CN110102876A - A kind of cryogenic assembly recovery technique based on laser - Google Patents
A kind of cryogenic assembly recovery technique based on laser Download PDFInfo
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- CN110102876A CN110102876A CN201910360171.8A CN201910360171A CN110102876A CN 110102876 A CN110102876 A CN 110102876A CN 201910360171 A CN201910360171 A CN 201910360171A CN 110102876 A CN110102876 A CN 110102876A
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- photovoltaic module
- laser
- insulating box
- temperature
- recovery technique
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000011084 recovery Methods 0.000 title claims abstract description 24
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 15
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 230000007547 defect Effects 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000008439 repair process Effects 0.000 claims abstract description 8
- 238000013532 laser treatment Methods 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 claims description 9
- 230000007613 environmental effect Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 5
- 235000013399 edible fruits Nutrition 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 241000196324 Embryophyta Species 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000010248 power generation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to the component of photovoltaic plant decaying recovery technique fields, and disclose a kind of cryogenic assembly recovery technique based on laser, include the following steps: that S1. detects photovoltaic module pad value；S2. default attenuation data values are combined, compare whether the photovoltaic module pad value being detected in S1 reaches default pad value, if reach index, repair process is carried out to tested photovoltaic module；S3. prepare the insulating box that can adjust temperature；S4. the photovoltaic module for judging to repair in S2 is placed in the insulating box of the temperature-controllable prepared in S3；S5. laser treatment is carried out to the photovoltaic module surface being repaired using laser emitter, so that the hydrogen atom in laser active photovoltaic module, makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, make its eventual failure, to have the function that recovery component efficiency.The cryogenic assembly recovery technique based on laser, improves the service life of photovoltaic module, saves cost.
Description
Technical field
The present invention relates to the component of photovoltaic plant decaying recovery technique field, specially a kind of cryogenic assemblies based on laser
Recovery technique.
Background technique
The energy of solar energy is the energy (mainly solar energy) from outside of the earth celestial body, is the hydrogen nuclei in the sun
The huge energy that fusion discharges in superhigh temperature, the overwhelming majority of necessary for human energy is all directly or indirectly from the sun.I
The fossil fuels such as required coal, petroleum, natural gas of living all be because various plants by photosynthesis solar energy turn
Become after chemical energy stores in plant, then the animals and plants by being embedded in underground are formed by very long geological epoch.This
Outside, water energy, wind energy, wave energy, energy by ocean current etc. be also all by solar energy conversion Lai.
Photovoltaic plant, refer to it is a kind of using solar energy, using electronic components such as special material crystal silicon plate, inverters
The power generation system of composition, the photovoltaic generating system for being connected with power grid and transmitting electric power to power grid.Photovoltaic plant is to belong to state at present
Family encourages the maximum green electric power supply of dynamics to develop energy project, can be divided into the stand alone generating system with battery and without electric power storage
The grid-connected system in pond.Solar power generation is divided into photo-thermal power generation and photovoltaic power generation.The current phase enters commercialized solar-electricity
Can, what is referred to is exactly solar energy power generating.
Photovoltaic cell is important an equipment in the equipment of photovoltaic power generation, and mainstream photovoltaic cell is mono- by p-type CZ at present
Crystal silicon material is made, and can mix oxygen atom wherein because of the reason of technique during Material growth.Due to CZ battery be by
Boron doping is made, and will form boron oxygen key because of the reason of illumination and high temperature in long-term power station use to partly lead in silicon
The falling center for forming activation electronics in vivo, causes component to be decayed, annual up to 0.8%-3%.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, the cryogenic assembly recovery technique based on laser that the present invention provides a kind of, having can be
Using the hydrogen atom in the activation photovoltaic module of laser selective under low temperature condition, reach different state of charge, and Passivation of Boron
The advantages of oxygen defect makes its eventual failure, has reached the effect of recovery component efficiency solves and works as in long-term power station use
In because the reason of illumination and high temperature, will form boron oxygen key to form the falling center of activation electronics in silicon semiconductor, lead
The problem of causing component decaying.
