CN219842996U - Device for improving contact resistance of crystalline silicon battery - Google Patents
Device for improving contact resistance of crystalline silicon battery Download PDFInfo
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- CN219842996U CN219842996U CN202321353407.3U CN202321353407U CN219842996U CN 219842996 U CN219842996 U CN 219842996U CN 202321353407 U CN202321353407 U CN 202321353407U CN 219842996 U CN219842996 U CN 219842996U
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000012545 processing Methods 0.000 claims abstract description 28
- 238000011282 treatment Methods 0.000 claims abstract description 15
- 230000002441 reversible effect Effects 0.000 claims abstract description 13
- 238000007599 discharging Methods 0.000 claims abstract description 12
- 230000007246 mechanism Effects 0.000 claims description 31
- 230000000712 assembly Effects 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 6
- 230000006872 improvement Effects 0.000 abstract description 8
- 238000009825 accumulation Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to the technical field of solar cells and discloses a device for improving contact resistance of a crystalline silicon battery, which comprises a controller, a workbench and a rotary table positioned on the workbench, wherein stations for feeding, positioning, processing and discharging are sequentially arranged at the circumferential positions of the workbench corresponding to the rotary table, and battery pieces are placed on the rotary table corresponding to the feeding stations; a positioning device is arranged above the positioning station; a laser light source and a laser scanning galvanometer are arranged above the treatment station; the controller controls the laser scanning galvanometer to adjust the position of the laser source and then irradiates the metal grid line of the battery piece; a front electrode assembly capable of moving downwards to the upper surface of the battery piece is arranged above the treatment station, a back electrode device contacting the lower surface of the battery piece is arranged below the treatment station, and the front electrode assembly and the back electrode device are respectively electrically connected with the negative electrode and the positive electrode of a power supply so as to load reverse bias voltage on the metal grid line irradiated by laser. The device can reduce the irradiation position deviation caused by heat accumulation damage and feeding during improvement treatment.
Description
Technical Field
The utility model relates to the technical field of solar cells, in particular to a device for improving contact resistance of a crystalline silicon cell.
Background
In general, the electrical losses in crystalline silicon solar cells (crystalline silicon cells for short) are mainly: recombination loss of silicon wafer body region, recombination loss of passivation region, contact recombination loss of metal-semiconductor, transmission loss of silicon wafer body region, transmission loss of doped layer, contact resistance loss of metal-semiconductor, and resistance loss of metal gate line. In large-scale industrialization, the metallization manner adopted by crystalline silicon batteries is generally as follows: the metal grid line is firstly screen printed, and then the printed metal grid line is sintered at high temperature, so that the metal grid line is in conductive contact with a silicon wafer semiconductor structure (such as an emitter of a silicon wafer). In the high temperature sintering process, the metal grid line may damage the silicon wafer, for example: the contact resistance loss of the metal-semiconductor is far higher than the transmission loss of the doped layer and the resistance loss of the metal gate line, which limits the improvement of the conversion efficiency of the crystalline silicon cell.
In order to improve the contact resistance performance of the metal-semiconductor of the crystalline silicon cell, the utility model of publication No. CN111742417a provides a method for improving the ohmic contact characteristic between the contact grid and the emitter layer of the silicon solar cell, which proposes the following technical scheme: one electrode of the voltage source is electrically connected with a contact grid of the battery, and the other electrode of the voltage source is electrically connected with a contact device attached to a back contact of the battery so as to apply a reverse voltage of 1-20V to the battery; at the same time of applying reverse voltage, light is also usedSpot area of 1×10 3 ～10 4 μm 2 The point light source of (2) is irradiated to the light receiving surface of the battery, and the point light source is moved adjacent to the left and right sides of the contact finger of the contact grid. However, since a certain rotation and translation error occurs in the battery during the process of feeding and the like, the spot of the point light source is easily deviated from the contact finger (i.e., the metal grid line), thereby affecting the effect of improving the ohmic contact performance between the contact grid and the emitter layer.
