CN112420769B - Method for preparing organic color image sensor and color image sensor - Google Patents
Method for preparing organic color image sensor and color image sensor Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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Abstract
The invention belongs to the technical field of image sensors, and particularly relates to a preparation method of an organic color image sensor and a color image sensor, which comprise the steps of providing a silicon-based backboard with a readout circuit for S1, preparing a pixel anode on the S2 silicon-based backboard, preparing a pixel definition layer for S3, preparing a full-band organic photoelectric detector for S4, packaging an S5 film, preparing an optical component for S6, attaching an S7 glass cover plate, performing S8 module engineering and the like. The invention provides a principle device structure of an organic color image sensor and a preparation method thereof.
Description
Technical Field
The invention belongs to the technical field of image sensors, and particularly relates to a preparation method of an organic color image sensor and the color image sensor.
Background
In the current society, along with the development of science and technology, the electronic information subject continuously breaks through, and the related fields are driven to develop rapidly from the high-end science field to the daily life of common people. Among them, the research of image sensors has led visual imaging to enter a new era. The image sensor is widely applied to the fields of digital cameras, equipment manufacturing, photographic imaging, medical biology, agriculture and rural areas and the like, and the rapid increase of the demand is necessarily brought. Photon detectors have a higher detection rate than thermal detectors, except for the earliest photomultiplier, and photodetectors based on semiconductors such as silicon, germanium, and III-V compounds have now developed quite well. In recent years, development and integration of photodetectors are widely applied to photoelectric devices such as Charge Coupled Devices (CCDs) and complementary metal oxide semiconductor Chips (CMOS), which are common photosensitive elements in the field of digital images. Compared with inorganic photodetectors, organic photodetectors have the advantages of low cost, easy preparation into flexible devices, and the like, and are receiving more attention.
The invention aims to provide a preparation method of an organic color image sensor and the color image sensor.
Disclosure of Invention
In order to achieve the above purpose, the present invention provides the following technical solutions:
a method of fabricating an organic color image sensor, comprising the steps of:
s1, providing a silicon-based backboard, wherein an image sensor reading circuit is manufactured on the silicon-based backboard, the reading circuit is used for reading photoelectric conversion signals and providing the photoelectric conversion signals for a display device, the three groups of reading circuits respectively correspond to an R pixel area, a G pixel area and a B pixel area, the uppermost layer of the silicon-based backboard is tungsten holes, the tungsten holes are regularly arranged according to pixel patterns corresponding to the pixel areas, conductive connecting channels of the pixel areas and the reading circuit are formed, and the tungsten holes are 10-20nm higher than the silicon-based backboard;
s2, preparing a pixel anode on a silicon-based backboard, and patterning the pixel anode, wherein the light reflectivity of the pixel anode is more than 80%;
s3, preparing a pixel definition layer on the pixel anode layer, and patterning the pixel definition layer, wherein the pixel definition layer is made of an insulating material and can be one of inorganic SiN, siO, siNO or PI;
s4, sending the silicon-based backboard subjected to the step S3 into an organic vacuum coating machine, and sequentially depositing all functional layers of an organic photoelectric detector through an openmask, wherein the organic photoelectric detector is a full-band response organic photoelectric detector, and the response range of the organic photoelectric detector at least covers 380-760nm;
s5, carrying out film packaging on the backboard in the step S4;
s6, preparing an optical component on the backboard in the step S5, wherein the optical component comprises an optical path collimation structure, an optical filter is arranged on the optical path collimation structure, the optical filter comprises an R pixel area, a G pixel area and a B pixel area, the optical filter corresponds to the R pixel area, the G pixel area and the B pixel area in the step S1 one by one respectively, the optical filter in the R pixel area filters incident light of G wave band and incident light of B wave band, and the optical filter in the G pixel area filters incident light of R wave band and B wave band; b pixel area filter filters R and G wave band incident light; the optical path collimating structure comprises a micro lens array, the optical assembly further comprises a transparent optical adhesive layer arranged between the optical filter and the optical path collimating structure, the transparent optical adhesive layer is used for bonding the optical filter and the optical path collimating structure, and the optical path collimating structure is used for carrying out optical collimation on R, G and B light;
s7, after the step S6 is completed, attaching a glass cover plate on the optical filter, wherein the optical filter and the glass cover plate are connected by adopting a transparent optical adhesive layer;
s8, cutting and binding module engineering are carried out after the step S7 is completed, and the preparation of the image sensor is completed.
