CN117107196A - Cadmium telluride thin film solar cell, manufacturing method and coating device - Google Patents
Cadmium telluride thin film solar cell, manufacturing method and coating device Download PDFInfo
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- CN117107196A CN117107196A CN202311244641.7A CN202311244641A CN117107196A CN 117107196 A CN117107196 A CN 117107196A CN 202311244641 A CN202311244641 A CN 202311244641A CN 117107196 A CN117107196 A CN 117107196A
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- crucible
- cadmium telluride
- thin film
- solar cell
- film solar
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- 238000000576 coating method Methods 0.000 title claims abstract description 107
- 239000011248 coating agent Substances 0.000 title claims abstract description 103
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 239000010409 thin film Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000003860 storage Methods 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 68
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 22
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 20
- 239000007888 film coating Substances 0.000 claims description 15
- 238000009501 film coating Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 6
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 abstract description 10
- 238000010248 power generation Methods 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000013589 supplement Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 54
- 238000007747 plating Methods 0.000 description 22
- 229910004613 CdTe Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000002202 sandwich sublimation Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application provides a cadmium telluride thin film solar cell, a manufacturing method and a coating device, wherein the coating device comprises a coating cavity, a feeding component, a storage component, a heating component and a transmission component, wherein the storage component, the heating component and the transmission component are positioned in the coating cavity, the storage component is used for storing a material source, the storage component comprises at least one crucible with an opening at the bottom surface, at least one part of the feeding component is positioned in the coating cavity, the part of the feeding component positioned in the coating cavity stretches into the crucible to supplement the material source, the heating component is used for heating the crucible to enable the material source to be heated and sublimated into material source steam, and the transmission component is positioned below the storage component and used for bearing a substrate and driving the substrate to move so that the material source steam is deposited on the substrate from top to bottom through the opening to form a thin film. The coating device can realize the top-down diffusion deposition of material source steam, effectively increase the power generation area and the production efficiency of the cadmium telluride thin film solar cell, simultaneously realize on-line continuous feeding and further effectively improve the productivity.
Description
Technical Field
The application belongs to the field of photovoltaic thin film batteries, and relates to a cadmium telluride thin film solar cell, a manufacturing method and a coating device.
Background
The cadmium telluride thin-film solar cell is called as CdTe cell for short, the CdTe cell is one of the most successful thin-film solar cells commercialized so far, the band gap width of the material is about 1.5eV, the material is more matched with solar spectrum, the theoretical efficiency of the material is up to 32%, and the material is higher than that of crystalline silicon, so that the cost reduction potential is huge; at present, the laboratory efficiency of CdTe thin film solar cells reaches 22.1%, the commercial assembly efficiency reaches 19.0%, and the cost can be balanced with that of crystalline silicon products. Based on the above, cdTe batteries are the most definite new energy technology with development prospects in the next few years, and the productivity is in a continuous expansion stage. In the global photovoltaic market, thin film photovoltaic cells account for about 5%, while 80% of thin film photovoltaic cells are based on CdTe technology.
CdTe cells are thin film solar cells based on a heterojunction of p-type CdTe and n-type CdS, and currently the CdTe absorber layer of cadmium telluride cells is mostly deposited using the bottom-up close space sublimation process technology (CSS). The method has the advantages that no carrier gas is generated in the deposition process, and the deposition process is not influenced; the cadmium telluride particles do not fall into the film in the deposition process to influence the film forming quality. However, referring to fig. 1, a simplified schematic structure of a typical close-space sublimation film plating apparatus is shown, and there are some significant drawbacks in this method, for example, since the substrate 102 is transported above the material source 103 by using the roller 101 to support the substrate 102, in order to maintain the effective area of the film plating surface 102a, the limited contact area between the substrate 101 and the roller 101 makes the transportation speed of the substrate 101 limited, which affects the production efficiency, and the film plating surface 102a of the substrate 101 inevitably has roller marks, which not only affects the appearance, but also loses the effective area of the battery, thereby affecting the working performance of the battery; in addition, when the near space sublimation method is adopted, the material is fed once, the machine is stopped for about 10-14 days, the starting rate of the equipment is difficult to exceed 80%, and the productivity is further limited.