(2) technical solution
Different electricity can be reached at low temperatures using the hydrogen atom in the activation photovoltaic module of laser selective to realize
Lotus state, and Passivation of Boron oxygen defect, make its eventual failure, have reached the purpose of the effect of recovery component efficiency, and the present invention mentions
For following technical solution: a kind of cryogenic assembly recovery technique based on laser includes the following steps:
S1. photovoltaic module pad value is detected
(1) environmental cabinet is opened, the xenon lamp for preheating full spectrum stablizes irradiation level, and preheating time is 30~60min；
(2) photovoltaic module of tested photovoltaic module and a conventional criteria is chosen；
(3) two photovoltaic modulies chosen in (2) are placed and carries out firm placement in environmental cabinet in (1), make its placement
Position, placement angle remain exactly the same；
(4) two photovoltaic modulies being placed in environmental cabinet are detected using power measuring, measures tested photovoltaic module
With the performance number of conventional criteria photovoltaic module；
(5) show that the photovoltaic module ideal power data of conventional criteria are P1, tested photovoltaic module ideal power data are
P2, conventional criteria photovoltaic module actual power data be P3, tested photovoltaic module actual power data are P4；
(6) formula is combined；The actual attenuation value of [P2-P4/(P3/P1)]/P2 you can get it tested photovoltaic module；
S2. default attenuation data values are combined, compare whether the photovoltaic module pad value being detected in S1 reaches default pad value, such as
Fruit reach index carries out repair process to tested photovoltaic module；
S3. prepare the insulating box that can adjust temperature；
S4. the photovoltaic module for judging to repair in S2 is placed in the insulating box of the temperature-controllable prepared in S3；
S5. laser treatment is carried out to the photovoltaic module surface being repaired using laser emitter, so that laser active photovoltaic module
Interior hydrogen atom makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, makes its eventual failure, to reach extensive
The effect of multiple component efficiency；
S6. the temperature for adjusting insulating box carries out the heating to photovoltaic module is repaired in the range of 200-400 degrees Celsius, heats
Time is 20~30min；
S7. after the completion of heating in S6 to the photovoltaic module being repaired, the exhaust blower that is equipped with of starting insulating box side wall makes pair
Temperature in insulating box carries out fast cooling processing, so that temperature of the temperature decrease in insulating box to room temperature；
S8. the complete reparation to photovoltaic module is repaired is completed.
Preferably, the laser wavelength range is in 800-1200m.
Preferably, the power measuring is specially portable two-channel power measuring.
Preferably, the laser emitter is specially line face laser emitter.
(3) beneficial effect
Compared with prior art, the cryogenic assembly recovery technique based on laser that the present invention provides a kind of has following beneficial to effect
Fruit:
The cryogenic assembly recovery technique based on laser, photovoltaic module to be repaired is placed in the insulating box of temperature-controllable；Benefit
Laser treatment is carried out to the photovoltaic module surface being repaired with laser emitter, so that the hydrogen in laser active photovoltaic module is former
Son makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, makes its eventual failure, to reach recovery component effect
The effect of rate；The temperature of adjustment insulating box carries out adding the heating for being repaired photovoltaic module in the range of 200-400 degrees Celsius
The hot time is 20~30min；The exhaust blower that starting insulating box side wall is equipped with makes to carry out at fast cooling the temperature in insulating box
Reason, so that the complete reparation to photovoltaic module is repaired can be completed in the temperature of temperature decrease to room temperature in insulating box, low
Using the hydrogen atom in the activation photovoltaic module of laser selective in warm situation, reach different state of charge, and Passivation of Boron oxygen
Defect makes its eventual failure, can quickly and easily have the function that recovery component efficiency, improve the use of photovoltaic module
