之蓋板的操作示意圖。當採用長型燈管之加熱光源106b時，這些加熱光源106b平行電池運輸 通道104a~104e，即加熱光源106b之長度延伸方向平行電池運輸通道104a~104e之長度延伸方向，即可例如平行傳輸方向114。在一些示範例子中，請再次參照第4B圖與第5B圖，每個電池運輸通道104a~104e可包含數個沿著傳輸方向114串接之加熱光源106b。在特定例子中，每個電池運輸通道104a~104e僅對應設有一加熱光源106b，此加熱光源106b之長度約等於對應之電池運輸通道104a~104e之長度。Please refer to FIG. 4A to FIG. 5B simultaneously, wherein FIG. 4A and FIG. 4B, and FIGS. 5A and 5B respectively illustrate operation diagrams of the cover of the processing apparatus according to the second embodiment of the present invention. When the heating source 106b of the long lamp is used, these heating sources 106b are transported in parallel with the battery. The passages 104a-104e, i.e., the length extension direction of the heating source 106b, extend parallel to the length of the battery transport passages 104a-104e, which may be, for example, a parallel transport direction 114. In some exemplary examples, referring again to FIGS. 4B and 5B, each of the battery transport lanes 104a-104e may include a plurality of heating sources 106b connected in series along the transport direction 114. In a specific example, each of the battery transport passages 104a-104e is only provided with a heating source 106b having a length equal to the length of the corresponding battery transport passages 104a-104e.
請參照下表1與表2，其係分別列示出半導體太陽能電池102經過處理裝置100之不同光照強度處理前後之電池效率差異、以及經過不同處理溫度之處理前後與對應之照光衰減測試前後的電池效率差異。其中，照光衰減測試係經過一個太陽光且溫度110℃下，10分鐘的加速光衰測試(accelerated light induced degradation，ALID)後的電池效率差異。Please refer to Table 1 and Table 2 below, which respectively show the difference in battery efficiency of the semiconductor solar cell 102 before and after the different illumination intensity treatments of the processing device 100, and before and after the treatment with different processing temperatures and before and after the corresponding illumination attenuation test. Battery efficiency differences. Among them, the illumination attenuation test is a battery efficiency difference after a 10 minute accelerated light induced degradation (ALID) under a sunlight and a temperature of 110 ° C.
由上表1可知，利用處理裝置100對半導體太陽能電池102進行三個太陽光以上的光照強度，即照度為3000W/m2 以上的照光加熱處理，對於半導體太陽能電池102之電池效率的影響較小。另外，由上表2可知，經200℃以下的處理溫度處理後，雖然半導體太陽能電池102之光致衰減較小，但處理後的電池效率損失較大。此外，經235℃以上的處理溫度處理後，雖然對於半導體太陽能電池102之效率影響不大，但光致衰減較大。As is apparent from the above Table 1, the semiconductor solar cell 102 is irradiated with three or more sunlights, i.e., an illumination having an illuminance of 3,000 W/m 2 or more, which has little influence on the battery efficiency of the semiconductor solar cell 102. . Further, as apparent from the above Table 2, after the treatment temperature of 200 ° C or lower, although the photoinduced attenuation of the semiconductor solar cell 102 is small, the battery efficiency loss after the treatment is large. Further, after the treatment at a treatment temperature of 235 ° C or higher, although the effect on the efficiency of the semiconductor solar cell 102 is not large, the photoinduced attenuation is large.
因此，在一些例子中，加熱光源106為使半導體太陽能電池102在電池運輸通道104a~104e中受到照度大於3000W/m2 的照光元件，即半導體太陽能電池102之照光加熱處理的照度控制在大於3000W/m2 。此外，加熱光源106可為使半導體太陽能電池102在電池運輸通道104a~104e中之溫度維持在200℃至230℃的照光元件，即半導體太陽能電池102之照光加熱處理係使半導體太陽能電池102之溫度維持在200℃至230℃。Therefore, in some examples, the heating source 106 is such that the semiconductor solar cell 102 receives an illumination component having an illumination of greater than 3000 W/m 2 in the battery transport channels 104a-104e, that is, the illumination of the semiconductor solar cell 102 is controlled to be greater than 3000 W. /m 2 . In addition, the heating source 106 may be an illumination element that maintains the temperature of the semiconductor solar cell 102 in the battery transport channels 104a-104e at 200 ° C to 230 ° C, that is, the illumination heating process of the semiconductor solar cell 102 causes the temperature of the semiconductor solar cell 102 Maintained at 200 ° C to 230 ° C.