Therefore, how to provide a cadmium telluride thin film solar cell, a manufacturing method and a film plating device to improve productivity and ensure the working performance of the cell is an important technical problem to be solved by those skilled in the art.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present application is directed to a cadmium telluride thin film solar cell, a manufacturing method and a coating device, which are used for solving the problems that the effective area and the transmission speed of a coating surface are limited and the productivity cannot be improved due to a one-time feeding manner when a CdTe absorbing layer is manufactured by a near-space sublimation method in the prior art.
To achieve the above and other related objects, the present application provides a cadmium telluride thin film solar cell plating apparatus comprising:
a film coating cavity;
the storage component is positioned in the film coating cavity to store a material source and comprises at least one crucible, and an opening is formed in the bottom surface of the crucible;
a feed assembly, at least a portion of which is located within the coating cavity, and a portion of which is located within the coating cavity also extends into the crucible to replenish the material source;
the heating component is positioned in the coating cavity and is used for heating the crucible so as to lead the material source to be heated, sublimated and decomposed into material source steam;
the transmission component is positioned in the coating cavity and below the storage component, and is used for bearing a substrate and driving the substrate to move so that the material source steam is deposited on the substrate from top to bottom through the opening to form a film.
Optionally, the heating component comprises a plurality of infrared heaters, and the infrared heaters are uniformly distributed in the coating cavity.
Optionally, the position of the infrared heater includes at least one of an inner wall of the coating cavity and an outer wall of the crucible.
Optionally, the feeding assembly comprises a continuous feeding device and at least one feeding pipeline, wherein the continuous feeding device is positioned outside the film coating cavity, one end of the feeding pipeline is communicated with the continuous feeding device, and the other end of the feeding pipeline stretches into the crucible.
Optionally, a multistage valve is arranged at a part of the feeding pipeline between the coating cavity and the continuous feeding device.
Optionally, the coating device further comprises a vacuum pumping assembly, and at least one part of the vacuum pumping assembly is communicated with the coating cavity so that the coating cavity maintains a preset vacuum degree during coating.
Optionally, the crucible further comprises a baffle surrounding the opening and extending upwardly from the bottom wall of the crucible, the baffle being spaced a predetermined distance from the top surface of the crucible.
Optionally, the storage subassembly still includes first regulating plate and the second regulating plate that the symmetry set up, first regulating plate with the second regulating plate respectively with crucible swing joint, the one end of first regulating plate with the one end of second regulating plate is all from in the crucible via the opening extends to outside the crucible.
Optionally, the material source comprises at least one of cadmium telluride and cadmium sulfide.
Optionally, the storage component comprises a first crucible and a second crucible, the first crucible is provided with a first opening and is used for storing cadmium sulfide, the second crucible is provided with a second opening and is used for storing cadmium telluride, and the transmission component bears that the substrate sequentially passes through the lower part of the first crucible and the lower part of the second crucible so as to sequentially deposit a cadmium sulfide film and a cadmium telluride film on the substrate based on the first opening and the second opening.
The application also provides a manufacturing method of the cadmium telluride thin film solar cell, which comprises the following steps:
providing a substrate, wherein a transparent conductive layer is formed on the substrate;
depositing a window layer on the transparent conductive layer;
depositing an absorption layer on the window layer, wherein the absorption layer comprises a cadmium telluride thin film, and the deposition of the cadmium telluride thin film is performed in the cadmium telluride thin film solar cell coating device;
and forming a back contact layer and a back electrode layer on the absorption layer in sequence.
Optionally, the window layer comprises a cadmium sulfide film, and depositing the cadmium sulfide film is performed in a cadmium telluride film solar cell coating apparatus as described above.
Optionally, in the process of depositing the cadmium sulfide film and the cadmium telluride film, the vacuum degree of the film coating cavity is less than or equal to 1mbar.
The application also provides a cadmium telluride thin film solar cell, which is manufactured by adopting the manufacturing method of the cadmium telluride thin film solar cell.