In addition, the utility model with publication number of CN217485456U provides a device for reducing the contact resistance of a crystalline silicon solar cell, and the following technical improvement scheme is provided for the defect of the utility model of CN 111742417A: the strip laser light spots are adopted to replace the point light source light spots for mobile scanning, so that the production efficiency is improved. However, the device needs to scan the whole battery piece, which can cause heat accumulation to easily damage the surface of the battery piece and affect the photoelectric conversion efficiency of the battery piece. In addition, the device does not consider the adverse effect of rotation and translation errors existing in the battery feeding process, and the improvement treatment effect of the device on the contact resistance is affected.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art and provides a device for improving the contact resistance of a crystalline silicon battery.
Based on the above, the utility model discloses a device for improving the contact resistance of a crystalline silicon battery, which comprises a controller, a workbench and a rotary table rotatably arranged on the workbench surface, wherein a feeding station, a positioning station, a processing station and a discharging station are sequentially distributed at the circumferential position of the workbench surface corresponding to the rotary table, and a battery piece is placed on the rotary table corresponding to the feeding station, so that the battery piece sequentially passes through the positioning station, the processing station and the discharging station along with the rotation of the rotary table;
a positioning device for visually positioning the battery piece is arranged above the positioning station;
a laser light source and a laser scanning galvanometer which are communicated are arranged above the treatment station; the controller is electrically connected with the positioning device, the laser light source and the laser scanning galvanometer, so that the controller controls the laser scanning galvanometer to adjust the position of the laser light source and then irradiate the metal grid line of the battery piece;
the front electrode assembly which can move downwards to be in contact with the upper surface of the battery piece is further arranged above the treatment station, the back electrode device which is in contact with the lower surface of the battery piece is arranged below the treatment station, and the front electrode assembly and the back electrode device are respectively and electrically connected with the negative electrode and the positive electrode of a power supply so as to load reverse bias voltage on the metal grid line irradiated by laser.
Preferably, the workbench surface is provided with a gantry beam, and the upper beam of the gantry beam is positioned above the rotary table; the laser light source is arranged on the upper cross beam, the laser light source is communicated with the laser scanning galvanometer, and a light outlet is formed below the laser scanning galvanometer, so that the adjusted laser irradiates on the metal grid line through the light outlet.
Further preferably, the upper beam is further connected with a first mounting frame, and the lower end part of the first mounting frame is connected with the positioning device.
Further preferably, the controller is also electrically connected with a display mounted on the side of the gantry beam remote from the processing station.
Further preferably, the front electrode assembly includes a second mounting bracket connected to the upper beam, a Y-axis moving mechanism mounted to the second mounting bracket to be movable up and down, and a front electrode connected to a lower portion of the Y-axis moving mechanism, the front electrode being electrically connected to a negative electrode of the power supply.
Still further preferably, the front electrode assembly further includes a third mounting bracket connected to the Y-axis moving mechanism and an X-axis moving mechanism mounted under the third mounting bracket to be movable left and right, and the front electrode is connected under the X-axis moving mechanism.
Preferably, the number of the front electrode assemblies is two, and the two groups of the front electrode assemblies are respectively positioned at the upper left and the upper right of the processing station.
Preferably, the workbench surface is provided with a driving piece, the output end of the driving piece is rotationally connected with the rotary table at the rotation axis, and an electric slip ring is connected above the output end of the driving piece;
the rotary table top is provided with a jig for placing the battery piece, the back electrode device is arranged on the jig, and the electric slip ring is electrically connected with the back electrode device and the positive electrode of the power supply.
Further preferably, the rotary table tops corresponding to the feeding station, the positioning station, the processing station and the discharging station are respectively provided with the jig, and each jig is provided with the back electrode device.
Preferably, the controller comprises an upper computer, a motion control card and a laser control card, wherein the motion control card and the laser control card are electrically connected with the upper computer, the motion control card is electrically connected with a driving piece of the rotary table, a moving mechanism of the front electrode assembly and a power supply, the laser control card is electrically connected with the laser light source and the laser scanning galvanometer, and the upper computer is electrically connected with the power supply and the positioning device.
Further preferably, a cabinet is arranged below the workbench, and the upper computer, the motion control card, the laser control card and the power supply are installed in the cabinet.
