CN1124353C - Copper-tungsten carbide contact material - Google Patents
Copper-tungsten carbide contact material Download PDFInfo
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- CN1124353C CN1124353C CN 00126115 CN00126115A CN1124353C CN 1124353 C CN1124353 C CN 1124353C CN 00126115 CN00126115 CN 00126115 CN 00126115 A CN00126115 A CN 00126115A CN 1124353 C CN1124353 C CN 1124353C
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Abstract
The present invention relates to a copper-base no-silver contact material and an application of the copper-base no-silver contact material in a low-voltage electric leakage switch. The copper-base no-silver contact material comprises the following components of 8% to 10% (weight percentage) of copper tungsten and 0.8% to 2% (weight percentage) of graphite, and the rest is copper. The copper-tungsten carbide contact material does not use silver, but still improves the performance of the material. The present invention is used for making a fixed contact of the low-voltage electric leakage switch.
Description
The invention belongs to a kind of metal alloy compositions, especially a kind of copper based no silver contact material, and the application of this material in the low pressure leakage switch.
In the prior art, electrician's contact that low-voltage apparatus adopts is a money base always, and as materials such as AgZn010, this silver based contact material has consumed a large amount of precious metals silvers.In recent years, people adopt copper-base contact material for saving the consumption of precious metals silver.Disclosing a kind of copper-based non-silver as Chinese invention patent specification sheets CN1224768A does not have every alloy material for low-voltage electrical contact, it is by the first phase core constituent element copper, the second phase core skeleton constituent element diamond and third phase add constituent element and form, it is to play to improve electrical contact surface liquid phase and affixed sticking power that this third phase adds constituent element, and the formation that reduces surface in contact and contact matrix cracking finally reaches the non-cadmium of reduction electric arc etch and the metallic element or the non-metallic element of cadmium oxide compound with expansion.The index that is reached is as follows: density is not less than 8.2*103 (Kg/m3), and resistance is not more than 3.5 μ Ω cm, and hardness is not less than 500MPa, and the hardness of this contact material is still not high enough, is difficult to guarantee the reliability of low-voltage apparatus contact work.This material contact of while, anti-melting welding ability and electric life are lower when work.
Application for a patent for invention 87103076 discloses a kind of electric contact material of copper-based alloy, is particularly suitable for doing the contact of low-voltage automatic switche, with wolfram varbide 3-10 weight %, and graphite 2-5 weight %, all the other are the proportioning of copper, adopt powder metallurgy technology to produce.This material is still having certain limitation aspect processing characteristics, the electric life.
The purpose of this invention is to provide a kind of copper-tungsten carbide contact material, but it is replacing silver with copper both, reaches the saving noble metal, can guarantee to have under the prerequisite of sufficiently high hardness and intensity again, make material have lower contact resistance, anti-preferably melting welding ability and high electric life.
Another object of the present invention provides the application of a kind of copper-tungsten carbide contact material in the low pressure leakage switch.
Copper-tungsten carbide contact material provided by the present invention contains component and weight percent is: wolfram varbide 8-10%, graphite 0.8-2%, zinc 0.01-0.1%, nickel 0.01-0.1%, III-th family subgroup lanthanon 0.05-0.1%, copper surplus.
Copper-tungsten carbide contact material of the present invention can be used for the static contact of low pressure leakage switch.
Copper-tungsten carbide contact material of the present invention contains wolfram varbide, wolfram varbide is the very high refractory metal compound of a kind of hardness, higher chemical stability and semi-conductor electroconductibility are arranged, it joins in the high conductivity copper matrix, guaranteeing greatly to have improved the hardness and the wear resistance of copper-tungsten carbide contact material of the present invention on the copper excellent electrical properties basis.In the copper-tungsten carbide contact material of the present invention, add an amount of deflocculated graphite, make on the one hand the present invention be material make the contact disjunction time under the effect of hard arc, melting welding is not taken place by adhesion in the local fused copper that takes place of contact surface; On the other hand, the high temperature that hard arc produces during material contact disjunction of the present invention makes the carbon monoxide of the oxidized generation of graphite particle; protection copper matrix is not oxidized; have the excellent contact state during contact closure, can obtain low contact resistance, reduce the temperature rise of electrical equipment.Therefore the present invention has anti-preferably melting welding.Material contact of the present invention has in addition added deflocculated graphite, is a kind of special lubricant, and a slipping is arranged when switch contact is closed, promotes that contact surface has lower contact resistance.Make this contact material that high electric life be arranged.It is the wolfram varbide of 3 μ that the present invention adopts mean particle size, and mean particle size is that the Graphite Powder 99 and the trade mark of 2.3 μ is FTD
2Copper cooperate, the trade mark is FTD
2Copper be meant that purity is the electrolytic copper powder more than 99.8%, to obtain good dispersity and uniformity coefficient.
The present invention adds trace additives, and Zn, Ni and lanthanon its objective is the raising electric life, because Zn, Ni form not labile ZnO and NiO particle under the high arc temperature effect; The adding of lanthanon can improve processing performance.
Copper-tungsten carbide contact material of the present invention adopts Cu-TG contact material technical process (each component is formed batching → mixing → check → change granulation → moulding → check → sintering → multiple pressure → aftertreatment → check) to make.For obtaining good structure, technological process must the group of taking be changed granulation, because mobile well deflocculated graphite is arranged in the compound, operating process is easy to cause segregation, and compound can keep the dispersiveness and the uniformity coefficient of each composition of compound after a change processing.
