CN210723078U - HIT battery annealing equipment - Google Patents
HIT battery annealing equipment Download PDFInfo
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- CN210723078U CN210723078U CN201922389295.7U CN201922389295U CN210723078U CN 210723078 U CN210723078 U CN 210723078U CN 201922389295 U CN201922389295 U CN 201922389295U CN 210723078 U CN210723078 U CN 210723078U
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Abstract
The utility model relates to a HIT battery annealing equipment. The apparatus comprises: the furnace body, the inside of furnace body is formed with holds the chamber, holds the chamber and can hold the solar wafer that the brush has silver thick liquid; the light source is connected with the furnace body and can irradiate the solar cell coated with the silver paste to anneal; wherein the wavelength range of the light source is between 300 and 750 nm; the exhaust device comprises an air inlet, an air supply port and an air exhaust port; the air inlet is arranged on the furnace body; the air inlet is communicated with an air supply port which is arranged onThe air outlet is arranged on the furnace body in the furnace body and can exhaust the gas in the furnace body. The utility model discloses increase 300 and supplant 750nm spectrum light source and shine at HIT battery top (or bottom), this setting helps the H that exists in the silicon and in the boundary layer+Conversion to H0And the effects of strengthening annealing and hydrogen passivation are realized.
Description
Technical Field
The utility model relates to a solar cell technical field especially relates to a HIT battery annealing equipment.
Background
The thickness of the HIT (Heterojunction with Intrinsic Thin-layer Heterojunction) film is 5-10 nm. The HIT solar cell is configured by sandwiching a single crystal Si sheet between a p/i type a-Si film on the light irradiation side and an i/n type a-Si film on the back side. The HIT solar photovoltaic cell substrate is mainly made of a silicon substrate; depositing a silicon nano film with high energy gap (energy band gap) on a silicon substrate, depositing a transparent conductive film on the surface layer, and forming a back surface electric field on the back surface. By optimizing the surface texture of silicon, the optical absorption loss of the Transparent Conductive Oxide (TCO) and a-Si layers can be reduced.
Due to the characteristics of low temperature, high conversion efficiency, short process time and good high temperature of the HIT battery preparation process, the material used by the HIT battery can only adopt low-temperature silver paste for printing an electrode at high temperature, and after the conductive silver paste is printed on the surface of the battery, the battery needs to be dried, and then the silver paste is effectively and conductively connected with a conductive layer (such as TCO, ITO, IWO, IMO, IC-H, ZnO and the like) by using a curing process with the temperature of not higher than 250 ℃. The traditional low-temperature silver paste curing method adopted in the industry basically adopts a hot air drying furnace body heating method, hot air circulation is mainly adopted in the hot air drying furnace body heating process during curing, hot air drying and curing are started from the surface of the paste, residual organic gas is caused to escape from the contact position of the silver paste and the surface of a solar cell, very long process time is needed for completely expelling organic gas, and cavities are formed at the contact position, so that the problems of long process time, low tensile force of a cured silver grid line and low photoelectric conversion efficiency are caused.
SUMMERY OF THE UTILITY MODEL
The utility model provides an annealing equipment for HIT battery to overcome prior art's relevant defect. The specific technical scheme is as follows:
a HIT cell annealing apparatus, comprising:
the furnace body is internally provided with a containing cavity, and the containing cavity can contain the solar cell piece brushed with silver paste;
the light source is connected with the furnace body and can irradiate the solar cell coated with the silver paste to anneal; wherein the wavelength range of the light source is between 300 and 750 nm;
the exhaust device comprises an air inlet, an air supply port and an air exhaust port; the air inlet is arranged on the furnace body; the air inlet is communicated with the air supply opening, the air supply opening is arranged in the furnace body, and the air exhaust opening is arranged on the furnace body and can exhaust gas in the furnace body.
The utility model discloses a HIT battery annealing equipment, preferably, the light source is selected from at least one in LED lamp, xenon lamp, tungsten lamp and laser;
preferably, the light intensity of the light source is not lower than 10 standard suns, and the light intensity of 1 standard sun is 1000W/h.m2。
The utility model discloses a HIT battery annealing equipment, preferably, still include: a heating device;
the heating device is arranged in the furnace body and can heat the solar cell piece brushed with the silver paste;
preferably, the heating means is an infrared light source having a wavelength in the wavelength range of 750nm to 4000 nm;
more preferably, the infrared light source is selected from at least one of quartz infrared lamp, ceramic infrared lamp, LED infrared lamp.