在一些示範例子中，於半導體太陽能電池102完成製程後，利用處理裝置100對這些半導體太陽能電池102進行照度大於3000W/m2 且溫度維持在200℃至230℃的照光加熱處理，可在降低或不影響半導體太陽能電池102之電池效率下，於短時間內快速地消除半導體太陽能電池102之矽晶基材的缺陷，進一步達到降低半導體太陽能電池102之光致衰減的效果。在這些示範例子中，照光加熱處理的時間為約1.5分鐘至約3分鐘。由於照光加熱處理的時間可縮短至3分鐘以內，因此可以連續傳遞的方式消除半導體太陽能電池102之缺陷，故可實現量產的目標。In some exemplary examples, after the semiconductor solar cell 102 completes the process, the semiconductor solar cell 102 is subjected to illumination heating treatment with an illuminance of more than 3000 W/m 2 and a temperature maintained at 200 ° C to 230 ° C by the processing device 100, which may be reduced or Without affecting the battery efficiency of the semiconductor solar cell 102, the defects of the twinned substrate of the semiconductor solar cell 102 are quickly eliminated in a short time, and the effect of reducing the photo-induced attenuation of the semiconductor solar cell 102 is further achieved. In these exemplary examples, the illumination heat treatment time is from about 1.5 minutes to about 3 minutes. Since the time for the illuminating heat treatment can be shortened to within 3 minutes, the defects of the semiconductor solar cell 102 can be eliminated in a continuous manner, so that the target of mass production can be achieved.
請先參照第7圖，其係繪示經過本發明之一實施方式的一種處理裝置處理後與未經處理過之半導體太陽能電池因光致衰減所導致之電池效率損失比較圖。由第7圖可知，相較於未經光照加熱之半導體太陽能電池，經過處理裝置100處理後之半導體太陽能電池102具有很小的光致衰減效率損失。Referring first to FIG. 7, a comparison diagram of battery efficiency loss caused by photo-induced attenuation of an untreated semiconductor solar cell after treatment by a processing apparatus according to an embodiment of the present invention is shown. As can be seen from Fig. 7, the semiconductor solar cell 102 treated by the processing apparatus 100 has a small loss of photo-induced attenuation efficiency compared to the semiconductor solar cell which is not heated by illumination.
在一些例子中，請再次參照第2圖，處理裝置100可選擇性地包含蓋板116。蓋板116設於電池運輸通道104a~104e上方，且位於反射隔板110a~110e與112a~112e上。而加熱光源106則固定在蓋板116之底面下。在本實施方式中，除了蓋板116的型式外，可有多種不同的蓋板型式。請再次參照第4A圖與第4B圖，處理裝置100b之蓋板116a為可掀式蓋板。欲進行處理裝置100b之加熱光源106b的更換時，可如第4B圖般，直接將蓋板116a掀開， 再更換加熱光源106b。In some examples, referring again to FIG. 2, the processing device 100 can optionally include a cover plate 116. The cover plate 116 is disposed above the battery transport passages 104a-104e and on the reflective partitions 110a-110e and 112a-112e. The heating source 106 is fixed under the bottom surface of the cover plate 116. In this embodiment, in addition to the type of cover 116, a variety of different cover patterns are possible. Referring again to FIGS. 4A and 4B, the cover plate 116a of the processing device 100b is a coverable cover. When the heating source 106b of the processing device 100b is to be replaced, the cover plate 116a can be directly opened as shown in FIG. 4B. The heating light source 106b is replaced.
