JP2021532592A - 前駆体供給システム及びそれに関連する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000002243 precursor Substances 0.000 title description 9
- 230000005855 radiation Effects 0.000 claims abstract description 143
- 238000012545 processing Methods 0.000 claims abstract description 64
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910000085 borane Inorganic materials 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims description 154
- 238000010521 absorption reaction Methods 0.000 claims description 47
- 230000005540 biological transmission Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- ZKSPHENWXBWOPM-UHFFFAOYSA-N 2-methylprop-2-enoic acid oxochromium Chemical compound CC(=C)C(=O)O.O=[Cr] ZKSPHENWXBWOPM-UHFFFAOYSA-N 0.000 claims 1
- 235000003889 Paeonia suffruticosa Nutrition 0.000 abstract description 2
- 240000005001 Paeonia suffruticosa Species 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 129
- 238000000862 absorption spectrum Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000015654 memory Effects 0.000 description 9
- 241000894007 species Species 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- -1 tetraborane Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/06—Investigating concentration of particle suspensions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Spectroscopy & Molecular Physics (AREA)
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- Investigating Or Analysing Materials By Optical Means (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 本体、
複数のウインドウであって、前記複数のウインドウの個々が前記本体の対向する端部に配置され、前記本体と前記複数のウインドウとがセル空間を画定する、複数のウインドウ、
前記複数のウインドウの第1のウインドウの近傍で、前記セル空間の外側に配置された放射線源、及び
前記複数のウインドウの第2のウインドウの近傍で、前記セル空間の外側に配置された第1の放射線検出器を備える、ボラン濃度センサ。 - 前記第1のウインドウと前記第2のウインドウのうちの一方又は両方が、MgF2、KBr、サファイヤ、又はそれらの組み合わせから形成される、請求項1に記載のボラン濃度センサ。
- 前記第1の放射線検出器と前記第2のウインドウとの間に介在する第1の光学フィルタを更に備える、請求項1に記載のボラン濃度センサ。
- 前記第1の光学フィルタが、ジボランのIR吸収ピークの約+/−250nm以内又はテトラボランのIR吸収ピークの約+/−250nm以内の中心透過波長λCを有する、請求項3に記載のボラン濃度センサ。
- 第2の放射線検出器、及び前記放射線源と前記第2の放射線検出器との間に配置された第2の光学フィルタを更に備え、前記第1の光学フィルタは、ジボランのIR吸収ピークの約+/−250nm以内の中心透過波長λCを有し、前記第2の光学フィルタは、テトラボランのIR吸収ピークの約+/−250nm以内の中心透過波長を有する、請求項3に記載のボラン濃度センサ。
- 基板を処理する方法であって、
光学センサを使用して、第1のガス源と処理チャンバとを流体結合するガス導管から採取されたガス試料内のジボラン濃度を特定すること、
前記第1のガス源からの第1のガス、第2のガス源からの第2のガス、又はそれらの両方の流量を変化させることによって、所望のジボラン濃度を有するホウ素ドーピングガスを混合すること、及び
前記ホウ素ドーピングガスを前記処理チャンバの処理空間に供給することを含む、方法。 - 前記光学センサが、
本体、
複数のウインドウであって、前記複数のウインドウの個々が前記本体の対向する端部に配置され、前記本体と前記複数のウインドウとがセル空間を画定する、複数のウインドウ、
前記複数のウインドウの第1のウインドウの近傍で、前記セル空間の外側に配置された放射線源、及び
前記複数のウインドウの第2のウインドウの近傍で、前記セル空間の外側に配置された第1の放射線検出器を備える、請求項6に記載の方法。 - 前記第1のウインドウと前記第2のウインドウのうちの一方又は両方が、MgF2、KBr、サファイヤ、又はそれらの組み合わせから形成される、請求項7に記載の方法。
- 前記光学センサが、第2の放射線検出器を更に備える、請求項7に記載の方法。
- 前記光学センサが、前記第1の放射線検出器と前記第2のウインドウとの間に介在する第1の光学フィルタを更に備える、請求項7に記載の方法。
- 前記第1の光学フィルタが、ジボランのIR吸収ピークの約+/−250nm以内又はテトラボランのIR吸収ピークの約+/−250nm以内の中心透過波長λCを有する、請求項10に記載の方法。
- 前記光学センサが、第2の放射線検出器、及び前記放射線源と前記第2の放射線検出器との間に配置された第2の光学フィルタを更に備え、前記第1の光学フィルタは、ジボランのIR吸収ピークの約+/−250nm以内の中心透過波長λCを有し、前記第2の光学フィルタは、テトラボランのIR吸収ピークの約+/−250nm以内の中心透過波長を有する、請求項10に記載の方法。
- 基板を処理する方法についての指示命令が記憶されたコンピュータ可読媒体を備える処理システムであって、前記方法が、
光学センサを使用して、第1のガス源と処理チャンバとを流体結合するガス導管から採取されたガス試料内のジボラン濃度を特定すること、
前記第1のガス源からの第1のガス、第2のガス源からの第2のガス、又はそれらの両方の流量を変化させることによって、所望のジボラン濃度を有するホウ素ドーピングガスを混合すること、及び
前記ホウ素ドーピングガスを処理チャンバの処理空間に供給することを含む、処理システム。 - 前記光学センサが、
本体、
複数のウインドウであって、前記複数のウインドウの個々が前記本体の対向する端部に配置され、前記本体と前記複数のウインドウとがセル空間を画定する、複数のウインドウ、
前記複数のウインドウの第1のウインドウの近傍で、前記セル空間の外側に配置された放射線源、及び