The utility model discloses a HIT battery annealing equipment, preferably, still include: the lamp cooling device is arranged corresponding to the light source and can cool the light source;
and/or the presence of a gas in the gas,
further comprising: and the heat insulation light-transmitting plate is arranged corresponding to the light source and can be positioned between the light source and the solar cell.
The utility model discloses a HIT battery annealing equipment, preferably, the furnace body is equipped with relative first opening and second opening in first direction;
the HIT battery annealing apparatus further includes: a conveying device; the conveying device at least comprises a conveying belt, and the conveying belt extends along the first direction and penetrates through the first opening and the second opening to penetrate through the accommodating cavity; the conveyer belt is used for bearing the weight of the brush has the solar wafer of silver thick liquid, and can drive the brush has the solar wafer of silver thick liquid to move along first direction, so that the brush has the solar wafer of silver thick liquid can by first opening gets into hold the chamber and by the second opening leaves hold the chamber.
HIT battery annealing equipment, preferably, the furnace body is formed by first furnace body part and the concatenation of second furnace body part, first opening and second opening are located between first furnace body part and the second furnace body part.
The utility model discloses a HIT battery annealing equipment, preferably, still include: the cleaning cavity is positioned in the accommodating cavity and is provided with a third opening and a fourth opening which are opposite to each other in the first direction, the third opening is communicated with the first opening, and the fourth opening is communicated with the second opening; just the conveyer belt is worn to establish in order to run through in third opening and the fourth opening clean chamber, the conveyer belt can drive the solar wafer that the brush has silver thick liquid moves along first direction, so that the brush has the solar wafer of silver thick liquid can by the third opening gets into clean chamber and by the fourth opening leaves clean chamber.
The utility model discloses a HIT battery annealing equipment, preferably, still include: a bracket and a driving device;
the conveying device further comprises a driving roller, a transmission roller and a transmission belt, wherein the driving roller and the transmission roller are rotatably connected with the bracket through a rotating shaft, the transmission belt is annular and sleeved outside the driving roller and the transmission roller, and the driving roller can rotate relative to the bracket by taking the rotating shaft as a center to drive the transmission belt to rotate;
drive arrangement includes driving motor, driving belt and drive roller, driving motor's axis with the pivot is parallel, the drive roller with driving motor's output is connected, driving belt is annular and cover and is established the drive roller with the drive roll outside, driving motor can drive the drive roller with driving motor's axis is for the center for the support rotates in order to drive driving belt operation, thereby drives the drive roll with the pivot is for the center rotates the support.
The utility model discloses a HIT battery annealing equipment, preferably, the conveyer belt is prepared by the material that specific heat capacity is less than 900J/(kg ℃) (the data when specific heat capacity is 20 ℃);
preferably, the conveyor belt is selected from at least one of PEEK, PTFE, CTFE, PVDF, PVDC, POM, PA, PS, PE, ABS, PMMA, PVF, nylon, polysulfone, PPO, epoxy, modified material, synthetic material, ceramic, carbon fiber, tungsten alloy wire.
HIT battery annealing equipment, still include: solar wafer cooling device, solar wafer cooling device sets up in the outside of furnace body, can cool off the solar wafer that there is the silver thick liquid through the brush of annealing.
The utility model discloses an increase 300 and supplant 750nm spectrum light source, shine at solar cell top (or bottom) through light sources such as extra LED lamp, xenon lamp, tungsten lamp or laser promptly, increase the spectrum back, synthesize the light intensity usually more than 10 standard sunings, and the light intensity is high more, and the effect is better, the utility model discloses the light intensity effect of testing more than 60 standard sunings can reach high standard, and illumination time control is more than 0.2 min. The method facilitates the presence of H in the silicon and in the interfacial layer+Conversion to H0And the effects of strengthening annealing and hydrogen passivation are realized.
And, the utility model discloses a heating device (infrared IR lamp) light source (like light sources such as LED lamp, xenon lamp, tungsten lamp or laser) in coordination shines at solar cell top (or bottom), can realize heterojunction solar cell low temperature silver thick liquid solidification, annealing and hydrogen passivation's function simultaneously, and what need point out is: if the infrared spectrum is independently adopted, the functions of low-temperature silver paste curing and partial annealing of the heterojunction solar cell can be realized by the IR lamp with the wavelength within the wavelength range of 750nm to 4000nm, if the light sources such as an LED lamp, a xenon lamp, a tungsten lamp or laser are independently adopted to irradiate the top (or the bottom) of the solar cell, the functions of annealing and hydrogen passivation of the heterojunction solar cell can be realized by the light sources such as the infrared IR lamp, the LED lamp, the xenon lamp, the tungsten lamp or the laser within the wavelength range of 300nm to 4000nm and the light intensity above 10 standard suns, and the functions of curing, annealing and hydrogen passivation of the low-temperature silver paste can be integrally realized by irradiating the light sources such as the infrared IR lamp, the LED lamp, the xenon lamp, the tungsten.