另外，請再次參照第5A圖與第5B圖，處理裝置100c之蓋板116b為可翻轉式蓋板，且蓋板116b係可轉動地設置在反射隔板110a與110b上。欲進行處理裝置100c之加熱光源106b的更換時，可如第5B圖般，直接轉動蓋板116b，來更換加熱光源106b。請參照第6A圖與第6B圖，處理裝置100d之蓋板116c為抽取式蓋板，且蓋板116c可在反射隔板110a~110e與112a~112e的上方朝與半導體太陽能電池102之傳輸方向114非平行，例如垂直的方向移動。欲進行處理裝置100d之加熱光源106a的更換時，可如第6B圖般，先直接將蓋板116c從反射隔板110a~110e與112a~112e之上方朝與半導體太陽能電池102之傳輸方向114非平行的方向抽出，再來進行加熱光源106a的更換。In addition, referring again to FIGS. 5A and 5B, the cover plate 116b of the processing device 100c is a reversible cover plate, and the cover plate 116b is rotatably disposed on the reflective partitions 110a and 110b. When the heating source 106b of the processing apparatus 100c is to be replaced, the cover plate 116b can be directly rotated as in Fig. 5B to replace the heating source 106b. Referring to FIGS. 6A and 6B, the cover plate 116c of the processing device 100d is a removable cover plate, and the cover plate 116c can face the transmission direction of the semiconductor solar cell 102 above the reflective spacers 110a-110e and 112a-112e. 114 is non-parallel, such as moving in a vertical direction. When the heating source 106a of the processing apparatus 100d is to be replaced, the cover 116c may be directly directed from above the reflective partitions 110a to 110e and 112a to 112e toward the transmission direction 114 of the semiconductor solar cell 102 as in FIG. 6B. The parallel direction is extracted, and the replacement of the heating source 106a is performed.
請先參照第8A圖，其係繪示依照本發明之一實施方式的一種處理裝置之配置示意圖。在一些實施例中，處理裝置100之每個電池運輸通道104a~104e均可區分有入口處之調溫區128，以及緊接在調溫區128之後的一或多個主處理區，例如主處理區130、132與134，如第8A圖所示。在一些例子中，待處理之半導體太陽能電池102由前一處理設備輸送至處理裝置100，再由處理裝置100之入口前的載入裝置136一一分配至各運輸裝置108，而載入各電池運輸通道104a~104e來進行照光加熱處理。在這樣的例子中，調溫區128可為升溫調溫區，較佳為快速升溫區，以利快速提高半導體太陽能電池102之溫度。半導體太陽 能電池102經調溫區128升溫至大於180℃時，即可進入接續之主處理區130來進行照光加熱的缺陷修補處理。Please refer to FIG. 8A, which is a schematic diagram showing the configuration of a processing apparatus according to an embodiment of the present invention. In some embodiments, each of the battery transport lanes 104a-104e of the processing device 100 can be distinguished from a temperature control zone 128 at the entrance, and one or more primary processing zones immediately following the temperature control zone 128, such as a master. Processing areas 130, 132 and 134 are as shown in Figure 8A. In some examples, the semiconductor solar cells 102 to be processed are transported to the processing device 100 by the previous processing device, and then loaded into the transport devices 108 by the loading devices 136 before the entrance of the processing device 100, and loaded into the batteries. The transport passages 104a to 104e perform illumination heating treatment. In such an example, the temperature adjustment zone 128 can be a temperature rise temperature zone, preferably a rapid temperature rise zone, to facilitate rapid increase of the temperature of the semiconductor solar cell 102. Semiconductor sun When the energy source 102 is heated to a temperature greater than 180 ° C by the temperature adjustment zone 128, it can enter the continuous main processing zone 130 to perform defect repair processing for illumination heating.
在一些示範例子中，由於在照度為3000W/m2 以上的情況下，溫度大於180℃時會開始進行快速的缺陷修補反應，因此升溫之調溫區128係將半導體太陽能電池102之溫度提升至大於180℃之區域。在調溫區128中，使半導體太陽能電池102愈快升到照光加熱修補處理的溫度，例如180℃以上，半導體太陽能電池102在各電池運輸通道104a~104e中進行修補的時間愈長，如此可使得電池運輸通道104a~104e的利用率愈高。In some exemplary examples, since the rapid defect repair reaction starts when the temperature is greater than 180 ° C in the case where the illuminance is 3000 W/m 2 or more, the temperature-increasing temperature adjustment zone 128 raises the temperature of the semiconductor solar cell 102 to An area greater than 180 °C. In the temperature adjustment zone 128, the faster the semiconductor solar cell 102 is raised to the temperature of the illumination heat repair process, for example, 180 ° C or more, the longer the semiconductor solar cell 102 is repaired in each of the battery transport channels 104a to 104e, so that The higher the utilization rate of the battery transport passages 104a to 104e.