Compared with the prior art, the utility model at least comprises the following beneficial effects:
1. through the cooperation of the front electrode assembly, the back electrode device and the power supply, the metal grid line of the battery piece is also loaded with reverse bias voltage in the laser treatment process, so that the semiconductor on the battery piece and the metal grid line are subjected to secondary melting sintering, the metallization performance of the semiconductor and the metal grid line is further improved, and the contact resistance loss of the metal-semiconductor is reduced.
2. The laser only processes the area near the metal grid line of the battery piece by matching the positioning device, the laser light source and the laser scanning vibrating mirror, so that the battery piece processing time is reduced, and meanwhile, the heat accumulation damage caused by scanning the whole battery piece can be reduced, and the damage to the battery piece in the processing process is greatly reduced; in addition, by positioning and laser position adjustment, the defect that laser irradiation deviates from a metal grid line caused by feeding errors of the battery piece can be greatly improved, so that laser energy can be more accurately irradiated on the metal grid line of the battery piece, and the improvement effect of the metallization performance of the crystalline silicon battery is improved.
Drawings
Fig. 1 is a schematic perspective view of a device for improving contact resistance of a crystalline silicon cell according to this embodiment.
Fig. 2 is a schematic perspective view of another view of the device for improving contact resistance of a crystalline silicon battery according to the present embodiment after removing a cabinet panel.
Fig. 3 is a schematic partial structure of a device for improving contact resistance of a crystalline silicon cell according to this embodiment.
Fig. 4 is a schematic view of the surface structure of the battery sheet in this embodiment.
Reference numerals illustrate: a work table 1; a feeding station 11; a positioning station 12; a processing station 13; a blanking station 14; a gantry beam 15; an upper cross member 151; a cabinet 16; a rotary table 2; a jig 21; a driving member 22; an electrical slip ring 23; a positioning device 3; a first mounting frame 31; a laser light source 4; a laser scanning galvanometer 41; a back electrode device 5; a front electrode assembly 6; a second mounting frame 61; a Y-axis moving member 62; a third mounting frame 63; an X-axis moving member 64; a front electrode 65; a controller 7; an upper computer 71; a motion control card 72; a laser control card 73; a display 74; a power supply 8; a battery piece 9; a metal gate line 91; a main gate line 911; a sub gate line 912; mark points 92; an outer contour 93.
Detailed Description
In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.
Examples
An apparatus for improving contact resistance of a crystalline silicon battery in this embodiment, see fig. 1-2, comprises a workbench 1, wherein a rotary table 2 is mounted on a surface of the workbench 1, and the rotary table 2 can perform rotary motion along an axis of the rotary table 2.
The circumferential positions of the working table 1, which correspond to the rotary table 2, are sequentially provided with a feeding station 11, a positioning station 12, a processing station 13 and a discharging station 14. Preferably, the jigs 21 are arranged on the surfaces of the rotary table 2 corresponding to the feeding station 11, the positioning station 12, the processing station 13 and the discharging station 14; that is, four jigs 21 are provided on the surface of the turntable 2.
The jig 21 is used for loading the battery piece 9 (as shown in fig. 4), and the jig 21 is rotated along with the rotary table 2. Therefore, after the battery piece 9 is placed on the jig 21 on the surface of the rotary table 2 corresponding to the feeding station 11, the battery piece 9 can rotate along with the rotary table 2 and the jig 21, and then sequentially enter the positioning station 12, the processing station 13 and the discharging station 14, so that the battery piece 9 can be sequentially positioned, processed and discharged, and the working efficiency is improved.
In this embodiment, the cell is a crystalline silicon solar cell unless otherwise specified.
In addition, since the four jigs 21 are correspondingly arranged on the surface of the rotary table 2, when each jig 21 rotates to the feeding station 11, a battery piece 9 can be placed by a manipulator or other existing feeding devices, and then the positioning, processing and discharging work can be performed by rotating in sequence; that is, the rotary table 2 can simultaneously perform the work of feeding, positioning, improving treatment and discharging on the four battery pieces 9, thereby further improving the working efficiency.