Of course, it is not necessary for any product or method of the invention to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the HIT battery annealing apparatus provided by the present invention.
The reference numbers are as follows:
a: brushing a solar cell with silver paste;
101: a furnace body;
102: a light source;
103: an exhaust device;
104: an air inlet;
105: an air supply port;
106: an air outlet;
107: a heating device;
108: a lamp cooling device;
109: heat-insulating light-transmitting plates;
110: a conveying device;
111: a first furnace body section;
112: a second furnace body section;
113: cleaning the cavity;
114: a support;
115: a drive device;
116: a drive roll;
117: a driving roller;
118: a transfer belt;
119: a drive motor;
120: a drive belt;
121: a drive roller;
122: a solar cell cooling device.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it should be understood that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
In conjunction with fig. 1, the present embodiment provides a HIT battery annealing apparatus, including:
the furnace comprises a furnace body 101, wherein a containing cavity is formed inside the furnace body 101, and the containing cavity can contain a solar cell piece brushed with silver paste;
the light source 102 is connected with the furnace body 101, and can irradiate the solar cell coated with the silver paste for annealing; wherein the wavelength range of the light source 102 is between 300 and 750 nm;
an exhaust device 103 including an air inlet 104, an air supply port 105, and an air discharge port 106; the air inlet 104 is arranged on the furnace body 101; the air inlet 104 is communicated with an air supply opening 105, the air supply opening 105 is arranged in the furnace body 101, and the air exhaust opening 106 is arranged on the furnace body 101 and can exhaust the gas in the furnace body 101.
In this embodiment, the inside of furnace body 101 is formed with and holds the chamber, holds the chamber and can hold the solar wafer that the brush has the silver thick liquid in any form, for example adopt place, hang or mode such as conveyer belt transport all within the protection scope of this embodiment.
The solar cell piece brushed with the silver paste can be provided with a preset thickness as an explanation: the preset thickness is set according to the conductivity of the silver paste and the performance of the HIT battery to be prepared, and the preset thickness can enable the silver paste to achieve the required conductivity after being cured, wherein the silver paste generally comprises flake silver powder in different forms, different resin bodies, surface dispersing agents and organic matters, wherein the flake silver powder is prepared under different conditions.
As can be understood by those skilled in the art, the HIT cell annealing equipment is also provided with a gas distribution pipeline. The gas inlet 104 is generally provided with a gas inlet pipe, one end of the gas inlet pipe is located at the outer side of the furnace body 101, the other end of the gas inlet pipe penetrates through the wall of the furnace body 101 and is connected with one end of a gas distribution pipeline, the other end of the gas distribution pipeline is connected with a gas feed opening 105, the gas feed opening 105 is arranged in the furnace body 101, organic gas generated by the solar cell is discharged through atmosphere gas of the gas distribution pipeline, the atmosphere gas is fed into the gas distribution pipeline through the gas inlet 104/gas inlet pipe, and the atmosphere gas in the gas distribution channel is distributed into the furnace body 101 through the gas feed opening 105, so that the atmosphere gas is beneficial to carrying and discharging organic gas volatilized by silver paste, and can also take away certain heat to achieve the purpose of cooling the solar cell; the organic gas carried by the atmosphere gas is then exhausted through the exhaust port 106, wherein the exhaust port 106 may be provided with a fan or any exhaust device acceptable in the art for exhausting the gas in the furnace body 101. In addition, there may be one or at least two of the air inlets 104, the air inlets 105, and the air outlets 106 in this embodiment, and any arrangement acceptable in the art (such as a linear arrangement, a staggered arrangement, or the like) should fall within the protection scope of this embodiment.
The light source 102 is connected to the furnace body 101, and any connection manner of the light source 102 inside or outside the furnace body 101 or any other acceptable connection manner is covered, so that only the condition that the light source 102 can irradiate the solar cell coated with silver paste for annealing is required. Those skilled in the art will appreciate the scope encompassed by the above-described embodiments and the ability to carry out the above-described functions. In addition, the number of the light sources 102 in this embodiment may be one or at least two, which is not limited specifically.