在一示範例子中，升溫之調溫區128中之加熱光源106與運輸裝置108之間的距離小於位於主處理區130、132與134中之加熱光源106與運輸裝置108之間的距離，以提升調溫區128之加熱光源106對半導體太陽能電池102之照度，進而使半導體太陽能電池102能快速升溫。在另一示範例子中，每個電池運輸通道104a~104e之調溫區128可設置額外之加熱元件152，以搭配調溫區128中之加熱光源106，來使半導體太陽能電池102快速升溫。在又一示範例子中，可將各調溫區128中之加熱光源106的功率調高，或在各調溫區128中使用更高功率的加熱光源106，以利快速提高半導體太陽能電池102之溫度。In an exemplary embodiment, the distance between the heating source 106 in the warming zone 128 and the transport 108 is less than the distance between the heating source 106 and the transport 108 located in the main processing zones 130, 132 and 134. The illumination of the semiconductor light source 102 by the heating source 106 of the temperature adjustment zone 128 is increased, thereby enabling the semiconductor solar cell 102 to rapidly heat up. In another exemplary example, the temperature adjustment zone 128 of each of the battery transport channels 104a-104e may be provided with an additional heating element 152 to match the heating source 106 in the temperature control zone 128 to rapidly heat the semiconductor solar cell 102. In yet another exemplary example, the power of the heating source 106 in each of the temperature control zones 128 may be increased, or a higher power heating source 106 may be used in each of the temperature control zones 128 to facilitate rapid increase of the semiconductor solar cell 102. temperature.
在另一些例子中，請參照第8B圖，處理裝置100e可接續設置在半導體太陽能電池102之電極漿料印刷後的高溫燒結爐管設備之後，此時處理裝置100e可省略處理裝 置100之載入裝置136，且各電池運輸通道104a~104e之運輸裝置108與高溫爐管設備之高溫處理區148連通，以利將經高溫處理區148高溫處理過之半導體太陽能電池102直接且連續地傳送至對應之電池運輸通道104a~104e。在這樣的例子中，調溫區128可為降溫調溫區，其中調溫區128位於主處理區130、132與134之前，並介於高溫處理區148與主處理區130之間。此外，在這些例子中，處理裝置100e可設有流道轉換裝置154，以根據處理裝置100e之運輸裝置108的數量，而將來自高溫處理區148之半導體太陽能電池102分派到各運輸裝置108上。各運輸裝置108將來自高溫處理區148且經流道轉換裝置154分派之半導體太陽能電池102直接而連續地送至對應之調溫區128中。在一些示範例子中，降溫之調溫區128係為將半導體太陽能電池102之溫度降溫至230℃以下之區域。半導體太陽能電池102經調溫區128降溫至230℃以下時，即可進入接續之主處理區130來進行照光加熱的缺陷修補處理。因此，在這樣的例子中，可省下快速升溫區的設置，而省略升溫過程，進而可縮短製程時間。在特定例子中，各調溫區128中可額外設置降溫裝置，以利縮短半導體太陽能電池102之降溫時間。In other examples, referring to FIG. 8B, the processing device 100e can be successively disposed after the high temperature sintering furnace tube device after the electrode slurry of the semiconductor solar cell 102 is printed. At this time, the processing device 100e can omit the processing device. The loading device 136 of 100 is disposed, and the transport device 108 of each of the battery transport channels 104a-104e is in communication with the high temperature processing region 148 of the high temperature furnace tube device to facilitate direct processing of the semiconductor solar cell 102 that has been subjected to high temperature treatment by the high temperature processing region 148. Continuously transmitted to the corresponding battery transport passages 104a-104e. In such an example, the temperature control zone 128 can be a temperature drop zone, wherein the temperature zone 128 is located before the main process zones 130, 132, and 134 and between the high temperature process zone 148 and the main process zone 130. Moreover, in these examples, the processing device 100e may be provided with a flow path switching device 154 to dispatch the semiconductor solar cells 102 from the high temperature processing region 148 to the respective transport devices 108 in accordance with the number of transport devices 108 of the processing device 100e. . Each transport device 108 delivers the semiconductor solar cells 102 from the high temperature processing zone 148 and distributed via the flow channel switching device 154 directly and continuously to the corresponding temperature control zone 128. In some exemplary examples, the temperature-regulating zone 128 is a zone that cools the temperature of the semiconductor solar cell 102 to below 230 °C. When the semiconductor solar cell 102 is cooled to 230 ° C or lower by the temperature adjustment zone 128, it can enter the continuous main processing zone 130 to perform defect repair processing for illumination heating. Therefore, in such an example, the setting of the rapid temperature rise zone can be saved, and the temperature rise process can be omitted, thereby shortening the process time. In a specific example, a temperature reducing device may be additionally provided in each temperature regulating area 128 to shorten the cooling time of the semiconductor solar cell 102.