Further, the preparation of the pixel anode in the step S2 includes the steps of:
t1, carrying out metal electrode layer coating on a silicon-based backboard, wherein the coating is to sequentially manufacture four layers of Ti/Al// TiN/ITO on a metal electrode;
t2, coating photoresist, and coating photoresist on the metal electrode layer;
t3, exposing, namely exposing the substrate coated with the photoresist in the T2 on an exposure machine;
t4, developing, namely rotationally spraying a developing solution on the exposed substrate in the T3 at a low rotating speed, washing with pure water, and spin-drying at a high rotating speed;
t5, etching to remove the metal electrode layer without the photoresist covering part;
t6, cleaning, namely firstly soaking the etched semi-finished product in the T5 by adopting NMP liquid, then soaking and cleaning by using deionized water, and then spin-drying at a high speed and then drying;
and T7, vacuum annealing, namely placing the semi-finished product cleaned and dried in the step T6 on a vacuum hot plate to obtain the silicon-based backboard with the fine pixel electrode.
Preferably, the pixel defining layer in step S3 may be further formed using a black matrix, which is a black photosensitive resin composition.
Further, the organic photodetector in step S4 is operated in a light top incidence mode, and the functional layers include one or more organic modification layers, one or more organic photosensitive layers, and a semitransparent cathode layer.
Further, the thin film package in step S5 includes one or more CVD layers, ALD layers, or IJP layers of the laminated structure.
Preferably, the optical component in the step S6 may also be fabricated on a glass substrate, and after the preparation, the optical component is bonded to the silicon-based back plate in the step S5 by using the method of the step S7, and the bonding is performed by using transparent optical cement.
Furthermore, the silicon-based backboard can be thinned, and the glass cover plate is replaced by a resin film, so that the flexible image sensor is prepared.
The invention also comprises an organic image sensor prepared by the method.
The technical effects of the invention at least comprise the following aspects: (1) A principle device structure of an organic color image sensor and a method of manufacturing the same are provided; (2) The colorization is realized by the mode of an RGB read-out circuit, a full-band organic photoelectric detector and an RGB color filter, the RGB color filter can be prepared by a yellow light process, the precision is high, the extremely high alignment requirement of the organic photoelectric detector to evaporation equipment by respectively preparing R, G, B detectors is avoided, and the sensor adopting the scheme is easy to realize high pixel density; (3) The tungsten holes are arranged to be 10-20nm higher than the silicon-based backboard, so that good electrical connection between the pixel anode and the readout circuit is ensured; (4) The image sensor adopts the light path collimation structure and the pixel definition layer, so that the mutual crosstalk phenomenon of R, G and B incident light is avoided; (5) The Ti/Al// TiN/ITO anode with a four-layer structure ensures high reflectivity and high charge collection efficiency, and can improve the detection rate of the detector; (6) The scheme of the invention is completely compatible with the current silicon-based OLED display manufacturing production line, and reduces the equipment investment cost; (7) the solution of the invention is easy to manufacture into fully flexible devices.