As described above, the cadmium telluride thin film solar cell coating device can realize the top-down diffusion deposition of material source steam, break through the limitation of the traditional bottom-up coating process on the coating area and the transmission speed, effectively increase the power generation area and the production efficiency of the cadmium telluride thin film solar cell, simultaneously realize the online continuous feeding and effectively improve the productivity of a production line. Further, when the storage component in the coating device is further provided with the first adjusting plate and the second adjusting plate, the flow of sublimated material source steam in the crucible can be controlled through adjusting the inclination angles of the two adjusting plates, so that the thickness of a film layer formed by deposition is controlled, the manufacturing of film layers (with different thicknesses) of different product models can be realized, and the diversified application of the coating device is realized. The manufacturing method of the cadmium telluride thin film solar cell can ensure the film quality of the absorption layer in the cadmium telluride thin film solar cell and improve the manufacturing efficiency. Compared with the conventional cadmium telluride thin film solar cell with the same size, the cadmium telluride thin film solar cell has the advantages that the effective power generation area is increased, and therefore the working performance is improved.
Drawings
FIG. 1 is a simplified schematic diagram of a typical close-space sublimation deposition apparatus.
Fig. 2 is a schematic diagram showing a partial cross-sectional structure of a cadmium telluride thin film solar cell coating apparatus according to the present application.
FIG. 3 is a schematic view showing a partial structure of a baffle plate in the cadmium telluride thin film solar cell coating apparatus according to the present application when the baffle plate is disposed on the bottom surface of a crucible.
Fig. 4 is a schematic top view of fig. 3.
Fig. 5 is a schematic view showing a partial sectional structure of a crucible of the cadmium telluride thin film solar cell coating apparatus according to the present application, when the crucible is provided with a tapered cylindrical baffle.
Fig. 6 is a schematic diagram showing a partial sectional structure of the cadmium telluride thin film solar cell coating apparatus according to the present application when the first crucible and the second crucible are provided.
Fig. 7 is a schematic diagram showing a partial cross-sectional structure of a storage component in the cadmium telluride thin film solar cell coating apparatus according to the present application when the storage component is provided with a first adjusting plate and a second adjusting plate.
Fig. 8 is a schematic diagram showing a partial cross-sectional structure of a storage component in the cadmium telluride thin film solar cell coating apparatus according to the present application, when the storage component is provided with a baffle and an adjusting plate.
FIG. 9 is a flow chart showing the steps of the method for fabricating a cadmium telluride thin film solar cell according to the present application.
Fig. 10 is a schematic diagram showing a cross-sectional structure of a solar cell manufactured by the method for manufacturing a cadmium telluride thin film solar cell according to the present application.
Description of element reference numerals
101. Roller wheel
102. Substrate
102a coating surface
103. Material source
10. Film coating cavity
20. Storage assembly
21. Crucible pot
211. An opening
21a first crucible
211a first opening
21b second crucible
211b second opening
212. Baffle plate
22a first adjusting plate
22b second adjusting plate
31. Charging pipeline
41. Infrared heater
51. Roller wheel
60. Substrate board
601. Substrate
602. Transparent conductive layer
603. Window layer
604. Absorbent layer
605. Back contact layer
606. Back electrode layer
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application.
Please refer to fig. 2 to fig. 10. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
Referring to fig. 2, a schematic diagram of a partial cross-sectional structure of the film plating device is shown, and the device specifically includes a film plating cavity 10, a material storage component, a material feeding component, a heating component and a conveying component (all components are not identified in fig. 2 except the film plating cavity 10).
Specifically, the storage component is located in the film plating cavity 10 to store a material source, and the storage component includes at least one crucible 21 (including graphite material), and an opening 211 is formed on the bottom surface of the crucible 21; at least a portion of the feed assembly is located within the coating cavity 10, and the portion of the feed assembly located within the coating cavity 10 also extends into the crucible 21 to replenish the material source; the heating component is positioned in the coating cavity 10 and is used for heating the crucible 21 so as to lead the material source to be heated, sublimated and decomposed into steam; the transmission assembly is disposed in the coating cavity 10 and below the storage assembly, and is configured to carry the substrate 60 and drive the substrate 60 to move so that the vapor is deposited on the substrate 60 from top to bottom through the opening 211 to form a thin film.