Therefore, the accommodating cavity of the furnace body 101 accommodates the solar cell coated with silver paste to be annealed, and annealing is completed under the irradiation of the light source 102; annealing with the apparatus of this example facilitated the presence of H in the silicon and in the interfacial layer+Conversion to H0And the effects of strengthening annealing and hydrogen passivation are realized. And the efficiency of the battery plate Eff is further improved by at least 0.1 percent through verification. In the annealing process, the exhaust device 103 inputs an atmosphere gas into the furnace body 101 to assist in discharging an organic gas during annealing of the solar cell.
Moreover, the exhaust device 103 can effectively cool the solar cell while providing the atmosphere gas.
In the HIT battery annealing apparatus of the embodiment, preferably, the light source 102 is at least one selected from an LED lamp, a xenon lamp, a tungsten lamp, and a laser;
preferably, the light intensity of the light source 102 is not lower than 10 standard suns, and the light intensity of 1 standard sun is 1000W/h.m2(ii) a More preferably, the light source 102 has a light intensity of 50-60 standard suns.
The intensity of the light source 102 is verified, and the efficiency of the battery cell can be remarkably improved. In particular, the Eff efficiency can be improved to more than 0.15%.
The HIT battery annealing apparatus according to this embodiment preferably further includes: a heating device 107;
the heating device 107 is arranged in the furnace body 101, and can heat the solar cell piece brushed with the silver paste.
The solar cell piece that has the silver thick liquid of brush in to furnace body 101 through heating device 107 heats, is favorable to the brush to have the even heating of the solar cell piece of silver thick liquid, and in addition, heating device 107's heating region can set up several heating warm area to reach processes such as gradient heating. And the cooling function of the exhaust device 103 is cooperated, so that the solar cell can be effectively solidified at a proper process temperature.
Preferably, the heating device 107 is an infrared light source with a wavelength in the wavelength range of 750nm to 4000 nm.
Through verification, the infrared light in the specific wavelength range is far more beneficial to curing the solar cell, so that the functions of synchronous annealing and curing of the HIT cell annealing equipment in the embodiment are realized.
More preferably, the infrared light source is selected from at least one of quartz infrared lamp, ceramic infrared lamp, LED infrared lamp, and the like.
The HIT battery annealing apparatus according to this embodiment preferably further includes: and a lamp cooling device 108 provided corresponding to the light source 102 and capable of cooling the light source 102.
For explanation and explanation, the corresponding arrangement of the lamp cooling device 108 and the light source 102 means that the lamp cooling device 108 is arranged at a position capable of cooling the light source 102.
Therefore, during the operation of the HIT battery annealing apparatus according to the embodiment, the light source 102 may generate heat when being turned on, so as to affect the preset temperature of the heating device 107, and therefore, the lamp cooling device 108 is additionally arranged to prevent the temperature generated by the light source 102 from affecting the annealing or curing of the solar cell as much as possible.
The HIT battery annealing apparatus according to this embodiment preferably further includes: and the heat insulation light-transmitting plate 109 is arranged corresponding to the light source 102 and can be positioned between the light source 102 and the solar cell brushed with silver paste.
The position that sets up of thermal-insulated light-passing board 109 can be optional position, only needs to satisfy the messenger light source 102 can't shine the brush has the solar wafer of silver thick liquid, light of light source 102 need pass through earlier thermal-insulated light-passing board 109 back shine again on the brush has the solar wafer of silver thick liquid.
In the HIT battery annealing apparatus of this embodiment, preferably, the furnace body 101 is provided with a first opening and a second opening opposite to each other in a first direction;
the HIT battery annealing apparatus further includes: a transfer device 110; the conveying device 110 at least comprises a conveyor belt, the conveyor belt extends along the first direction and penetrates through the first opening and the second opening to penetrate through the accommodating cavity; the conveyer belt is used for bearing the weight of the brush has the solar wafer of silver thick liquid, and can drive the brush has the solar wafer of silver thick liquid to move along first direction, so that the brush has the solar wafer of silver thick liquid can by first opening gets into hold the chamber and by the second opening leaves hold the chamber.
Therefore, automatic curing and annealing of the HIT cell can be effectively realized.
In the HIT battery annealing apparatus of the embodiment, preferably, the furnace body 101 is formed by splicing a first furnace body part 111 and a second furnace body part 112, and the first opening and the second opening are located between the first furnace body part 111 and the second furnace body part 112.