Drawings
FIG. 1 is a schematic diagram of a color image sensor manufacturing process according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present invention provides a technical solution:
a method of manufacturing an organic color image sensor, comprising the steps of:
s1, providing a silicon-based backboard, wherein an image sensor reading circuit is manufactured on the silicon-based backboard, the reading circuit is used for reading photoelectric conversion signals and providing the photoelectric conversion signals for a display device, the three groups of reading circuits respectively correspond to an R pixel area, a G pixel area and a B pixel area, the uppermost layer of the silicon-based backboard is tungsten holes, the tungsten holes are regularly arranged according to pixel patterns corresponding to the pixel areas, conductive connecting channels of the pixel areas and the reading circuit are formed, and the tungsten holes are 10-20nm higher than the silicon-based backboard;
s2, preparing a pixel anode on a silicon-based backboard, and patterning the pixel anode, wherein the light reflectivity of the pixel anode is more than 80%;
s3, preparing a pixel definition layer on the pixel anode layer, and patterning the pixel definition layer, wherein the pixel definition layer is made of an insulating material and can be one of inorganic SiN, siO, siNO or PI;
s4, sending the silicon-based backboard subjected to the step S3 into an organic vacuum coating machine, and sequentially depositing all functional layers of an organic photoelectric detector through an openmask, wherein the organic photoelectric detector is a full-band response organic photoelectric detector, and the response range of the organic photoelectric detector at least covers 380-760nm;
s5, carrying out film packaging on the backboard in the step S4;
s6, preparing an optical component on the backboard in the step S5, wherein the optical component comprises an optical path collimation structure, an optical filter is arranged on the optical path collimation structure, the optical filter comprises an R pixel area, a G pixel area and a B pixel area, the optical filter corresponds to the R pixel area, the G pixel area and the B pixel area in the step S1 one by one respectively, the optical filter in the R pixel area filters incident light of G wave band and incident light of B wave band, and the optical filter in the G pixel area filters incident light of R wave band and B wave band; b pixel area filter filters R and G wave band incident light; the optical path collimating structure comprises a micro lens array, the optical assembly further comprises a transparent optical adhesive layer arranged between the optical filter and the optical path collimating structure, the transparent optical adhesive layer is used for bonding the optical filter and the optical path collimating structure, and the optical path collimating structure is used for carrying out optical collimation on R, G and B light;
s7, after the step S6 is completed, attaching a glass cover plate on the optical filter, wherein the optical filter and the glass cover plate are connected by adopting a transparent optical adhesive layer;
s8, cutting and binding module engineering are carried out after the step S7 is completed, and the preparation of the image sensor is completed.
Further, the preparation of the pixel anode in the step S2 includes the steps of:
t1, carrying out metal electrode layer coating on a silicon-based backboard, wherein the coating is to sequentially manufacture four layers of Ti/Al// TiN/ITO on a metal electrode;
t2, coating photoresist, and coating photoresist on the metal electrode layer;
t3, exposing, namely exposing the substrate coated with the photoresist in the T2 on an exposure machine;
t4, developing, namely rotationally spraying a developing solution on the exposed substrate in the T3 at a low rotating speed, washing with pure water, and spin-drying at a high rotating speed;
t5, etching to remove the metal electrode layer without the photoresist covering part;
t6, cleaning, namely firstly soaking the etched semi-finished product in the T5 by adopting NMP liquid, then soaking and cleaning by using deionized water, and then spin-drying at a high speed and then drying;
and T7, vacuum annealing, namely placing the semi-finished product cleaned and dried in the step T6 on a vacuum hot plate to obtain the silicon-based backboard with the fine pixel electrode.
Further, the organic photodetector in the step S4 is in a light top incidence working mode, and the functional layers thereof include one or more organic modification layers, one or more organic photosensitive layers and a semitransparent cathode layer.
Further, the thin film package in the step S5 includes one or more CVD layers, ALD layers, or IJP layers of the laminated structure.
Furthermore, the optical component in the step S6 may also be fabricated on a glass substrate, and after the preparation is completed, the optical component is bonded to the silicon-based back plate in the step S5 by adopting the mode of the step S7, and the bonding is performed by adopting transparent optical cement.
In another embodiment, the silicon-based back plate can be thinned, and the glass cover plate is replaced by a resin film to prepare the flexible image sensor.