According to the coating device, a mode that a roller transmits a substrate above a material source in a traditional near-space sublimation coating device is improved to convey a substrate below a crucible by a transmission component, and a bottom opening of the crucible is opened to enable sublimated material source steam to be downwards diffused onto the substrate through the opening to be deposited to form a film, under the condition, a non-coating surface of the substrate is directly contacted with the transmission component, and the coating surface of the substrate is completely exposed, the condition that the effective area of the coating surface is reduced due to the fact that the coating surface is contacted with the transmission component can be avoided, so that the overall working performance of a solar cell is improved, meanwhile, under the bearing mode, the contact area of the substrate and the transmission component can be increased according to actual needs without considering the problem that the transmission speed is increased to cause the stability of substrate transmission, and therefore the production efficiency is effectively improved. Meanwhile, the feeding assembly is arranged in the coating device, so that online feeding of a material source in the coating process can be realized, the influence on the equipment opening rate caused by shutdown feeding is avoided, and the productivity is further improved.
As an example, the material source includes at least one of cadmium telluride and cadmium sulfide, that is, the film plating device of this embodiment can deposit a cadmium telluride film, or can deposit a cadmium sulfide film, and the variety of the material source stored in the crucible 21 can be adjusted based on actual needs to realize diversified use of the device, so as to improve the utilization rate of the equipment.
By way of example, the feed assembly comprises a continuous feed device (not shown in fig. 2) located outside the coating chamber 10 and at least one feed conduit 31, one end of the feed conduit 31 being in communication with the continuous feed device, the other end of the feed conduit 31 extending into the crucible 21. The continuous feeding device is used for conveying a material source in the material source storage device into the feeding pipeline 31, and then the material source is supplemented into the crucible 21 through the heating pipeline, so that raw materials can be supplemented under the condition of no shutdown in the film coating process, the problem that the capacity is limited due to shutdown feeding in the traditional near-space sublimation film coating process is effectively solved, and the remarkable improvement of the capacity is realized.
As an example, the portion of the feed pipe 31 between the coating chamber 10 and the continuous feed means is provided with a multi-stage valve (not shown in fig. 2) for achieving flexible on-line continuous feed of the material source.
By way of example, the heating assembly comprises a plurality of infrared heaters 41, the infrared heaters 41 are uniformly distributed in the coating cavity 10, the infrared heaters 41 provide heat for the material source in the crucible 21 to sublimate and decompose the material source into steam when heated, and when the crucible 21 is heated to 650 ℃ or higher, the CdTe source sublimates and decomposes into Cd and Te 2 The infrared heater 41, on the other hand, provides heat (radiant heating) to the substrate 60 to bring the substrate 60 to a predetermined temperature (500 ℃ or more), which is advantageous in uniformity and quality of the deposited film. The term "uniformly distributed" as used herein means that the plurality of infrared heaters 41 are arranged to ensure uniformity of temperature at each position in the crucible 21 and uniformity of temperature at each position when the substrate 60 passes under the crucible 21.
Further, the position of the infrared heater 41 includes at least one of an inner wall of the coating cavity 10 and an outer wall of the crucible 21. Based on the foregoing, it is known that the infrared heater 41 needs to heat the substrate 60 in addition to providing heat to the material source in the crucible 21, so that the specific position of the infrared heater 41 is set based on actual needs, but it should be noted that it is necessary to ensure that the temperature in the crucible 21 reaches a certain temperature (e.g., 650 ℃) or higher to sublimate the material source, so that the plurality of infrared heaters 41 are preferably disposed close to the crucible 21 (not necessarily required to be directly disposed on the outer wall of the crucible 21) and uniformly distributed, so that the crucible 21 and each portion of the substrate 60 are uniformly heated, and precise temperature regulation can be achieved.