Service life saves cost.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
A kind of cryogenic assembly recovery technique based on laser, includes the following steps:
S1. photovoltaic module pad value is detected
(1) environmental cabinet is opened, the xenon lamp for preheating full spectrum stablizes irradiation level, and preheating time is 30~60min；
(2) photovoltaic module of tested photovoltaic module and a conventional criteria is chosen；
(3) two photovoltaic modulies chosen in (2) are placed and carries out firm placement in environmental cabinet in (1), make its placement
Position, placement angle remain exactly the same；
(4) two photovoltaic modulies being placed in environmental cabinet are detected using power measuring, measures tested photovoltaic module
With the performance number of conventional criteria photovoltaic module；
(5) show that the photovoltaic module ideal power data of conventional criteria are P1, tested photovoltaic module ideal power data are
P2, conventional criteria photovoltaic module actual power data be P3, tested photovoltaic module actual power data are P4；
(6) formula is combined；The actual attenuation value of [P2-P4/(P3/P1)]/P2 you can get it tested photovoltaic module；
S2. default attenuation data values are combined, compare whether the photovoltaic module pad value being detected in S1 reaches default pad value, such as
Fruit reach index carries out repair process to tested photovoltaic module；
S3. prepare the insulating box that can adjust temperature；
S4. the photovoltaic module for judging to repair in S2 is placed in the insulating box of the temperature-controllable prepared in S3；
S5. laser treatment is carried out to the photovoltaic module surface being repaired using laser emitter, so that laser active photovoltaic module
Interior hydrogen atom makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, makes its eventual failure, to reach extensive
The effect of multiple component efficiency；
S6. the temperature for adjusting insulating box carries out the heating to photovoltaic module is repaired in the range of 200-400 degrees Celsius, heats
Time is 20~30min；
S7. after the completion of heating in S6 to the photovoltaic module being repaired, the exhaust blower that is equipped with of starting insulating box side wall makes pair
Temperature in insulating box carries out fast cooling processing, so that temperature of the temperature decrease in insulating box to room temperature；
S8. the complete reparation to photovoltaic module is repaired is completed.
Laser wavelength range is in 800-1200m.
Power measuring is specially portable two-channel power measuring.
Laser emitter is specially line face laser emitter.
In conclusion the cryogenic assembly recovery technique based on laser is somebody's turn to do, in use, photovoltaic module to be repaired is placed in temperature
It spends in controllable insulating box；Laser treatment is carried out to the photovoltaic module surface being repaired using laser emitter, so that laser swashs
Hydrogen atom in photovoltaic module living, makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, loses it permanently
Effect, to have the function that recovery component efficiency；The temperature of adjustment insulating box is carried out in the range of 200-400 degrees Celsius to being repaired
The heating of multiple photovoltaic module, heating time are 20~30min；The exhaust blower that starting insulating box side wall is equipped with, makes in insulating box
Temperature carry out fast cooling processing so that the temperature of temperature decrease to room temperature in insulating box can be completed to being repaired photovoltaic
The complete reparation of component reaches different at low temperatures using the hydrogen atom in the activation photovoltaic module of laser selective
State of charge, and Passivation of Boron oxygen defect, make its eventual failure, can quickly and easily have the function that recovery component efficiency,
The service life for improving photovoltaic module, saves cost.
It should be noted that the terms "include", "comprise" or its any other variant are intended to the packet of nonexcludability
Contain, so that the process, method, article or equipment for including a series of elements not only includes those elements, but also including
Other elements that are not explicitly listed, or further include for elements inherent to such a process, method, article, or device.