In another embodiment, the pixel defining layer in the step S3 may be further formed using a black matrix, and the black matrix is a black photosensitive resin composition.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A method of manufacturing an organic color image sensor, comprising the steps of:
s1, providing a silicon-based backboard, wherein an image sensor reading circuit is manufactured on the silicon-based backboard, the reading circuit is used for reading photoelectric conversion signals and providing the photoelectric conversion signals for a display device, the three groups of the reading circuits respectively correspond to an R pixel area, a G pixel area and a B pixel area, the uppermost layer of the silicon-based backboard is tungsten holes, the tungsten holes are regularly arranged according to pixel patterns corresponding to the pixel areas, conductive connecting channels of the pixel areas and the reading circuit are formed, and the tungsten holes are 10-20nm higher than the silicon-based backboard;
s2, preparing a pixel anode on a silicon-based backboard, and patterning the pixel anode, wherein the light reflectivity of the pixel anode is more than 80%; the preparation of the pixel anode comprises the following steps:
t1, coating a metal electrode layer on a silicon-based backboard, wherein the coating is to sequentially manufacture four layers of Ti/Al/TiN/ITO on the metal electrode;
t2, coating photoresist, and coating photoresist on the metal electrode layer;
t3, exposing, namely exposing the substrate coated with the photoresist in the T2 on an exposure machine;
t4, developing, namely rotationally spraying a developing solution on the exposed substrate in the T3 at a low rotating speed, washing with pure water, and spin-drying at a high rotating speed;
t5, etching to remove the metal electrode layer without the photoresist covering part;
t6, cleaning, namely firstly soaking the etched semi-finished product in the T5 by adopting NMP liquid, then soaking and cleaning by using deionized water, and then spin-drying at a high speed and then drying;
t7, vacuum annealing, namely placing the semi-finished product cleaned and dried in the T6 on a vacuum hot plate to obtain the silicon-based backboard with the fine pixel electrode;
s3, preparing a pixel definition layer on the pixel anode layer, and patterning the pixel definition layer, wherein the pixel definition layer is made of an insulating material;
s4, sending the silicon-based backboard subjected to the step S3 into an organic vacuum coating machine, and sequentially depositing all functional layers of an organic photoelectric detector through an open mask, wherein the organic photoelectric detector is a full-band response organic photoelectric detector, and the response range of the organic photoelectric detector at least covers 380-760nm;
s5, carrying out film packaging on the backboard in the step S4;
s6, preparing an optical component on the backboard in the step S5, wherein the optical component comprises an optical path collimation structure, an optical filter is arranged on the optical path collimation structure, the optical filter comprises an R pixel area, a G pixel area and a B pixel area, the optical filter corresponds to the R pixel area, the G pixel area and the B pixel area in the step S1 one by one respectively, the optical filter in the R pixel area filters incident light of G wave band and incident light of B wave band, and the optical filter in the G pixel area filters incident light of R wave band and B wave band; b pixel area filter filters R and G wave band incident light; the optical path collimating structure comprises a micro lens array, the optical assembly further comprises a transparent optical adhesive layer arranged between the optical filter and the optical path collimating structure, the transparent optical adhesive layer is used for bonding the optical filter and the optical path collimating structure, and the optical path collimating structure is used for carrying out optical collimation on R, G and B light;
s7, after the step S6 is completed, attaching a glass cover plate on the optical filter, wherein the optical filter and the glass cover plate are connected by adopting a transparent optical adhesive layer;
s8, cutting and binding module engineering are carried out after the step S7 is completed, and the preparation of the image sensor is completed.
2. The method of manufacturing an organic color image sensor according to claim 1, wherein: the pixel defining layer in the step S3 may be further formed using a black matrix, and the black matrix is a black photosensitive resin composition.
3. The method of manufacturing an organic color image sensor according to claim 1, wherein: the organic photodetector in the step S4 is in a light top incidence working mode, and the functional layers include one or more organic modification layers, one or more organic photosensitive layers and a semitransparent cathode layer.
4. The method of manufacturing an organic color image sensor according to claim 1, wherein: the thin film package in step S5 includes one or more CVD, ALD, or IJP layers of the stacked structure.
5. The method of manufacturing an organic color image sensor according to claim 1, wherein: the optical component in the step S6 can also be manufactured on a glass substrate, and is bonded with the silicon-based backboard in the step S5 in a mode of the step S7 after the preparation is finished, and the bonding is performed by adopting transparent optical cement.
6. The method of manufacturing an organic color image sensor according to claim 1, wherein: the silicon-based backboard can be thinned, and the glass cover plate is replaced by a resin film, so that the flexible image sensor is manufactured.
7. An organic color image sensor, characterized by: prepared by the method of any one of claims 1-6.
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