As an example, the transfer assembly includes a plurality of rollers 51 arranged at intervals, and the substrate 60 is placed on the rollers 51 to move with the rotation of the rollers 51.
As an example, the coating device further includes a vacuum pumping assembly (not shown in fig. 2), at least a portion of which is in communication with the coating cavity 10, so that the coating cavity 10 maintains a preset vacuum degree during coating, and the coating uniformity and coating efficiency can be improved by maintaining the preset vacuum degree.
As an example, the crucible 21 further comprises a baffle 212, the baffle 212 surrounding the opening 211 and extending upwardly from the bottom wall of the crucible 21, the baffle 212 being spaced a predetermined distance from the top surface of the crucible 21 (shown in fig. 2 d). The baffle 212 is used to prevent the material at the bottom of the crucible 21 from falling onto the substrate 60 or the conveying assembly from the opening 211, so as to affect the coating quality of the substrate 60 and the conveying performance of the conveying assembly, while the preset distance between the baffle 212 and the top surface of the crucible 21 is used to enable the vapor of the sublimated material in the crucible 21 to diffuse toward the opening 211 through the gap, so as to avoid affecting the vapor diffusion rate due to too small gap, and further affect the production efficiency, and specific numerical values are comprehensively considered based on parameters such as the size of the opening 211, the distance between the coating surface of the substrate 60 and the crucible 21, and the conveying speed of the conveying assembly, so as to understand the structure of the baffle 212 and the positional relationship between the baffle 212 and the opening 211 in detail, please refer to fig. 3 and 4 in combination, wherein fig. 3 shows a schematic partial structure when the baffle 212 is disposed on the bottom surface of the crucible 21, and fig. 4 shows a schematic top view of the structure in fig. 3.
Further, the baffle 212 may be in a vertical cylindrical shape (as shown in fig. 2, with the same width at top and bottom) or in a conical cylindrical shape (as shown in fig. 5, with the specific shape of the baffle 212 being set based on actual needs, preferably in a conical cylindrical shape, so as to maintain a better gas conductance and enable the steam to diffuse downward from the opening 211 rapidly and uniformly.
In other embodiments, referring to fig. 6, a schematic view of a partial cross-sectional structure of the coating device with a first crucible and a second crucible is shown, the storage assembly includes a first crucible 21a and a second crucible 21b, the first crucible 21a has a first opening 211a and is used for storing cadmium sulfide, the second crucible 21b has a second opening 211b and is used for storing cadmium telluride, and the transport assembly carries the substrate 60 sequentially passing under the first crucible 21a and under the second crucible 21b to sequentially deposit a cadmium sulfide film and a cadmium telluride film on the substrate 60 based on the first opening 211a and the second opening 211 b. Namely, the first crucible 21a and the second crucible 21b are simultaneously arranged in the film coating cavity 10 of the film coating device, and the substrate 60 is driven to sequentially pass through the lower parts of the first crucible 21a and the second crucible 21b by utilizing the transmission component, so that the substrate 60 is firstly deposited with a cadmium sulfide film and then with a cadmium telluride film in one film coating device, two main film layers of the solar cell are manufactured, the steps of taking out and putting in are reduced in the manufacturing process, the operation period of the manufacturing process is shortened, and the productivity is effectively improved.
As an example, the coating device further includes a material source capacity detecting component (such as an image sensor, a pressure sensor, etc., not shown in the drawing) in the crucible 21, and the residual amount of the material source in the crucible 21 is detected in real time based on the material source capacity detecting component so as to supplement the material source in time, so that the steam output of the material source is prevented from being affected due to insufficient material source, and the stability of the thickness of the coating layer is further improved.
The cadmium telluride thin film solar cell coating device can realize top-down diffusion deposition of material source steam, breaks through the limitation of the traditional bottom-up coating process on coating area and transmission speed, effectively increases the power generation area and production efficiency of the cadmium telluride thin film solar cell, can realize online continuous feeding, and effectively improves the productivity of a production line. In addition, no external gas interference exists in the film plating device, the evaporation source gas is fully mixed, and film plating uniformity is better.