The gantry beam 15 is installed on the surface of the workbench 1, an upper beam 151 of the gantry beam 15 is located above the rotary table 2, and left and right lower end portions of the gantry beam 15 are located at left and right outer sides of the rotary table 2 respectively. Specifically, the upper beam 151 is further connected to a first mounting frame 31, the first mounting frame 31 extends below the upper beam 151, and a positioning device 3 is mounted at the lower end of the first mounting frame 31; the positioning device 3 is arranged above the positioning station 12 and is used for visually positioning the battery piece 9.
Further, a laser light source 4 is also mounted on the top surface of the upper beam 151 to emit laser light. The laser light source 4 is connected to the laser scanning galvanometer 41, so that the emitted laser energy reaches the laser scanning galvanometer 41, and the laser scanning galvanometer 41 can adjust the position of the laser (e.g. perform deviation compensation on the laser) according to the visual positioning information of the positioning device 3. The laser scanning galvanometer 41 is located above the processing station 13, and a light outlet is formed below the laser scanning galvanometer 41, so that the adjusted laser can irradiate the metal grid line 91 (as shown in fig. 4) of the battery piece 9 of the processing station 13 through the light outlet.
Therefore, by matching the positioning device 3, the laser light source 4 and the laser scanning galvanometer 41, the laser can only treat the area near the metal grid line 91 of the battery piece 9, so that the treatment time of the battery piece 9 is reduced, and meanwhile, the heat accumulation damage caused by the mode of scanning the whole battery piece 9 can be reduced, thereby greatly reducing the damage to the battery piece 9 in the treatment process; in addition, by positioning and laser position adjustment, the defect that the irradiated laser is deviated from the metal grid line 91 caused by the feeding error of the battery piece 9 can be greatly improved, so that the laser energy after the position adjustment can be more accurately irradiated on the metal grid line 91 of the battery piece 9, the distance deviation between the irradiated laser and the metal grid line 91 can be better ensured to be always kept within the allowable error range of the process, and the improvement effect of the metallization performance of the crystalline silicon battery is improved.
Wherein, to control the positioning device 3, the laser light source 4 and the laser scanning galvanometer 41 to automatically perform positioning, lasing and adjusting the laser, the device for improving the contact resistance of the crystalline silicon battery further comprises a controller 7 and a power supply 8 (as shown in fig. 2), wherein the power supply 8 is preferably a direct current constant voltage power supply, and the power supply 8 is electrically connected with the controller 7 to provide electric energy. The controller 7 is electrically connected with the positioning device 3 to automatically obtain visual positioning information of the positioning device 3; and the controller 7 is electrically connected with the laser light source 4 to control the laser light source 4 to automatically emit laser; the controller 7 is also electrically connected with the laser scanning galvanometer 41, so that the controller 7 controls the laser scanning galvanometer 41 to automatically perform position adjustment work; thereby greatly improving the working efficiency.
In practice, the positioning device 3 is a positioning structure in the prior art, so that a detailed description thereof will be omitted.
The controller 7 is further electrically connected with a display 74, and the display 74 is mounted on one side of the gantry beam 15 far away from the processing station 13, so as to avoid interference with the improvement of processing work, save mounting space, and enable the overall structure layout to be more compact and reasonable.
Wherein, in order to load the reverse bias to the battery piece 9 during the laser processing; referring to fig. 1 to 3, a front electrode assembly 6, which is downwardly movable to contact the upper surface of the battery sheet 9, is further installed above the processing station 13, and a rear electrode assembly 5 (shown in fig. 3), which contacts the lower surface of the battery sheet 9, is provided below the processing station 13, and the front electrode assembly 6 and the rear electrode assembly 5 are electrically connected to the negative and positive electrodes of the power supply 8, respectively. In this way, by matching the front electrode assembly 6, the back electrode device 5 and the power supply 8, the metal grid line 91 of the battery piece 9 is also loaded with reverse bias voltage in the laser processing process, and the secondary melting sintering is performed between the semiconductor such as the emitter and the doped layer on the battery piece 9 and the metal grid line 91 under the combined action of the laser and the reverse bias voltage, so that the metallization performance (such as the contact performance) of the semiconductor and the metal grid line 91 is improved, and the contact resistance loss of the metal-semiconductor is reduced.