The HIT battery annealing apparatus according to this embodiment preferably further includes: the clean cavity 113 is positioned in the accommodating cavity and is provided with a third opening and a fourth opening which are opposite to each other in the first direction, the third opening is communicated with the first opening, and the fourth opening is communicated with the second opening; just the conveyer belt is worn to establish in order to run through in third opening and the fourth opening clean chamber 113, the conveyer belt can drive the solar wafer that the brush has silver thick liquid moves along first direction, so that the brush has the solar wafer of silver thick liquid can by the third opening gets into clean chamber 113 and by the fourth opening leaves clean chamber 113.
Thus, the clean chamber 113 is provided to promote an environment for annealing and curing of the HIT cell, reducing the generation of impurities.
The HIT battery annealing apparatus according to this embodiment preferably further includes: a bracket 114 and a drive device 115;
the conveying device 110 further comprises a driving roller 116, a transmission roller 117 and a transmission belt 118, wherein the driving roller 116 and the transmission roller 117 are rotatably connected with the bracket 114 through a rotating shaft, the transmission belt 118 is annular and is sleeved outside the driving roller 116 and the transmission roller 117, and the driving roller 116 can rotate relative to the bracket 114 by taking the rotating shaft as a center to drive the transmission belt 118 to operate;
The transfer device 110 further comprises at least: a transfer unit bracket 114, a first drive roller, a sliding bearing seat, a spring and a limit screw.
The transmission unit support 114 has a limiting groove, the sliding bearing seat is at least partially disposed in the limiting groove, and the roller head of the first driving roller is located in the limiting groove and abuts against the bearing surface of the sliding bearing seat.
The limit screw penetrates through the transmission unit support 114 and penetrates through the sliding bearing seat, the spring sleeve is arranged on the limit screw, the direction of the limit screw is perpendicular to the direction of the first transmission roller, the bearing surface of the sliding bearing seat is equal to the groove surface of the limit groove, and the groove surface of the limit groove is larger than the contact surface of the roller head of the first transmission roller and the sliding bearing seat.
The two operating states of the transfer device 110 include: the spring is in the original length state of spring, has gapped state between slip bearing frame and the spacing recess, and transmission belt is in lax state this moment, and transmission belt 118 of lax state is easy to assemble.
The stop screw rotates, the spring is in a spring compression state, the first drive roller moves the gap length distance to the center of gravity of the transfer unit support 114 through the bearing between the bearing surface and the roller head of the first drive roller, the sliding bearing seat is attached to the stop groove, the transmission belt 118 is in a tensioning state at the moment, and the transmission belt 118 in the tensioning state is beneficial to normal transmission of the belt.
In the HIT battery annealing equipment, the conveyor belt is preferably made of a material with specific heat capacity lower than 900J/(kg DEG C) (data when the specific heat capacity is 20 ℃);
preferably, the conveyor belt is selected from PEEK (Polyetheretherketone), PTFE (Polytetrafluoroethylene), CTFE (chlorotrifluoroethylene), PVDF (Polyvinylidene fluoride), PVDC (Polyvinylidene chloride), POM (Polyoxymethylene), PA (polyamide), PS (Polystyrene), PE (Polyethylene), ABS (Acrylonitrile Butadiene Styrene), PMMA (polymethyl methacrylate), PVF (Polyvinyl formal, Polyvinyl fluoride), nylon (nylon), polysulfone (poly-sufone), polyphenylene oxide, epoxy, and the like, wherein the material may be a synthetic material, such as a plastic, a synthetic material, the material of the transmission belt may further include various modified materials, such as modified PA (polyamide) material, modified PP (Polypropylene) material, modified PC (Polycarbonate) material, modified ABS (Acrylonitrile-styrene-butadiene copolymer) material, modified PBT (polybutylene terephthalate) material, and the like. In this embodiment, all materials that need to meet the conditions of temperature resistance exceeding the process temperature, cleanness, and low heat capacity are selected for the material of the conveyor belt, and all belong to the protection scope of this embodiment, which is not an example. The characteristic of cleanness does not cause pollution which affects electrical performance or appearance of the contact surface of the solar cell, and the characteristic of low heat capacity does not affect temperature rise, temperature drop and temperature gradient of the solar cell, so that the HIT cell can be more stably solidified and annealed.
The HIT battery annealing apparatus according to this embodiment further includes: the solar cell cooling device 122 is arranged outside the furnace body 101, and the solar cell cooling device 122 can cool the solar cell with the silver paste by the annealed brush.