Example two
The difference between the present embodiment and the embodiment is that the gas flow of the material source vapor is adjustable when the film plating device performs film plating, and referring to fig. 2, a schematic structural diagram of the film plating device is shown, and the film plating device specifically includes a film plating cavity 10, a material storage component, a material feeding component, a heating component and a transmission component (all the components are not identified in fig. 2 except the film plating cavity 10).
Specifically, the storage component is located in the film plating cavity 10 to store a material source, and the storage component includes at least one crucible 21, and an opening 211 is formed on the bottom surface of the crucible 21; at least a portion of the feed assembly is located within the coating cavity 10, and the portion of the feed assembly located within the coating cavity 10 also extends into the crucible 21 to replenish the material source; the heating component is positioned in the coating cavity 10 and is used for heating the crucible 21 so as to lead the material source to be heated, sublimated and decomposed into steam; the transmission assembly is disposed in the coating cavity 10 and below the storage assembly, and is configured to carry the substrate 60 and drive the substrate 60 to move so that the vapor is deposited on the substrate 60 from top to bottom through the opening 211 to form a thin film.
As an example, please refer to fig. 7, which is a schematic cross-sectional structure diagram of the storage assembly with a first adjusting plate and a second adjusting plate, the storage assembly further includes a first adjusting plate 22a and a second adjusting plate 22b symmetrically disposed, the first adjusting plate 22a and the second adjusting plate 22b are movably connected with the crucible 21 respectively, and one end of the first adjusting plate 22a and one end of the second adjusting plate 22b extend from the crucible 21 to the outside of the crucible 21 through the opening 211. The purpose of setting the first adjusting plate 22a and the second adjusting plate 22b is to flexibly adjust the output quantity of the material source steam (related to w shown in fig. 7) while realizing uniform diffusion of steam based on adjustment of the inclination angles of the two adjusting plates (adjustable by a mechanical adjusting mode), so as to obtain a film with uniform thickness and proper grain size, and simultaneously, the requirement of manufacturing film layers with different thicknesses can be met, and diversified application of the film coating device is realized. It should be noted that when the first adjusting plate 22a and the second adjusting plate 22b are flexibly connected to the crucible 21, it is necessary to ensure that the material source at the bottom of the crucible 21 does not fall from the connection between the two plates, so as to affect the quality of the film.
As an example, the crucible 21 further comprises a baffle 212, the baffle 212 surrounding the opening 211 and extending upwardly from the bottom wall of the crucible 21, the baffle 212 being spaced a predetermined distance from the top surface of the crucible 21. Referring to fig. 8, a schematic cross-sectional structure of the storage assembly including a baffle and an adjusting plate (including a first adjusting plate and a second adjusting plate) is shown, and in the case of the baffle 212, the first adjusting plate 22a and the second adjusting plate 22b may be movably connected with the crucible 21 through the baffle 212.
According to the coating device, the first adjusting plate and the second adjusting plate are additionally arranged on the basis of the coating device in the first embodiment, the flow of sublimated material source steam in the crucible can be controlled through adjusting the inclination angles of the two adjusting plates, so that the thickness of a film formed by deposition is controlled, the manufacturing of films with different product types (thickness difference) can be realized, and the diversified application of the coating device is realized.
Example III
The present embodiment provides a method for manufacturing a cadmium telluride thin film solar cell, which is performed based on the film plating device or other suitable devices of any one of the first and second embodiments, and referring to fig. 9, the method specifically includes the following steps:
s1: providing a substrate, wherein a transparent conductive layer is formed on the substrate;
s2: depositing a window layer on the transparent conductive layer;
s3: depositing an absorber layer on the window layer, the absorber layer comprising a cadmium telluride thin film, the depositing the cadmium telluride thin film being performed in a cadmium telluride thin film solar cell coating apparatus as described above (embodiment one or embodiment two);
s4: and forming a back contact layer and a back electrode layer on the absorption layer in sequence.