The metal gate lines 91 on the upper and lower surfaces of the battery plate 9 each include a main gate line 911 and a sub gate line 912, and a reverse bias voltage may be applied to the main gate line 911 and/or the sub gate line 912.
Specifically, the front electrode assembly 6 includes, in order, a second mount 61, a Y-axis moving mechanism 62, a third mount 63, an X-axis moving mechanism 64, and a front electrode 65. The second mounting frame 61 is fixedly connected below the upper beam 151, the fixing part of the Y-axis moving mechanism 62 is fixedly connected with the second mounting frame 61, the moving end of the Y-axis moving mechanism 62 can move up and down, and the third mounting frame 63 is connected to the moving end of the Y-axis moving mechanism 62; further, the fixed end of the X-axis moving mechanism 64 is fixedly connected with the third mounting frame 63, the X-axis moving mechanism 64 is located below the third mounting frame 63, and the front electrode 65 is connected below the moving end of the X-axis moving mechanism 64, so that the moving end of the X-axis moving mechanism 64 can drive the front electrode 65 to move left and right, and the front electrode 65 is electrically connected with the negative electrode of the power supply 8. Thus, the front electrode 65 can move up and down along with the moving end of the Y-axis moving mechanism 62 to move to contact the upper surface of the battery plate 9; the front electrode 65 can be adjusted along with the moving end of the X-axis moving mechanism 64, so that the front electrode 65 can be aligned with and contact with the metal grid line 91 on the upper surface of the battery piece 9 more accurately, and the negative electrode of the power supply 8 can be caused to act on the metal grid line 91 on the upper surface of the battery piece 9 more accurately through the front electrode 65.
Preferably, the number of the front electrode assemblies 6 is two, and the two sets of the front electrode assemblies 6 are respectively located at the upper left and upper right of the processing station 13 to make the pressure distribution of the reverse bias voltage applied to the metal grid line 91 of the battery sheet 9 more uniform.
Specifically, referring to fig. 2-3, a driving member 22 (as shown in fig. 3) is mounted on the surface of the table 1, and an output end of the driving member 22 is rotationally connected with the rotary table 2 at a rotation axis, so that the output end of the driving member 22 can drive the rotary table 2 to perform a rotation motion. In practice, the drive 22 is a DD motor or other conventional drive. An electric slip ring 23 (shown in fig. 3) is connected above the output end of the driving piece 22; the back electrode device 5 is mounted on the jigs 21, and preferably, each jig 21 is mounted with the back electrode device 5, the electrical slip ring 23 is electrically connected to the back electrode device 5, and the electrical slip ring 23 is electrically connected to the positive electrode of the power source 8. Thus, the positive electrode of the power supply 8 can act on the metal grid line 91 on the lower surface of the battery piece 9 through the electric slip ring 23, the back electrode device 5 and the jig 21 in sequence, and further loading of reverse bias voltage of the metal grid line 91 is realized.
In practice, the rotating part of the electric slip ring 23 is connected to the output end of the driving member 22 to rotate together with the output end of the driving member 22; the fixed portion of the electrical slip ring 23 is electrically connected to the positive electrode of the power supply 8 to prevent wiring from being wound. The electrical slip ring 23 is of a prior art structure, and thus the specific structure thereof will not be described.
In one example of the present embodiment, the controller 7 includes a host computer 71, a motion control card 72, and a laser control card 73, and the motion control card 72 and the laser control card 73 are both electrode host computers 71. The motion control card 72 is electrically connected to the driving element 22 of the turntable 2, the Y-axis moving mechanism 62, the X-axis moving mechanism 64, and the power supply 8. The host computer 71 can control the relative operations of the driving member 22, the Y-axis moving mechanism 62 and the X-axis moving mechanism 64 through the motion control card 72. The laser control card 73 is electrically connected with the laser light source 4 and the laser scanning galvanometer 41, so that the upper computer 71 can control the laser light source 4 and the laser scanning galvanometer 41 to work through the laser control card 73 so as to adjust the position of the emitted laser. The upper computer 71 is also electrically connected with the power supply 8 and the positioning device 3, so that the upper computer 71 can control the positioning device 3 to complete the visual positioning work of the battery piece 9 and the metal grid line 91. Of course, in other examples, the controller 7 may also employ other existing control structures.