前記複数のウインドウの第2のウインドウの近傍で、前記セル空間の外側に配置された第1の放射線検出器を備える、請求項13に記載の処理システム。 - 前記光学センサの前記第1のウインドウと前記第2のウインドウのうちの一方又は両方が、MgF2、KBr、サファイヤ、又はそれらの組み合わせから形成される、請求項14に記載の処理システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862712627P | 2018-07-31 | 2018-07-31 | |
US62/712,627 | 2018-07-31 | ||
PCT/US2019/041056 WO2020027991A1 (en) | 2018-07-31 | 2019-07-09 | Precursor delivery system and methods related thereto |
Publications (3)
Publication Number | Publication Date |
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JP2021532592A true JP2021532592A (ja) | 2021-11-25 |
JPWO2020027991A5 JPWO2020027991A5 (ja) | 2022-07-20 |
JP7485652B2 JP7485652B2 (ja) | 2024-05-16 |
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JP2021504349A Active JP7485652B2 (ja) | 2018-07-31 | 2019-07-09 | 前駆体供給システム及びそれに関連する方法 |
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JP (1) | JP7485652B2 (ja) |
KR (1) | KR20210027267A (ja) |
CN (1) | CN112449679A (ja) |
SG (1) | SG11202010408SA (ja) |
WO (1) | WO2020027991A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000178734A (ja) * | 1998-12-18 | 2000-06-27 | Tokyo Electron Ltd | タングステン膜の成膜方法 |
JP2002033312A (ja) * | 2000-03-31 | 2002-01-31 | Applied Materials Inc | チャンバからの排出ガスモニタリング |
US20060012794A1 (en) * | 2003-06-16 | 2006-01-19 | Arno Jose I | Optical sensor system and method for detection of hydrides and acid gases |
JP2007506974A (ja) * | 2003-09-23 | 2007-03-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 赤外線熱電堆検出器を備える監視システム |
JP2007285842A (ja) * | 2006-04-17 | 2007-11-01 | Nippon Koden Corp | ガス濃度測定装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020152797A1 (en) * | 2001-01-09 | 2002-10-24 | Mcandrew James J.F. | Gas delivery apparatus and method for monitoring a gas phase species therein |
US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
TWI552797B (zh) * | 2005-06-22 | 2016-10-11 | 恩特葛瑞斯股份有限公司 | 整合式氣體混合用之裝置及方法 |
US9388491B2 (en) * | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
JP6435175B2 (ja) * | 2014-12-02 | 2018-12-05 | 株式会社堀場エステック | 分解検出装置、分解検出方法、分解検出装置用プログラム、濃度測定装置、及び、濃度制御装置 |
CN104513970B (zh) * | 2014-12-25 | 2017-02-22 | 贵州大学 | 一种制备硼化镁超导薄膜的方法 |
CN205301167U (zh) * | 2015-12-28 | 2016-06-08 | 保定市北方特种气体有限公司 | 一种气体浓度检测装置 |
JP6795371B2 (ja) * | 2016-10-14 | 2020-12-02 | 株式会社神鋼エンジニアリング&メンテナンス | ホウ素濃度計及びホウ素濃度の推定方法 |
CN108220922B (zh) * | 2016-12-15 | 2020-12-29 | 东京毅力科创株式会社 | 成膜方法、硼膜以及成膜装置 |
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2019
- 2019-07-09 KR KR1020207036171A patent/KR20210027267A/ko not_active Application Discontinuation
- 2019-07-09 JP JP2021504349A patent/JP7485652B2/ja active Active
- 2019-07-09 CN CN201980048382.6A patent/CN112449679A/zh active Pending
- 2019-07-09 SG SG11202010408SA patent/SG11202010408SA/en unknown
- 2019-07-09 WO PCT/US2019/041056 patent/WO2020027991A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000178734A (ja) * | 1998-12-18 | 2000-06-27 | Tokyo Electron Ltd | タングステン膜の成膜方法 |
JP2002033312A (ja) * | 2000-03-31 | 2002-01-31 | Applied Materials Inc | チャンバからの排出ガスモニタリング |
US20060012794A1 (en) * | 2003-06-16 | 2006-01-19 | Arno Jose I | Optical sensor system and method for detection of hydrides and acid gases |
JP2007506974A (ja) * | 2003-09-23 | 2007-03-22 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 赤外線熱電堆検出器を備える監視システム |
JP2007285842A (ja) * | 2006-04-17 | 2007-11-01 | Nippon Koden Corp | ガス濃度測定装置 |
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SG11202010408SA (en) | 2021-02-25 |
KR20210027267A (ko) | 2021-03-10 |
JP7485652B2 (ja) | 2024-05-16 |
CN112449679A (zh) | 2021-03-05 |
WO2020027991A1 (en) | 2020-02-06 |
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