Below in conjunction with embodiment the present invention is elaborated:
Embodiment 1: with component and weight percent be: mean particle size is 3 μ wolfram varbides 9.5%, and mean particle size is the graphite 1.6% of 2.3 μ, and Zn 0.06%, and Ni 0.06%, and La 0.07%, FTD
2The copper powder surplus.The technical process of adopting with the Cu-TG contact material makes its density: 8.2g/cm3, resistivity: 3.0 μ Ω cm, hardness: 800MPa.
Embodiment 2: with component and weight percent be: mean particle size is 3 μ wolfram varbides 10%, and mean particle size is the graphite 1.6% of 2.3 μ, and Zn 0.1%, and Ni 0.1%, and Ce 0.07%, FTD
2The copper powder surplus.The technical process of adopting with the Cu-TG contact material makes.Its density: 8.0g/cm3, resistivity: 3.5 μ Ω cm, hardness: 750MPa.
Embodiment 3: with component and weight percent be: mean particle size is 3 μ wolfram varbides 10%, and mean particle size is the graphite 2% of 2.3 μ, and Zn 0.1%, and Ni 0.1%, and La 0.07%, FTD
2The copper powder surplus.The technical process of adopting with the Cu-TG contact material makes.Its density: 8.0g/cm3, resistivity: 3.5 μ Ω cm, hardness: 750MPa.
Embodiment 4: with component and weight percent be: mean particle size is 3 μ wolfram varbides 8%, and mean particle size is the graphite 0.8% of 2.3 μ, and Zn 0.01%, and Ni 0.01%, La0.05%, FTD
2The copper powder surplus.The technical process of adopting with the Cu-TG contact material makes its density: 8.2g/cm3, resistivity: 3.0 μ Ω cm, hardness: 800MPa.
Contact material physicochemical property of the present invention is as follows:
Density is not less than 8.0g/cm3
Resistivity is not more than 3.5 μ Ω cm
Hardness HB is not less than 750MPa
Copper-tungsten carbide contact material of the present invention can be used for making the static contact of DZ15LE-40 type or DZ15LE-100 type isolating switch, uses with the pairing of argentiferous moving contact.Compare DZ15LE-40 type joint silver 66.7% with AgZn010/AgZn010, than DZ15LE-100 type joint silver 52.8%; And anti-preferably melting welding ability is arranged, and prolonged the electric life of product.Through checking performances such as its temperature rise, making capacity, breaking capacity, thermostability, mechanical life all to meet low pressure leakage switch DZ15LE series product standard-required.
Claims (2)
1, a kind of copper-tungsten carbide contact material is characterized in that: it contains component and is (weight percent)
Wolfram varbide 8-10%
Graphite 0.8-2%
Zinc 0.01-0.1%
Nickel 0.01-0.1%
III-th family subgroup lanthanon 0.05-0.1%
Copper surplus.
2, copper-tungsten carbide contact material according to claim 1 is in the application of low pressure leakage switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00126115 CN1124353C (en) | 2000-08-21 | 2000-08-21 | Copper-tungsten carbide contact material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00126115 CN1124353C (en) | 2000-08-21 | 2000-08-21 | Copper-tungsten carbide contact material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1338527A CN1338527A (en) | 2002-03-06 |
| CN1124353C true CN1124353C (en) | 2003-10-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00126115 Expired - Fee Related CN1124353C (en) | 2000-08-21 | 2000-08-21 | Copper-tungsten carbide contact material |
Country Status (1)
| Country | Link |
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| CN (1) | CN1124353C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316047C (en) * | 2005-02-06 | 2007-05-16 | 陈晓 | Copper-tungsten-carbon-titanium-rare earth alloy material and production thereof |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699591B (en) * | 2009-10-30 | 2012-01-11 | 西安福莱电工合金有限公司 | Integrated contact of copper-tungsten contact part /copper or copper alloy conductive rod and preparation method thereof |
| CN102899551B (en) * | 2012-11-07 | 2014-12-10 | 福达合金材料股份有限公司 | Silver-saving silver tungsten carbide graphite electrical contact material for high-performance low-voltage circuit breaker |
| CN105861864A (en) * | 2016-04-16 | 2016-08-17 | 苏州思创源博电子科技有限公司 | Preparation method of alloy electrical contact material |
| CN105886830B (en) * | 2016-05-27 | 2020-11-13 | 乐清市龙强合金有限公司 | High-performance special copper-based contact material and preparation process thereof |
| CN108080643B (en) * | 2017-12-14 | 2020-03-31 | 陈赛飞 | Preparation method of powder metallurgy wear-resistant lubricating block for railway high-voltage isolating switch contact |
| CN111411280A (en) * | 2020-03-03 | 2020-07-14 | 福达合金材料股份有限公司 | Copper tungsten carbide diamond composite electrical contact material and preparation method thereof |
-
2000
- 2000-08-21 CN CN 00126115 patent/CN1124353C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316047C (en) * | 2005-02-06 | 2007-05-16 | 陈晓 | Copper-tungsten-carbon-titanium-rare earth alloy material and production thereof |
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| Publication number | Publication date |
|---|---|
| CN1338527A (en) | 2002-03-06 |
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