In practice, the upper computer 71, the motion control card 72, the laser control card 73, the Y-axis moving mechanism 62 and the X-axis moving mechanism 64 are all of the prior art structure, so that the description thereof will be omitted.
Further, the cabinet 16 is arranged below the workbench 1, and the upper computer 71, the motion control card 72, the laser control card 73 and the power supply 8 are all arranged in the cabinet 16, so that the overall structure layout is more compact and reasonable.
In the above example of the present embodiment, the operation procedure of the device for improving the contact resistance of the crystalline silicon battery is as follows:
(1) Firstly, placing a battery piece 9 on a jig 21 on the surface of the rotary table 2 corresponding to the feeding station 11;
(2) The upper computer 71 controls the driving piece 22 to rotate through the motion control card 72 so that the rotary table 2 and the battery piece 9 rotate along with the driving piece 22 to enter the positioning station 12, and then the positioning device 3 performs visual correction positioning on one or more visual features of a main grid line 911, a secondary grid line 912, an outer contour 93 of the battery piece 9 and mark points 92 corresponding to the metal grid line 91 on the surface of the battery piece 9 shown in fig. 4 on the battery piece 9 through image comparison, and transmits visual correction positioning information to the upper computer 71;
(3) The upper computer 71 controls the driving piece 22 to rotate through the motion control card 72 so that the rotary table 2 and the battery piece 9 enter the processing station 13 along with the rotation of the driving piece 22; then, the upper computer 71 controls the Y-axis moving mechanism 62 and the X-axis moving mechanism 64 to move up and down and left and right respectively through the motion control card 72, so that the front electrode 65 moves to contact the metal grid line 91 on the upper surface of the battery piece 9, so that the negative electrode of the power supply 8 acts on the metal grid line 91 on the upper surface through the front electrode 65, and the positive electrode of the power supply 8 acts on the metal grid line 91 on the lower surface of the battery piece 9 sequentially through the electric slip ring 23, the back electrode device 5 and the jig 21, so as to load reverse bias on the metal grid line 91 of the battery piece 9; at the same time, the upper computer 71 controls the laser light source 4 and the laser scanning galvanometer 41 to work through the laser control card 73 so as to adjust the position of the emitted laser, and the adjusted laser irradiates the metal grid line 91 of the battery piece 9, so that the metal grid line 91 of the battery piece 9 is subjected to secondary melting sintering treatment.
(4) The upper computer 71 controls the driving piece 22 to rotate through the motion control card 72, so that the rotary table 2 and the battery piece 9 rotate along with the driving piece 22 to enter the blanking station 14 for blanking, and the improvement of the metallization performance of the semiconductor and the metal grid line 91 of the battery piece 9 can be completed, so that the contact resistance loss of the metal-semiconductor is reduced.
While preferred embodiments of the present utility model have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the utility model.
The foregoing has outlined rather broadly the more detailed description of the utility model in order that the detailed description of the utility model that follows may be better understood, and in order that the present principles and embodiments may be better understood; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present utility model, the present description should not be construed as limiting the present utility model in view of the above.
Claims (11)
1. The device for improving the contact resistance of the crystalline silicon battery is characterized by comprising a controller, a workbench and a rotary table rotatably arranged on the workbench surface, wherein a feeding station, a positioning station, a processing station and a discharging station are sequentially distributed at the circumferential position of the rotary table corresponding to the workbench surface, and a battery piece is placed on the rotary table corresponding to the feeding station, so that the battery piece sequentially passes through the positioning station, the processing station and the discharging station along with the rotation of the rotary table;
a positioning device for visually positioning the battery piece is arranged above the positioning station;
a laser light source and a laser scanning galvanometer which are communicated are arranged above the treatment station; the controller is electrically connected with the positioning device, the laser light source and the laser scanning galvanometer, so that the controller controls the laser scanning galvanometer to adjust the position of the laser light source and then irradiate the metal grid line of the battery piece;
the front electrode assembly which can move downwards to be in contact with the upper surface of the battery piece is further arranged above the treatment station, the back electrode device which is in contact with the lower surface of the battery piece is arranged below the treatment station, and the front electrode assembly and the back electrode device are respectively and electrically connected with the negative electrode and the positive electrode of a power supply so as to load reverse bias voltage on the metal grid line irradiated by laser.