Specifically, referring to fig. 10, a schematic cross-sectional structure of a solar cell manufactured by the manufacturing method is shown, and steps S1 to S5 are sequentially performed to provide a substrate 601, and a transparent conductive layer 602, a window layer 603, an absorption layer 604, a back contact layer 605 and a back electrode layer 606 are sequentially deposited on the substrate 601, wherein the absorption layer 604 is formed by deposition using the coating device in the first embodiment or the second embodiment. At this time, the substrate 601 on which the window layer 603 is deposited is used as the substrate 60 in the first embodiment and the second embodiment, i.e. the substrate 601 on which the window layer 603 is deposited is placed on the transport assembly with the window layer 603 facing upwards and is placed in a coating device for coating.
Specifically, the base 601 includes a glass substrate, which mainly plays a role of a support for the battery, preventing pollution and incident sunlight; the transparent conductive layer 602 mainly plays roles of light transmission and conductivity; the window layer 602 (such as CdS thin film, with a forbidden band width of 2.4eV, allowing most photons to pass through) is an N-type semiconductor, and forms a P-N junction with the P-type absorption layer 604; the absorption layer 604 (such as CdTe film, with a forbidden band width of 1.45 eV) belongs to a P-type semiconductor, and is used as a main body absorption layer of the solar cell, so as to form a P-N junction (the most core functional part of the whole cell) with the N-type window layer 602; the back contact layer 605 can lower the contact barrier between the CdTe thin film and the back electrode layer 606 (metal electrode), draw current, and make ohmic contact between the metal electrode and CdTe.
By way of example, the window layer 603 includes a cadmium sulfide film deposited within the cadmium telluride thin film solar cell coating apparatus as described in embodiment one or embodiment two. Further, when the coating apparatus includes both the first crucible 21a and the second crucible 21b, the cadmium telluride thin film can be deposited after the cadmium sulfide thin film is deposited. When the window layer 603 is also deposited by a film plating device, the substrate 601 on which the transparent conductive film is formed is the substrate 60 described in the first embodiment and the second embodiment.
As an example, in the process of depositing the cadmium sulfide film and the cadmium telluride film, the vacuum degree of the film plating cavity 10 is less than or equal to 1mbar, and a film structure with excellent film quality can be manufactured in the vacuum degree range.
The manufacturing method of the cadmium telluride thin film solar cell can ensure the film quality of the cadmium telluride absorption layer in the cadmium telluride thin film solar cell and improve the manufacturing efficiency.
Example IV
The embodiment provides a cadmium telluride thin film solar cell, which is manufactured by the manufacturing method of the cadmium telluride thin film solar cell described in the third embodiment or other suitable methods.
Compared with the conventional cadmium telluride thin film solar cell with the same size, the cadmium telluride thin film solar cell has the advantages that the effective power generation area is increased, and therefore the working performance is improved.
In summary, the cadmium telluride thin film solar cell coating device disclosed by the application can realize top-down diffusion deposition of material source steam, breaks through the limitation of the traditional bottom-up coating process on the coating area and the transmission speed, effectively increases the power generation area and the production efficiency of the cadmium telluride thin film solar cell, can realize online continuous feeding, and effectively improves the productivity of a production line. Further, when the storage component in the coating device is further provided with the first adjusting plate and the second adjusting plate, the flow of sublimated material source steam in the crucible can be controlled through adjusting the inclination angles of the two adjusting plates, so that the thickness of a film layer formed by deposition is controlled, the manufacture of film layers with different product models can be realized, and the diversified application of the coating device is realized. The manufacturing method of the cadmium telluride thin film solar cell can ensure the film quality of the absorption layer in the cadmium telluride thin film solar cell and improve the manufacturing efficiency. Compared with the conventional cadmium telluride thin film solar cell with the same size, the cadmium telluride thin film solar cell has the advantages that the effective power generation area is increased, and therefore the working performance is improved. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (14)
1. A cadmium telluride thin film solar cell coating apparatus, comprising:
a film coating cavity;
the storage component is positioned in the film coating cavity to store a material source and comprises at least one crucible, and an opening is formed in the bottom surface of the crucible;
a feed assembly, at least a portion of which is located within the coating cavity, and a portion of which is located within the coating cavity also extends into the crucible to replenish the material source;
the heating component is positioned in the coating cavity and is used for heating the crucible so as to lead the material source to be heated, sublimated and decomposed into material source steam;
the transmission component is positioned in the coating cavity and below the storage component, and is used for bearing a substrate and driving the substrate to move so that the material source steam is deposited on the substrate from top to bottom through the opening to form a film.
2. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the heating assembly comprises a plurality of infrared heaters, and the infrared heaters are uniformly distributed in the coating cavity.
3. The cadmium telluride thin film solar cell coating apparatus of claim 2, wherein: the infrared heater comprises at least one of an inner wall of the coating cavity and an outer wall of the crucible.
4. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the feeding assembly comprises a continuous feeding device and at least one feeding pipeline, wherein the continuous feeding device is positioned outside the film coating cavity, one end of the feeding pipeline is communicated with the continuous feeding device, and the other end of the feeding pipeline stretches into the crucible.
5. The cadmium telluride thin film solar cell coating apparatus of claim 4, wherein: and a multistage valve is arranged at the part of the feeding pipeline, which is positioned between the coating cavity and the continuous feeding device.
6. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the coating device further comprises a vacuumizing assembly, and at least one part of the vacuumizing assembly is communicated with the coating cavity so that the coating cavity can keep a preset vacuum degree during coating.
7. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the crucible further includes a baffle surrounding the opening and extending upwardly from the bottom wall of the crucible, the baffle being spaced a predetermined distance from the top surface of the crucible.
8. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the storage assembly further comprises a first adjusting plate and a second adjusting plate which are symmetrically arranged, the first adjusting plate and the second adjusting plate are respectively and movably connected with the crucible, and one end of the first adjusting plate and one end of the second adjusting plate extend from the inside of the crucible to the outside of the crucible through the opening.
9. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the material source includes at least one of cadmium telluride and cadmium sulfide.
10. The cadmium telluride thin film solar cell coating apparatus of claim 1, wherein: the storage assembly comprises a first crucible and a second crucible, the first crucible is provided with a first opening and is used for storing cadmium sulfide, the second crucible is provided with a second opening and is used for storing cadmium telluride, and the transmission assembly bears that the substrate sequentially passes through the lower part of the first crucible and the lower part of the second crucible so as to sequentially deposit a cadmium sulfide film and a cadmium telluride film on the substrate based on the first opening and the second opening.
11. The manufacturing method of the cadmium telluride thin film solar cell is characterized by comprising the following steps of:
providing a substrate, wherein a transparent conductive layer is formed on the substrate;
depositing a window layer on the transparent conductive layer;
depositing an absorber layer on the window layer, the absorber layer comprising a cadmium telluride film, the depositing the cadmium telluride film being performed within the cadmium telluride thin film solar cell coating apparatus of any one of claims 1-10;
and forming a back contact layer and a back electrode layer on the absorption layer in sequence.
12. The method for manufacturing the cadmium telluride thin film solar cell according to claim 11, wherein: the window layer comprising a cadmium sulfide film, the depositing the cadmium sulfide film being performed within the cadmium telluride thin film solar cell coating apparatus of any one of claims 1-10.
13. The method for manufacturing the cadmium telluride thin film solar cell according to claim 12, wherein: and in the processes of depositing the cadmium sulfide film and the cadmium telluride film, the vacuum degree of the film coating cavity is less than or equal to 1mbar.
14. A cadmium telluride thin film solar cell characterized by: the cadmium telluride thin film solar cell according to any one of claims 11 to 13.
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| CN118166331A (en) * | 2024-05-14 | 2024-06-11 | 龙焱能源科技（杭州）有限公司 | Continuous deposition device and continuous deposition system |
| CN118166331B (en) * | 2024-05-14 | 2024-09-13 | 龙焱能源科技（杭州）有限公司 | Continuous deposition device and continuous deposition system |
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