CN112432926B - 同时捕捉来自多个目标的重叠信号 - Google Patents

同时捕捉来自多个目标的重叠信号

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Publication number
CN112432926B
CN112432926B CN202011221908.7A CN202011221908A CN112432926B CN 112432926 B CN112432926 B CN 112432926B CN 202011221908 A CN202011221908 A CN 202011221908A CN 112432926 B CN112432926 B CN 112432926B
Authority
CN
China
Prior art keywords
illumination
pupil plane
pupil
metrology
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011221908.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN112432926A (zh
Inventor
安迪（安德鲁）·希尔
阿姆农·玛纳森
尤里·帕斯卡维尔
尤瓦尔·卢巴舍夫斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN112432926A publication Critical patent/CN112432926A/zh
Application granted granted Critical
Publication of CN112432926B publication Critical patent/CN112432926B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN202011221908.7A 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号 Active CN112432926B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/222,503 2016-07-28
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets
PCT/US2017/044528 WO2018023078A1 (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets
CN201780046742.XA CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780046742.XA Division CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Publications (2)

Publication Number Publication Date
CN112432926A CN112432926A (zh) 2021-03-02
CN112432926B true CN112432926B (zh) 2025-10-10

Family

ID=61009490

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011221908.7A Active CN112432926B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号
CN201780046742.XA Active CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Family Applications After (1)

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Country Status (7)

Country Link
US (2) US10048132B2 (cg-RX-API-DMAC10.html)
JP (1) JP6771647B2 (cg-RX-API-DMAC10.html)
KR (1) KR102180433B1 (cg-RX-API-DMAC10.html)
CN (2) CN112432926B (cg-RX-API-DMAC10.html)
SG (2) SG10201912512UA (cg-RX-API-DMAC10.html)
TW (1) TWI728157B (cg-RX-API-DMAC10.html)
WO (1) WO2018023078A1 (cg-RX-API-DMAC10.html)

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WO2020046408A1 (en) * 2018-08-28 2020-03-05 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
US11360399B2 (en) 2018-09-19 2022-06-14 Asml Netherlands B.V. Metrology sensor for position metrology
KR102873433B1 (ko) * 2018-11-21 2025-10-17 케이엘에이 코포레이션 단일 셀 그레이 산란계측 오버레이 타겟 및 다양한 조명 파라미터를 사용한 이들의 측정
US11073768B2 (en) 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
JP7365510B2 (ja) * 2020-01-29 2023-10-19 エーエスエムエル ネザーランズ ビー．ブイ． 基板上の周期構造を測定するための計測方法およびデバイス
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
KR20230052878A (ko) 2020-08-17 2023-04-20 도쿄엘렉트론가부시키가이샤 가변 파장 투시 층 적층물
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
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US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
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JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
CN119317878A (zh) * 2022-07-19 2025-01-14 Asml荷兰有限公司 用于光刻系统的增强对准设备
WO2024033035A1 (en) * 2022-08-10 2024-02-15 Asml Netherlands B.V. Metrology method and associated metrology device
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

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US5734498A (en) * 1994-05-09 1998-03-31 The Regents Of The University Of California Illuminator elements for conventional light microscopes
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Also Published As

Publication number Publication date
JP2019526053A (ja) 2019-09-12
JP6771647B2 (ja) 2020-10-21
SG11201900509YA (en) 2019-02-27
SG10201912512UA (en) 2020-02-27
US10401228B2 (en) 2019-09-03
KR20190026039A (ko) 2019-03-12
CN109564160B (zh) 2020-11-10
TWI728157B (zh) 2021-05-21
US20180335346A1 (en) 2018-11-22
US20180031424A1 (en) 2018-02-01
US10048132B2 (en) 2018-08-14
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
CN112432926A (zh) 2021-03-02
CN109564160A (zh) 2019-04-02
KR102180433B1 (ko) 2020-11-19

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