2. The device for improving the contact resistance of the crystalline silicon battery according to claim 1, wherein the workbench surface is provided with a gantry beam, and an upper beam of the gantry beam is positioned above the rotary table; the laser light source is arranged on the upper cross beam, the laser light source is communicated with the laser scanning galvanometer, and a light outlet is formed below the laser scanning galvanometer, so that the adjusted laser irradiates on the metal grid line through the light outlet.
3. The device for improving contact resistance of crystalline silicon cell according to claim 2, wherein the upper beam is further connected with a first mounting frame, and a lower end of the first mounting frame is connected with the positioning device.
4. The device for improving contact resistance of a crystalline silicon cell according to claim 2, wherein the controller is further electrically connected to a display mounted on a side of the gantry beam remote from the processing station.
5. The apparatus for improving contact resistance of a crystalline silicon cell as defined in claim 2, wherein the front electrode assembly comprises a second mounting frame connected to the upper beam, a Y-axis moving mechanism mounted to the second mounting frame so as to be movable up and down, and a front electrode connected to a lower portion of the Y-axis moving mechanism, the front electrode being electrically connected to a negative electrode of the power supply.
6. The apparatus for improving contact resistance of a crystalline silicon cell as recited in claim 5, wherein the front electrode assembly further comprises a third mount coupled to the Y-axis moving mechanism and an X-axis moving mechanism mounted below the third mount so as to be movable left and right, and the front electrode is coupled below the X-axis moving mechanism.
7. The apparatus of claim 1, wherein the number of front electrode assemblies is two, and the two front electrode assemblies are respectively positioned at the upper left and upper right of the processing station.
8. The device for improving the contact resistance of the crystalline silicon battery according to claim 1, wherein the working table surface is provided with a driving piece, the output end of the driving piece is rotationally connected with the rotary table at the rotation axis, and an electric slip ring is connected above the output end of the driving piece;
the rotary table top is provided with a jig for placing the battery piece, the back electrode device is arranged on the jig, and the electric slip ring is electrically connected with the back electrode device and the positive electrode of the power supply.
9. The device for improving contact resistance of a crystalline silicon cell according to claim 8, wherein the jigs are arranged on rotary table tops corresponding to the feeding station, the positioning station, the processing station and the discharging station, and each jig is provided with the back electrode device.
10. The device for improving contact resistance of a crystalline silicon battery according to claim 1, wherein the controller comprises an upper computer, a motion control card and a laser control card, wherein the motion control card is electrically connected with a driving piece of the rotary table, a moving mechanism of a front electrode assembly and a power supply, the laser control card is electrically connected with the laser light source and the laser scanning galvanometer, and the upper computer is further electrically connected with the power supply and the positioning device.
11. The device for improving contact resistance of a crystalline silicon cell according to claim 10, wherein a cabinet is arranged below the workbench, and the upper computer, the motion control card, the laser control card and the power supply are installed in the cabinet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321353407.3U CN219842996U (en) | 2023-05-30 | 2023-05-30 | Device for improving contact resistance of crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN117374166A (en) * | 2023-12-06 | 2024-01-09 | 武汉帝尔激光科技股份有限公司 | Processing method for laser-induced sintering of solar cell |
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| CN117374166A (en) * | 2023-12-06 | 2024-01-09 | 武汉帝尔激光科技股份有限公司 | Processing method for laser-induced sintering of solar cell |
| CN117374166B (en) * | 2023-12-06 | 2024-04-02 | 武汉帝尔激光科技股份有限公司 | Processing method for laser-induced sintering of solar cell |
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