The solar cell cooling device 122 may be air-cooled, water-cooled or any other cooling device accepted in the art. This is not particularly limited.
Therefore, the solar cell is cooled after the process of solidifying the solar cell, and the next process operation can be favorably carried out.
This embodiment is through increasing spectrum light source 102 of 300-. The method facilitates the presence of H in the silicon and in the interfacial layer+Conversion to H0And the effects of strengthening annealing and hydrogen passivation are realized.
In this embodiment, the heating device 107 (infrared IR lamp) and the light source 102 (such as LED lamp, xenon lamp, tungsten lamp or laser light source 102) are irradiated on the top (or bottom) of the solar cell, so that the functions of low-temperature silver paste curing, annealing and hydrogen passivation of the heterojunction solar cell can be simultaneously realized, and it should be noted that: if the infrared spectrum is independently adopted, the functions of low-temperature silver paste curing and partial annealing of the heterojunction solar cell can be realized by the IR lamp with the wavelength ranging from 750nm to 4000nm, if the light sources 102 such as an LED lamp, a xenon lamp, a tungsten lamp or laser are independently adopted to irradiate the top (or the bottom) of the solar cell, the functions of annealing and hydrogen passivation of the heterojunction solar cell can be realized by the light intensity of more than 10 standard suns with the wavelength ranging from 300nm to 4000nm, and the functions of curing, annealing and hydrogen passivation of the low-temperature silver paste can be integrally realized by irradiating the light sources 102 such as the infrared IR lamp, the LED lamp, the xenon lamp, the tungsten lamp or the laser at the top (or the bottom) of the solar cell.
To better illustrate the operation and effects of the HIT battery annealing apparatus provided in example 1, the present invention provides examples 2 to 6.
Example 2
The embodiment provides an HIT battery annealing method, which comprises the following steps:
irradiating the solar cell piece brushed with the silver paste for 10min by a light source with the wavelength of 300-750 nm;
the light intensity of the light source is 10 standard suns, and the light intensity of 1 standard sun is 1000W/h.m2。
Example 3
The embodiment provides an HIT battery annealing method, which comprises the following steps:
irradiating the solar cell piece brushed with the silver paste for 0.2min by a light source with the wavelength of 300-750 nm;
the light intensity of the light source is 60 standard suns, and the light intensity of 1 standard sun is 1000W/h.m2。
Example 4
The embodiment provides an HIT battery annealing method, which comprises the following steps:
irradiating the solar cell piece brushed with the silver paste for 0.2min by a light source with the wavelength of 300-750 nm; the light intensity of the light source is 60 standard suns, and the light intensity of 1 standard sun is 1000W/h.m2；
Meanwhile, the solar cell piece brushed with the silver paste is heated for 0.2min at the temperature of 70-220 ℃ (70-300 ℃) in a furnace body.
Example 5
The embodiment provides an HIT battery annealing method, which adopts the HIT battery annealing equipment described in embodiment 1, and includes the following steps:
irradiating the solar cell brushed with the silver paste by using the light source; and receiving atmosphere gas through the gas inlet, conveying the atmosphere gas into the furnace body through the gas inlet, and finishing the annealing under the atmosphere gas.
Preferably, the method further comprises the following steps:
the solar cell piece brushed with the silver paste is heated by the heating device, and the exhaust device is cooled to maintain the set process temperature.
Specifically, the set process temperature is in the range of 70-300 ℃.
Example 6
In this embodiment, compared with embodiment 5, the difference is that when the heating device is used to heat the solar cell sheet brushed with the silver paste, a gradient heating method is adopted, and the specific method is as follows:
the solar cell is solidified in the first stage through a first temperature zone formed by the heating device and/or the exhaust device;
after the solar cell is heated in the first temperature zone, a second temperature zone is formed through the heating device and/or the exhaust device, and the solar cell heated in the first temperature zone is cured in the second stage;
and after the solar cell in the second temperature zone is cured, performing the third-stage curing on the solar cell cured in the second temperature zone through a third temperature zone formed by the heating device and/or the exhaust device.
Specifically, the temperatures of the first stage, the second stage and the third stage are respectively:
(1) the first stage is as follows: curing the solar cell piece brushed with the silver paste at the temperature of 120-220 ℃;
(2) and a second stage: curing the solar cell piece brushed with the silver paste at the temperature of 140 ℃ and 220 ℃;
(3) and a third stage: and curing the solar cell piece brushed with the silver paste at 70-220 ℃.