In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including the element
Process, method, article or equipment in there is also other identical elements.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. a kind of cryogenic assembly recovery technique based on laser, characterized by the following steps:
S1. photovoltaic module pad value is detected
(1) environmental cabinet is opened, the xenon lamp for preheating full spectrum stablizes irradiation level, and preheating time is 30~60min；
(2) photovoltaic module of tested photovoltaic module and a conventional criteria is chosen；
(3) two photovoltaic modulies chosen in (2) are placed and carries out firm placement in environmental cabinet in (1), make its placement
Position, placement angle remain exactly the same；
(4) two photovoltaic modulies being placed in environmental cabinet are detected using power measuring, measures tested photovoltaic module
With the performance number of conventional criteria photovoltaic module；
(5) show that the photovoltaic module ideal power data of conventional criteria are P1, tested photovoltaic module ideal power data are
P2, conventional criteria photovoltaic module actual power data be P3, tested photovoltaic module actual power data are P4；
(6) formula is combined；The actual attenuation value of [P2-P4/(P3/P1)]/P2 you can get it tested photovoltaic module；
S2. default attenuation data values are combined, compare whether the photovoltaic module pad value being detected in S1 reaches default pad value, such as
Fruit reach index carries out repair process to tested photovoltaic module；
S3. prepare the insulating box that can adjust temperature；
S4. the photovoltaic module for judging to repair in S2 is placed in the insulating box of the temperature-controllable prepared in S3；
S5. laser treatment is carried out to the photovoltaic module surface being repaired using laser emitter, so that laser active photovoltaic module
Interior hydrogen atom makes hydrogen atom reach different state of charge, and Passivation of Boron oxygen defect, makes its eventual failure, to reach extensive
The effect of multiple component efficiency；
S6. the temperature for adjusting insulating box carries out the heating to photovoltaic module is repaired in the range of 200-400 degrees Celsius, heats
Time is 20~30min；
S7. after the completion of heating in S6 to the photovoltaic module being repaired, the exhaust blower that is equipped with of starting insulating box side wall makes pair
Temperature in insulating box carries out fast cooling processing, so that temperature of the temperature decrease in insulating box to room temperature；
S8. the complete reparation to photovoltaic module is repaired is completed.
2. a kind of cryogenic assembly recovery technique based on laser according to claim 1, it is characterised in that: the laser wave
Long range is in 800-1200m.
3. a kind of cryogenic assembly recovery technique based on laser according to claim 1, it is characterised in that: the power is surveyed
Trying instrument is specially portable two-channel power measuring.
4. a kind of cryogenic assembly recovery technique based on laser according to claim 1, it is characterised in that: the laser hair
Emitter is specially line face laser emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910360171.8A CN110102876A (en) | 2019-04-30 | 2019-04-30 | A kind of cryogenic assembly recovery technique based on laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910360171.8A CN110102876A (en) | 2019-04-30 | 2019-04-30 | A kind of cryogenic assembly recovery technique based on laser |
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| CN110102876A true CN110102876A (en) | 2019-08-09 |
Family
ID=67487762
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| CN201910360171.8A Pending CN110102876A (en) | 2019-04-30 | 2019-04-30 | A kind of cryogenic assembly recovery technique based on laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
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| CN105449044A (en) * | 2015-12-30 | 2016-03-30 | 江南大学 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
| CN106353584A (en) * | 2016-08-31 | 2017-01-25 | 常州旷达阳光能源有限公司 | Method for testing attenuation value of photovoltaic module |
| CN107393971A (en) * | 2016-05-16 | 2017-11-24 | 昱晶能源科技股份有限公司 | Reply the method and its portable apparatus of the efficiency of solar module |
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2019
- 2019-04-30 CN CN201910360171.8A patent/CN110102876A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005051168A (en) * | 2003-07-31 | 2005-02-24 | Daido Steel Co Ltd | Manufacturing method of semiconductor element |
| CN102428573A (en) * | 2009-05-20 | 2012-04-25 | 纳克公司 | Back Contact Solar Cells With Effective And Efficient Design And Corresponding Patterning Processes |
| CN104811136A (en) * | 2015-04-21 | 2015-07-29 | 苏州晟思奇检测技术服务有限公司 | Test method for light attenuation of photovoltaic module |
| CN105449044A (en) * | 2015-12-30 | 2016-03-30 | 江南大学 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
| CN107393971A (en) * | 2016-05-16 | 2017-11-24 | 昱晶能源科技股份有限公司 | Reply the method and its portable apparatus of the efficiency of solar module |
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Application publication date: 20190809 |
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