請再次參照第8A圖，經調溫區128升溫或降溫後，半導體太陽能電池102先進入主處理區130，接著依序經過主處理區132與134，來進行照光加熱處理，來修補半導體太陽能電池102之缺陷，有效改善光致衰減所導致之電池 效率下降的問題，進而可提升半導體太陽能電池102之效率。請同時參照第2圖與第8A圖，處理裝置100更可包含冷卻裝置126設於主處理區134後，以冷卻完成照光加熱處理後之半導體太陽能電池102，而將半導體太陽能電池102之溫度降至室溫，以利後續收片作業的進行。運輸裝置108接著將半導體太陽能電池102運送至卸載裝置138，而將完成照光加熱處理並經冷卻的半導體太陽能電池102移出處理裝置100，而完成半導體太陽能電池102的缺陷修補製程。Referring again to FIG. 8A, after the temperature adjustment zone 128 is heated or cooled, the semiconductor solar cell 102 first enters the main processing zone 130, and then passes through the main processing zones 132 and 134 in sequence to perform illumination heating treatment to repair the semiconductor solar cell. 102 defects, effectively improve the battery caused by photo-induced attenuation The problem of reduced efficiency further increases the efficiency of the semiconductor solar cell 102. Referring to FIG. 2 and FIG. 8A simultaneously, the processing apparatus 100 further includes a cooling device 126 disposed in the main processing area 134 to cool the semiconductor solar cell 102 after the illumination heating process is completed, and the temperature of the semiconductor solar cell 102 is lowered. To room temperature, in order to facilitate the subsequent filming operation. The transport device 108 then transports the semiconductor solar cell 102 to the unloading device 138, and removes the illuminating heat treatment and the cooled semiconductor solar cell 102 out of the processing device 100 to complete the defect repair process of the semiconductor solar cell 102.
在一些例子中，請再次參照第1圖、第2圖與第8A圖，處理裝置100可選擇性包含外罩118、數個排氣管122與數個溫度感測器140。外罩118可罩設在所有加熱光源106上方，並可遮蓋住所有之電池運輸通道104a~104e。排氣管122可設置在外罩118之頂板120中，並貫穿頂板120而與外罩118內之空間連通。在一些示範例子中，每個排氣管122可設有閥門，藉由調整閥門的啟閉與開啟的程度，可控制由排氣管122抽出之氣流大小。在特定例子中，排氣管122設置在主處理區130、132與134之上方。In some examples, referring again to FIGS. 1 , 2 , and 8A , the processing device 100 can optionally include a housing 118 , a plurality of exhaust tubes 122 , and a plurality of temperature sensors 140 . The cover 118 can be placed over all of the heating sources 106 and can cover all of the battery transport channels 104a-104e. The exhaust pipe 122 may be disposed in the top plate 120 of the outer casing 118 and communicate with the space within the outer casing 118 through the top plate 120. In some exemplary examples, each of the exhaust pipes 122 may be provided with a valve that controls the amount of air flow drawn by the exhaust pipe 122 by adjusting the degree of opening and closing of the valve. In a particular example, exhaust pipe 122 is disposed above main processing zones 130, 132, and 134.