The second temperature zone is a curing zone of the solar cell piece brushed with silver paste with a preset thickness, the set temperature of the second temperature zone is the silver paste curing temperature recommended by a low-temperature silver paste manufacturer, the curing temperatures of different batches of paste produced by different silver paste manufacturers are different due to different formulas, the recommended curing temperature of the low-temperature paste in the current market is usually within the temperature range of 140 ℃ to 220 ℃, and the set temperature is favorable for quick curing of the silver paste.
The second temperature zone is a cooling zone of the solar cell piece brushed with the silver paste with the preset thickness, the temperature of the second temperature zone is in a range of 70-220 ℃, and the set temperature is favorable for solidification of the solar cell piece brushed with the silver paste with the preset thickness.
The temperature of each temperature zone can be controlled by adopting PID temperature control, the actual temperature is detected by a temperature probe, and the temperature control can be realized by a temperature control instrument or a Programmable Logic Controller (PLC) and the like.
Preferably, the method specifically comprises the following steps:
at first, the first warm area that infrared spectrum through heating device formed, heat the solar wafer, the temperature of solar wafer is higher than the temperature of silver thick liquid after the heating here, the temperature of solar wafer and silver thick liquid contact position is higher than the temperature on silver thick liquid surface, and the resin in the silver thick liquid is half the molten state, more be favorable to the discharge of organic gas in the silver thick liquid as far as possible, the temperature that solar wafer and silver thick liquid contact position are higher than the surface of silver thick liquid simultaneously leads to the inside organic gas of silver thick liquid to escape from other positions except solar wafer and silver thick liquid contact position.
Secondly, after the solar wafer is heated in first warm-up area, the second warm-up area that infrared spectrum formed through heating device solidifies the solar wafer of first warm-up area heating, wherein, the temperature in first warm-up area is less than the temperature in second warm-up area, is favorable to the organic gas volatilization in the silver thick liquid like this, here because the silver thick liquid has discharged most organic gas in the silver thick liquid after the heating through first warm-up area, so the second warm-up area here more is favorable to the fast curing of silver thick liquid to form the bonding structure with the resin cover solar wafer that is half molten state in the silver thick liquid.
After the solar cell after the second temperature zone is solidified, the solar cell after the second temperature zone is solidified is cooled through a third temperature zone formed by infrared spectrum of the heating device, wherein the temperature of the third temperature zone is lower than that of the first temperature zone, and cooling of silver paste and the solar cell is facilitated.
Preferably, the utility model discloses in the method of intrinsic thin layer heterojunction HIT low temperature silver thick liquid solidification, the temperature of heating solar wafer is higher than the temperature of silver thick liquid, and the temperature of solar wafer and silver thick liquid contact position is higher than the temperature on silver thick liquid surface, and resin in the silver thick liquid is half-melt state to make other positions except that follow the contact position escape the inside organic gas of silver thick liquid, include:
when heating solar wafer through the first warm area that forms at heating device, the temperature of heating solar wafer is higher than the temperature of silver thick liquid, and the temperature of solar wafer and silver thick liquid contact position is higher than the temperature on silver thick liquid surface, and the resin in the silver thick liquid is half molten state to make the organic gas of other positions escape the inside silver thick liquid of follow except contact position, wherein, first warm area is in 120 ℃ to 220 ℃ of the temperature range, and the temperature of setting is favorable to organic gas in the silver thick liquid to volatilize.
Through the second warm area that heating device formed, the solar wafer after heating first warm area solidifies, covers the resin that is half-melt state in the silver thick liquid and forms the bonding structure with solar wafer, and wherein, the second warm area is in 140 ℃ to 220 ℃ of the temperature range, and the temperature of setting is for being favorable to the quick solidification of silver thick liquid.
Preferably, the utility model discloses in the method of intrinsic thin layer heterojunction HIT low temperature silver thick liquid solidification, the cooling bonding structure obtains the solar wafer that has solidification silver thick liquid, include:
and cooling the bonding structure after the second temperature zone is cured and the solar cell piece brushed with the silver paste with the preset thickness by using a third temperature zone formed by the heating device to obtain the solar cell piece with the solidified silver paste, wherein the third temperature zone is in a temperature range of 70-220 ℃, and the set temperature is favorable for cooling the solar cell piece brushed with the silver paste with the preset thickness.
Comparative example 1
This comparative example compares example 1 with the difference that: the absence of the light source and other corresponding devices; namely: and curing the solar cell coated with the silver paste by adopting an infrared heating mode.
