CN112449679A - 前驱物输送系统及其相关方法 - Google Patents
前驱物输送系统及其相关方法 Download PDFInfo
- Publication number
- CN112449679A CN112449679A CN201980048382.6A CN201980048382A CN112449679A CN 112449679 A CN112449679 A CN 112449679A CN 201980048382 A CN201980048382 A CN 201980048382A CN 112449679 A CN112449679 A CN 112449679A
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- gas
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000002243 precursor Substances 0.000 title description 10
- 230000005855 radiation Effects 0.000 claims abstract description 145
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910000085 borane Inorganic materials 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 147
- 230000003287 optical effect Effects 0.000 claims description 88
- 238000012545 processing Methods 0.000 claims description 49
- 238000010521 absorption reaction Methods 0.000 claims description 47
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 28
- 230000005540 biological transmission Effects 0.000 claims description 28
- 229910052796 boron Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000000862 absorption spectrum Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 239000003085 diluting agent Substances 0.000 description 8
- 241000894007 species Species 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001303000 Amperea Species 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- -1 tetraborane) Chemical compound 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862712627P | 2018-07-31 | 2018-07-31 | |
US62/712,627 | 2018-07-31 | ||
PCT/US2019/041056 WO2020027991A1 (en) | 2018-07-31 | 2019-07-09 | Precursor delivery system and methods related thereto |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112449679A true CN112449679A (zh) | 2021-03-05 |
Family
ID=69231289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980048382.6A Pending CN112449679A (zh) | 2018-07-31 | 2019-07-09 | 前驱物输送系统及其相关方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7485652B2 (ko) |
KR (1) | KR20210027267A (ko) |
CN (1) | CN112449679A (ko) |
SG (1) | SG11202010408SA (ko) |
WO (1) | WO2020027991A1 (ko) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101010446A (zh) * | 2004-07-27 | 2007-08-01 | 应用材料公司 | 封闭回路清洁气体方法和系统 |
CN104513970A (zh) * | 2014-12-25 | 2015-04-15 | 贵州大学 | 一种制备硼化镁超导薄膜的装置及其制备方法 |
CN105651729A (zh) * | 2014-12-02 | 2016-06-08 | 株式会社堀场Stec | 分解检测装置、浓度测量装置和浓度控制装置 |
CN205301167U (zh) * | 2015-12-28 | 2016-06-08 | 保定市北方特种气体有限公司 | 一种气体浓度检测装置 |
US9388491B2 (en) * | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
CN108220922A (zh) * | 2016-12-15 | 2018-06-29 | 东京毅力科创株式会社 | 成膜方法、硼膜以及成膜装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000178734A (ja) | 1998-12-18 | 2000-06-27 | Tokyo Electron Ltd | タングステン膜の成膜方法 |
US6592817B1 (en) | 2000-03-31 | 2003-07-15 | Applied Materials, Inc. | Monitoring an effluent from a chamber |
US20020152797A1 (en) * | 2001-01-09 | 2002-10-24 | Mcandrew James J.F. | Gas delivery apparatus and method for monitoring a gas phase species therein |
US7129519B2 (en) | 2002-05-08 | 2006-10-31 | Advanced Technology Materials, Inc. | Monitoring system comprising infrared thermopile detector |
US6947138B2 (en) | 2003-06-16 | 2005-09-20 | Advanced Technology Materials, Inc. | Optical sensor system and method for detection of hydrides and acid gases |
KR101241922B1 (ko) * | 2005-06-22 | 2013-03-11 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 통합 가스 배합 장치 및 방법 |
JP2007285842A (ja) | 2006-04-17 | 2007-11-01 | Nippon Koden Corp | ガス濃度測定装置 |
JP6795371B2 (ja) * | 2016-10-14 | 2020-12-02 | 株式会社神鋼エンジニアリング&メンテナンス | ホウ素濃度計及びホウ素濃度の推定方法 |
-
2019
- 2019-07-09 WO PCT/US2019/041056 patent/WO2020027991A1/en active Application Filing
- 2019-07-09 CN CN201980048382.6A patent/CN112449679A/zh active Pending
- 2019-07-09 SG SG11202010408SA patent/SG11202010408SA/en unknown
- 2019-07-09 KR KR1020207036171A patent/KR20210027267A/ko not_active Application Discontinuation
- 2019-07-09 JP JP2021504349A patent/JP7485652B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101010446A (zh) * | 2004-07-27 | 2007-08-01 | 应用材料公司 | 封闭回路清洁气体方法和系统 |
US9388491B2 (en) * | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
CN105651729A (zh) * | 2014-12-02 | 2016-06-08 | 株式会社堀场Stec | 分解检测装置、浓度测量装置和浓度控制装置 |
CN104513970A (zh) * | 2014-12-25 | 2015-04-15 | 贵州大学 | 一种制备硼化镁超导薄膜的装置及其制备方法 |
CN205301167U (zh) * | 2015-12-28 | 2016-06-08 | 保定市北方特种气体有限公司 | 一种气体浓度检测装置 |
CN108220922A (zh) * | 2016-12-15 | 2018-06-29 | 东京毅力科创株式会社 | 成膜方法、硼膜以及成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
SG11202010408SA (en) | 2021-02-25 |
JP7485652B2 (ja) | 2024-05-16 |
JP2021532592A (ja) | 2021-11-25 |
WO2020027991A1 (en) | 2020-02-06 |
KR20210027267A (ko) | 2021-03-10 |
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