溫度感測器140分別設於各電池運輸通道104a~104e之主處理區130、132與134中，用以偵測這些主處理區130、132與134之溫度。當一溫度感測器140所偵測之溫度過高時，此溫度感測器140發出訊號，並經回饋控制後而將此溫度感測器140上方或附近的排氣管122打開或將原本已開啟之排氣管122的閥門開大，使此區域 之氣流量增加，來降低此區域的溫度。反之，當一溫度感測器140所偵測之溫度較低時，此溫度感測器140發出訊號，並經回饋控制後而將此溫度感測器140上方或附近的排氣管122關閉或將原本已開啟之排氣管122的閥門關小，使此區域之氣流量縮減，來提升此區域的溫度。The temperature sensors 140 are respectively disposed in the main processing areas 130, 132 and 134 of the battery transport channels 104a-104e for detecting the temperatures of the main processing areas 130, 132 and 134. When the temperature detected by the temperature sensor 140 is too high, the temperature sensor 140 sends a signal, and after the feedback control, the exhaust pipe 122 above or near the temperature sensor 140 is turned on or the original The valve of the opened exhaust pipe 122 is opened to make this area The gas flow is increased to lower the temperature in this area. On the other hand, when the temperature detected by the temperature sensor 140 is low, the temperature sensor 140 sends a signal, and after the feedback control, the exhaust pipe 122 above or near the temperature sensor 140 is turned off or The valve of the originally opened exhaust pipe 122 is closed to reduce the air flow in this area to increase the temperature in this area.
該排氣管122不限於用以將主處理區130、132與134之熱空氣排出，亦可用來將外界冷空氣導入至主處理區130、132與134，直接降低該區域的溫度。同樣的，可藉由調整排氣管122的閥門的啟閉與開啟的程度，控制由排氣管122導入之冷空氣氣流大小。The exhaust pipe 122 is not limited to exhaust hot air for the main processing zones 130, 132 and 134, and may also be used to introduce outside cold air into the main processing zones 130, 132 and 134 to directly lower the temperature of the zone. Similarly, the amount of cold air flow introduced by the exhaust pipe 122 can be controlled by adjusting the degree of opening and closing and opening of the valve of the exhaust pipe 122.
在另一些例子中，請再次參照第3圖與第8A圖，處理裝置100a可選擇性包含外罩118a。外罩118a可罩設在所有加熱光源106a上方，並可遮蓋住所有之電池運輸通道104a~104e。外罩118a中設有許多排氣孔124，這些排氣孔124可散佈在外罩118a之頂板120a中，並貫穿頂板120a而與外罩118a內之空間連通。排氣孔124可具有多種尺寸，排氣孔124之尺寸可互異，或者部分尺寸相同，另一部分尺寸不同。當然，這些排氣孔124亦可為單一尺寸。此外，排氣孔124在頂板120a中的設置密度可為不均勻，亦可為均勻設置。由於各電池運輸通道104a~104e之主處理區108的溫度通常較高，尤其是頂板120a之中間區域的溫度更高，因此在一些示範例子中，排氣孔124在各電池運輸通道104a~104e之主處理區108之中間區域的開孔尺寸較大，或者排氣孔124在各電池運輸通道104a~104e之 主處理區108之中間區域的開孔密度較大，以增加排氣量，來提升這些區域的降溫效率。在特定例子中，排氣孔124設置在主處理區130、132與134之上方。排氣孔124之形狀可相同，或可具有多種形狀，例如全部形狀不同、或部分排氣孔124之形狀相同而部分不同。In other examples, referring again to Figures 3 and 8A, the processing device 100a can optionally include a housing 118a. The cover 118a can be placed over all of the heating sources 106a and can cover all of the battery transport channels 104a-104e. A plurality of venting holes 124 are provided in the outer cover 118a. The venting holes 124 are interspersed in the top plate 120a of the outer cover 118a and communicate with the space in the outer cover 118a through the top plate 120a. The venting holes 124 can have a variety of sizes, and the venting holes 124 can be different in size, or the portions can be the same size and the other portions can be different in size. Of course, these vents 124 can also be of a single size. In addition, the arrangement density of the vent holes 124 in the top plate 120a may be uneven or uniform. Since the temperature of the main processing zone 108 of each of the battery transport lanes 104a-104e is generally higher, especially the temperature of the middle zone of the top plate 120a is higher, in some exemplary examples, the venting holes 124 are in the respective battery transport lanes 104a-104e. The central portion of the main processing zone 108 has a larger opening size, or the venting opening 124 is in each of the battery transport passages 104a-104e. The central region of the main processing zone 108 has a relatively high density of openings to increase the amount of exhaust gas to improve the cooling efficiency of these regions. In a particular example, venting holes 124 are disposed above main processing zones 130, 132, and 134. The shape of the vent holes 124 may be the same, or may have various shapes, for example, all of the shapes are different, or some of the vent holes 124 have the same shape and are partially different.
