CN105861864A - Preparation method of alloy electrical contact material - Google Patents
Preparation method of alloy electrical contact material Download PDFInfo
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- CN105861864A CN105861864A CN201610234784.3A CN201610234784A CN105861864A CN 105861864 A CN105861864 A CN 105861864A CN 201610234784 A CN201610234784 A CN 201610234784A CN 105861864 A CN105861864 A CN 105861864A
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- copper
- powder
- contact material
- graphite alkene
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Contacts (AREA)
Abstract
The invention discloses a preparation method of an alloy electrical contact material. The alloy electrical contact material comprises 55-70wt% of tungsten carbide, 0.2-0.5wt% of a nickel element, 0.5-1wt% of a lanthanum element, 3.5-4.5wt% of copper plated graphene, inevitable impurities and the balance copper. According to the alloy electrical contact material prepared through the preparation method, by optimizing selection of the matching ratio of raw materials and the technology, the structural evenness of the material is improved, the electrical performance of the material is improved, interface wettability between graphene and metal is improved through the copper plated graphene, good interface combination can be obtained easily, the electrical conductivity, the heat conducting performance and the arc-erosion-resistant performance of the composite material can be further improved, and the performance requirement of an electrical contact is better met.
Description
Technical field
The present invention relates to power equipment and manufacture field, be specifically related to the preparation method of a kind of alloy electric contact material.
Background technology
At present, electric contact material substantially can be divided into following a few class: cuprio slider material, tungstenio slider material, cuprio slider material and noble metal base light current contactor material.Wherein, the most representational slider material is Cu-W alloy and Ag base slider material (AgSnO2, AgCdO, Ag-W system etc.) two big classes.Owing to W, Ag etc. belong to noble metal, resource reserve is limited, and uses such noble metal to make the cost of slider material prohibitively expensive as raw material, is unfavorable for popularization and application.
Contact is needed to require as follows by vacuum circuit breaker: high current breaking capacity；Low value of damming；Preferably voltage carrying capacity；Low and stable contact resistance and temperature rise；Relatively high abrasion and fusion welding resisting ability；But these requirements contradiction each other, it is impossible to meet all these requirement with a kind of metal.Such as, current breaking capacity is affected by material melting point and vapour pressure with value of damming.Vapour pressure is high, and alloy has the highest listens value of damming, and on the contrary, then current breaking capacity can be significantly affected.Thus, to answer in used alloy material in a lot of reality, element that can be complementary to its not enough performance of major general two kinds is used in combination.
Copper-base contact material due to cheap, conduction, heat conductivility close with silver, the most part replace cuprio contact, minimizing noble silver loss.But, owing to copper contact material easily aoxidizes, generate copper oxide and the Red copper oxide with low-resistivity, increase the contact resistance of contact elements so that it is the most easily generate heat, cause the reliability of contact material and service life to be reduced.
Summary of the invention
The present invention provides the preparation method of a kind of alloy electric contact material, this alloy electric contact material, has electrical property and the mechanical performance of excellence.
To achieve these goals, realize above-mentioned purpose, the invention provides the preparation method of a kind of alloy electric contact material, alloy electric contact material includes tungsten carbide, nickel and copper-plated graphite alkene, wherein the content of tungsten carbide is 55-70wt%, and the constituent content of nickel is 0.2-0.5wt%, and the content of the element of lanthanum is 0.5-1wt%, copper-plated graphite alkene 3.5-4.5wt% and inevitably impurity, surplus element is copper；
The method comprises the steps:
(1) copper-plated graphite alkene powder is prepared
Direct current magnetron sputtering process is used to make copper-plated graphite alkene at graphenic surface deposition argent, first polish with fine sandpaper before the copper target that purity is 99.99% is installed, remove surface film oxide, clean with acetone again, dry, 10 minutes pre-sputterings are carried out before Deposited By Dc Magnetron Sputtering, baffle plate is used to be separated with Graphene by target, remove metal-oxide and other impurity of target material surface, ensure the purity of follow-up graphenic surface deposition copper film, the technological parameter of magnetically controlled DC sputtering is: target be purity be the copper target of 99.99%, reach 0.1 × 10 in vacuum-3-1.0×10-3During Pa, being passed through the argon of purity 99.99%, operating air pressure 1-1.5Pa, sputtering power 150-200W, sedimentation time is 10-25min；
Copper-plated graphite alkene ball is clayed into power: ball grinder elder generation evacuation is passed through argon shield, rotating speed 150-200r/min, ball milling 15-20 minute again, stops 5 minutes, alternate rotation clockwise, counterclockwise, amount to mixed powder time 3-6h, obtain copper-plated graphite alkene powder；
(2) alloy electric contact material is prepared
After the tungsten-carbide powder of above-mentioned weight, nikel powder, lanthanum powder and tungsten-carbide powder are mixed, after being processed by 2-4 molding crushing hot, dry powder be pressed into material, molding blank porosity at 25%-40%, can according to the ultimate constituent in the range of adjust porosity；
To compressing blank pretreatment in high temperature sintering furnace, pretreatment temperature is 850 DEG C-1000 DEG C, 20 minutes-80 minutes time, and hydrogen atmosphere is protected；
Soaking the blank after preheating and burn, sintering temperature is 1100 DEG C-1200 DEG C and carries out leaching burning, 2-3 hour time, obtains alloy electric contact material.