Test example 1
To better illustrate the application effect of the HIT battery annealing apparatus provided by the present invention, the experimental example provides data of HIT batteries obtained after actual scale production according to the method described in example 5, as shown in table 1:
TABLE 1
This test example also provides data on HIT cells obtained after actual scale production according to the method described in example 6, as shown in table 2:
TABLE 2
As those skilled in the art will appreciate, even if the same manner (e.g., comparative example 1 presented in table 1, table 2) is repeated several times, there will be slight differences in the data, which are subject to experimental error.
It can be seen from table 1, table 2 that adopt the utility model provides an HIT battery annealing equipment can make battery efficiency rise more than 0.15% at least.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
Although the invention has been described in detail in the foregoing by way of general description, specific embodiments and experiments, it will be apparent to those skilled in the art that certain modifications and improvements may be made thereto based on the invention. Therefore, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (9)
1. An HIT battery annealing apparatus, comprising:
the furnace body is internally provided with a containing cavity, and the containing cavity can contain the solar cell piece brushed with silver paste;
the light source is connected with the furnace body and can irradiate the solar cell coated with the silver paste to anneal; wherein the wavelength range of the light source is between 300 and 750 nm;
the exhaust device comprises an air inlet, an air supply port and an air exhaust port; the air inlet is arranged on the furnace body; the air inlet is communicated with the air supply opening, the air supply opening is arranged in the furnace body, and the air exhaust opening is arranged on the furnace body and can exhaust gas in the furnace body.
2. The HIT battery annealing apparatus as claimed in claim 1, wherein the light source is selected from at least one of an LED lamp, a xenon lamp, a tungsten lamp, and a laser.
3. The HIT cell annealing apparatus of claim 2, wherein the light source has a light intensity of not less than 10 standard suns, and 1 standard sun has a light intensity of 1000W/h-m2。
4. The HIT battery annealing apparatus as claimed in any one of claims 1 to 3, further comprising: a heating device;
the heating device is arranged in the furnace body and can heat the solar cell piece brushed with the silver paste; the heating device is an infrared light source with the wavelength ranging from 750nm to 4000 nm.
5. The HIT battery annealing apparatus of claim 4, wherein the infrared light source is selected from at least one of a quartz infrared lamp, a ceramic infrared lamp, and an LED infrared lamp.
6. The HIT battery annealing apparatus as claimed in any one of claims 1 to 3, further comprising: and the lamp cooling device is arranged corresponding to the light source and can cool the light source.
7. The HIT battery annealing apparatus as claimed in any one of claims 1 to 3, further comprising: and the heat insulation light-passing board is arranged corresponding to the light source and can be positioned between the light source and the solar cell piece brushed with the silver paste.
8. The HIT battery annealing apparatus according to any one of claims 1 to 3, wherein the furnace body is provided with first and second openings opposing each other in a first direction;
the HIT battery annealing apparatus further includes: a conveying device; the conveying device at least comprises a conveying belt, and the conveying belt extends along the first direction and penetrates through the first opening and the second opening to penetrate through the accommodating cavity; the conveyer belt is used for bearing the weight of the brush has the solar wafer of silver thick liquid, and can drive the brush has the solar wafer of silver thick liquid to move along first direction, so that the brush has the solar wafer of silver thick liquid can by first opening gets into hold the chamber and by the second opening leaves hold the chamber.
9. The HIT battery annealing apparatus of claim 8, wherein the conveyor belt is one of PEEK, PTFE, CTFE, PVDF, PVDC, POM, PA, PS, PE, ABS, PMMA, PVF, nylon, polysulfone, PPO, epoxy, modified material, synthetic material, ceramic, carbon fiber, tungsten alloy wire.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111735299A (en) * | 2020-07-23 | 2020-10-02 | 苏州炳日科技有限公司 | A integrative stove of solidification passivation for solar cell production |
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
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2019
- 2019-12-26 CN CN201922389295.7U patent/CN210723078U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
| CN111735299A (en) * | 2020-07-23 | 2020-10-02 | 苏州炳日科技有限公司 | A integrative stove of solidification passivation for solar cell production |
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Address after: No. 190, Shidai Avenue, Longchi street, Liuhe District, Nanjing City, Jiangsu Province, 211500 Patentee after: NANJING HUABAI NEW MATERIAL Co.,Ltd. Address before: No. 11, Xinghuo North Road, high tech Development Zone, Nanjing, Jiangsu 210061 Patentee before: NANJING HUABAI NEW MATERIAL Co.,Ltd. |