請同時參照第2圖與第9圖，其中第9圖係繪示依照本發明之一實施方式的一種處理裝置之運輸裝置、照度計與活動遮板之間的位置關係示意圖。在一些例子中，處理裝置100亦可選擇性地包含數個照度計144與數個活動遮板146。在一些示範例子中，照度計144可升降地設置在運輸裝置108之下，而活動遮板146則分別設於這些照度計144之上方，以隔開照度計144與加熱光源106，藉以避免照度計144因長時間被加熱光源106照射而導致溫度升高，進而造成照度計144壽命大幅縮減。在需使用照度計144進行半導體太陽能電池102之照度量測時，可將活動遮板146自照度計144上方移開，照度計144接著上升至運輸裝置108處的高度，即和待處理的半導體太陽能電池102上表面高度大約等同，來進行照度的測量。完成測量後，照度計144下降，再移動活動遮板146來遮住照度計144。Please refer to FIG. 2 and FIG. 9 at the same time. FIG. 9 is a schematic diagram showing the positional relationship between the transportation device, the illuminometer and the movable shutter according to an embodiment of the present invention. In some examples, processing device 100 can also optionally include a plurality of illuminometers 144 and a plurality of active shutters 146. In some exemplary examples, the illuminometer 144 is vertically disposed below the transport device 108, and the shutters 146 are disposed above the illuminometers 144, respectively, to separate the illuminometer 144 from the heating source 106 to avoid illumination. The meter 144 is heated by the heating source 106 for a long time, causing the temperature to rise, which in turn causes the life of the illuminometer 144 to be greatly reduced. When the illuminance meter 144 is used to measure the semiconductor solar cell 102, the movable shutter 146 can be removed from above the illuminometer 144, and the illuminometer 144 is then raised to the height at the transport device 108, ie, the semiconductor to be processed. The height of the upper surface of the solar cell 102 is approximately equal to measure the illuminance. After the measurement is completed, the illuminometer 144 is lowered, and the shutter 146 is moved to cover the illuminometer 144.
請再次參照第2圖與第8A圖，在一些例子中，處理裝置100可選擇性地包含數個電流偵測器142，其中這些電流偵測器142分別與加熱光源106電性連接，且用以偵測各加熱光源106之電流值。當電流偵測器142偵測到加熱光源106之電流值下降至一特定值以下時，表示此加熱 光源106之電阻上升，且此加熱光源106的效能已開始衰退。此時，可如第8A圖所示，將加熱光源106自電池運輸通道104a~104e上方抽到區域150，來進行加熱光源106之更換作業。Referring to FIG. 2 and FIG. 8A again, in some examples, the processing device 100 can selectively include a plurality of current detectors 142, wherein the current detectors 142 are electrically connected to the heating source 106, respectively. To detect the current value of each heating source 106. When the current detector 142 detects that the current value of the heating source 106 drops below a certain value, it indicates that the heating The resistance of the source 106 rises and the performance of the heating source 106 has begun to decay. At this time, as shown in FIG. 8A, the heating source 106 can be drawn from the upper side of the battery transport passages 104a to 104e to the region 150 to perform the replacement operation of the heating source 106.
由上述之實施方式可知，本發明之一優點為本發明之處理裝置係利用照光加熱處理，而可在不影響半導體太陽能電池之效率的情況下，快速消除半導體太陽能電池之缺陷，進一步降低半導體太陽能電池之光致衰減現象。It can be seen from the above embodiments that one of the advantages of the present invention is that the processing device of the present invention utilizes illumination heating treatment to quickly eliminate the defects of the semiconductor solar cell without affecting the efficiency of the semiconductor solar cell, thereby further reducing the semiconductor solar energy. Photoinduced attenuation of the battery.