Alloy electric contact material prepared by the present invention, materials microstructure uniformity is improved by optimized choice then raw material ratio and technique, improve the electrical property of material, copper-plated graphite alkene improves Graphene and intermetallic interface wet ability, be conducive to obtaining good interface to combine, make conductivity of composite material, heat conductivility, anti electric arc corrosion improve further, preferably meet the performance requirement of electrical contact.
Detailed description of the invention
Embodiment one
The preparation method of the alloy electric contact material of the present embodiment, alloy electric contact material includes tungsten carbide, nickel and copper-plated graphite alkene, wherein the content of tungsten carbide is 55wt%, the constituent content of nickel is 0.2wt%, the content of the element of lanthanum is 0.5wt%, copper-plated graphite alkene 3.5wt% and inevitably impurity, surplus element is copper.
Direct current magnetron sputtering process is used to make copper-plated graphite alkene at graphenic surface deposition argent, first polish with fine sandpaper before the copper target that purity is 99.99% is installed, remove surface film oxide, clean with acetone again, dry, 10 minutes pre-sputterings are carried out before Deposited By Dc Magnetron Sputtering, baffle plate is used to be separated with Graphene by target, remove metal-oxide and other impurity of target material surface, ensure the purity of follow-up graphenic surface deposition copper film, the technological parameter of magnetically controlled DC sputtering is: target be purity be the copper target of 99.99%, reach 0.1 × 10 in vacuum-3During Pa, being passed through the argon of purity 99.99%, operating air pressure 1Pa, sputtering power 150W, sedimentation time is 10min.
Copper-plated graphite alkene ball is clayed into power: ball grinder elder generation evacuation is passed through argon shield, rotating speed 150r/min, ball milling 15 minutes again, stops 5 minutes, alternate rotation clockwise, counterclockwise, amount to mixed powder time 3h, obtain copper-plated graphite alkene powder.
After the tungsten-carbide powder of above-mentioned weight, nikel powder, lanthanum powder and tungsten-carbide powder being mixed, after being processed by 2 molding crushing hots, the powder of drying is pressed into material, molding blank porosity 25%, can according to the ultimate constituent in the range of adjust porosity.
To compressing blank pretreatment in high temperature sintering furnace, pretreatment temperature is 850 DEG C, 20 minutes time, and hydrogen atmosphere is protected.
Soaking the blank after preheating and burn, sintering temperature is 1100 DEG C and carries out leaching burning, time 2 h, obtains alloy electric contact material.
Embodiment two
The preparation method of the alloy electric contact material of the present embodiment, alloy electric contact material includes tungsten carbide, nickel and copper-plated graphite alkene, wherein the content of tungsten carbide is 70wt%, the constituent content of nickel is 0.5wt%, the content of the element of lanthanum is 1wt%, copper-plated graphite alkene 4.5wt% and inevitably impurity, surplus element is copper.
Direct current magnetron sputtering process is used to make copper-plated graphite alkene at graphenic surface deposition argent, first polish with fine sandpaper before the copper target that purity is 99.99% is installed, remove surface film oxide, clean with acetone again, dry, 10 minutes pre-sputterings are carried out before Deposited By Dc Magnetron Sputtering, baffle plate is used to be separated with Graphene by target, remove metal-oxide and other impurity of target material surface, ensure the purity of follow-up graphenic surface deposition copper film, the technological parameter of magnetically controlled DC sputtering is: target be purity be the copper target of 99.99%, reach 1.0 × 10 in vacuum-3During Pa, being passed through the argon of purity 99.99%, operating air pressure 1.5Pa, sputtering power 200W, sedimentation time is 25min.
Copper-plated graphite alkene ball is clayed into power: ball grinder elder generation evacuation is passed through argon shield, rotating speed 200r/min, ball milling 20 minutes again, stops 5 minutes, alternate rotation clockwise, counterclockwise, amount to mixed powder time 6h, obtain copper-plated graphite alkene powder.
After the tungsten-carbide powder of above-mentioned weight, nikel powder, lanthanum powder and tungsten-carbide powder being mixed, after being processed by 4 molding crushing hots, the powder of drying is pressed into material, molding blank porosity 40%, can according to the ultimate constituent in the range of adjust porosity.
To compressing blank pretreatment in high temperature sintering furnace, pretreatment temperature is 1000 DEG C, 80 minutes time, and hydrogen atmosphere is protected.
Soaking the blank after preheating and burn, sintering temperature is 1200 DEG C and carries out leaching burning, 3 hours time, obtains alloy electric contact material.