由上述之實施方式可知，本發明之另一優點為本發明之處理裝置可以連續傳遞方式對半導體太陽能電池進行照光加熱處理，來消除半導體太陽能電池之缺陷，因此可實現量產的目標。According to the above-described embodiments, another advantage of the present invention is that the processing apparatus of the present invention can perform illumination heating treatment on a semiconductor solar cell in a continuous transfer manner to eliminate defects of the semiconductor solar cell, thereby achieving mass production.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何在此技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧處理裝置100‧‧‧Processing device
102‧‧‧半導體太陽能電池102‧‧‧Semiconductor solar cells
104a‧‧‧電池運輸通道104a‧‧‧Battery transport channel
104b‧‧‧電池運輸通道104b‧‧‧Battery transport channel
104c‧‧‧電池運輸通道104c‧‧‧Battery transport channel
104d‧‧‧電池運輸通道104d‧‧‧Battery transport channel
104e‧‧‧電池運輸通道104e‧‧‧Battery transport channel
106‧‧‧加熱光源106‧‧‧heating light source
108‧‧‧運輸裝置108‧‧‧Transportation device
110a‧‧‧反射隔板110a‧‧‧reflecting partition
110b‧‧‧反射隔板110b‧‧‧reflecting partition
110c‧‧‧反射隔板110c‧‧‧reflecting partition
110d‧‧‧反射隔板110d‧‧‧reflecting partition
110e‧‧‧反射隔板110e‧‧·reflecting partition
112a‧‧‧反射隔板112a‧‧‧reflecting partition
112b‧‧‧反射隔板112b‧‧‧reflecting partition
112c‧‧‧反射隔板112c‧‧‧reflecting partition
112d‧‧‧反射隔板112d‧‧‧reflecting partition
112e‧‧‧反射隔板112e‧‧·reflecting partition
114‧‧‧傳輸方向114‧‧‧Transmission direction
116‧‧‧蓋板116‧‧‧ Cover
118‧‧‧外罩118‧‧‧ Cover
120‧‧‧頂板120‧‧‧ top board
122‧‧‧排氣管122‧‧‧Exhaust pipe
126‧‧‧冷卻裝置126‧‧‧Cooling device
140‧‧‧溫度感測器140‧‧‧temperature sensor
142‧‧‧電流偵測器142‧‧‧ Current Detector
Claims (23)
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| TW103128147A TWI513028B (en) | 2014-08-15 | 2014-08-15 | Treating apparatus |
| CN201510099262.2A CN105374706A (en) | 2014-08-15 | 2015-03-06 | Processing apparatus |
| JP2015105677A JP2016042569A (en) | 2014-08-15 | 2015-05-25 | Processing device |
| KR1020150097361A KR20160021026A (en) | 2014-08-15 | 2015-07-08 | treating apparatus |
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| TW103128147A TWI513028B (en) | 2014-08-15 | 2014-08-15 | Treating apparatus |
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| TW201607072A TW201607072A (en) | 2016-02-16 |
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| KR (1) | KR20160021026A (en) |
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| CN106981441A (en) * | 2016-01-18 | 2017-07-25 | 茂迪股份有限公司 | Processing apparatus |
| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
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| TW201742259A (en) * | 2016-05-16 | 2017-12-01 | 昱晶能源科技股份有限公司 | Method of hydrogenating solar cell and the device thereof |
| TWI604630B (en) * | 2016-12-13 | 2017-11-01 | 茂迪股份有限公司 | Treating apparatus of semiconductor substrate |
| CN106876496B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN108387108B (en) * | 2018-04-02 | 2023-09-22 | 通威太阳能（安徽）有限公司 | Temperature regulating device in solar cell sintering furnace |
| CN109004061B (en) * | 2018-06-28 | 2023-07-18 | 华南理工大学 | Electric injection annealing test device and method for crystalline silicon photovoltaic solar cell |
| KR102568449B1 (en) * | 2021-06-15 | 2023-08-23 | 재단법인 구미전자정보기술원 | Apparatus for analyzing light-induced degradation and lid healing process characteristic of solar cell module and the method thereof |
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| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
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| TW201607072A (en) | 2016-02-16 |
| CN105374706A (en) | 2016-03-02 |
| KR20160021026A (en) | 2016-02-24 |
| JP2016042569A (en) | 2016-03-31 |
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