Comparative example
By constituent element quality proportioning: cadmium: 6%；Zirconium: 3%；Cerium: 0.03%；Surplus copper.Melting ingot casting forms copper cadmium zirconium cerium alloy ingot.Copper cadmium zirconium cerium alloy ingot is heated through being squeezed into wire rod, then through pulling to the silk material of a diameter of φ 4.Silk material is cut into the suitable segment upsetting system of length with filamentary silver through cold headers by cold headers and is combined into the sheet material contact product of φ 9 × 2.By contact product diffusion annealing 150 minutes in 560 DEG C of vacuum states pour the electric furnace of argon, it is cooled to 80 DEG C with stove and takes out product.Product is loaded in the electric furnace that logical oxygen pressure is 1.2 Mpa and be 650 DEG C of oxidation processes 32 hours temperature head Xian, then be warming up to 730 DEG C of oxidation processes 30 hours with stove.Cool to less than the 100 DEG C electric contact materials come out of the stove with the furnace
Testing the electric contact material of same shape and embodiment 1-2 of size and comparative example, test result shows: the resistivity of embodiment 1-2 relatively example reduces by more than 21%, and hardness increases by more than 35%.
Claims (1)
1. the preparation method of an alloy electric contact material, alloy electric contact material includes tungsten carbide, nickel and copper-plated graphite alkene, wherein the content of tungsten carbide is 55-70wt%, the constituent content of nickel is 0.2-0.5wt%, the content of the element of lanthanum is 0.5-1wt%, copper-plated graphite alkene 3.5-4.5wt% and inevitably impurity, surplus element is copper；
The method comprises the steps:
(1) copper-plated graphite alkene powder is prepared
Direct current magnetron sputtering process is used to make copper-plated graphite alkene at graphenic surface deposition argent, first polish with fine sandpaper before the copper target that purity is 99.99% is installed, remove surface film oxide, clean with acetone again, dry, 10 minutes pre-sputterings are carried out before Deposited By Dc Magnetron Sputtering, baffle plate is used to be separated with Graphene by target, remove metal-oxide and other impurity of target material surface, ensure the purity of follow-up graphenic surface deposition copper film, the technological parameter of magnetically controlled DC sputtering is: target be purity be the copper target of 99.99%, reach 0.1 × 10 in vacuum-3-1.0×10-3During Pa, being passed through the argon of purity 99.99%, operating air pressure 1-1.5Pa, sputtering power 150-200W, sedimentation time is 10-25min；
Copper-plated graphite alkene ball is clayed into power: ball grinder elder generation evacuation is passed through argon shield, rotating speed 150-200r/min, ball milling 15-20 minute again, stops 5 minutes, alternate rotation clockwise, counterclockwise, amount to mixed powder time 3-6h, obtain copper-plated graphite alkene powder；
(2) alloy electric contact material is prepared
After the tungsten-carbide powder of above-mentioned weight, nikel powder, lanthanum powder and tungsten-carbide powder are mixed, after being processed by 2-4 molding crushing hot, dry powder be pressed into material, molding blank porosity at 25%-40%, can according to the ultimate constituent in the range of adjust porosity；
To compressing blank pretreatment in high temperature sintering furnace, pretreatment temperature is 850 DEG C-1000 DEG C, 20 minutes-80 minutes time, and hydrogen atmosphere is protected；
Soaking the blank after preheating and burn, sintering temperature is 1100 DEG C-1200 DEG C and carries out leaching burning, 2-3 hour time, obtains alloy electric contact material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610234784.3A CN105861864A (en) | 2016-04-16 | 2016-04-16 | Preparation method of alloy electrical contact material |
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| CN201610234784.3A CN105861864A (en) | 2016-04-16 | 2016-04-16 | Preparation method of alloy electrical contact material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106636726A (en) * | 2017-01-12 | 2017-05-10 | 苏州思创源博电子科技有限公司 | Composite copper conducting material manufacturing method |
| CN110291606A (en) * | 2017-02-22 | 2019-09-27 | 三菱电机株式会社 | Contactor material, its manufacturing method and vacuum valve |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338527A (en) * | 2000-08-21 | 2002-03-06 | 乐清市福达电工合金材料有限公司 | Copper-tungsten carbide contact material |
| CN105405685A (en) * | 2015-12-10 | 2016-03-16 | 宋和明 | Disconnecting switch contact material and processing technology therefor |
| CN105463238A (en) * | 2015-12-24 | 2016-04-06 | 济南大学 | Cu-Cr electrical contact material and preparation method thereof |
-
2016
- 2016-04-16 CN CN201610234784.3A patent/CN105861864A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338527A (en) * | 2000-08-21 | 2002-03-06 | 乐清市福达电工合金材料有限公司 | Copper-tungsten carbide contact material |
| CN105405685A (en) * | 2015-12-10 | 2016-03-16 | 宋和明 | Disconnecting switch contact material and processing technology therefor |
| CN105463238A (en) * | 2015-12-24 | 2016-04-06 | 济南大学 | Cu-Cr electrical contact material and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106636726A (en) * | 2017-01-12 | 2017-05-10 | 苏州思创源博电子科技有限公司 | Composite copper conducting material manufacturing method |
| CN110291606A (en) * | 2017-02-22 | 2019-09-27 | 三菱电机株式会社 | Contactor material, its manufacturing method and vacuum valve |
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Application publication date: 20160817 |
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